Relevant bibliographies by topics / UV photodetector

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'UV photodetector'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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Journal articles on the topic "UV photodetector"

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Xie, Haowei, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, and Yu-Jia Zeng. "Ferroelectric Tuning of ZnO Ultraviolet Photodetectors." Nanomaterials 12, no. 19 (September 27, 2022): 3358. http://dx.doi.org/10.3390/nano12193358.

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The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.
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Kaawash, N. M. S., D. I. Halge, V. N. Narwade, J. W. Dadge, and K. A. Bogle. "Fabrication of Near Ultraviolet Photodetector using α-Fe2O3 Thin FilmSynthesized via Spray Coating Technique." Journal of Physics: Conference Series 2426, no. 1 (February 1, 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2426/1/012011.

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Abstract A UV photodetector was created using a spray-deposited α-Fe2O3 thin film on a glass substrate at 160 °C. The film’s thickness was approximately 110 nm. With a near UV light at a wavelength of 340 nm and an intensity of 140 µW/cm2, the photosensitivity of an individual α-Fe2O3 thin film photodetector was greater than 40%. An individual α-Fe2O3 thin film-based photodetector’s rapid photoresponse time of 1.6 ms and responsivity of ~ 1 mA/W can be attributed to the band gap and chemisorption of oxygen on the film’s surface. The photodetectors’ simple, low-cost, and large-scale fabrication demonstrates the fabrication of a stable, reversible, and rapid photo-responsive photodetector for near UV wavelength.
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Fan, Ming-Ming, Kang-Li Xu, Ling Cao, and Xiu-Yan Li. "Fast-speed self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection." Chinese Physics B 31, no. 4 (March 1, 2022): 048501. http://dx.doi.org/10.1088/1674-1056/ac3814.

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The α-Ga2O3 nanorod array is grown on FTO by hydrothermal and annealing processes. And a self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO (PGF) photodetector has been demonstrated by spin coating PEDOT:PSS on the α-Ga2O3 nanorod array. Successfully, the PGF photodetector shows solar-blind UV/visible dual-band photodetection. Our device possesses comparable solar-blind UV responsivity (0.18 mA/W at 235 nm) and much faster response speed (0.102 s) than most of the reported self-powered α-Ga2O3 nanorod array solar-blind UV photodetectors. And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm. The response time is also much faster than the other non-self-powered β-Ga2O3 DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga2O3 heterojunction. The results herein may prove a promising way to realize fast-speed self-powered α-Ga2O3 photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking, imaging, machine vision and communication.
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Yan, Xu, Xueqiang Ji, Jinjin Wang, Chao Lu, Zuyong Yan, Shengrun Hu, Sai Zhang, and Peigang Li. "Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer." Journal of Vacuum Science & Technology B 40, no. 5 (September 2022): 052207. http://dx.doi.org/10.1116/5.0107495.

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In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga2O3 and p-Si/SiO2/n-Ga2O3 heterojunctions were fabricated by metalorganic chemical vapor deposition, respectively. Benefitting from the electron-blocking ability of SiO2 dielectric layer insertion, p-Si/SiO2/n-Ga2O3 photodetectors exhibit a very low dark current of 1.14 × 10−12 A, which is 4 orders of magnitude lower than p-Si/Ga2O3 photodetectors (3.22 × 10−8 A). At the same time, a high photo-to-dark current ratio (1.81 × 105) of p-Si/SiO2/n-Ga2O3 photodetectors was obtained under UV light (λ = 254 nm) at −15 V. Meanwhile, the p-Si/SiO2/n-Ga2O3 devices express better photodetection performance, in which the responsivity and EQE are about two times more than that of p-Si/Ga2O3 photodetectors. Furthermore, the photodetector was found to possess impressive photodetection stabilities. Our results indicate that the p-Si/SiO2/n-Ga2O3 photodetector is an excellent candidate for high-sensitivity, ultrafast response solar-blind UV light detection.
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Jiang, Guohua, Dongmei Zhao, and Bo Zhao. "ZnO nanowire UV photodetector with multiple channels." Microelectronics International 35, no. 1 (January 2, 2018): 18–23. http://dx.doi.org/10.1108/mi-10-2016-0068.

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Purpose The purpose of this paper is to investigate the optoelectronic properties of the multichannel ZnO UV photodetectors. Design/methodology/approach ZnO nanowires were assembled by dielectrophoresis for the UV photodetectors. Different ZnO channels were adjusted by different alternating current voltages and investigated for UV optoelectronic properties. Findings The number of the ZnO channels increases with the enhancing alternating current voltage. Optimum performance of the UV photodetectors is obtained with more channels. Originality/value Dielectrophoresis is a promising method for controllable assembly of multichannel ZnO photodetectors. ZnO photodetectors with more channels demonstrate a good response to 380-nm UV light, which shows great potential application in UV photodetector.
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Wu, Chao, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, and Fengmin Wu. "Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3." Journal of Semiconductors 44, no. 7 (July 1, 2023): 072807. http://dx.doi.org/10.1088/1674-4926/44/7/072807.

