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Journal articles on the topic 'Tunnel magneto resistance'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Lu, Lei, Zihui Wang, Griffin Mead, Christian Kaiser, Qunwen Leng, and Mingzhong Wu. "Damping in free layers of tunnel magneto-resistance readers." Applied Physics Letters 105, no. 1 (2014): 012405. http://dx.doi.org/10.1063/1.4888615.

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2

Wang, Bin, Jianwei Li, Yunjin Yu, Yadong Wei, Jian Wang, and Hong Guo. "Giant tunnel magneto-resistance in graphene based molecular tunneling junction." Nanoscale 8, no. 6 (2016): 3432–38. http://dx.doi.org/10.1039/c5nr06585b.

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3

Bouchikhaoui, H., P. Stender, Z. Balogh, et al. "Nano-analysis of Ta/FeCoB/MgO tunnel magneto resistance structures." Acta Materialia 116 (September 2016): 298–307. http://dx.doi.org/10.1016/j.actamat.2016.06.045.

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4

Yuasa, S., T. Sato, E. Tamura, et al. "Magnetic tunnel junctions with single-crystal electrodes: A crystal anisotropy of tunnel magneto-resistance." Europhysics Letters (EPL) 52, no. 3 (2000): 344–50. http://dx.doi.org/10.1209/epl/i2000-00445-5.

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5

Xiang, X. H., T. Zhu, Z. P. Zhang, T. P. Beebe, and John Q. Xiao. "Bulk contribution to magneto-resistance In Co-based magnetic tunnel junction." Journal of Magnetism and Magnetic Materials 272-276 (May 2004): 1818–20. http://dx.doi.org/10.1016/j.jmmm.2003.12.815.

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6

Gao, Lu, Fang Chen, Yingfei Yao, and Dacheng Xu. "High-Precision Acceleration Measurement System Based on Tunnel Magneto-Resistance Effect." Sensors 20, no. 4 (2020): 1117. http://dx.doi.org/10.3390/s20041117.

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A high-precision acceleration measurement system based on an ultra-sensitive tunnel magneto-resistance (TMR) sensor is presented in this paper. A “force–magnetic–electric” coupling structure that converts an input acceleration into a change in magnetic field around the TMR sensor is designed. In such a structure, a micro-cantilever is integrated with a magnetic field source on its tip. Under an acceleration, the mechanical displacement of the cantilever causes a change in the spatial magnetic field sensed by the TMR sensor. The TMR sensor is constructed with a Wheatstone bridge structure to ac

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7

Fujiwara, Kosuke, Mikihiko Oogane, Akitake Kanno, et al. "Magnetocardiography and magnetoencephalography measurements at room temperature using tunnel magneto-resistance sensors." Applied Physics Express 11, no. 2 (2018): 023001. http://dx.doi.org/10.7567/apex.11.023001.

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8

Manago, T., M. Mizuguchi, and H. Akinaga. "Growth of Fe(100) on GaAs(100) for tunnel magneto-resistance junctions." Journal of Crystal Growth 237-239 (April 2002): 1378–82. http://dx.doi.org/10.1016/s0022-0248(01)02187-x.

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9

Uemura, Tetsuya, Ryotaro Miura, Takashi Yamazuki, Takuya Sone, Ken-ichi Matsuda, and Masafumi Yamamoto. "Analysis of anisotropic tunnel magneto-resistance of (Ga,Mn)As/AlAs/(Ga,Mn)As magnetic tunnel junction." Physica E: Low-dimensional Systems and Nanostructures 32, no. 1-2 (2006): 383–86. http://dx.doi.org/10.1016/j.physe.2005.12.076.

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10

Krumme, B., D. Ebke, C. Weis, et al. "Depth-selective electronic and magnetic properties of a Co2MnSi tunnel magneto-resistance electrode at a MgO tunnel barrier." Applied Physics Letters 101, no. 23 (2012): 232403. http://dx.doi.org/10.1063/1.4769180.

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11

SUN, DALI, TEK P. BASEL, BHOJ R. GAUTAM, et al. "GIANT MAGNETO-ELECTROLUMINESCENCE FROM HYBRID SPIN-ORGANIC LIGHT EMITTING DIODES." SPIN 04, no. 01 (2014): 1450002. http://dx.doi.org/10.1142/s2010324714500027.

