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Journal articles on the topic 'Trimethylgallium (TMG)'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Sukhasena, Seckson, and P. Pungboon Pansila. "Computational Prediction of Trimethylgallium Adsorption on Si(100)(2×1) in Atomic Layer Deposition." Key Engineering Materials 759 (January 2018): 43–47. http://dx.doi.org/10.4028/www.scientific.net/kem.759.43.

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The computational prediction of the surface adsorption in atomic layer deposition of gallium oxide by using trimethylgallium (TMG) is investigated. One dimer of Si (100)(2×1) is used as the substrate. The hydroxyl radicals are used to produce the absorption sites for the TMG adsorbed surface as OH–Si–Si–OH surface species. Two sites adsorption of the TMG on the surface are predicted. The geometry, vibrational frequency, and free energy of –OH adsorption sites and TMG adsorption are calculated by Gaussian 09 package by using standard B3LYP method. The results showed that TMG is possible to adso

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2

Choi, S. W., K. J. Bachmann, and G. Lucovsky. "Growth kinetics and characterizations of gallium nitride thin films by remote PECVD." Journal of Materials Research 8, no. 4 (1993): 847–54. http://dx.doi.org/10.1557/jmr.1993.0847.

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Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. X-ray d

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3

Takahashi, Kazuki, Kanji Yasui, Maki Suemitsu, et al. "Epitaxial Growth of Hexagonal GaN Films on SiC/Si Substrates by Hot-Mesh CVD Method." Advanced Materials Research 11-12 (February 2006): 261–64. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.261.

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Gallium nitride (GaN) films were grown on SiC/Si(111) substrates by hot-mesh chemical vapor deposition (CVD) using trimethylgallium (TMG) and ammonia (NH3). A SiC buffer layer was formed by carbonization on the Si(111) substrates using propane (C3H8). GaN epitaxial films were grown on the SiC layer by the reaction between NHx radicals generated on a tungsten hot-mesh surface and TMG molecules. From the X-ray diffraction pattern, the GaN epitaxial films grown by the two- or three-step growth technique at the substrate temperatures of 600°C and 800°C to 1000°C and the hot-mesh temperature of 120

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4

Sekiguchi, K., H. Shirakawa, Y. Yamamoto, et al. "First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN." Journal of Crystal Growth 468 (June 2017): 950–53. http://dx.doi.org/10.1016/j.jcrysgro.2016.12.044.

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5

Díaz-Reyes, J., Miguel Galvan-Arellano, and R. Peña-Sierra. "Concentration-Dependent Photoluminescence and Raman of p-Type GaAs Grown in a Metallic-Arsenic-Based-MOCVD System." Materials Science Forum 587-588 (June 2008): 283–87. http://dx.doi.org/10.4028/www.scientific.net/msf.587-588.283.

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This work presents the optical and structural characterization of p-type GaAs epilayers. The gallium precursor was the organometallic compound trimethylgallium (TMG). The influence of the doping in the optical and structural properties of the GaAs layers has been studied by photoluminescence (PL) and Raman dispersion measurements. The range of analyzed hole concentration was from 1017 to 1019 cm-3 as measured by the Hall-van der Pauw method. For carrying out doping p-type, it was necessary to modify the hydrogen activity in the growth atmosphere with the control of a H2+N2 mixture, which was u

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6

Tang, Wen Hui, Yi Jia, Bo Cheng Zhang, et al. "Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature." Key Engineering Materials 727 (January 2017): 907–14. http://dx.doi.org/10.4028/www.scientific.net/kem.727.907.

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Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH3, N2, N2/H2 gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalli

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7

Austin, Aaron J., Elena Echeverria, Phadindra Wagle, et al. "High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures." Nanomaterials 10, no. 12 (2020): 2434. http://dx.doi.org/10.3390/nano10122434.

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Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-

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8

Lee, F., T. R. Gow, R. Lin, A. L. Backman, D. Lubben, and R. I. Masel. "The Decomposition of Trimethylgallium and Trimethylaluminum on Si(100)." MRS Proceedings 131 (1988). http://dx.doi.org/10.1557/proc-131-339.

