Academic literature on the topic 'Uncooled infrared detectors'
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Journal articles on the topic "Uncooled infrared detectors"
Deng, Fang Yi, Xin She Wu, and Yuan Fang Li. "In Modulating Ferroelectric Uncooled Infrared Focal Plane Detector." Applied Mechanics and Materials 455 (November 2013): 474–79. http://dx.doi.org/10.4028/www.scientific.net/amm.455.474.
Full textPiotrowski, J., and A. Rogalski. "Uncooled long wavelength infrared photon detectors." Infrared Physics & Technology 46, no. 1-2 (December 2004): 115–31. http://dx.doi.org/10.1016/j.infrared.2004.03.016.
Full textLijing Yu, 余黎静, 唐利斌 Libin Tang, 杨文运 Wenyun Yang, and 郝群 Qun Hao. "Research progress of uncooled infrared detectors(Invited)." Infrared and Laser Engineering 50, no. 1 (2021): 20211013. http://dx.doi.org/10.3788/irla.9_2021-1013.
Full textLijing Yu, 余黎静, 唐利斌 Libin Tang, 杨文运 Wenyun Yang, and 郝群 Qun Hao. "Research progress of uncooled infrared detectors(Invited)." Infrared and Laser Engineering 50, no. 1 (2021): 20211013. http://dx.doi.org/10.3788/irla20211013.
Full textLi, Ze, Yu Zhao, Weili Li, Yazhou Peng, Wenyue Zhao, Zhao Wang, Lei Shi, and Weidong Fei. "Graphene/Ba0.7Sr0.3TiO3 heterostructure for uncooled infrared detectors." Materials Letters 305 (December 2021): 130686. http://dx.doi.org/10.1016/j.matlet.2021.130686.
Full textFang, Hua Jun, Xing Ming Liu, and Li Tian Liu. "A Uncooled α-Si Infrared Detector Using Polyimide as Thermal Isolation Layer." Advanced Materials Research 60-61 (January 2009): 371–74. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.371.
Full textEminoglu, Selim, Deniz Sabuncuoglu Tezcan, M. Yusuf Tanrikulu, and Tayfun Akin. "Low-cost uncooled infrared detectors in CMOS process." Sensors and Actuators A: Physical 109, no. 1-2 (December 2003): 102–13. http://dx.doi.org/10.1016/j.sna.2003.08.013.
Full textJayaweera, P. V. V., S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan, and Z. R. Wasilewski. "Uncooled infrared detectors for 3–5μm and beyond." Applied Physics Letters 93, no. 2 (July 14, 2008): 021105. http://dx.doi.org/10.1063/1.2959060.
Full textHaggag, Walid, and Ezz Farouk. "OPTIMIZATION AND PERFORMANCE LIMITS OF UNCOOLED INFRARED DETECTORS." International Conference on Aerospace Sciences and Aviation Technology 12, ASAT CONFERENCE (May 1, 2007): 1–23. http://dx.doi.org/10.21608/asat.2007.24014.
Full textKatsumata, Takashi, Ryosuke Nishimura, Keisuke Yamaoka, Edson Gomes Camargo, Tomohiro Morishita, Koichiro Ueno, Seiichi Tokuo, Hiromasa Goto, and Naohiro Kuze. "Uncooled InGaSb photovoltaic infrared detectors for gas sensing." Journal of Crystal Growth 378 (September 2013): 611–13. http://dx.doi.org/10.1016/j.jcrysgro.2012.12.088.
Full textDissertations / Theses on the topic "Uncooled infrared detectors"
Piyankarage, Viraj Vishwakantha Jayaweera. "Uncooled Infrared Photon Detection Concepts and Devices." Digital Archive @ GSU, 2009. http://digitalarchive.gsu.edu/phy_astr_diss/30.
Full textPurkl, Fabian [Verfasser], and Gerald A. [Akademischer Betreuer] Urban. "Uncooled infrared detectors based on nanometer-thin metal films." Freiburg : Universität, 2019. http://d-nb.info/1204003351/34.
Full textEminoglu, Selim. "Uncooled Infrared Focal Plane Arrays With Integrated Readout Circuitry Using Mems And Standard Cmos Technologies." Phd thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/4/698597/index.pdf.