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An important application that may boost the use of magnetic-field controlled organic devices is significant magnetically modulated electroluminescence (MEL) at room temperature (RT). Whereas inorganic magnetic tunnel junctions show RT magneto-resistance (MR)> 80%, these devices do not exhibit electroluminescence. In contrast, organic light-emitting diodes (OLED) show substantive electroluminescence. Alas, at RT both organic spin valves and spin-OLEDs have shown rather small MR and MEL. We report here a hybrid organic/inorganic magnetic-field controlled device (h-OLED) which comprises of an

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12

Parkin, Stuart. "Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions." MRS Bulletin 31, no. 5 (2006): 389–94. http://dx.doi.org/10.1557/mrs2006.99.

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AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its

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13

KRUPA, M. M., and A. M. KOROSTIL. "ON LASER-INDUCED MAGNETORESISTANCE EFFECT IN MAGNETIC JUNCTIONS." International Journal of Modern Physics B 26, no. 31 (2012): 1250177. http://dx.doi.org/10.1142/s0217979212501779.

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We have studied the laser-induced high-speed remagnetization and tunneling magnetoresistance (TMR) effects in tunnel magnetic junctions (TMJ). Using magneto-optical investigations, all-optical pump and probe technique, we have studied mechanisms of the laser-induced remagnetization and shown feasibility of the high-speed laser-controlled remagnetization and resistance switching in the TMJ. It is shown that the laser-induced remagnetization is caused by the internal effective magnetic fields of the inverse magneto-optical Faraday effect and the effective magnetic field of s–d-exchange interacti

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14

Swerts, J., S. Mertens, T. Lin, et al. "BEOL compatible high tunnel magneto resistance perpendicular magnetic tunnel junctions using a sacrificial Mg layer as CoFeB free layer cap." Applied Physics Letters 106, no. 26 (2015): 262407. http://dx.doi.org/10.1063/1.4923420.

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15

Nestoklon, M. O., O. Krebs, H. Jaffrès, et al. "Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach." Applied Physics Letters 100, no. 6 (2012): 062403. http://dx.doi.org/10.1063/1.3683525.

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16

Demin, G. D., K. A. Zvezdin, and A. F. Popkov. "Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction." Advances in Condensed Matter Physics 2019 (January 23, 2019): 1–9. http://dx.doi.org/10.1155/2019/5109765.

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Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (MTJ) in the presence of a thermal gradient through a tunnel junction are discussed. Theoretical estimates of the static and dynamic components of the microwave sensitivity of the spin-torque diode, related to thermoelectric tunnel magneto-Seebeck effect and the thermal transfer of spin angular momentum in the MTJ under nonuniform heating, are

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17

Raturi, Ashish, and Sudhanshu Choudhary. "Simulation Study on Understanding the Spin Transport in MgO Adsorbed Graphene Based Magnetic Tunnel Junction." SPIN 06, no. 03 (2016): 1650011. http://dx.doi.org/10.1142/s2010324716500119.

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First principles calculations of spin-dependent electronic transport properties of magnetic tunnel junction (MTJ) consisting of MgO adsorbed graphene nanosheet sandwiched between two CrO2 half-metallic ferromagnetic (HMF) electrodes is reported. MgO adsorption on graphene opens bandgap in graphene nanosheet which makes it more suitable for use as a tunnel barrier in MTJs. It was found that MgO adsorption suppresses transmission probabilities for spin-down channel in case of parallel configuration (PC) and also suppresses transmission in antiparallel configuration (APC) for both spin-up and spi

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18

Mathi Jaya, S., and M. C. Valsakumar. "Middle-layer ferromagnetism-induced transition of the tunnel magneto-resistance in double-barrier magnetic tunnel junctions: A non-equilibrium Green's function study." EPL (Europhysics Letters) 110, no. 4 (2015): 47005. http://dx.doi.org/10.1209/0295-5075/110/47005.