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ABSTRACTThe decomposition of trimethylgallium (TMG) and trimethylaluminum (TMA) on Si(100) is studied by TPD, XPS, and EELS. It is found that the decomposition of TMG is largely an intramolecular process. First one of the methyl groups in the TMG reacts with a hydrogen in another methyl group liberating methane. This leaves a CH2 group bound to the gallium which is seen clearly in EELS. Subsequently, another hydrogen reacts with a methyl group producing additional methane. This leaves a gallium atom and a CH group on the surface. Hydrogen desorbs, while carbon is incorporated into the growing

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9

Park, Seong-Ju, Jeong-Rae Ro, Jae-Ki Sim, Jeong Sook Ha, and El-Hang Lee. "The Role of Unprecracked Hydride Species Adsorbed on The GaAs(100) in The Growth of GaAs by Ultrahigh Vacuum Chemical Vapor Deposition Using Trimethylgallium and Triethylgallium." MRS Proceedings 334 (1993). http://dx.doi.org/10.1557/proc-334-183.

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AbstractsWe have grown GaAs epilayers by ultrahigh vacuum chemical vapor deposition(UHVCVD) using adsorbed hydrides and metalorganic compounds via a surface decomposition process. This result indicates that unprecracked arsine(AsH3) can be used in chemical beam epitaxy(CBE) and that a new hydride source with a low decomposition temperature, monoethylarsine(MEAs) can replace the precracked AsH3 source in CBE. The impurity concentrations in GaAs grown with trimethylgallium(TMG) and triethylgallium(TEG) were found to be very sensitve to growth temperature. It was also found that the uptake of car

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10

Thon, A., and T. F. Kuech. "Gas Phase Adduct Reactions in MOCVD Growth of GaN." MRS Proceedings 395 (1995). http://dx.doi.org/10.1557/proc-395-97.

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ABSTRACTGas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of insitu mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct - derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.

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11

Doi, Atsutoshi, Yoshinobu Aoyagi, and Susumu Namba. "Stepwise Monolayer Growth of GaAs by Pulsed Laser Metal Organic Vapor Phase Epitaxy." MRS Proceedings 75 (1986). http://dx.doi.org/10.1557/proc-75-217.

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AbstractAtomic layer epitaxy (ALE) of GaAs by pulsed laser metal organic vapor phase epitaxy is reported. Suspension of Ga deposition at 100% coverage is an essential part of the growth mechanism for ideal ALE. This is achieved by a photo-catalytic decomposition of adsorbed trimethylgallium (TMG). Selective enhancement of the decomposition rate for adsorbed TMG on As, with no enhancement for that on Ga is the main reason for suspension of Ga deposition at 100% coverage. A decomposition rate for TMG on As which is about 100 times faster than that on Ga is estimated from a comparison between the

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12

Aspnes, D. E., R. Bhat, E. Colas, M. A. Koza, V. G. Keramidas, and A. A. Studna. "Kinetic Limits to Growth on GaAs by Omcvd." MRS Proceedings 145 (1989). http://dx.doi.org/10.1557/proc-145-99.

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AbstractUsing a real-time surface probe with 0.01 monolayer (ML) sensitivity, we determine the rate-limiting steps for atmospheric-pressure, alternating-layer-epitaxy OMCVD growth on (001) and (110) GaAs with trimethylgallium and arsine sources. The reaction of TMG with AsH3- saturated (001) GaAs is limited by a competition between decomposition (at 39 kcal/mole) and desorption of TMG chemisorbed (at −26 kcal/mole) via an excluded-volume mechanism. The reaction of AsH3with TMG-saturated (001) GaAs shows an initial fast transient followed by a slower recovery. On (110) GaAs, TMG reacts essentia

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13

Löckerath, R., H. J. Koss, P. Tommack, W. Richter, and P. Balk. "Coherent Anti-Stokes Raman Scattering Measurements of Group V Hydride and Trimethylgallium Decomposition in Organometallic Vapor Phase Epitaxy." MRS Proceedings 131 (1988). http://dx.doi.org/10.1557/proc-131-91.

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ABSTRACTThe thermal decomposition of AsH3 and TMG is measured insitu under different experimental conditions. Simultaneously the production of H2, CH4 and C2H6 is observed. The data indicate a situation where AsH3 is only partially decomposed at the GaAs surface. The hydrogen released removes additional CH3 groups from the trimethyl-gallium (TMG) molecule, enhances the decomposition of TMG, and thereby forms methane.

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14

Demchuk, A., J. Porter, and B. Koplitz. "Toward Growing III-V Clusters with Metalorganic Precursors." MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-45.