Full textm CMOS process followed by a simple post-CMOS bulk-micromachining process. The post-CMOS process does not require any critical lithography or complicated deposition steps
and therefore, the FPA cost is reduced considerably. The integrated readout circuitry is developed specially for the p+-active/n-well diode microbolometers that provides lower input referred noise voltage than the previously developed microbolometer readout circuits suitable for the diode type microbolometers. Two FPAs with 64 ×
64 and 128 ×
128 array formats have been implemented together with their low-noise integrated readout circuitry. These FPAs are first of their kinds where such large format uncooled infrared FPAs are designed and fabricated using a standard CMOS process. The fabricated detectors have a temperature coefficient of -2 mV/K, a thermal conductance value of 1.55 ×
10-7 W/K, and a thermal time constant value of 36 ms, providing a measured DC responsivity (&
#8476
) of 4970 V/W under continuous bias. The measured detector noise is 0.69 µ
V in 8 kHz bandwidth, resulting a measured detectivity (D*) of 9.7 ×
108 cm&
#8730
Hz/W. The 64 ×
64 FPA chip has 4096 pixels scanned by an integrated 16-channel parallel readout circuit composed of low-noise differential transconductance amplifiers, switched capacitor integrators, and sample-and-hold circuits. It measures 4.1 mm ×
5.4 mm, dissipates 25 mW power, and provides an estimated NETD value of 0.8 K at 30 frames/sec (fps) for an f/1 optics. The measured uncorrected voltage non-uniformity for the 64 ×
64 array after the CMOS fabrication is 0.8 %, which is reduced further down to 0.2 % for the 128 ×
128 array using an improved FPA structure that can compensate for the fixed pattern noise due to the FPA routing. The 128 ×
128 FPA chip has 16384 microbolometer pixels scanned by a 32-channel parallel readout circuitry. The 128 ×
128 FPA measures 6.6 mm ×
7.9 mm, includes a PTAT temperature sensor and a vacuum sensor, dissipates 25 mW power, and provides an estimated NETD value of 1 K at 30 fps for an f/1 optics. These NETD values can be decreased below 350 mK with further optimization of the readout circuit and post-CMOS etching steps. Hence, the proposed method is very cost-effective to fabricate large format focal plane arrays for very low-cost infrared imaging applications.
Kucuk, Seniz Esra. "Development Of High Fill Factor And High Performance Uncooled Infrared Detector Pixels." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613738/index.pdf.
Full textm, are designed and fabricated as two-level structures using the enhanced sandwich type resistor while the active material is selected as Yttrium Barium Copper Oxide (YBCO). First level of the pixel structure is allocated for the formation of the support arms in order to obtain longer support arms hence lower thermal conductance values to get the desired high performance levels. The pixel body is built in the second level such that the fill factor and absorption of the detector is maximized. Structural and sacrificial layer thicknesses are also optimized in order to increase the absorption coefficient of the pixel in the 8-12 &mu
m wavelength range. The thermal simulations are conducted using finite element method (FEM) by CoventorWare software. The designed pixel has a fill factor of 92 % together with the thermal conductance and thermal time constant values calculated as 16.8 nW/K and 19.3 ms in the simulations, respectively. The pixels are fabricated at METU MEMS facilities after the design of a CMOS compatible process flow. All process steps are optimized individually to obtain the expected high performance. Characterization step of the pixels includes the measurements of temperature coefficient of resistance (TCR), noise and thermal conductance value together with the thermal time constant. Effective TCR of the pixel is measured as -2.81 %/K for a pixel with a support arm resistance of 8 k&Omega
and total resistance of 55 k&Omega
. The corner frequency of 1/f noise in the pixel is 9.5 kHz and 1.4 kHz under 20 &mu
A and 10 &mu
A current bias, respectively. The total rms noise is 192 pA within 8.4 kHz bandwidth for a current bias of 20 &mu
A. Thermal conductance, Gth, of the pixel is measured as 17.4 nW/K with a time constant of 17.5 ms. The measurement results indicate that the single pixels designed and fabricated in the scope of this thesis are applicable to large format FPAs in order to obtain a high performance imager. The expected NETD values are 33 mK and 36 mK for 384x288 and 640x480 format FPAs, respectively.
Akcoren, Dincay. "A Low-cost Uncooled Infrared Detector Array And Its Camera Electronics." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613082/index.pdf.
