Academic literature on the topic 'Transparent conductive oxides (TCO)'

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Journal articles on the topic "Transparent conductive oxides (TCO)"

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Minami, Tadatsugu. "New n-Type Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (August 2000): 38–44. http://dx.doi.org/10.1557/mrs2000.149.

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Most research to develop highly transparent and conductive thin films has focused on n-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2 and In2O3 were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2 (Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4 were developed prior to 1980, but their TCO films have not yet been used widely.
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Wu, Xiao Li, Yu Zhen Yuan, Han Fa Liu, and Yun Yan Liu. "Up-Conversion Mechanisms and Application of Rare Earth-Doped ZnO." Applied Mechanics and Materials 312 (February 2013): 373–76. http://dx.doi.org/10.4028/www.scientific.net/amm.312.373.

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Zinc oxide (ZnO) the film is a new type of transparent conductive oxides (TCO) material; it has a green environmental application prospect and hopeful to be substitution of indium tin oxide, so it has been the research focus of TCO materials. The rare earth ion like Yb3+, and Ho3+, Er3+shall be applied to satisfy the up-conversion function, and rare earth elements doped ZnO transparent conductive films will prepared. The play is to study the mechanism of up-conversion and energy transitions that the rare earth ions in the ZnO transparent conductive film. Through the theoretical analysis with the performance of the zinc oxide thin films explore optimization scheme, and aim to prepare out doped-ZnO and transparent conductive film that have both excellent photoelectric performance and up-conversion function. This new type of ZnO transparent conductive film with up-conversion function, it will have important theoretical significance in production of green environment materials and good application prospect in the field of sole cells, photoelectric detection luminescent device and so on.
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Choi, Kiwoon, Jaehoon Jung, Jongyoung Kim, Joonho Lee, Han Sup Lee, and Il-Suk Kang. "Antireflective Transparent Conductive Oxide Film Based on a Tapered Porous Nanostructure." Micromachines 11, no. 2 (February 17, 2020): 206. http://dx.doi.org/10.3390/mi11020206.

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A new architecture for antireflection (AR) has been developed to break the trade-off between the optical transmittance and the electrical conduction impeding the performance of transparent conductive oxide (TCO) films. The tapered porous nanostructure with a complex continuous refractive index effectively eliminates reflections from the interfaces between air and the TCO and TCO and the substrate. Compared to the conventional TCO film, the AR TCO film exhibited the same electrical conduction, with an average transmittance of 88.7% in the 400–800 nm range, a 10.3% increase. The new AR TCO film is expected to improve the performance of various optoelectronic devices.
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Afre, Rakesh A., Nallin Sharma, Maheshwar Sharon, and Madhuri Sharon. "Transparent Conducting Oxide Films for Various Applications: A Review." REVIEWS ON ADVANCED MATERIALS SCIENCE 53, no. 1 (January 1, 2018): 79–89. http://dx.doi.org/10.1515/rams-2018-0006.

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Abstract This review encompasses properties and applications of polycrystalline or amorphous, Transparent Conducting Oxides (TCO) semiconductors. Coexistence of electrical conductivity and optical transparency in TCO depends on the nature, number and atomic arrangements of metal cations in oxides, on the resident morphology and presence of intrinsic or introduced defects. Therefore, TCO semiconductors that are impurity-doped as well as the ternary compounds and multi-component oxides consisting of combinations are discussed. Expanding use of TCO is endangered by scarcity, cost of In, fragility of glass, limited transparency to visible light, instability above >200 °C, non-flexible for application of flexible solar cell; thus driving search for alternatives such as graphene or CNT, that are more stable under acidic, alkaline, oxidizing, reducing and elevated temperature. There are reasons to conclude that there is need to develop large area deposition techniques to produce TCO films with high deposition rate. TCOs are mostly n-type semiconductors, but p-type are also being researched
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Huang, Jin Hua, Rui Qin Tan, Jia Li, Yu Long Zhang, Ye Yang, and Wei Jie Song. "Thermal Stability of Aluminum Doped Zinc Oxide Thin Films." Materials Science Forum 685 (June 2011): 147–51. http://dx.doi.org/10.4028/www.scientific.net/msf.685.147.

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Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.
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Mohd Ali, N. I., N. Misran, M. F. Mansor, and M. F. Jamlos. "Transparent solar antenna of 28 GHz using transparent conductive oxides (TCO) thin film." Journal of Physics: Conference Series 852 (May 2017): 012036. http://dx.doi.org/10.1088/1742-6596/852/1/012036.

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Fortunato, Elvira, David Ginley, Hideo Hosono, and David C. Paine. "Transparent Conducting Oxides for Photovoltaics." MRS Bulletin 32, no. 3 (March 2007): 242–47. http://dx.doi.org/10.1557/mrs2007.29.

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AbstractTransparent conducting oxides (TCOs) are an increasingly important component of photovoltaic (PV) devices, where they act as electrode elements, structural templates, and diffusion barriers, and their work function controls the open-circuit device voltage. They are employed in applications that range from crystalline-Si heterojunction with intrinsic thin layer (HIT) cells to organic PV polymer solar cells. The desirable characteristics of TCO materials that are common to all PV technologies are similar to the requirements for TCOs for flat-panel display applications and include high optical transmissivity across a wide spectrum and low resistivity. Additionally, TCOs for terrestrial PV applications must use low-cost materials, and some may require device-technology-specific properties. We review the fundamentals of TCOs and the matrix of TCO properties and processing as they apply to current and future PV technologies.
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Brewer, L. N., and Vinayak P. Dravid. "Better Transparency and Conduction Via Alchemi: Site-Occupancy of Cations in Transparent Conducting Oxides (TCOs) Cd1+xIn2-2xsnxO4." Microscopy and Microanalysis 7, S2 (August 2001): 336–37. http://dx.doi.org/10.1017/s1431927600027756.

