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Relevant bibliographies by topics / Tungstene hexacarbonyle

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Academic literature on the topic 'Tungstene hexacarbonyle'

Author: Grafiati

Published: 4 June 2021

Last updated: 17 February 2022

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Journal articles on the topic "Tungstene hexacarbonyle"

1

Neustetter, Michael, Andreas Mauracher, Paulo Limão-Vieira, and Stephan Denifl. "Complete ligand loss in electron ionization of the weakly bound organometallic tungsten hexacarbonyl dimer." Physical Chemistry Chemical Physics 18, no. 15 (2016): 9893–96. http://dx.doi.org/10.1039/c6cp00558f.

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Кремлев, К. В., А. М. Объедков, Н. М. Семенов, Б. С. Каверин, С. Ю. Кетков, И. В. Вилков, П. В. Андреев, С. А. Гусев, and А. В. Аборкин. "Cинтез гибридных материалов на основе многостенных углеродных нанотрубок, декорированных нанопокрытиями WC-=SUB=-1-x-=/SUB=- различной морфологии." Письма в журнал технической физики 45, no. 7 (2019): 41. http://dx.doi.org/10.21883/pjtf.2019.07.47537.17644.

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AbstractNew hybrid materials based on multiwalled carbon nanotubes (MWCNTs) with a nonstoichiometric tungsten carbide coating (WC_1 –_ x /MWCNTs) were synthesized by metalorganic chemical vapor deposition with tungsten hexacarbonyl used as a precursor. The mass ratio of precursors was varied to obtain nonstoichiometric tungsten carbide coatings of different morphologies ranging from spatially separated nanoparticles to a uniform ~300-nm-thick coating with a granular structure.

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3

Nikoobakht, Behnam. "2T2g ← 1A1g photo-electron spectrum of octahedral tungsten hexacarbonyl." Physical Chemistry Chemical Physics 18, no. 48 (2016): 33357–68. http://dx.doi.org/10.1039/c6cp06538d.

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Zhao, Xixia, Qian Di, Xiaotong Wu, Yubin Liu, Yikang Yu, Guijuan Wei, Jun Zhang, and Zewei Quan. "Mild synthesis of monodisperse tin nanocrystals and tin chalcogenide hollow nanostructures." Chemical Communications 53, no. 80 (2017): 11001–4. http://dx.doi.org/10.1039/c7cc06729a.

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A mild but robust synthetic strategy was developed to synthesize monodisperse Sn nanocrystals with tunable size by using tungsten hexacarbonyl as the reducing agent, and novel tin chalcogenide nanostructures have also been prepared using Sn nanocrystals as templates.

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Lucas, C. Robert. "Thioether complexes of tungsten hexacarbonyl." Canadian Journal of Chemistry 64, no. 9 (September 1, 1986): 1758–63. http://dx.doi.org/10.1139/v86-290.

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The preparation of a series of organic and organometallic thioethers R3MSR′ (M = C, Si, Ge, or Sn) is reported. From these, several new compounds of type 1 are synthesized, some of which contain para-substituted aryl functions for R′ and R. In hexane solution in the carbonyl stretching region of the ir and in the uv there is evidence for a degree of multiple bonding, at least in the M—S—W—CO portion of these molecules. Multiple bonding extending into aromatic R or R′ is small or non-existent and cannot be assessed precisely because of spontaneous decomposition of the complexes. All the complexes undergo a thermally initiated decomposition, the ease of which depends on the nature of R, R′, and M. The unusual W(I) thiolate cis-[(CO)4W-μ-SR′]2 is the thermal decomposition product.

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PARK, BYOUNGTAE, and KIJUNG YONG. "SYNTHESIS AND CHARACTERIZATION OF TUNGSTEN OXIDE NANORODS." Surface Review and Letters 12, no. 05n06 (October 2005): 745–48. http://dx.doi.org/10.1142/s0218625x0500761x.

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A new method is developed to obtain crystalline nanorods of WO 3 using tungsten organometallic compound, tungsten hexacarbonyl, at a low temperature of around 700°C. The diameters of the nanorods were in the range of 20–50 nm, and their lengths were up to several micrometers. The WO 3 nanorods had a clean surface without any particles. HRTEM and SAED pattern analysis results showed that the synthesized WO 3 nanorods had a monoclinic single-crystalline structure.

