Relevant bibliographies by topics / Unipolar switching

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Unipolar switching'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 June 2025

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Journal articles on the topic "Unipolar switching"

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Lee, S. B., S. C. Chae, S. H. Chang, and T. W. Noh. "Predictability of reset switching voltages in unipolar resistance switching." Applied Physics Letters 94, no. 17 (2009): 173504. http://dx.doi.org/10.1063/1.3126019.

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Friedrichs, Peter, Heinz Mitlehner, Reinhold Schörner, Karl Otto Dohnke, Rudolf Elpelt, and Dietrich Stephani. "Application-Oriented Unipolar Switching SiC Devices." Materials Science Forum 389-393 (April 2002): 1185–90. http://dx.doi.org/10.4028/www.scientific.net/msf.389-393.1185.

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Akiskal, Hagop S. "Switching From 'Unipolar' to Bipolar II." Archives of General Psychiatry 52, no. 2 (1995): 114. http://dx.doi.org/10.1001/archpsyc.1995.03950140032004.

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Zhang, Guo-Yong, Dai-Ying Lee, I.-Chuan Yao, et al. "Unipolar Resistive Switching in ZrO2Thin Films." Japanese Journal of Applied Physics 52, no. 4R (2013): 041101. http://dx.doi.org/10.7567/jjap.52.041101.

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Jiang, Maoh Chin, Huang Kai Fu, and Kao Yi Lu. "A Single-Phase Soft-Switching Unipolar PWM Rectifier." Applied Mechanics and Materials 284-287 (January 2013): 2439–44. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.2439.

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This paper proposed a novel single-phase soft-switching unipolar PWM rectifier (SSUPR) using a simple auxiliary resonant unit. All main switches of high-frequency arm operate at zero-voltage-switching (ZVS) turn-on, while the auxiliary switches operate at zero-current-switching (ZCS) turn-off. All main switches of low-frequency arm operate at 60 Hz to greatly reduce switching losses. Moreover, a soft-switching unipolar PWM strategy is used for the proposed soft-switching rectifier. This strategy results in a better input current waveform than for the bipolar PWM strategy. Furthermore, the proposed rectifier achieves a near unity power factor, a sinusoidal input current and a bidirectional power flow capability. Some experimental results of the proposed SSUPR, rated 500 W and operated at 40 kHz, are presented for verification.
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Attia, Hussain, Hang Seng Che, Tan Kheng Suan Freddy, and Ahmad Elkhateb. "Bipolar and unipolar schemes for confined band variable switching frequency PWM based inverter." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 5 (2021): 3763. http://dx.doi.org/10.11591/ijece.v11i5.pp3763-3771.

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The single phase inverter performance through the unipolar and bipolar strategies has been previously analyzed based on the constant switching frequency pulse width modulation (CSFPWM). However, the confined band variable switching frequency PWM (CB-VSFPWM) is currently proposed as a new variable switching frequency PWM technique through unipolar strategy to facilitate the design of high order filter, to reduce the switching losses, and to reduce the current total harmonics distortion (THD) as well. To evaluate the performance of a single phase inverter based on the CBVSFPWM through bipolar strategy, this paper presents a comparative study of the CB-VSFPWM based inverter performance using the unipolar PWM and the bipolar PWM strategies. The study adopts MATLAB/Simulink to simulate the inverter and to analyze the simulation results in terms of harmonics spectrum, total harmonic distortion (THD), and fundamental components. The analysis of the study results gives an indication about the appropriate type of CB-VSFPWM strategy (unipolar PWM or bipolar PWM) to guarantee the desired performance of the connected inverter in terms of the electrical grid standards like THD, and harmonics spectrum of the inverter current.
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Горшков, О. Н., В. Г. Шенгуров, С. А. Денисов та ін. "Резистивное переключение в мемристорах на основе гетероструктур Ag/Ge/Si". Письма в журнал технической физики 46, № 2 (2020): 44. http://dx.doi.org/10.21883/pjtf.2020.02.48953.18075.

