Relevant bibliographies by topics / Transparent oxide semiconductors

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  2. Dissertations / Theses
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Academic literature on the topic 'Transparent oxide semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "Transparent oxide semiconductors"

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Minami, Tadatsugu. "Transparent conducting oxide semiconductors for transparent electrodes." Semiconductor Science and Technology 20, no. 4 (2005): S35—S44. http://dx.doi.org/10.1088/0268-1242/20/4/004.

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Ohta, Hiromichi, Kenji Nomura, Hidenori Hiramatsu, et al. "Frontier of transparent oxide semiconductors." Solid-State Electronics 47, no. 12 (2003): 2261–67. http://dx.doi.org/10.1016/s0038-1101(03)00208-9.

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King, P. D. C., and T. D. Veal. "Conductivity in transparent oxide semiconductors." Journal of Physics: Condensed Matter 23, no. 33 (2011): 334214. http://dx.doi.org/10.1088/0953-8984/23/33/334214.

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Fortunato, Elvira, Alexandra Gonçalves, António Marques, et al. "Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices." Materials Science Forum 514-516 (May 2006): 3–7. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.3.

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In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.
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Hosono, Hideo, Masahiro Yasukawa, and Hiroshi Kawazoe. "Novel oxide amorphous semiconductors: transparent conducting amorphous oxides." Journal of Non-Crystalline Solids 203 (August 1996): 334–44. http://dx.doi.org/10.1016/0022-3093(96)00367-5.

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Afre, Rakesh A., Nallin Sharma, Maheshwar Sharon, and Madhuri Sharon. "Transparent Conducting Oxide Films for Various Applications: A Review." REVIEWS ON ADVANCED MATERIALS SCIENCE 53, no. 1 (2018): 79–89. http://dx.doi.org/10.1515/rams-2018-0006.

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Abstract This review encompasses properties and applications of polycrystalline or amorphous, Transparent Conducting Oxides (TCO) semiconductors. Coexistence of electrical conductivity and optical transparency in TCO depends on the nature, number and atomic arrangements of metal cations in oxides, on the resident morphology and presence of intrinsic or introduced defects. Therefore, TCO semiconductors that are impurity-doped as well as the ternary compounds and multi-component oxides consisting of combinations are discussed. Expanding use of TCO is endangered by scarcity, cost of In, fragility of glass, limited transparency to visible light, instability above >200 °C, non-flexible for application of flexible solar cell; thus driving search for alternatives such as graphene or CNT, that are more stable under acidic, alkaline, oxidizing, reducing and elevated temperature. There are reasons to conclude that there is need to develop large area deposition techniques to produce TCO films with high deposition rate. TCOs are mostly n-type semiconductors, but p-type are also being researched
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Han, Seung-Yeol, Doo-Hyoung Lee, Gregory S. Herman, and Chih-Hung Chang. "Inkjet-Printed High Mobility Transparent–Oxide Semiconductors." Journal of Display Technology 5, no. 12 (2009): 520–24. http://dx.doi.org/10.1109/jdt.2009.2024330.

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Philip, J., A. Punnoose, B. I. Kim, et al. "Carrier-controlled ferromagnetism in transparent oxide semiconductors." Nature Materials 5, no. 4 (2006): 298–304. http://dx.doi.org/10.1038/nmat1613.

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Nathan, Arokia, Sungsik Lee, Sanghun Jeon, Ihun Song, and U.-In Chung. "Transparent Oxide Semiconductors for Advanced Display Applications." Information Display 29, no. 1 (2013): 6–11. http://dx.doi.org/10.1002/j.2637-496x.2013.tb00577.x.

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Minami, Tadatsugu. "New n-Type Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (2000): 38–44. http://dx.doi.org/10.1557/mrs2000.149.

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Most research to develop highly transparent and conductive thin films has focused on n-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2 and In2O3 were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2 (Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4 were developed prior to 1980, but their TCO films have not yet been used widely.
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Dissertations / Theses on the topic "Transparent oxide semiconductors"

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Lajn, Alexander. "Transparent rectifying contacts on wide-band gap oxide semiconductors." Doctoral thesis, Universitätsbibliothek Leipzig, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-102799.