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Transparent conductive oxide materials (TCO) are currently under development for use as electrodes in devices such as photovoltaics and flat panel displays. As electrode area increases in large-area applications (e.g. photovoltaics), the resistivity of the TCO must decrease in order to maintain efficiency. The ideal next generation TCO will be a low cost material with a substantially higher conductivity than ITO obtained by improving mobility. Two promising TCO's are CdIn2O2 and Cd2SnO4 which both exhibit high conductivities (4300 S/cm and 8300 S/cm, respectively) and high mobilities (44 and 60 cm2/Vs, respectively).A bulk investigation of the system CdIn2O4 - Cd2SnO4 reveals a large spinel solid solution, Cd1+xIn2.2xSnxO4 (0<x<0.75) at 1175°C exhibiting a sharp decrease in measured optical gap (from 3.0 to 2.8 eV) at x=0.2 and an increase in conductivity (from 2200 S/cm to 3500 S/cm) for reduced specimens between x=0.4 and x=0.60) with increasing x. It is suspected that the cation distribution (e.g. normal, random, or inverse) on the spinel lattice may be important in understanding these shifts in electrical and optical properties.
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Brewer, L. N., D. R. Kammler, T. O. Mason, and V. P. Dravid. "Combined CBED/Alchemi Analysis of Crystallography and Cation Distributions in the Transparent Conductive Oxide Cd1+XIn2-2XSnxO4." Microscopy and Microanalysis 6, S2 (August 2000): 396–97. http://dx.doi.org/10.1017/s1431927600034474.

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Transparent conductive oxide materials (TCO) are currently under development for use as electrodes in optical systems such as photovoltaics and flat panel displays. Indium-tin based oxides and cadmium-tin based oxides have been investigated in the past but have received more attention recently due to their high electron mobilities. The mechanisms for conduction in these systems are not fully understood, but the distribution of cations within the lattice is thought to be of importance. We are currently studying the Cd1+xIn2-2xSnxO4 system for use as a TCO material. In particular, we are interested in the effect of the crystallography and cation distributions in this material upon its electro-optical properties.The investigation of cation distributions in this spinel system presents special challenges to purely diffraction based methods. X-ray diffraction cannot be used to assess the cation distribution for this system due to the similar x-ray atomic scattering factors for the cations involved.
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Niu, Yuchao, Xiaoyu Ma, Xiangju Liu, Weimin Wang, Yongtai Zhen, and Ying Gao. "Spreadability of Ag Layer on Oxides and High Performance of AZO/Ag/AZO Sandwiched Transparent Conductive Film." Journal of Nanoscience 2017 (July 25, 2017): 1–9. http://dx.doi.org/10.1155/2017/2409062.

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Single layers of indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), and Ag, bilayers of ITO/Ag and AZO/Ag, and sandwiched layers of ITO/Ag/ITO (IAI) and AZO/Ag/AZO (ZAZ) were fabricated on ordinary glass substrates using magnetron sputtering. The surface morphologies of single layers and bilayers were measured. The sheet resistance and transmittance of the sandwiched layers were investigated. The results showed that the spreadability of the Ag on the AZO was significantly better than that on the ITO or bare glass substrate. The spreadability of Ag on underlayers influences obviously the performance of transparent conductive oxide/Ag/transparent conductive oxides (TCO/Ag/TCO or TAT). The sheet resistance and transmittance of the ZAZ sandwiched layer with the matching of 35 nm AZO (35 nm)/Ag (9 nm)/AZO (35 nm) fabricated in this paper were low to 3.84 Ω/sq and up to 85.55% at 550 nm, respectively. Its maximum Haacke figure of merit was 0.05469 Ω−1, higher than that of IAI multilayer.
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Dissertations / Theses on the topic "Transparent conductive oxides (TCO)"

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Axelsson, Mathias. "Transparent conductive oxides deposited by magnetron sputtering: synthesis and characterization." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-390150.

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The thesis has dealt with transparent conducting oxide (TCO) materials, with a focus on Al:ZnO and with studies on Sn:In2O3 and ZnO. TCOs are a material group that is used for its properties of being conductive and at the same time transparent. In solar cells, a top layer of TCO is often used to allow light to transmit into the cell and then conduct the resulting current.   A set of growth parameters was chosen and optimized through a literature study and experiments. The depositied thin films were characterized by optical and electrical characterization methods. Rf-magnetron-sputtering was used as the deposition method, where the influence of O2, argon and substrate temperature were the parameters to be studied. As a part of the characterization a model for spectroscopic ellipsometry on Al:ZnO was made, enabling faster measurement of transport properties. The main parameter affecting the TCO properties was found to be oxygen flow and the optimum flow value for each material has been determined. Substrate heating did not show any significant improvement on the resistivity of Al:ZnO with a minimum value of ~5.0*10-4 Ωcm while no heating resulted in a value of ~6.0*10-4  Ωcm. These values are comparable to the state-of-the-art from the literature.   As a demonstration of application, the developed AZO and ZnO were applied to CIGS solar cells and these were compared to a reference. The newly developed AZO and ZnO was comparable to the reference but a lower mean fill factor indicates that improvements can be made.
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Zhang, Menglong. "Ordered transparent conductive oxides (TCOs) for applications to photoelectrochemistry." Thesis, University of York, 2016. http://etheses.whiterose.ac.uk/15194/.

