To see the other types of publications on this topic, follow the link: Two Diode.
Journal articles on the topic 'Two Diode'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 journal articles for your research on the topic 'Two Diode.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.
1
Bayer, Christoph Friedrich, Eberhard Bär, Birgit Kallinger, and Patrick Berwian. "Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA." Materials Science Forum 821-823 (June 2015): 616–19. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.616.
Full textAbstract:
This work shows thermal simulations of a package of 48/96 high-voltage (6.5 kV/1 kA) PiN diodes. A temperature dependent heat generation for a forward voltage of 3.6 V with a realistic heat generating volume in the diode of (2.7x2.7x0.01) mm3 was used. The thermal coupling of two diodes was determined to be less than 1 % for a distance between the diodes of 10 mm. The temperature distribution for the entire module has been studied for two different ceramic insulating materials, AlN and Al2O3, as well as for two numbers of diodes, 48 and 96. This led to a maximum temperature of 106 °C/118 °C (AlN, 48/96 diodes) and 123 °C/144 °C (Al2O3, 48/96 diodes). Assuming a constant applied voltage, a variance of ±0.5 V of the characteristic curve (forward voltage versus current) due to variations in the production process was considered fork single diodes. For a shift of +0.5 V for a single diode, the maximum temperature difference to the cooler temperature becomes approximately twice the original difference. Additionally, the operation under constant current (7.1 A, 10.2 A, 14.2 A) was studied including single diode failure. For single diode failure, the resulting change of the maximum temperature would be less than 3 %.
2
Min, Seong-Ji, Michael A. Schweitz, Ngoc Thi Nguyen, and Sang-Mo Koo. "Comparison of Temperature Sensing Performance of 4H-SiC Schottky Barrier Diodes, Junction Barrier Schottky Diodes, and PiN Diodes." Journal of Nanoscience and Nanotechnology 21, no. 3 (2021): 2001–4. http://dx.doi.org/10.1166/jnn.2021.18934.
Full textAbstract:
We present a comparison between the thermal sensing behaviors of 4H-SiC Schottky barrier diodes, junction barrier Schottky diodes, and PiN diodes in a temperature range from 293 K to 573 K. The thermal sensitivity of the devices was calculated from the slope of the forward voltage versus temperature plot. At a forward current of 10 μA, the PiN diode presented the highest sensitivity peak (4.11 mV K−1), compared to the peaks of the junction barrier Schottky diode and the Schottky barrier diode (2.1 mV K−1 and 1.9 mV K−1, respectively). The minimum temperature errors of the PiN and junction barrier Schottky diodes were 0.365 K and 0.565 K, respectively, for a forward current of 80 μA±10 μA. The corresponding value for the Schottky barrier diode was 0.985 K for a forward current of 150 μA±10 μA. In contrast to Schottky diodes, the PiN diode presents a lower increase in saturation current with temperature. Therefore, the nonlinear contribution of the saturation current with respect to the forward current is negligible; this contributes to the higher sensitivity of the PiN diode, allowing for the design and fabrication of highly linear sensors that can operate in a wider temperature range than the other two diode types.
3
Zozulia, V., O. Botsula, and K. Prykhodko. "A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN." Radio physics and radio astronomy 29, no. 4 (2024): 317–26. https://doi.org/10.15407/rpra29.04.317.
Full textAbstract:
Subject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel approximately 1μm long. Its lateral surface carries a semiconductor element based on a graded-gap GaInAs layer electrically connected to the anode. The work seeks to assess the oscillation efficiency and the maximum output power of the diode oscillator loaded with a single-circuit resonator, determine the oscillation frequency cut-off, and estimate how the energy and frequency characteristics of the diode are influenced by the impact ionization and GaInAs spatial distribution in the graded-gap layer. Methods and Methodology. The carrier transport processes in the diode are simulated using a two-dimensional model, the particle ensemble Monte Carlo method, and the full geometric multigrid method to determine the electric fi eld distribution in the diode. Results. The characteristics of direct-current diodes have been obtained, along with frequency dependences of the oscillation efficiency and output power of based on them oscillators in a range of ASB parameters. The effect that the impact ionization and the GaInAs spatial distribution in the graded-gap layer exert on the maximum power of the alternating current at frequencies above 180 GHz has been analyzed. A possibility has been shown to generate alternating electric currents at frequencies up to 300 GHz, with the efficiency of the oscillators upon the examined ASB-diodes being two to three times higher than the efficiency of oscillators upon conventional GaAs-based planar diodes. Conclusions. It has been confirmed that ASB-diodes hold much promise for the alternating current generation at frequencies up to 300 GHz. The ASB application increases the output power of the device and extends the frequency range compared to the ordinary planar diode. Th e impact ionization in the graded-gap layer improves the diode characteristics but is not the decisive factor. The efficiency and the output power of the diode oscillator are most exerted by the ASB position relative to the diode electrodes. Diodes with the ASB located closer the cathode provide a larger oscillation power. The ASB position closer to the anode yields higher frequencies.
4
Vandevender, J. P., S. A. Slutz, D. B. Seidel, et al. "PBFA II ion diode theory and implications." Laser and Particle Beams 5, no. 3 (1987): 439–49. http://dx.doi.org/10.1017/s0263034600002925.
Full textAbstract:
Fully electromagnetic, relativistic, two-dimensional, particle-in-cell (PIC) simulations of barrel-type and extractor-type Applied-B ion diodes have increased our confidence in the design of present and future diodes for the Particle Beam Fusion Accelerator II (PBFA II). In addition, the data from various experiments on Pro to I, Proto II, and PBFA I Applied-B ion diodes are inconsistent with previous models of diode operation, based on anode-cathode gap closure from expanding plasmas. A new model has been devised and applied to the PBFA II diode to explain the diode impedance and its time history, and to suggest methods for controlling the impedance.
5
Martínez-Angeles, Wendy Liliana, Orfil González-Reynoso, Gregorio Guadalupe Carbajal-Arizaga, and Mario Alberto García-Ramírez. "Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2." Electronics 13, no. 20 (2024): 4008. http://dx.doi.org/10.3390/electronics13204008.
Full textAbstract:
This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices.
6
Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, et al. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities." Nanomaterials 15, no. 2 (2025): 112. https://doi.org/10.3390/nano15020112.