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Die vorliegenden Arbeit befasst sich mit der Herstellung und Charakterisierung von transparenten Metall-Halbleiter- Feldeffekttransistoren. Dazu werden im ersten Kapitel transparente gleichrichtende Kontakte, basierend auf dem Konzept von Metalloxidkontakten, hergestellt und im Hinblick auf chemische Zusammensetzung des Kontaktmaterials, Barriereninhomogenität und Kompatibilität mit amorphen Halbleitern untersucht. Außerdem wird die Anwendbarkeit der Kontakte als UV-Sensor studiert. Im zweiten Kapitel werden transparente leitfähige Oxide vorgestellt und insbesondere deren optische und elektrische Eigenschaften in Abhängigkeit von den Herstellungsbedingungen studiert. Das dritte Kapitel beinhaltet Untersuchungen zu transparenten Feldeffektransistoren, die auf den im ersten Kapitel untersuchten transparenten gleichrichtenden Kontakten basieren (TMESFETs). Insbesondere die elektrischen Stabilität der Bauelemente hinsichtlich Beleuchtung, erhöhten Temperaturen und Spannungsstress wird untersucht. Auch die Langzeitstabilität, Reproduzierbarkeit und der Effekt gepulster Spannungen wird betrachtet. Weiterhin wird die Verwendung amorpher Halbleiter im Kanal und damit auch die Herstellung flexibler Transistoren auf Folie demonstriert. Zuletzt werden die TMESFETs integriert und als Inverterschaltkreise aufgebaut und untersucht. Außerdem wird die Eignung der Transistoren zur Messung von Aktionspotentialen von Nervenzellen studiert.
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Song, Dengyuan Centre for Photovoltaic Engineering UNSW. "Zinc oxide TCOs (Transparent Conductive Oxides) and polycrystalline silicon thin-films for photovoltaic applications." Awarded by:University of New South Wales. Centre for Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/29371.

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Transparent conductive oxides (TCOs) and polycrystalline silicon (poly-Si) thin-films are very promising for application in photovoltaics. It is extremely challenging to develop cheap TCOs and poly-Si films to make photovoltaic devices. The aim of this thesis is to study sputtered aluminum-doped ZnO TCO and poly-Si films by solid-phase crystallization (SPC) for application in low-cost photovoltaics. The investigated aspects have been (i) to develop and characterize sputtered aluminum-doped ZnO (ZnO:Al) films that can be used as a TCO material on crystalline silicon solar cells, (ii) to explore the potential of the developed ZnO:Al films for application in ZnO:Al/c-Si heterojunction solar cells, (iii) to make and characterize poly-Si thin-films on different kinds of glass substrates by SPC using electron-beam evaporated amorphous silicon (a-Si) [referred to as EVA poly-Si material (SPC of evaporated a-Si)], and (iv) to fabricate EVA poly-Si thin-film solar cells on glass and improve the energy conversion efficiency of these cells by post-crystallization treatments. The ZnO:Al work in this thesis is focused on the correlation between film characteristics and deposition parameters, such as rf sputter power (Prf), working gas pressure (Pw), and substrate temperature (Tsub), to get a clear picture of film properties in the optimized conditions for application in photovoltaic devices. Especially the laterally non-uniform film properties resulting from the laterally inhomogeneous erosion of the target material are investigated in detail. The influence of Prf, Pw and Tsub on the structural, electrical, optical and surface morphology properties of ZnO:Al films is discussed. It is found that the lateral variations of the parameters of ZnO:Al films prepared by rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. ZnO:Al/c-Si heterojunction solar cells are fabricated and characterized to demonstrate the feasibility of the fabricated ZnO:Al films for application in heterojunction solar cells. In this application, expensive indium-tin oxide (ITO) is usually used. Under the standard AM1.5G spectrum (100 mW/cm2, 25 ??C), the best fabricated cell shows an open-circuit voltage of 411 mV, a short-circuit current density of 30.0 mA/cm2, a fill factor of 66.7 %, and a conversion efficiency of 8.2 %. This is believed to be the highest stable efficiency ever reported for this type of cell. By means of dark forward current density-voltage-temperature (J-V-T) measurements, it is shown that the dominant current transport mechanism in the ZnO:Al/c-Si solar cells, in the intermediate forward bias voltage region, is trap-assisted multistep tunneling. EVA poly-Si thin-films are prepared on four types of glass substrates (planar and textured glass, both either bare or SiN-coated) based on evaporated Si, which is a cheaper Si deposition method than the existing technologies. The textured glass is realized by the UNSW-developed AIT process (AIT = aluminium-induced texture). The investigation is concentrated on finding optimized process parameters and evaluating film crystallization quality. It is found that EVA poly-Si films have a grain size in the range 0.8-1.5 ??m, and a preferential (111) orientation. UV reflectance and Raman spectroscopy measurements reveal a high crystalline material quality, both at the air-side surface and in the bulk. EVA cells are fabricated in both substrate and superstrate configuration. Special attention is paid to improving the Voc of the solar cells. For this purpose, after the SPC process, the samples receive the two post-crystallization treatments: (i) a rapid thermal anneal (RTA), and (ii) a plasma hydrogenation. It is found that two post-crystallization treatments more than double the 1-Sun Voc of the substrate-type cells. It is demonstrated that RTA improves the structural material quality of the cells. Furthermore, a hydrogenation step is shown to significantly improve the electronic material quality of the cells. Based on the RTA???d and hydrogenated EVA poly-Si material, the first mesa-type EVA cells are fabricated in substrate configuration, by using sputtered Al-doped ZnO as the transparent front contact. The investigation is focused on addressing the correlation between the type of the substrate and cell performance. Optical, electrical and photovoltaic properties of the devices are characterized. It is found that the performance of EVA cells depends on the glass substrate topography. For cells on textured glass, the AIT texture is shown to have a beneficial effect on the optical absorption of EVA films. It is demonstrated that a SiN barrier layer on the AIT-textured glass improves significantly both the crystalline quality of the poly-Si films and the energy conversion efficiency of the resulting solar cells. For cells on planar glass, a SiN film between the planar glass and the poly-Si film has no obvious effect on the cell properties. The investigations in this thesis clearly show that EVA poly-Si films are very promising for poly-Si thin-film solar cells on glass.
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Erslev, Peter Tweedie 1979. "The electronic structure within the mobility gap of transparent amorphous oxide semiconductors." Thesis, University of Oregon, 2010. http://hdl.handle.net/1794/10566.

