Log in

Relevant bibliographies by topics / Ultrathin oxides / Journal articles

To see the other types of publications on this topic, follow the link: Ultrathin oxides.

Journal articles on the topic 'Ultrathin oxides'

Author: Grafiati

Published: 8 June 2024

Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Ultrathin oxides.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Bec, Romulad B., Andrzej Jakubowsk, Lidia Łukasiak, and Michał Korwin-Pawłowski. "Challenges in ultrathin oxide layers formation." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2001): 27–34. http://dx.doi.org/10.26636/jtit.2001.1.46.

Full text

Abstract:

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the Roadmap 2000. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are brie y described and their pros and cons are discussed.

APA, Harvard, Vancouver, ISO, and other styles

2

Taylor, Seth T., John Mardinly, and Michael A. O'Keefe. "HRTEM Image Simulations for the Study of Ultrathin Gate Oxides." Microscopy and Microanalysis 8, no. 5 (2002): 412–21. http://dx.doi.org/10.1017/s1431927602020123.

Full text

Abstract:

We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultrathin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16-Å-thick gate oxide. Simulated images were calculated for structures viewed in cross section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size, and orientation. Defect morp

APA, Harvard, Vancouver, ISO, and other styles

3

Zhu, Jianhui, Jian Jiang, Wei Ai, et al. "Encapsulation of nanoscale metal oxides into an ultra-thin Ni matrix for superior Li-ion batteries: a versatile strategy." Nanoscale 6, no. 21 (2014): 12990–3000. http://dx.doi.org/10.1039/c4nr03661a.

Full text

Abstract:

A versatile strategy of encapsulating nanoscale metal oxides into ultrathin Ni “armors” is proposed for superior anodes of LIBs. The hybrids of metal oxide@Ni show drastic improvements in the capacity retention, long-term cyclic stability and rate performance.

APA, Harvard, Vancouver, ISO, and other styles

4

Huang, Feng, W. J. Liu, J. F. Sullivan, J. A. Barnard, and M. L. Weaver. "Room-temperature oxidation of ultrathin TiB2 films." Journal of Materials Research 17, no. 4 (2002): 805–13. http://dx.doi.org/10.1557/jmr.2002.0118.

Full text

Abstract:

Titanium diboride has been claimed as a very promising candidate material for protective applications in the magnetic recording. Its oxidation resistance at room temperature is a critical criterion in assessing this application potential. In this paper, the oxidation characteristics of ultrathin TiB2 thin films, such as overcoat erosion and oxide thickness, are investigated via a combination of x-ray reflectivity, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy. It was found that a <2-h exposure to air at room temperature led to the formation of approximately 15-Å-thick,

APA, Harvard, Vancouver, ISO, and other styles

5

Morgen, P., A. Bahari, U. Robenhagen, et al. "Roads to ultrathin silicon oxides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 1 (2005): 201–7. http://dx.doi.org/10.1116/1.1842113.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Wang, Kai, Bolong Huang, Weiyu Zhang, et al. "Ultrathin RuRh@(RuRh)O2 core@shell nanosheets as stable oxygen evolution electrocatalysts." Journal of Materials Chemistry A 8, no. 31 (2020): 15746–51. http://dx.doi.org/10.1039/d0ta03213a.

Full text

Abstract:

We report a novel architecture of ultrathin RuRh@(RuRh)O<sub>2</sub> core/shell nanosheets with a core of ultrathin metallic RuRh nanosheets and a shell of (RuRh)O<sub>2</sub> oxides as a superb electrocatalyst toward the oxgen evolution reaction (OER), better than most of the state-of-the-art Ru-based or Ir-based electrocatalysts. Moreover, the RuRh@(RuRh)O<sub>2</sub> core/shell nanosheets exhibit good durability because the (RuRh)O<sub>2</sub> oxide shell protects the normally labile RuRh NS core against dissolution during the OER process.

APA, Harvard, Vancouver, ISO, and other styles

7

Lobinsky, A. A., and V. I. Popkov. "Ultrathin 2D nanosheets of transition metal (hydro)oxides as prospective materials for energy storage devices: A short review." Electrochemical Materials and Technologies 1, no. 1 (2022): 20221008. http://dx.doi.org/10.15826/elmattech.2022.1.008.