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Glezen, Marsha M., and Charles D. Jonah. "Pulse radiolysis of chromium hexacarbonyl and tungsten hexacarbonyl in alkane solution." Journal of Physical Chemistry 95, no. 12 (June 1991): 4736–41. http://dx.doi.org/10.1021/j100165a027.

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8

Yang, Zhan, Masahiro Nakajima, Yasuhito Ode, and Toshio Fukuda. "Tungsten/Platinum Hybrid Nanowire Growth via Field Emission Using Nanorobotic Manipulation." Journal of Nanotechnology 2011 (2011): 1–8. http://dx.doi.org/10.1155/2011/386582.

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This paper reports tungsten-platinum hybrid nanowire growth via field emission, based on nanorobotic manipulation within a field emission scanning electron microscope (FESEM). A multiwalled carbon nanotube (MWCNT) was used as the emitter, and a tungsten probe was used as the anode at the counterposition, by way of nanomanipulation. By independently employing trimethylcyclopentadienyl platinum (CpPtMe3) and tungsten hexacarbonyl (W(CO)6) as precursors, the platinum nanowire grew on the tip of the MWCNT emitter. Tungsten nanowires then grew on the tip of the platinum nanowire. The hybrid nanowire length wascontrolled by nanomanipulation. Their purity was evaluated using energy-dispersive X-ray spectroscopy (EDS). Thus, it is possible to fabricate various metallic hybrid nanowires by changing the precursor materials. Hybrid nanowires have various applications in nanoelectronics, nanosensor devices, and nanomechanical systems.

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Magnusson, Martin H., Knut Deppert, and Jan-Olle Malm. "Single-crystalline Tungsten Nanoparticles Produced by Thermal Decomposition of Tungsten Hexacarbonyl." Journal of Materials Research 15, no. 7 (July 2000): 1564–69. http://dx.doi.org/10.1557/jmr.2000.0224.

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Nanometer-sized particles of W are of interest in semiconductor device research, where such particles may store electrons inside heteroepitaxially defined structures. In this paper, we present results concerning W particles produced by thermal decomposition of tungsten hexacarbonyl. By the described method, it was possible to produce size-selected, single-crystalline W particles in the size range between 15 and 60 nm. The sintering behavior of the particles was studied between ambient temperatures and 1900 °C. The particle morphology and structure were examined with high-resolution transmission electron microscopy and electron diffraction techniques. Particles sintered at the highest temperatures typically were single crystals, with well-developed facets. Some problems concerning a yield reducing charging mechanism are discussed.

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Morkan, İ. Amour, and A. Uztetik-Morkan. "Photochemical Synthesis and Identification of Tetracarbonyl-bis(olefin)metal(0) Complexes of Group VI B Elements." Zeitschrift für Naturforschung B 55, no. 12 (December 1, 2000): 1153–56. http://dx.doi.org/10.1515/znb-2000-1208.

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Photolysis of hexacarbonyl metal(0) or tetracarbonyl-bis(1,3-butadiene)metal(0) (metal: chromium, molybdenum, tungsten) in the presence of tetracyanoethylene, TCNE, or fumaronitrile , FN, at room temperature yields fram-bis(μ2-tetracyano-ethylene)tetracarbonyl-chromium(0) (1), -molybdenum(0) (2), -tungsten(0) (3) and trans-bis(fumaronitrile)tetracarbonylchromium(0) (4), -tungsten(0) (5) complexes. The complexes were purified by chromatography and recrystallization and characterized by IR , 1H, 13C NMR and mass spectroscopies. It is shown that two tetracyanoethylene ligands are symmetrically bonded to the M(CO)4 moiety through their carbon-carbon double bond in the form of μ2 -TCNE . The two fumaronitrile ligands are bonded to the central atom through their nitrogen atoms. The spectral data are discussed in terms of metal → ligand π - interaction.

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Dissertations / Theses on the topic "Tungstene hexacarbonyle"

1

Parlier, Andrée. "Application des complexes carbeniques du tungstene a la synthese organique et organometallique." Paris 6, 1987. http://www.theses.fr/1987PA066570.

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Paufert, Pierre. "Développement d'un procédé d'élaboration associant lithographie électronique et auto-assemblage pour la fonctionnalisation des surfaces à l'échelle nanométrique." Thesis, Dijon, 2013. http://www.theses.fr/2013DIJOS082/document.

