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Academic literature on the topic 'Two Diode'

Author: Grafiati

Published: 4 June 2025

Last updated: 23 June 2025

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Journal articles on the topic "Two Diode"

1

Bayer, Christoph Friedrich, Eberhard Bär, Birgit Kallinger, and Patrick Berwian. "Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA." Materials Science Forum 821-823 (June 2015): 616–19. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.616.

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This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al2O3, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (AlN, 48/96 diodes) and 123 °C/144 °C (Al2O3, 48/96 diodes). Assuming a constant applied voltage, a variance of ±0.5 V of the characteristic curve (forward voltage versus current) due to variations in the production process was considered fork single diodes. For a shift of +0.5 V for a single diode, the maximum temperature difference to the cooler temperature becomes approximately twice the original difference. Additionally, the operation under constant current (7.1 A, 10.2 A, 14.2 A) was studied including single diode failure. For single diode failure, the resulting change of the maximum temperature would be less than 3 %.

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Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.

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We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.

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Zozulia, V., O. Botsula, and K. Prykhodko. "A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN." Radio physics and radio astronomy 29, no. 4 (2024): 317–26. https://doi.org/10.15407/rpra29.04.317.

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Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a semiconductor element based on a graded-gap GaInAs layer electrically connected to the anode. The work seeks to assess the oscillation efficiency and the maximum output power of the diode oscillator loaded with a single-circuit resonator, determine the oscillation frequency cut-off, and estimate how the energy and frequency characteristics of the diode are influenced by the impact ionization and GaInAs spatial distribution in the graded-gap layer. Methods and Methodology. The carrier transport processes in the diode are simulated using a two-dimensional model, the particle ensemble Monte Carlo method, and the full geometric multigrid method to determine the electric fi eld distribution in the diode. Results. The characteristics of direct-current diodes have been obtained, along with frequency dependences of the oscillation efficiency and output power of based on them oscillators in a range of ASB parameters. The effect that the impact ionization and the GaInAs spatial distribution in the graded-gap layer exert on the maximum power of the alternating current at frequencies above 180 GHz has been analyzed. A possibility has been shown to generate alternating electric currents at frequencies up to 300 GHz, with the efficiency of the oscillators upon the examined ASB-diodes being two to three times higher than the efficiency of oscillators upon conventional GaAs-based planar diodes. Conclusions. It has been confirmed that ASB-diodes hold much promise for the alternating current generation at frequencies up to 300 GHz. The ASB application increases the output power of the device and extends the frequency range compared to the ordinary planar diode. Th e impact ionization in the graded-gap layer improves the diode characteristics but is not the decisive factor. The efficiency and the output power of the diode oscillator are most exerted by the ASB position relative to the diode electrodes. Diodes with the ASB located closer the cathode provide a larger oscillation power. The ASB position closer to the anode yields higher frequencies.

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Vandevender, J. P., S. A. Slutz, D. B. Seidel, et al. "PBFA II ion diode theory and implications." Laser and Particle Beams 5, no. 3 (1987): 439–49. http://dx.doi.org/10.1017/s0263034600002925.

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Fully electromagnetic, relativistic, two-dimensional, particle-in-cell (PIC) simulations of barrel-type and extractor-type Applied-B ion diodes have increased our confidence in the design of present and future diodes for the Particle Beam Fusion Accelerator II (PBFA II). In addition, the data from various experiments on Pro to I, Proto II, and PBFA I Applied-B ion diodes are inconsistent with previous models of diode operation, based on anode-cathode gap closure from expanding plasmas. A new model has been devised and applied to the PBFA II diode to explain the diode impedance and its time history, and to suggest methods for controlling the impedance.

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Martínez-Angeles, Wendy Liliana, Orfil González-Reynoso, Gregorio Guadalupe Carbajal-Arizaga, and Mario Alberto García-Ramírez. "Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2." Electronics 13, no. 20 (2024): 4008. http://dx.doi.org/10.3390/electronics13204008.

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This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices.

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Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, et al. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities." Nanomaterials 15, no. 2 (2025): 112. https://doi.org/10.3390/nano15020112.

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We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power).

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Amin, Tamzeed B., James M. Mangum, Md R. Kabir, et al. "Transient Thermal Energy Harvesting at a Single Temperature Using Nonlinearity." Entropy 27, no. 4 (2025): 374. https://doi.org/10.3390/e27040374.

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The authors present an in-depth theoretical study of two nonlinear circuits capable of transient thermal energy harvesting at one temperature. The first circuit has a storage capacitor and diode connected in series. The second circuit has three storage capacitors, and two diodes arranged for full wave rectification. The authors solve both Ito–Langevin and Fokker–Planck equations for both circuits using a large parameter space including capacitance values and diode quality. Surprisingly, using diodes one can harvest thermal energy at a single temperature by charging capacitors. However, this is a transient phenomenon. In equilibrium, the capacitor charge is zero, and this solution alone satisfies the second law of thermodynamics. The authors found that higher quality diodes provide more stored charge and longer lifetimes. Harvesting thermal energy from the ambient environment using diode nonlinearity requires capacitors to be charged but then disconnected from the circuit before they have time to discharge.

