Academic literature on the topic 'UV Lithography process'

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Journal articles on the topic "UV Lithography process"

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Hirai, Yoshihiko. "UV-Nanoimprint Lithography (NIL) Process Simulation." Journal of Photopolymer Science and Technology 23, no. 1 (2010): 25–32. http://dx.doi.org/10.2494/photopolymer.23.25.

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Shibata, Mayuko, Akira Horiba, Yoshinori Nagaoka, Hiroaki Kawata, Masaaki Yasuda, and Yoshihiko Hirai. "Process-simulation system for UV-nanoimprint lithography." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 6 (2010): C6M108—C6M113. http://dx.doi.org/10.1116/1.3511789.

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Barouch, E., U. Hollerbach, S. A. Orszag, B. Bradie, and M. Peckerar. "Modeling process latitude in UV projection lithography." IEEE Electron Device Letters 12, no. 10 (1991): 513–14. http://dx.doi.org/10.1109/55.119174.

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Zhou, Zai Fa, Qin Gan Huang, and Wei Hua Li. "Models and Simulations of the UV Lithography Process Based on Thick Photoresists." Advanced Materials Research 201-203 (February 2011): 75–79. http://dx.doi.org/10.4028/www.scientific.net/amr.201-203.75.

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This paper presents the models for the ultraviolet (UV) lithography of thick photoresists such as thick SU-8. Simulations for various lithography conditions have been conducted using these models based on the improved dynamical cellular automata method. Some experiments on SU-8 2075 layers under UV source with 365nm wavelength have been implemented to verify the simulation results. The results confirm the validity of the proposed models.
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Lee, Jae Jong, Seung Woo Lee, Hyun Taek Cho, Gee Hong Kim, and Kee Bong Choi. "Single-Step UV Nanoimprinting Lithography with Multi-Head Imprinting System and Its Applications." Key Engineering Materials 326-328 (December 2006): 441–44. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.441.

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The contact-based nanoimprinting lithography (NIL), such as thermal and/or UV nano-imprint, has been well known as one of the next generation lithography alternatives. Especially, the UV nanoimprinting lithography technology has the advantages in terms of process simplicity, low cost, high replication fidelity, and relatively high throughput. The UV nanoimprinting lithography tool is built with the characteristic functions like a self-alignment wafer stage, a nanoimprinting head unit, an alignment system for multi-layer process, stamp/wafer chucking units, releasing unit, and anti-vibration un
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Rothschild, M., T. M. Bloomstein, N. Efremow, et al. "Nanopatterning with UV Optical Lithography." MRS Bulletin 30, no. 12 (2005): 942–46. http://dx.doi.org/10.1557/mrs2005.247.

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AbstractOptical lithography at ultraviolet (UV) wavelengths is the standard process for patterning 90-nm state-of-the-art devices in the semiconductor industry, and extensions to 45 nm and below are currently being explored. With such high resolution, the inherent high throughput of optical lithography will enable the development of a broad range of applications beyond semiconductor electronics. In this article, we will review progress toward nanopatterning with UV light in a variety of materials and geometries.The common thread is the use of short wavelengths, 193 nm or 157 nm, coupled with i
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Chen, Jian Gang, Li Jun Liu, Zhi Xin Zhao, and Ju Rong Liu. "Research and Development of Nanoimprint Lithography Technology." Applied Mechanics and Materials 757 (April 2015): 99–103. http://dx.doi.org/10.4028/www.scientific.net/amm.757.99.

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This paper introduces research situation and prospect of nanoimprint lithography technology. The process of three common lithography (Such as hot press printing, UV curing stamping and Micro Contact stamping) is discussed. For getting better quality, the method and main factors of nanoimprint lithography pattern are analyzed. Furthermore, some key problems of the nanoimprint lithography process are solved for the purpose of the further understands for this process. A new way of thinking is provided for development new nanoimprint lithography technology in the paper.
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Yoshida, Yasuhiro, Hirofumi Fujioka, Hiroyuki Nakajima, Shinji Kishimura, and Hitoshi Nagata. "Surface imaging process using germylation for deep UV lithography." Journal of Photopolymer Science and Technology 4, no. 3 (1991): 497–507. http://dx.doi.org/10.2494/photopolymer.4.497.