Full textAbstract:
We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected carriers. Out of the four types of diodes, the highest photocurrent efficiency was obtained (at reverse voltage) for the wide-well, inverted polarity diode. This diode also showed the highest PL intensity (at positive voltages) of our four samples. Diodes with wide wells have stable emission wavelengths (almost independent of bias and excitation power).
7
Amin, Tamzeed B., James M. Mangum, Md R. Kabir, et al. "Transient Thermal Energy Harvesting at a Single Temperature Using Nonlinearity." Entropy 27, no. 4 (2025): 374. https://doi.org/10.3390/e27040374.
Full textAbstract:
The authors present an in-depth theoretical study of two nonlinear circuits capable of transient thermal energy harvesting at one temperature. The first circuit has a storage capacitor and diode connected in series. The second circuit has three storage capacitors, and two diodes arranged for full wave rectification. The authors solve both Ito–Langevin and Fokker–Planck equations for both circuits using a large parameter space including capacitance values and diode quality. Surprisingly, using diodes one can harvest thermal energy at a single temperature by charging capacitors. However, this is a transient phenomenon. In equilibrium, the capacitor charge is zero, and this solution alone satisfies the second law of thermodynamics. The authors found that higher quality diodes provide more stored charge and longer lifetimes. Harvesting thermal energy from the ambient environment using diode nonlinearity requires capacitors to be charged but then disconnected from the circuit before they have time to discharge.
8
Kasali, Suraju Olawale, Jose Ordonez-Miranda, Kamal Alaili, and Karl Joulain. "Spherical and cylindrical conductive thermal diodes based on two phase-change materials." Zeitschrift für Naturforschung A 77, no. 2 (2021): 181–90. http://dx.doi.org/10.1515/zna-2021-0170.
Full textAbstract:
Abstract We theoretically studied and optimized the thermal rectification of spherical and cylindrical conductive thermal diodes operating with two phase-change materials (PCMs), whose thermal conductivities significantly changes in a narrow interval of temperatures. This is done by deriving simple analytical expressions for the heat flows, temperature profiles and rectification factors of both diodes. It is shown that diode geometry has a significant impact on the heat flows and temperature profiles, but not so much on the thermal diode rectification factor. Optimal rectification factors of 63.5 and 63.2% are obtained for the spherical and cylindrical thermal diodes operating between the terminals of VO2 and polyethylene with a temperature difference of 150 K spanning the metal–insulator transition of both PCMs. These similar rectification factors could be enhanced even more with a phase-change material exhibiting higher contrast thermal conductivity than the ones in the present study. The obtained results can thus be useful to guide the development of PCMs capable of optimizing the rectification of conductive heat flows with different geometries.
9
Bulyarskiy S. V., Belov V. S., Gusarov G. G., Lakalin A.V., Litvinova K. I., and Orlov A. P. "Determining the mechanisms of current flow in structures of two-layer dielectrics." Semiconductors 57, no. 2 (2023): 124. http://dx.doi.org/10.21883/sc.2023.02.55958.3545.
Full textAbstract:
Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the diode. In this paper, the solution of the above problems is presented on the example of the Al-Al2O3-Ta2O5-Ni diode. The authors showed how one can divide the current-voltage characteristic into components, calculate potential barriers at the boundaries of metals with contacting dielectrics, and determine the concentration and energy characteristics of structural defects in dielectrics. Keywords: metal-insulator-metal diodes, current-voltage characteristics, Poole-Frenkel effect, currents of thermionic and thermal field emission, currents limited by space charge.
10
Polyntsev, Egor, Evgeny Erofeev, and Igor Yunusov. "The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications." Electronics 10, no. 22 (2021): 2802. http://dx.doi.org/10.3390/electronics10222802.
Full textAbstract:
In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.
11
Dang, Hongmei, Esther Ososanya, and Nian Zhang. "Comparison of electrical characteristics of Schottky junctions based on CdS nanowires and thin film." Nanotechnology 33, no. 21 (2022): 215707. http://dx.doi.org/10.1088/1361-6528/ac51eb.
Full textAbstract:
Abstract CdS nanowires and film Schottky diodes are fabricated and diode properties are compared. Effect of SnO2 on CdS film diode properties is investigated. CdS film/Au on 100 nm SnO2 substrate demonstrates like-resistor characteristics and increase in SnO2 thickness corrects resistor behavior, however the effective reverse saturation current density J o is significantly high and shunt resistance are considerably low, implying that SnO2 slightly prevents impurities migration from CdS films into ITO but cause additional issues. Thickness of CdS film on diode properties is further investigated and increasing CdS film thickness improved J o by one order of magnitude, however shunt resistance is obviously low, suggesting intrinsic issues in CdS film. 100 nm CdS nanowire/Au diodes reduce J o by three orders of magnitude in the dark and two orders of magnitude in the light respectively and their shunt resistance is significantly enhanced by 70 times when comparing with those of the CdS film diodes. The wide difference can be attributed to the fact that CdS nanowires overcome intrinsic issues in CdS film and thus demonstrate significantly well- defined diode behavior. Simulation found that CdS nanowire diodes have low compensating acceptor type traps and interface state density of 5.0 × 109 cm−2, indicating that interface recombination is not a dominated current transport mechanism in the nanowire diodes. CdS film diodes are simulated with acceptor traps and interface state density increased by two order of magnitude and shunt resistance reduced by one order of magnitude, indicating that high density of interface states and shunt paths occur in the CdS film diodes.
12
Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.012.
Full textAbstract:
An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
13
Lee, Sehan, Yunseop Yu, Sungwoo Hwang, and Doyeol Ahn. "Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 4089–93. http://dx.doi.org/10.1166/jnn.2007.18083.
Full textAbstract:
An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.
14
Jiao, Qianqian, Tao Zhu, Hang Zhou, and Qingling Li. "Improved Electrical Characteristics of 1200V/20A 4H-SiC Diode by Substrate Thinning and Laser Annealing." Journal of Physics: Conference Series 2083, no. 2 (2021): 022094. http://dx.doi.org/10.1088/1742-6596/2083/2/022094.