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Kasali, Suraju Olawale, Jose Ordonez-Miranda, Kamal Alaili, and Karl Joulain. "Spherical and cylindrical conductive thermal diodes based on two phase-change materials." Zeitschrift für Naturforschung A 77, no. 2 (2021): 181–90. http://dx.doi.org/10.1515/zna-2021-0170.

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Abstract We theoretically studied and optimized the thermal rectification of spherical and cylindrical conductive thermal diodes operating with two phase-change materials (PCMs), whose thermal conductivities significantly changes in a narrow interval of temperatures. This is done by deriving simple analytical expressions for the heat flows, temperature profiles and rectification factors of both diodes. It is shown that diode geometry has a significant impact on the heat flows and temperature profiles, but not so much on the thermal diode rectification factor. Optimal rectification factors of 63.5 and 63.2% are obtained for the spherical and cylindrical thermal diodes operating between the terminals of VO2 and polyethylene with a temperature difference of 150 K spanning the metal–insulator transition of both PCMs. These similar rectification factors could be enhanced even more with a phase-change material exhibiting higher contrast thermal conductivity than the ones in the present study. The obtained results can thus be useful to guide the development of PCMs capable of optimizing the rectification of conductive heat flows with different geometries.

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9

Bulyarskiy S. V., Belov V. S., Gusarov G. G., Lakalin A.V., Litvinova K. I., and Orlov A. P. "Determining the mechanisms of current flow in structures of two-layer dielectrics." Semiconductors 57, no. 2 (2023): 124. http://dx.doi.org/10.21883/sc.2023.02.55958.3545.

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Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the diode. In this paper, the solution of the above problems is presented on the example of the Al-Al2O3-Ta2O5-Ni diode. The authors showed how one can divide the current-voltage characteristic into components, calculate potential barriers at the boundaries of metals with contacting dielectrics, and determine the concentration and energy characteristics of structural defects in dielectrics. Keywords: metal-insulator-metal diodes, current-voltage characteristics, Poole-Frenkel effect, currents of thermionic and thermal field emission, currents limited by space charge.

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10

Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (2021): 2802. http://dx.doi.org/10.3390/electronics10222802.

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Dissertations / Theses on the topic "Two Diode"

1

Elder, Ian F. "Diode-pumped two micron solid-state lasers." Thesis, University of Strathclyde, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.284812.

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Virte, Martin. "Two-mode dynamics and switching in quantum dot lasers." Thesis, Supélec, 2014. http://www.theses.fr/2014SUPL0020/document.

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Dans cette thèse, j'étudie la dynamique non linéaire résultant d’une compétition entre deux modes dans des systèmes lasers à boites quantiques.D’abord, je considère le cas de la compétition entre deux modes de polarisation apparaissant dans les diodes laser nanostructurées à cavité verticale et émettant par la surface (VCSELs). Il est connu que ces composants peuvent avoir une polarisation instable menant à des dynamiques riches. Récemment, un surprenant saut de mode entre deux états polarisés elliptiquement a été récemment découvert dans les VCSELs à boites quantiques. Ce comportement montre des propriétés intrigantes qui nécessitent une interprétation alternative. Dans cette thèse, je montre que ce comportement dynamique peut-être reproduit en utilisant le modèle spin-flip (SFM). En particulier je démontre et confirme expérimentalement que les sauts de modes sont en réalité des fluctuations chaotiques de faible dimension : un chaos en polarisation. Je démontre ensuite la pertinence de la dynamique chaotique observée pour les applications exploitant le chaos optique, en réalisant un générateur de nombres aléatoires à grande vitesse basé sur le chaos en polarisation.Deuxièmement, j'étudie les effet d'une rétroaction optique à délai sur les lasers à boites quantiques émettant simultanément depuis l'état fondamental et le premier état excité. Je clarifie l'impact the cette rétroaction optique ainsi que les mécanismes et bifurcations correspondantes. Je montre théoriquement qu'une rétroaction optique favorise globalement l'émission par l'état fondamental, mais aussi qu'un tel montage peut être utilisé pour commuter entre ces deux modes d'émission lorsque l'on change le taux ou le délai de la rétroaction. Enfin, je confirme ces observations expérimentalement, en rapportant des commutations entre l'état fondamental et l'état excité<br>In this thesis, I study the nonlinear dynamics induced by the competition between two modes in quantum dot laser systems.First, I focus on the competition between polarization modes that takes place in quantum dot vertical-cavity surface-emitting lasers (VCSELs). It is well-known that these devices can exhibit polarization instabilities leading to rich dynamical evolution. Recently, a new peculiar random-like hopping between two non-orthogonal elliptically polarized states has been highlighted in QD VCSELs. This behavior shows intriguing features which clearly call for a different interpretation. In this thesis, I show that the dynamical behavior reported experimentally can accurately be reproduced within the spin-flip model (SFM) framework. In particular, I demonstrate and confirm experimentally that the peculiar random-like hoppings are in fact deterministic low-dimensional chaotic fluctuations, i.e. ``Polarization Chaos''. I then make a proof-of-concept demonstration of a high-speed random bit generator based on polarization chaos, hence demonstrating that the chaotic dynamics uncovered is relevant for optical chaos-based applications.Secondly, I investigate the effects of an external optical feedback on quantum dot lasers emitting simultaneously from the ground and the excited states. I bring new light on the impact of optical feedback and the corresponding mechanisms and bifurcations. I highlight theoretically that optical feedback globally favors the ground state emission, but also that it can be used to switch from one mode to the other when changing the feedback rate and/or the time-delay. In addition, I experimentally report switching between the ground and excited states when varying the external cavity length at the micrometer scale, which supports the theoretical predictions

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Adam, Grain Philip. "Quasi two-level operation of a five-level diode clamped converter." Thesis, University of Strathclyde, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442006.