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It is shown that two modes of resistive switching – bipolar and volatile unipolar – are peculiar for the Ag/Ge/Si structures with germinating dislocations in the germanium layer. In this modes the structures have stable states of electric current with ION/IOFF ~1.5–2.7. The volatile unipolar type of switching can be caused by the capture of charge carriers to deep levels associated with lattice defects in the Ge film of the memristor. At the same time, bipolar switching is associated with the drift of Ag+ ions along germinating dislocations.
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Bhukya, Ravikumar, and P. Satish Kumar. "Analysis and Implementation of Unipolar PWM Strategies for Three Phase Cascade Multilevel Inverter Fed Induction Motor Drive." International Journal of Advances in Applied Sciences 7, no. 3 (2018): 245. http://dx.doi.org/10.11591/ijaas.v7.i3.pp245-254.

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This paper presents unipolar pulse width modulation technique with sinusoidal sampling pulse width modulation are analyzed for three-phase five-level, seven-level, nine-level and eleven-level cascaded multi-level inverter. The unipolar PWM method offers a good opportunity for the realization of the Three-phase inverter control, it is better to use the unipolar PWM method with single carrier wave compared to two reference waves. In such case the motor harmonic losses will be considerably lower.The necessary calculations for generation of unipolar pulse width modulation strategies have presented in detail. The unipolar SPWM voltage switching scheme is selected in this paper because this method offers the advantages of effectively doubling the switching frequency of the inverter voltage. The cascaded multi level inverter fed induction motor is simulated and compared the total harmonic distroction for all level (five-level, seven-level, nine-level and elevel-level)of the inverter. Theoretical investigations were confirmed by the digital simulations using MATLAB/SIMULINK software.
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Kim, Sanghoon, Jinsik Choi, Bae Ho Park, Chang-Won Lee, JaeGwan Chung, and Sunae Seo. "Unipolar Resistive Switching of EuxOy Polycrystalline Films." Journal of the Korean Physical Society 53, no. 2 (2008): 700–703. http://dx.doi.org/10.3938/jkps.53.700.

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Gao, Xu, Hongxuan Guo, Yidong Xia, Jiang Yin, and Zhiguo Liu. "Unipolar resistive switching characteristics in Co3O4 films." Thin Solid Films 519, no. 1 (2010): 450–52. http://dx.doi.org/10.1016/j.tsf.2010.07.075.

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Dissertations / Theses on the topic "Unipolar switching"

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Olsson, Johanna. "Implementation of Nodes in HVDC Grids." Thesis, KTH, Skolan för elektroteknik och datavetenskap (EECS), 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-293884.

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This project is made for a deeper understanding ofhow frequency and amplitude of the waves that create the controlwave in a Pulse Width Modulated 2-level inverter affect the powerquality and power losses. The results were that a high frequencyreduces the Total Harmonic Distortion but increases the powerloss. The amplitude, however, reduces both the Total HarmonicDistortion and the power loss as it increases. All the analyseswere done in a simulation program called Simulink. The resultscan be applied when improving High Voltage Direct Currentinverters to develop a functional High Voltage Direct Currentgrid that enables wider use of renewable energy sources.<br>Projektet syftar till att få en djupare förståelse för hur frekvensen och amplituden på de vågor som skapar kontollvågen i en pulsbreddsmodulerad likspänningsomvandlare med två nivåer påverkar effektkvalitén och effektförlusterna. Resultatet av studien var att en hög frekvens minskar ”Total Harmonic Distortion” men ökar effektförlusterna. Amplituden å andra sidan reducerar både ”Total Harmonic Distortion” och effektförlusterna när den ökar. Alla analyserna är gjorda i simuleringsprogrammet Simulink. Resultaten kan appliceras när högspända likspänningsomvandlare vidareutvecklas för att skapa ett fungerande högspänt-likströms elnät som öppnar upp för en bredare användning av förnyelsebara energikällor.<br>Kandidatexjobb i elektroteknik 2020, KTH, Stockholm
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Snítilý, David. "Autonomní záložní zdroj 230V/50Hz/300VA s bateriovým napájením 12V." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-217587.