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ABSTRACTThe present work reports on the formation of GaN-containing clusters from metalorganic precursors by combining pulsed laser photolysis and pulsed nozzle methods. Ammonia (NH3) and triethylgallium (C2H5)3Ga (TEG) or trimethylgallium (CH3)3Ga (TMG) with He, Ar, or N2 as the carrier gas are introduced into a high vacuum chamber via a specialized dual pulsed nozzle source. The light from an ArF excimer laser (193 nm, 23 ns FWHM) is focused into the mixing and reaction region of the nozzle source, and the products are then mass analyzed with a quadrupole mass spectrometer. Efficient laser-a

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15

Omstead, Thomas R., Penny M. Van Sickle, and Klavs F. Jensen. "Gas Phase and Surface Reactions in Mocvd of GaAs from Triethylgallium, Trimethylgallium, and Organometallic Arsenic Precursors." MRS Proceedings 131 (1988). http://dx.doi.org/10.1557/proc-131-103.

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ABSTRACTThe growth of GaAs from triethylgallium (TEG) and trimethylgallium (TMG) with tertiarybutylarsine (tBAs), triethylarsenic (TEAs), and trimethylarsenic (TMAs), has been investigated by using a reactor equipped with a recording microbalance for in situ rate measurements. Rate data show that the growth with these precursors is dominated by the formation of adduct compounds in the gas lines, by adduct related parasitic gas phase reactions in the heated zone, and by the surface reactions. A model is proposed for the competition between deposition reactions and the parasitic gas phase reacti

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16

Thon, A., S. A. Safvi, and T. F. Kuech. "High Temperature Gas Phases Reactions Of Trimethylgallium with Ammonia and Trimethylamine." MRS Proceedings 423 (1996). http://dx.doi.org/10.1557/proc-423-445.

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AbstractThe use of trimethylgallium-trimethylamine (TMG:TMN) adduct as alternative cation precursor for MOVPE of GaN was studied by means of in-situ mass spectroscopy in an isothermal flow tube reactor. The temperature, pressure and reaction time were chosen to emulate the gas phase environment typical of the metal-organic vapor phase: epitaxy (MOVPE) of GaN. Dynamic changes in the mass spectra are reported for the gas phase reactions between trimethylgallium (TMG) and TMN in hydrogen (H2/D2) and ammonia (NH3/ND3) ambients. Evidence presented for the high temperature TMG:TMN adduct formation,

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17

Chilukuri, R. K., Suian Zhang, E. Chen, R. F. Davis, and H. H. Lamb. "Selected Energy Epitaxy of Gallium Nitride." MRS Proceedings 449 (1996). http://dx.doi.org/10.1557/proc-449-355.

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ABSTRACTA new apparatus for III-V nitride growth by selected energy epitaxy (SEE) is described. The multi-chamber system comprises a doubly differentially pumped molecular beam source, UHV-compatible growth chamber, x-ray photoelectron spectroscopy (XPS) chamber, UHV transfer line, and loadlock. The growth chamber is equipped for in situ quadrupole mass spectrometry and reflection high-energy electron diffraction (RHEED). Preliminary results of GaN SEE using hyperthermal beams of trimethylgallium (TMG) and ammonia (NH3) are presented.

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18

Salim, Sateria, K. F. Jensen, and R. D. Driver. "Fiber Optics-Based Fourier Transform Infrared Spectroscopy for in-Situ Concentration Monitoring in OMCVD." MRS Proceedings 324 (1993). http://dx.doi.org/10.1557/proc-324-241.

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AbstractFiber-based Fourier transform infrared spectroscopy for remote in-situ monitoring of organometallic delivery in organometallic chemical vapor deposition (OMCVD) is presented. The measurement is based on infrared absorbance of the organometallic reagent in a short single pass gas cell placed in the gas delivery line of an OMCVD system. The performance of the set-up is demonstrated for monitoring concentration transients during the delivery of two common OMCVD precursors, trimethylgallium (TMG) and trimethylindium (TMI). The time to reach saturation is shown to be faster for a TMG bubble

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19

Roberts, J. C., B. F. Moody, P. Barletta, et al. "Growth of High Nitrogen Content GaAsN by Metalorganic Chemical Vapor Deposition." MRS Proceedings 692 (2001). http://dx.doi.org/10.1557/proc-692-h1.9.1.