Full textAbstract:
Abstract In this paper, two kinds of silicon carbide (SiC) backside metallization processes were developed, which were backside thinning combined with laser annealing to form ohmic contact and direct rapid annealing (RTA) to form ohmic contact. The specific contact resistivity obtained by both annealing processes was 3.4E-5 Ω·cm2 to 3.8E-5 Ω·cm2. In order to obtain the effect of thinning combined with laser annealing process on forward conduction characteristics of medium voltage devices,1200V/20A JBS diode was developed, and the backside contact adopted the above two annealing schemes, the thickness of 4H-SiC substrate is 200μm. According to the statistical results of hundreds of JBS diodes, the electrical characteristics of the two types JBS are basically the same. Compared with the JBS diode without substrate thinning, the forward conduction voltage (VF) of the thinned JBS diode is decreased about 0.048V. When the substrate of 1200V SiC JBS diodes is reduced to 80μm, the value of VF can only be reduced by about 0.0868V.
15
Boteler, Lauren, Alexandra Rodriguez, Miguel Hinojosa, and Damian Urciuoli. "High-Voltage Stacked Diode Package." International Symposium on Microelectronics 2015, no. 1 (2015): 000225–30. http://dx.doi.org/10.4071/isom-2015-wa23.
Full textAbstract:
The Army is moving to a more electric force with a number of high-voltage applications. To support this transition, there have been efforts to develop high voltage (15–30 kV) single-die 4H-silicon carbide (SiC) bipolar switches and diodes. However, packaging these high-voltage devices has proven to be challenging since standard packaging methods cannot withstand the high voltages in a compact form. Therefore, this work aims to develop a compact prototype package with improved size, weight, and power density by stacking diodes. The stacked diode approach allows elimination of almost half of the wirebonds, reduces the board size by 45%, and reduces the package inductance. A module has been designed, fabricated, and tested which is the first 30 kV module reported in the literature to stack two high-voltage diodes in a series configuration. The package has a number of features specific to high-voltage packaging including (1) two fins that extend the perimeter of the package to mitigate shorting, and (2) all the leads were designed with rounded corners to minimize voltage crowding. Hi-pot tests were performed on the unpopulated package and showed the package can withstand 30 kV without breaking down. The completed package with the stacked diodes showed avalanche breakdown occurring at 29 kV. The complete package was then compared to an equivalent discrete diode module and showed a 10X reduction in size. During a clamped-inductive load test the stacked diodes showed lower parasitic capacitance, faster reverse recovery time, and lower turn on energy as compared to the discrete diode packages.
16
Cai, Dan, Lie Liu, Jinchuan Ju, Xuelong Zhao, and Yongfeng Qiu. "Observation of a U-like shaped velocity evolution of plasma expansion during a high-power diode operation." Laser and Particle Beams 32, no. 3 (2014): 443–47. http://dx.doi.org/10.1017/s0263034614000366.
Full textAbstract:
AbstractThe diode closure velocity has been investigated in pulsed high-power diodes operating with the mode of space-charge-limed bipolar flow. A combination of time-resolved electrical and optical diagnostics has been employed to study the basic phenomenon of the temporal and spatial evolutions of the diode plasmas. The results from the two diagnostics were compared. Since anode plasma rapidly expands, the diode closure speedvdincreases in the end of the current pulse. The diode closure speedvdcan be divided into three stages with a U-like whole shape. The obtained results can be used in various applications, for instance, the high-power microwave sources, electron-beam plasma heating, and material treating.
17
Zekentes, Konstantinos, Volodymyr V. Basanets, Mykola S. Boltovets, et al. "Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes." Materials Science Forum 600-603 (September 2008): 1019–22. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1019.
Full textAbstract:
Multi-diode broadband microwave signal modulators based on 4H-SiC p-i-n diodes were fabricated and fully characterized. The three-diode modulators are characterized by a transmission loss of 1-2 dB and isolation of 27-34 dB in the 2-7 GHz frequency range. Two-diode modulators were specially designed for high-temperature operation. These modulators are characterized by a transmission loss of 1.1-2.6 dB and isolation of 33-44.5 dB, in the 2-7 GHz frequency range at temperatures up to 300°C.
18
KAWAGUCHI, H. "POLARIZATION BISTABLE LASER DIODES." Journal of Nonlinear Optical Physics & Materials 02, no. 03 (1993): 367–89. http://dx.doi.org/10.1142/s021819919300022x.
Full textAbstract:
Static and dynamic characteristics of a pitchfork bifurcation polarization bistability in a laser diode are analyzed using rate-equations taking account of nonlinear gain. It is shown that the bistable laser diode has the advantage of high-speed switching when trigger optical pulses are coupled coherently to the bistable laser output. Experimental results on this new polarization bistability in a laser diode with a two-armed polarization-selective external cavity are also described with a brief review of recent progress in research on polarization bistable laser diodes.
19
Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, et al. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.
Full textAbstract:
This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.
20
Li, Ning, Ying Suet Lau, Yanqin Miao, and Furong Zhu. "Electroluminescence and photo-response of inorganic halide perovskite bi-functional diodes." Nanophotonics 7, no. 12 (2018): 1981–88. http://dx.doi.org/10.1515/nanoph-2018-0149.
Full textAbstract:
AbstractIn this work, we report our efforts to develop a novel inorganic halide perovskite-based bi-functional light-emitting and photo-detecting diode. The bi-functional diode is capable of emitting a uniform green light, with a peak wavelength of 520 nm, at a forward bias of >2 V, achieving a high luminance of >103 cd/m2 at 7 V. It becomes an efficient photodetector when the bi-functional diode is operated at a reverse bias, exhibiting sensitivity over a broadband wavelength range from ultraviolet to visible light. The bi-functional diode possesses very fast transient electroluminescence (EL) and photo-response characteristics, e.g. with a short EL rising time of ~6 μS and a photo-response time of ~150 μS. In addition, the bi-functional diode also is sensitive to 520 nm, the wavelength of its peak EL emission. The ability of the bi-functional diodes for application in high speed visible light communication was analyzed and demonstrated using two identical bi-functional diodes, one performed as the signal generator and the other acted as a signal receiver. The dual functions of light emission and light detection capability, enabled by bi-functional diodes, are very attractive for different applications in under water communication and visible light telecommunications.
21
Parkhomenko, A. I., and A. M. Shalagin. "Two-level gas laser with transverse diode pumping." Quantum Electronics 52, no. 5 (2022): 426–36. http://dx.doi.org/10.1070/qel18038.