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A method for fabricating high quality photonic TCO (transparent conductive oxide) films of macroporous FTO (fluorine doped tin oxide) (mac-FTO) and hollow sphere AZO (aluminum doped zinc oxide) (hs-AZO) is described. The films were used as electrodes to support photoelectrochemical reactions relevant to energy research. Methods have been developed for conformal coating the TCO electrodes with photoactive materials including CdS, Fe2O3 and C3N4. Previous literature describing photonic mac-FTO films generally show poor conductivity and optical properties, which limit the performance of structured TCOs in supporting photoelectrochemistry. Optimizing the synthesis and processing conditions gives high quality optical and conductive films of mac-FTO. Coating films with dispersed nanoparticles of CdS shows that the mac-FTO supports charge carrier transport to the contact and is not just a structural support for continuous conductive films of photoactive materials. Coating to maximise photocurrent gives over 9 mA cm-2 for conformally coated CdS@mac-FTO under visible light (> 420 nm) through a simple approach, showing an improvement in comparison to previous CdS literature work on structured electrodes. The new hs-AZO TCO also supports photocurrents up to 7.8 mA cm-2 after CdS coating. Both FTO and AZO show significant photocurrent enhancement in comparison to planar FTO analogues. In addition to CdS, methods were developed to conformally coat the organic photocatalyst C3N4 and the metal oxide Fe2O3 onto mac-FTO which showed enhanced photocurrent compared to planar analogues. Enhancements were typically in the range x (CdS), y (C3N4), and z (Fe2O3) which reflect the increase in surface area and greater loading of photoactive material. Potential photonic enhancements were not determined, however there is clearly scope for increasing the photocurrent per illuminated surface area using structured TCO electrodes.
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Song, Dengyuan Centre for Photovoltaic Engineering UNSW. "Zinc oxide TCOs (Transparent Conductive Oxides) and polycrystalline silicon thin-films for photovoltaic applications." Awarded by:University of New South Wales. Centre for Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/29371.

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Transparent conductive oxides (TCOs) and polycrystalline silicon (poly-Si) thin-films are very promising for application in photovoltaics. It is extremely challenging to develop cheap TCOs and poly-Si films to make photovoltaic devices. The aim of this thesis is to study sputtered aluminum-doped ZnO TCO and poly-Si films by solid-phase crystallization (SPC) for application in low-cost photovoltaics. The investigated aspects have been (i) to develop and characterize sputtered aluminum-doped ZnO (ZnO:Al) films that can be used as a TCO material on crystalline silicon solar cells, (ii) to explore the potential of the developed ZnO:Al films for application in ZnO:Al/c-Si heterojunction solar cells, (iii) to make and characterize poly-Si thin-films on different kinds of glass substrates by SPC using electron-beam evaporated amorphous silicon (a-Si) [referred to as EVA poly-Si material (SPC of evaporated a-Si)], and (iv) to fabricate EVA poly-Si thin-film solar cells on glass and improve the energy conversion efficiency of these cells by post-crystallization treatments. The ZnO:Al work in this thesis is focused on the correlation between film characteristics and deposition parameters, such as rf sputter power (Prf), working gas pressure (Pw), and substrate temperature (Tsub), to get a clear picture of film properties in the optimized conditions for application in photovoltaic devices. Especially the laterally non-uniform film properties resulting from the laterally inhomogeneous erosion of the target material are investigated in detail. The influence of Prf, Pw and Tsub on the structural, electrical, optical and surface morphology properties of ZnO:Al films is discussed. It is found that the lateral variations of the parameters of ZnO:Al films prepared by rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. ZnO:Al/c-Si heterojunction solar cells are fabricated and characterized to demonstrate the feasibility of the fabricated ZnO:Al films for application in heterojunction solar cells. In this application, expensive indium-tin oxide (ITO) is usually used. Under the standard AM1.5G spectrum (100 mW/cm2, 25 ??C), the best fabricated cell shows an open-circuit voltage of 411 mV, a short-circuit current density of 30.0 mA/cm2, a fill factor of 66.7 %, and a conversion efficiency of 8.2 %. This is believed to be the highest stable efficiency ever reported for this type of cell. By means of dark forward current density-voltage-temperature (J-V-T) measurements, it is shown that the dominant current transport mechanism in the ZnO:Al/c-Si solar cells, in the intermediate forward bias voltage region, is trap-assisted multistep tunneling. EVA poly-Si thin-films are prepared on four types of glass substrates (planar and textured glass, both either bare or SiN-coated) based on evaporated Si, which is a cheaper Si deposition method than the existing technologies. The textured glass is realized by the UNSW-developed AIT process (AIT = aluminium-induced texture). The investigation is concentrated on finding optimized process parameters and evaluating film crystallization quality. It is found that EVA poly-Si films have a grain size in the range 0.8-1.5 ??m, and a preferential (111) orientation. UV reflectance and Raman spectroscopy measurements reveal a high crystalline material quality, both at the air-side surface and in the bulk. EVA cells are fabricated in both substrate and superstrate configuration. Special attention is paid to improving the Voc of the solar cells. For this purpose, after the SPC process, the samples receive the two post-crystallization treatments: (i) a rapid thermal anneal (RTA), and (ii) a plasma hydrogenation. It is found that two post-crystallization treatments more than double the 1-Sun Voc of the substrate-type cells. It is demonstrated that RTA improves the structural material quality of the cells. Furthermore, a hydrogenation step is shown to significantly improve the electronic material quality of the cells. Based on the RTA???d and hydrogenated EVA poly-Si material, the first mesa-type EVA cells are fabricated in substrate configuration, by using sputtered Al-doped ZnO as the transparent front contact. The investigation is focused on addressing the correlation between the type of the substrate and cell performance. Optical, electrical and photovoltaic properties of the devices are characterized. It is found that the performance of EVA cells depends on the glass substrate topography. For cells on textured glass, the AIT texture is shown to have a beneficial effect on the optical absorption of EVA films. It is demonstrated that a SiN barrier layer on the AIT-textured glass improves significantly both the crystalline quality of the poly-Si films and the energy conversion efficiency of the resulting solar cells. For cells on planar glass, a SiN film between the planar glass and the poly-Si film has no obvious effect on the cell properties. The investigations in this thesis clearly show that EVA poly-Si films are very promising for poly-Si thin-film solar cells on glass.
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Morken, Michael Owen Morken. "An Investigation Into The Feasibility Of Transparent Conductive Coatings At Visimax Technologies." Case Western Reserve University School of Graduate Studies / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=case1496835960043161.

