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1

Deng, Fang Yi, Xin She Wu, and Yuan Fang Li. "In Modulating Ferroelectric Uncooled Infrared Focal Plane Detector." Applied Mechanics and Materials 455 (November 2013): 474–79. http://dx.doi.org/10.4028/www.scientific.net/amm.455.474.

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Aiming at detecting rate and frame rate problems restricting the development of ferroelectric detector technology, puts forward a new design method of ferroelectric ferroelectric detectors -- detector modulation. Improvement principle and structure of the original ferroelectric detectors, and summarizes the technical features of this device.
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2

Piotrowski, J., and A. Rogalski. "Uncooled long wavelength infrared photon detectors." Infrared Physics & Technology 46, no. 1-2 (December 2004): 115–31. http://dx.doi.org/10.1016/j.infrared.2004.03.016.

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3

Lijing Yu, 余黎静, 唐利斌 Libin Tang, 杨文运 Wenyun Yang, and 郝群 Qun Hao. "Research progress of uncooled infrared detectors(Invited)." Infrared and Laser Engineering 50, no. 1 (2021): 20211013. http://dx.doi.org/10.3788/irla.9_2021-1013.

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Lijing Yu, 余黎静, 唐利斌 Libin Tang, 杨文运 Wenyun Yang, and 郝群 Qun Hao. "Research progress of uncooled infrared detectors(Invited)." Infrared and Laser Engineering 50, no. 1 (2021): 20211013. http://dx.doi.org/10.3788/irla20211013.

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5

Li, Ze, Yu Zhao, Weili Li, Yazhou Peng, Wenyue Zhao, Zhao Wang, Lei Shi, and Weidong Fei. "Graphene/Ba0.7Sr0.3TiO3 heterostructure for uncooled infrared detectors." Materials Letters 305 (December 2021): 130686. http://dx.doi.org/10.1016/j.matlet.2021.130686.

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6

Fang, Hua Jun, Xing Ming Liu, and Li Tian Liu. "A Uncooled α-Si Infrared Detector Using Polyimide as Thermal Isolation Layer." Advanced Materials Research 60-61 (January 2009): 371–74. http://dx.doi.org/10.4028/www.scientific.net/amr.60-61.371.

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a new structure of the uncooled amorphous silicon (α-Si) infrared detector has been fabricated and characterized. The structure with thermal isolation and infrared absorption based on polyimide (PI) and bottom metal reflective layer is put forward. The fabrication process of the IR detectors is described. The temperature coefficient of resistance (TCR) of α-Si resistance has been investigated. The measurements show that the TCR is up to -2.8%. The detectivity of 1.7×108 cmHz1/2W-1 is achieved with chopping frequency of 30Hz at a bias voltage of 5V. Measurement results indicate that the polyimide layer exhibits excellent thermal isolating characteristics and the unique sandwich IR absorption structure is beneficial to the enhancement of detectivity. Compared with other techniques, the IR detectors using PI as thermal isolation layer are not only with simpler process, lower cost and higher yield, but also suitable for the application of large-scale uncooled infrared focal plane arrays (IRFPA).
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7

Eminoglu, Selim, Deniz Sabuncuoglu Tezcan, M. Yusuf Tanrikulu, and Tayfun Akin. "Low-cost uncooled infrared detectors in CMOS process." Sensors and Actuators A: Physical 109, no. 1-2 (December 2003): 102–13. http://dx.doi.org/10.1016/j.sna.2003.08.013.

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8

Jayaweera, P. V. V., S. G. Matsik, A. G. U. Perera, H. C. Liu, M. Buchanan, and Z. R. Wasilewski. "Uncooled infrared detectors for 3–5μm and beyond." Applied Physics Letters 93, no. 2 (July 14, 2008): 021105. http://dx.doi.org/10.1063/1.2959060.