Full textAbstract:
Abstract We theoretically study a new method for generating laser radiation by a two-level system without population inversion in the 'red' wing of its spectral line under resonant absorption of broadband radiation from pump laser diodes. A two-level system simulates the atoms of an active gas in an atmosphere of a high-pressure buffer gas. The effect results from the fact that in the 'red' wing of the spectral line, the probability of stimulated emission exceeds the probability of absorption if the homogeneous broadening due to the interaction of particles with the buffer gas significantly exceeds the natural one (at high pressures of the buffer gas). Analytical formulae are obtained that describe the operation of a two-level gas laser with transverse diode pumping. It is found that the longer the active medium, the higher the buffer gas pressure and pump radiation intensity, and the smaller the width of the pump radiation spectrum, the greater the efficiency of conversion of pump radiation into laser radiation. In a sufficiently long active medium (the length of the medium is 50 times its width), the conversion efficiency can reach 44% at a buffer gas pressure of 5 atm, a pump diode radiation intensity of 3 kW cm-2, and a half-width of its spectrum of 1 cm-1. A two-level gas laser with transverse diode pumping is capable of generating continuous optical radiation with a very high (up to 100 kW) power. The frequency of laser radiation can be tuned by several tens of cm-1.
22
Choi, Munyong, Hyunho Wi, Byeonggwi Mun, Yonghyun Yoon, Hyunwoo Lee, and Byungje Lee. "A Compact Frequency Reconfigurable Antenna for LTE Mobile Handset Applications." International Journal of Antennas and Propagation 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/764949.
Full textAbstract:
A compact (8 × 62 × 5 mm3; 2.48 cc) frequency reconfigurable antenna that uses electrical switching with PIN diodes is proposed for the low frequency LTE band (699 MHz–862 MHz), high frequency LTE band (2496 MHz–2690 MHz), GSM850/900 bands (824 MHz–960 MHz), and DCS/PCS/WCDMA bands (1710 MHz–2170 MHz). The penta-band PIFA is first designed for GSM850/900/DCS/PCS/WCDMA bands by using two slits and ground pins within a limited antenna volume (8 × 54.6 × 5 mm3; 2.18 cc). The frequency reconfigurable antenna based on this penta-band PIFA is thus proposed to additionally cover all LTE bands. The proposed antenna has two PIN diodes with an optimal location. For State 1 (PIN diode 1: ON state, PIN diode 2: OFF state), the proposed antenna covers the low frequency LTE band, DCS/PCS/WCDMA bands, and high frequency LTE band. For State 2 (PIN diode 1: OFF state, PIN diode 2: ON state), the antenna covers the GSM850/900 bands. Simulated and measured results show that the total efficiency of the proposed antenna was greater than 40% for all operating frequency bands.
23
Pushkarev, A. I., and YU I. Isakova. "A spiral self-magnetically insulated ion diode." Laser and Particle Beams 30, no. 3 (2012): 427–33. http://dx.doi.org/10.1017/s0263034612000316.
Full textAbstract:
AbstractThe paper presets the results of a study on a self-magnetically insulated ion diode with an explosive-emission potential electrode. The experiments have been carried out using the TEMP-4M accelerator, operating in a double-pulse mode: the first negative pulse (300–500 ns, 100–150 kV) followed by the second positive pulse (150 ns, 250–300 kV). The ion beam energy density was 0.3–2.5 J/cm2; the beam was composed from carbon ions (80–85%) and protons. We studied several geometries of the diode: planar and focusing strip arrangement, annular and spiral geometries. It was shown that during the second voltage pulse, a condition of magnetic insulation in the diode gap is fulfilled (B/Bcr ≥3). Using the new spiral geometry of the diode, it was possible to increase the efficiency of ion current generation due to the suppression of the electron component of the total diode current by increasing the electron transit time in the gap. We have increased the efficiency of carbon ion generation from 5–9% (in the planar strip diodes) up to 17–20% in the spiral diode. The spiral geometry of the diode makes it possible to increase the efficiency of C+ ion generation 25–30 times compared to the space-charge-limited current (Childe-Langmuir limit). This is more than two times higher than in other known geometries of self-magnetically insulated diodes. The spiral diode has a resource of more than 107 pulses.
24
Wang, Ying, Liu-An Li, Jin-Ping Ao, and Yue Hao. "Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode." Micromachines 11, no. 1 (2020): 97. http://dx.doi.org/10.3390/mi11010097.
Full textAbstract:
In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms. A well-designed grooved anode contact is adopted to separate the long-channel diode into two short-channel diodes in parallel. If the grooved anode contact is positioned in the middle of the device, the output power nearly doubles in the grooved-anode diode compared with the single-channel ones, as does the output frequency. Based on the numerical results, the best output characteristics are obtained at the 2.0-µm symmetrical grooved-anode diode, which produces nearly 5.48 mW of power at the fundamental frequency of 172.81 GHz, with 3.13% efficiency of power conversion. If the grooved anode contact is not positioned in the middle of the diode, the harmonic frequency would be enhanced. The GaN heterostructure grooved-anode Gunn diode has been demonstrated to be an excellent solid-state source of terahertz oscillator.
25
Dragoman, Mircea, Adrian Dinescu, Martino Aldrigo, and Daniela Dragoman. "Quantum Graphene Asymmetric Devices for Harvesting Electromagnetic Energy." Nanomaterials 14, no. 13 (2024): 1114. http://dx.doi.org/10.3390/nano14131114.
Full textAbstract:
We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 v/w, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 v/w. An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
26
Chen, Chun-An, Yu-Ting Hsu, Wen-How Lan, et al. "On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis." Crystals 10, no. 1 (2020): 34. http://dx.doi.org/10.3390/cryst10010034.