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xix, 142 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.
Transparent amorphous oxide semiconductors are a relatively new class of materials which show significant promise for electronic device applications. The electron mobility in these materials is at least ten times greater than that of the current dominant material for thin-film transistors: amorphous silicon. The density of states within the gap of a semiconductor largely determines the characteristics of a device fabricated from it. Thus, a fundamental understanding of the electronic structure within the mobility gap of amorphous oxides is crucial to fully developing technologies based around them. Amorphous zinc tin oxide (ZTO) and indium gallium zinc oxide (IGZO) were investigated in order to determine this sub-gap structure. Junction-capacitance based methods including admittance spectroscopy and drive level capacitance profiling (DLCP) were used to find the free carrier and deep defect densities. Defects located near insulator-semiconductor interfaces were commonly observed and strongly depended on fabrication conditions. Transient photocapacitance spectroscopy (TPC) indicated broad valence band-tails for both the ZTO and IGZO samples, characterized by Urbach energies of 110±20 meV. These large band-tail widths imply that significant structural disorder exists in the atomic lattice of these materials. While such broad band-tails generally correlate with poor electronic transport properties, the density of states near the conduction band is more important for devices such as transistors. The TPC spectra also revealed an optically active defect located at the insulator-semiconductor junction. Space-charge-limited current (SCLC) measurements were attempted in order to deduce the density of states near the conduction band. While the SCLC results were promising, their interpretation was too ambiguous to obtain a detailed picture of the electronic state distribution. Another technique, modulated photocurrent spectroscopy (MPC), was then employed for this purpose. Using this method narrow conduction band-tails were determined for the ZTO samples with Urbach energies near 10 meV. Thus, by combining the results of the DLCP, TPC and MPC measurements, a quite complete picture of the density of states within the mobility gap of these amorphous oxides has emerged. The relationship of this state distribution to transistor performance is discussed as well as to the future development of device applications of these materials.
Committee in charge: Stephen Kevan, Chairperson, Physics; J David Cohen, Member, Physics; David Strom, Member, Physics; Jens Noeckel, Member, Physics; David Johnson, Outside Member, Chemistry
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Lim, Sang-Hyun. "Characterization of p-type wide band gap transparent oxide for heterojunction devices." Amherst, Mass. : University of Massachusetts Amherst, 2009. http://scholarworks.umass.edu/dissertations/AAI3359903/.

