Academic literature on the topic 'Tunnel magneto resistance'

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Journal articles on the topic "Tunnel magneto resistance"

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Lu, Lei, Zihui Wang, Griffin Mead, Christian Kaiser, Qunwen Leng, and Mingzhong Wu. "Damping in free layers of tunnel magneto-resistance readers." Applied Physics Letters 105, no. 1 (2014): 012405. http://dx.doi.org/10.1063/1.4888615.

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Wang, Bin, Jianwei Li, Yunjin Yu, Yadong Wei, Jian Wang, and Hong Guo. "Giant tunnel magneto-resistance in graphene based molecular tunneling junction." Nanoscale 8, no. 6 (2016): 3432–38. http://dx.doi.org/10.1039/c5nr06585b.

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Bouchikhaoui, H., P. Stender, Z. Balogh, et al. "Nano-analysis of Ta/FeCoB/MgO tunnel magneto resistance structures." Acta Materialia 116 (September 2016): 298–307. http://dx.doi.org/10.1016/j.actamat.2016.06.045.

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Yuasa, S., T. Sato, E. Tamura, et al. "Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance." Europhysics Letters (EPL) 52, no. 3 (2000): 344–50. http://dx.doi.org/10.1209/epl/i2000-00445-5.

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Xiang, X. H., T. Zhu, Z. P. Zhang, T. P. Beebe, and John Q. Xiao. "Bulk contribution to magneto-resistance In Co-based magnetic tunnel junction." Journal of Magnetism and Magnetic Materials 272-276 (May 2004): 1818–20. http://dx.doi.org/10.1016/j.jmmm.2003.12.815.

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Gao, Lu, Fang Chen, Yingfei Yao, and Dacheng Xu. "High-Precision Acceleration Measurement System Based on Tunnel Magneto-Resistance Effect." Sensors 20, no. 4 (2020): 1117. http://dx.doi.org/10.3390/s20041117.

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A high-precision acceleration measurement system based on an ultra-sensitive tunnel magneto-resistance (TMR) sensor is presented in this paper. A “force–magnetic–electric” coupling structure that converts an input acceleration into a change in magnetic field around the TMR sensor is designed. In such a structure, a micro-cantilever is integrated with a magnetic field source on its tip. Under an acceleration, the mechanical displacement of the cantilever causes a change in the spatial magnetic field sensed by the TMR sensor. The TMR sensor is constructed with a Wheatstone bridge structure to ac
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Fujiwara, Kosuke, Mikihiko Oogane, Akitake Kanno, et al. "Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors." Applied Physics Express 11, no. 2 (2018): 023001. http://dx.doi.org/10.7567/apex.11.023001.

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Manago, T., M. Mizuguchi, and H. Akinaga. "Growth of Fe(100) on GaAs(100) for tunnel magneto-resistance junctions." Journal of Crystal Growth 237-239 (April 2002): 1378–82. http://dx.doi.org/10.1016/s0022-0248(01)02187-x.

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Uemura, Tetsuya, Ryotaro Miura, Takashi Yamazuki, Takuya Sone, Ken-ichi Matsuda, and Masafumi Yamamoto. "Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junction." Physica E: Low-dimensional Systems and Nanostructures 32, no. 1-2 (2006): 383–86. http://dx.doi.org/10.1016/j.physe.2005.12.076.

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Krumme, B., D. Ebke, C. Weis, et al. "Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier." Applied Physics Letters 101, no. 23 (2012): 232403. http://dx.doi.org/10.1063/1.4769180.

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Dissertations / Theses on the topic "Tunnel magneto resistance"

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Tyagi, Pawan. "FABRICATION AND CHARACTERIZATION OF MOLECULAR SPINTRONICS DEVICES." UKnowledge, 2008. http://uknowledge.uky.edu/gradschool_diss/614.

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Fabrication of molecular spin devices with ferromagnetic electrodes coupled with a high spin molecule is an important challenge. This doctoral study concentrated on realizing a novel molecular spin device by the bridging of magnetic molecules between two ferromagnetic metal layers of a ferromagnetic-insulator-ferromagnetic tunnel junction on its exposed pattern edges. At the exposed sides, distance between the two metal electrodes is equal to the insulator film thickness; insulator film thickness can be precisely controlled to match the length of a target molecule. Photolithography and thin-fi
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Gokce, Aisha. "Low frequency current and resistance fluctuations in magnetic tunnel junctions." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 203 p, 2009. http://proquest.umi.com/pqdweb?did=1896928791&sid=9&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Hassen, Emeline. "Elaboration de jonctions tunnel magnétiques à barrière SrTiO3 pour application bas RA." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00845676.

