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Journal articles on the topic 'UHV magnetron sputtering'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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1

Lee, G. R., J. J. Lee, C. S. Shin, I. Petrov, and J. E. Greene. "Self-organized lamellar structured tantalum–nitride by UHV unbalanced-magnetron sputtering." Thin Solid Films 475, no. 1-2 (2005): 45–48. http://dx.doi.org/10.1016/j.tsf.2004.07.070.

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2

NASEEM, SHAHZAD. "AFM STUDIES OF VARIOUS NIOBIUM AND ALUMINIUM THIN FILMS FOR THEIR USE IN JOSEPHSON JUNCTIONS." Surface Review and Letters 08, no. 06 (2001): 689–92. http://dx.doi.org/10.1142/s0218625x01001646.

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Nb thin films have been prepared with e-beam evaporation under UHV conditions, and by RF magnetron sputtering. Al thin films were deposited by resistive heating in the UHV chamber. The preparation of these films and the trilayers of Nb/AlO x /Nb are intended for their use in Josephson junctions. Surface studies of these films are undertaken by using an atomic force microscope in the noncontact mode. These studies have revealed that the sputter-deposited Nb film surface is smoother than that of the UHV e-beam evaporated with R rms values of 3.5 and 4.0 nm respectively. Al thin films have a very
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3

Kot, Anna, Marta Radecka, Dominik Dorosz, and Katarzyna Zakrzewska. "Optically Active TiO2:Er Thin Films Deposited by Magnetron Sputtering." Materials 14, no. 15 (2021): 4085. http://dx.doi.org/10.3390/ma14154085.

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Titanium dioxide photoanodes for hydrogen generation suffer from a profound mismatch between the optical absorption of TiO2 and the solar spectrum. To solve the problem of low solar-to-chemical efficiency, optically active materials are proposed. In this work, TiO2 thin films containing erbium were deposited by radio frequency RF magnetron sputtering under ultrahigh vacuum conditions UHV. Morphology, structural, optical and electronic properties were studied. TiO2:Er thin films are homogenous, with uniform distribution of Er ions and high transparency over the visible VIS range of the light sp
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4

Jeong, Eunkang, Juyun Park, Sujin Choi, Jisoo Kang, and Yong-Cheol Kang. "Surface Characteristics of MoNxThin Films Obtained by Reactive rf Magnetron Sputtering in UHV System." Bulletin of the Korean Chemical Society 36, no. 10 (2015): 2446–50. http://dx.doi.org/10.1002/bkcs.10470.

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5

Rudder, R. A., J. W. Cook, and G. Lucovsky. "Thin films of a‐Si1−xGex:H alloys by dual magnetron sputtering in a UHV chamber." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3, no. 3 (1985): 567–71. http://dx.doi.org/10.1116/1.572995.

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6

MAGLIONE, M. G., F. CHIARELLA, R. DI CAPUA, et al. "HIGH QUALITY FULLY IN-SITU MgB2 THIN FILMS OBTAINED BY DC MAGNETRON SPUTTERING." International Journal of Modern Physics B 17, no. 04n06 (2003): 779–84. http://dx.doi.org/10.1142/s0217979203016601.

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MgB 2 thin films were grown in-situ at INFM- University of Naples by a magnetron sputtering technique in a UHV system (10-7 Pa) equipped with 3 focused 2′′ magnetron sources (a stoichiometric MgB 2 and metallic Mg and B targets by Superconducting Components Inc.). The substrates (sapphire or MgO) were placed "on axis" at 7 cm from the target surface on the surface of a molybdenum heater that could be operated up to 1000°C under vacuum. Best results were obtained codepositing MgB 2 and Mg at equal sputtering power (500W) for 10 min on cold substrates, resulting in a Mg rich Mg-B precursor film.
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7

Sakamoto, Y., S. Kuramochi, T. Uchiyama, M. Shimada, and H. Kokai. "Surface modification of uhv wall by a combination of magnetron sputtering of chromium and oxygen plasma." Vacuum 43, no. 11 (1992): 1095–96. http://dx.doi.org/10.1016/0042-207x(92)90341-s.

