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Dissertations / Theses on the topic 'Trench'

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1

Grammatopoulou, Eleanna. "Investigating the Resource Accumulation Depth hypothesis of the sediments of the Mariana and Kermadec trenches." Thesis, University of Aberdeen, 2018. http://digitool.abdn.ac.uk:80/webclient/DeliveryManager?pid=239877.

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2

Ronaghi, Ayedin. "The Virtual Trench." Thesis, Konstfack, Institutionen för Konst (K), 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:konstfack:diva-6816.

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3

Trajković, Tatjana. "High voltage trench devices." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621251.

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4

McDowell, John. "Pipe-soil interactions in trench reinstatements." Thesis, Edinburgh Napier University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.261128.

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5

Malcolm, Christopher J. Jr. "Yarditecture : new walls for trench town." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/87545.

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Thesis: M. Arch., Massachusetts Institute of Technology, Department of Architecture, 2014.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (pages 114-115).<br>"The yard" -- the typical housing typology of low-income downtown, Jamaica where multiple households are contained within a surrounding wall. This thesis envelops itself in Trench town, Jamaica, the epicenter of what is known internationally as Jamaican culture, and to reinterpret the "yard" as a viable solution for sustainable urban growth. The housing type stems from historical times of slavery, where th
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6

Spulber, Oana. "Advanced trench gated power semiconductor devices." Thesis, De Montfort University, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.678834.

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7

Bowles, Marc W. "The trench and gate groundwater remediation system." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape15/PQDD_0024/MQ31330.pdf.

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8

Kaushik, Adithya. "Development of Cleaning Robot for Trench Drains." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573569385569481.

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9

Huang, Xuguo. "Bulk micromachined trench-coupler based microwave circuits." Thesis, Imperial College London, 2013. http://hdl.handle.net/10044/1/14494.

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Micromachining and low temperature co-fired ceramic (LTCC) technology have been widely used in modern radio-frequency (RF) and microwave systems. Both technologies provide the possibility to construct a three dimensional (3D) RF/Microwave circuits, which may have advantages in RF performance, size and power consumption when compared to conventional planar circuits. In this thesis, novel tightly-coupled microstrip and coplanar waveguide (CPW) transmission lines have been developed for LTCC bars and high-resistivity silicon (HRS) trenches fabrication processing technologies. The characteristics
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10

Green, Erik. "Stability and predicted ground movements of slurry trench excavations." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2000. http://hub.hku.hk/bib/B30431621.

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11

Parrow, Nermi Lee. "Hemin acquisition in Bartonella Quintana." Diss., [Missoula, Mont.] : The University of Montana, 2010. http://etd.lib.umt.edu/theses/available/etd-03102010-110543.

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12

LaBaw, S. Marie. "Earth pressure determination in trench rescue shoring systems." College Park, Md.: University of Maryland, 2009. http://hdl.handle.net/1903/9112.

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Thesis (Ph.D.) -- University of Maryland, College Park, 2009.<br>Thesis research directed by: Dept. of Civil and Environmental Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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13

Cuzman, Miruna Sinziana. "Trench modernism : William Orpen's career as war artist." Thesis, University of Edinburgh, 2015. http://hdl.handle.net/1842/25698.

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In response to growing German propaganda during the First World War, the British Government formed a special Propaganda Department, which used visual art as a means of boosting up the morale of civilians and British soldiers on the Front. The War Artists‟ Scheme brought into being under the auspices of the Propaganda Department in 1914 allowed some of the most promising British artists to produce memorable paintings. The works documented the numerous sites of the Western and Eastern Front. In addition, the artists employed under the scheme presented the nation with portraits of notable militar
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14

Wang, Yushu. "Thin-film trench capacitors for silicon and organic packages." Thesis, Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/42741.

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The continuous trend towards mega-functional, high-performance and ultra-miniaturized system has been driving the need for advances in novel materials with superior properties leading to thin components, high-density interconnect substrates and interconnections. Power supply and management is becoming a critical bottleneck for the advances in such mega-functional systems because power components do not scale down with the rest of the system resulting in bulky and stand-alone power modules. Amongst the power components, thin film capacitors are considered the most challenging to integrate becau
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15

Aydemir, Akin. "Deep-trench Rie Optimization For High Performance Mems Microsensors." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12608719/index.pdf.