Full text

Abstract:

The ultrathin two-dimensional (2D) transition metal oxides and hydroxides (TMO and TMH) nanosheets are attractive for creating high-performance energy storage devices due to a set of unique physical and chemical properties. Flat 2D structure of such materials provides a sufficient number of active adsorption centers, and the ultra-small thickness, on the order of several nanometers, provides fast charge transfer, which significantly improves electronic conductivity. This brief review summarizes recent progress in the synthesis of materials based on ultrathin 2D nanosheets for energy storage ap

APA, Harvard, Vancouver, ISO, and other styles

8

Rotondaro, A. L. Pacheco, R. T. Laaksonen, and S. P. Singh. "Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor Parameters." Journal of Integrated Circuits and Systems 2, no. 2 (2007): 63–66. http://dx.doi.org/10.29292/jics.v2i2.265.

Full text

Abstract:

The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were analyzed. It was observed that increasing the nitrogen concentration in the gate oxide results in a negative shift of the threshold voltage for both NMOS and PMOS devices and a degradation of the hole mobility. It was also observed that pchannel transistors are more sensitive to the nitrogen concentration of the gate oxide than n-channel transisto

APA, Harvard, Vancouver, ISO, and other styles

9

Ting, D. Z. Y. "Tunneling characteristics of nonuniform ultrathin oxides." Applied Physics Letters 73, no. 19 (1998): 2769–71. http://dx.doi.org/10.1063/1.122585.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Ting, D. Z. Y., Erik S. Daniel, and T. C. Mcgill. "Interface Roughness Effects in Ultra-Thin Tunneling Oxides." VLSI Design 8, no. 1-4 (1998): 47–51. http://dx.doi.org/10.1155/1998/23567.

Full text

Abstract:

Advanced MOSFET for ULSI and novel silicon-based devices require the use of ultrathin tunneling oxides where non-uniformity is often present. We report on our theoretical study of how tunneling properties of ultra-thin oxides are affected by roughness at the silicon/oxide interface. The effect of rough interfacial topography is accounted for by using the Planar Supercell Stack Method (PSSM) which can accurately and efficiently compute scattering properties of 3D supercell structures. Our results indicate that while interface roughness effects can be substantial in the direct tunneling regime,

APA, Harvard, Vancouver, ISO, and other styles

11

Chari, K. S., and S. Kar. "Interface Characteristics of Metal‐Oxide‐Semiconductor Capacitors with Ultrathin Oxides." Journal of The Electrochemical Society 138, no. 7 (1991): 2046–49. http://dx.doi.org/10.1149/1.2085921.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Choi, B. D., and D. K. Schroder. "Degradation of ultrathin oxides by iron contamination." Applied Physics Letters 79, no. 16 (2001): 2645–47. http://dx.doi.org/10.1063/1.1410363.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Donggun Park and Chenming Hu. "Plasma charging damage on ultrathin gate oxides." IEEE Electron Device Letters 19, no. 1 (1998): 1–3. http://dx.doi.org/10.1109/55.650333.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Wen, H. J., and R. Ludeke. "Localized degradation studies of ultrathin gate oxides." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16, no. 3 (1998): 1735–40. http://dx.doi.org/10.1116/1.581293.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Hamed, Mai Hussein, David N. Mueller та Martina Müller. "Thermal phase design of ultrathin magnetic iron oxide films: from Fe3O4 to γ-Fe2O3 and FeO". Journal of Materials Chemistry C 8, № 4 (2020): 1335–43. http://dx.doi.org/10.1039/c9tc05921k.

Full text

Abstract:

Thermodynamically “active” oxide interfaces alter the standard iron oxide phase diagram of complex heterostructures. By controlling the effective oxygen pressure, selected iron oxides phases can be designed through a thermal phase design.

APA, Harvard, Vancouver, ISO, and other styles

16

Eng, J., R. L. Opila, J. M. Rosamilia, et al. "The Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic Characterization." Solid State Phenomena 76-77 (January 2001): 145–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.145.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Takeda, Mikako, Takeshi Ohwaki, Hideo Fujii, et al. "Influence of Native Oxides on the Reliability of Ultrathin Gate Oxide." Japanese Journal of Applied Physics 37, Part 1, No. 2 (1998): 397–401. http://dx.doi.org/10.1143/jjap.37.397.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Chen, Zongkun, Minghua Huang, and Helmut Cölfen. "Synthesis of ultrathin metal oxide and hydroxide nanosheets using formamide in water at room temperature." CrystEngComm 23, no. 21 (2021): 3794–801. http://dx.doi.org/10.1039/d1ce00277e.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Liao, Zhaoliang, and Jiandi Zhang. "Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures." Applied Sciences 9, no. 1 (2019): 144. http://dx.doi.org/10.3390/app9010144.