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8

Nakano, Takeo, Ken'ichiroh Hoshi, and Shigeru Baba. "Effect of background gas environment on oxygen incorporation in TiN films deposited using UHV reactive magnetron sputtering." Vacuum 83, no. 3 (2008): 467–69. http://dx.doi.org/10.1016/j.vacuum.2008.04.014.

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9

Bøttiger, J., N. Karpe, J. P. Krog, and A. V. Ruban. "Measured and calculated thermoelastic properties of supersaturated fcc Ni(Al) and Ni(Zr) solid solutions." Journal of Materials Research 13, no. 6 (1998): 1717–23. http://dx.doi.org/10.1557/jmr.1998.0238.

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Metastable face-centered cubic (fcc) solid solutions of Ni1–xAlx and Ni1–xZrx have been prepared in thin-film form using dc planar magnetron sputtering in a UHV system. In both these alloy systems, extended solubilities in the fcc phase and a pronounced (111) texture are observed after sputter deposition. An amorphous phase is found to form in Ni1–xAlx for x ≥ 0.30 and in Ni1–xZrx for x ≥ 0.05. Lattice constants, thermal expansion coefficients, and Debye temperatures were derived from x-ray diffraction measurements. These parameters were also calculated by using ab initio methods in the framew
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10

Horprathum, M., P. Chindaudom, V. Patthanasettakul, S. Rotbuathong, P. Eiamchai, and Pichet Limsuwan. "Photo-Induced Superhydrophilic TiO2 Films Deposited by DC Reactive Magnetron Sputtering at Room Temperature." Advanced Materials Research 55-57 (August 2008): 441–44. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.441.

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Titanium dioxide (TiO2) thin films, 80-170 nm thick were deposited on unheated silicon wafers (100) and glass slides with controlled operating pressure in UHV dc sputtering system with a pressure control gate valve. The dependence of hydrophilic property of the films on the total sputtering pressure of mixed Ar and O2 gases (1-10 mTorr) was investigated. We found that hydrophilic activity as well as the structural and optical properties of the films were strongly related to the pressure maintained during the deposition. The TiO2 film structure and surface morphology were studied by X-ray diffr
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11

Yang, F. L., R. E. Somekh, and A. L. Greer. "UHV magnetron sputtering of silver films on rocksalt: quantitative X-ray texture analysis of substrate-temperature-dependent microstructure." Thin Solid Films 322, no. 1-2 (1998): 46–55. http://dx.doi.org/10.1016/s0040-6090(97)00938-3.

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12

Khan, Jakeer, N. Selvakumar, Prasanta Chowdhury, and Harish C. Barshilia. "Indigenous development of ultra high vacuum (UHV) magnetron sputtering system for the preparation of Permalloy magnetic thin films." Journal of Physics: Conference Series 390 (November 5, 2012): 012081. http://dx.doi.org/10.1088/1742-6596/390/1/012081.

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13

Horprathum, M., P. Chindaudom, P. Limnonthakul, et al. "Fabrication and Characterization of Hydrophilic TiO2Thin Films on Unheated Substrates Prepared by Pulsed DC Reactive Magnetron Sputtering." Journal of Nanomaterials 2010 (2010): 1–7. http://dx.doi.org/10.1155/2010/841659.

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TiO2thin films were deposited on unheated silicon wafers (100) and glass slides by a pulsed DC reactive magnetron sputtering in an ultrahigh vacuum (UHV) system. The effects of both an operating pressure and deposition time on film structure, surface morphology, and optical property were studied. The film structure and microstructure were characterized by grazing-incidence X-ray diffraction (GIXRD) technique and transmission electron microscopy (TEM). The surface morphology was investigated by field emission scanning electron microscopy (FE-SEM). The optical property of theTiO2thin films was d
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14

Moser, J. H., F. Tian, O. Haller, et al. "Single-phase polycrystalline Ti1−xWxN alloys (0⩽x⩽0.7) grown by UHV reactive magnetron sputtering: microstructure and physical properties." Thin Solid Films 253, no. 1-2 (1994): 445–50. http://dx.doi.org/10.1016/0040-6090(94)90364-6.