Full textAbstract:
Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indium nitrate precursors. Diodes with different nitrogen content in their precursor were prepared and their properties were investigated. With scanning electron microscopy, film surface with mixed hexagonal flakes and tiny blocks was characterized for all samples. Certain morphologies varied for samples with different N contents. In the photoluminescence analyses, the intensity of the oxygen-related defects peak increased with the increasing of nitrogen content. The diodes were fabricated with an Au and In deposition on the top and backside. The diode current–voltage as well as capacitance–voltage characteristics were examined. An ununiformed n-type concentration distribution with high concentration near the interface in the MgZnO:Er,N layer was characterized for all samples. Diodes with high nitrogen content exhibit reduced breakdown voltage and higher interface concentration characteristics. Under reversed bias conditions with an injection current of 50 mA, a light spectrum with two distinct green emissions around wavelengths 532 and 553 nm was observed. A small spectrum variation was characterized for diodes prepared from different nitrogen content. The diode luminescence characteristics were examined and the diode prepared from N/Zn=1 in the precursor showed an optimal injection current-to-luminescence property. The current and luminescence properties of the diode were characterized and discussed.
27
Cui, Yinjie, Jian Guo, Jie Xu, Hao Chi Zhang, Xiao-Wei Zhu, and Cheng Qian. "Design of 2N-diode power-combined frequency tripler with coupled suspended striplines." International Journal of Microwave and Wireless Technologies 9, no. 9 (2017): 1781–90. http://dx.doi.org/10.1017/s175907871700068x.
Full textAbstract:
A novel scheme for power-combined frequency tripler adopting 2N diodes is proposed in this work. Even mode coupled suspended substrate stripline is used to divide and recombine the input and output power. The circuits of the tripler are printed on both sides of the substrate, with N diodes on the front side and the other N diodes on the back side. The front diodes and back diodes are in anti-parallel connection, and DC biased separately to increase the bandwidth and power capacity. Three Q-band prototypes with two, four, and six diodes are fabricated and tested. The output compression powers at output frequency of 43.5 GHz for two/four/six-diode tripler are 9.2, 11, and 12 dBm, respectively. Power capacity is improved with the proposed tripler. Optimum DC bias is also discussed in this work, and it is found that it first increases with drive power, and then drops when large drive power applied because of the increased series resistance of the diode due to high junction temperature.
28
Nechaev, V. G., A. S. Zagorodny, and A. I. Dobrikov. "Temperature Correction of Broadband Power Detectors Based on Low-Barrier Diodes." Journal of the Russian Universities. Radioelectronics, no. 3 (July 19, 2018): 79–84. http://dx.doi.org/10.32603/1993-8985-2018-21-3-79-84.
Full textAbstract:
The article is devoted to investigation of microwave power converter temperature dependence caused by changes in the current-voltage characteristic of diodes. The analytical expressions are given for such diode parameters as junction resistance and diode saturation current that allow to estimate temperature influence on diode detector output voltage. This paper presents a comparison of two methods, i.e. correlation based on a terminological method that works in con-junction with an arithmetic-logical mechanism. The first method implies that the temperature stabilizes by use of identical pair of diodes one of which compensates for temperature-induced changes of the second diode junction resistance. The second method involves formation of correction factors that allow performing temperature correction of measurement results in a wide range of capacities. Based on the conducted temperature tests of microwave power meters with the use of a temperature sensor in the microwave unit, the thermal correction algorithm was implemented. It allows to reduce the changes in the readings from ±15 to ±1.5%. Data from the results of experimental studies that can be used in measuring microwave equipment of various types. The results of experimental studies of detectors based on low-barrier diodes ZB-28 with a boundary speed exceeding 100 GHz and a tangential sensitivity of 1 nW are presented.
29
Anutgan, Mustafa, Tamila Anutgan, and Ismail Atilgan. "SEM, EDX spectroscopy and real-time optical microscopy of electroformed silicon nitride-based light emitting memory device." European Physical Journal Applied Physics 89, no. 1 (2020): 10303. http://dx.doi.org/10.1051/epjap/2020190300.
Full textAbstract:
An ordinary amorphous silicon nitride-based p-i-n diode was electroformed under optimized process conditions, which led to its instant transformation to a semiconductor device with two-in-one properties: a bright visible light emitting diode and a resistive memory switching device; i.e. light emitting memory (LEM). In the present work, for a thorough understanding of the changes that occur during electroforming, SEM images and EDX analyses were performed on both top-view and cross-section of both as-deposited and electroformed diodes. It was seen from the top-view images that while the diode surface of the as-deposited diode had a smooth and homogeneous ITO top electrode, the electroformed diode exhibited a rough ITO surface. EDX analyses showed that ITO was completely removed from many point-like regions on the diode surface. Cross-sectional SEM images showed no clue of any material diffusion through the diode structure during electroforming, which was one of the suspected situations about our model. EDX results also showed no considerable increase of any of the ingredients of the ITO alloy (In, Sn or O) across the semiconductor (p-i-n) layers of the electroformed diode. In contrast to the roughened surface of the electroformed diode, the silicon-based layers of the diode below the ITO electrode seemed to be well-preserved. Real-time optical microscopy showed that the light is emitted through the regions of the diode surface where the residual ITO top electrode is present.
30
Wang, Ying, Liu-An Li, Lin-An Yang, Jin-Ping Ao, and Yue Hao. "Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode." Applied Sciences 10, no. 17 (2020): 5777. http://dx.doi.org/10.3390/app10175777.
Full textAbstract:
In this paper, we propose a novel gallium nitride-based multi-two-dimensional-electron-gas (2DEG)-channel self-parallel Gunn diode (SPD) for the first time. In the SPD, a trench anode is etched through at least the bottommost 2DEG channels, which splits all 2DEG channels into two shorter channels with lengths of L1 and L2. Therefore, one SPD is just equal to several shorter diodes in parallel; as a result, we call it a self-parallel Gunn diode. In the symmetrical SPD, the component of fundamental frequency is nearly multiplied as compared with the regular Gunn diode. In the asymmetrical SPD (L2 = nL1, n is a positive integer), the harmonic components are greatly enhanced, specially the nth harmonic. Our work demonstrates that the GaN-based terahertz SPD not only offers an easy transfer between two different frequencies, but also realizes the simultaneous enhancement of oscillation power and frequency.
31
KOVALCHUK, B. M., E. N. ABDULLIN, D. M. GRISHIN, et al. "Linear transformer accelerator for the excimer laser." Laser and Particle Beams 21, no. 2 (2003): 219–22. http://dx.doi.org/10.1017/s026303460321209x.