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Sacchetti, Allegra. "Novel transparent and flexible transistors for radiation harsh environment." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9204/.

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La scoperta dei semiconduttori amorfi ha segnato l’era della microelettronica su larga scala rendendo possibile il loro impiego nelle celle solari o nei display a matrice attiva. Infatti, mentre i semiconduttori a cristalli singoli non sono consoni a questo tipo di applicazioni e i s. policristallini presentano il problema dei bordi di grano, i film amorfi possono essere creati su larga scala (>1 m^2) a basse temperature (ad es. <400 °C) ottenendo performance soddisfacenti sia su substrati rigidi che flessibili. Di recente la ricerca sta compiendo un grande sforzo per estendere l’utilizzo di questa nuova elettronica flessibile e su larga scala ad ambienti soggetti a radiazioni ionizzanti, come lo sono i detector di radiazioni o l’elettronica usata in applicazioni spaziali (satelliti). A questa ricerca volge anche la mia tesi, che si confronta con la fabbricazione e la caratterizzazione di transistor a film sottili basati su ossidi semiconduttori ad alta mobilità e lo studio della loro resistenza ai raggi X. La micro-fabbricazione, ottimizzazione e caratterizzazione dei dispositivi è stata realizzata nei laboratori CENIMAT e CEMOP dell’Università Nova di Lisbona durante quattro mesi di permanenza. Tutti i dispositivi sono stati creati con un canale n di ossido di Indio-Gallio-Zinco (IGZO). Durante questo periodo è stato realizzato un dispositivo dalle ottime performance e con interessanti caratteristiche, una delle quali è la non variazione del comportamento capacitivo in funzione della frequenza e la formidabile resistenza alle radiazioni. Questo dispositivo presenta 114 nm di dielettrico, realizzato con sette strati alternati di SiO2/ Ta2O5. L’attività di ricerca svolta al Dipartimento di Fisica e Astronomia di Bologna riguarda prevalentemente lo studio degli effetti delle radiazioni ionizzanti su TFTs. Gli esperimenti hanno rivelato che i dispositivi godono di una buona stabilità anche se soggetti alle radiazioni. Infatti hanno mostrato performance pressoché inalterate anche dopo un’esposizione a 1 kGy di dose cumulativa di raggi X mantenendo circa costanti parametri fondamentali come la mobilità, il threshold voltage e la sub-threshold slope. Inoltre gli effetti dei raggi X sui dispositivi, così come parametri fondamentali quali la mobilità, si sono rivelati essere notevolmente influenzati dallo spessore del dielettrico.
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Liu, Hanxiao. "Studies of efficient and stable organic solar cells based on aluminum-doped zine oxide transparent electrode." HKBU Institutional Repository, 2014. https://repository.hkbu.edu.hk/etd_oa/34.