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Barnes, Gregg A., Tony D. Flaim, Susan K. Jones, et al. "Anti-reflective coating for deep UV lithography process enhancement." Polymer Engineering and Science 32, no. 21 (1992): 1578–82. http://dx.doi.org/10.1002/pen.760322106.

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Pierrat, C., S. Tedesco, F. Vinet, et al. "PRIME process for deep UV and E-beam lithography." Microelectronic Engineering 11, no. 1-4 (1990): 507–14. http://dx.doi.org/10.1016/0167-9317(90)90160-u.

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Dissertations / Theses on the topic "UV Lithography process"

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Kortikar, Sarang Narayan. "FABRICATION AND CHARACTERIZATION OF DETERMINISTIC MICROASPERITIES ON THRUST SURFACES." UKnowledge, 2004. http://uknowledge.uky.edu/gradschool_theses/334.

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The deterministic microasperities play a vital role in reducing the coefficient of friction and wear of thrust surfaces and improve the tribological properties of the surfaces. Deterministic microasperities have a specific pattern in terms of size, shape and spacing. These specified geometries are controllable and repeatable. The microasperities are micron scaled asperities and cavities on a surface that form the surface roughness. The present thesis shows the detailed process to fabricate the deterministic microasperities on thrust surfaces, i.e. stainless substrate, using micro-fabrication p
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Ciprelli, Jean-Louis. "Application de polymères conducteurs en microlithographie : évaluation de polythiophènes comme résines négatives électrosensibles pour la réalisation de masques à décalage de phase." Université Joseph Fourier (Grenoble ; 1971-2015), 1995. http://www.theses.fr/1995GRE10217.

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L'utilisation de masques a decalage de phase (mdp) en lithographie uv profonds semble indispensable pour l'obtention d'une resolution de 0. 1 micron, pour les generations futures de circuits integres. La mise au point de procedes de fabrication simplifies de masques apparait desormais comme un enjeu technologique important. Les mdp sont principalement realises par ecriture directe sous faisceau d'electrons. La limitation principale de cette lithographie est l'alteration de la precision d'ecriture du faisceau electronique. En effet, l'accumulation de charges a la surface de la resine electrosen
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KAOU, LARBI NEILA. "Conception et realisation d'un dispositif en silicium permettant une connexion passive entre un circuit d'optique integree et un ruban de fibres optiques." Besançon, 1999. http://www.theses.fr/1999BESA2045.

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Dans cette these nous presentons un nouveau systeme d'alignement 3d passif entre un circuit d'optique integree et un ruban de fibres optiques. Le dispositif developpe consiste a reporter les fibres et le composant sur une plate-forme commune en silicium. Les fibres sont positionnees avec une grande precision dans des sillons en v, obtenus par gravure chimique anisotrope du silicium. L'alignement est obtenu grace a l'insertion de plots en forme de champignons realises sur le composant, dans des ouvertures correspondantes ayant des geometries specifiques, et qui sont obtenues par gravure ionique
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Fu, Chi-Chun, and 傅啟俊. "Process Development on UV Nanoimprint Lithography." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/52269981047803162444.

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碩士<br>國立清華大學<br>電子工程研究所<br>95<br>As progress of IC fabrication technology, the device size was scaling down gradually. According to the prediction of ITRS (International Technology Roadmap for Semiconductors Conference) of 2006, lithography technologies below 32nm includes EUV, innovative 193nm immersion with water, imprint and ML2 methods. The imprint lithography technology has simple process, low cost, and high throughput and has potential in IC process. The key points of UV nanoimprint lithograph include mold fabrication, material of photoresist, process of imprinting and etching. Firs
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Lu, Chen-wei, and 陸震偉. "Process Latitude Optimization for 248nm Deep-UV Lithography." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/68100990726491301697.

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碩士<br>國立交通大學<br>應用化學研究所<br>85<br>Design of experiment (DOE) has several merits when applied to microlithography. The most important merit is that it could increase the process latitude by changing current parameters and process settings without increasing extra cost. Using two level DOE and multi-quality characteristic could efficiently analyze the influence of the controllable factors on the critical dimension of resist in microlithographic process, and obtain one set of the most suitable process parameters. In this thesis, the Taguchi Genichi methodology of experimental
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Book chapters on the topic "UV Lithography process"

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"UV Nanoimprint Lithography Process Simulation." In Nanoimprinting and Its Applications, edited by Yoshihiko Hirai. Jenny Stanford Publishing, 2019. http://dx.doi.org/10.1201/9780429031922-7.