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Heimke, Bruno. "RF überlagertes DC-Sputtern von transparenten leitfähigen Oxiden." Doctoral thesis, Universitätsbibliothek Chemnitz, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-116687.

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Die vorliegende Dissertation befasst sich mit dem RF- überlagerten DC-Sputtern von Indiumzinnoxid und aluminiumdotierten Zinkoxid. Bei dem dafür entwickelten synchron gepulsten RF/DC-Verfahren werden die zu untersuchenden Materialien gleichzeitig mit Hilfe eines RF- und eines PulsDC-Generators gesputtert. Ein wesentliches Resultat der Untersuchungen ist, dass durch RF- überlagertes DCSputtern Schichten abgeschieden werden können, die im Vergleich zum DC- bzw. PulsDC-Sputtern geringere spezifische Widerstände aufweisen. Dies ist auf eine Verringerung von Defekten in den abgeschiedenen Schichten zurückzuführen. Es konnte anhand der Untersuchungen gezeigt werden, dass fur die Abscheidung von Indiumzinnoxid und aluminiumdotiertem Zinkoxid die Substrattemperatur beim RF überlagerten DC-Sputtern gegenüber dem DC-Sputtern um bis zu 100°C verringert werden kann.
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Heimke, Bruno. "RF überlagertes DC-Sputtern von transparenten leitfähigen Oxiden." Doctoral thesis, Universitätsverlag der Technischen Universität Chemnitz, 2012. https://monarch.qucosa.de/id/qucosa%3A19919.

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Die vorliegende Dissertation befasst sich mit dem RF- überlagerten DC-Sputtern von Indiumzinnoxid und aluminiumdotierten Zinkoxid. Bei dem dafür entwickelten synchron gepulsten RF/DC-Verfahren werden die zu untersuchenden Materialien gleichzeitig mit Hilfe eines RF- und eines PulsDC-Generators gesputtert. Ein wesentliches Resultat der Untersuchungen ist, dass durch RF- überlagertes DCSputtern Schichten abgeschieden werden können, die im Vergleich zum DC- bzw. PulsDC-Sputtern geringere spezifische Widerstände aufweisen. Dies ist auf eine Verringerung von Defekten in den abgeschiedenen Schichten zurückzuführen. Es konnte anhand der Untersuchungen gezeigt werden, dass fur die Abscheidung von Indiumzinnoxid und aluminiumdotiertem Zinkoxid die Substrattemperatur beim RF überlagerten DC-Sputtern gegenüber dem DC-Sputtern um bis zu 100°C verringert werden kann.
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Sasi, Abdalla Suliman. "Energy efficiency of solar heat concentrators using glass coated Al doped ZnO transparent conducting oxide as selective absorber." Thesis, Cape Peninsula University of Technology, 2017. http://hdl.handle.net/20.500.11838/2699.

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Thesis (Master of Engineering in Mechanical Engineering)--Cape Peninsula University of Technology, 2017.
Transparent conductive oxides (TCOs), which are widely used in transparent electronics, possess a spectral selectivity that is suitable for a solar material absorber. TCO materials have a plasma wavelength in the infrared region. Consequently electromagnetic waves shorter than a plasma wavelength are transmitted through the material, while longer electromagnetic waves are reflected on the surface. In contrast to the opaque solar selective absorbers, the plasma wavelength in TCO materials can be easily tuned by controlling the heavy doping process to match the peak shift of thermal radiation at higher temperatures. Furthermore, the use of TCO in conjunction with a solar absorber relaxes the spectral selectivity of the latter and thus widens the selection of the solar absorber; subsequently the only requirement is a thermally stable black body. Aluminum doped Zinc Oxide (AZO) is a class of TCO materials which is cost effective to manufacture due to abundance ZnO, and Aluminum raw materials. This thesis is based on the synthesis of Al doped ZnO thin films nanostructure using radio frequency RF magnetron sputtering process. The influence of the deposition parameters, including argon working pressure and substrate temperature, on the structural and optical properties of the AZO thin films is investigated by means of X-ray diffraction (XRD) and optical spectroscopy (UV-VIS-NIR). The optical constants of AZO films are extracted from transmittance and reflectance spectra using a combination of Drude and Lorentz dielectric function model. A computer simulation is developed to calculate the radiative properties of Al doped ZnO thin films nanostructure. The thermal emittance and solar absorptance is predicted indirectly from optical reflectance and transmittance of AZO films by invoking Kirchhoff’s law. A Special attention has been paid to the parameters that influence the spectral properties of the AZO films including carrier’s mobility, Al doping concentration and film thickness. Carrier’s mobility turned out to have the most significant influence on the spectrally selective performance of AZO films.
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Mavlonov, Abdurashid. "Doping Efficiency and Limits in Wurtzite (Mg,Zn)O Alloys." Doctoral thesis, Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-214372.