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The aim of this project is to describe, design and create a converter from 12V DC to 230 VRMS. The power of this device is about 500W. The device consists of two main converters. The first one is step-up DC/DC converter and the other is DC/AC inverter. Step-up converter is designed as a resonant converter. It is useful for pushing down losses in semiconductors and inceasing efficiency. The inverter is changing DC voltage from the first converter to AC voltage. Control of this device is realized with DSP Motorola. This device should be used mainly for supply common devices up to 500W. Main usage is planed in a car or to another place where is not posible to connect some device to plug.
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Farhi, Ghania. "Fabrication, simulation et caractérisation des propriétés de transport de composants à effet de champ latéral sur substrat de soi (Silicon-on-insulator)." Thèse, Université de Sherbrooke, 2014. http://hdl.handle.net/11143/6016.

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À la base de l’évolution de la technologie microélectronique actuelle, la réduction des dimensions critiques des MOSFET standards pour améliorer leurs performances électriques a atteint depuis quelques années ses limites physiques. L’utilisation de nanocomposants innovateurs ayant une configuration planaire, comme solution de remplacement, semble être une voie prometteuse pour certaines applications. Les diodes autocommutantes, Self-Switching Diodes (SSD), en font partie. Les SSD sont des composants unipolaires à deux accès ayant une caractéristique I-V non-linéaire semblable à celle d’une diode bipolaire. Leur configuration planaire rend leur fabrication plus facile et réduit considérablement les capacités parasites intrinsèques. Cette thèse porte sur la fabrication, la simulation et la caractérisation électrique de SSD fabriquées sur des substrats en SOI (Silicon-On-Insulator). Les dispositifs SSD ont été réalisés au départ grâce à des gravures par FIB (Focussed Ion Beam). Cette technique polyvalente nous permet de contrôler en temps réel les conditions de gravure. Par la suite, nous avons procédé à une fabrication massive de SSD en utilisant la technique d’électrolithographie et de gravure sèche. Les simulations effectuées principalement avec TCAD-Medici nous ont permis d’optimiser et d’investiguer en détails l’effet critique des paramètres géométriques (longueur, largeur et épaisseur du canal conducteur ainsi que la largeur des tranchées isolantes) et des paramètres physiques (densité surfacique aux niveaux des interfaces isolant/semiconducteur, densité des dopants et type de diélectrique dans les tranchées isolantes) des SSD sur les caractéristiques électriques, les valeurs de la tension seuil et les phénomènes de transport non linéaire qui ont lieu dans le canal conducteur de ce type de composants. Les mesures expérimentales de caractéristiques I-V de SSD ayant des canaux conducteurs de largeurs et de longueurs variables confirment les prévisions de nos simulations. Bien que le comportement électrique des SSD ressemble à celui d’un MISFET, nous démontrons le fait que l’on ne peut modéliser leurs caractéristiques I-V avec les mêmes expressions en nous basant sur le principe de fonctionnement spécifique à chacun de ces deux dispositifs.
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Chen, Chia-Hung, and 陳佳宏. "Unipolar and bipolar resistive switching behaviors in transition metal oxides." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/74016178025359544756.