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This thesis presents the optimization of deep reactive ion etching process (DRIE) to achieve high precision 3-dimensional integrated micro electro mechanical systems (MEMS) sensors with high aspect ratio structures. Two optimization processes have been performed to achieve 20 &amp<br>#956<br>m depth for 1 &amp<br>#956<br>m opening for a dissolved wafer process (DWP) and to achieve 100 &amp<br>#956<br>m depth for 1 &amp<br>#956<br>m opening for silicon-on-glass (SOG) process. A number of parameters affecting the etch rate and profile angle are investigated, including the step times, etch step p
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16

Phillips, R. "Ground deformation in the vicinity of a trench heading." Thesis, University of Cambridge, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382291.

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17

Huang, S. "Advanced high power semiconductor devices based on trench technology." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604696.

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MOS-gated power semiconductor devices have dominated the application areas in power electronics. Research on improving performance of these devices have always been motivated by industrial need. These devices were conventionally fabricated using DMOS technology. Trench technology, however, has now been widely adopted to enhance the behaviour of MOS-gated power semiconductor devices. The trench IGBT is very attractive for high voltage applications. This thesis first discusses the performance optimisation and design of device structure and technology parameters for high voltage trench IGBTs base
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18

Evans, J. L. "The design and manufacture of trench gated power MOSFETs." Thesis, University of Cambridge, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598877.

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During the past five years, power MOSFET technology has enjoyed an enormous growth in popularity as device performances have increased and costs have dropped, allowing the power MOSFET to become attractive to a very wide number of applications. The DMOS transistor has been the dominant power MOSFET technology for the past twenty years. However the demands placed on power MOSFET costs and performances by such markets as the automotive and communications sectors, has meant that the trench gated power MOSFET (or UMOSFET) is seen as the technology of the future. This project was funded by the Ford
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19

Wang, Jian Bing. "Modelling a proprietary trench support system in granular soils." Thesis, University of Wolverhampton, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.296136.

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20

Page, Jonathan. "Changes in lateral stress during slurry trench wall installation." Thesis, Queen Mary, University of London, 1996. http://qmro.qmul.ac.uk/xmlui/handle/123456789/1650.

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The thesis is concerned with the effects of slurry trenching (diaphragm wall installation) in an overconsolidated clay, with particular emphasis on the changes in lateral stress which occur. A review of the literature on diaphragm wall installation in stiff overconsolidated clay was carried out, with particular reference to the measurement of changes in stress and the application of finite element analyses. The problem was investigated by means of centrifuge model tests and finite element analyses. The main body of the thesis details the development and results of a series of centrifuge tests.
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21

Lee, Brian 1975. "Modeling of chemical mechanical polishing for shallow trench isolation." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/29907.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.<br>Includes bibliographical references (p. 195-201).<br>This thesis presents the nonlinear analysis, design, fabrication, and testing of an axial-gap magnetic induction micro machine, which is a two-phase planar motor in which the rotor is suspended above the stator via mechanical springs, or tethers. The micro motor is fabricated from thick layers of electroplated NiFe and copper, by our collaborators at Georgia Institute of Technology. The rotor and the stator cores are 4 mm in
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22

Gan, Terence (Terence Chihkiong) 1975. "Modeling of chemical mechanical polishing for shallow trench isolation." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/86469.

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Thesis (S.B. and M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.<br>Includes bibliographical references (p. 75-77).<br>by Terence Gan.<br>S.B.and M.Eng.
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23

Sun, Chin-Yang 1957. "Simulation of polymer-deposition controlled trench etching in silicon." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276803.

