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Journal articles on the topic 'Uncooled laser'

Author: Grafiati

Published: 20 February 2023

Last updated: 31 July 2025

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1

Huang, Jack Jia-Sheng, ShinYi Shen, C. K. Wang, Feng Tsai, H. L. Chen, and Chung Shyu. "High-Reliability Uncooled InGaAlAs Lasers with Unpumped Current Blocking Regions Near Cavity Facets." European Journal of Theoretical and Applied Sciences 2, no. 3 (2024): 706–11. http://dx.doi.org/10.59324/ejtas.2024.2(3).54.

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The facet heating of high-power laser diodes significantly influences device reliability. To mitigate facet temperature, current blocking (CB) regions are employed at both cavity facets of the laser. In this paper, we investigate the device characteristics of uncooled InGaAlAs lasers with CB facets. We observe two types of light versus current (LI) curves and propose corresponding physical models. Our findings demonstrate the high reliability performance of uncooled lasers with proper engineering design and CB process.

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2

Jack, Jia-Sheng Huang, Shen ShinYi, Wang C.K., Tsai Feng, Chen H.L., and Shyu Chung. "High-Reliability Uncooled InGaAlAs Lasers with Unpumped Current Blocking Regions Near Cavity Facets." European Journal of Theoretical and Applied Sciences 2, no. 3 (2024): 706–11. https://doi.org/10.59324/ejtas.2024.2(3).54.

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The facet heating of high-power laser diodes significantly influences device reliability. To mitigate facet temperature, current blocking (CB) regions are employed at both cavity facets of the laser. In this paper, we investigate the device characteristics of uncooled InGaAlAs lasers with CB facets. We observe two types of light versus current (LI) curves and propose corresponding physical models. Our findings demonstrate the high reliability performance of uncooled lasers with proper engineering design and CB process. 

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3

Granovskii, A. B., and V. A. Yakovlev. "Uncooled receivers for CO2 laser radiation." Journal of Soviet Laser Research 7, no. 1 (1986): 1–10. http://dx.doi.org/10.1007/bf01120221.

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4

Makino, Shigeki, Kazunori Shinoda, Takeshi Kitatani, et al. "Uncooled Electro-Absorption Modulator Integrated Semiconductor Laser." Review of Laser Engineering 36, Supplement (2008): 188–89. http://dx.doi.org/10.2184/lsj.36.188.

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5

Ab-Rahman, Mohammad Syuhaimi, Mazen Radhe Hassan, and Khaled Mohamed Shaktur. "Pulse Input Response of Uncooled Laser Diodes." Advanced Science Letters 13, no. 1 (2012): 606–10. http://dx.doi.org/10.1166/asl.2012.3769.

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6

Huang, Jack Jia-Sheng, S. C. Huang, NiYeh Wu, et al. "High-reliability, High-performance 25 Gb/s Directly Modulated Uncooled Lasers for 5G Wireless Communications." Applied Science and Innovative Research 5, no. 1 (2021): p56. http://dx.doi.org/10.22158/asir.v5n1p56.

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Semiconductor laser diodes are important components for fifth-generation wireless technologies. To meet 5G wireless specifications, ever increasing performance and reliability requirements of each component become necessary to guarantee uptime air service. In this paper, we present highly reliable 25G DFB uncooled lasers that exhibit low threshold current, high single-mode, high bandwidth, and excellent eye pattern for uncooled operations of -40 to 85°C. Ultra-high component reliability is demonstrated to ensure stable operations for 5G mobile communications.

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7

Andreev, V. I., A. B. Granovskiĭ, and V. A. Yakovlev. "Fast-response uncooled detector of pulsed laser radiation." Soviet Journal of Quantum Electronics 15, no. 6 (1985): 857–58. http://dx.doi.org/10.1070/qe1985v015n06abeh007173.

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8

Oh, Su Hwan, Ki Soo Kim, Jung Jin Ju, et al. "Tunable external cavity laser employing uncooled superluminescent diode." Optics Express 17, no. 12 (2009): 10189. http://dx.doi.org/10.1364/oe.17.010189.

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9

Жуков, А. Е., Э. И. Моисеев, А. М. Надточий та ін. "Энергопотребление при высокочастотной модуляции неохлаждаемого InGaAs/GaAs/AlGaAs-микродискового лазера". Письма в журнал технической физики 47, № 13 (2021): 28. http://dx.doi.org/10.21883/pjtf.2021.13.51118.18707.

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The energy consumption of a microdisk laser with InGaAs/GaAs quantum well-dots operating uncooled under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal.