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Jiang, K., C. H. Lee, and P. Jin. "An ultrathick SU-8 UV lithographic process and sidewall characterization." In 4M 2006 - Second International Conference on Multi-Material Micro Manufacture. Elsevier, 2006. http://dx.doi.org/10.1016/b978-008045263-0/50049-0.

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Conference papers on the topic "UV Lithography process"

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Zhong, Yinsheng, and Matthew M. F. Yuen. "Hard mold UV nanoimprint lithography process." In 2012 14th International Conference on Electronic Materials and Packaging (EMAP). IEEE, 2012. http://dx.doi.org/10.1109/emap.2012.6507892.

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Taniguchi, Jun, Shin-ichi Satake, Noriyuki Unno, and Takahiro Kanai. "Observation of UV Nanoimprint Lithography Process by Micro-Digitalholographic-PTV." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89220.

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UV nanoimprint lithography (UV-NIL) is powerful tool of nano-fabrication. This process is simple and quickly pattern transfer method because of room temperature process. Now, in this process sometimes generates the errors about shortage of filling or volume shrinking by photo-curable process. Therefore, observation of UV photo-curable resin behaviors at curing process is important. To observe this phenomenon, micro digital-holographic particle-tracking velocimetry (micro-DHPTV) method was used. This measurement method has sub-micron three dimensional spatial resolutions and high time-resolutio
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He, Qizhi, Wei W. Lee, Maureen A. Hanratty, et al. "Inorganic antireflective coating process for deep-UV lithography." In 23rd Annual International Symposium on Microlithography, edited by Luc Van den Hove. SPIE, 1998. http://dx.doi.org/10.1117/12.310763.

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Fung, Allen C., Binder K. Mann, Ronald J. Eakin, et al. "Top antireflective coating process for deep-UV lithography." In Microlithography '99, edited by Will Conley. SPIE, 1999. http://dx.doi.org/10.1117/12.350147.

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Endo, Masayuki, Takahiro Matsuo, Kazuhiko Hashimoto, Masaru Sasago, and Noboru Nomura. "Quarter-micron deep-UV lithography with silylation process." In Micro - DL Tentative, edited by Anthony E. Novembre. SPIE, 1992. http://dx.doi.org/10.1117/12.59766.

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Voisin, P., T. Levender, M. Zelsmann, C. Gourgon, and J. Boussey. "Evaluation of an alternative UV-NIL mold fabrication process." In European Mask and Lithography Conf 2007. SPIE, 2007. http://dx.doi.org/10.1117/12.736537.

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Jeong, Jun-ho, Sohee Jeon, Jongyoup Shim, et al. "Etch-less UV-NIL process for patterning photonic crystal structure onto OLED substrate." In SPIE Advanced Lithography, edited by Frank M. Schellenberg. SPIE, 2008. http://dx.doi.org/10.1117/12.773301.

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Yoneda, Ikuo, Yasutada Nakagawa, Shinji Mikami, et al. "A study of filling process for UV nanoimprint lithography using a fluid simulation." In SPIE Advanced Lithography, edited by Frank M. Schellenberg and Bruno M. La Fontaine. SPIE, 2009. http://dx.doi.org/10.1117/12.813654.

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Choi, Jin, S. V. Sreenivasan, and Doug Resnick. "UV Nano-Imprint Lithography for Manufacturing Applications." In ASME 2007 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/detc2007-35527.

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Researchers have demonstrated that imprint lithography techniques have remarkable replication resolution and can pattern sub-5nm structures. However, a fully capable lithography approach needs to address several challenges in order to be useful in nano-manufacturing applications. This paper presents the key technical challenges as well as the progress achieved to-date in these areas. A promising nanoimprint technique that has been previously discussed in the literature is a UV curing technique known as Step and Flash Imprint Lithography (S-FIL). In this article, a variant of the S-FIL process
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Takei, Satoshi, Yusuke Horiguchi, Tetsuya Shinjo, et al. "Novel approach of UV cross-link process for advanced planarization technology in 32-45 nm lithography." In Advanced Lithography, edited by Qinghuang Lin. SPIE, 2007. http://dx.doi.org/10.1117/12.711362.

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