Full text

Abstract:

Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlate

APA, Harvard, Vancouver, ISO, and other styles

20

Hardy, An, Sven Van Elshocht, Jan D’Haen, et al. "Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films." Journal of Materials Research 22, no. 12 (2007): 3484–93. http://dx.doi.org/10.1557/jmr.2007.0433.

Full text

Abstract:

Ultrathin lanthanide (Nd, Pr, Eu, Sm) oxide films with functional dielectric properties down to 3.3 nm thickness were deposited by aqueous chemical solution deposition (CSD) onto hydrophilic SiO2/Si substrates. Precursor solutions were prepared from the oxides via an intermediate, solid Ln(III)citrate. A film heat treatment scheme was derived from thermogravimetric analysis of the precursor gels, showing complete decomposition by 600 °C. Crystalline phase formation in the films depended on the lanthanide, annealing temperature, and citric acid content in the precursor. Through variation of the

APA, Harvard, Vancouver, ISO, and other styles

21

Fukuda, Masatoshi, Wataru Mizubayashi, Atsushi Kohno, Seiichi Miyazaki, and Masataka Hirose. "Analysis of Tunnel Current through Ultrathin Gate Oxides." Japanese Journal of Applied Physics 37, Part 2, No. 12B (1998): L1534—L1536. http://dx.doi.org/10.1143/jjap.37.l1534.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Chen, C. C., C. Y. Chang, C. H. Chien, T. Y. Huang, H. C. Lin, and M. S. Liang. "Temperature-accelerated dielectric breakdown in ultrathin gate oxides." Applied Physics Letters 74, no. 24 (1999): 3708–10. http://dx.doi.org/10.1063/1.123228.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Hori, Takashi, Hiroshi Iwasaki, Takuichi Ohmura, Atsuko Samizo, Minoru Sato, and Yoshiaki Yoshioka. "Compositional study of ultrathin rapidly reoxidized nitrided oxides." Journal of Applied Physics 65, no. 2 (1989): 629–35. http://dx.doi.org/10.1063/1.343095.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Hattori, Takeo, Hiroshi Nohira, and Kensuke Takahashi. "The initial growth steps of ultrathin gate oxides." Microelectronic Engineering 48, no. 1-4 (1999): 17–24. http://dx.doi.org/10.1016/s0167-9317(99)00329-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Contaret, T., G. Ghibaudo, A. Ferron, and F. Bœuf. "Excess drain noise simulation in ultrathin oxides MOSFETs." Journal of Computational Electronics 5, no. 2-3 (2006): 187–92. http://dx.doi.org/10.1007/s10825-006-8842-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Zander, D., F. Saigne, C. Petit, and A. Meinertzhagen. "Electrical stress effects on ultrathin (2.3 nm) oxides." Journal of Non-Crystalline Solids 280, no. 1-3 (2001): 86–91. http://dx.doi.org/10.1016/s0022-3093(00)00393-8.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Chang, Chun-Yen, Chi-Chun Chen, Horng-Chih Lin, Mong-Song Liang, Chao-Hsin Chien, and Tiao-Yuan Huang. "Reliability of ultrathin gate oxides for ULSI devices." Microelectronics Reliability 39, no. 5 (1999): 553–66. http://dx.doi.org/10.1016/s0026-2714(99)00037-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Giustino, Feliciano, and Alfredo Pasquarello. "Infrared properties of ultrathin oxides on Si(100)." Microelectronic Engineering 80 (June 2005): 420–23. http://dx.doi.org/10.1016/j.mee.2005.04.025.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Zhang, Xinyu, Yongwei Wang, Fenghua Cheng, Zhiping Zheng, and Yaping Du. "Ultrathin lanthanide oxides nanomaterials: synthesis, properties and applications." Science Bulletin 61, no. 18 (2016): 1422–34. http://dx.doi.org/10.1007/s11434-016-1155-2.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Vereecke, G., E. Röhr, R. J. Carter, T. Conard, H. De Witte, and M. M. Heyns. "Investigation of fluorine in dry ultrathin silicon oxides." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 6 (2001): 2108. http://dx.doi.org/10.1116/1.1414050.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Cellere, G., L. Larcher, M. G. Valentini, and A. Paccagnella. "Micro breakdown in small-area ultrathin gate oxides." IEEE Transactions on Electron Devices 49, no. 8 (2002): 1367–74. http://dx.doi.org/10.1109/ted.2002.801443.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Lundgren, P., M. O. Andersson, K. R. Farmer, and O. Engström. "Electrical instability of ultrathin thermal oxides on silicon." Microelectronic Engineering 28, no. 1-4 (1995): 67–70. http://dx.doi.org/10.1016/0167-9317(95)00017-3.