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10

Leonov, E., A. Chernykh, and Yu Shanin. "Heat transfer in laser passive and deformable mirrors." Journal of Physics: Conference Series 2088, no. 1 (2021): 012042. http://dx.doi.org/10.1088/1742-6596/2088/1/012042.

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Abstract In work, the possibilities of using uncooled and cooled optical elements (including laser passive and deformable mirrors) with an increase in the power of laser facilities are analyzed. To increase the permissible light loads acting on the optical elements, the use of highly efficient cooling systems with minichannels (coplanar and multi-tiered), providing a high compactness of the heat exchange surface and the intensification of heat transfer, is considered. The advantages and efficiency of the proposed cooling systems for reducing the displacement of the optical surface of the mirro

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11

HAN, JAE-HO, ZAIL LHEE, and SUNG-WOONG PARK. "EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE." International Journal of Modern Physics B 23, no. 32 (2009): 5859–65. http://dx.doi.org/10.1142/s0217979209054764.

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We have fabricated and characterized the uncooled light emitting device having a pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively strained quantum well layers on the semiconductor diode laser characteristics was experimentally demonstrated, depending on room and high temperatures. In addition to the automatically embedded absorptive grating which can reduce the epitaxial growth step, the laser performance can be optimized for both threshold current and differential slope efficiency when the quantum well numbers are reduced to five layers for optical com

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12

Li, Jin, A. Hohl-AbiChedid, A. K. Rice, and Yi Qian. "High-power singlemode AlGaInAs∕InP l4xx-nm laser for uncooled application." Electronics Letters 39, no. 3 (2003): 289. http://dx.doi.org/10.1049/el:20030203.

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13

Ab-Rahman, M. S., and M. R. Hassan. "Theory of cutoff temperature of operation of uncooled semiconductor laser diode." European Physical Journal Applied Physics 50, no. 2 (2010): 20301. http://dx.doi.org/10.1051/epjap/2010034.

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14

Vinevich, B. S., V. M. Zharikov, and A. G. Safronov. "Cooled and uncooled single-channel deformable mirrors for industrial laser systems." Quantum Electronics 28, no. 4 (1998): 366–69. http://dx.doi.org/10.1070/qe1998v028n04abeh001223.

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15

Rajendra Kumar, R. T., B. Karunagaran, D. Mangalaraj, et al. "Pulsed laser deposited vanadium oxide thin films for uncooled infrared detectors." Sensors and Actuators A: Physical 107, no. 1 (2003): 62–67. http://dx.doi.org/10.1016/s0924-4247(03)00233-4.

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16

Zhang, J. C., F. Q. Liu, S. Tan, et al. "High-performance uncooled distributed-feedback quantum cascade laser without lateral regrowth." Applied Physics Letters 100, no. 11 (2012): 112105. http://dx.doi.org/10.1063/1.3693425.

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17

Sunongbua, Pattarapong, Suwan Aekram, and Weerasak Lertsiriyothin. "Design of MIR Dispersive Spectrograph System with Uncooled Microbolometer." Sensors 23, no. 4 (2023): 2205. http://dx.doi.org/10.3390/s23042205.

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To make the mid-infrared (MIR) dispersive spectrograph a practical tool in industrial food processing lines, we designed a dispersive spectrograph system with an uncooled microbolometer focal plane array (FPA) detector for MIR spectral acquisition. To precisely regulate the angle of a rotatable grating to acquire the MIR spectrum, the spectral resolution and spatial resolution of the system were rigorously controlled to improve system performance. In the reflectance operation mode of the MIR dispersive spectrograph, the uncooled microbolometer FPA detector offered a maximum spectral resolution

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18

Carter, J. Chance, Phillip H. Paul, Joshua M. Ottaway, Peter Haugen, and Anastacia M. Manuel. "Standoff Detection of Oil and Powder Mixtures at 12 Meters Using a Tunable Quantum Cascade Laser-Based System with a Close Focus Telescope and Uncooled Infrared Detector." Applied Spectroscopy 76, no. 1 (2021): 19–27. http://dx.doi.org/10.1177/00037028211060389.