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Organic solar cells (OSCs) have attracted significant attention due to their potential of large area solution fabrication capability at low-cost. For bulk heterojunction (BHJ) OSCs, a thin film of transparent conducting indium tin oxide (ITO), coated on glass or flexible plastic substrate, is widely used as a front electrode. However, indium is not abundant on Earth. Its price has increased continuously over the past 10 years and will likely become an obstacle for the commercialization of OSCs at low cost. Aluminum-doped zinc oxide (AZO) is a promising ITO alternative due to its advantages of high electric conductivity, optical transparency, non-toxicity and low cost. However, reports on OSCs using AZO electrode are quite limited, due to the relatively lower power conversion efficiency (PCE) of AZO-based OCSs as compared to that of ITO-based OCSs. This work focused on studies of high performance AZO-based OSCs through AZO surface modification, absorption enhancement and process optimization. The optical and electronic properties of AZO film including transmittance, sheet resistance, surface morphology and surface work function were characterized. AZO-based OSCs with conventional and inverted structures were fabricated. It was found that AZO-based OSCs with inverted structure demonstrated superior performance than the ones with conventional structure. The inverted structure avoids the use of acidic PEDOT:PSS hole transporting layer, allows the improving of the absorbance of the OSCs and therefore its efficiency. An AZO front transparent cathode was used for application in high performance inverted BHJ OSCs. The photoactive layer consisted a blend of poly[[4,8-bis[(2- ethylhexyl)oxy] benzo [1,2-b:4,5-b'] dithiophene-2,6- diyl][3-fluoro- 2-[(2-ethylhexyl) carbonyl]thieno[3,4-b]thiophenediyl]](PTB7):3'H-Cyclopropa[8,25][5,6]fullerene- C70- D5h(6)-3'-butanoicacid, 3'-phenyl-, methyl ester (PC70BM). A structurally identical control OSC having an ITO front cathode was also fabricated for comparison studies. The structure of OSCs was optimized to achieving absorption enhancement in the active layer. AZO and ITO were modified with a 10 nm thick solution-processed ZnO interlayer to facilitate the efficient electron extraction. The results revealed that bilayer AZO/ZnO and the ITO/ZnO cathodes possess similar electron extraction property. AZO layer has a transparency cutoff at wavelength < 380 nm, results in a slight decrease in the short-circuit current density (JSC). However, the decrease in JSC is very small because the main energy of solar irradiation falls in the spectrum with wavelength > 380 nm. It shows that AZO-based OSCs have a promising PCE of 6.15%, which is slightly lower than that of a control ITO-based OSC (6.57%). AZO-based OSCs, however, demonstrate an obvious enhancement in the stability under an ultraviolet (UV)-assisted acceleration aging test. The significant enhancement in the stability of AZO-based OSCs arises from the tailored absorption of AZO electrode in wavelength < 380 nm, which serves as a UV filter to inhibit an inevitable degradation process in ITO-based OSCs due to the UV irradiation. In order to further investigate the degradation mechanism of OSCs under UV exposure, the change in charge collection characteristics of the OSCs made with ITO/ZnO and AZO/ZnO front cathode before and after UV exposure was examined. It was found that there was an obvious decrease in the charge extraction efficiency of ITO-based OSCs after UV exposure, while there was no observable change in the charge extraction efficiency of OSCs made with AZO/ZnO cathode under the same acceleration aging test. This work demonstrates that AZO is a suitable ITO alternative for application in OSCs, offering an improved device stability, comparable PCE and cell fabrication processes with an attractive commercial potential.
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Arumskog, Pär. "A Combinatorial Chemistry Approach to the Amorphous Al-In-Zn-O Transparent Oxide Semiconductor System." Thesis, Linköpings universitet, Plasma och beläggningsfysik, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-78673.

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This report describes the successful application of a combinatorial chemistry approach to the evaluation of the amorphous transparent oxide semiconductor Al-In-Zn-O, a-AIZO, for use as channel layers in thin film transistors, TFTs. Many technologies, such as computing and electronic displays, rely on the use of the transistor. In particular, for flat panel displays, the development of new TFTs for the control electronics are necessary for thinner displays with better resolution. In addition, transparent materials deposited at low temperatures would enable a new range of applications. To accomplish this, new materials for the TFT channel layer are needed. Transparent oxide semiconductors (TOS) are one alternative the silicon based materials currently in use and the first TOS, amorphous In-Ga-Zn-O, has just gone into production. However, despite its good properties, it suffers from the disadvantage of containing the scarce and expensive metals In and Ga. Several attempts have been made to replace Ga with Al but no systematic study of a-AIZO has been reported. This report describes such a study, using a method known as combinatorial chemistry. Initially, a-AIZO thin films with composition gradients were deposited by DC/RF magnetron sputtering and, following characterization, TFTs with a variety of a-AIZO channel layer composition were manufactured and investigated. Two different compositional areas were found to yield TFTs with good characteristics.
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Lajn, Alexander [Verfasser], Marius [Akademischer Betreuer] Grundmann, Marius [Gutachter] Grundmann, and Thomas [Gutachter] Riedl. "Transparent rectifying contacts on wide-band gap oxide semiconductors / Alexander Lajn ; Gutachter: Marius Grundmann, Thomas Riedl ; Betreuer: Marius Grundmann." Leipzig : Universitätsbibliothek Leipzig, 2013. http://d-nb.info/1238242154/34.

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Kim, Yong Hyun. "Alternative Electrodes for Organic Optoelectronic Devices." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-113279.

