Relevant bibliographies by topics / Trimethylgallium (TMG)

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  1. Journal articles
  2. Dissertations / Theses
  3. Conference papers

Academic literature on the topic 'Trimethylgallium (TMG)'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Trimethylgallium (TMG)"

1

Sukhasena, Seckson, and P. Pungboon Pansila. "Computational Prediction of Trimethylgallium Adsorption on Si(100)(2×1) in Atomic Layer Deposition." Key Engineering Materials 759 (January 2018): 43–47. http://dx.doi.org/10.4028/www.scientific.net/kem.759.43.

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The computational prediction of the surface adsorption in atomic layer deposition of gallium oxide by using trimethylgallium (TMG) is investigated. One dimer of Si (100)(2×1) is used as the substrate. The hydroxyl radicals are used to produce the absorption sites for the TMG adsorbed surface as OH–Si–Si–OH surface species. Two sites adsorption of the TMG on the surface are predicted. The geometry, vibrational frequency, and free energy of –OH adsorption sites and TMG adsorption are calculated by Gaussian 09 package by using standard B3LYP method. The results showed that TMG is possible to adso
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2

Choi, S. W., K. J. Bachmann, and G. Lucovsky. "Growth kinetics and characterizations of gallium nitride thin films by remote PECVD." Journal of Materials Research 8, no. 4 (1993): 847–54. http://dx.doi.org/10.1557/jmr.1993.0847.

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Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. X-ray d
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Takahashi, Kazuki, Kanji Yasui, Maki Suemitsu, et al. "Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method." Advanced Materials Research 11-12 (February 2006): 261–64. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.261.

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Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 120
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Sekiguchi, K., H. Shirakawa, Y. Yamamoto, et al. "First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN." Journal of Crystal Growth 468 (June 2017): 950–53. http://dx.doi.org/10.1016/j.jcrysgro.2016.12.044.

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5

Díaz-Reyes, J., Miguel Galvan-Arellano, and R. Peña-Sierra. "Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System." Materials Science Forum 587-588 (June 2008): 283–87. http://dx.doi.org/10.4028/www.scientific.net/msf.587-588.283.

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This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was u
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Tang, Wen Hui, Yi Jia, Bo Cheng Zhang, et al. "Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature." Key Engineering Materials 727 (January 2017): 907–14. http://dx.doi.org/10.4028/www.scientific.net/kem.727.907.

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Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalli
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7

Austin, Aaron J., Elena Echeverria, Phadindra Wagle, et al. "High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures." Nanomaterials 10, no. 12 (2020): 2434. http://dx.doi.org/10.3390/nano10122434.

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Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-
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8

Lee, F., T. R. Gow, R. Lin, A. L. Backman, D. Lubben, and R. I. Masel. "The Decomposition of Trimethylgallium and Trimethylaluminum on Si(100)." MRS Proceedings 131 (1988). http://dx.doi.org/10.1557/proc-131-339.

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ABSTRACTThe decomposition of trimethylgallium (TMG) and trimethylaluminum (TMA) on Si(100) is studied by TPD, XPS, and EELS. It is found that the decomposition of TMG is largely an intramolecular process. First one of the methyl groups in the TMG reacts with a hydrogen in another methyl group liberating methane. This leaves a CH2 group bound to the gallium which is seen clearly in EELS. Subsequently, another hydrogen reacts with a methyl group producing additional methane. This leaves a gallium atom and a CH group on the surface. Hydrogen desorbs, while carbon is incorporated into the growing
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9

Park, Seong-Ju, Jeong-Rae Ro, Jae-Ki Sim, Jeong Sook Ha, and El-Hang Lee. "The Role of Unprecracked Hydride Species Adsorbed on The GaAs(100) in The Growth of GaAs by Ultrahigh Vacuum Chemical Vapor Deposition Using Trimethylgallium and Triethylgallium." MRS Proceedings 334 (1993). http://dx.doi.org/10.1557/proc-334-183.

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AbstractsWe have grown GaAs epilayers by ultrahigh vacuum chemical vapor deposition(UHVCVD) using adsorbed hydrides and metalorganic compounds via a surface decomposition process. This result indicates that unprecracked arsine(AsH3) can be used in chemical beam epitaxy(CBE) and that a new hydride source with a low decomposition temperature, monoethylarsine(MEAs) can replace the precracked AsH3 source in CBE. The impurity concentrations in GaAs grown with trimethylgallium(TMG) and triethylgallium(TEG) were found to be very sensitve to growth temperature. It was also found that the uptake of car
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10

Thon, A., and T. F. Kuech. "Gas Phase Adduct Reactions in MOCVD Growth of GaN." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-97.

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ABSTRACTGas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of insitu mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct - derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.
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Dissertations / Theses on the topic "Trimethylgallium (TMG)"

1

Rönnby, Karl. "Quantum Chemical Feasibility Study of Methylamines as Nitrogen Precursors in Chemical Vapor Deposition." Thesis, Linköpings universitet, Kemi, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-132812.

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The possibility of using methylamines instead of ammonia as a nitrogen precursor for the CVD of nitrides is studied using quantum chemical computations of reaction energies: reaction electronic energy (Δ𝑟𝐸𝑒𝑙𝑒𝑐) reaction enthalpy (Δ𝑟𝐻) and reaction free energy (Δ𝑟𝐺). The reaction energies were calculated for three types of reactions: Uni- and bimolecular decomposition to more reactive nitrogen species, adduct forming with trimethylgallium (TMG) and trimethylaluminum (TMA) followed by a release of methane or ethane and surface adsorption to gallium nitride for both the unreacted ammonia or methy
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Conference papers on the topic "Trimethylgallium (TMG)"

1

Meng, Jiandong, and Yogesh Jaluria. "Numerical Simulation of GaN Growth in a MOCVD Process." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-63040.

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This paper describes a model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor. With trimethylgallium (TMGa) and ammonia (NH3) carried by hydrogen (H2) as precursors, the flow, temperature and concentration profiles are predicted by numerical modeling, which is performed using a commercial CFD software package CFD-ACE+. The growth rate is predicted based on detailed reaction mechanisms given in the literature, and related studies are carried out to verify the reliability and adaptability of the chosen chemical kinetics. A detailed
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