Relevant bibliographies by topics / Unity Gain Bandwidth (UGBW)

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Academic literature on the topic 'Unity Gain Bandwidth (UGBW)'

Author: Grafiati
Published: 3 June 2025
Last updated: 20 July 2025

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Journal articles on the topic "Unity Gain Bandwidth (UGBW)"

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C. S., Sajin, Nissan Kunju, and T. A. Shahul Hameed. "Design and Simulation of Two Stage Wideband CMOS Amplifier in 90 NM Technology." International Journal on Recent and Innovation Trends in Computing and Communication 11, no. 2s (2023): 249–58. http://dx.doi.org/10.17762/ijritcc.v11i2s.6144.

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Design and simulation of 7 GHz CMOS wideband amplifier(CMOSWA) using a modified cascode circuit realized in 90-nm CMOS technology is presented here. The proposed system consists of two stages, namely a modified folded cascode and an inductively degenerated common source amplifier. The circuit is experimented with and without a feedback network. This work discusses the performance variation as a function of reactive components, and the initial stage results in 22 dB gain,2.6 GHz bandwidth, and 40GHz unity gain-bandwidth. The circuit without the feedback network exhibits 30.7dB gain,4.8GHz bandwidth(BW), and 10GHz unity-gain bandwidth(UGB). The reactive feedback network's inclusion helped to achieve 38.7 dB gain, 6.95GHz BW, 30GHz UGB, and 55o phase margin. The circuit consumes 1.4mW power from a 1.8V power supply. Simulation results of the proposed circuit are comparable and better than the reported wideband designs in the literature. Realization of our proposed circuit would add value to the area of wideband amplifier design.
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Li, Wenhui, Daishi Tian, Hao Zhu, and Qingqing Sun. "A Programmable Gain Amplifier Featuring a High Power Supply Rejection Ratio for a 20-Bit Sigma-Delta ADC." Electronics 14, no. 4 (2025): 720. https://doi.org/10.3390/electronics14040720.

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A programmable gain amplifier (PGA) is commonly used to optimize the input dynamic range of high-performance systems such as headphones and biomedical sensors. But PGA is rather sensitive to electromagnetic interference (EMI), which limits the precision of these systems. Many capacitor-less low-dropout regulator (LDO) schemes with high power supply rejection have been proposed to act as the independent power supply for PGA, which consumes additional power and area. This paper proposed a PGA with a high power supply rejection ratio (PSRR) and low power consumption, which serves as the analog front-end amplifier in the 20-bit sigma-delta ADC. The PGA is a two-stage amplifier with hybrid compensation. The first stage is the recycling folded cascode amplifier with the gain-boost technique, while the second stage is the class-AB output stage. The PGA was implemented in the 0.18 μm CMOS technology and achieved a 9.44 MHz unity-gain bandwidth (UGBW) and a 57.8° phase margin when driving the capacitor of 5.9 pF. An optimum figure-of-merit (FoM) value of 905.67 has been achieved with the proposed PGA. As the front-end amplifier of a high-precision ADC, it delivers a DC gain of 162.1 dB, the equivalent input noise voltage of 301.6 nV and an offset voltage of 1.61 μV. Within the frequency range below 60 MHz, the measured PSRR of ADC is below −70 dB with an effective number of bits (ENOB), namely 20 bits.
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Fan, Xinlan, Feifan Gao, and Pak Kwong Chan. "Design of a 0.5 V Chopper-Stabilized Differential Difference Amplifier for Analog Signal Processing Applications." Sensors 23, no. 24 (2023): 9808. http://dx.doi.org/10.3390/s23249808.