Full text

APA, Harvard, Vancouver, ISO, and other styles

33

Wu, E. Y., D. L. Harmon, and Liang-Kai Han. "Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides." IEEE Electron Device Letters 21, no. 7 (2000): 362–64. http://dx.doi.org/10.1109/55.847381.

Full text

APA, Harvard, Vancouver, ISO, and other styles

34

Chen, Ming-Jer, Ting-Kuo Kang, Chuan-Hsi Liu, Yih J. Chang, and Kuan-Yu Fu. "Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides." Applied Physics Letters 77, no. 4 (2000): 555–57. http://dx.doi.org/10.1063/1.127042.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Bruyère, S., F. Guyader, W. De Coster, et al. "Wet or dry ultrathin oxides: impact on gate oxide and device reliability." Microelectronics Reliability 40, no. 4-5 (2000): 691–95. http://dx.doi.org/10.1016/s0026-2714(99)00273-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Lin, M.-T., R. J. Jaccodine, and T. J. Delph. "Planar oxidation of strained silicon substrates." Journal of Materials Research 16, no. 3 (2001): 728–33. http://dx.doi.org/10.1557/jmr.2001.0112.

Full text

Abstract:

We report here on a series of experiments in which relatively low levels of in-plane bending strain were applied to oxidizing silicon substrates. These were found to result in significant decreases in oxide thickness in the ultrathin oxide regime. Both tensile and compressive bending resulted in roughly the same degree of thickness retardation, although compressive bending typically led to somewhat thinner oxides than did tensile bending. An examination of the experimental data indicate that the principal effect seems to occur in the very early stages of oxidation, with only minor effects on s

APA, Harvard, Vancouver, ISO, and other styles

37

von Bardeleben, Hans Jürgen, J. L. Cantin, I. Vickridge, et al. "Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC." Materials Science Forum 483-485 (May 2005): 277–80. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.277.

Full text

Abstract:

The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO2 interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatment at 1000°C is insufficient for an efficient reduction of the two dominant paramagnetic interface defects: PbC centers and carbon clusters. From the NRA and XPS analysis of bulk samples treated under the same conditions we attribute the weak effect to the low nitrogen concentration of only 1% at the interface.

APA, Harvard, Vancouver, ISO, and other styles

38

Gao, Xinlong, Wenhui Shi, Pengchao Ruan, et al. "Ultrathin carbon boosted sodium storage performance in aqueous electrolyte." Functional Materials Letters 13, no. 05 (2020): 2030002. http://dx.doi.org/10.1142/s1793604720300029.

Full text

Abstract:

The sodium-based aqueous energy storage devices possess the advantages of low cost, high safety and wide application. However, the low energy density of traditional carbon-based sodium storage materials limits their large-scale application. Besides, other sodium storage materials, such as transition metal oxides, polyanionic compounds and Prussian blue analogues (PBAs), cannot achieve high capacity and stable energy storage performance due to their poor conductivity and instability. Ultrathin carbon with unique characteristics, such as high electrical conductivity, excellent chemical stability

APA, Harvard, Vancouver, ISO, and other styles

39

Omar, Halo D. "Upright Pyramid Surface Textures for Light Trapping and MoOx Layer in Ultrathin Crystalline Silicon Solar Cells." ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 12, no. 1 (2024): 203–6. http://dx.doi.org/10.14500/aro.11586.

Full text

Abstract:

In this work, ray tracing is used to investigate the optical characteristics of various surface structures in ultrathin crystalline silicon (c-Si) for solar cells. Ultrathin c-Si with a thickness of 20 μm is used as the substrate. The light trapping includes front upright pyramids with a molybdenum oxides (MoOx) anti-reflection (AR) layer. Planar ultrathin c-Si (without a MoOx AR layer and upright pyramids) is used as a reference. The wafer ray tracer was developed by a photovoltaic (PV) lighthouse to model the MoOx AR layer to reduce the front surface reflectance and impacts of the AR layer o

APA, Harvard, Vancouver, ISO, and other styles

40

SUÑE, JORDI, DAVID JIMENEZ, and ENRIQUE MIRANDA. "BREAKDOWN MODES AND BREAKDOWN STATISTICS OF ULTRATHIN SiO2 GATE OXIDES." International Journal of High Speed Electronics and Systems 11, no. 03 (2001): 789–848. http://dx.doi.org/10.1142/s0129156401001003.