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19

Goswami, A., M. Yunus, P. P. Ruden, and D. L. Smith. "Magneto-resistance of organic spin valves due to spin-polarized tunnel injection and extraction of charge carriers." Journal of Applied Physics 111, no. 3 (2012): 034505. http://dx.doi.org/10.1063/1.3681173.

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20

Lyo, S. K., N. E. Harff, and J. A. Simmons. "Magneto-quantum-resistance oscillations in tunnel-coupled double quantum wells in tilted magnetic fields: Variable Landau biladders." Physical Review B 58, no. 3 (1998): 1572–77. http://dx.doi.org/10.1103/physrevb.58.1572.

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21

Lee, Du-Yeong, Hyung-Tak Seo, and Jea-Gun Park. "Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions." Journal of Materials Chemistry C 4, no. 1 (2016): 135–41. http://dx.doi.org/10.1039/c5tc03669k.

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For Co<sub>2</sub>Fe<sub>6</sub>B<sub>2</sub>–MgO based p-MTJ spin valves with [Co/Pt]<sub>n</sub>–SyAF layers ex situ annealed at 350 °C and 30 kOe for 30 min, the tunneling magneto-resistance (TMR) ratio strongly depended on the radio-frequency (RF) sputtering power in a 0.65–1.15 nm thick MgO tunneling barrier, achieving a TMR ratio of 168% at 300 W.

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22

You, Biao, Wenting Sheng, Liang Sun, et al. "Influence of annealing on the magneto-resistance effect and microstructure in the two-step oxidized FeCo/AlOx/Co tunnel junction." Journal of Physics D: Applied Physics 36, no. 19 (2003): 2313–16. http://dx.doi.org/10.1088/0022-3727/36/19/001.

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23

Niermann, Tore, Karsten Thiel, and Michael Seibt. "Pattern Recognition in High-Resolution Electron Microscopy of Complex Materials." Microscopy and Microanalysis 12, no. 6 (2006): 476–82. http://dx.doi.org/10.1017/s1431927606060685.

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Structural features like defects or heterointerfaces in crystals or amorphous phases give rise to different local patterns in high-resolution electron micrographs or object wave functions. Pattern recognition techniques can be used to identify these typical patterns that constitute the image itself, as was already demonstrated for compositional changes in isostructural heterostructures, where the patterns within unit cells of the lattice were analyzed. To extend such analyses to more complex materials, we examined patterns in small circular areas centered on intensity maxima of the image. Nons

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24

MOLENKAMP, LAURENS W. "DEVICE CONCEPTS IN SEMICONDUCTOR SPINTRONICS." International Journal of Modern Physics B 22, no. 01n02 (2008): 119. http://dx.doi.org/10.1142/s0217979208046207.

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Semiconductor spintronics has now reached a stage where the basic physical mechanisms controlling spin injection and detection are understood. Moreover, some critical technological issues involved in the growth and lithography of the magnetic semiconductors have been solved. This has allowed us to explore the physics of meanwhile quite complex spintronic devices. The lectures will start with an introduction to spin transport in metals and semiconductors. Building upon this, I will discuss various simple devices that demonstrate this basic physics in action. Subsequently, more advanced devices

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25

Zhao, Yizhen, Xinhua Wang, Mingfei Wang, et al. "Harmonic Detection System and Identification Algorithm for Steel Pipeline Defects." European Journal of Electrical Engineering 23, no. 1 (2021): 17–26. http://dx.doi.org/10.18280/ejee.230103.

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Aiming at the problem of defects detection of steel pipeline, a harmonic detection system was developed based on electromagnetic principle, and the target signal identification algorithm was studied. The Advanced RISC Machine (ARM) Cortex-M3 was adopted to design digital adjustable harmonic excitation source, and its effective output power can up to 70 W. The Field Programmable Gate Arrays (FPGA) and ARM Cortex-M4 were introduced to design 15 channels high speed data collector, which parallel local-storage rate of each channel can reach 4.7 kHz. The electromagnetic focusing excitation array an

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26

Song, Se Ahn, Tatsumi Hirano, Jong Bong Park, Kazutoshi Kaji, Ki Hong Kim, and Shohei Terada. "Searching Ultimate Nanometrology for AlOx Thickness in Magnetic Tunnel Junction by Analytical Electron Microscopy and X-ray Reflectometry." Microscopy and Microanalysis 11, no. 5 (2005): 431–45. http://dx.doi.org/10.1017/s1431927605050580.