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Dumond, Julien Xavier Pierre [Verfasser], and A. [Akademischer Betreuer] Class. "Fluidic diode for critical two-phase flows / Julien Xavier Pierre Dumond. Betreuer: A. Class." Karlsruhe : KIT-Bibliothek, 2012. http://d-nb.info/1030315973/34.

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Erchak, Alexei A. (Alexei Andrew) 1976. "Design and fabrication of a light emitting diode using a two-dimensional photonic crystal." Thesis, Massachusetts Institute of Technology, 1999. http://hdl.handle.net/1721.1/9555.

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Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.<br>Includes bibliographical references (leaves 51-52).<br>Photonic Crystals are the optical analog of semiconductor crystals. A periodic variation in the dielectric constant may give rise to a photonic bandgap that forbids the propagation of certain frequency light in one, two, and three dimensions. A two dimensional photonic crystal may be used to directly modify the spontaneous emission of a light-emitting diode by eliminating the coupling of light to guided modes. In this work, the design and fabrication of a two-dimensional photonic crystal light-emitting diode with an emission wavelength of 980 nm is discussed. The 980 nm emission wavelength requires the fabrication of l 00 nm feature sizes in a GaAs-based materials system. The nanoscale feature sizes and various III-V materials employed present many fabrication challenges.<br>by Alexei A. Erchak.<br>M.Eng.

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Qiu, Fengjing. "Analog very large scale integrated circuits design of two-phase and multi-phase voltage doublers with frequency regulation." Ohio : Ohio University, 1999. http://www.ohiolink.edu/etd/view.cgi?ohiou1175632756.

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Reiss, Boris. "Development of a two-tone frequency modulation tunable diode laser absorption spectrometer (TTFM-TDLAS) for measuring methane fluxes." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape3/PQDD_0016/MQ56199.pdf.

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Bailey, Hope P. "CHEMOMETRIC ANALYSIS OF COMPREHENSIVE TWO-DIMENSIONAL LIQUID CHROMATOGRAPHIC-DIODE ARRAY DETECTION DATA: PEAK RESOLUTION, QUANTIFICATION AND RAPID SCREENING." VCU Scholars Compass, 2012. http://scholarscompass.vcu.edu/etd/2924.

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This research project sought to explore, compare and develop chemometric methods with the goal of resolving chromatographically overlapped peaks though the use of spectral information gained from the four-way data sets associated with comprehensive two-dimensional liquid chromatography with diode array detection (LC ´ LC-DAD). A chemometric method combining iterative key set factor analysis (IKSFA) and multivariate curve resolution-alternating least squares (MCR-ALS) was developed. In the section of urine data analyzed, over 50 peaks were found, with 18 visually observable and 32 additional compounds found only after application of the chemometric method. Upon successful chemometric resolution of chromatographically overlapped peaks, accurate and precise quantification was then necessary. Of the compared methods for quantification, the manual baseline method was determined to offer the best precisions. Of the 50 found peaks from the urine analysis, 34 were successfully quantified using the manual baseline method with percent relative standard deviations ranging from 0.09 to 16. The accuracy of quantification was then investigated by the analysis of wastewater treatment plant effluent (WWTPE) samples. The chemometrically determined concentration of the unknown phenytoin sample was found to not exhibit a significant difference from the result obtained by the LC-MS/MS reference method, and the precision of the IKSFA-ALS method was better than that of the precision of the LC-MS/MS analysis. Chromatographic factors (data complexity, large dynamic range, retention time shifting, chromatographic and spectral peak overlap and background removal, were all found to affect the quantification results. The last part of this work focused on rapid screening methods that were capable of locating peaks between samples that exhibited significant differences in concentration. The aim here was to reduce the amount of data required to be resolved and quantified to only those peaks that were of interest. This would then reduce the time required to analyze large, complex samples by eliminating the need to first quantify all peaks in a given sample for many different samples. Both the similarity index (SI) method and the Fisher ratio (FR) method were found to fulfill this requirement in a rapid means of screening fifteen wine samples.

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Burns, Iain Stewart. "A sensor for combustion thermometry based on blue diode lasers." Thesis, University of Cambridge, 2006. https://www.repository.cam.ac.uk/handle/1810/244070.