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This paper presents a low-voltage low-power chopper-stabilized differential difference amplifier (DDA) realized using 40 nm CMOS technology. Operating with a supply voltage of 0.5 V, a three-stage DDA has been employed to achieve an open-loop gain of 89 dB, while consuming just 0.74 μW of power. The proposed DDA incorporates feed-forward frequency compensation and a Type II compensator to achieve pole-zero cancellation and damping factor control. The DDA has a unity-gain bandwidth (UGB) of 170 kHz, a phase margin (PM) of 63.98°, and a common-mode rejection ratio (CMRR) of up to 100 dB. This circuit can effectively drive a 50 pF capacitor in parallel with a 300 kΩ resistor. The use of the chopper stabilization technique effectively mitigates the offset and 1/f noise. The chopping frequency of the chopper modulator is 5 kHz. The input noise is 245 nV/sqrt (Hz) at 1 kHz, and the input-referred offset under Monte Carlo cases is only 0.26 mV. Such a low-voltage chopper-stabilized DDA will be very useful for analog signal processing applications. Compared to the reported chopper DDA counterparts, the proposed DDA is regarded as that with one of the lowest supply voltages. The proposed DDA has demonstrated its effectiveness in tradeoff design when dealing with multiple parameters pertaining to power consumption, noise, and bandwidth.
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Prasad, Deepak, and Vijay Nath. "An Ultra Low Power CMOS Sigma Delta ADC Modulator for System-on-chip (SoC) Temperature Sensor for Aerospace Applications." International Journal of Reconfigurable and Embedded Systems (IJRES) 7, no. 1 (2018): 12. http://dx.doi.org/10.11591/ijres.v7.i1.pp12-20.

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In the current paper, an accurate with low power consumed sigma delta (ΣΔ) analog to digital converter has been designed for the aerospace applications. The sigma delta ADC has been designed in such a way that it works fine with consumption of low power and high accuracy in the system on chip (SoC) temperature sensor where the analog output from the temperature sensor unit will be the fed to the analog to digital converter. To check the robustness, different parameters with variation has been analyzed. The high gain operational amplifier plays a vital role in the circuits design. Hence, a 30 MHz operational amplifier has also been proposed whose unity gain bandwidth (UGB) has been observed of about 30 MHz, 51.1dB dc gain and slew rate (SR) of about 27.9 V/ μsec. For the proper operation of the circuit, a power supply of +1.3V to -1.3V is used. The proposed sigma delta ADC modulator is showing better results over previously designed modulator in terms of power consumption, error and performance. The design and simulation have been tested with the help of cadence analog design environment with UMC 90nm CMOS process technology.
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Deepak, Prasad, and Nath Vijay. "An Ultra Low Power CMOS Sigma Delta ADC Modulator for System-on-chip (SoC) Temperature Sensor for Aerospace Applications." International Journal of Reconfigurable and Embedded Systems 7, no. 1 (2018): 12–20. https://doi.org/10.11591/ijres.v7.i1.pp12-20.

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In the current paper, an accurate with low power consumed sigma delta (ΣΔ) analog to digital converter has been designed for the aerospace applications. The sigma delta ADC has been designed in such a way that it works fine with consumption of low power and high accuracy in the system on chip (SoC) temperature sensor where the analog output from the temperature sensor unit will be the fed to the analog to digital converter. To check the robustness, different parameters with variation has been analyzed. The high gain operational amplifier plays a vital role in the circuits design. Hence, a 30 MHz operational amplifier has also been proposed whose unity gain bandwidth (UGB) has been observed of about 30 MHz, 51.1dB dc gain and slew rate (SR) of about 27.9 V/ µsec. For the proper operation of the circuit, a power supply of +1.3V to -1.3V is used. The proposed sigma delta ADC modulator is showing better results over previously designed modulator in terms of power consumption, error and performance. The design and simulation have been tested with the help of cadence analog design environment with UMC 90nm CMOS process technology.
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H. L., Rajath Ithal, Shylashree N., Mamatha A. S., and Nikhil B. G. "Design and Comparison of Constant Transconductance Architectures." WSEAS TRANSACTIONS ON ELECTRONICS 15 (April 2, 2024): 17–26. http://dx.doi.org/10.37394/232017.2024.15.3.