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Ce travail de thèse porte sur l'élaboration et la caractérisation de jonctions tunnel magnétiques (JTM) polycristallines à barrière d'oxyde de titane de strontium, SrTiO3, qui se situe parmi les nouvelles barrières tunnel aux bandes interdites les plus étroites, recensées par la littérature. De telles barrières pourraient répondre à un besoin applicatif crucial : avoir un produit résistance x surface, RA, plus faible dans les JTM, ou à son corollaire, avoir une épaisseur de barrière plus forte à RA égal tout en conservant une magnétorésistance tunnel, TMR, élevée. De précédents travaux ont mon
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Schuhmann, Henning. "Hochauflösende mikroskopische und spektroskopische Untersuchungen zur strukturellen Ordnung an MgO-CoFeB-Grenzflächen." Doctoral thesis, 2014. http://hdl.handle.net/11858/00-1735-0000-0023-9929-2.

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Tunnelmagnetowiderstandselemente (MTJ) mit einer kristallinen MgO Tunnelbarriere zwischen amorphen CoFeB-Elektroden haben Aufgrund ihres hohen Tunnelmagnetowiderstandes (TMR) und der guten Integrationsmöglichkeit in bestehende Prozesse viel Aufmerksamkeit bekommen. Dabei zeigten vorherige Berechnungen, dass die strukturellen und chemischen Eigenschaften der Grenzfläche einen signifikanten Einfluss auf den TMR aufweisen, weshalb diese Grenzfläche im Rahmen dieser Arbeit mittels quantitativer, hochauflösender und analytischer Transmissionselektronenmikroskopie analysiert wurde. Um einen hohen T
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Book chapters on the topic "Tunnel magneto resistance"

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Hirota, Eiichi, Hirosi Sakakima, and Koichiro Inomata. "Tunnel-Type GMR (TMR) Devices." In Giant Magneto-Resistance Devices. Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-04777-4_5.

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Conference papers on the topic "Tunnel magneto resistance"

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Chatterji, N., A. Sharma, A. Tulapurkar, and B. Muralidharan. "Nanoscale Magneto-Resistance Sensors with Improved Sensitivity using Resonant Tunneling Magnetic Tunnel Junctions." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-12-9.

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Uemura, Tetsuya, Satoshi Honma, Takao Marukame, and Masafumi Yamamoto. "Demonstration of Enhanced Tunneling Magneto Resistance Ratio for a Magnetic Tunnel Junction Connected in Parallel with a Tunnel Diode." In 2003 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2003. http://dx.doi.org/10.7567/ssdm.2003.p8-11l.

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Gao, Lu, Xiang Xu, Suiqiong Li, Dacheng Xu, and Yingfei Yao. "Micro Acceleration Measurement System Based On Highly-Sensitive Tunnel Magneto-Resistance Sensor." In 2019 IEEE International Symposium on Inertial Sensors and Systems (INERTIAL). IEEE, 2019. http://dx.doi.org/10.1109/isiss.2019.8739736.

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Chavan, K. T., Sharat Chandra, and S. Mathi Jaya. "Study of tunnel magneto resistance in zinc doped Fe|MgO|Fe sandwiches." In DAE SOLID STATE PHYSICS SYMPOSIUM 2018. AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5113287.

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Hao, Yu, Li Bu, Qu Jiaqi, and Qian Zheng. "Modeling hysteresis of Giant Magneto Resistive and Tunnel Magneto Resistance sensors at high frequency based on automatic test system." In 2017 13th IEEE International Conference on Electronic Measurement & Instruments (ICEMI). IEEE, 2017. http://dx.doi.org/10.1109/icemi.2017.8265794.

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Ku, Pon, and Young Chung. "Resistance Drift of Aluminum Oxide Magnetic Tunnel Junction Devices." In 2006 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/relphy.2006.251258.

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Hao Meng and Jian-Ping Wang. "Spin transfer effect in magnetic tunnel junction with low resistance." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463498.

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Jiang, Lai, Jonathan F. Skovholt, Edmund R. Nowak, and Jon M. Slaughter. "Low-frequency magnetic and resistance noise in magnetoresistive tunnel junctions." In Second International Symposium on Fluctuations and Noise, edited by Dragana Popovic, Michael B. Weissman, and Zoltan A. Racz. SPIE, 2004. http://dx.doi.org/10.1117/12.544659.

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Nagamine, Y., H. Maehara, K. Tsunekawa, et al. "Ultra-Low Resistance-Area-Product in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions." In INTERMAG 2006 - IEEE International Magnetics Conference. IEEE, 2006. http://dx.doi.org/10.1109/intmag.2006.375863.

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Kil, G. H., J. T. Choi, C. M. Choi, H. Sukegawa, S. Mitani, and Y. H. Song. "Stochastic Model for SPICE simulation about Resistance Distribution of Magnetic Tunnel Junction." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-4-10.

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