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AbstractThe incorporation of a high percentage of nitrogen in the GaAs lattice has been the subject of recent interest to reduce the bandgap while maintaining the nearly lattice matched condition to GaAs. We will report on the metalorganic chemical vapor deposition (MOCVD) of GaAsN using trimethylgallium (TMG), tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy) organometallic sources in a hydrogen-free carrier gas. A nitrogen concentration as high as ∼8% in GaAsN was achieved. The effect of nitrogen concentration on the structural, optical and surface properties of GaAsN films will be disc

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20

Lee, Ki Hoon, Kasif Teker, Ming Zhang, Juyong Chung, and Pirouz Pirouz. "Effect of TMG Addition on the Epitaxial Growth of 3C-SiC on Si(100) and Si(111) Using Hexamethyldisilane." MRS Proceedings 640 (2000). http://dx.doi.org/10.1557/proc-640-h5.11.

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ABSTRACTEpitaxial and crack-free 3C-SiC film was successfully grown on Si(100)/(111) by a one step process without separate nucleation or carbonization steps at a low temperature of 1200°C by MOVPE. The growth was achieved by using hexamethyldisilane (HMDS) with the addition of a small amount of trimethylgallium (TMG) (0.5 sccm) with dilute hydrogen (12% H2 + Ar) as a carrier gas. Without the addition of TMG during growth, epitaxial growth of SiC on Si was only possible at temperatures above 1300°C following a nucleation step at 1200∼1250°C. After growth, all the films were analyzed by using c

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21

Colas, E., D. E. Aspnes, R. Bhat, A. A. Studna, M. A. Koza, and V. G. Keramidas. "Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces." MRS Proceedings 144 (1988). http://dx.doi.org/10.1557/proc-144-103.

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ABSTRACTReflectance-difference spectroscopy (RDS) is a recently developed optical technique that allows to monitor chemical and structural changes at a growing semiconductor surface, in-situ and in real-time. This technique was applied recently to organometallic chemical vapor deposition (OMCVD) on a [100] GaAs growth surface. The results show that submonolayer coverage of reacted species can be followed by this technique, which provided unique insights into the microscopic growth mechanisms. The time, temperature and pressure dependences of surface coverage show that OMCVD growth is controlle

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22

Qi, Ming, Jinsheng Luo, J. Shirakashi, et al. "Heavily Carbon Doped P-Type GaAs/InGaAs Strained-Layer Superlattices Grown by Mombe." MRS Proceedings 281 (1992). http://dx.doi.org/10.1557/proc-281-167.

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ABSTRACTHeavily carbon doped ρ-type GaAs/In0.3Ga0.7 As strained-layer superlattices (SLSs) with hole concentrations as high as 1 × 1020 / cm3 were successfully grown for the first time by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic and solid indium. The single quantum well (SQW) and multiple quantum well (MQW) structures with different well width from 2 to 16nm were also designed to analyse the strain relaxation. The experimental results show that the SLS structures made of heavily carbon doped ρ—type GaAs and InGaAs have both of high hole concentrat

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23

Biwa, Goshi, Hiroyuki Yaguchi, Kentaro Onabe, and Yasuhiro Shiraki. "MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP." MRS Proceedings 482 (1997). http://dx.doi.org/10.1557/proc-482-173.

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AbstractGaP1-x-yAsyNx. (x ∼,2.3%, 0< y <19%) quaternary alloy semiconductor films on GaP substrates have been successfully grown by metalorganic vapor phase epitaxy (MOVPE). With the fixed supplies of trimethylgallium(TMG), AsH3 and dimethylhydrazine(DMHy) during the growth, the As concentration in the solid increased with increasing AsH3 supply, while the N concentration was almost unaffected. It has been demonstrated that the crystalline quality of the alloy films is much improved with the close lattice-matching to the GaP substrate, giving a superior surface morphology without any cro

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24

"Surface reconstruction of GaAs (001) during OMCVD growth." Philosophical Transactions of the Royal Society of London. Series A: Physical and Engineering Sciences 344, no. 1673 (1993): 443–52. http://dx.doi.org/10.1098/rsta.1993.0099.