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碩士<br>國立聯合大學<br>電子工程學系碩士班<br>98<br>TiO2 films deposited by sol-gel method with two process variables are prepared to investigate the bipolar resistive switching (BRS) and unipolar resistive switching (URS) in metal/insulator/metal structure cells, and the difference between BRS and URS is the polarity of the on/off state transition voltage in the current-voltage curves. The first variable is the thermal treatment atmosphere in Ag/TiO2/Pt cells. The cells are URS in air atmosphere and BRS in oxygen atmosphere. The second variable is the bottom electrode materials of TiO2 cells, which are thermal treatment in air atmosphere. The cells are URS on Pt metal electrode and BRS on ITO oxide electrode. Compared with URS cells, BRS cells are lower in the operation voltage (BRS:1V < URS:2V) and current (BRS:10-3A < URS:10-2A), while higher in operation stability under multi-switching cycles (BRS:0.1V > URS:2.6V). Analyzing the IV curves in full-logarithmic plot, we find that by observing the fitting curves which show linear dependence (I?fV) at smaller voltage and the square one (I?fV2) at higher voltage, the carrier conduction mechanism concurs with space-charge-limited current theory. We infer that the critical factors for inducing URS or BRS could be the depth of traps in the film.
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Alexandrov, Petre. "Development of 4H-SiC high voltage unipolar power switching devices." 2009. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051772.

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Li, Han-siang, and 栗漢翔. "Unipolar Resistive Switching Investigation of ZrO2 and ZrO2-NiO Dielectric Layer." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/11334396072891422012.

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碩士<br>國立臺灣科技大學<br>材料科學與工程系<br>100<br>This thesis focuses on the investigation of RRAM (Resistive Switching Random Accessing Memory) using ZrO2 and ZrO2-NiO thin films as dielectric layer and Al as bottom and top electrodes. Performance of the RRAM can be improved by adjusting the amount of oxygen or NiO in the dielectric thin film. Through the manipulation of the oxygen content and the thickness of ZrO2 thin films, voltage of forming process could be reduced. Studying of conducting mechanism shows that the forming process might be related with the presence of native oxide of Al bottom electrode. Al/ZrO2/Al could successfully achieve resistive switching using variety of oxygen contents, However, the difference of the high and low resistance in repeated resistive switching would be reduced using the lowest content of oxygen content in this experiment. Vset and Vreset are overlapped no mater what oxygen content were used in the ZrO2 films. The problem of overlapping of Vset and Vreset could be solved when Al/ZrO2-NiO/Al were prepared by mixing up NiO with ZrO2. The difference of the high and low resistance in repeated resistive switching would be reduced, and it is solved by using higher oxygen content. Furthermore, NiO may be present in conducting path and change the conducting mechanism.
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Huang, Tai-Yuan, and 黃泰源. "Unipolar resistive switching behavior of ZrO2 memory thin film with CaO:ZrO2." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/51798799511477368495.

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碩士<br>國立交通大學<br>電子研究所<br>98<br>Many kinds of consumer electrical commercial products are becoming more and more popular following with the development of the technology. All kinds of products need the memory, especially non-volatile memory, which can store data without power. The resistive switching random access memory (RRAM) is one of the next generational memories that have the chance to become the mainstream. It has the advantages of high cell density, high operation speed, low power consumption, high endurance, lower scale limit, non-destructive readout, and easy processing that can fit in the CMOS process, so it is one of the potential substitutions for flash memories. In this thesis, the resistive switching characteristics are investigated based on the Ti/CaO:ZrO2/ZrO2/Pt structure, and the research focus on some issues. First, the top electrodes are changed. Second, the doped concentration of CaO:ZrO2 and the deposition time of CaO:ZrO2 are changed. In the end, we will change the structure to understand the mechanism of unipolar switching. First, we use the various top electrodes to compare the DC sweep cycles, and the suitable condition is Ti top electrode. In the second part, the concentration of the CaO:ZrO2 is changed to four concentrations:0.03at%,0.06at%,0.12at%and0.16at%. The optimal value is 0.12at%, so the following research will be focused on 0.12at%. In the third part, the deposition time of the CaO:ZrO2 is changed to three kinds:5min,10min and 15min.The proper time is 5min.Therefore,the best condition for our structure is Ti/CaO:ZrO2(0.12at% 5min)/ZrO2/Pt. The performance of the structure is good. DC sweep cycle times can over 300 times; retention test is 106s; and there is no data loss at the nondestructive readout test for over 50000 seconds. In the end, the purpose is to know the mechanism of the RRAM, so the structure is changed. First, it is necessary for double layer. Second, the top electrode is necessary to contact on the doped layer. The results will be discussed on the thesis in the following chapters. This thesis is not only improving the unpolar switching but searching for the possible mechanism for the unipolar switching.
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Ho, Tsung-Han, and 何宗翰. "Unipolar Resistive Switching Characteristics of ZrO2-Based RRAM and its Application." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/07573770460836974112.