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Constant transconductance (Gm) biasing circuits, as the name suggests, generate a bias current that ensures that the Gm of a MOS transistor remains constant. The Gm of a MOS transistor is a very important parameter as various other parameters of a circuit such as the gain, UGB (Unity Gain Bandwidth, poles, and zeros are strongly dependent upon it. Every analog circuit in a chip is subjected to varying PVT (Process, Voltage, and Temperature) conditions. This leads to a varying Gm of the devices, and hence the parameters such as the gain and UGB also tend to vary. Hence, constant Gm biasing is crucial in systems, where the parameters are expected to be constant regardless of the external factors. The majority of constant Gm biasing circuits make use of an external off-chip resistor. While this is a reasonable solution, it adds to the cost, area, and complexity of the solution. Hence, it is vital to model and design all the required functionalities within the chip, eliminating the requirement for any external components. In this paper, different architectures of constant Gm biasing circuits are designed and simulated in Cadence Virtuoso software. The proposed architecture has an error of 6.42% in the variation of transconductance, which is a significant improvement concerning the other architectures simulated. Additionally, the proposed architecture does not require any off-chip components while the other architectures require an off-chip resistor. Hence, the proposed solution has reduced cost and complexity.
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Sajin., C.S, and A. Shahul Hameed T. "Review of CMOS Amplifiers for High Frequency Applications." International Journal of Engineering and Advanced Technology (IJEAT) 10, no. 2 (2020): 175–80. https://doi.org/10.5281/zenodo.5527529.

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The headway in electronics technology proffers user-friendly devices. The characteristics such as high integration, low power consumption, good noise immunity are the significant benefits that CMOS offer, paying many challenges simultaneously with it. The short channel effects and presence of parasitic which prevent speed pose questions on the performance parameters. A great sort of works has done by many groups in the design of the CMOS amplifier for high-frequency applications to discuss the parameters such as power consumption, high bandwidth, high speed and linearity trade-off to obtain an optimized output. A lot of amplifier topologies are experimented and discussed in the literature with its design and simulation. In this paper, the various efforts associated with CMOS amplifier circuit for high-frequency applications are studying extensively.
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He, Luchang, Xi Li, Siqiu Xu, et al. "A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory." Sensors 22, no. 23 (2022): 9367. http://dx.doi.org/10.3390/s22239367.

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In this paper, a fast-transient-response NMOS low-dropout regulator (LDO) with a wide load-capacitance range was presented to provide a V/2 read bias for cross-point memory. To utilize the large dropout voltage in the V/2 bias scheme, a fast loop consisting of NMOS and flipped voltage amplifier (FVA) topology was adopted with a fast transient response. This design is suitable to provide a V/2 read bias with 3.3 V input voltage and 1.65 V output voltage for different cross-point memories. The FVA-based LDO designed in the 110 nm CMOS process remained stable under a wide range of load capacitances from 0 to 10 nF and equivalent series resistance (ESR) conditions. At the capacitor-less condition, it exhibited a unity-gain bandwidth (UGB) of approximately 400 MHz at full load. For load current changes from 0 to 10 mA within an edge time of 10 ps, the simulated undershoot and settling time were only 144 mV and 50 ns, respectively. The regulator consumed 70 µA quiescent current and achieved a remarkable figure-of-merit (FOM) of 1.01 mV. At the ESR condition of a 1 µF off-chip capacitor, the simulated quiescent current, on-chip capacitor consumption, and current efficiency at full load were 8.5 µA, 2 pF, and 99.992%, respectively. The undershoot voltage was 20 mV with 800 ns settling time for a load step from 0 to 100 mA within the 10 ps edge time.
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Wang, Lin Feng, Qiao Meng, and Hao Zhi. "Design of a Gain-Boosted Cascode Amplifier with High Unity-Bandwidth." Applied Mechanics and Materials 614 (September 2014): 237–40. http://dx.doi.org/10.4028/www.scientific.net/amm.614.237.

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This paper presents a high unity gain bandwidth fully differential folded-cascode operational amplifier using gain-boosted technique. The amplifier is designed in TSMC 0.18μm 1P6M CMOS technology. The unity-gain bandwidth (GBW) and poles of the gain-boosting amplifiers were carefully designed to improve the stability. The implemented design provides a direct current (DC) gain of around 93 dB with a unity gain frequency of 1.8GHz. It exhibits a DC gain larger than 88dB when the output common-mode voltage between 0.6 V and 1.2V. the overall layout size is 96μm×120μm.
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Zou, Yuheng. "Design and Analysis of Miller Compensated Two-Stage Operational Amplifier." Applied and Computational Engineering 107, no. 1 (2024): 14–23. http://dx.doi.org/10.54254/2755-2721/107/20241072.