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This work demonstrates an approach to develop low-cost, semi-transparent, long-term stable, and efficient organic photovoltaic (OPV) cells and organic light-emitting diodes (OLEDs) using various alternative electrodes such as conductive polymers, doped ZnO, and carbon nanotubes. Such electrodes are regarded as good candidates to replace the conventional indium tin oxide (ITO) electrode, which is expensive, brittle, and limiting the manufacturing of low-cost, flexible organic devices. First, we report long-term stable, efficient ITO-free OPV cells and transparent OLEDs based on poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrodes by using a solvent post-treatment or a structure optimization. In addition, a high performance internal light out-coupling system for white OLEDs based on PEDOT:PSS-coated metal oxide nanostructures is developed. Next, we demonstrate highly efficient ITO-free OPV cells and OLEDs with optimized ZnO electrodes doped with alternative non-metallic elements. The organic devices based on the optimized ZnO electrodes show significantly improved efficiencies compared to devices with standard ITO. Finally, we report semi-transparent OPV cells with free-standing carbon nanotube sheets as transparent top electrodes. The resulting OPV cells exhibit very low leakage currents with good long-term stability. In addition, the combination of various kinds of bottom and top electrodes for semi-transparent and ITO-free OPV cells is investigated. These results demonstrate that alternative electrodes-based OPV cells and OLEDs have a promising future for practical applications in efficient, low-cost, flexible and semi-transparent device manufacturing
Die vorliegende Arbeit demonstriert einen Ansatz zur Verwirklichung von kostengünstigen, semi-transparenten, langzeitstabilen und effizienten Organischen Photovoltaik Zellen (OPV) und Organischen Leuchtdioden (OLEDs) durch die Nutzung innovativer Elektrodensysteme. Dazu werden leitfähige Polymere, dotiertes ZnO und Kohlenstoff-Nanoröhrchen eingesetzt. Diese alternativen Elektrodensysteme sind vielversprechende Kandidaten, um das konventionell genutzte Indium-Zinn-Oxid (ITO), welches aufgrund seines hohen Preises und spröden Materialverhaltens einen stark begrenz Faktor bei der Herstellung von kostengünstigen, flexiblen, organischen Bauelementen darstellt, zu ersetzten. Zunächst werden langzeitstabile, effiziente, ITO-freie Solarzellen und transparente OLEDs auf der Basis von Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate) (PEDOT:PSS) Elektroden beschrieben, welche mit Hilfe einer Lösungsmittel-Nachprozessierung und einer Optimierung der Bauelementstruktur hergestellt wurden. Zusätzlich wurde ein leistungsfähiges, internes Lichtauskopplungs-System für weiße OLEDs, basierend auf PEDOT:PSS-beschichteten Metalloxid-Nanostrukturen, entwickelt. Weiterhin werden hoch effiziente, ITO-freie OPV Zellen und OLEDs vorgestellt, bei denen mit verschiedenen nicht-metallischen Elementen dotierte ZnO Elektroden zur Anwendung kamen. Die optimierten ZnO Elektroden bieten im Vergleich zu unserem Laborstandard ITO eine signifikant verbesserte Effizienz. Abschließend werden semi-transparente OPV Zellen mit freistehenden Kohlenstoff-Nanoröhrchen als transparente Top-Elektrode vorgestellt. Die daraus resultierenden Zellen zeigen sehr niedrige Leckströme und eine zufriedenstellende Stabilität. In diesem Zusammenhang wurde auch verschiedene Kombinationen von Elektrodenmaterialen als Top- und Bottom-Elektrode für semi-transparente, ITO-freie OPV Zellen untersucht. Zusammengefasst bestätigen die Resultate, dass OPV und OLEDs basierend auf alternativen Elektroden vielversprechende Eigenschaften für die praktische Anwendung in der Herstellung von effizienten, kostengünstigen, flexiblen und semi-transparenten Bauelement besitzen
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Zhang, Kelvin Hongliang. "Structural and electronic investigations of In₂O₃ nanostructures and thin films grown by molecular beam epitaxy." Thesis, University of Oxford, 2011. http://ora.ox.ac.uk/objects/uuid:de125918-b36f-47cc-b72d-2f3a27a96488.