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In this thesis, the structural, optical, and electrical properties of wurtzite MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been investigated in dependence on Mg and dopant concentration. Among the transparent conductive oxides (TCOs), ZnO based compounds have gained renewed interest as a transparent electrode for large scale applications such as defroster windows, at panel displays, touch screens, and thin film solar cells due to low material and processing cost, non-toxicity, and suitable physical properties. In general, these applications require transparent electrodes with lowest possible resistivity of rho < 10^-3 Ohmcm and lower [1]. Recently, it has been reported that Ga and Al doped ZnO thin films can be deposited with respective resistivity of 5x10^-5 Ohmcm [2] and 3 x10^-5 Ohmcm [3] which are similar to the data obtained for other practical TCOs, i.e. the resistivity of about 4x 10^-5 Ohmcm for Sn doped In2O3 (ITO) thin films [4]. Moreover, the bandgap of ZnO can be increased by alloying with Mg offering band alignment between transparent electrode and active (or buffer) layer of the device, e.g. Cu(In,Ga)Se2 solar cells [5]. The tunable bandgap of these transparent electrodes can further increase the efficiency of the devices by avoiding energy losses in the interface region of the layers. From this point of view, this work has been aimed to investigate the doping efficiency and limits in transparent conductive (Mg,Zn)O alloys. For this purpose, the samples investigated in this work have been grown by pulsed-laser deposition (PLD) using a novel, continuous composition spread method (CCS). In general, this method allows to grow thin films with lateral composition gradient(s) [6, 7]. All MgxZn1-xO:Al and MgxZn1-xO:Ga thin films have been deposited on 2-inch in diameter glass, c- or r-plane sapphire substrates using threefold segmented PLD targets in order to grow thin films with two perpendicular, lateral composition gradients, i.e. the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction [7, 8]. In order to investigate the influence of the temperature, samples grown at different substrate temperatures in the range of 25 to 600 C were investigated. The optical and electrical measurements have been carried out on (5x 5)mm^2 samples that were cut from the CCS wafers along the respective composition gradients, i.e. Mg and Al/Ga contents. Subsequently, physical properties of thin films have been analyzed for a large range of Al/Ga content between 0.5 and 7 at.%, which corresponds to doping concentrations between 2x 10^20 and 3x 10^21 cm^-3, for different Mg contents x(Mg) ranging from 0.01 to 0.1. It has been found that practically the limiting the dopant concentrations is about 2 x10^21 cm^-3. Further, the electrical data suggests, that the compensating intrinsic defect is doubly chargeable hinting to the zinc vacancy (V_Zn) as microscopic origin. Increasing the dopant concentration above 2 x10^21 cm^-3 leads to a degradation of electrical and structural properties [8]. Further, the influence of growth and annealing temperatures on structural, electrical and optical properties of the films has been studied. For that purpose, Al and Ga doped (2.5 at.% = 1x10^21 cm^-3) Mg0.05Zn0.95O thin films have been chosen from CCS samples grown at T_g = (25 - 600) C . For both doping series, the samples grown at higher temperatures exhibit better crystalline quality compared to the samples grown at lower growth temperatures. As a result, samples grown at higher temperatures reveal higher Hall mobility. For the Al-doping series, the highest free charge carrier density of n = 8.2x 10^20 cm^-3 was obtained for an Mg0.05Zn0.95O:Al thin film grown at 200 C, with corresponding Hall mobility of mu = 13.3 cm^2/Vs, a resistivity of rho = 5.7x10^-4 Ohmcm, and optical bandgap of E_g = 3.8 eV. Interestingly, the free charge carrier density of n = (5 - 8) x 10^20 cm^-3 for samples grown with T_g > 300 C is clearly higher than the value of n = 1.25 x 10^20 cm^-3 that was obtained for the high temperature grown sample, i.e. at T_g = 600 C. Furthermore, for all T_g, Al-doped films have a higher doping efficiency than the Ga-doped counterparts. In order to look deeper into the microscopic origin of this behavior, the samples were post-annealed in vacuum at 400 C. Experimental results showed that the free charge carrier density of Al-doped samples first decreased and saturated afterward with increasing annealing time. On the other hand, the free charge carrier density of the Ga-doped samples first slightly increased and saturated with increasing annealing time. For both doping series, the saturation value of n ~ 1 x 10^20 cm^-3 was very close to the data that has been observed for (i) high temperature grown samples and (ii) the solubility limit of Al in ZnO of 0.3 at.% = 1.2x 10^20 cm^-3, that has been determined by Shirouzu et al. for high temperature grown (T_g > 600 C) Al-doped ZnO [9]. Correspondingly, the optical bandgap also changed, i.e. increased (decreased) for Al- (Ga-) doping series, and approached a constant value of 3.5 0 +- 0.1 eV which is explained by generation of acceptor-like compensating defects, and the solubility limit of the dopants. From XRD data, no secondary phases were found for as-grown and post-annealed films. However, the slight improvement of crystalline quality has been observed on post-annealed samples. Further, it has been shown that the growth and annealing temperatures are important as they strongly affect the metastable state of the solid solution that samples grown at low temperature represent. The low solubility limit of the dopants, i.e. 0.3 at.% for Al in ZnO under equilibrium condition, can be increased by preparing samples by non-equilibrium growth techniques [10]. This is also consistent with experimental results of this work that Al- as well as Ga-doped metastable ZnO and (Mg,Zn)O thin films can be prepared with highest possible doping efficiency for the dopant concentration up to 2.5 at.% when growth or annealing temperatures below 400 C are used.
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Cheikh, Aimane. "Etudes des hétérostructures à bases d'oxydes complexes pour de potentielles utilisations en cellules solaires." Thesis, Normandie, 2020. http://www.theses.fr/2020NORMC208.