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Abstract. With the development of integrated circuit technology, the size of electronic equipment continues to reduce, and speed continues to increase. Operational amplifiers are the key circuit in analog ICs, and the required performance of operational amplifiers is also increasingly high, research and design of high-performance operational amplifiers has become one of the key topics of today's research. A CMOS two-stage operational amplifier with high unity-gain bandwidth is analysed and designed with an appropriate Miller-compensation technique in this research to improve the frequency characteristics and stability. The design is based on 180nm CMOS process. Its performance is simulated and analysed in Cadence software environment. The performance parameters are shown by simulation results that the amplifier has a gain of 61.81dB, a GB (unity-gain bandwidth) of 907.42MHz and a phase margin of 75.02. The experimental results show that it achieves high unity-gain bandwidth while ensuring gain and stability. Through this study, the principles of two-stage operational amplifiers and their compensation as well as the design and simulation are shown in detail in both theoretical and experimental sections.
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Dissertations / Theses on the topic "Unity Gain Bandwidth (UGBW)"

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Rodrigues, Ricardo Martins Felício Marques. "Enhancing the bandwidth of a-IGZO TFT amplifiers using circuit design techniques." Master's thesis, 2019. http://hdl.handle.net/10362/89183.

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Amorphous oxide thin-film transistor (TFT) technology has become central in flexible and low-cost electronic applications. However, there are some limitations of the technology for circuit implementation, particularly the lack of stable and reproducible p-type oxide TFTs, limited speed due to poor semiconductor mobility and to large channel lengths when com-pared to single crystalline Si devices. These limitations demand novel circuit design techniques using only n-type TFTs to achieve high-speed circuits meeting the requirement of practical applications. This work aims to improve the low unity current gain frequency of operation of a-IGZO based amplifiers using only circuit-based techniques, without changing the device structure, fabrication steps and materials. Simulations in Cadence environment were performed in five different amplifier structures, employing a-IGZO TFTs based on an in-house model developed with artificial neural networks. Up to three-fold improvement on bandwidth was verified, with minimal increases in power consumption and chip area. The concepts explored here are thus quite relevant to enhance low-MHz range circuits, as required for RFID and biomedical applications.
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Book chapters on the topic "Unity Gain Bandwidth (UGBW)"

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Fathi, Amir, Sarkis Azizian, and Nastaran Sharifan. "Sensors and Amplifiers." In Handbook of Research on Nanoelectronic Sensor Modeling and Applications. IGI Global, 2017. http://dx.doi.org/10.4018/978-1-5225-0736-9.ch016.

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Sensors are electrical-mechanical elements which are the interface between environment and electrical systems. The input of sensors is characteristics of the environment for example temperature, pressure and etc. and their output is a small electric voltage or current. Their job is to convert environment characteristics to an electric voltage or current at their outputs. Since the output current or voltage is very small, it must be amplified in order to be suitable for use in electronic systems. In this chapter we completely explain the design procedure and characteristics of sensor amplifiers. The important parameters of sensor amplifiers are input and output resistance, gain, unity gain bandwidth and etc. One of the most important characteristics of amplifiers is the linearity of amplification in a way that it must have uniformity for all amplitude voltages or currents in all frequencies of the bandwidth. For this purpose, first the operational amplifier is completely discussed, then the linearity of feedback operation will be explained.
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Polanco-Martagón, Said, Gerardo Reyes Salgado, Georgina Flores Becerra, and Esteban Tlelo Cuautle. "Distributed Selection of the Optimal Sizes of Analog Unity Gain Cells by Fuzzy Set Intersection." In Advances in Computer and Electrical Engineering. IGI Global, 2015. http://dx.doi.org/10.4018/978-1-4666-6627-6.ch008.