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9

Haggag, Walid, and Ezz Farouk. "OPTIMIZATION AND PERFORMANCE LIMITS OF UNCOOLED INFRARED DETECTORS." International Conference on Aerospace Sciences and Aviation Technology 12, ASAT CONFERENCE (May 1, 2007): 1–23. http://dx.doi.org/10.21608/asat.2007.24014.

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10

Katsumata, Takashi, Ryosuke Nishimura, Keisuke Yamaoka, Edson Gomes Camargo, Tomohiro Morishita, Koichiro Ueno, Seiichi Tokuo, Hiromasa Goto, and Naohiro Kuze. "Uncooled InGaSb photovoltaic infrared detectors for gas sensing." Journal of Crystal Growth 378 (September 2013): 611–13. http://dx.doi.org/10.1016/j.jcrysgro.2012.12.088.

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11

Madejczyk, P., W. Gawron, A. Kębłowski, K. Mlynarczyk, D. Stępień, P. Martyniuk, A. Rogalski, J. Rutkowski, and J. Piotrowski. "Higher Operating Temperature IR Detectors of the MOCVD Grown HgCdTe Heterostructures." Journal of Electronic Materials 49, no. 11 (August 24, 2020): 6908–17. http://dx.doi.org/10.1007/s11664-020-08369-3.

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Abstract This paper summarizes progress in metal organic chemical vapour deposition (MOCVD) technology achieved in recent years at the Institute of Applied Physics, Military University of Technology and VIGO System S.A. MOCVD with a wide range of composition and donor/acceptor doping and without post-growth annealing is a very convenient tool for the deposition of HgCdTe epilayers used for uncooled infrared detectors. Particular attention is focused on: surface morphology improvement, doping issues, diffusion processes during growth study, substrate issues, crystallographic orientation selection. In this respect, MOCVD technology improvement influencing IR detector parameters is shown. CdTe buffer layer deposition allows HgCdTe heterostructure growth on GaAs substrates. Theoretical modelling using APSYS platform supports designing and better understanding of the carrier transport mechanism in detector’s structures. Secondary ion mass spectrometry profiles allows to compare projected and obtained structures and revealed diffusion processes of the elements. A wide range of different types of infrared detectors operating at high operating temperature conditions has been constructed: photoresistors, non-equilibrium photodiodes, dual-band photodiodes, barrier and multiple detectors. The methodical research efforts contributed to the time constant reduction are important in many detector applications. Future challenges and prospects are also discussed.
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12

Gooch, Roland, and Thomas Schimert. "Low-Cost Wafer-Level Vacuum Packaging for MEMS." MRS Bulletin 28, no. 1 (January 2003): 55–59. http://dx.doi.org/10.1557/mrs2003.18.

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AbstractVacuum packaging of high-performance surface-micromachined uncooled microbolometer detectors and focal-plane arrays (FPAs) for infrared imaging and nonimaging applications, inertial MEMS (microelectromechanical systems) accelerometers and gyroscopes, and rf MEMS resonators is a key issue in the technology development path to low-cost, high-volume MEMS production. In this article, two approaches to vacuum packaging for MEMS will be discussed. The first is component-level vacuum packaging, a die-level approach that involves packaging individual die in a ceramic package using either a silicon or germanium lid. The second approach is wafer-level vacuum packaging, in which the vacuum-packaging process is carried out at the wafer level prior to dicing the wafer into individual die. We focus the discussion of MEMS vacuum packaging on surface-micromachined uncooled amorphous silicon infrared microbolometer detectors and FPAs for which both component-level and wafer-level vacuum packaging have found widespread application and system insertion. We first discuss the requirement for vacuum packaging of uncooled a-Si microbolometers and FPAs. Second, we discuss the details of the component-level and wafer-level vacuum-packaging approaches. Finally, we discuss the system insertion of wafer-level vacuum packaging into the Raytheon 2000AS uncooled infrared imaging camera product line that employs a wafer-level-packaged 160 × 120 pixel a-Si infrared FPA.
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13

Piotrowski, Adam, and Józef Piotrowski. "Uncooled Infrared Detectors in Poland, History and Recent Progress." Procedia Engineering 47 (2012): 1506–12. http://dx.doi.org/10.1016/j.proeng.2012.09.438.

