Journal articles on the topic 'Two Dimensional Electron Gas System (2DEG)'
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Shimizu, Sunao, Mohammad Saeed Bahramy, Takahiko Iizuka, et al. "Enhanced thermopower in ZnO two-dimensional electron gas." Proceedings of the National Academy of Sciences 113, no. 23 (2016): 6438–43. http://dx.doi.org/10.1073/pnas.1525500113.
Full textNajafi, M. N., S. Tizdast, Z. Moghaddam, and M. Samadpour. "Flicker noise in two-dimensional electron gas." Physica Scripta 96, no. 12 (2021): 125259. http://dx.doi.org/10.1088/1402-4896/ac3c11.
Full textJavaid Iqbal, Muhammad, Dirk Reuter, Andreas Dirk Wieck, and Caspar van der Wal. "Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure." European Physical Journal Applied Physics 89, no. 2 (2020): 20101. http://dx.doi.org/10.1051/epjap/2020190202.
Full textAn, Yuan, Kailin Ren, Luqiao Yin, and Jianhua Zhang. "Modeling on Monolithic Integration Structure of AlGaN/InGaN/GaN High Electron Mobility Transistors and LEDs: 2DEG Density and Radiative Recombination." Electronics 12, no. 5 (2023): 1087. http://dx.doi.org/10.3390/electronics12051087.
Full textXu, W., and C. Zhang. "Electrical Generation of Spontaneous Optical Emission in Electrically Modulated Two-Dimensional Electron Gases at Low-Temperatures." International Journal of Modern Physics B 12, no. 05 (1998): 579–90. http://dx.doi.org/10.1142/s021797929800034x.
Full textJin, Eric N., Lior Kornblum, Charles H. Ahn, and Frederick J. Walker. "Integrating 2D electron gas oxide heterostructures on silicon using rare-earth titanates." MRS Advances 1, no. 4 (2016): 287–92. http://dx.doi.org/10.1557/adv.2016.95.
Full textBhattacharya, Sanchari, Soumyasree Jena, and Sanjoy Datta. "Emergent Phenomena in KTaO3/SrTiO3 Heterostructure." Journal of Physics: Conference Series 2518, no. 1 (2023): 012019. http://dx.doi.org/10.1088/1742-6596/2518/1/012019.
Full textЧумаков, Н. К., И. А. Черных, A. Б. Давыдов та ін. "Квантовая когерентность и эффект Кондо в двумерном электронном газе магнитно-нелегированных гетероструктур AlGaN/GaN". Физика и техника полупроводников 54, № 9 (2020): 962. http://dx.doi.org/10.21883/ftp.2020.09.49840.34.
Full textShih, Chien-Fu, Liann-Be Chang, Ming-Jer Jeng, Yu-Li Hsieh, Ying-Chang Li, and Zi-Xin Ding. "GaN 2DEG Varactor-Based Impulse Suppression Module for Protection Against Malicious Electromagnetic Interference." Journal of Electronic Materials 49, no. 11 (2020): 6798–805. http://dx.doi.org/10.1007/s11664-020-08110-0.
Full textMuraguchi, Masakazu, Yoko Sakurai, Yukihiro Takada, et al. "Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure." Key Engineering Materials 470 (February 2011): 48–53. http://dx.doi.org/10.4028/www.scientific.net/kem.470.48.
Full textKumar, Avinash, and Uttam Singisetti. "Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures." Journal of Applied Physics 132, no. 20 (2022): 205701. http://dx.doi.org/10.1063/5.0109577.
Full textRodríguez, Eduardo Martín, and Estrella González R. "GaAs/AlGaAs nanoheterostructures: Simulation and application on high mobility transistors." Ingeniería e Investigación 31, no. 1 (2011): 144–53. http://dx.doi.org/10.15446/ing.investig.v31n1.20535.
Full textZavjalov, Alexey, Sergey Tikhonov, and Denis Kosyanov. "TiO2–SrTiO3 Biphase Nanoceramics as Advanced Thermoelectric Materials." Materials 12, no. 18 (2019): 2895. http://dx.doi.org/10.3390/ma12182895.
Full textSatou, Akira, and Koichi Narahara. "Numerical Characterization of Dyakonov-Shur Instability in Gated Two-Dimensional Electron Systems." International Journal of High Speed Electronics and Systems 25, no. 03n04 (2016): 1640024. http://dx.doi.org/10.1142/s0129156416400243.
Full textKaur, Amandeep, Kousik Bera, Santosh Kumar Yadav, S. M. Shivaprasad, Anushree Roy, and Subhabrata Dhar. "Understanding the origin of mobility enhancement in wedge-shaped c-GaN nanowall networks utilizing spectroscopic techniques." Journal of Applied Physics 132, no. 19 (2022): 194305. http://dx.doi.org/10.1063/5.0122101.