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Transparent conducting oxides (TCOs) combine optical transparency in the visible region with a high electrical conductivity. In2O3 doped with Sn (widely, but somewhat misleadingly, known as indium tin oxide or ITO) is at present the most important TCO, with applications in liquid crystal displays, touch screen displays, organic photovoltaics and other optoelectronic devices. Surprisingly, many of its fundamental properties have been the subject of controversy or have until recently remained unknown, including even the nature and magnitude of the bandgap. The technological importance of the material and the renewed interest in its basic physics prompted the research described in this thesis. This thesis aims (i) to establish conditions for the growth of high-quality In2O3 nanostructures and thin films by oxygen plasma assisted molecular beam epitaxy and (ii) to conduct comprehensive investigations on both the surface physics of this material and its structural and electronic properties. It was demonstrated that highly ordered In2O3 nanoislands, nanorods and thin films can be grown epitaxially on (100), (110) and (111) oriented Y-stabilized ZrO2 substrates respectively. The mismatch with this substrate is -1.7%, with the epilayer under tensile strain. On the basis of ab initio density functional theory calculations, it was concluded that the striking influence of substrate orientation on the distinctive growth modes was linked to the fact that the surface energy for the (111) surface is much lower than for either polar (100) or non-polar (110) surfaces. The growth of In2O3(111) thin films was further explored on Y-ZrO2(111) substrates by optimizing the growth temperature and film thickness. Very thin In2O3 epilayers (35 nm) grew pseudomorphically under high tensile strain, caused by the 1.7% lattice mismatch with the substrate. The strain was gradually relaxed with increasing film thickness. High-quality films with a low carrier concentration (5.0  1017 cm-3) and high mobility (73 cm2V-1s-1) were obtained in the thickest films (420 nm) after strain relaxation. The bandgap of the thinnest In2O3 films was around 0.1 eV smaller than that of the bulk material, due to reduction of bonding-antibonding interactions associated with lattice expansion. The high-quality surfaces of the (111) films allowed us to investigate various aspects of the surface structural and electronic properties. The atomic structure of In2O3 (111) surface was determined using a combination of scanning tunnelling microscopy, analysis of intensity/voltage curves in low energy electron diffraction and first-principles ab initio calculations. The (111) termination has an essentially bulk terminated (1 × 1) surface structure, with minor relaxations normal to the surface. Good agreement was found between the experimental surface structure and that derived from ab initio density functional theory calculations. This work emphasises the benefits of a multi-technique approach to determination of surface structure. The electronic properties of In2O3(111) surfaces were probed by synchrotron-based photoemission spectroscopy using photons with energies ranging from the ultraviolet (6 eV) to the hard X-ray regime (6000 eV) to excite the spectra. It has been shown that In2O3 is a highly covalent material, with significant hybridization between O and In orbitals in both the valence and the conduction bands. A pronounced electron accumulation layer presents itself at the surfaces of undoped In2O3 films with very low carrier concentrations, which results from the fact the charge neutrality level of In2O3 lies well above the conduction band minimum. The pronounced electron accumulation associated with a downward band bending in the near surface region creates a confining potential well, which causes the electrons in the conduction band become quantized into two subband states, as observed by angle resolved photoemission spectra (ARPES) Fermi surface mapping. The accumulation of high density of electrons near to the surface region was found to shrink the surface band gap through many body interactions. Finally epitaxial growth of In2O3 thin films on α-Al2O3(0001) substrates was investigated. Both the stable body centred cubic phase and the metastable hexagonal corundum In2O3 phase can be stabilized as epitaxial thin films, despite large mismatches with the substrate. The growth mode involves matching small but different integral multiples of lattice planes of the In2O3 and the substrate in a domain matching epitaxial growth mode.
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Books on the topic "Transparent oxide semiconductors"

1

Barquinha, Pedro. Transparent oxide electronics: From materials to devices. Wiley, 2012.

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Symposium, MM "Transparent Conducting Oxides and Applications." Transparent conducting oxides and applications: Symposium held November 29-December 3 [2010], Boston, Massachusetts, U.S.A. Materials Research Society, 2012.

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Tōmei sankabutsu kinō zairyō to sono ōyō. Shīemushī, 2006.

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Book chapters on the topic "Transparent oxide semiconductors"

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Grundmann, Marius. "Transparent Conductive Oxide Semiconductors." In Graduate Texts in Physics. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-23880-7_20.

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Grundmann, Marius. "Transparent Conductive Oxide Semiconductors." In Graduate Texts in Physics. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13884-3_19.

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Grundmann, Marius. "Transparent Conductive Oxide Semiconductors." In Graduate Texts in Physics. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-51569-0_20.