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14

Zhang, Guangzu, Shenglin Jiang, Yike Zeng, Yangyang Zhang, Qingfeng Zhang, and Yan Yu. "High Pyroelectric Properties of Porous Ba0.67Sr0.33TiO3for Uncooled Infrared Detectors." Journal of the American Ceramic Society 92, no. 12 (December 2009): 3132–34. http://dx.doi.org/10.1111/j.1551-2916.2009.03355.x.

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15

Butler, Donald P., Zeynep Çelik-Butler, Agha Jahanzeb, John E. Gray, and Christine M. Travers. "Micromachined YBaCuO capacitor structures as uncooled pyroelectric infrared detectors." Journal of Applied Physics 84, no. 3 (August 1998): 1680–87. http://dx.doi.org/10.1063/1.368257.

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16

Oloomi, Hossein M., Mohammad S. Alam, and Mukti M. Rana. "Noise Performance Evaluation of Uncooled Infrared Detectors (June 2009)." IEEE Sensors Journal 11, no. 4 (April 2011): 971–87. http://dx.doi.org/10.1109/jsen.2010.2069559.

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17

Fuflyigin, V., E. Salley, P. Vakhutinsky, A. Osinsky, J. Zhao, I. Gergis, and K. Whiteaker. "Free-standing films of PbSc0.5Ta0.5O3 for uncooled infrared detectors." Applied Physics Letters 78, no. 3 (January 15, 2001): 365–67. http://dx.doi.org/10.1063/1.1339257.

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18

Becla, P. "Uncooled 10.6 μm mercury manganese telluride photoelectromagnetic infrared detectors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 3 (May 1991): 1777. http://dx.doi.org/10.1116/1.585415.

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19

Edwards, Matthew E., Ashok K. Batra, Ashwith K. Chilvery, Padmaja Guggilla, Michael Curley, and Mohan D. Aggarwal. "Pyroelectric Properties of PVDF:MWCNT Nanocomposite Film for Uncooled Infrared Detectors." Materials Sciences and Applications 03, no. 12 (2012): 851–55. http://dx.doi.org/10.4236/msa.2012.312124.

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20

Gokhale, Vikrant J., and Mina Rais-Zadeh. "Uncooled Infrared Detectors Using Gallium Nitride on Silicon Micromechanical Resonators." Journal of Microelectromechanical Systems 23, no. 4 (August 2014): 803–10. http://dx.doi.org/10.1109/jmems.2013.2292368.

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21

Shu-wei, Li, Jin Yi-xin, Zhang Bao-lin, Zhou Tian-ming, Jiang Hong, and Ning Yong-qiang. "Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition." Acta Physica Sinica (Overseas Edition) 6, no. 6 (June 1997): 401–5. http://dx.doi.org/10.1088/1004-423x/6/6/001.

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22

Klipstein, Philip, Udi Mizrahi, Avraham Fraenkel, and Itay Shtrichman. "Status of Cooled and Uncooled Infrared Detectors at SCD, Israel." Defence Science Journal 63, no. 6 (December 18, 2013): 555–70. http://dx.doi.org/10.14429/dsj.63.5755.

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23

Crowder, J. G., C. T. Elliott, and H. R. Hardaway. "High performance, large area, uncooled detectors for mid-infrared wavelengths." Electronics Letters 37, no. 2 (2001): 116. http://dx.doi.org/10.1049/el:20010072.

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24

Kumar, R. T. Rajendra, B. Karunagaran, D. Mangalaraj, Sa K. Narayandass, P. Manoravi, M. Joseph, Vishnu Gopal, R. K. Madaria, and J. P. Singh. "Room temperature deposited vanadium oxide thin films for uncooled infrared detectors." Materials Research Bulletin 38, no. 7 (June 2003): 1235–40. http://dx.doi.org/10.1016/s0025-5408(03)00118-1.