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Grace à leurs propriétés fonctionnelles prometteuses, l’étude des oxydes ternaires à base de vanadium déposés sous forme de couche mince ont suscité beaucoup d’intérêt et ont fait l’objet d’une activité intense en recherche dans le domaine optoélectronique et photovoltaïque.Durant ce travail de thèse, on a étudié dans un premier temps la possibilité d’utiliser les métaux fortement corrélés tel que SrVO3 comme étant un oxyde transparent et conducteur (TCO). Pour cela, on a étudié l’évolution des propriétés optoélectroniques en fonction des conditions de croissance du SrVO3 déposé sous forme de couche mince. Dans un deuxième temps, notre étude s’est focalisée sur la réalisation d’une ingénierie de cellule solaire basée sur les hétérostructures tout oxyde de différentes bandes interdites. Pour cela, par un choix judicieux de la largeur de bande interdite de certaines pérovskites, nous avons synthétisé le LaVO3, dont l’absorption est optimale dans le spectre solaire, sur un substrat SrTiO3 sous différentes conditions de croissance. Du point de vue optique, l’étude des hétérostructures LaVO3/SrTiO3 déposé à basse pression d’oxygène a mis en évidence que le film LaVO3 possède une bande interdite de 1.18 eV se situant dans la plage optimale pour le photovoltaïque. Du point de vue électrique, l’interface polaire LaVO3/ SrTiO3 génère une couche d’interface conductrice qui servira de contact électrique pour les cellules solaires. Un autre intérêt du LaVO3 est sa structure cristalline commune à un grand nombre d’oxydes possédant des différentes valeurs des bandes interdites. Pour réaliser notre système, nous avons choisi en particulier la pérovskite LaFeO3 ayant une bande interdite de 2.2 eV, supérieure à celle du LaVO3 afin d’améliorer l’absorption optique à haute énergie. Une fois les propriétés optoélectroniques ont été établies, nous avons synthétisé l’empilement LFO/LVO sur un substrat SrTiO3 à basse pression d’oxygène. L’évolution des propriétés de notre système en fonction de l’épaisseur de LaFeO3 déposé est également étudié, mais jusqu’à présent aucune propriété de photoconductivité n’a été obtenue
Due to their promising functional properties, ternary oxide thin films based on Vanadium have gained much research interest in photovoltaic technologies.During this work, we first studied the possibility to use the strongly correlated metal SrVO3 as a transparent conducting oxide (TCO). For this reason, we have studied the optoelectronic properties of SrVO3 under different growth conditions. Second, our study was focused on making band gap-graded design solar cells based on oxide heterostructures. LaVO3 is particularly interesting due to its optical band gap localized in the optimal range for harvesting solar light. Accordingly, the LaVO3 was synthetized on SrTiO3 substrate under different growth conditions. Optical measurements reveal that LaVO3/SrTiO3 heterostructure grown at low oxygen pressure possess a band gap of 1.18 eV in the ideal energy range for photovoltaic. Electrical properties show that the interface LaVO3/ SrTiO3 is conducting, serving as an electrical contact for solar cells. Another interest of LaVO3 is its crystalline structure offering the possibility to combine it with other structurally compatible transition metal oxides with larger band gap such as LaFeO3 (2.2 eV) in order to enhance the optical absorption at high energy. Once the optoelectronic properties have been established, the LFO/LVO heterostructure was synthetized on SrTiO3 substrate at low oxygen pressure. The physical properties of our system have been also investigated for different LaFeO3 thickness but, to date, no photoconductivity was obtained
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Giangolini, Matteo. "Production and characterization of tin oxide thin films deposited via solution combustion synthesis." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2018. http://amslaurea.unibo.it/15816/.

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The main goal of this thesis work is the production and characterization of Tin oxide thin film deposited via Solution Combustion Synthesis (SCS). Different precursors are used in order to study the effect of the chemical nature of the reagent on the structural, morphological and electrical properties of the thin films. Tin oxide was chosen because is one of the most promising candidates for p-type oxide. In fact, the semiconductor oxides reported in the literature are mostly limited to n-type and there is a need for solution processed p-type oxide semiconductors to achieve Complementary Metal Oxide Semiconductors (CMOS) using all oxide materials. Anyway, the production window of solution processed for p-type SnO is narrow and Silver doping will be used to enhance the probability to get it. If production of p-type Tin oxide will not be achieved, the work will be focused on n-type SnO2 and on the optimisation of devices made with this material, either Thin Film Transistors (TFTs) or Transparent Conductive Oxides (TCOs). Samples made in this work show good optical properties, like transmittance over 80% and energy gap values around 3.79 eV, but none of them turned out to be a p-type oxide or a good TFT. Samples annealed at higher temperatures have good electrical conductivity properties, which could lead to a future study in order to optimise these materials for TCO purposes.
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Books on the topic "Transparent conductive oxides (TCO)"

1

Atomic Layer Deposition of Zinc Based Transparent Conductive Oxides. Fraunhofer IRB Verlag, 2017.

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Book chapters on the topic "Transparent conductive oxides (TCO)"

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Nakane, Akihiro, Shohei Fujimoto, Masato Tamakoshi, Takashi Koida, James N. Hilfiker, Gerald E. Jellison, Takurou N. Murakami, Tetsuhiko Miyadera, and Hiroyuki Fujiwara. "Transparent Conductive Oxides." In Spectroscopic Ellipsometry for Photovoltaics, 495–541. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-95138-6_11.

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Hosono, Hideo, and Kazushige Ueda. "Transparent Conductive Oxides." In Springer Handbook of Electronic and Photonic Materials, 1. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-48933-9_58.

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Ellmer, Klaus, Rainald Mientus, and Stefan Seeger. "Metallic Oxides (ITO, ZnO, SnO2 , TiO2 )." In Transparent Conductive Materials, 31–80. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2018. http://dx.doi.org/10.1002/9783527804603.ch2_1.

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Subramanian, Vivek. "Solution-Processed Electronics Based on Transparent Conductive Oxides." In Transparent Electronics, 231–42. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch9.

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Bright, Clark I. "Deposition and Performance Challenges of Transparent Conductive Oxides on Plastic Substrates." In Transparent Electronics, 103–40. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch5.

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Sohn, Sunyoung, and Yoon Soo. "Transparent Conductive Oxide (TCO) Films for Organic Light Emissive Devices (OLEDs)." In Organic Light Emitting Diode - Material, Process and Devices. InTech, 2011. http://dx.doi.org/10.5772/18545.

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Khan, Arshad, Shawkat Ali, Saleem Khan, Moaaz Ahmed, Bo Wang, and Amine Bermak. "Vacuum-Free Fabrication of Transparent Electrodes for Soft Electronics." In Nanofibers - Synthesis, Properties and Applications. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96311.