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Surface reconstruction of GaAs (001) during organometallic chemical vapour deposition (OMCVD) growth has been investigated with reflectance-difference spectroscopy (RDS). RD spectra reveal that surface reconstructions similar or identical to (4 x 2), (2 x 4), and c (4 x 4) that occur on surface prepared by molecular beam epitaxy (MBE) in ultrahigh vacuum (UHV) occur even in atmospheric pressure OMCVD growth environments. Based on the RDS database we established on static surfaces in UHV , we studied the structure of surfaces under both static and dynamic conditions in non-UHV ambients. We find

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25

Safvi, S. A., J. M. Redwing, A. Thon, J. S. Flynn, M. A. Tischler, and T. F. Kuech. "MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization." MRS Proceedings 449 (1996). http://dx.doi.org/10.1557/proc-449-101.

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ABSTRACTThe results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metalorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and comp

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26

Demchuk, Alexander, Michael Lynch, Steven Simpson, and Brent Koplitz. "Low Temperature Laser-Assisted Gas Phase Reactivity of TMGa with NH3 and Oxygen-Containing Compounds (H2O, CH3OH, O(CH3)2) in Constrained Pulsed Expansions." MRS Proceedings 743 (2002). http://dx.doi.org/10.1557/proc-743-l3.7.

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ABSTRACTThe present work reports on the study of III-V gas phase reactivity in constrained gas pulse expansions of trimethylgallium (TMGa) and oxygen derivative compounds (H2O, CH3OH, O(CH3)2) with and without ammonia. The precursors are introduced separately into a high vacuum chamber via a multipulsed gas nozzle assembly. The gas mixtures are then exposed to a UV pulse from an ArF excimer laser (λ=193 nm) and the products are mass analyzed with a quadrupole mass spectrometer. The efficient laser-assisted growth of Ga-O-containing clusters in the form of [(CH3)2GaOR] x, where R is H or CH3, h

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27

Vvedensky, D. D., T. Shitarat, P. Smilauer, T. Kaneko, and A. Zangwill. "From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD." MRS Proceedings 312 (1993). http://dx.doi.org/10.1557/proc-312-3.

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AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homo

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28

Yoshida, Seikoh, Yoshiteru Itoh, and Junjiroh Kikawa. "Nitride-Rich Hexagonal GaNP Growth Using Metalorganic Chemical Vapor Deposition." MRS Proceedings 639 (2000). http://dx.doi.org/10.1557/proc-639-g2.2.

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ABSTRACTThe growth of GaNP using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD) was carried out for the fabrication of a light-emitting diode (LED). We used an Ar-F laser in order to decompose the source gases at lower temperatures. Trimethylgallium (TMG), ammonia (NH3) and tertialybuthylphosphine (TBP) were used for the growth. GaNP growth was carried out at different temperatures. After that, annealing was carried out at 1273-1373 K to improve the crystal quality.As a result, N-rich GaNP could be grown at 1123-1223 K. The surface morphologies of GaNP were improved when the

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29

Lim, K. Y., K. J. Lee, C. I. Park, et al. "Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate Layer." MRS Proceedings 595 (1999). http://dx.doi.org/10.1557/proc-595-f99w3.24.

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AbstractGaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using a

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30

Shastry, S. K. "A Theoretical Study of Condensation Processes in OMCVD of GaAs." MRS Proceedings 94 (1987). http://dx.doi.org/10.1557/proc-94-267.

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Kinetics of epitaxial growth of GaAs from trimethylgallium (TMG) and arsine in organometallic chemical vapor deposition (OMCVD) have been suggested in the past to occur according to the Langmuir-Hinshelwood (L-H) or Langmuir-Rideal (L-R) mechanism [1–3], where competitive chemisorption of the Ga- and As-containing species is assumed. In contrast, formation of sp3 bonds on the GaAs growth front suggests that the Ga-containing species are less likely to chemisorb onto Assites, while the As-containing species are less likely to chemisorb onto Ga-sites. In addition, an analysis of probable chemica

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31

Jumaah, Omar Dhannoon, and Yogesh Jaluria. "Experimental Study of the Effect of Precursor Composition on the Microstructure of Gallium Nitride Thin Films Grown by the MOCVD Process." Journal of Heat Transfer 143, no. 10 (2021). http://dx.doi.org/10.1115/1.4051672.

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Abstract Chemical vapor deposition (CVD) is a widely used manufacturing process for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride that are employed in the fabrication of electronic and optical devices. Gallium nitride (GaN) thin films are attractive materials for manufacturing optoelectronic device applications due to their wide band gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of the thin films. The metal-organic chemical vapor deposition (MOCVD) process, which uses compounds tha

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