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Journal articles on the topic 'Ultra-violet (UV) photodetectors'

Author: Grafiati

Published: 6 September 2023

Last updated: 31 July 2025

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1

Jacob, Anju Anna, L. Balakrishnan, S. R. Meher, K. Shambavi, and Z. C. Alex. "Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis." International Journal of Nanoscience 17, no. 01n02 (2017): 1760015. http://dx.doi.org/10.1142/s0219581x17600158.

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Zinc oxide (ZnO) is a wide bandgap semiconductor with excellent photoresponse in ultra-violet (UV) regime. Tuning the bandgap of ZnO by alloying with cadmium can shift its absorption cutoff wavelength from UV to visible (Vis) region. Our work aims at synthesis of Zn[Formula: see text]CdxO nanoparticles by co-precipitation method for the fabrication of photodetector. The properties of nanoparticles were analyzed using X-ray diffractometer, UV–Vis spectrometer, scanning electron microscope and energy dispersive spectrometer. The incorporation of cadmium without altering the wurtzite structure re

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Sharaf, Afsal, Shantikumar Nair, and Laxman Raju Thoutam. "Engineered ultra-wide bandgap Sm₂O₃/MWCNT nanocomposites for deep-ultra violet photodetectors." Nanotechnology 36, no. 13 (2025): 135706. https://doi.org/10.1088/1361-6528/adab7d.

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Abstract The current work focuses on the synthesis and control of cubic vs monoclinic phase structures of Sm2O3 via., cost-effective solution-based sol–gel technique. The structural analysis of the as-synthesized Sm2O3 powder reveals the phase-change from initial mixture of cubic and monoclinic phases (82:18) to almost cubic phase (96:4), with increase of polyethylene glycol 600 additive from 2% to 25% respectively. The dark-current of the films made from as-synthesized Sm2O3 powder revealed no measurable current, indicates its high defect tolerance against growth conditions. The multi-walled

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3

Ying, Haoting, Xin Li, Yutong Wu, et al. "High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes." Nanoscale Advances 1, no. 10 (2019): 3973–79. http://dx.doi.org/10.1039/c9na00471h.

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De Souza, Michelly, Olivier Bulteel, Denis Flandre, and Marcelo Antonio Pavanello. "Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 107–13. http://dx.doi.org/10.29292/jics.v6i2.346.

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This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior

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Lee, Youngmin, Soo Youn Kim, Deuk Young Kim та Sejoon Lee. "Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure". Nanomaterials 10, № 8 (2020): 1486. http://dx.doi.org/10.3390/nano10081486.

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The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs). The device was fabricated through a simple fabrication technique of β-phase PFO coating onto YZO-NRs that had been directly grown on graphene by the hydrothermal synthesis method. Under UV illumination (λ = 365 nm), the device clearly showed excellent photoresponse characteristics (e.g., high quantum efficiency ~690%, high photodetectivity ~3.34 × 1012 cm·Hz1/2·W−1, and fast response time ~0.1

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Ajmal, Hafiz Muhammad Salman, Fasihullah Khan, Noor Ul Huda, et al. "High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates." Nanomaterials 9, no. 8 (2019): 1067. http://dx.doi.org/10.3390/nano9081067.

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As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyet

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Kang, Seong Jae, Jun Hyung Jeong, Jin Hyun Ma, et al. "Enhancement of the Visible Light Photodetection of Inorganic Photodiodes via Additional Quantum Dots Layers." Micromachines 15, no. 3 (2024): 318. http://dx.doi.org/10.3390/mi15030318.

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Visible light photodetectors are extensively researched with transparent metal oxide holes/electron layers for various applications. Among the metal oxide transporting layers, nickel oxide (NiO) and zinc oxide (ZnO) are commonly adopted due to their wide band gap and high transparency. The objective of this study was to improve the visible light detection of NiO/ZnO photodiodes by introducing an additional quantum dot (QD) layer between the NiO and ZnO layers. Utilizing the unique property of QDs, we could select different sizes of QDs and responsive light wavelength ranges. The resulting red

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Fu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.

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Due to their large bandgap, high critical electric field, and availability of high-quality large-size melt-grown bulk substrates, III-oxides including Ga2O3, Al2O3, In2O3, and their alloys have been extensively investigated for a myriad of electronic and optoelectronic applications. Recently, β-Ga2O3 based power electronics, RF transistors, and ultraviolet (UV) photodetectors have been demonstrated with promising performance. However, p-type β-Ga2O3 is still elusive due to high dopant activation energy (>1 eV), large hole effective mass, and hole trapping. This significantly limits the desi

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9

Biondo, Stéphane, Mihai Lazar, Laurent Ottaviani, et al. "Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour." Materials Science Forum 711 (January 2012): 114–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.114.