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Spatially-resolved measurements of flame temperature have been demonstrated with diode lasers for the first time. The technique is based on the use of blue diode lasers to perform laser-induced fluorescence on indium atoms seeded to the flame. Temperature measurements have been carried out in laminar flames both by the two-line atomic fluorescence technique, and also by a novel line-shape thermometry method that requires the use of only a single diode laser. The first part of this work involved the development of blue extended cavity diode lasers with favourable tuning properties. Two custom-designed extended cavity diode lasers (ECDL) have been built, emitting at wavelengths of around 410 nm and 451 nm respectively. These devices are capable of mode-hop free tuning over ranges greater than 90 GHz. The performance of these devices exceeds that of commercially available systems and a patent application has been filed. High resolution fluorescence spectroscopy has been performed on both the 52P1/2→62S1/2 and 52P3/2→62S1/2 transitions of indium atoms seeded at trace quantities into atmospheric pressure flames. In both cases, the spectra obtained show excellent agreement with a theoretical fit based on the individual hyperfine components of the transition. The two ECDLs have been used to build a sensor for the measurement of temperature in combustion systems. It is much simpler, more compact, less expensive, and more versatile than any previously existing device. The two lasers were used sequentially to probe indium atoms seeded to the flame. The ratio of the resulting fluorescence signals is related to the relative populations in the two sub-levels of the spin-orbit split ground state of indium, and thus to the temperature. Temperature measurements have been successfully performed in a laminar flame and the data thus obtained do not need to be corrected by any ‘calibration constant’. This novel thermometry technique offers a robust alternative to traditional methods involving bulky high power lasers. A further development has been made by demonstrating a fluorescence line-shape thermometry technique requiring only a single diode laser excitation source. Progress has been made towards the goal of rapid temperature measurements appropriate to the study of turbulent flames. This involved the development of a simple technique for actively locking the wavelength of the blue diode laser to a resonance line of the tellurium molecule. A high-speed thermometry system would work by rapidly switching between the two locked laser beams using an optical modulator.

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Ullah, Md Barkat. "Growth of Zn-polar BeMgZnO/ZnO heterostructure with two dimensional electron gas (2DEG) and fabrication of silver Schottky diode on BeMgZnO/ZnO heterostructure." VCU Scholars Compass, 2017. http://scholarscompass.vcu.edu/etd/4992.

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Title of dissertation: GROWTH OF Zn POLAR BeMgZnO/ZnO HETEROSTRUCTURE WITH TWO DIMENSIONAL ELECTRON GAS (2DEG) AND FABRICATION OF SILVER SCHOTTKY DIODE ON BeMgZnO/ZnO HETEROSTRUCTURE By Md Barkat Ullah, Ph.D A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering at Virginia Commonwealth University. Virginia Commonwealth University,2017 Major Director: Dr. Hadis Morkoç, Professor, Electrical and Computer Engineering This thesis focuses on growth of Zn polar BeMgZnO/ZnO heterostructure on GaN/sapphire template with two dimensional electron gas (2DEG) for the application of UV photodetector/emitter and high speed electronics. The motivation of using BeMgZnO as a barrier layer originates from the need to reach plasmon-LO phonon resonance in order to obtain minimum longitudinal optical (LO) phonon lifetime. Presence of 2DEG was realized in BeMgZnO/ZnO heterostructure only when the Zn polarity was achieved during the nucleation growth of ZnO on GaN/sapphire template. It was found that, polarity of ZnO on (0001) GaN/sapphire template can be controlled by the oxygen to Zn ratio used during the nucleation growth. To obtain high structural and optical quality of BeMgZnO quaternary alloy, growth kinetics of BeMgZnO layer has been studied at the temperature range from 450°C-500°C. We have achieved the growth of single crystal Be.03Mg00.15ZnO alloy at 500 °C, more than 100°C higher compared to what reported in literature, on the (0001) GaN/sapphire template through the control of Zn/(Be+Mg) flux ratio. We have also observed a thermodynamic limitation of Mg incorporation into the wurtzite BeMgZnO alloy where the excess Mg adatom accumulated in the growing surface as a MgO rich cluster. Two dimensional electron gas with high (1.2×1013cm-2) sheet carrier density was achieved at the Be0.03Mg0.41ZnO/ZnO interface through strain engineering by incorporating Be into MgZnO ternary alloy. To obtain the similar sheet carrier density it would require above 60% of Mg in MgZnO/ZnO heterostructure with reduced structural quality. A systematic comparison of sheet carrier density has been made with the already reported results from Zn polar MgZnO/ZnO heterostructure as well as with the theoretical calculation. Silver Schottky diode on Be0.02Mg0.26ZnO/ZnO heterostructure with barrier height 1.07 eV and ideality factor 1.22 was obtained with 8 order of rectification ratio. The temperature-dependent electrical characteristics were studied by using temperature dependent current-voltage (I-V) measurements. Richardson constant value of 34.8 Acm-2K-2 was found experimentally which was close to the theoretical value of 36 Acm-2K-2 known for Be0.02Mg0.26ZnO alloy.

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Books on the topic "Two Diode"

1

Center, Langley Research, ed. Comparison of thermal coefficients for two microwave detectors: Diode/voltage-to-frequency converter and flash analog-to-digital converter. National Aeronautics and Space Administration, Langley Research Center, 2001.