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25

Rajendra Kumar, R. T., B. Karunagaran, D. Mangalaraj, Sa K. Narayandass, P. Manoravi, M. Joseph, and Vishnu Gopal. "Pulsed laser deposited vanadium oxide thin films for uncooled infrared detectors." Sensors and Actuators A: Physical 107, no. 1 (October 2003): 62–67. http://dx.doi.org/10.1016/s0924-4247(03)00233-4.

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26

Grbovic, D., N. V. Lavrik, S. Rajic, and P. G. Datskos. "Arrays of SiO2 substrate-free micromechanical uncooled infrared and terahertz detectors." Journal of Applied Physics 104, no. 5 (September 2008): 054508. http://dx.doi.org/10.1063/1.2959574.

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27

Jeong, Jae-Woon, Sung-Gap Lee, Seo-Hyeon Jo, and Myung-Soo Han. "Electrical Properties of Semiconducting YBa2Cu3O7-xThin Film for Uncooled Infrared Detectors." Integrated Ferroelectrics 142, no. 1 (January 2013): 52–60. http://dx.doi.org/10.1080/10584587.2013.780152.

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28

Mehta, V. R., S. Shet, N. M. Ravindra, A. T. Fiory, and M. P. Lepselter. "Silicon-integrated uncooled infrared detectors: Perspectives on thin films and microstructures." Journal of Electronic Materials 34, no. 5 (May 2005): 484–90. http://dx.doi.org/10.1007/s11664-005-0055-z.

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29

Wang, Jiang, Wei Ping Jing, and Yan Jin Li. "Design of Readout Circuit for Pyroelectric Detector Based on Novel Pyroelectric Materials." Advanced Materials Research 361-363 (October 2011): 1918–21. http://dx.doi.org/10.4028/www.scientific.net/amr.361-363.1918.

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Recently, scientists discovered that relaxor-based ferroelectric single crystals, such as (1-x)Pb(Mg1/3Nb2/3)O3 -xPbTiO3 (PMN-xPT, or PMNT) single crystals, exhibit extra-high pyroelectric responses. They are promising candidates for optical power detectors in broad bandwidth at ultraviolet, visible and infrared wavelength.To fabricate high performance infrared detectors with relaxor-based single crystals, the related readout circuit was investigated to increase signal-to-noise ratio, and 8×1 CMOS readout circuit is fabricated to gain very weak current, which provides a solution for uncooled large focal plane arrays devices based on relaxor-based single crystals.
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30

Ahmed, Amr, Hye Kim, Jinsik Kim, Kyo Hwang, and Seonghwan Kim. "Enhancing the Responsivity of Uncooled Infrared Detectors Using Plasmonics for High-Performance Infrared Spectroscopy." Sensors 17, no. 4 (April 20, 2017): 908. http://dx.doi.org/10.3390/s17040908.

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31

Palchetti, L., G. Bianchini, B. Carli, U. Cortesi, and S. Del Bianco. "Measurement of the water vapour vertical profile and of the Earth's outgoing far infrared flux." Atmospheric Chemistry and Physics 8, no. 11 (June 6, 2008): 2885–94. http://dx.doi.org/10.5194/acp-8-2885-2008.