Full text

Abstract:

The dielectric breakdown of ultra-thin silicon dioxide films used as gate insulator in MOSFETs is one of the most important reliability issues in CMOS technology. In this paper, two main aspects of oxide breakdown are considered: the modeling of the breakdown statistics and the properties of the two main breakdown modes, namely Soft Breakdown and Hard Breakdown. The most invoked models for the breakdown statistics that relate defect generation and breakdown are reviewed. Particular attention is paid to the percolation models and to a recent cell-based analytic picture. The scaling of the break

APA, Harvard, Vancouver, ISO, and other styles

41

Macco, Bart. "(Invited) Atomic Layer Deposition of (Semi)Conductive Oxides for Photovoltaics and Mo(o)Re." ECS Meeting Abstracts MA2024-02, no. 30 (2024): 2218. https://doi.org/10.1149/ma2024-02302218mtgabs.

Full text

Abstract:

(Semi)conductive oxides are a peculiar class of materials that combine optical transparency and (tunable) electrical conductivity, and are typically composed of combinations of In, Zn, Sn or Ga. These materials play a profound role in solar cells, but are also more and mo(o)re considered in memory, logic, photonics and sensing. When they are highly (degenerately) doped, these materials can act as transparent conductive window layers (e.g. in solar cells), and are often referred to as Transparent Conductive Oxides (TCOs). Conversely, for lowly-doped (non-degenerate) semiconductive oxides, the F

APA, Harvard, Vancouver, ISO, and other styles

42

Istomin, A. V., and S. G. Kolyshev. "ELECTROSTATIC METHOD OF FORMING ULTRATHIN FIBERS OF REFRACTORY OXIDES." «Aviation Materials and Technologies», no. 2 (2019): 40–46. http://dx.doi.org/10.18577/2071-9140-2019-0-2-40-46.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Vereecke, Guy, Erika Röhr, R. J. Carter, Thierry Conard, H. De Witte, and Marc M. Heyns. "The Origins of Fluorine in Dry Ultrathin Silicon Oxides." Solid State Phenomena 76-77 (January 2001): 153–56. http://dx.doi.org/10.4028/www.scientific.net/ssp.76-77.153.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Arienzo, Maurizio, Leonello Dori, and Thomas N. Szabo. "Effect of post‐oxidation anneal on ultrathin SiO2gate oxides." Applied Physics Letters 49, no. 16 (1986): 1040–42. http://dx.doi.org/10.1063/1.97465.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Oellig, Eva M., E. G. Michel, M. C. Asensio, and R. Miranda. "Ultrathin gate oxides formed by catalytic oxidation of silicon." Applied Physics Letters 50, no. 23 (1987): 1660–62. http://dx.doi.org/10.1063/1.97760.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Liao, Wei-Jian, Yi-Lin Yang, Shun-Cheng Chuang, and Jenn-Gwo Hwu. "Growth-Then-Anodization Technique for Reliable Ultrathin Gate Oxides." Journal of The Electrochemical Society 151, no. 9 (2004): G549. http://dx.doi.org/10.1149/1.1783907.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Fair, Richard B. "Physical Models of Boron Diffusion in Ultrathin Gate Oxides." Journal of The Electrochemical Society 144, no. 2 (1997): 708–17. http://dx.doi.org/10.1149/1.1837473.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Thompson, W. Howard, Zain Yamani, Laila AbuHassan, Osman Gurdal, and Munir Nayfeh. "The effect of ultrathin oxides on luminescent silicon nanocrystallites." Applied Physics Letters 73, no. 6 (1998): 841–43. http://dx.doi.org/10.1063/1.122019.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Madsen, Jon M., Zhenjiang Cui, and Christos G. Takoudis. "Low temperature oxidation of SiGe in ozone: Ultrathin oxides." Journal of Applied Physics 87, no. 4 (2000): 2046–51. http://dx.doi.org/10.1063/1.372134.

Full text

APA, Harvard, Vancouver, ISO, and other styles

50

Mukhopadhyay, M., S. K. Ray, D. K. Nayak, and C. K. Maiti. "Ultrathin oxides using N2O on strained Si1−xGex layers." Applied Physics Letters 68, no. 9 (1996): 1262–64. http://dx.doi.org/10.1063/1.115946.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!