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United States. National Aeronautics and Space Administration., ed. Sub-Hertz relative frequency stabilization of two diode laser pumped Nd:YAG lasers locked to a Fabry-Perot interferometer: A final report to NASA for the SUNLITE program. National Aeronautics and Space Administration, 1990.

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United States. National Aeronautics and Space Administration., ed. Sub-Hertz relative frequency stabilization of two diode laser pumped Nd:YAG lasers locked to a Fabry-Perot interferometer: A final report to NASA for the SUNLITE program. National Aeronautics and Space Administration, 1990.

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United States. National Aeronautics and Space Administration., ed. Advanced water vapor lidar detection system: Final report. National Aeronautics and Space Administration, 1998.

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Vuillaume, D. Molecular electronics based on self-assembled monolayers. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.9.

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This article considers molecular electronics based on self-assembled monolayers. It begins with a brief overview of the nanofabrication of molecular devices, followed by a discussion of the electronic properties of several basic devices, from simple molecules such as molecular tunnel junctions and molecular semiconducting wires, to more complex ones such as molecular rectifying diodes. It also describes molecular switches and memories, focusing on three approaches called ‘conformational memory’, ‘charge-based memory’ and ‘RTD-based memory’ (RTD is resonant tunnelling diode). It shows that memory can be implemented from resonant tunnelling diodes following cell architecture already used for semiconductor devices. The article concludes with a review of molecular transistors.

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Tutarsızlığın iz sürücüsü: Dilde, düşüncede : Teo Grünberg'e armağan. İmge, 2013.

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National Academies of Sciences, Engineering, and Medicine. Assessment of Solid-State Lighting, Phase Two. National Academies Press, 2017.

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Jurgen, Ronald, ed. Electronic Instrument Panel Displays. SAE International, 1998. http://dx.doi.org/10.4271/9780768002270.

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Electronic instrument panel displays systems covers the many technical considerations of instrument panel display systems including brightness, contrast, temperature sensitivity, space requirements, color capabilities and human factors concepts. As part of the Progress in Technology Electronics Series, this book contains 40 technical papers written in the last eleven years on the progress of instrument panel displays and their corresponding electronic systems. Papers are grouped according to display technology and present the most recent advances in that area plus several of historical interest. Electronic Instrument Panel Display Systems is divided into ten sections: vacuum fluorescent displays; fluorescent indicator panels; liquid crystal displays; electroluminescent displays; light emitting diode displays; electroluminescent displays; light emitting diode displays; cathode ray tube displays; head up displays; virtual and holographic displays; reconfigurable displays; and human factors considerations.

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Segal, David. Let There Be Lights. Oxford University Press, 2017. http://dx.doi.org/10.1093/oso/9780198804079.003.0006.

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Chapter 6 describes solid-state lighting. It covers electroluminescence light-emitting diodes, quantum dots, organic light-emitting diodes (OLEDs), liquid crystals and liquid crystal displays. The importance of synthesis of high purity semiconductors for lighting applications is stressed. Use of materials to produce clear white light is outlined. Association structures in solution such as micelles and liquid crystals are described.

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Segal, David. One Hundred Patents That Shaped the Modern World. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198834311.001.0001.

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The Internet has allowed people to access information that previously was difficult to obtain. It is important to know the information is true and accurate and does not represent ‘fake news’ or alternative facts. Patents describe inventions and contain accurate information, as patents are examined and their accuracy can be challenged. This book shows how patents and the inventions they describe have shaped the modern world, that is the world in the twenty-first century. Patent documents that date from the mid-nineteenth century to the present time are used in the text and the subject matter covers many technical areas: for example, Morse code, the diode, triode, transistors, television, frozen foods, ring-pulls for soft drink cans, board games such as Monopoly, gene editing, metamaterials, MRI, computerised tomography, insulin and monoclonal antibodies such as Herceptin. Up to a page of text is used for each entry and the text is backed up by drawings from patent documents. Patent numbers are included to allow interested readers to trace the documents. Inventions described in the patents are placed in a historical perspective. For example, the role of the cavity magnetron and radar are described in the context of the Second World War, whereas the diode is discussed in the development of broadcasting at the beginning of the twentieth century. Entries cover examples from life sciences, engineering and physical sciences in the modern world.

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Book chapters on the topic "Two Diode"

1

Islam, Noorul, A. Q. Ansari, and L. Navinkumar Rao. "Performance Analysis of PV Cell Using One Diode and Two Diode Model." In Lecture Notes in Electrical Engineering. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0662-4_5.

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Martin, Alexander, Patrick Baus, and Gerhard Birkl. "External Cavity Diode Laser Setup with Two Interference Filters." In Exploring the World with the Laser. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-64346-5_41.

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Ohmura, K., K. Hishida, and M. Maeda. "A Multi-Angle Laser-Two-Focus Velocimeter Using Photo Diode Arrays." In Laser Techniques and Applications in Fluid Mechanics. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-02885-8_5.

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Aissaoui, A., N. Belhaouas, F. Hadjrioua, K. Bakria, and I. Aloui. "Parameter Extraction of Two-Diode Solar PV Model Using ANN–GA Approach." In Artificial Intelligence and Renewables Towards an Energy Transition. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-63846-7_56.