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A distributed system based on Fuzzy sets to select the optimal sizes of Unity Gain Cells (UGCs) is introduced. A zoom technique is also introduced to search for the optimal sizes in a more refined way. The selected sizes accomplish target specifications established by linguistic variables, namely gain “closer to” unity and “large” bandwidth, which are represented by fuzzy sets. The case of study is focused on three Voltage Follower and a CFOA whose performance characteristics are evaluated by using IC technology of 0.35µm and 180µm, respectively, and the circuit simulation program SPICE. Every circuit is codified by the width and large (W/L) of every Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) and by its bias current source. From the population of feasible solutions computed by evolutionary algorithms, the optimal W/L sizes are selected by the proposed distributed system through the intersection of fuzzy sets.
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Conference papers on the topic "Unity Gain Bandwidth (UGBW)"

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Picos, Rodrigo, Joan Font-Rossello, Eugeni Garcia-Moreno, and Antonio E. Teruel. "Fast and accurate estimation of gain and unity-gain bandwidth of an OpAmp." In 2012 19th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2012). IEEE, 2012. http://dx.doi.org/10.1109/icecs.2012.6463500.

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Hart, Adam, and Sorin P. Voinigescu. "A SiGe BiCMOS operational amplifier with 48dB of gain and 9GHz unity gain bandwidth." In 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM. IEEE, 2008. http://dx.doi.org/10.1109/bipol.2008.4662701.

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Budyakov, A., K. Schmalz, N. N. Prokopenko, C. Scheytt, and P. Ostrovskyy. "Design of bipolar differential opamps with unity gain bandwidth up to 23 GHz." In 2008 4th European Conference on Circuits and Systems for Communications (ECCSC. IEEE, 2008. http://dx.doi.org/10.1109/eccsc.2008.4611656.

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Pal, Soumen, and Manash Chanda. "Design and analysis of large unity gain bandwidth operational amplifier for low-voltage applications." In 2017 IEEE Calcutta Conference (CALCON). IEEE, 2017. http://dx.doi.org/10.1109/calcon.2017.8280750.

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Zhou, Yong, Yanqi Zheng, and Ka Nang Leung. "An Output-Capacitorless Low-Dropout Regulator with High Slew Rate and Unity-Gain Bandwidth." In 2020 IEEE International Symposium on Circuits and Systems (ISCAS). IEEE, 2020. http://dx.doi.org/10.1109/iscas45731.2020.9181142.

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Biswas, Richard Victor, Rajia Sultana, Md Inteshar Ishrak, Rajit Palit Atri, and Mahmudul Hasan Ahanaf. "An 87.25 dB Open-Loop Gain, 2.09 GHz Unity Gain Bandwidth 3-Stage Operational Amplifier Implemented Using 45nm Technology." In 2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT). IEEE, 2024. http://dx.doi.org/10.1109/iceeict62016.2024.10534387.

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Voinigescu, S. P., R. Beerkens, T. O. Dickson, and T. Chalvatzis. "Design methodology and applications of SiGe BiCMOS cascode opamps with up to 37-GHz unity gain bandwidth." In IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE, 2005. http://dx.doi.org/10.1109/csics.2005.1531841.

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Chen, Yong, Pui-In Mak, Chirn Chye Boon, and Rui P. Martins. "A 0.024-mm2 45.4-GHz-Bandwidth Unity-Gain Output Driver with SDD22<-10dB up to 35 GHz." In 2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2020. http://dx.doi.org/10.1109/mwscas48704.2020.9184497.

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Zihong Liu, Chao Bian, Zhihua Wang, and Chun Zhang. "Full custom design of a two-stage fully differential CMOS amplifier with high unity-gain bandwidth and large dynamic range at output." In 48th Midwest Symposium on Circuits and Systems, 2005. IEEE, 2005. http://dx.doi.org/10.1109/mwscas.2005.1594268.

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Wang, Xueping, Xiaorui Zhu, and Shengxi Diao. "A Unity-Gain Buffer with 1.6GHz Bandwidth and $1900\mathrm{V}/\mu \mathrm{s}$ Slew Rate based on an OPA Adopting Cascaded Class-AB Structure." In 2022 15th International Congress on Image and Signal Processing, BioMedical Engineering and Informatics (CISP-BMEI). IEEE, 2022. http://dx.doi.org/10.1109/cisp-bmei56279.2022.9979885.

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