Full textSheu, Gene, Yu-Lin Song, Ramyasri Mogarala, Dupati Susmitha, and Kutagulla Issac. "Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation." Micromachines 13, no. 2 (2022): 169. http://dx.doi.org/10.3390/mi13020169.
Full textHuang, Angus, Sheng-Hsiung Hung, and Horng-Tay Jeng. "Strain Induced Metal–Insulator Transition of Magnetic SrRuO3 Single Layer in SrRuO3/SrTiO3 Superlattice." Applied Sciences 8, no. 11 (2018): 2151. http://dx.doi.org/10.3390/app8112151.
Full textThalhammer, Stefan, Andreas Hörner, Matthias Küß, et al. "GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm." Micromachines 13, no. 2 (2022): 147. http://dx.doi.org/10.3390/mi13020147.
Full textZIMBOVSKAYA, NATALIYA A., та JOSEPH L. BIRMAN. "DEFORMED FERMI SURFACE THEORY OF MAGNETO–ACOUSTIC RESPONSE IN MODULATED QUANTUM HALL SYSTEMS NEAR ν=1/2". International Journal of Modern Physics B 13, № 08 (1999): 859–68. http://dx.doi.org/10.1142/s0217979299000722.
Full textNiu, Di, Quan Wang, Wei Li, et al. "The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT." Micromachines 12, no. 2 (2021): 131. http://dx.doi.org/10.3390/mi12020131.
Full textFang, Yi, Ling Chen, Yuqi Liu, and Hong Wang. "Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes." Micromachines 13, no. 6 (2022): 830. http://dx.doi.org/10.3390/mi13060830.
Full textLi, J. Z., J. Li, J. Y. Lin, and H. X. Jiang. "Correlation Between Sheet Carrier Density-Mobility Product and Persistent Photoconductivity in AlGaN/GaN Modulation Doped Heterostructures." MRS Internet Journal of Nitride Semiconductor Research 5, S1 (2000): 626–32. http://dx.doi.org/10.1557/s1092578300004853.
Full textChen, Zhesheng, Jelena Sjakste, Jingwei Dong, et al. "Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe." Proceedings of the National Academy of Sciences 117, no. 36 (2020): 21962–67. http://dx.doi.org/10.1073/pnas.2008282117.
Full textYashchyshyn, Yevhen, Paweł Bajurko, Jakub Sobolewski, et al. "Graphene/AlGaN/GaN RF Switch." Micromachines 12, no. 11 (2021): 1343. http://dx.doi.org/10.3390/mi12111343.
Full textXIA, J. S., E. D. ADAMS, N. S. SULLIVAN, W. PAN, H. L. STORMER, and D. C. TSUI. "SAMPLE COOLING AND ROTATION AT ULTRA-LOW TEMPERATURES AND HIGH MAGNETIC FIELDS." International Journal of Modern Physics B 16, no. 20n22 (2002): 2986–89. http://dx.doi.org/10.1142/s0217979202013390.
Full textFauzi, Najihah, Rahil Izzati Mohd Asri, Mohamad Faiz Mohamed Omar, et al. "Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors." Micromachines 14, no. 2 (2023): 325. http://dx.doi.org/10.3390/mi14020325.
Full textMAHFOUZI, FARZAD, and BRANISLAV K. NIKOLIĆ. "HOW TO CONSTRUCT THE PROPER GAUGE-INVARIANT DENSITY MATRIX IN STEADY-STATE NONEQUILIBRIUM: APPLICATIONS TO SPIN-TRANSFER AND SPIN-ORBIT TORQUES." SPIN 03, no. 02 (2013): 1330002. http://dx.doi.org/10.1142/s2010324713300028.
Full textRaja, P. Vigneshwara, Nandha Kumar Subramani, Florent Gaillard, Mohamed Bouslama, Raphaël Sommet, and Jean-Christophe Nallatamby. "Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties." Electronics 10, no. 24 (2021): 3096. http://dx.doi.org/10.3390/electronics10243096.
Full textWang, Hongyue, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, and Yun Huang. "Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs." Micromachines 13, no. 2 (2022): 176. http://dx.doi.org/10.3390/mi13020176.
Full textDIDUCK, QUENTIN, HIROSHI IRIE, and MARTIN MARGALA. "A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (2009): 23–31. http://dx.doi.org/10.1142/s0129156409006060.
Full textZhang, Penghao, Luyu Wang, Kaiyue Zhu, et al. "Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication." Micromachines 14, no. 8 (2023): 1523. http://dx.doi.org/10.3390/mi14081523.
Full textWang, Haiping, Haifan You, Jiangui Yang, et al. "Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors." Micromachines 13, no. 12 (2022): 2210. http://dx.doi.org/10.3390/mi13122210.
Full textSun, Youlei, Ying Wang, Jianxiang Tang, Wenju Wang, Yifei Huang, and Xiaofei Kuang. "A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer." Micromachines 10, no. 2 (2019): 91. http://dx.doi.org/10.3390/mi10020091.