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Le concept de décomposition par un faisceau électronique a été développé dans le but de créer des motifs supportés de taille inférieure à celle atteinte par les méthodes lithographiques classiques. Ce travail avait pour objectif d’appréhender ce concept à travers une séparation des mécanismes mis en jeu, de façon à mieux les comprendre pour mieux les contrôler.Un dispositif a été conçu et un protocole défini où une première étape correspond à l'adsorption à température cryogénique de composés carbonylés à cœur métallique. L’adsorbat est ensuite décomposé par un faisceau d’électrons focalisés puis les résidus de la fragmentation sont éliminés lors de recuits permettant la réorganisation du dépôt lithographié. Pour suivre les différentes étapes, une approche de type « science des surfaces » a été choisie car elle offre la possibilité d’étudier les processus mis en jeu à l’aide de techniques d'analyses sensibles à la chimie.Ainsi, ce travail a permis de mettre en évidence que l'adsorption à température cryogénique de Mo(CO)6 et W(CO)6 sur des surfaces métalliques ou oxydes n'induit pas d'important changement de leur structure moléculaire démontrant que cette étape est renversable. Par ailleurs, il a été montré que les électrons de basse énergie (< 150 eV) engendrent la dissociation de ces molécules par un processus de collision mono-électronique et qu'il est aussi possible de les décomposer à l'aide d'un faisceau d'électrons lorsqu'elles sont physisorbées, menant à la formation de dépôts stables à température ambiante. Un traitement thermique finalise la décomposition. La morphologie finale est liée à la dose d'électrons et à la quantité initiale de molécules adsorbées
The concept of electon beam decomposition has been developed in order to create smaller patterns than those achieved by conventional lithographic methods. This work aimed to go further about this concept through a separation of the involved mechanisms in order to better understand them and thus reach a better control of process.A device was designed and a protocol was defined where the first stage is the adsorption at cryogenic temperature of metal-carbonyl compounds. The adsorbate is then decomposed by a focused electron beam and fragmentation residues are removed through annealing allowing the deposit reorganization. The study of the different steps of the elaboration method was followed through the "surface science" approach because such a way offers the opportunity to study the processes involved by analytical techniques sensitive to material chemistry.Thus, this work has highlighted that the adsorption at cryogenic temperature of Mo(CO)6 and W(CO)6 on metal or oxide surfaces does not induce any significant changes in their molecular structure demonstrating that this step is reversible. Moreover, it was shown that low energy electrons ( <150 eV ) cause dissociation of these molecules by a one-electron process. Moreover, it is possible to decompose adsorbed molecules with a focused electron beam, leading to the formation of a stable deposit at room temperature. Annealing treatment can complete the decomposition. Besides, the final morphology is related to the electron dose as well as the initial amount of adsorbed molecules

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Dyson, Glynn. "The low-temperature chemical vapour deposition of tungsten carbide coatings utilising the pyrolysis of tungsten hexacarbonyl." Thesis, Loughborough University, 1998. https://dspace.lboro.ac.uk/2134/33243.

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A detailed study has been made of the atmospheric pressure chemical vapour deposition (CVD) of tungsten carbide coatings onto powder metallurgy (PM) BT42 grade high speed steel (HSS) indexable cutting tool inserts. The pyrolysis of tungsten hexacarbonyl (W(CO)6) deposition route was utilised in conjunction with a laboratory-scale hot-wall CVD reactor. After numerous coating runs, deposition conditions were established under which rudimentary tungsten carbide coatings could be deposited at 350°C. The characteristics of these coatings were determined using an established characterisation procedure. This involved the following techniques: X-ray diffraction, ball cratering, Auger electron spectroscopy (AES), optical microscopy, fractography/scanning electron microscopy (SEM), profilometry, scratch adhesion testing and micro-indentation hardness testing.

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4

Gates, Richard J. "Dynamics of the Solvent Exchange Reaction of Weakly Bound Organic Solvents to Group 6 Transition Metal Carbonyls and the Molybdenum Hexacarbonyl Mediated Pauson-Khand Reaction." BYU ScholarsArchive, 2012. https://scholarsarchive.byu.edu/etd/2936.