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碩士<br>國立交通大學<br>電子工程學系 電子研究所<br>102<br>In this thesis, the unipolar resistive switching mechanism and characteristics are investigated in the structure of ZrO2-based resistive random access memory (RRAM) with TaN electrode. There are two parts in the thesis. The first part we focus on the implementation and electrical properties of one diode one resistor (1D1R) structure. In the 1D1R structure, the oxide diode is composed of p-type CoO and n-type ZnO film. The rectifying ratio of the oxide diode can reach 8×104 and after 7000 cycles with high current passing, it can still remain the high rectifying ratio. On the other hand, the RRAM is consisted of ZrO2 and HfO2 bilayer structure with TaN electrode, and demonstrates the unipolar switching behavior. Finally, the DC endurance didn’t show any degradation until over 3000 cycles in the 1D1R structure. The second part is that we hope by using Ni as the top electrode in Ni/ZrO2/TaN structure, the device would improve the RRAM characteristics in first part. It shows the unipolar resistive switching characteristics. Furthermore, we can improve the electrical properties by post metal annealing. With the annealing process, both the operation voltage (Vreset/Vset, 0.7/1.5V) and current can be decreased effectively. It also enhanced the DC endurance up to 17000 cycles. Moreover, the structure in this part can actually improve the RRAM in the first part, and it could be used in further 1D1R structure to prevent mis-reading problem in cross-bar structure.
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Wu, Jia-Woei, and 吳家瑋. "Unipolar Switching Properties of ZrO2-based Resistive Memory with Double-layer Structure." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/73865091697896799058.

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碩士<br>國立交通大學<br>電子研究所<br>99<br>Due to the development of electronic products, the larger capacity of memory is needed. Among all kinds of memories, the most promising volatile memory is resistive memory. Resistive memory has simple structure, fast operation speed, low power consumption, high cell density and non-destructive readout, therefore it is possible to replace other memories such as DRAM, FRAM and FLASH to be the next-generation non-volatile memory. From the electrical measurements of ZrO2 double-layer memory, we find that there are three factors in the improvement of endurance during fabrication.The first one is the ratio of Ar to O2 is better to be kept at 2: 16 or 16: 2 when we sputter the double-layer films. Another factor is the upper ZrO2 layer has to be thinner(5nm) while the bottom layer has to be thicker(30nm). The final factor is that the best switching cycles occur when the upper ZrO2 layer is deposited in OD atmosphere while the bottom layer is deposited in OR atmosphere. As for reliability test, the sample was stable over 10000s during non-destructive readout at -0.3V. Retention test showed that our samples could remain 105s without degradation at RT and 150℃. Beside, the switching cycles was more than 1000 cycles. We also constructed CoO and ZrO2 double-layer structure to fabricate resistive memory and oxide diode. The key point for oxide diode is proper ratio of Ar to O2 in order to make CoO become P-type material while ZrO2 become N-type material. Such oxide diode had rectifying ratio = 1000 at 3V. If the Ar/O2 ratio could make CoO become P-type material, the double-layer structure of CoO and ZrO2 would show the characteristics of resistive memories. Moreover, the endurance was up to 400 cycles.
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Lin, Jon-Hong, and 林炯宏. "Analysis of High Efficient EER Power Amplifier employing PWM with Unipolar Voltage Switching." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/47389456512130277315.