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Hazra, Saumyadip, Souvik Ganguli, and Suman Lata Tripathi. "Parameter Identification of a New Reverse Two-Diode Model by Moth Flame Optimizer." In Introduction to AI Techniques for Renewable Energy Systems. CRC Press, 2021. http://dx.doi.org/10.1201/9781003104445-22.

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Svoboda, K., W. Denk, W. W. Knox, and S. Tsuda. "Two-Photon Excitation Scanning Microscopy with a Compact SBR-Modelocked Diode-Pumped Cr:LiSAF Laser." In Springer Series in Chemical Physics. Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80314-7_56.

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Chuquimarca, Luis, Ximena Acaro, Alfonso Gunsha, Luis Villamagua, and David Sánchez. "Two-Diode Model Parameter Evaluation from Dark Characteristics of Back-Contact Back-Junction Solar Cells." In Advances in Intelligent Systems and Computing. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-02351-5_24.

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Lacadée, Camille. "Would Have Been...An Inventory." In The Funambulist Papers, Volume 1. punctum books, 2013. https://doi.org/10.21983/p3.0053.1.37.

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a dark laterite monolith near a library thirty days / twenty-nine people of diverse nationalities and age still to be confirmedan old man collecting booksa library counting exactly seventy thousand books in thirty-six different languages / some unknown languagestwenty-nine return tickets forty chairs and twenty tables poorly made of recycled pine wood a twenty-one point one megapixels full frame complementary metal-oxide-semiconductor digital single-lens reflex camera body with two flash cards of thirty-two gigabits and two batteries / a lens with bel-lows mechanism specially customized for this body / a good tripod with film head a light-emitting diode camera yellow to white light / a cheap tripod for the lighta five in one foldable elliptic white and silver reflector a short shotgun condenser microphone with cable and a smaller ste-reo condenser microphone / a twenty-four bits uncompressed and built-in stereo microphones sound recorder with four different wave-form audio file format modes an acoustically transparent synthetic fur material with soft long hairs

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Chernikov, S. V., J. R. Taylor, P. V. Mamyshev, and E. M. Dianov. "Generation of a Soliton Pulse Train in an Optical Fibre Using Two CW Single-Frequency Diode Lasers." In Ultrafast Phenomena VIII. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84910-7_97.

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Winterfeld, Henning, Hermann Kohlstedt, and Martin Ziegler. "MemFlash—Floating Gate Transistors as Memristors." In Springer Series on Bio- and Neurosystems. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-36705-2_4.

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AbstractThe idea of resistive switching devices is originally based on the fact that the application of electric fields changes the atomic structure locally and thus also the electronic structure of the material. This leads globally to a sustained change in the resistance of the material layer, which is generally referred to as resistive switching. In resistive switching devices, these atomic reconfigurations are reversible and allow the state to be maintained for a long time, which is why the devices are referred to as memristive devices (also named Memristor). Memristive devices can be realized as two terminal devices in a metal-insulator-metal structure. In the MemFlash cell, there is no atomic rearrangement in the device and therefore is a purely electronic based switching device. The basic components of the MemFlash cell are floating gate transistors, which are reduced from a three-terminal to a two-terminal device by means of a diode-like wiring scheme and thus exhibit memristive switching behavior. In this book chapter, the MemFlash cell is introduced.

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Conference papers on the topic "Two Diode"

1

Wannapasert, Padungsak, Santipont Ananwattanaporn, and Atthapol Ngaopitakkul. "Evaluation of Light-Emitting Diode Luminaire For Two-Lanes Roadway Lighting System." In 2024 11th International Conference on Power and Energy Systems Engineering (CPESE). IEEE, 2024. https://doi.org/10.1109/cpese62584.2024.10840929.

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Kuritsyn, Yu A., G. N. Makarov, V. R. Mironenko, and I. Pak. "Collisionless excitation of NH 3 molecules via one- and two-photon transitions by multimode radiation of TEA CO 2 laser." In Tunable Diode Laser Applications, edited by Alexander I. Nadezhdinskii and Alexander M. Prokhorov. SPIE, 1992. http://dx.doi.org/10.1117/12.58679.

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Walpole, J. N., Z. L. Liau, and V. Diadiuk. "Monolithic Two-Dimensional Diode Laser Arrays." In Technical Symposium Southeast, edited by Richard J. Becherer and Robert C. Harney. SPIE, 1987. http://dx.doi.org/10.1117/12.940576.

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Alrahim Shannan, Nahla Mohamed Abd, Nor Zaihar Yahaya, and Balbir Singh. "Single-diode model and two-diode model of PV modules: A comparison." In 2013 IEEE International Conference on Control System, Computing and Engineering (ICCSCE). IEEE, 2013. http://dx.doi.org/10.1109/iccsce.2013.6719960.

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Christian, William R., Paul H. Beckwith, and Ian McMichael. "Coherent Summation of Injection Locked Single Mode Diode Lasers by Two-Beam Coupling in BaTiO3." In OSA Annual Meeting. Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.pdp19.