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Many organometallic reactions are solvent-dependent, suggesting solvent molecules interact with reaction intermediates. Studies of the solvent exchange reaction of group 6 transition metal carbonyls with moderately binding ligands have provided insight into these interactions, however, studies of the mechanism for this reaction with weakly binding ligands have not been performed. Experiments were conducted on the nanosecond time scale in methylcyclohexane over the temperature range of 4 to 44 °C using Step Scan FTIR (SS FTIR) spectroscopy with weakly binding ligands benzene and mesitylene. Upon photolysis of the metal hexacarbonyls, the kinetically favored product (M(CO)5(solv)), decays following pseudo-first-order kinetics to the thermodynamical favored product, M(CO)5(L). The decay is fit using a single exponential decay with a single exponential instrument response function, time zero and an offset. An Arrhenius plot yielded activation energies of 23.7 kJ/mol (M = Mo, L = benzene), 35.1 kJ/mol (M = W, L = benzene) and 29.8 kJ/mol (M = Mo, L = mesitylene). DFT calculations using NWCHEM gave binding energies of 45.8 and 54.3 kJ mol-1 for Mo(CO)5C6H12 and W(CO)5C6H12. The experimental and computational results suggest the exchange mechanism proceeds through an associative pathway, were slightly negative values of the entropy of reaction denote that the transition state has greater metal solvent bond breaking character then the more moderately binding ligands in the literature. Density Functional theory was used to calculate C-O vibrational frequencies of metal carbonyl complexes measured in our work and other complexes from the literature, with density functionals B3LYP, M06 and M06-L. Measured and computational frequencies were compared to obtain both an overall vibrational shift and a scaling factor. Scaling factors were found to be 0.9519±0.0095 for B3LYP, 0.9429 ± 0.0087 for M06 and 0.9565 ± 0.0095 for M06-L with overall shifts of 102 ± 16, 121 ± 15, 93 ± 17 cm-1, respectively. The molybdenum mediated Pauson-Khand reaction, a [2+2+1] cyclo-addition begins very similarly to the solvent exchange reaction on molybdenum. The initial product, the solvated complex, decays away with pseudo-first-order kinetics as the solvent is replaced by the C-C triple bond in 2-(2-propen-1-yl)-2-(2-propyn-1-yl)-,1,3-diethyl ester. An Arrhenius plot over the temperature range of -8 to 20° C yielded an energy of activation of 15.6 kJ/mol.

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Ten, Jyi Sheuan. "High speed mask-less laser-controlled precision micro-additive manufacture." Thesis, University of Cambridge, 2019. https://www.repository.cam.ac.uk/handle/1810/285409.