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碩士<br>國立交通大學<br>電信工程系<br>89<br>Envelope elimination and restoration （EER）method is proposed to improve linearity and efficiency of power amplifier for modern digital mobile communication system. The limitations of bandwidth and signal delay in the EER amplifier are intensively examined. The technique of PWM (pulse width modulation) with unipolar voltage switching is presented to solve the problems of limited bandwidth and signal delay caused by low switching speed of the components simultaneously. In the meantime, the performance of the new EER amplifier applying to IS-95 system is studied by ADS.
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Book chapters on the topic "Unipolar switching"

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Goux, Ludovic, and Sabina Spiga. "Unipolar Resistive-Switching Mechanisms." In Resistive Switching. Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527680870.ch13.

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Howland, R. H., and M. E. Thase. "Switching Strategies for the Treatment of Unipolar Major Depression." In Mood Disorders. KARGER, 1997. http://dx.doi.org/10.1159/000061660.

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Bertilsson, Kent, and Chris I. Harris. "Comparison of Bipolar and Unipolar SiC Switching Devices for Very High Power Applications." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.975.

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"Unipolar Power Switching Devices." In Fundamentals of Silicon Carbide Technology. John Wiley & Sons Singapore Pte. Ltd, 2014. http://dx.doi.org/10.1002/9781118313534.ch8.

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Ghedira, Sami, Faten Ouaja Rziga, Khaoula Mbarek, and Kamel Besbes. "Coexistence of Bipolar and Unipolar Memristor Switching Behavior." In Memristors - Circuits and Applications of Memristor Devices [Working Title]. IntechOpen, 2019. http://dx.doi.org/10.5772/intechopen.85176.

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Conference papers on the topic "Unipolar switching"

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Hosoi, Y., Y. Tamai, T. Ohnishi, et al. "High Speed Unipolar Switching Resistance RAM (RRAM) Technology." In 2006 International Electron Devices Meeting. IEEE, 2006. http://dx.doi.org/10.1109/iedm.2006.346732.

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Lee, Hyung Dong, and Yoshio Nishi. "Understanding of switching phenomena in unipolar NiO-based RRAM." In 2010 Ieee Globecom Workshops. IEEE, 2010. http://dx.doi.org/10.1109/glocomw.2010.5700270.

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Jiang, Maoh-Chin, Shyh-Shing Perng, Huang-Kai Fu, Ya-Chi Chien, and Kuei Wu-Chang. "A novel single-phase soft-switching unipolar PWM rectifier." In TENCON 2011 - 2011 IEEE Region 10 Conference. IEEE, 2011. http://dx.doi.org/10.1109/tencon.2011.6129229.

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Jiang, Maoh-Chin, Wei-Shiang Wang, Huang-Kai Fu, and Kuei Wu-Chang. "A novel single-phase soft-switching unipolar PWM inverter." In ECCE Asia (ICPE 2011- ECCE Asia). IEEE, 2011. http://dx.doi.org/10.1109/icpe.2011.5944785.

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Chen, An, and Ming-Ren Lin. "Thermal effects and instability in unipolar resistive switching devices." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994473.

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Zhou, Y., Z. Wang, X. Hao, et al. "Unipolar switching of perpendicular mtj for STT-MRAM application." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157689.

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Ghedira, Sami, Khaoula Mbarek, Faten Ouaja Rziga, and Kamel Besbes. "The Nonlinear Bipolar and Unipolar Switching Behavior of a Memristor." In 2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS). IEEE, 2019. http://dx.doi.org/10.1109/dtss.2019.8915346.

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Liu, C., M. Mustaqima, P. Yoo, D. Kim, and B. Lee. "Unipolar resistive switching in spin-coated cobalt ferrite thin films." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157088.

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Sun, H. T., Q. Liu, D. L. Xun, et al. "Understanding of the Abnormal Unipolar Resistance Switching Behavior in CBRAM." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-4-10.

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Chien, Wei-Chih, Erh-Kun Lai, Kuo-Pin Chang, et al. "Unipolar Switching Characteristics for Self-Aligned WOx Resistance RAM (R-RAM)." In 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA). IEEE, 2008. http://dx.doi.org/10.1109/vtsa.2008.4530838.

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