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Optoelectronic devices are advancing from existing rigid configurations to deformable configurations. These developing devices need transparent electrodes (TEs) having high mechanical deformability while preserving the high electrical conductivity and optical transparency. In agreement with these requirements, vacuum-fabricated conventional TEs based on transparent conducting oxides (TCOs) are receiving difficulties due to its low abundance, film brittleness, and low optical transmittance. Novel solution-processed TE materials including regular metal meshes, metal nanowire (NW) grids, carbon materials, and conducting polymers have been studied and confirmed their capabilities to address the limitations of the TCO-based TEs. This chapter presents a comprehensive review of the latest advances of these vacuum-free TEs, comprising the electrode material classes, the optical, electrical, mechanical and surface feature properties of the soft TEs, and the vacuum-free practices for their fabrication.
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Minami, Tadatsugu. "Transparent Conductive Oxides for Transparent Electrode Applications." In Semiconductors and Semimetals, 159–200. Elsevier, 2013. http://dx.doi.org/10.1016/b978-0-12-396489-2.00005-9.

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Ray, A. "Transparent Conducting Electrodes for Optoelectronic Devices: State-of-the-art and Perspectives." In Materials Research Foundations, 77–113. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901410-4.

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This chapter brings a concise review of the transparent conducting materials, films and electrodes (TCM, TCF and TCE, respectively), its state-of-the-art and outlooks ahead. Initial part of the chapter gives a general introduction of the topic, followed by a feasible road map as proposed and collated by the authors based on several other reviews. Fundamental physics behind the transparent conductors is discussed in the latter part. Established and potential oxide based TCMs, namely the transparent conducting oxides (TCOs) are reviewed which are being used commercially and will see application in the near future. Non-conventional TCMs, which are mostly non-TCOs, such as graphene, carbon nanotubes (CNT), metallic nanowires (MNWs) and their hybrids are described in brief. Scalability and large area fabrication which are most important concerns for commercialization of TCMs are discussed. The general prospects are given at the end.
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Sajjia, Mustafa, Ahmad Baroutaji, Hussam Achour, and Abdul G. Olabi. "Transparent Conductive Oxides Thin Films for Radio Frequency Attenuation." In Reference Module in Materials Science and Materials Engineering. Elsevier, 2017. http://dx.doi.org/10.1016/b978-0-12-803581-8.09265-1.

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Conference papers on the topic "Transparent conductive oxides (TCO)"

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Shimizu, Makoto, Mari Suzuki, Asaka Kohiyama, Fumitada Iguchi, and Hiroo Yugami. "Application of Transparent Conductive Oxides Films for High-Temperature Solar Selective Absorbers." In ASME 2014 8th International Conference on Energy Sustainability collocated with the ASME 2014 12th International Conference on Fuel Cell Science, Engineering and Technology. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/es2014-6353.

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At present, the utilization of thermal energy from sunlight has been widely adopted as the working principle of concentrated solar power (CSP) generation systems. In this research, we suggest a CSP technology based on the properties of transparent conductive oxide (TCO) films on metal substrates which is compatible with mass production of solar selective absorbers that can be utilized at high temperatures. TCO material has plasma wavelength in infrared region. Therefore the electromagnetic wave with shorter wavelength than plasma wavelength goes through the material, while the electromagnetic wave with longer wavelength is reflected on the surface. By coating metal surface with a TCO film, interference is occurred in transparent wavelength range of TCO. Therefore, solar energy is highly absorbed, though thermal radiation from the absorber is suppressed. The optical property of fabricated TCO coated metal is well consistent with the simulated property. It is revealed that the performance of the absorber is improved by fabricating microstructures on the metal substrate. Thermal stability is confirmed at 700°C in vacuum for 3 hours. Solar absorptance and hemispherical emittance of the fabricated absorber are 0.82 and 0.17, respectively, which is comparable to that of commercialized absorbers.
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Shimizu, Makoto, Fumitada Iguchi, and Hiroo Yugami. "High-Temperature Solar Selective Absorbers Based on Interface Effects in Refractory Metals Coated With Transparent Conductive Oxides." In ASME 2012 6th International Conference on Energy Sustainability collocated with the ASME 2012 10th International Conference on Fuel Cell Science, Engineering and Technology. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/es2012-91256.

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At present, the utilization of thermal energy from sunlight has been widely adopted as the working principle of concentrated solar power (CSP) generation systems. In this research, we suggest a CSP technology based on the properties of transparent conductive oxide (TCO) thin films on metal substrates which is compatible with mass production of solar selective absorbers that can be utilized at high temperatures. Since the plasma wavelength of TCO materials is in the infrared region, electromagnetic waves with wavelengths longer than the plasma wavelength are reflected at the surface, whereas electromagnetic waves with shorter wavelengths pass through the surface layer and reach the substrate. In other words, a TCO thin film behaves as an antireflection film only in the transparency range of TCO coating. This phenomenon is demonstrated through numerical simulations based on rigorous coupled-wave analysis (RCWA). The prepared samples also show favorable spectral selectivity and satisfactory performance as solar selective absorbers, with a solar absorptance of 0.76, a thermal emittance of 0.12 at 800°C and a spectral selectivity of 6.5 at 800°C.
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Caglayan, Humeyra, and Nader Engheta. "Theory of Near-IR Metatronic Nanocircuits Using Transparent Conducting Oxides (TCO)." In Frontiers in Optics. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/fio.2011.ftug2.

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Muthukumar, Anusha, Germain Rey, Gael Giusti, Vincent Consonni, Estelle Appert, Hervé Roussel, Arivuoli Dakshnamoorthy, and Daniel Bellet. "Fluorine doped tin oxide (FTO) thin film as transparent conductive oxide (TCO) for photovoltaic applications." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4791235.

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Emad, Ahmed, Ayman Roshdy Rashad, Irene S. Fahim, and Tawfik Ismail. "1D (1-Dimensional) Si P-N Junction with Organic Materials and Transparent Conductive Oxides (TCOs) Alternatives." In 2020 IEEE PES/IAS PowerAfrica. IEEE, 2020. http://dx.doi.org/10.1109/powerafrica49420.2020.9219815.