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Reactive ion etching has been used to obtain anisotropic silicon trenches with small sidewall angles. This work demonstrates that the sidewall angle can be controlled by the wafer temperature and there exists an Arrhenius-type relationship among isotropic polymer deposition rate, thickness of polymer, and sidewall angle.
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24

Sadrekarimi, Jamshid. "Drainage, pore water pressures, and slope stability in London Clay at Stag Hill, Guildford." Thesis, University of Surrey, 1988. http://epubs.surrey.ac.uk/847987/.

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Stag Hill is an example of a slope failure in London Clay. In 1964 it was proposed to develop the area, so the slope was stabilized using a drainage system and heavy buildings were constructed on piled foundations. Piezometers were also installed to establish the pore pressure pattern. In 1985 a general evaluation of the history of the failure, stabilization and development of the area was undertaken. This gave rise to the view that this area would be a very suitable place to establish a system for studying the efficiency of drainage systems. The presence of the drainage system, which initiate
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25

Crawford, J. James R. "Backfill pressures within a reinstated trench: The Gatineau field project." Thesis, University of Ottawa (Canada), 1998. http://hdl.handle.net/10393/4163.

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To the backdrop of shrinking municipal budgets and aging water distribution system infrastructure, the National Research Council of Canada undertook a joint research project with the City of Gatineau, PQ, to better understand the nature of backfill pressures acting through the reinstated trench and upon buried water pipe. This thesis first presents the general details of this joint project focusing on backfill temperature and pressure data for the period August 1994 to August 1996. These data are then analyzed leading to a description of the relationship between frost depth and backfill pressu
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26

Crawford, James R. "Backfill pressures within a reinstated trench, the Gatineau Field Project." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk2/tape17/PQDD_0001/MQ28414.pdf.

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27

Garud, Niharika Triplett Gregory Edward. "Shallow trench isolation process in microfabrication for flash (NAND) memory." Diss., Columbia, Mo. : University of Missouri-Columbia, 2008. http://hdl.handle.net/10355/5622.

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Thesis (M.S.)--University of Missouri-Columbia, 2008.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 2, 2008) Includes bibliographical references.
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28

Hellmund, Oliver [Verfasser]. "Grundlagenentwicklung einer Trench-MOS-Technologie auf hexagonalem Siliziumkarbid / Oliver Hellmund." Aachen : Shaker, 2003. http://d-nb.info/117054102X/34.

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29

Reid, Andrew J. "The long-term performance of plastic ducts in trench reinstatements." Thesis, Edinburgh Napier University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.394155.

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30

Mohammadi, Zohreh. "Design, simulation, fabrication and characterisation of 4H-SiC trench MOSFETs." Thesis, University of Warwick, 2018. http://wrap.warwick.ac.uk/109953/.

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For solid-state power devices, there exists need for a material with a higher band gap which will result in a higher critical electric field, improved power efficiency and thermal performance. This has resulted in the use of Silicon Carbide (SiC) as a serious alternative to Silicon for power devices. SiC trench MOSFETs have attracted major attention in recent years because of 1) lower on resistance by eliminating the JFET effect which exists in lateral MOSFETs, 2) higher channel density which lowers the threshold voltage and 3) reduction of the required surface area because of the vertical cha
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31

Plouffe, Alain 1963 Carleton University Dissertation Geology. "Drift prospecting and till geochemistry in Tintina Trench, southeastern Yukon." Ottawa.:, 1989.

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32

Sun, Jingmeng. "A wafer-thick trench isolation technology for automotive PIC applications /." View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20SUN.

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33

Massell, Christina Gisela. "Large scale structural variation of trench outer slopes and rises /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3064461.

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34

Williams, Kimberly Michelle. "Rifting of oceanic lithosphere at transforms and trench slope seamounts /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3071023.

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35

Smadi, Mithkal Moh'd 1960. "TRENCH ETCHING IN SILICON WITH A CONTROLLABLE SIDEWALL ANGLE (TEMPERATURE)." Thesis, The University of Arizona, 1986. http://hdl.handle.net/10150/276593.

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36

Ahmed, Nayera. "MOS Capacitor Deep Trench Isolation (CDTI) for CMOS Image Sensors." Thesis, Lyon 1, 2015. http://www.theses.fr/2015LYO10048.