Full textAbstract:
A high-current accelerator for pumping of the 200-L excimer laser is developed, providing electron energy of 550 keV, a diode current of 320 kA, and an e-beam current of 250 kA. The high-voltage part of the accelerator consists of two linear transformers with a stored energy of 98 kJ. To reduce the influence of the self-magnetic field on e-beam formation, the vacuum diode is divided into six separate magnetically isolated diodes.
32
Afanasyev, Alexey V., Boris V. Ivanov, Vladimir A. Ilyin, Alexey F. Kardo-Sysoev, Maria A. Kuznetsova, and Victor V. Luchinin. "Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC." Materials Science Forum 740-742 (January 2013): 1010–13. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1010.
Full textAbstract:
This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥102 А/сm2) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•103 А/сm2),what is significantly higher than similar DSRD’s parameters obtained for silicon.
33
Ukoima, K. N., and O. A. Ekwe. "THREE-DIODE MODEL AND SIMULATION OF PHOTOVOLTAIC (PV) CELLS." UJET 5, no. 1 (2019): 108–16. https://doi.org/10.33922/j.ujet_v5i1_12.
Full textAbstract:
Existing empirical solar cell models use one or two diodes. As the number of diodes in a model increases, the mathematical complexity in deriving model equations also increases. In this paper, a photovoltaic cell is modeled using three diodes. Nonlinear mathematical equations governing the I-V and P-V characteristics are summarized and simulated using Matlab looping iterative method. All simulations were performed in Matlab. Comparison is made between all models (one, two and three-diode) for design verification. Results obtained show that as the number of diodes increases in a PV cell model, the open circuit voltage and maximum power decreases for a given set of PV cell parameters. The short circuit current remained at a fixed value irrespective of the number of diodes.
34
Shang, Er Song, and Tao An. "Two-Diode Model Analysis and Experimental Verification for Photovoltaic Cells." Advanced Materials Research 684 (April 2013): 269–73. http://dx.doi.org/10.4028/www.scientific.net/amr.684.269.
Full textAbstract:
This paper analyzed a kind of two-diode model and reasonably simplified the mathematical calculation process under different irradiance, proposing a method which can use maximum power point to calculate simultaneously series and parallel resistance. Two kinds of PV modules should be tested in order to validating the accuracy of the proposed method. It is calculated that the relative error of single diode model is 1.72% and the two-diode model is 0.45%. The result shows that more accuracy can be performed for two-diode model in reflecting the output characteristics of photovoltaic cells.
35
Vivek, Tamrakar, Gupta S.C., and Sawle Yashwant. "SINGLE-DIODE AND TWO-DIODE PV CELL MODELING USING MATLAB FOR STUDYING CHARACTERISTICS OF SOLAR CELL UNDER VARYING CONDITIONS." Electrical & Computer Engineering: An International Journal (ECIJ) 4, no. 2 (2015): 67–77. https://doi.org/10.5281/zenodo.3560505.
Full textAbstract:
This paper presents a detailed eplaination about various characteristics of ideal single diode, practical single diode and two diode equivalent circuit models realized for modeling of solar photovoltaic cell. Then it presents non-linear mathematical equations necessary for producing I-V and P-V characteristics from a single diode model. A flowchart has been made for estimation of solar cell output current, for single diode and two diode model, using Newton-Raphson iterative technique which is then programmed in MATLAB script file accordingly. A typical 120W polycrystalline solar module specifications have been used for model accuracy evaluation. The characteristic curves were obtained with the use of manufacturer`s datasheet and it shows the precise correspondence to both the models.
36
Zhu, Xinyu, Shurong Dong, Fangjun Yu, et al. "Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection." Nanomaterials 12, no. 10 (2022): 1743. http://dx.doi.org/10.3390/nano12101743.
Full textAbstract:
A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and diode string, the proposed SCR-D has an additional conduction path constituting by two additional inherent diodes, which results in a 1.8-to-2.2-times current surge capability as compared with the simple diode string and conventional SCR with the same size. The results show that the proposed device meets the 7 nm FinFET process ESD design window and has already been applied in actual circuits.
37
SHEIKHIAN, IRAJ, and FARSHID RAISSI. "AN IMPROVED DIFFERENTIAL COMPARATOR WITH FIELD EFFECT DIODE OUTPUT STAGE." Journal of Circuits, Systems and Computers 14, no. 05 (2005): 931–37. http://dx.doi.org/10.1142/s0218126605002684.
Full textAbstract:
In a field effect diode, carriers of a p–n junction can be modulated on-line. The p and n regions are created by two oppositely biased, and closely spaced, gates in CMOS SOI technology. Using gates as the third terminal, the field effect diode can operate as a switch or as an amplifying element. In this paper, a conventional differential comparator is designed and its performance is compared with a circuit which uses field effect diodes in its output stage. It is shown that the large current sinking and supplying capability of the field effect diode causes this comparator to operate faster than the conventional circuit, consumes less power and covers less chip area.
38
Chitti Babu, B., Suresh Gurjar, and Ashish Meher. "Analysis of Photovoltaic (PV) Module during Partial Shading based on Simplified Two-Diode Model." International Journal of Emerging Electric Power Systems 16, no. 1 (2015): 15–21. http://dx.doi.org/10.1515/ijeeps-2014-0164.
Full textAbstract:
Abstract Generally, the characteristics of photovoltaic (PV) array are largely affected by solar temperature, solar irradiance, shading patterns, array configuration and location of shading modules. Partial shading is due to moving clouds and shadows of nearby obstacles and can cause a significant degradation in the output of PV system. Hence, the characteristics of PV array get more multifaceted with multiple peaks. The ultimate aim of the paper is to analyze the performance of PV module during such adverse condition based on simplified two-diode model. To reduce the computational time, the simplified two-diode model has a photocurrent source in parallel with two ideal diodes. Only four parameters are required to be calculated from datasheet in order to simulate the model. Moreover, the performance of PV array is evaluated at different shaded patterns and it is found that the model has less computational time and gives accurate results.
39
Abdullah, M. N., M. Z. Hussin, S. A. Jumaat, N. H. Radzi, and Lilik J. Awalin. "Estimation of Photovoltaic Module Parameters based on Total Error Minimization of I-V Characteristic." Bulletin of Electrical Engineering and Informatics 7, no. 3 (2018): 425–32. https://doi.org/10.11591/eei.v7i3.1274.