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Abstract. Our understanding of global warming depends on the accuracy with which the atmospheric components that modulate the Earth's radiation budget are known. Many uncertainties still exist as regards the radiative effect of water in the different spectral regions, among which is the far infrared, where very few observations have been made. An assessment is shown of the atmospheric outgoing flux obtained from a balloon-borne platform with wideband spectrally-resolved nadir measurements at the top of the atmosphere over the full spectral range, from 100 to 1400 cm−1, made by a Fourier transform spectrometer with uncooled detectors. From these measurements, we retrieved 15 pieces of information regarding water vapour and temperature profiles and surface temperature, with a major improvement in our knowledge of water vapour in the upper troposphere. The retrieved atmospheric state made it possible to calculate the emitted radiance also at frequencies and zenith angles that have not been observed and to determine the outgoing spectral radiation flux. This proves that spectrally resolved observations can be used to derive accurate information on the integrated flux. While the retrieved temperature was in agreement with ECMWF analysis, the retrieved water vapour profile differed significantly; depending on the time and the location, the derived flux in the far infrared (20–600 cm−1) differed by 2–3.5 W/m2 from that calculated using ECMWF. The error with which the far infrared flux is determined by REFIR-PAD is about 0.4 W/m2 and is caused mainly by calibration uncertainties, while detector noise has a negligible effect. This proves that uncooled detectors are adequate for top-of-the-atmosphere radiometry.
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32

Tohyama, Shigeru, Tokuhito Sasaki, Tsutomu Endoh, Masahiko Sano, Koji Kato, Seiji Kurashina, Masaru Miyoshi, et al. "Uncooled infrared detectors toward smaller pixel pitch with newly proposed pixel structure." Optical Engineering 52, no. 12 (December 18, 2013): 123105. http://dx.doi.org/10.1117/1.oe.52.12.123105.

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33

Reddy, Y. Ashok Kumar, In-Ku Kang, Young Bong Shin, and Hee Chul Lee. "Improvement of the thermal stability of Nb:TiO2−xsamples for uncooled infrared detectors." Journal of Physics D: Applied Physics 51, no. 2 (December 13, 2017): 025104. http://dx.doi.org/10.1088/1361-6463/aa9b60.

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34

Palchetti, L., G. Bianchini, B. Carli, U. Cortesi, and S. Del Bianco. "Measurement of the water vapour vertical profile and of the Earth's outgoing far infrared flux." Atmospheric Chemistry and Physics Discussions 7, no. 6 (December 10, 2007): 17741–67. http://dx.doi.org/10.5194/acpd-7-17741-2007.

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Abstract. Our understanding of global warming depends on the accuracy with which the atmospheric components that modulate the Earth's radiation budget are known. Many uncertainties still exist on the radiative effect of water in the different spectral regions, among which the far infrared where few observations have been made. An assessment is shown of the atmospheric outgoing flux obtained from a balloon-borne platform with wideband spectrally resolved nadir measurements at the top-of-atmosphere over the full spectral range, including the far infrared, from 100 to 1400 cm−1, made by a Fourier transform spectrometer with uncooled detectors. From these measurements, we retrieve 15 pieces of information about water vapour and temperature profiles, and surface temperature, with a precision of 5% for the mean water vapour profile and a major improvement of the upper troposphere-lower stratosphere knowledge. The retrieved atmospheric state makes it possible to calculate the emitted radiance as a function of the zenith angle and to determine the outgoing radiation flux, proving that spectrally resolved observations can be used to derive accurate information on the integrated flux. While the retrieved temperature is in good agreement with ECMWF analysis, the retrieved water vapour profile differs significantly, and, depending on time and location, the derived flux differs in the far infrared (0–600 cm−1) from that derived from ECMWF by 2–3.5 W/m2±0.4 W/m2. The observed discrepancy is larger than current estimates of radiative forcing due to CO2 increases since pre-industrial time. The error with which the flux is determined is caused mainly by calibration uncertainties while detector noise has a negligible effect, proving that uncooled detectors are adequate for top of the atmosphere radiometry.
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35

Ivanov, S. D., and E. G. Kostsov. "Thermal detectors of uncooled multi-element infrared imaging arrays. I. Thermally insulated elements." Optoelectronics, Instrumentation and Data Processing 51, no. 6 (November 2015): 601–8. http://dx.doi.org/10.3103/s8756699015060126.

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36

Rajic, Nik, and Neil Street. "A performance comparison between cooled and uncooled infrared detectors for thermoelastic stress analysis." Quantitative InfraRed Thermography Journal 11, no. 2 (July 3, 2014): 207–21. http://dx.doi.org/10.1080/17686733.2014.962835.