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A rapid, mask-less deposition technique for writing metal tracks has been developed. The technique was based on laser-induced chemical vapour deposition. The novelty in the technique was the usage of pulsed ultrafast lasers instead of continuous wave lasers in pyrolytic dissociation of the chemical precursor. The motivation of the study was that (1) ultrafast laser pulses have smaller heat affected zones thus the deposition resolution would be higher, (2) the ultrashort pulses are absorbed in most materials (including those transparent to the continuous wave light at the same wavelength) thus the deposition would be compatible with a large range of materials, and (3) the development of higher frequency repetition rate ultrafast lasers would enable higher deposition rates. A deposition system was set-up for the study to investigate the ultrafast laser deposition of tungsten from tungsten hexacarbonyl chemical vapour precursors. A 405 nm laser diode was used for continuous wave deposition experiments that were optimized to achieve the lowest track resistivity. These results were used for comparison with the ultrafast laser track deposition. The usage of the 405 nm laser diode was itself novel and beneficial due to the low capital and running cost, high wall plug efficiency, high device lifetime, and shallower optical penetration depth in silicon substrates compared to green argon ion lasers which were commonly used by other investigators. The lowest as-deposited track resistivity achieved in the continuous wave laser experiments on silicon dioxide coated silicon was 93±27 µΩ cm (16.6 times bulk tungsten resistivity). This deposition was done with a laser output power of 350 mW, scan speed of 10 µm/s, deposition pressure of 0.5 mBar, substrate temperature of 100 °C and laser spot size of approximately 7 µm. The laser power, scan speed, deposition pressure and substrate temperature were all optimized in this study. By annealing the deposited track with hydrogen at 650 °C for 30 mins, removal of the deposition outside the laser spot was achieved and the overall track resistivity dropped to 66±7 µΩ cm (11.7 times bulk tungsten resistivity). For ultrafast laser deposition of tungsten, spot dwell experiments showed that a thin film of tungsten was first deposited followed by quasi-periodic structures perpendicular to the linear polarization of the laser beam. The wavelength of the periodic structures was approximately half the laser wavelength (λ/2) and was thought to be formed due to interference between the incident laser and scattered surface waves similar to that in laser-induced surface periodic structures. Deposition of the quasi-periodic structures was possible on stainless steel, silicon dioxide coated silicon wafers, borosilicate glass and polyimide films. The thin-films were deposited when the laser was scanned at higher laser speeds such that the number of pulses per spot was lower (η≤11,000) and using a larger focal spot diameter of 33 µm. The lowest track resistivity for the thin-film tracks on silicon dioxide coated silicon wafers was 37±4 µΩ cm (6.7 times bulk tungsten resistivity). This value was achieved without post-deposition annealing and was lower than the annealed track deposited using the continuous wave laser. The ultrafast tungsten thin-film direct write technique was tested for writing metal contacts to single layer graphene on silicon dioxide coated silicon substrates. Without the precursor, the exposure of the graphene to the laser at the deposition parameters damaged the graphene without removing it. This was evidenced by the increase in the Raman D peak of the exposed graphene compared to pristine. The damage threshold was estimated to be 53±7 mJ/cm2 for a scanning speed of 500 µm/s. The deposition threshold of thin-film tungsten on graphene at that speed was lower at 38±8 mJ/cm2. However, no graphene was found when the deposited thin-film tungsten was dissolved in 30 wt% H2O2 that was tested to have no effect on the graphene for the dissolution time of one hour. The graphene likely reacted with the deposited tungsten to form tungsten carbide which was reported to dissolve in H2O2. Tungsten carbide was also found on the tungsten tracks deposited on reduced graphene oxide samples. The contact resistance between tungsten and graphene was measured by both transfer length and four-point probe method with an average value of 4.3±0.4 kΩ µm. This value was higher than reported values using noble metals such as palladium (2.8±0.4 kΩ µm), but lower than reported values using other metals that creates carbides such as nickel (9.3±1.0 kΩ µm). This study opened many potential paths for future work. The main issue to address in the tungsten ultrafast deposition was the deposition outside the laser spot. This prevented uniform deposition in successive tracks close to one another. The ultrafast deposition technique also needs verification using other precursors to understand the precursor requirements for this process. An interesting future study would be a combination with a sulphur source for the direct write of tungsten disulphide, a transition metal dichalcogenide that has a two-dimensional structure similar to graphene. This material has a bandgap and is sought after for applications in high-end electronics, spintronics, optoelectronics, energy harvesting, flexible electronics, DNA sequencing and personalized medicine. Initial tests using sulphur micro-flakes on silicon and stainless-steel substrates exposed to the tungsten precursor and ultrafast laser pulses produced multilayer tungsten disulphide as verified in Raman measurements.

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6

"Desulfurdimerization of dithioacetals with tungsten hexacarbonyl." Chinese University of Hong Kong, 1989. http://library.cuhk.edu.hk/record=b5886174.

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"Tungsten hexacarbonyl mediated C-S bond cleavage reactions." Chinese University of Hong Kong, 1988. http://library.cuhk.edu.hk/record=b5885974.

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8

GUO, ZHI-HONG, and 郭志洪. "Tungsten hexacarbonyl [W(CO)6] promoted reaction of dithioacetals." Thesis, 1990. http://ndltd.ncl.edu.tw/handle/36807738214169911961.

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碩士
國立臺灣大學
化學研究所
78
2.2-(9′,9〞- 亞芴基)-1.3-二硫環己烷在2.5 當量六羰基鎢[W(CO) ]作用下, 生成聯亞芴13, 和三偶合物9,9-(9′,9〞- 二芴基)-芴14 ,化合物14經 H N.M.R., C N.M.R.,2D-COSY,N.O.E(Nuclear Over-hauser Effect)光譜及X-Ray 繞射將它的立體結構詳細決定, 其它1,3-二硫環己烷衍生物, 於相同反應條件下, 除了生成烯類產物外, 同時得到還原偶合產物。藉由還原產物的生成, 我們可以確定反應機構進行自由基(Free radical)的反應路徑, 并且經過1,5-氫原子轉移的步驟(1,5-Hy-drogen Mi- gration)。導電高分子在近二十年來被科學家積極研究發展, 聚亞苯基亞烯(PPC) 是導電高分子材質中極被重視的一項, 含取代基之聚- 亞苯基亞烯基除了導電性外, 還可具備其它特性, 如: 耐熱, 耐酸鹼……等, 視取代基的不同而不同; 聚-(1.4-亞苯基-1,2- 二苯基亞烯) 既是同時具有電導性和耐熱性之高分子。我們合成化合物37a,37b,37c,利用六羰基鎢[W(CO) ]促進分子間硫縮酮的脫硫偶合反應, 得到黃棕色寡聚物38a,38b, 38c,再經250℃ 真空熱解(Vaccum pyrolysis), 得紅色之寡聚物38a',38b',38c', 它們的數目平均分子量(Mn)約2000-4000,其它物性及光譜數據將在本論文中有詳細的探討。

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"Desulfur-dimerization of dithioacetals with tungsten hexacarbonyl: synthesis of bifluorenylidenes." Chinese University of Hong Kong, 1987. http://library.cuhk.edu.hk/record=b5885803.