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The photorefractive effect in electro-optic crystals has been extensively studied for many applications. These include real-time holography, optical data storage, and phase-conjugate wavefront generation. Recently, interest has grown in the use of two-wave mixing to produce nonreciprocal energy transfer between two beams. Both theoretical and experimental evidence indicate that the energy transfer occurs without any phase crosstalk. This unique characteristic allows coherent combination of light from two (or more) injection locked lasers whose relative phases cannot be controlled. We describe and demonstrate he use of two-wave mixing in photorefractive BaTiO3 to coherently combine the outputs from two locked, single mode diode lasers operating near 830 nm. Neglecting Fresnel and absorption loses, transfer of over 70% of the power in one beam to the other has been observed using this method. In addition to the coherent summation of light from two single element laser diodes, the results of experiments on combining the output of an injection locked multi-element laser diode array with light from a single element laser diode will be presented.

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Hoffmann, S., and M. Hofmann. "Terahertz generation with two color diode lasers." In 2005 IEEE LEOS Annual Meeting. IEEE, 2005. http://dx.doi.org/10.1109/leos.2005.1547934.

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Simmons, W. W., E. Anderson, L. Eaton, et al. "Monolithic Two-Dimensional Arrays Of Diode Lasers." In OE/LASE '89, 15-20 Jan., Los Angeles. CA, edited by Luis Figueroa. SPIE, 1989. http://dx.doi.org/10.1117/12.976355.

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Shnitnikov, A. S., and S. M. Mikhaylov. "Simulation of a two-diode microwave limiter." In 2000 10th International Crimean Microwave Conference. Microwave and Telecommunication Technology. Conference Proceedings. IEEE, 2000. http://dx.doi.org/10.1109/crmico.2000.1255885.

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Kuan, C. H., Ray-Ming Lin, Shiang-Feng Tang, and Tai-Ping Sun. "Investigation of temperature dependence in the dark current of InAs diode detectors." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1996. http://dx.doi.org/10.1364/cleo_europe.1996.cthi8.

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InAs diode detectors are good for ~3 pm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, we have studied the I-V characteristics of the PIN (SI066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T. The two diodes are grown on the InAs N-type substrates. The doping densities of the PIN diode are 3×1017 cm-3 and 6.7×1016 cm-3 for P and N types respectively, and the thickness of the intrinsic layer is 0.14µm. Those of the PN diode are 1 × 1016 cm-3 and 1×1016 cm-3. The mesa shape of the diodes is a circle with a radius of 150µm.

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Scifres, Donald. "Diode laser arrays." In OSA Annual Meeting. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.my1.

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High-power laser-diode arrays have now become commercially available at cw power levels of 10 W and at quasi-cw power levels of as great as 250 W. This tutorial will address the operation and limitations of high-power laser diodes, including physics of operation, lasing wavelength, reliability, power limits, and modulation rates. New technologies, such as two-dimensional surface emitters and coherent laser arrays, will also be described, as will prospects for future developments and improvements.

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Reports on the topic "Two Diode"

1

Dave, Foram, Mahmood Ali, Mozaffar Mokhtari, Richard Sherlock, Alistair Mcllhagger, and David Tormey. Effect of pigments on laser beam transmission in diode laser transmission welding of poly(propylene). Universidad de los Andes, 2024. https://doi.org/10.51573/andes.pps39.gs.pc.4.

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Welding technologies are state of the art for joining polymer composites, with one of the two joining parts considered laser transmissive (LT) and the other laser absorptive (LA). Pigments are often added to LT to enhance the crystallinity of the polymer matrix. However, pigments lead to internal scattering of the laser beam and the rate of transmission or the laser energy density decreases. Depending upon the type and amount of pigments added in the formulation of LT, the percentage of the laser beam transmitted, absorbed, or scattered differs. Laser welding performance depends on the laser energy available for welding after considering the losses. In the present study, optical transmission of injection molded isotactic polypropylene (iPP) samples were analyzed with a varying dosage of organic pigment (neat PP, 2%, 3%, 4%, 5%, 6%, 8%, and 10%) using a LPKF TMG 3 transmission tester. The device uses a wavelength of 980 nm and simulates the optical radiation conditions of diode laser transmission welding (LTW). The percentage transmission varied with the sample thickness and the composition percentage of pigment. The modified Bouguer-Lambert law described the transmission energy and apparent extinction coefficient. The model was validated with the experimental value of transmittances of the samples with varying sample thicknesses of iPP. There was a decrease in the percentage of laser transmission with an increase in the pigment content of the samples. It was found that the apparent extinction coefficient is a function of the pigment levels.

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Baumgartner, Franz, Cyril Allenspach, Ebrar Özkalay, et al. Performance of Partially Shaded PV Generators Operated by Optimized Power Electronics 2024. Edited by Ulrike Jahn. International Energy Agency Photovoltaic Power Systems Programme, 2024. https://doi.org/10.69766/leof5152.