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37

Lim, Sung-Soo, Myung-Soo Han, Suk-Ryong Hahn, and Sung-Gap Lee. "Dielectric and Pyroelectric Properties of (Ba,Sr,Ca)TiO3Ceramics for Uncooled Infrared Detectors." Japanese Journal of Applied Physics 39, Part 1, No. 8 (August 15, 2000): 4835–38. http://dx.doi.org/10.1143/jjap.39.4835.

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38

Batra, A. K., M. E. Edwards, P. Guggilla, M. D. Aggarwal, and R. B. Lal. "Pyroelectric Properties of PVDF:MWCNT Nanocomposite Film for Uncooled Infrared Detectors and Medical Applications." Integrated Ferroelectrics 158, no. 1 (November 22, 2014): 98–107. http://dx.doi.org/10.1080/10584587.2014.957559.

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39

Kim, Hyun Su, Young Chul Park, Seung Hwan Oh, Se Hun Kim, Young Jik Jo, and Jung Ho Kang. "A study on MicroCantilever Deflection for the Infrared Image Sensor using Bimetal Structure." Key Engineering Materials 345-346 (August 2007): 785–88. http://dx.doi.org/10.4028/www.scientific.net/kem.345-346.785.

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This is a widespread requirement for low cost lightweight thermal imaging sensors for both military and civilian applications. The feasibility of micromechanical optical and infrared (IR) detection using microcantilevers is demonstrated. Microcantilevers provide a simple Structurefor developing single- and multi-element sensors for visible and infrared radiation that are smaller, more sensitive and lower in cost than quantum or thermal detectors. Microcantilevers coated with a heat absorbing layer undergo bending due to the differential stress originating from the bimetallic effect. This paper reports a micromachined silicon uncooled thermal imager intended for applications in automated process control.
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40

Gawron, Waldemar, Jan Sobieski, Tetiana Manyk, Małgorzata Kopytko, Paweł Madejczyk, and Jarosław Rutkowski. "MOCVD Grown HgCdTe Heterostructures for Medium Wave Infrared Detectors." Coatings 11, no. 5 (May 20, 2021): 611. http://dx.doi.org/10.3390/coatings11050611.

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This paper presents the current status of medium-wave infrared (MWIR) detectors at the Military University of Technology’s Institute of Applied Physics and VIGO System S.A. The metal–organic chemical vapor deposition (MOCVD) technique is a very convenient tool for the deposition of HgCdTe epilayers, with a wide range of compositions, used for uncooled infrared detectors. Good compositional and thickness uniformity was achieved on epilayers grown on 2-in-diameter, low-cost (100) GaAs wafers. Most growth was performed on substrates, which were misoriented from (100) by between 2° and 4° in order to minimize growth defects. The large lattice mismatch between GaAs and HgCdTe required the usage of a CdTe buffer layer. The CdTe (111) B buffer layer growth was enforced by suitable nucleation procedure, based on (100) GaAs substrate annealing in a Te-rich atmosphere prior to the buffer deposition. Secondary-ion mass spectrometry (SIMS) showed that ethyl iodide (EI) and tris(dimethylamino)arsenic (TDMAAs) were stable donor and acceptor dopants, respectively. Fully doped (111) HgCdTe heterostructures were grown in order to investigate the devices’ performance in the 3–5 µm infrared band. The uniqueness of the presented technology manifests in a lack of the necessity of time-consuming and troublesome ex situ annealing.
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41

Göktaş, Hasan. "Towards an Ultra-Sensitive Temperature Sensor for Uncooled Infrared Sensing in CMOS–MEMS Technology." Micromachines 10, no. 2 (February 6, 2019): 108. http://dx.doi.org/10.3390/mi10020108.