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Practical analyses of the structures of ultrathin multilayers in tunneling magneto resistance (TMR) and Magnetic Random Access Memory (MRAM) devices have been a challenging task because layers are very thin, just 1–2 nm thick. Particularly, the thinness (∼1 nm) and chemical properties of the AlOx barrier layer are critical to its magnetic tunneling property. We focused on evaluating the current TEM analytical methods by measuring the thickness and composition of an AlOx layer using several TEM instruments, that is, a round robin test, and cross-checked the thickness results with an X-ray refle

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27

Hong-Xiang, Wei, Lu Qing-Feng, Zhao Su-Fen, Zhang Xie-Qun, Feng Jia-Feng, and Han Xiu-Feng. "Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions." Chinese Physics 13, no. 9 (2004): 1553–59. http://dx.doi.org/10.1088/1009-1963/13/9/033.

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28

Filatov, Alexander, Alexander Pogorelov, and Yevgen Pogoryelov. "Negative differential resistance in magnetic tunnel junction systems." physica status solidi (b) 251, no. 1 (2013): 172–77. http://dx.doi.org/10.1002/pssb.201349258.

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29

Ju, Yongho “Sungtaek.” "Nanoscale Thermal Phenomena in Tunnel Junctions for Spintronics Applications." Journal of Electronic Packaging 128, no. 2 (2005): 109–14. http://dx.doi.org/10.1115/1.2165215.

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The nascent field of spintronics has great potential to enable new types of information processing and storage devices and supplement conventional semiconductor electronics. An overview of nanoscale thermal phenomena in a tunnel junctions is provided, which is one of the key building blocks of spintronic devices. Experiments showed that the thermal resistance of nanoscale AlOx tunnel barriers increases linearly with thickness, which is consistent with the theory of energy transport in highly disordered materials. Heat conduction across a tunnel junction is impeded by significant additional res

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30

Krzysteczko, Patryk, Xinli Kou, Karsten Rott, Andy Thomas, and Günter Reiss. "Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers." Journal of Magnetism and Magnetic Materials 321, no. 3 (2009): 144–47. http://dx.doi.org/10.1016/j.jmmm.2008.08.088.

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31

Zólomy, I. "Theory of the negative resistance avalanche MIS tunnel diode." Physica Status Solidi (a) 115, no. 1 (1989): K129—K131. http://dx.doi.org/10.1002/pssa.2211150170.

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32

Ventura, J., R. Ferreira, J. M. Teixeira, et al. "Transport Properties of Low Resistance Underoxidized Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 43, no. 6 (2007): 2815–17. http://dx.doi.org/10.1109/tmag.2007.893699.

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33

Takeuchi, Y., K. Komatsu, H. Maki, T. Taniyama, and T. Sato. "Spin-glass behavior in zero magnetic field using tunnel resistance." Journal of Magnetism and Magnetic Materials 310, no. 2 (2007): 1503–5. http://dx.doi.org/10.1016/j.jmmm.2006.10.1099.

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34

Bruno, Flavio Y., Sören Boyn, Stéphane Fusil, et al. "Millionfold Resistance Change in Ferroelectric Tunnel Junctions Based on Nickelate Electrodes." Advanced Electronic Materials 2, no. 3 (2016): 1500245. http://dx.doi.org/10.1002/aelm.201500245.

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35

Hung Nguyen, Viet, Jérôme Saint-Martin, Damien Querlioz, et al. "Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance." Journal of Computational Electronics 12, no. 2 (2013): 85–93. http://dx.doi.org/10.1007/s10825-013-0434-2.

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36

Kumar, Umesh. "A Complication of Negative Resistance Circuits Generated by Two Novel Algorithms." Active and Passive Electronic Components 25, no. 3 (2002): 211–14. http://dx.doi.org/10.1080/08827510213495.