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Fortunato, Elvira, Pedro Barquinha, Gonçalo Gonçalves, Luís Pereira, and Rodrigo Martins. "Oxide Semiconductors: From Materials to Devices." In Transparent Electronics. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch6.

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Baratto, Camilla, Elisabetta Comini, Guido Faglia, et al. "Transparent Metal Oxide Semiconductors as Gas Sensors." In Transparent Electronics. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch17.

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Hosono, Hideo. "Transparent Oxide Semiconductors: Fundamentals and Recent Progress." In Transparent Electronics. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch2.

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Carcia, Peter F. "Application of Transparent Oxide Semiconductors for Flexible Electronics." In Transparent Electronics. John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch11.

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Hosono, Hideo. "Transparent Amorphous Oxide Semiconductors for Flexible Electronics." In Handbook of Transparent Conductors. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1638-9_13.

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Brotherton, S. D. "Transparent Amorphous Oxide Semiconductor TFTs." In Introduction to Thin Film Transistors. Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00002-2_9.

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"P-Type Transparent Conductors and Semiconductors." In Transparent Oxide Electronics. John Wiley & Sons, Ltd, 2012. http://dx.doi.org/10.1002/9781119966999.ch3.

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Conference papers on the topic "Transparent oxide semiconductors"

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Lee, Dong Uk, Seon Pil Kim, Hyo Jun Lee, et al. "Study on transparent and flexible memory with metal-oxide nanocrystals." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666652.

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Herman, G. S., J. S. Rajachidambaram, M. S. Rajachidambaram, et al. "Transparent oxide semiconductors: Recent material developments and new applications." In 2011 IEEE Photonics Conference (IPC). IEEE, 2011. http://dx.doi.org/10.1109/pho.2011.6110668.

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Lee, Sungsik, Arokia Nathan, and John Robertson. "Challenges in visible wavelength detection using optically transparent oxide semiconductors." In 2012 IEEE Sensors. IEEE, 2012. http://dx.doi.org/10.1109/icsens.2012.6411471.

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Kim, Doyoung, Hyungjun Kim, Jisoon Ihm, and Hyeonsik Cheong. "Transparent conductive oxide film formed with a self textured surface for solar cell application." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666322.

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Martinez, Arturo I. "Properties of Transparent Zinc-Tin Oxide Conducting Films Prepared by Chemical Spray Pyrolysis." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994056.

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Hosono, Hideo. "Transparent amorphous oxide semiconductors: Materials design, electronic structure, and device applications." In 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999387.

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Chatterjee, Neel, Yuhang Sun та Sarah L. Swisher. "Mobility Boost in Transparent Oxide Semiconductors with High-κ Gated TFTs". У 2021 Device Research Conference (DRC). IEEE, 2021. http://dx.doi.org/10.1109/drc52342.2021.9467235.

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Kim, Byung-Jae, and Youn-Jea Kim. "A Study on the Mechanical Stability of a-IGZO Based Inverter." In ASME 2012 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/imece2012-87293.

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Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are high performance transparent oxide semiconductors (TOS) that are attractive alternatives to poly-Si TFTs, because they provide better uniformity in terms of device characteristics, such as the threshold voltage and mobility. However, the electrical performance of flexible TFTs should have mechanical robustness against substrate bending and stretching without resultant changes. In this regard, many researchers have focused on improving mechanical stability as well as electrical performance of TFTs, such as elasticity and durability under artificial conditions. In this paper, the mechanical characteristics of an a-IGZO based inverters were numerically investigated. The results were graphically depicted when the device was bent by a total of 10% of its length in the x-axis. The mechanical properties of IGZO were assumed to be similar with the zinc oxide (ZnO).
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Jeon, Hyung Min. "High electrical conducting Si-doped Ga2O3 transparent oxide semiconductor by pulsed laser deposition." In Oxide-based Materials and Devices XII, edited by Ferechteh H. Teherani, David C. Look, and David J. Rogers. SPIE, 2021. http://dx.doi.org/10.1117/12.2584820.

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Conley, J. F. "Instabilities in oxide semiconductor transparent thin film transistors." In 2009 IEEE International Integrated Reliability Workshop (IRW). IEEE, 2009. http://dx.doi.org/10.1109/irws.2009.5383033.

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