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15

Hamada, Masaya, Kentaro Matsuura, Takuro Sakamoto, et al. "High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization." IEEE Journal of the Electron Devices Society 7 (2019): 1258–63. http://dx.doi.org/10.1109/jeds.2019.2943609.

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16

Wang, C. H., T. J. Jackson, R. E. Somekh, J. A. Leake, and J. E. Evetts. "Linked magnetron sputtering and pulsed laser deposition UHV chambers for the preparation of epitaxial metal/metal oxide thin film multilayers." Measurement Science and Technology 8, no. 9 (1997): 978–85. http://dx.doi.org/10.1088/0957-0233/8/9/004.

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17

Matsubara, Katsuki, Mitsuru Ohtake, Kousuke Tobari, and Masaaki Futamoto. "Structure and magnetic properties of Fe epitaxial thin films prepared by UHV rf magnetron sputtering on GaAs single-crystal substrates." Thin Solid Films 519, no. 23 (2011): 8299–302. http://dx.doi.org/10.1016/j.tsf.2011.03.079.

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18

Lloyd, S. J., and R. E. Dunin-Borkowski. "The Effect of Fe Layer Width on the Electron Structure of Ferromagnetic Face Centered Tetragonal Fe-Cu Multilayers." Microscopy and Microanalysis 3, S2 (1997): 517–18. http://dx.doi.org/10.1017/s1431927600009478.

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The mean specimen potentials across a series of short period coherent face centered ferromagnetic Fe-Cu multilayers, grown on (001) Cu by UHV DC magnetron getter sputtering, have been measured using Fresnel contrast analysis1 in the transmission electron microscope. Multilayers A, B and C nominally had 100 repeats of (Fe2/Cu15), (Fe4Cu13) and (Fe6/Cu9) in units of atomic layers, and saturation magnetizations at 0K of 1.7, 0.7 and 0.8μB/Fe atom, respectively. X-ray diffraction measurements showed that the average (002) spacing in each multilayer was much greater than conventional elasticity the
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19

Bíró, Domokos, László Jakab-Farkas, András Kelemen, et al. "Effect of Oxygen Doping on the Structure of TiN Surface Coatings." MACRo 2015 1, no. 1 (2015): 315–24. http://dx.doi.org/10.1515/macro-2015-0031.

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AbstractIn the present work the influence of the level of oxygen doping on the structure of TiN films was investigated by dedicated experiments. The films were deposited at 400°C in an all metal UHV device by unbalanced magnetron sputtering at the same Ar and nitrogen flow rates, but the oxygen flow rate was changed in the experiments, incorporating oxygen in the range of 4 and 20 at.%. The structure of the films was investigated by XRD, Auger electron (AES) and X-ray photon electron (XPS) spectroscopy and transmission electron microscopy (TEM). The results discovered the crystal face anisotro
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20

Seppänen, T., György Z. Radnóczi, Sukkaneste Tungasmita, L. Hultman, and J. Birch. "Growth and Characterization of Epitaxial Wurtzite Al1-xInxN Thin Films Deposited by UHV Reactive Dual DC Magnetron Sputtering." Materials Science Forum 433-436 (September 2003): 987–90. http://dx.doi.org/10.4028/www.scientific.net/msf.433-436.987.

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21

Kubota, Hitoshi, A. Fukushima, Y. Ootani, et al. "Magnetization Reversal by Spin-Polarized Current in Magnetic Tunnel Junctions with MgO Barriers." Advances in Science and Technology 45 (October 2006): 2633–39. http://dx.doi.org/10.4028/www.scientific.net/ast.45.2633.