Full textm process. The pixels in the FPA have 70 &mu
m pixel pitch, and they are sensitive in the 8&ndash
12 &mu
m band of the infrared spectrum. Each pixel has 4 serially connected diodes, and diode turn on voltage changes as the temperature of the suspended and thermally isolated pixel increases due to the absorbed infrared power. Suspension of the pixels is obtained with a post-CMOS MEMS etching process, but this process requires no critical litography and/or deposition steps. This dramatically reduces the detector process cost, which makes this microbolometer FPA suitable for ultra low-cost applications such as automobile, security, and commercial applications. The readout electronics of the FPA include digital blocks such as timing and programming blocks as well as analog blocks such as a differential trans-conductance amplifier, a switched capacitor integrator, a sampleand- hold, and current DACs. This new readout design has reduced number of pins to simplify the external electronics and allows wafer-level vacuum packaging compared to the 128x128 FPA developed in a previous study at METU with the same approach. Both of these features further decrease the cost. Two kinds of external camera electronics are developed for two SOI type microbolometers. The first one is for the 128x128 SOI microbolometer previously designed in METU. The developed external camera electronics have 1.5mVrms noise, which is much less than the microbolometer noise. The overall system has an average NETD of 465 mK and a peak NETD of 320mK. The second developed external camera electronics are for the 160x120 SOI microbolometers that developed in the scope of this thesis. The developed external camera electronics has 0.55mVrms noise which is much less than the bolometer noise which is 5mVrms. The overall system has an average NETD of 820 mK and a peak NETD of 350 mK. Each of these external camera electronics include a custom designed PCB, an FPGA board with appropiate configurion and a software working on a PC. The custom designed PCB holds the external components for the microbolometer, an FPGA takes and processes the bolometer data and it sends to a PC, and a PC processes these data and forms a streaming video. These two external camera electronics allow to obtain human images verifying that the developed microbolometers can be used for security and automotive applications.
Kebapci, Basak. "Development Of High Performance Uncooled Infrared Detector Materials." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613070/index.pdf.
Full textYildirim, Omer Ozgur. "High Performance Readout Electronics For Uncooled Infrared Detector Arrays." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/2/12607504/index.pdf.
Full textm CMOS process. Fabricated chips include a conventional capacitive transimpedance amplifier (CTIA) type readout circuit, a novel readout circuit with dynamic resistance nonuniformity compensation capability, and a new improved version of the CTIA circuit. The fabricated CTIA type readout circuit uses two digital-to-analog converters (DACs) with multiple analog buses which compensate the resistance nonuniformity by adjusting the bias currents of detector and reference resistors. Compensated detector current is integrated by a switched capacitor integrator with offset cancellation capability followed by a sample-and-hold circuit. The measured detector referred current noise is 47.2 pA in an electrical bandwidth of 2.6 KHz, corresponding to an expected SNR of 530. The dynamic nonuniformity compensation circuit uses a feedback structure that dynamically changes the bias currents of the reference and detector resistors. A special feature of the circuit is that it provides continuous compensation for the detector and reference resistances due to temperature changes over time. Test results of the fabricated circuit show that the circuit reduces the offset current due to resistance nonuniformity 42.5 times. However, the calculated detector referred current noise is 360 pA, which limits the circuit SNR to 70. The improved CTIA type readout circuit introduces a new detector biasing method by using an additional auxiliary biasing transistor for better current controllability. The improved readout circuit alleviates the need for high resolution compensation DACs, which drastically decreases the circuit area. The circuit occupies an area of one seventh of the first design. According to test results, the current compensation ratio is 170, and the detector referred current noise is 48.6 pA in a 2.6 KHz bandwidth.
Toprak, Alperen. "Cmos Readout Electronics For Microbolometer Type Infrared Detector Arrays." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/3/12610390/index.pdf.