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Chen, Yu-Chen, Wen-Kai Chen, Jing-Chi Huang, and Jia-Yang Juang. "Deposition of Highly Transparent and Conductive Films on Tilted Substrates by Atmospheric Pressure Plasma Jet." In ASME 2019 28th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/isps2019-7423.

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Abstract We study the influence of the substrate tilt angle on the microstructure and optoelectronic properties of gallium-doped zinc oxide (GZO) thin films deposited by the atmosphere pressure plasma jet (APPJ) method. The nozzle trajectories play a key role in oblique angle deposition. In the process of oblique angle deposition, if the nozzle scanned from the upstream side to the downstream side, the electrical properties such as resistivity, carrier concentration and mobility deteriorate considerably. The optical properties also worsen — specular transmittance goes down and diffuse transmittance increase to a significant amount. This degradation can be attributed to the “pre-deposition” of the GZO adsorbed particles (ad-particles) on the downstream side of the raw glass where the nozzle has not scanned. These GZO ad-particles serve as nuclei on which the incoming vapor particles deposit preferentially. Scanning electron microscopy (SEM), and grazing incidence X-ray diffraction (GIXRD confirmed that the film near the downstream is thicker, less smooth, and porous than that near the upstream. The undesirable situation can be mitigated or even completely removed via proper nozzle scanning trajectories — reversing the scanning trajectory of the nozzle. If the nozzle scans from the downstream side to the upstream side, no pre-deposition of the GZO ad-particles to deteriorate the film properties and therefore the obliquely deposited films perform as well as the films deposited without tilt, i.e. flat substrate. This work presents a solution to the challenge of depositing TCO on tilted and curved surfaces.
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Zhang, Martin Y., Qiong Nian, and Gary J. Cheng. "Deposition of Al-Doped Zinc Oxide by Direct Pulsed Laser Recrystallization at Room Temperature on Various Substrates for Solar Cell Applications." In ASME 2012 International Manufacturing Science and Engineering Conference collocated with the 40th North American Manufacturing Research Conference and in participation with the International Conference on Tribology Materials and Processing. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/msec2012-7381.

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In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) are introduced to deposit superior transparent conductive oxide (TCO) layer on low melting point flexible substrates. As an indispensable component of thin film solar cell, TCO layer with a higher quality will improve the overall performance of solar cells. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal electrical and optical properties of AZO on low melting point flexible substrate is challenging. Recently developed direct pulsed laser recrystallization (DPLR) technique is a scalable, economic and fast process for point defects elimination and recrystallization at room temperature. It features selective processing by only heating up the TCO thin film and preserve the underlying substrate at low temperature. In this study, 250 nm AZO thin film is pre-deposited by pulsed laser deposition (PLD) on flexible and rigid substrates. Then DPLR is introduced to achieve a uniform TCO layer on low melting point flexible substrates, i.e. commercialized Kapton polyimide film and micron-thick Al-foil. Both finite element analysis (FEA) simulation and designed experiments are carried out to demonstrate that DPLR is promising in manufacturing high quality AZO layers without any damage to the underlying flexible substrates. Under appropriate experiment conditions, such as 248 nm in laser wavelength, 25 ns in laser pulse duration, 15 laser pulses at laser fluence of 25 mJ/cm2, desired temperature would result in the AZO thin film and activate the grain growth and recrystallization. Besides laser conditions, the thermal conductivity and crystallinity of the substrate serve as additional factors in the DPLR process. It is found that the substrate’s thermal conductivity correlates positively with the AZO crystal size; the substrate’s crystallinity correlates positively with the AZO film’s crystallinity. The thermal expansion of substrate would also contribute to the film tensile stress after processed by DPLR technique. The overall results indicate that DPLR technique is useful and scalable for flexible solar cell manufacturing.
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Yi, Fei, Fang Ou, Boyang Liu, Yingyan Huang, Seng-Tiong Ho, Yiliang Wang, Jun Liu, et al. "Compact Organic Electro-Optic (EO) Modulator with Ultra Low Switching Voltage and Large Bandwidth Using Transparent Conducting Oxides (TCO) Bridge Electrodes." In Frontiers in Optics. Washington, D.C.: OSA, 2009. http://dx.doi.org/10.1364/fio.2009.fthe3.

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Ro¨ger, Marc, Christoph Rickers, Ralf Uhlig, Frank Neumann, and Christina Polenzky. "Infrared-Reflective Coating on Fused Silica for a Solar High-Temperature Receiver." In ASME 2007 Energy Sustainability Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/es2007-36033.

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In concentrating solar power, high-temperature solar receivers can provide heat to highly efficient cycles for electricity or chemical production. Excessive heating of the fused-silica window and the resulting recrystallization are major problems of high-temperature receivers using windows. Excessive window temperatures can be avoided by applying an infrared-reflective solar-transparent coating on the fused-silica window inside. Both glass temperatures and receiver losses can be reduced. An ideal coating reflects part of the thermal spectrum (λ>2.5 μm) of the hot absorber (1100°C) back onto it without reducing solar transmittance. The examined transparent conductive oxides (TCO) involve a high solar absorptance, inhibiting their use in high-concentration solar systems. Although conventional dielectric interference filters have a low solar absorption, the reflection of solar radiation which comes from various directions is too high. It was found that only rugate filters fulfill the requirements for operation under high-flux solar radiation with different incident angles. A thermodynamic qualification simulation of the rugate coating on a window of a flat-plate receiver showed a reduction of almost 175 K in mean window temperature and 11% in receiver losses compared to an uncoated window. Finally, a first 25-μm thick rugate filter was manufactured and optically characterized. The issue of this paper is to share the work done on the choice of filter type, filter design, thermodynamic evaluation, and deposition experiments.
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Johnson, Linda F., and Mark B. Moran. "Infrared transparent conductive oxides." In Aerospace/Defense Sensing, Simulation, and Controls, edited by Randal W. Tustison. SPIE, 2001. http://dx.doi.org/10.1117/12.439187.

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