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Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions were fabricated using UHV magnetron sputtering. Magnetoresistance and spin-transfer switching properties were investigated as a function of Co-Fe-B free layer thickness, between 1.5 nm and 3 nm. The intrinsic switching current and the thermal stability were derived from the pulse duration dependence of the switching current, analyzed based on the thermally activated switching model. Both switching currents, corresponding to parallel (P) to antiparallel (AP) (Ic0 +) and AP to P (Ic0 –) magnetization reversal, were found to be roughly proportional to
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22

"UHV magnetron sputtering cathodes." Metal Finishing 93, no. 3 (1995): 46. http://dx.doi.org/10.1016/0026-0576(95)90620-7.

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23

Hudson, C., and R. E. Somekh. "Stresses in UHV Planar Magnetron Sputtered Films." MRS Proceedings 239 (1991). http://dx.doi.org/10.1557/proc-239-145.

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ABSTRACTA method has been developed to measure the stress in films which have been sputtered using a planar magnetron in a small-scale UHV chamber. The stress has been measured for diffent materials as a function of the sputtering gas pressure P and the substrate-target distance d. It is found that the stress in films of the same material deposited at different values of d is dependent only on the pressure-distance product (Pd), except at short (less than about 30mm) distances. The value of Pd required to produce a stress-free film is found to increase with the more extreme ratios between the
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24

Bryden, Wayne A., Scott A. Ecelberger, and Thomas J. Kistenmacher. "Evolution of Electrical Properties with Thermal Annealing for Seeded Heteroepitaxial InN Thin Films." MRS Proceedings 280 (1992). http://dx.doi.org/10.1557/proc-280-509.

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ABSTRACTTwo related studies of the effects of elevated temperature annealing on reactive rf magnetron sputtered InN films have been conducted. In the first study, thin films of InN were deposited and annealed in 5 mTorr of nitrogen gas using a conventional high-vacuum (HV) magnetron sputtering system. Films were grown at 100°C and following annealing at an elevated temperature (Ta) for 4 hours were removed from the system for physical characterization. The physical properties of the annealed films improved with thermal treatment and were strikingly coincident with the properties of a second se
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25

Ahuja, Rajiv, and Hamish L. Fraser. "Structural Transitions in Titanium-Aluminum Thin Film Multilayers." MRS Proceedings 317 (1993). http://dx.doi.org/10.1557/proc-317-479.

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ABSTRACTThis paper presents the results of a detailed study of titanium - aluminum thin film multilayers fabricated using UHV Magnetron sputtering. Transmission electron Microscopy (TEM) techniques have been used to characterize the structure of these multilayers and to study the various structural transitions as a function of the composition modulation wavelength (CMW). Evidence is presented which indicates the existence of a titanium based fcc structure in these films, below a critical CMW. At even smaller values of CMW, both the Ti and Al layers adopt the hep structure and are coherent with
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26

Morris, G. W., R. E. Somekh, Z. H. Barber, E. J. Williams, W. W. Schmahl, and J. E. Evetts. "The Sputter Deposition and Characterisation of Epitaxial Magnesium Oxide Thin Films and Them Use as a Sappihre/YBCO Buffer Layer." MRS Proceedings 169 (1989). http://dx.doi.org/10.1557/proc-169-1145.

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AbstractIf useful electronic devices are to be fabricated from thin films of the high critical temperature oxide superconductors, such as yttrium barium copper oxide (YBCO), then films must be formed on substrates with dielectric properties which permit device operation at high frequencies, such as sapphire. It is, however, difficult to form high quality YBCO on sapphire because of reaction with the substrate and because epitaxy is not readily achieved.We report the deposition of epitaxial thin films of magnesium oxide, by UHV reactive d.c. magnetron sputtering, on variously orientated substra
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27

Lucadamo, G., C. Lavoie, C. Cabral, R. A. Carruthers, and J. M. E. Harper. "In situ and Ex situ Measurements of Stress Evolution in the Cobalt-Silicon System." MRS Proceedings 611 (2000). http://dx.doi.org/10.1557/proc-611-c6.3.1.