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In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p+-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an ex

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Rahman, Shafaque, Rana Tabassum, and Aurangzeb Khurram Hafiz. "Role of MoS2/GNR heterostructures in the performance engineering of ultra-violet (UV) photodetector." Optics & Laser Technology 172 (May 2024): 110494. http://dx.doi.org/10.1016/j.optlastec.2023.110494.

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11

Li, Bin, Jin Wei Liu, Hao Luo, Chao Yu Feng, and Xiao Xiao Duan. "The Warning Measurement System of Erythema Time with Ultra Violet Photodevice and Properties of Biological Filtration Materials." Advanced Materials Research 643 (January 2013): 9–12. http://dx.doi.org/10.4028/www.scientific.net/amr.643.9.

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This proposal is directed toward the development of innovative high-efficiency UV photodevice based on the wide bandgap III-nitride (GaN-based) semiconductors for reliable operation at the solar radiation action spectrum for human. This paper uses the UVM-30 photodetector to measure the UVI and the max exposure time (Erythema Time) in sun real time with a simple linear function relationship circuit, and introduces the function, performance, system configuration as well as the partial flow chart of the flowmeter.

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12

Ali, A. M., A. S. Mohammed, and S. M. Hanfoosh. "The spectral responsivity enhancement for gallium-doped CdO/PS heterojunction for UV detector." Journal of Ovonic Research 17, no. 3 (2021): 239–45. http://dx.doi.org/10.15251/jor.2021.173.239.

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Despite the large number of studies on CdO, it was until very recently the system properties Ga-doped CdO/PS was not recognize well. In this paper, photodetector of Gadoped CdO/Si and Ga-doped CdO/PS nanocrystalline with different Ga ratios (0, 3, and 7%) have been prepare by spray pyrolysis deposition (SPD). The structural properties of un doped CdO and doped films were characterized by X-ray diffraction, which refer to that the CdO thin films have cubic structure. The energy gap of un doped film and doped with Ga increased from 2.5 to 3.56 eV with increasing Ga ratios. I-V characteristics of

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13

Alqanoo, Anas A. M., Naser M. Ahmed, Md R. Hashim, et al. "Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector." Nanomaterials 13, no. 2 (2023): 353. http://dx.doi.org/10.3390/nano13020353.

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The applications of silver nanowires (AgNWs) are clearly relevant to their purity and morphology. Therefore, the synthesis parameters should be precisely adjusted in order to obtain AgNWs with a high aspect ratio. Consequently, controlling the reaction time versus the reaction temperature of the AgNWs is crucial to synthesize AgNWs with a high crystallinity and is important in fabricating optoelectronic devices. In this work, we tracked the morphological alterations of AgNWs during the growth process in order to determine the optimal reaction time and temperature. Thus, here, the UV–Vis absorp

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14

Et. al., Harpreet Kaur,. "Simulation of AlGaN MSM detector for investigating the effect varying absorber layer thickness." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 1S (2021): 445–51. http://dx.doi.org/10.17762/turcomat.v12i1s.1902.

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For detecting feeble Ultra-Violet (UV) signals it is essential that front-illuminated photodetector (PD) should havethick photo-absorbing layer with thin transparent metal electrodes and antireflective coating (ARC) so as to getmore photocurrent and low dark current.Since detector geometry influences its performance, so it is very important to optimize layer thickness parameters. In proposed work fixed area Al0.5Ga0.5N/AlN/ Sapphire based Metal-Semiconductor-Metal (MSM)PDbased has been analyzed for optimum value of active layer thickness and inter-electrode thickness.In addition to take benefi

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Li, Xiu-Hua, Min Zhang, Jia Yang, et al. "Effect of film thickness on photoelectric properties of <inline-formula><tex-math id="Z-20220216211654">\begin{document}${\boldsymbol{\beta}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="4-20211744_Z-20220216211654.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="4-20211744_Z-20220216211654.png"/></alternatives></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> films prepared by radio frequency magnetron sputtering." Acta Physica Sinica 71, no. 4 (2022): 048501. http://dx.doi.org/10.7498/aps.71.20211744.

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In this work, β-Ga<sub>2</sub>O<sub>3</sub> films with different thickness are prepared on (001) sapphire substrates at room temperature by the radio frequency magnetron sputtering technology, then the samples are annealed in an Ar atmosphere at 800 ℃ for 1h. The effects of film thickness on the phase composition, surface morphology, optical property, and photoelectric detection performance are investigated using XRD, SEM, UV-Vis spectrophotometer, PL photoluminescence spectrometer, and Keithley 4200-SCS semiconductor characterization system. The results show that as th

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16

Rajan, Akshta, Ayushi Paliwal, Vinay Gupta, and Monika Tomar. "Plasmonic Enhancement of Optical Absorption of UV Radiation in ZnO Thin Film Based Ultraviolet Photodetectors." MRS Proceedings 1509 (2013). http://dx.doi.org/10.1557/opl.2013.352.