Full textZhang, Peng, Patrick Wong, Yang Zhou, John D. Albrecht, Matt Hodek, and David Smithe. "Space charge waves in a two-dimensional electron gas." Journal of Applied Physics 131, no. 14 (2022): 144302. http://dx.doi.org/10.1063/5.0085104.
Full textASHKINADZE, B. M., E. LINDER, E. COHEN, and L. N. PFEIFFER. "MICROWAVE-MODULATED PHOTOLUMINESCENCE OF A TWO-DIMENSIONAL ELECTRON GAS." International Journal of Modern Physics B 21, no. 08n09 (2007): 1541–48. http://dx.doi.org/10.1142/s0217979207043166.
Full textLee, Sang Woon. "Two-Dimensional Electron Gas at SrTiO3-Based Oxide Heterostructures via Atomic Layer Deposition." Journal of Nanomaterials 2016 (2016): 1–9. http://dx.doi.org/10.1155/2016/1671390.
Full textXu, W. "Dynamical Properties of a Terahertz Driven Two-dimensional Electron Gas." Australian Journal of Physics 53, no. 1 (2000): 87. http://dx.doi.org/10.1071/ph99041.
Full textFeng, Qian, Peng Shi, Jie Zhao, et al. "Transport Properties of Two-Dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures." Advanced Materials Research 873 (December 2013): 777–82. http://dx.doi.org/10.4028/www.scientific.net/amr.873.777.
Full textVYURKOV, VLADIMIR, ANDREY VETROV, and VICTOR RYZHII. "PSEUDO-GAP AND SPIN POLARIZATION IN A TWO-DIMENSIONAL ELECTRON GAS." International Journal of Nanoscience 02, no. 06 (2003): 619–24. http://dx.doi.org/10.1142/s0219581x03001747.
Full textCHEBOTAREV, ANDREY, and GALINA CHEBOTAREVA. "CYCLOTRON RESONANCE VANISHING EFFECT AND THz DETECTION." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 959–69. http://dx.doi.org/10.1142/s0129156408005916.
Full textZhou, Zhang-Wei, Jiu-Xun Sun, and Muhammad Ammar Khan. "Accurate ground-state variational wavefunction for the two-dimensional electron gas." International Journal of Modern Physics B 28, no. 21 (2014): 1450148. http://dx.doi.org/10.1142/s0217979214501483.
Full textFossum, E. R., J. I. Song, and D. V. Rossi. "Two-dimensional electron gas charged-coupled devices (2DEG-CCD's)." IEEE Transactions on Electron Devices 38, no. 5 (1991): 1182–92. http://dx.doi.org/10.1109/16.78396.
Full textUsagawa, Toshiyuki, and Nobuko Mishima Araki. "Device analysis of two-dimensional electron gas (2DEG)FET." Electronics and Communications in Japan (Part II: Electronics) 71, no. 4 (1988): 59–71. http://dx.doi.org/10.1002/ecjb.4420710408.
Full textWANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.
Full textPHONG, TRAN CONG, VO THANH LAM, and LUONG VAN TUNG. "CALCULATION OF THE INTENSITY-DEPENDENT ABSORPTION SPECTRUM IN TWO-DIMENSIONAL ELECTRON SYSTEMS." Modern Physics Letters B 25, no. 11 (2011): 863–72. http://dx.doi.org/10.1142/s0217984911026061.
Full textRathore, Saad Ullah, Sima Dimitrijev, Hamid Amini Moghadam, and Faisal Mohd-Yasin. "Equations for the Electron Density of the Two-Dimensional Electron Gas in Realistic AlGaN/GaN Heterostructures." Nanomanufacturing 1, no. 3 (2021): 171–75. http://dx.doi.org/10.3390/nanomanufacturing1030012.
Full textLv, Meng, Guo Lin Yu, Yong Gang Xu, Tie Lin, Ning Dai, and Jun Hao Chu. "Magnetotransport Investigations of Two-Dimensional Electron Gas for AlGaN/GaN Heterostructure." Advanced Materials Research 1058 (November 2014): 132–35. http://dx.doi.org/10.4028/www.scientific.net/amr.1058.132.
Full textYu, Chen-hui, Qing-zhou Luo, Xiang-dong Luo, and Pei-sheng Liu. "Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaN/GaN HEMTs." Scientific World Journal 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/931980.
Full textNakata, H., K. Fujii, M. Saitoh, and T. Ohyama. "Photoluminescence of Two-Dimensional Electron System in Modulation-Doped GaAs Quantum Well." International Journal of Modern Physics B 15, no. 28n30 (2001): 3897–900. http://dx.doi.org/10.1142/s0217979201008949.
Full textSharbati, Samaneh, Iman Gharibshahian, Thomas Ebel, Ali A. Orouji, and Wulf-Toke Franke. "Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors." Journal of Electronic Materials 50, no. 7 (2021): 3923–29. http://dx.doi.org/10.1007/s11664-021-08842-7.
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