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Inhomogeneous shading on the PV generator leads to disproportionately high losses. As the potential of PV generation on roofs or façades is to be increasingly utilised in the coming decades, these cases will occur more frequently. The aim here is to provide an overview of the challenges and state-of-the-art technical solutions for partial shading. Current developments in PV engineering show that maximum performance lies in the combination between optimised module placement, the use of modules that are tolerant of shading and optimised power electronics. Shortly after the discovery of the solar cell, blocking or bypass diodes were used to solve the inhomogeneous currents of groups of solar cells arranged in series or parallel wiring. Even today, they are still the most efficient and robust solution for the majority of common shading PV applications. Due to the very high rated outputs of the solar modules and the presence of only three bypass diodes, high temperatures can occur on a locally shaded solar cell. This forces heat outputs of up to 200W or 100W in the butterfly module connection through the associated activated bypass diode, which must be dissipated by the most shaded cell. If additional small-area defects occur in this affected solar cell, hotspot peak temperatures can occur, which can lead to permanent damage to the module or the risk of fire. However, in order to prevent a third of the module output being lost in this case, four or more bypass diodes are now used in so-called shadow-tolerant PV modules. With a higher number of bypass diodes per module area, it is also possible to selectively bypass smaller, less efficient areas of the module, which leads to an increase in the module yield. The hotspot effects can also be comprehensively and robustly prevented by the small number of solar cells per bypass diode, provided the bypass diode is properly designed. The first manufacturers are beginning to place these shade-tolerant PV modules on the markets. Today, planners can also select different power electronics systems for the next step in system integration towards grid feed-in, i.e. the connection of the individual modules in the string. This is the classic series connection of all modules in the string to the input of the DC/AC string inverter (SINV), which leads to the highest yields for weak and medium shading. This applies, for example, to light shading with a chimney or a ventilation pipe, where no more than one tenth of the modules in the string are reached by the shade at the same time during the six hours around midday, even when using standard modules with only three bypass diodes. (see Table 1) With medium to heavy shading, the widely used DC/DC converters directly on the PV module (MLPE), often also called power optimisers, can be used profitably. However, the combination of shade-tolerant PV modules with conventional SINVs can often deliver comparable annual yields. However, if the optimisers are also used behind each module even with weak shading (allMLPE), they deliver less yield in total than the simple SINV, as their own DC/DC losses then have a negative impact compared to simple connectors. This only becomes apparent if the MLPE manufacturers' data sheet claims of 99% efficiency are not viable. The published measurements carried out in independent laboratories over the last four years are listed in this report, which suggest that losses are around 2% higher. As the differences in yield between the power electronics variants SINV and MLPE are usually less than four per cent in annual yield for light to medium shading, the above-mentioned real MLPE efficiency at the specific operating points plays the decisive role in planning the most efficient system. However, as the commercial PV software planning tools currently use these MLPE manufacturer specifications which are over estimated, no meaningful system comparison can be expected for these shading categories. In this report the results of annual simulations performed by some sophisticated simulation tools that take these real MLPE losses into account are discussed.

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ZARATE, NASHELY NICKOL CHAVEZ, NICOLL SARAÍ RIVERA LEDEZMA, CESAR ALONSO PONCE LOZANO, and Martin Andres Chavez Mendez. Clinical effectiveness of the infrared diode laser (810-980 nm) in conjunction with scaling and root planing in comparison with scaling and root planning alone (placebo) in the non-surgical treatment of periodontitis: a systematic review. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, 2023. http://dx.doi.org/10.37766/inplasy2023.3.0037.

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Review question / Objective: What is the efficacy of the use of diode laser (810-980 nm) in association with scaling and root planing compared to scaling and root planing alone (placebo) in the non-surgical treatment of periodontitis? Condition being studied: Periodontitis is a chronic multifactorial inflammatory disease associated with a dysbiotic biofilm and characterized by progressive destruction of the tooth-supporting apparatus, which can lead to toothloss.

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Comaskey, B. Diode array alternative to paint removal solid-state cw laser. Office of Scientific and Technical Information (OSTI), 1993. http://dx.doi.org/10.2172/10149256.

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Brar, Berinder, and Moise. Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada382086.

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Sanford, Thomas Williamlou. History of HERMES III diode to z-pinch breakthrough and beyond :. Office of Scientific and Technical Information (OSTI), 2013. http://dx.doi.org/10.2172/1088074.

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Renk, Timothy, Bryan Oliver, Mark Kiefer, et al. Characterization of Self-Magnetic Pinch (SMP) radiographic diode performance on RITS-6 at Sandia National Laboratories: 1) Diode Dynamics, DC Heating to extend Radiation Pulse. Office of Scientific and Technical Information (OSTI), 2021. http://dx.doi.org/10.2172/1829007.

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Leisher, P., R. Deri, and V. Tang. New Framework to Prevent Catastrophic Damage to Laser Diodes. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1577237.

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Hartle, Steven J., Joseph Kozol, and Frederick A. Lancaster. An Assessment of Semiconductor Diode Laser Paint Removal Applied to Fiberglass/Epoxy Substrates. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada416992.

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Brown, Michael S., Skip Williams, Chadwick D. Lindstrom, and Dominic L. Barone. Progress in Applying Tunable Diode Laser Absorption Spectroscopy to Scramjet Isolators and Combustors. Defense Technical Information Center, 2010. http://dx.doi.org/10.21236/ada522512.

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