Full textAbstract:
Mathematical Modelling of photovoltaic (PV) modules is important for simulation and performance analysis of PV system. Therefore, an accurate parameters estimation is necessary. Single-diode and two-diode model are widely used to model the PV system. However, it required to determine several parameters such as series and shunt resistances that not provided in datasheet. The main goal of PV modelling technique is to obtain the accurate parameters to ensure the I-V characteristic is closed to the manufacturer datasheet. Previously, the maximum power error of calculated and datasheet value are considered as objective to be minimized for both models. This paper proposes the PV parameter estimation model based minimizing the total error of open circuit voltage (VOC), short circuit current (ISC) and maximum power (PMAX) where all these parameters are provided by the manufacturer. The performance of single-diode and two-diode models are tested on different type of PV modules using MATLAB. It found that the two-diode model obtained accurate parameters with smaller error compared to single-diode model. However, the simulation time is slightly higher than single-diode model due extra calculation required.
40
Amin, Hajizadeh, and Warrier Anil Kumar Jishnu. "Parameter Identification and Effect of Partial Shading on a Photovoltaic System." E3S Web of Conferences 64 (2018): 06006. http://dx.doi.org/10.1051/e3sconf/20186406006.
Full textAbstract:
Partial shading cause significant losses to the performance of a photovoltaic (PV) system. So, it is imperative to study effects of partial shading; for that a two-diode model of the experimental setup made. Upon verifying the model with the experimental parameters, a MATLAB/Simulink model is made based on this model. Various shading patterns, the effect of bypass diodes; the effect of overlapping bypass diode is studied on this MATLAB/Simulink model. It is found out that the reduction in power loss is depended on the location of the shaded cell but not the area of the shaded cell. Also, the over-lapping bypass diode configuration has a slight improvement in the PV performance compared to the non-overlapping bypass diode configuration. An experimental test is also conducted by applying different shading pattern and they proves the results are compatible with the simulated results.
41
Горелик, В. С., А. Ю. Пятышев та Н. В. Сидоров. "Фотолюминесценция ниобата лития, легированного медью". Физика твердого тела 60, № 5 (2018): 904. http://dx.doi.org/10.21883/ftt.2018.05.45784.339.
Full textAbstract:
AbstractThe photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV–Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520–620 nm.
42
Rahman, Md Hafizur, Shahena Akter, and Suman Chowdhury. "Evaluation of Power Performance of Solar Module Using Two Diode Model with MATLAB Simulation." Advanced Journal of Graduate Research 13, no. 1 (2023): 8–17. http://dx.doi.org/10.21467/ajgr.13.1.8-17.
Full textAbstract:
This paper tries to represent the difference between single diode and two diode photovoltaic models in terms of efficiency simulated by MATLAB. The research activities done earlier had shown a clear preview that the solar cell can act as concentrated solar cell for increasing the conversion efficiency to a great extant so that output power can be improved to a large scale. Here for showing the manner of concentrated solar action double diode model has been calculated for observing the power difference in comparison with the solar cell of single diode as a convenient one. It has been observed that the photovoltaic module with two diode model is observed as highly efficient in comparison with single diode model. And this two diode model can be treated as highly efficient to convert the solar energy in the electric energy. Also, the behavior of power performance is observed practically which is included in this paper. And finally, a comparison has been drawn out to exhibit the verification of power performance for two diode model using MATLAB simulation. The mostly impact factors considered in this paper are solar irradiance and temperature affecting the power output from PV module.
43
Masugata, Katsumi, Hironobu Isobe, Keigo Aga, et al. "Two-dimensional focusing of self-magnetically insulated “Plasma Focus Diode”." Laser and Particle Beams 7, no. 2 (1989): 287–303. http://dx.doi.org/10.1017/s0263034600006054.
Full textAbstract:
A new and simple type of self-magnetically insulated, vacuum ion diode named “Plasma Focus Diode” has been successfully developed with a large solid angle of irradiation and low divergence angle. The diode has a pair of coaxial cylindrical electrodes similar to a Mather-type plasma focus device. Ion-current density of 1·9 kA/cm2 has been obtained on the anode surface under the experimental conditions of diode voltage ∼1·4 MV, diode current ∼180 kA, and pulse width ∼75 ns. The generated ion beam has been two-dimensionally focused (line focusing) with a focusing radius of ∼0·18 mm, giving a maximum ion current density and beam power density at the axis of ∼0·14 MA/cm2 and ∼0·18 TW/cm2, respectively. The motion of electrons in the gap has been numerically simulated by use of a newly developed particle-in-cell computer simulation code, and good agreement has been obtained between the simulation and the experiment.
44
Bertling, Karl, Xiaoqiong Qi, Thomas Taimre, Yah Leng Lim, and Aleksandar D. Rakić. "Feedback Regimes of LFI Sensors: Experimental Investigations." Sensors 22, no. 22 (2022): 9001. http://dx.doi.org/10.3390/s22229001.
Full textAbstract:
In this article, we revisit the concept of optical feedback regimes in diode lasers and explore each regime experimentally from a somewhat unconventional point of view by relating the feedback regimes to the laser bias current and its optical feedback level. The results enable setting the operating conditions of the diode laser in different applications requiring operation in different feedback regimes. We experimentally explored and theoretically supported this relationship from the standard Lang and Kobayashi rate equation model for a laser diode under optical feedback. All five regimes were explored for two major types of laser diodes: inplane lasers and vertical-cavity surface emitting lasers. For both lasers, we mapped the self-mixing strength vs. drive current and feedback level, observed the differences in the shape of the self-mixing fringes between the two laser architectures and a general simulation, and monitored other parameters of the lasers with changing optical feedback.
45
Song, Zhiqiang, Zilong Wang, Hua Zhang, et al. "Influence of Cell Temperature on Theoretical Properties of InGaP/ InGaAs/Ge Triple-Junction Concentrated Solar Cells." Recent Patents on Mechanical Engineering 17, no. 3 (2024): 159–70. http://dx.doi.org/10.2174/0122127976281400231211113923.