Full textand a 384x288 resistive microbolometer FPA readout for 35 µ
m pixel pitch is designed and fabricated in a standard 0.6 µ
m CMOS process. A 4-layer PCB is also prepared in order to form an imaging system together with the FPA after detector fabrication. The low power output buffering architecture employs a new buffering scheme that reduces the capacitive load and hence, the power dissipation of the readout channels. Furthermore, a special type operational amplifier with digitally controllable output current capability is designed in order to use the power more efficiently. With the combination of these two methods, the power dissipation of the output buffering structure of a 384x288 microbolometer FPA with 35 µ
m pixel pitch operating at 50 fps with two output channels can be decreased to 8.96% of its initial value. The new bias correction DAC structure is designed to overcome the power dissipation and noise problems of the previous designs at METU. The structure is composed of two resistive ladder DAC stages, which are capable of providing multiple outputs. This feature of the resistive ladders reduces the overall area and power dissipation of the structure and enables the implementation of a dedicated DAC for each readout channel. As a result, the need for the sampling operation required in the previous designs is eliminated. Elimination of sampling prevents the concentration of the noise into the baseband, and therefore, allows most of the noise to be filtered out by integration. A 384x288 resistive microbolometer FPA readout with 35 &
#956
m pixel pitch is designed and fabricated in a standard 0.6 &
#956
m CMOS process. The fabricated chip occupies an area of 17.84 mm x 16.23 mm, and needs 32 pads for normal operation. The readout employs the low power output buffering architecture and the new bias correction DAC structure
therefore, it has significantly low power dissipation when compared to the previous designs at METU. A 4-layer imaging PCB is also designed for the FPA, and initial tests are performed with the same PCB. Results of the performed tests verify the proper operation of the readout. The rms output noise of the imaging system and the power dissipation of the readout when operating at a speed of 50 fps is measured as 1.76 mV and 236.9 mW, respectively.
Grbovic, Dragoslav. "Imaging by Detection of Infrared Photons Using Arrays of Uncooled Micromechanical Detectors." 2008. http://trace.tennessee.edu/utk_graddiss/404.
Full textTopaloglu, Nezih. "Analysis and Modeling of Uncooled Microbolometers with Tunable Thermal Conductance." Thesis, 2009. http://hdl.handle.net/10012/4429.
Full textBooks on the topic "Uncooled infrared detectors"
Micro and Nanophotonics for Semiconductor Infrared Detectors: Towards an Ultimate Uncooled Device. Springer, 2014.
Find full textJakšić, Zoran. Micro and Nanophotonics for Semiconductor Infrared Detectors: Towards an Ultimate Uncooled Device. Springer, 2016.
Find full textBook chapters on the topic "Uncooled infrared detectors"
Wood, R. A. "Uncooled Microbolometer Infrared Sensor Arrays." In Infrared Detectors and Emitters: Materials and Devices, 149–75. Boston, MA: Springer US, 2001. http://dx.doi.org/10.1007/978-1-4615-1607-1_6.
Full textBharadwaja, S. S. N., C. Venkatasubramanyam, N. Fieldhouse, B. Gauntt, Myung Yoon Lee, S. Ashok, E. C. Dickey, T. N. Jackson, and M. Horn. "Processing Issues in Pulse DC Sputtering of Vanadium Oxide Thin Films for Uncooled Infrared Detectors." In Ceramic Transactions Series, 177–85. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470930915.ch16.
Full textWeiler, Dirk, Marco Ruß, Daniel Würfel, Renee Lerch, Pin Yang, Jochen Bauer, Piotr Kropelnicki, Jennifer Heß, and Holger Vogt. "A Far Infrared VGA Detector Based on Uncooled Microbolometers for Automotive Applications." In Advanced Microsystems for Automotive Applications 2011, 327–34. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21381-6_31.
Full textNoda, Minoru, Kouji Inoue, Morio Ogura, Huaping Xu, Shuichi Murakami, Hiroyuki Kishihara, and Masanori Okuyama. "An Uncooled Infrared Sensor of Dielectric Bolometer Mode Using a New Detector Technique of Operation Bias Voltage." In Transducers ’01 Eurosensors XV, 564–67. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_134.
Full textJiao, Leizi, Yun Lang, Daming Dong, and Kun Zhang. "Research on developing a miniature temperature measurement system based on uncooled infrared detector." In Energy Science and Applied Technology, 503–8. CRC Press, 2015. http://dx.doi.org/10.1201/b19779-114.
Full textConference papers on the topic "Uncooled infrared detectors"
Piotrowski, Jozef, and Antoni Rogalski. "Uncooled long-wavelength infrared photon detectors." In Integrated Optoelectronic Devices 2004, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2004. http://dx.doi.org/10.1117/12.531402.