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The development of high-resolution image sensors with smaller pixel sizes is facing critical issues, such as optical and electrical crosstalk, dark current and dynamic range. As part of this thesis, we addressed this issue by proposing the integration of MOS capacitor deep trench isolation (CDTI). Our studies focus on the validation of the proposal with the aim of improving performances compared to the state of the art. First, we modeled interface states Si/SiO2 and the charge in the oxide. By TCAD simulations, using our model, we were able to evaluate the main characteristics of a pixel. We h
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37

Magni, Valentina <1984&gt. "Numerical models of trench migration for lateral heterogeneous subducting plates." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2012. http://amsdottorato.unibo.it/4280/1/magni_valentina_tesi.pdf.

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The aim of this Thesis is to investigate the effect of heterogeneities within the subducting plate on the dynamics of subduction. In particular, I study the motion of the trench for oceanic and continental subduction, first, separately, and, then, together in the same system to understand how they interact. The understanding of these features is fundamental to reconstruct the evolution of complex subduction zones, such as the Central Mediterranean. For this purpose, I developed 2D and 3D numerical models of oceanic and continental subduction where the rheological, geometrical and compositiona
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Magni, Valentina <1984&gt. "Numerical models of trench migration for lateral heterogeneous subducting plates." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2012. http://amsdottorato.unibo.it/4280/.

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The aim of this Thesis is to investigate the effect of heterogeneities within the subducting plate on the dynamics of subduction. In particular, I study the motion of the trench for oceanic and continental subduction, first, separately, and, then, together in the same system to understand how they interact. The understanding of these features is fundamental to reconstruct the evolution of complex subduction zones, such as the Central Mediterranean. For this purpose, I developed 2D and 3D numerical models of oceanic and continental subduction where the rheological, geometrical and compositiona
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39

LIN, JIN-YI, and 林進益. "Trench VDMOS technology." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/55996905792728545151.

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40

Chen, Chen-chang, and 陳振昌. "The Efficiency of Wave Isolation of In-filled Trench and Sheetpiling Trench." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/rb94b6.

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碩士<br>朝陽科技大學<br>營建工程系碩士班<br>91<br>The paper is to investigate the screening effectiveness of strip foundation subjected to vertical harmonic vibration using in-filled trenches and sheetpiling trenches. Two-dimensional boundary element method in frequency domain is used in this study. The main parameters are considered in this study, including dimensions of in-filled trenches and sheetpiling trenches, such as width, depth, cross-sectional area, and position of trench, impedance ratio, density ratio, and velocity ratio of in-filled material, and the material properties of sheetpiling. To study t
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41

Chang, Jiun-Jye, and 張鈞傑. "Evaluation of Silicon Dioxide Grown on Trench Surface of Trench Gate Power MOSFET." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/57946640123049504005.

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碩士<br>國立清華大學<br>工程與系統科學系<br>87<br>Trench gate power MOSFET is the most popular product recently. It is due to the advantages of low switching loss and easy driver circuit design. Furthermore, the on-resistance of trench capacitor is reduced by the development of semiconductor fabrication technology. The conventional vertical double-diffused MOSFET’s on-resistance and packing density were limited by the horizontal channel of the device. In the trench gate MOSFET, the channel is vertical. So, it has a higher channel density than either the VMOS or DMOS structures. The trench gate powe
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42

吳明昆. "Oxide Etch in Shallow Trench Isolation." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/55852764983108910898.

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碩士<br>國立交通大學<br>工學院碩士在職專班半導體材料與製程設備學<br>94<br>Due to photo resist is widely used in pattern definition with semiconductor process, we need photo resist to protect active region when silicon dioxide inside the shallow trench isolation etch .The thesis studies the high selectivity in oxide over nitride with different process parameters split. The hard mask layer will use silicon nitride instead of resist material. The concept of mask less will diminish process flow and production cost. To increase the etch selectivity for silicon dioxide inside shallow trench isolation to silicon nitride in acti
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43

LEE, YU PIN, and 李于賓. "Trench MOSFET device design and measurement." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/10227324677796763961.