Full textAbstract:
Aims: This study aims to analyze the accuracy of single- and double-diode models in predicting the electrical parameters of InGaP/InGaAs/Ge triple-junction solar cells as described in relevant patents under various operating conditions. Methods: This study obtained and analyzed experimental and theoretical values of the relevant electrical parameters of solar cells through a combination of experimental research and theoretical model calculations. Results: The results indicated that the root mean square error of the short-circuit current decreased from 0.21 at 400 W/m² to 0.11 at 1000 W/m². The temperature of the two precision cut-off points for the open-circuit voltage in the single- and double-diode models increased from 34°C and 64°C at 400 W/m² to 39°C and 72°C at 1000 W/m². Additionally, for peak power and conversion efficiency, the precision cut-off temperatures of the single- and double-diode models were 56°C, 68°C, and 77°C at 400 W/m², 600 W/m², and 800 W/m², respectively. Conclusion: The theoretical values of the short-circuit current exceeded the corresponding experimental values. The single- and double-diode models for open-circuit voltage exhibited two accuracy cut-off points, with the single-diode model demonstrating greater accuracy within this temperature range. Similarly, the peak power and conversion efficiency models for single- and double-diodes have an accuracy cut-off point, with the double-diode model performing better at higher temperatures.
46
Luo, Yong, Hongtao Liu, Yiming He, Hengrong Cui, and Guangli Yang. "Continuous Resonance Tuning without Blindness by Applying Nonlinear Properties of PIN Diodes." Sensors 21, no. 8 (2021): 2816. http://dx.doi.org/10.3390/s21082816.
Full textAbstract:
Metamaterial antennas consisting of periodical units are suitable for achieving tunable properties by employing active elements to each unit. However, for compact metamaterials with a very limited number of periodical units, resonance blindness exists. In this paper, we introduce a method to achieve continuous tuning without resonance blindness by exploring hence, taking advantage of nonlinear properties of PIN diodes. First, we obtain the equivalent impedance of the PIN diode through measurements, then fit these nonlinear curves with mathematical expressions. Afterwards, we build the PIN diode model with these mathematical equations, making it compatible with implementing co-simulation between the passive electromagnetic model and the active element of PIN diodes and, particularly, the nonlinear effects can be considered. Next, we design a compact two-unit metamaterial antenna as an example to illustrate the electromagnetic co-simulation. Finally, we implement the experiments with a micro-control unit to validate this method. In addition, the nonlinear stability and the supplying voltage tolerance of nonlinear states for both two kinds of PIN diodes are investigated as well. This method of obtaining smooth tuning with nonlinear properties of PIN diodes can be applied to other active devices, if only PIN diodes are utilized.
47
Shackery, Iman, Atiye Pezeshki, Jae Young Park та ін. "Few-layered α-MoTe2 Schottky junction for a high sensitivity chemical-vapour sensor". Journal of Materials Chemistry C 6, № 40 (2018): 10714–22. http://dx.doi.org/10.1039/c8tc02635a.
Full textAbstract:
For the first time, we connect in series two α-MoTe<sub>2</sub>-based Schottky diodes (SDs) to form a back-to-back diode using the micromechanical exfoliation method. Such structure shows excellent performance toward chemical vapor sensing.
48
AbdAli, Adala, Ali Abdulabbas, and Habeeb Nekad. "Nonconventional Diode Clamped Multilevel Inverter with Reduced Number of Switches." Iraqi Journal for Electrical and Electronic Engineering 16, no. 2 (2020): 1–12. http://dx.doi.org/10.37917/ijeee.16.2.2.
Full textAbstract:
The conventional multilevel inverter (MLI) is divided into three types: diode clamped MLI, cascade H Bridge MLI and flying capacitor MLI. The main disadvantage of these types is the higher required number of components when the number of the levels increases and this results in more switching losses, system higher cost, more complex of control circuit as well as less accuracy. The work in this paper proposes two topologies of nonconventional diode clamping MLI three phase nine levels and eleven levels. The first proposed topology has ten switches and six diodes per phase while the second topology has nine switches and four diodes per phase. The pulse width modulation (PWM) control method is used as a control to gate switches. THD of the two proposed topologies are analyzed and calculated according different values of Modulation index (where the power loss and efficiency are obtained and plotted.
49
Dostálová, T., J. Kratochvíl, H. Jelínková, A. Nocar, and L. Vavříčková. "Blue (0.44 µm) and red (1.7 µm) diode laser activated bleaching—dental shade changes determination." Laser Physics Letters 20, no. 3 (2023): 035601. http://dx.doi.org/10.1088/1612-202x/acb3c9.
Full textAbstract:
Abstract Tooth whitening or bleaching is one of the most common dental procedures that optimize the white color of the teeth and minimize the simultaneous damage to the tooth structure. Light can speed up the whitening process with halogen lamps, light-emitting diodes, plasma arc lamps, and lasers. Our results show that combinations of a teeth whitening agent with laser light irradiation with a 0.44 µm blue laser diode or a 1.7 µm near-IR laser diode accelerate the whitening process not only during tooth irradiation but also within two weeks after the procedure.
50
Rehan Ali Rahimoon, Kamil Zaman Rahimoon, Aamir Khan Jarwar, Muhammad Faizan Shaikh, and Mujtaba Abid Hussain. "ANALYSIS OF PERFORMANCE OF A PV SOLAR CELL AND EFFECT OF PHYSICAL PARAMETER." Bulletin of Toraighyrov University. Physics & Mathematics series, no. 4,2023 (December 29, 2023): 88–103. http://dx.doi.org/10.48081/jajd6018.
Full textAbstract:
In recent days, PV solar systems have been commercialized in almost the whole world because of its advantageous efforts like a long-term supply of power at a very lower cost and various governments are also encouraging consumers to use sustainable green energy. The purpose of this study was to develop a model that allows the user to predict PV cell’s current-voltage (I-V) and power-voltage (P-V) characteristic curves by varying irradiance, cell temperature, and diode ideality factor, and the value of series resistance. The characteristic curves obtained from the simulation of the MATLAB/Simulink model are matched with the data given by the manufacturers by changing the value of mentioned internal parameters. Comparative results of one and two diode models with different electrophysical parameters are shown. There are analyses for photocurrent, voltage and power, as well as their dependence on single and two diode models. Block diagram models for diodes are also presented. Keywords: Irradiance, Temperature, Ideality Factor, Series Resistance, current-voltage characteristics.