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Microbolometers and photon detectors are two main technologies to address the needs in Infrared Sensing applications. While the microbolometers in both complementary metal-oxide semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS) technology offer many advantages over photon detectors, they still suffer from nonlinearity and relatively low temperature sensitivity. This paper not only offers a reliable solution to solve the nonlinearity problem but also demonstrate a noticeable potential to build ultra-sensitive CMOS–MEMS temperature sensor for infrared (IR) sensing applications. The possibility of a 31× improvement in the total absolute frequency shift with respect to ambient temperature change is verified via both COMSOL (multiphysics solver) and theory. Nonlinearity problem is resolved by an operating temperature sensor around the beam bending point. The effect of both pull-in force and dimensional change is analyzed in depth, and a drastic increase in performance is achieved when the applied pull-in force between adjacent beams is kept as small as possible. The optimum structure is derived with a length of 57 µm and a thickness of 1 µm while avoiding critical temperature and, consequently, device failure. Moreover, a good match between theory and COMSOL is demonstrated, and this can be used as a guidance to build state-of-the-art designs.
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42

Ivanov, S. D., and E. G. Kostsov. "Thermal detectors of uncooled multi-element infrared imaging Arrays. II. New thermally uninsulated elements." Optoelectronics, Instrumentation and Data Processing 52, no. 1 (January 2016): 86–95. http://dx.doi.org/10.3103/s8756699016010131.

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43

Rana, Mukti M., and Donald P. Butler. "Radio Frequency sputtered Si1−xGex and Si1−xGexOy thin films for uncooled infrared detectors." Thin Solid Films 514, no. 1-2 (August 2006): 355–60. http://dx.doi.org/10.1016/j.tsf.2006.02.088.

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44

He, Zewei, Yanpeng Cao, Yafei Dong, Jiangxin Yang, Yanlong Cao, and Christel-Löic Tisse. "Single-image-based nonuniformity correction of uncooled long-wave infrared detectors: a deep-learning approach." Applied Optics 57, no. 18 (May 4, 2018): D155. http://dx.doi.org/10.1364/ao.57.00d155.

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45

Gawarikar, Anand S., Ryan P. Shea, and Joseph J. Talghader. "High Detectivity Uncooled Thermal Detectors With Resonant Cavity Coupled Absorption in the Long-Wave Infrared." IEEE Transactions on Electron Devices 60, no. 8 (August 2013): 2586–91. http://dx.doi.org/10.1109/ted.2013.2270295.

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46

Li, Xin, Ji Liang, Hongxiang Zhang, Xing Yang, Hao Zhang, Wei Pang, and Menglun Zhang. "Resonant and resistive dual-mode uncooled infrared detectors toward expanded dynamic range and high linearity." Applied Physics Letters 110, no. 26 (June 26, 2017): 263502. http://dx.doi.org/10.1063/1.4990285.

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47

Qiu, Jijun, Binbin Weng, Zijian Yuan, and Zhisheng Shi. "Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity." Journal of Applied Physics 113, no. 10 (March 14, 2013): 103102. http://dx.doi.org/10.1063/1.4794492.

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48

Aragon, Bruno, Kasper Johansen, Stephen Parkes, Yoann Malbeteau, Samir Al-Mashharawi, Talal Al-Amoudi, Cristhian F. Andrade, Darren Turner, Arko Lucieer, and Matthew F. McCabe. "A Calibration Procedure for Field and UAV-Based Uncooled Thermal Infrared Instruments." Sensors 20, no. 11 (June 10, 2020): 3316. http://dx.doi.org/10.3390/s20113316.