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We have designed and demonstrated a quantum cascade laser (QCL) based standoff system that utilizes an uncooled mercury cadmium telluride (MCT) detector with lock-in signal processing for chemical identification at a distance of 12.5 meters in indoor ambient light conditions. In the system, a tunable quad-QCL operating (1 MHz) in quasi-continuous wave mode between 8.45 and 10.03 μm (∼1182 to 1000 cm−1) serves as the active mid-infrared source for remotely interrogating mineral, powder, and thin film oil samples including powder mixtures (6, 12.5, 25, and 50%) of crystalline quartz (SiO2) in KB

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19

Wu Bin, 武斌, 李毅 Li Yi, 胡双双 Hu Shuangshuang, 蒋群杰 Jiang Qunjie, and 王海方 Wang Haifang. "Design and Thermal Characteristics Analysis of Uncooled 980 nm Semiconductor Laser Packaging." Chinese Journal of Lasers 36, no. 4 (2009): 799–803. http://dx.doi.org/10.3788/cjl20093604.0799.

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20

R. "Temperature Effect on Uncooled Semiconductor Laser Diode to the Network Performance System." Journal of Computer Science 8, no. 4 (2012): 551–55. http://dx.doi.org/10.3844/jcssp.2012.551.555.

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21

Liaw, Shien-Kuei, Cheng-Kai Huang, Yuan–Lung Hsiao, et al. "Low Noise-figure Miniature Erbium-doped Fibre Amplifier using Uncooled Pump Laser." Optical and Quantum Electronics 38, no. 7 (2006): 625–31. http://dx.doi.org/10.1007/s11082-006-0049-y.

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22

Pliska, Tomas, Sebastian Arlt, Rainer Bättig, et al. "Wavelength stabilized 980nm uncooled pump laser modules for erbium-doped fiber amplifiers." Optics and Lasers in Engineering 43, no. 3-5 (2005): 271–89. http://dx.doi.org/10.1016/j.optlaseng.2004.02.004.

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23

Sato, T., F. Yamaoto, K. Tsuji, H. Takesue, and T. Horiguchi. "An uncooled external cavity diode laser for coarse-WDM access network systems." IEEE Photonics Technology Letters 14, no. 7 (2002): 1001–3. http://dx.doi.org/10.1109/lpt.2002.1012412.

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24

Jiannan Zhu, Jonathan D. Ingham, Johannes Benedikt von Lindeiner, Adrian Wonfor, Richard V. Penty, and Ian H. White. "MIMO DWDM System Using Uncooled DFB Lasers With Adaptive Laser Bias Control and Postphotodetection Crosstalk Cancellation." Journal of Lightwave Technology 32, no. 21 (2014): 3974–81. http://dx.doi.org/10.1109/jlt.2014.2334474.

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25

Lim, Geunsik, Tariq Manzur, and Aravinda Kar. "Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector." Applied Optics 50, no. 17 (2011): 2640. http://dx.doi.org/10.1364/ao.50.002640.

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26

Brizido, A., M. Lima, A. Teixeira, M. Larrode, and T. Koonen. "UMTS radio over fiber link performance analysis based on low-cost uncooled laser." Microwave and Optical Technology Letters 51, no. 1 (2008): 6–9. http://dx.doi.org/10.1002/mop.23975.

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27

Chen, X. R., J. Z. Hu, Wen Zheng Han, and Bin Shi Xu. "Study on Electrical Properties and 1064nm Pulse Laser Damage of Vanadium Oxide Thin Film." Key Engineering Materials 373-374 (March 2008): 730–33. http://dx.doi.org/10.4028/www.scientific.net/kem.373-374.730.

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Vanadium oxide thin film which has a reversible semiconductor-metal phase transition has been obtained by reactive ion-beam sputtering and subsequent annealing in Ar gas. Micro-analysis shows that this thin film is homogeneous and compact, its spheric grain size is about 50nm and it is composed of VO2 and V2O5. Electrical properties testing indicate that its phase transition temperature is near 60°C, abrupt change of resistivity before and after phase transition is approximate to 3 orders of magnitude, temperature coefficient of resistance (TCR) is about -0.0393K-1 at 25°C and activation energ

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28

Пузанов, А. С., В. В. Бибикова, И. Ю. Забавичев та ін. "Моделирование реакции сверхвысокочастотного низкобарьерного неохлаждаемого диода Мотта на воздействие тяжелых заряженных частиц космического пространства и фемтосекундных лазерных импульсов". Физика и техника полупроводников 55, № 9 (2021): 743. http://dx.doi.org/10.21883/ftp.2021.09.51288.17.