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碩士<br>明新科技大學<br>電子工程研究所<br>103<br>Abstract Power MOSFET IC has been widely applied to various fields of power circuits and automobiles. In recent years there have been considerable progresses of MOSFET in terms of high-speed switching and low ON impedance, and it has been generally believed that the future development of MOSFET will be heading towards the direction of high performance. Therefore, in this article the structure and electrical properties of Power MOSFET IC will be introduced together with the trend of future technology development. This dissertation mainly explains the design an
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44

Chang, Tien-Hao, and 張天豪. "Trench DRAM Manufacturer Developing Strategy Study." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/54145984017018195538.

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碩士<br>臺灣大學<br>商學研究所<br>95<br>This thesis using Value Net analysis and game theory as foundation, selectively examined DRAM manufacturers specialized in Trench technology of DRAM manufacturing industry, analyzed their interacting modes, in addition to possible collaboration and growth strategies. The thesis is divided into three main sections: First section concern the framework of study and literature reviews, including Value Net theory. This theory is to illustrate relative positions for Trench Group manufacturers. Characteristics of Value Net theory mainly resides at breaking out the tradit
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Heng-Tzi, Lin, and 林恆次. "Diaphragm Wall Slurry Trench Stability Analysis." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/72621417431001134460.

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46

Chen, Wen-Tsung, and 陳文聰. "Optimal Design of Trench-Gate Power MOSFET's." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/93425617005975900499.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>89<br>Abstract Power MOSFET’s are important discrete devices for a variety of power conversion applications in the voltage range below 200 V because of low conduction power loss, high input impedance, and high switching speed. Due to these advantages, the effort to improve the power MOSFET’s performance operating above 30 V is the goal in this thesis. We use Tsuprem4 process simulator and MEDICI device simulator to help designing the device. To enhance the process toleration, we qualify the device in 35 V and obtain the optimal process parameters and ch
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CAI, CE-XIONG, and 蔡澈雄. "A study of trench capacitor for VLSI." Thesis, 1987. http://ndltd.ncl.edu.tw/handle/mn3c7v.

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48

Chien-YangKao and 高健洋. "Settlement Analysis of Backfill Materialsin Road Trench." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/45641603715169586087.

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碩士<br>國立成功大學<br>土木工程學系專班<br>98<br>Backfill materialsin road trench easily lead to future road subsidence and uneven phenomenon, not easy to achieve the desired results and result in increased costs to maintain. In order to resolve the complications encountered from the ditch channels construction projects, this study research is using four different types of materials called Controlled Low Strength Material (CLSM) type One (I) to Four (IV) with different mixing combination types to complete refilling ditch channels construction project to evaluate the observation data, financial welfares, and
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sun, Luen-Chain, and 孫綸謙. "The Fabrication of Trench Gated Power MOSFET." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/96065107278720248066.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>88<br>The trench MOSFET’s are now widely used as the power MOSFET’s. Their on resistances have been steadily reduces by scaling down the cell pitch. However, in the typical process of conventional trench MOSFET,6~7mask layers are needed, including field oxide、trench、n+ implantation、polysilicon gate、contact and metal define. So it has been discussed with emphasis on the reduction of on-resistances by scaling down the cell pitch and the cost-effective by reducing the number of mask layers. In this dissertation, a new and simplified process for fabricating a
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Yu, Hsin-Lung, and 于鑫龍. "Study of Trench MOS Barrier Schottky Rectifier." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/83730016523016465709.

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碩士<br>國立臺灣科技大學<br>電子工程系<br>98<br>Improved barrier controlled power Schottky rectifiers are of interest for application in low-voltage switching mode power supplies for integrated circuits. For these applications, it is desirable to have rectifiers with very low forward drop and high switching speed. The forward voltage drop of a Schottky rectifier can be reduced by decreasing the Schottky barrier height. Unfortunately, a low barrier height results in a severe increase in leakage current and reduction in maximum operating temperature. Further, Schottky power rectifiers fabricated with barrier h
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