Full textRajic, Nik. "Uncooled detectors for high sensitivity synchronous thermography." In Quantitative InfraRed Thermography Asia 2017. QIRT Council, 2017. http://dx.doi.org/10.21611/qirt.2017.004.
Full textTidrow, Meimei Z., William W. Clark III, W. Tipton, R. Hoffman, William A. Beck, S. C. Tidrow, D. N. Robertson, et al. "Uncooled infrared detectors and focal plane arrays." In Photonics China '98, edited by Pingzhi Liang, Marc Wigdor, and William G. D. Frederick. SPIE, 1998. http://dx.doi.org/10.1117/12.318098.
Full textChen, Y. S., N. J. Wu, D. Liu, J. Fan, S. Dordevic, and A. Ignatiev. "Uncooled infrared detectors for space monitoring applications." In AIP Conference Proceedings Volume 387. ASCE, 1997. http://dx.doi.org/10.1063/1.52084.
Full textMansi, M. V., T. J. Liddicoat, and L. J. Richards. "Thermal Imaging With Uncooled Pyroelectric Infrared Detectors." In Hague International Symposium, edited by H. M. Lamberton. SPIE, 1987. http://dx.doi.org/10.1117/12.941436.
Full textOwen, Robert A., James F. Belcher, Howard R. Beratan, and Steve N. Frank. "Producibility advances in hybrid uncooled infrared detectors." In SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, edited by Eustace L. Dereniak and Robert E. Sampson. SPIE, 1994. http://dx.doi.org/10.1117/12.179686.
Full textDatskos, Panos G., Slobodan Rajic, Irene Datskou, and Charles M. Egert. "Infrared microcalorimetric spectroscopy using uncooled thermal detectors." In Optical Science, Engineering and Instrumentation '97, edited by Michael R. Descour and Sylvia S. Shen. SPIE, 1997. http://dx.doi.org/10.1117/12.283834.
Full textWei, Jingxuan, Cheng Xu, Bowei Dong, and Chengkuo Lee. "Uncooled Zero-Bias Graphene Mid-Infrared Detectors." In 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS). IEEE, 2021. http://dx.doi.org/10.1109/mems51782.2021.9375381.
Full textXu, Xiangdong, Zhuo Yang, Zhi Wang, Chao Chen, Dong Zhou, Yang Yang, and Yadong Jiang. "Advanced design of microbolometers for uncooled infrared detectors." In 2011 International Conference on Information Science and Technology (ICIST). IEEE, 2011. http://dx.doi.org/10.1109/icist.2011.5765352.
Full textUnewisse, Mark H., Stephen J. Passmore, Kevin C. Liddiard, and Rodney J. Watson. "Performance of uncooled semiconductor film bolometer infrared detectors." In SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, edited by Bjorn F. Andresen. SPIE, 1994. http://dx.doi.org/10.1117/12.188679.
Full textReports on the topic "Uncooled infrared detectors"
Wu, Judy. Material Issues in Uncooled Ferroelectric Infrared Detectors. Fort Belvoir, VA: Defense Technical Information Center, March 2003. http://dx.doi.org/10.21236/ada415178.
Full textDatskos, P. G., S. Rajic, I. Datskou, and C. M. Egert. Infrared microcalorimetric spectroscopy using uncooled thermal detectors. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/541859.
Full textSarney, Wendy L., Kimberley A. Olver, John W. Little, Frank E. Livingston, Krisztian Niesz, and Daniel E. Morse. Materials Research of Perovskite Thin Films for Uncooled Infrared (IR) Detectors. Fort Belvoir, VA: Defense Technical Information Center, July 2011. http://dx.doi.org/10.21236/ada548946.
Full textBlalock, T., and M. Reed. Uncooled Infrared Detector Arrays With Electrostatically Levitated Sensing Elements. Fort Belvoir, VA: Defense Technical Information Center, March 2005. http://dx.doi.org/10.21236/ada431988.
Full textSarney, Wendy L., Kimberley A. Olver, John W. Little, Frank E. Livingston, Krisztian Niesz, and Daniel E. Morse. Progress In Materials Synthesis And Processing Of Barium Titanium Oxide (BaTiO3) and Barium Strontium Titanium Oxide (BaTiSrO3) Films For Uncooled Infrared (IR) Detector Applications. Fort Belvoir, VA: Defense Technical Information Center, December 2011. http://dx.doi.org/10.21236/ada554856.
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