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A theoretical analysis of the degradation of the current-voltage characteristic and transient ionization processes occurring in a low-barrier uncooled GaAs Mott diode under the action of heavy ions of outer space and laser pulses simulating them is carried out. The response of the diode to the action of an arsenic ion with an energy of 200 MeV, corresponding to a linear energy transfer of 26 MeV∙cm2/mg, is compared with the response to the action of femtosecond pulses of optical radiation with a duration of 10 fs with a wavelength of 870 nm and 670 nm.

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29

Еськов, V. Eskov, Борисова, et al. "Medical rehabilitation technologies in biomedical research works of scientists of the tula region (literature review)." Journal of New Medical Technologies. eJournal 8, no. 1 (2014): 1–9. http://dx.doi.org/10.12737/6038.

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The review summarizes the research activity of scientists of the Tula region aimed at creation and development of new biomedical technologies. Areas of research presented in the monographs, patents, discoveries, articles have been identified, examined and implemented in experimental, clinical practice. The research areas are the following: nano-technology, nuclear medicine, technologies of mathematical assessment of complex systems parameters, thesiography of blood and biological fluids, the use technologies of laser radiation in the diagnosis and correction of functional changes, technology o

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30

Kunitsyna E. V., Andreev I. A., Konovalov G. G., et al. "Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy." Semiconductors 56, no. 5 (2022): 340. http://dx.doi.org/10.21883/sc.2022.05.53432.9813.

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The paper considers the uncooled photodetectors based on GaInAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0-2.4 μm. The current monochromatic sensitivity at the wavelength of 2.1 μm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800-5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzing

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31

Lim, Geunsik, Tariq Manzur, and Aravinda Kar. "Laser-Doped SiC as Wireless Remote Gas Sensor Based on Semiconductor Optics." Materials Science Forum 717-720 (May 2012): 1195–98. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1195.

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An uncooled SiC-based electro-optic device is developed for gas sensing applications. P-type dopants Ga, Sc, P and Al are incorporated into an n-type crystalline 6H-SiC substrate by a laser doping technique for sensing CO2, CO, NO2 and NO gases, respectively. Each dopant creates an acceptor energy level within the bandgap of the substrate so that the energy gap between this acceptor level and the valence band matches the quantum of energy emitted by the gas of interest. The photons of the gas excite electrons from the valence band to the acceptor level, which alters the electron density in the

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32

Zhukov, A. E., E. I. Moiseev, A. M. Nadtochii, et al. "Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser." Technical Physics Letters 47, no. 9 (2021): 685–88. http://dx.doi.org/10.1134/s1063785021070142.

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33

Te-Chin Peng, Yun-Hsun Huang, Chih-Chao Yang, et al. "Low-cost and high-performance 1.3-/spl mu/m AlGaInAs-InP uncooled laser diodes." IEEE Photonics Technology Letters 18, no. 12 (2006): 1380–82. http://dx.doi.org/10.1109/lpt.2006.875524.

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34

Peng, Te-Chin, Chih-Chao Yang, Yun-Hsun Huang, Meng-Chyi Wu, Chong-Long Ho, and Wen-Jeng Ho. "Fabrication of high-speed and uncooled AlGaInAs ridge-waveguide laser diodes by STOP technique." Solid-State Electronics 50, no. 2 (2006): 142–48. http://dx.doi.org/10.1016/j.sse.2005.12.005.

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35

Lim, Geunsik, Tariq Manzur, and Aravinda Kar. "Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector: errata." Applied Optics 52, no. 4 (2013): 717. http://dx.doi.org/10.1364/ao.52.000717.

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36

Pliska, T., S. Mohrdiek, and C. Harder. "Power stabilisation of uncooled 980 nm pump laser modules from 10 to 100°C." Electronics Letters 37, no. 1 (2001): 33. http://dx.doi.org/10.1049/el:20010039.

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37

Li, T., E. J. Hao, Z. J. Li, Y. Wang, P. Lu та Y. Qu. "Optimization of active region for promising uncooled continuous wave 1.55 μm high power diode laser". Laser Physics Letters 9, № 7 (2012): 524–28. http://dx.doi.org/10.7452/lapl.201210029.

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38

Ab-Rahman. "The Effect of Temperature on the Performance of Uncooled Semiconductor Laser Diode in Optical Network." Journal of Computer Science 8, no. 1 (2012): 84–88. http://dx.doi.org/10.3844/jcssp.2012.84.88.

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39

Zhang, J., N. C. Frateschi, W. Choi, H. Gebretsadik, R. Jambunathan, and A. E. Bond. "Laser integrated modulator module for uncooled, 10 Gbit∕s 1550 nm long-reach data transmission." Electronics Letters 39, no. 25 (2003): 1841. http://dx.doi.org/10.1049/el:20031220.