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ABSTRACTUltraviolet (UV) photoconductivity in pure ZnO thin films and metal (Ag, Au, Pt) nanoparticles (NPs) dispersed on ZnO thin films based UV photodetectors biased at 5 V for ultra violet radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. All the three metal (Ag, Au, Pt) NPs synthesized by Polyol process when dispersed on the surface of 100 nm thin ZnO film results in enhanced photoconductive gain (K) in comparison to pure ZnO (3.1×103). An increase of about an order in K has been obtained in the case of Ag NPs/ZnO and Au NPs/ZnO UV photodetectors ( K = 6.9×104 and 5.3×

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17

Patil, Kalyanee, Kanchan Barve, Akshaya Pisal, Satishchandra Ogale, and Tejashree Bhave. "A Paper‐Based Robust Hybrid Photodetector Based on the 2D/0D/0D MoS₂/N‐GQD/CsPbBr₃ Triple Junction." Advanced Materials Technologies, January 20, 2025. https://doi.org/10.1002/admt.202401868.

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AbstractFlexible photodetectors (FPDs) are emerging as essential components for next‐generation wearable optoelectronic devices, bendable imaging sensors, and implantable optoelectronics. However, the development of high‐performance FPDs hinges on the identification of innovative material systems that combine excellent optoelectronic properties, efficient charge transport, and scalable processing techniques. In this study, these challenges by introducing a novel hybrid paper‐based photodetector featuring a 2D MoS₂/N‐doped Graphene Quantum Dot (N‐GQD)/CsPbBr₃ quantum dot triple junction are add

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18

Khan, Taslim, Pallavi Aggarwal, Fu‐Gow Tarntair та ін. "Enhanced Performance of Self‐Powered γ‐Ray Irradiated MSM Deep UV Photodetector Based on MOCVD‐Grown ZnGa₂O₄ for Space Exploration". Advanced Materials Technologies, 27 вересня 2024. http://dx.doi.org/10.1002/admt.202400615.

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AbstractThe utilization of device for the space explorations, the active material of the device must show resilience toward cosmos radiation. In this work, the radiation hardness of ZnGa2O4‐based deep ultra‐violet (DUV) photodetectors (PDs) is examined using γ‐ray irradiation. Responsivity of the photodetector at zero bias is found to improve from 0.98 to 1.94 mA W−1, the dark current increased from 0.11 to 5.6 pA, while photo‐to‐dark current ratio (PDCR) increased the from 3.2 × 103 to 3.1 × 104 and the photocurrent decay time improved from 220 to 190 ms. The high‐resolution X‐ray photoelectr

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19

Apéstigue, V., D. Toledo, P. G. J. Irwin, et al. "The Uranus Multi-Experiment Radiometer for Haze and Clouds Characterization." Space Science Reviews 220, no. 1 (2024). http://dx.doi.org/10.1007/s11214-023-01040-3.

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AbstractThe aerosols (clouds and hazes) on Uranus are one of the main elements for understanding the thermal structure and dynamics of its atmosphere. Aerosol particles absorb and scatter the solar radiation, directly affecting the energy balance that drives the atmospheric dynamics of the planet. In this sense, aerosol information such as the vertical distribution or optical properties is essential for characterizing the interactions between sunlight and aerosol particles at each altitude in the atmosphere and for understanding the energy balance of the planet’s atmosphere. Moreover, the dist

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Chatterjee, Anamika, Kathirvel A, Thirugnasambandam G. Manivasagam, and Sudip K. Batabyal. "Self‐Powered Biological UV Photodetector Based on Live Freshwater Green Algae." Advanced Sustainable Systems, September 24, 2024. http://dx.doi.org/10.1002/adsu.202400480.

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AbstractThis study introduces a remarkably sensitive self‐powered Ultra Violet (UV) photodetector utilizing photosynthetic algae coupled with modified electrodes. The device achieves exceptional sensitivity and stability in photodetection under self‐powered operation by leveraging photosynthetic green algae. Notably, the device demonstrates impressive responsivity, and detectivity of 0.44 A W−1, and 4 ×1010 Jones respectively for 365 nm of the incident light with the lowest intensity of 530 nW cm−2 at zero bias condition. Additionally, it exhibits rapid rise and decay times, clocking in at 0.1

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Chen, Menglu, QiQi Zheng, Yu Yang, et al. "Ultra-Violet and Infrared Dual-band Photodetector via Ga₂O₃ Thin Film and HgTe Colloidal Quantum Dot." Nanoscale Advances, 2025. https://doi.org/10.1039/d4na00978a.

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Dual-band photodetection for ultraviolet (UV) and infrared (IR) light is an advanced technology aimed at simultaneously or selectively detecting signals from these two distinct wavelength bands. This technique offer broad...

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