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Tiao, Chun Min, and 刁俊民. "Effect of LCVD Process Parameters on the Properties of Tungsten Thin Films Using Tungsten Hexacarbonyl Precursor." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/29033277864775150937.

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碩士
長庚大學
化工與材料工程研究所
97
Tungsten (W) thin films has many applications in industry, including the organic material urges nearly pharmaceutical, only such functions as refracting material and wire are mended. This paper thesis utilize LCVD system photolytic by laser beam W(CO)6 deposit W mental line. By changing the laser power , response temperature and flow of gas on the glass substrate is covered with ITO thin film, to discussion about thin films growth and electricity change. Which is measured by XRD , SEM and C-AFM . Confirms the tungsten metal line structure and vary thin film growth and measures the tungsten thin films with EDX with XRD , SEM, learn implicit C , O atoms of tungsten thin films, examine average electric current of the tungsten line, and resistivity of calculate thin films of Sheet Resistance method with C-AFM amount.

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Books on the topic "Tungstene hexacarbonyle"

1

Dyson, Glynn. The low temperature chemical vapour deposition of tungsten carbide coatings utilising the pyrolysis of tungsten hexacarbonyl. 1998.

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Book chapters on the topic "Tungstene hexacarbonyle"

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Hurd, Dallas T., and Eugene O. Brimm. "Tungsten Hexacarbonyl." In Inorganic Syntheses, 135–38. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470132364.ch37.

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2

Winter, Mark J. "Hexacarbonyls and Carbonyl Complexes of Carbon σ-Bonded Ligands of Chromium, Molybdenum and Tungsten." In Comprehensive Organometallic Chemistry II, 155–214. Elsevier, 1995. http://dx.doi.org/10.1016/b978-008046519-7.00040-x.

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Conference papers on the topic "Tungstene hexacarbonyle"

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Creighton, J. R. "Non-selective tungsten chemical-vapor deposition using Tungsten hexacarbonyl." In AIP Conference Proceedings Vol. 167. AIP, 1988. http://dx.doi.org/10.1063/1.37175.

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DiBattista, Michael, Corey Senowitz, Hasan Faraby, and Prabhakar Bandaru. "Using Energy Dispersive Spectroscopy (EDS) to Determine the Resistance of FIB Jumpers for Circuit Edit." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0278.

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Abstract A key capability of focused ion beam (FIB) tools is the ability to deposit conductive materials by introducing organometallic precursors such as tungsten hexacarbonyl [W(CO)6] or (methylcyclopentadienl) trimethyl platinum [C9H17Pt]. The FIB deposited metal is often used in applications such as the modification of integrated circuits (ICs) by creating new electrical connection on the device. The electrical properties of the FIB material are of particular concern to high speed digital and radio frequency (RF) circuit designers because the resistivity of the FIB deposited metal is orders of magnitude higher in value than the near bulk resistivity value of the metals used in IC manufacturing. In this paper, we developed a correlation between the chemical composition of the FIB deposited metal and the electrical resistivity using an effective media theory (EMT) model. Analysis shows that gallium from the ion beam is the dominant contributor to lowering the resistivity of the jumper. The results of this work and model allow us to understand the role the chemical elements play in the electrical resistance of the FIB electrical jumper and to estimate the FIB metal resistance from energy dispersive spectroscopy (EDS) analysis and the geometry.

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Reports on the topic "Tungstene hexacarbonyle"

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Poston, Shelly L., and Arnold Reisman. The Relative Stabilities of Tungsten Hexacarbonyl, Silver Neodecanoate, Some Metal Acetyl- and Hexafluoroacetyl-Acetonates and the Thermal Properties of the Pallidium (2) Acetonates. Fort Belvoir, VA: Defense Technical Information Center, February 1989. http://dx.doi.org/10.21236/ada204790.

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