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40

Sato, T. "Bit-Error Performance of a Newly Designed External-Cavity Diode Laser for Uncooled WDM Applications." Journal of Lightwave Technology 22, no. 7 (2004): 1782–88. http://dx.doi.org/10.1109/jlt.2004.824394.

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41

Behnken, Barry N., Gamani Karunasiri, Danielle R. Chamberlin, Peter R. Robrish, and Jérôme Faist. "Real-time imaging using a 28 THz quantum cascade laser and uncooled infrared microbolometer camera." Optics Letters 33, no. 5 (2008): 440. http://dx.doi.org/10.1364/ol.33.000440.

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42

Куницына, Е. В., А. А. Пивоварова, И. А. Андреев та ін. "Неохлаждаемые фотодиоды для регистрации импульсного инфракрасного излучения в спектральном диапазоне 0.9-1.8 мкм". Физика и техника полупроводников 55, № 7 (2021): 607. http://dx.doi.org/10.21883/ftp.2021.07.51027.9637.

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Uncooled GaSb/GaAlAsSb photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9-1.8 µm have been developed. Active GaSb layer was grown using lead as a neutral solvent in order to reduce the concentration of natural acceptors. The capacity of the photodiodes with a diameter of photosensitive area of 300 µm was 115−135 pF with no bias and 62−70 pF at U=−1.5 V. The photodiode speed of response measured using an InGaAsP/InP laser with a wavelength of 1.55 µm reached tau=42−60 ns in the photovoltaic mode. It is shown experimentally that the photodiodes can be used without c

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43

Yize Huang, 黄毅泽, 李. 毅. Yi Li, 王海方 Haifang Wang, et al. "Wavelength stabilization of a 980-nm semiconductor laser module stabilized with high-power uncooled dual FBG." Chinese Optics Letters 9, no. 3 (2011): 031403–31407. http://dx.doi.org/10.3788/col201109.031403.

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44

Wang, M. C., W. Lin, Y. K. Tu, and T. T. Shi. "Ultrahigh temperature and ultrahigh speed operation of 1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodes." Electronics Letters 31, no. 18 (1995): 1584–85. http://dx.doi.org/10.1049/el:19951103.

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45

Campbell, R. J., J. R. Armitage, G. Sherlock, et al. "Wavelength stable uncooled fibre grating semiconductor laser for use in an all optical WDM access network." Electronics Letters 32, no. 2 (1996): 119. http://dx.doi.org/10.1049/el:19960075.

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46

Куницына, Е. В., И. А. Андреев, Г. Г. Коновалов та ін. "Фотоприемники на основе гетероструктур GaInAsSb/GaAlAsSb для практических задач прецизионной диодной лазерной спектроскопии". Физика и техника полупроводников 56, № 5 (2022): 506. http://dx.doi.org/10.21883/ftp.2022.05.52355.9813.

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The paper considers the uncooled photodetectors based on GaInAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0 − 2.4 µm. The current monochromatic sensitivity at the wavelength of 2.1 µm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800-5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzi

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47

Fujisawa, T., S. Kanazawa, W. Kobayashi, et al. "50 Gbit/s uncooled operation (5–85°C) of 1.3 µm electroabsorption modulator integrated with DFB laser." Electronics Letters 49, no. 3 (2013): 204–5. http://dx.doi.org/10.1049/el.2012.4148.

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48

Dongsoo Bang, Jongin Shim, Joongkoo Kang, et al. "High-temperature and high-speed operation of a 1.3-/spl mu/m uncooled InGaAsP-InP DFB laser." IEEE Photonics Technology Letters 14, no. 9 (2002): 1240–42. http://dx.doi.org/10.1109/lpt.2002.801044.

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49

Yiran Liu, A. R. Davies, J. D. Ingham, R. V. Penty, and I. H. White. "Uncooled DBR laser directly Modulated at 3.125 gb/s as athermal transmitter for low-cost WDM systems." IEEE Photonics Technology Letters 17, no. 10 (2005): 2026–28. http://dx.doi.org/10.1109/lpt.2005.856367.

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50

Matharu, Ranveer S., Julien Perchoux, Russell Kliese, Yah Leng Lim, and Aleksandar D. Rakić. "Maintaining maximum signal-to-noise ratio in uncooled vertical-cavity surface-emitting laser-based self-mixing sensors." Optics Letters 36, no. 18 (2011): 3690. http://dx.doi.org/10.1364/ol.36.003690.

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