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There are two algorithms to generate a negative-resistance device which exhibits either a type-N shaped V-1 characteristic similar to a tunnel diode, or a type-S shaped V-1 characteristic similar to a four layered pnpn diode. We present here a selection of these circuits using bipolar, JFET or MOSFET or their combinations.

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37

Tomita, Hiroyuki, Hiroki Maehara, Takayuki Nozaki, and Yoshishige Suzuki. "Negative Dynamic Resistance and RF Amplification in Magnetic Tunnel Junctions." Journal of Magnetics 16, no. 2 (2011): 140–44. http://dx.doi.org/10.4283/jmag.2011.16.2.140.

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38

Jamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.

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Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for appli

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39

Tyagi, Pawan, and Edward Friebe. "Large resistance change on magnetic tunnel junction based molecular spintronics devices." Journal of Magnetism and Magnetic Materials 453 (May 2018): 186–92. http://dx.doi.org/10.1016/j.jmmm.2018.01.024.

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40

Yaowen Liu, Zongzhi Zhang, and P. P. Freitas. "Hot-spot mediated current-induced resistance change in magnetic tunnel junctions." IEEE Transactions on Magnetics 39, no. 5 (2003): 2833–35. http://dx.doi.org/10.1109/tmag.2003.815727.

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41

Nishioka, S., Y. V. Hamada, R. Matsumoto, et al. "Differential conductance measurements of low-resistance CoFeB/MgO/CoFeB magnetic tunnel junctions." Journal of Magnetism and Magnetic Materials 310, no. 2 (2007): e649-e651. http://dx.doi.org/10.1016/j.jmmm.2006.10.773.

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42

Kyung, H., J. H. Lee, C. S. Yoon, and C. K. Kim. "Transmission Electron Microscopy Study of Thermally Annealed Low Resistance Magnetic Tunnel Junction." physica status solidi (a) 191, no. 1 (2002): 296–304. http://dx.doi.org/10.1002/1521-396x(200205)191:1<296::aid-pssa296>3.0.co;2-3.

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43

Vasilopoulos, P., and O. Raichev. "Resistance and transresistance of two Coulomb- and tunnel-coupled quantum wires." Physica E: Low-dimensional Systems and Nanostructures 6, no. 1-4 (2000): 684–88. http://dx.doi.org/10.1016/s1386-9477(99)00152-6.

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44

Vasil’ev, D. V., D. V. Kostyuk, E. P. Orlov, et al. "Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect." Russian Microelectronics 49, no. 2 (2020): 132–38. http://dx.doi.org/10.1134/s1063739720010138.

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45

Xie, ZhengWei, Houxiang Lv, Ling Li, and Ming Xu. "The tunneling magnetic resistance in ferromagnetic junctions with spin-filter composite tunnel barriers." Journal of Magnetism and Magnetic Materials 405 (May 2016): 353–57. http://dx.doi.org/10.1016/j.jmmm.2015.12.054.

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46

Aliev, K. M., I. K. Kamilov, Kh O. Ibragimov, and N. S. Abakarova. "Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes." Semiconductors 43, no. 4 (2009): 495–99. http://dx.doi.org/10.1134/s1063782609040162.

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47

Hasan, Syed M. N., Brendan P. Gunning, Zane J.-Eddine, et al. "All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions." Journal of Physics D: Applied Physics 54, no. 15 (2021): 155103. http://dx.doi.org/10.1088/1361-6463/abdb0f.

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48

Yarn, K. F. "Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide." Active and Passive Electronic Components 25, no. 3 (2002): 233–37. http://dx.doi.org/10.1080/08827510213494.

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First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epita

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49

Tsunekawa, K., D. D. Djayaprawira, S. Yuasa, et al. "Huge magnetoresistance and low junction resistance in magnetic tunnel junctions with crystalline MgO barrier." IEEE Transactions on Magnetics 42, no. 2 (2006): 103–7. http://dx.doi.org/10.1109/tmag.2005.861786.

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50

Lachenal, D., P. Papet, B. Legradic, et al. "Optimization of tunnel-junction IBC solar cells based on a series resistance model." Solar Energy Materials and Solar Cells 200 (September 2019): 110036. http://dx.doi.org/10.1016/j.solmat.2019.110036.

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