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Abstract:
Thermal infrared cameras provide unique information on surface temperature that can benefit a range of environmental, industrial and agricultural applications. However, the use of uncooled thermal cameras for field and unmanned aerial vehicle (UAV) based data collection is often hampered by vignette effects, sensor drift, ambient temperature influences and measurement bias. Here, we develop and apply an ambient temperature-dependent radiometric calibration function that is evaluated against three thermal infrared sensors (Apogee SI-11(Apogee Electronics, Santa Monica, CA, USA), FLIR A655sc (FLIR Systems, Wilsonville, OR, USA), TeAx 640 (TeAx Technology, Wilnsdorf, Germany)). Upon calibration, all systems demonstrated significant improvement in measured surface temperatures when compared against a temperature modulated black body target. The laboratory calibration process used a series of calibrated resistance temperature detectors to measure the temperature of a black body at different ambient temperatures to derive calibration equations for the thermal data acquired by the three sensors. As a point-collecting device, the Apogee sensor was corrected for sensor bias and ambient temperature influences. For the 2D thermal cameras, each pixel was calibrated independently, with results showing that measurement bias and vignette effects were greatly reduced for the FLIR A655sc (from a root mean squared error (RMSE) of 6.219 to 0.815 degrees Celsius (℃)) and TeAx 640 (from an RMSE of 3.438 to 1.013 ℃) cameras. This relatively straightforward approach for the radiometric calibration of infrared thermal sensors can enable more accurate surface temperature retrievals to support field and UAV-based data collection efforts.
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49

Kwon, JinBeom, SaeWan Kim, JaeSung Lee, CheolEon Park, OkSik Kim, Binrui Xu, JinHyuk Bae, and ShinWon Kang. "Uncooled Short-Wave Infrared Sensor Based on PbS Quantum Dots Using ZnO NPs." Nanomaterials 9, no. 7 (June 27, 2019): 926. http://dx.doi.org/10.3390/nano9070926.

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Shortwave infrared (SWIR) sensors have attracted interest due to their usefulness in applications like military and medical equipment. SWIR sensors based on various materials are currently being studied. However, most SWIR detectors need additional optical filters and cooling systems to detect specific wavelengths. In order to overcome these limitations, we proposed a solution processed SWIR sensor that can operate at room temperature using lead chloride (PbS) QDs as a photoactive layer. Additionally, we adapted zinc oxide (ZnO) nanoparticles (NPs) as an electron transport layer (ETL) to improve the sensitivity of a PbS SWIR sensor. In this study, PbS SWIR sensors with and without a ZnO NPs layer were fabricated and their current–voltage (I–V) characteristics were measured. The on/off ratio of the PbS SWIR sensor with ZnO NPs was 2.87 times higher than that of the PbS SWIR sensor without ZnO NPs at the maximum current difference. The PbS SWIR sensor with ZnO NPs showed more stable current characteristics than that without ZnO NPs because of the ZnO NPs’ high electron mobility and proper lowest unoccupied molecular orbital (LUMO) level.
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50

Simoens, François, and Jérôme Meilhan. "Terahertz real-time imaging uncooled array based on antenna- and cavity-coupled bolometers." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130111. http://dx.doi.org/10.1098/rsta.2013.0111.

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The development of terahertz (THz) applications is slowed down by the availability of affordable, easy-to-use and highly sensitive detectors. CEA-Leti took up this challenge by tailoring the mature infrared (IR) bolometer technology for optimized THz sensing. The key feature of these detectors relies on the separation between electromagnetic absorption and the thermometer. For each pixel, specific structures of antennas and a resonant quarter-wavelength cavity couple efficiently the THz radiation on a broadband range, while a central silicon microbridge bolometer resistance is read out by a complementary metal oxide semiconductor circuit. 320×240 pixel arrays have been designed and manufactured: a better than 30 pW power direct detection threshold per pixel has been demonstrated in the 2–4 THz range. Such performance is expected on the whole THz range by proper tailoring of the antennas while keeping the technological stack largely unchanged. This paper gives an overview of the developed bolometer-based technology. First, it describes the technology and reports the latest performance characterizations. Then imaging demonstrations are presented, such as real-time reflectance imaging of a large surface of hidden objects and THz time-domain spectroscopy beam two-dimensional profiling. Finally, perspectives of camera integration for scientific and industrial applications are discussed.
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