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ABSTRACTThe biaxial stress in Co thin-films has been investigated in situ by measuring changes in substrate curvature that occurred during deposition and annealing.Films of Co, 35 to 500 nm in thickness, were deposited by UHV magnetron sputtering at room temperature on Si (100) and poly-Si substrates.Results show that during Co deposition the bending force increased linearly with film thickness; a signature of constant stress.In addition, the stress evolution during silicide formation was measured under constant heating rate conditions from room temperature up to 700°C. The stress-temperature
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28

Sarcona, G., F. Lin, M. K. Hatalis, A. F. Cserhati, Eva Austin, and D. W. Greve. "Electrical and Structural Properties of Cobalt Annealed on Silicon-Germanium Epilayers." MRS Proceedings 281 (1992). http://dx.doi.org/10.1557/proc-281-647.

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ABSTRACTThe structural and electrical properties of cobalt annealed on heteroepitaxial, strained-layer silicon-germanium were studied by transmission electron microscopy, four-point-probe and four-terminal resistor resistivity measurements, and junction diodes. The I50nm thick epitaxial p-Si0.87Ge0.13 was grown by UHV-CVD at 590°C. Cobalt was deposited by DC magnetron sputtering. The cobalt was rapid-thermally annealed at various temperatures in forming gas.The cobalt film and the SiGe layer reacted, as illustrated by changes in their film thicknesses, and increased interfacial roughness. The
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29

Meng, W. J., J. A. Sell, G. L. Eesley, and T. A. Perry. "Real Time Stress Measurements During Growth of Aluminum Nitride on SI(111) and SI(001)." MRS Proceedings 308 (1993). http://dx.doi.org/10.1557/proc-308-21.

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ABSTRACTWe have performed real time measurements of intrinsic stresses during growth by reactive dc magnetron sputtering of aluminum nitride (AlN) thin films on silicon substrates in an UHV growth chamber. An experimental setup based on laser beam reflection is constructed such that substrate curvature as well as film thickness can be continuously monitored as growth proceeds. On Si(111) substrates, stress measurements were carried out during growth of both polycrystalline and epitaxial A1N films as a function of deposition pressure. This is the first such comparative study to our knowledge fo
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30

Banerjee, R., J. P. Fain, G. B. Thompson, P. M. Anderson, and H. L. Fraser. "Processing, Microstructure, and Fracture Behavior of Nickel/ Nickel Aluminide Multilayered Thin Films." MRS Proceedings 594 (1999). http://dx.doi.org/10.1557/proc-594-19.

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AbstractThe Ni-Ni3Al system is the basis of a large number of Ni-based superalloys used extensively in the aerospace industry. The mechanical properties of bulk superalloys, which primarily consist of a Ni-based fcc matrix reinforced with cubic precipitates of Ni3Al, have been extensively researched. The goal of the present study is to investigate the mechanical properties of multilayered Ni / Ni3Al nanocomposites in the thin film form. These multilayers have been processed using UHV magnetron sputtering by alternate deposition of pure elemental Ni and Ni-25at%Al layers in the range of 20 nm –
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31

Morton, Simon A., D. Greig, C. G. H. Walker, et al. "Electron Transport and Photoemission Studies of Amorphous CaAl Thin Films." MRS Proceedings 375 (1994). http://dx.doi.org/10.1557/proc-375-45.

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AbstractAmorphous alloys of the binary system CaAl are known to have highly unusual electron transport properties with resistivities up to 450μΣcm and a Hall coefficient that deviates from free electron values at Ca concentrations higher than 45 atomic percent. For amorphous CaMg alloys, on the other hand, the resistivity is very much less and this great difference between the two sets of alloys is not fully understood.We report on the correlation of photoemission and transport measurements made on two sets of amorphous CaAl and CaMg alloys prepared by magnetron sputtering in such a way that w
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