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Abstract Gallium oxide (Ga2O3) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga2O3 could potentially improve the lifetime of the flexible photodetectors while maintaining their performance. Herein, a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate, which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT: PSS/Ga2O3 heterojunction. The self-healing of the Ga2O3 based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network, which allows the photodetector to recover its original configuration and function after damage. After self-healing, the photocurrent of the photodetector decreases from 1.23 to 1.21 μA, while the dark current rises from 0.95 to 0.97 μA, with a barely unchanged of photoresponse speed. Such a remarkable recovery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.
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Shang, Guoxin, Libin Tang, Gang Wu, Shouzhang Yuan, Menghan Jia, Xiaopeng Guo, Xin Zheng, Wei Wang, Biao Yue, and Kar Seng Teng. "High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector." Sensors 23, no. 5 (March 2, 2023): 2741. http://dx.doi.org/10.3390/s23052741.

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The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications.
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Fong, Chee Yong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, and Zainuriah Hassan. "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection." Microelectronics International 36, no. 1 (January 7, 2019): 8–13. http://dx.doi.org/10.1108/mi-12-2017-0074.

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Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.
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Liu, Geng, Liang Yao, Ying Liu, Rongdun Hong, Ruijun Zhang, and Feng Zhang. "Study on SiC UV/EUV Coaxial Photodetector." Journal of Physics: Conference Series 2549, no. 1 (July 1, 2023): 012014. http://dx.doi.org/10.1088/1742-6596/2549/1/012014.

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Abstract In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.
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Teker, Kasif. "Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector." Journal of Nano Research 60 (November 2019): 86–93. http://dx.doi.org/10.4028/www.scientific.net/jnanor.60.86.

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High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.
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Dissertations / Theses on the topic "UV photodetector"

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Goulty, Duncan N. O. "Photodetector calibration for solar SXR and UV dose measurement for correlation with materials degradation on the international space station." Thesis, University of Southampton, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438511.

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Bueno, Hernandez Diana. "Optical and electrochemical sensing methods for the detection of food contaminants." Thesis, Perpignan, 2016. http://www.theses.fr/2016PERP0044/document.

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Un appareil de mesure de la fluorescence, à faible coût et portable a été développé pour quantifier les concentrations d’Ochratoxine A (OTA) dans des échantillons réels. Le système est basé sur l’excitation par une UV-LED à 365 nm et un photo détecteur contrôlé par une interface dans LabVIEW. Aussi, une image capteur, CMOS, contrôlée par une interface conçue dans MATLAB. L’OTA est une molécule naturellement fluorescente. Après excitation par une UV-, l’image de la fluorescence émise est captée par une caméra et traitée en vue de la mesure de la concentration de l’OTA. Le système d’analyse a été basé sur les 3 composants rouge, vert et bleu (RGB, selon l'acronyme anglais). La gamme est linéaire entre de 2-40 µg/L. L’extraction de l’OTA est réalisée par des colonnes d'immuno affinité (IAC, selon l'acronymeanglais) et les colonnes à empreinte moléculaire (MIP, selon l'acronyme anglais) pour les échantillons de cacao, de la bière et du vin. Les résultats obtenus ont été validés par la méthode chromatographique (HPLC). L'appareil conçu est facile à utiliser, économique et portable. En outre, l'utilisation des nouvelles technologies a été inclus tels que l'emploi du smartphone pour détecter l'OTA et la création d'un APP. Des données d'image de fluorescence provenant de la caméra du smartphone et sont analysées par un ordinateur personnel et présentés dans les composantes RGB, où l'image est envoyée à l'ordinateur par WIFI et le téléphone intelligent est utilisé comme source d'énergie trop. Enfin, une APP pour le système Android a été créé pour capturer l'image et fournit les valeurs RGB. Enfin l'utilisation du traitement de l'image a été utilisée pour quantifier l'OTA dans les échantillons réels sans colonnes IAC ou MIP, employée pour extraire la mycotoxine. L’analyse a été réalisée par des techniques colorimétriques et d’analyse de la couleur
A portable and low cost fluorescence set-up to quantify the concentrations of Ochratoxin A(OTA) in real samples was developed. The detection through the device consist of anultraviolet light at 365 nm and an photo detector or a CMOS sensor controlled by anexecutable interface designed in LabVIEW or MATLAB. It has been reported that OTA is naturally fluorescent, so it allows the user to get a UV LED to excite the sample, get a value involtage when a photodetector is employed or a photograph of the OTA under excitationconditions, and process that image in order to predict the concentrations of the sample. Tocapture and process the image, in an automatically manner, the system was completely basedon the Red, Green and Blue (RGB) components. The linearity for OTA obtained in the rangeof concentrations corresponds to 2-40 µg/L. Immunoaffinity columns (IAC) and molecularimprinted polymer columns (MIP) were used with cocoa, beer and wine samples. Theobtained results were cross-validated using chromatographic method such as HPLC and theFluoroskan equipment. The developed setup is easy to use, economical and portable. Besides,the use of new tendencies was included such as employ the smartphone to detect OTA and thecreation of an APP. Fluorescence image data from the smartphone camera are analyzed by apersonal computer and presented in RGB components, where the image is sent to thecomputer by WIFI and the smartphone is used as a power source too. Finally, an APP forandroid system was created to capture the image and provides the RGB values. At the end, theuse of image processing to quantify the OTA in real samples without incorporated IAC or MIPcolumns to extract the mycotoxin from a complex solution, employing colorimetric techniquesand color analysis
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Cheak, Seck Fai. "Detecting near-UV and near-IR wavelengths with the FOVEON Image Sensor /." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FCheak.pdf.

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Thesis (M.S. in Combat Systems Technology)--Naval Postgraduate School, Dec. 2004.
Thesis Advisor(s): Gamani Karunasiri, Richard C. Olsen. Includes bibliographical references (p. 57-60). Also available online.
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Amor, Sarrah. "Étude des défauts dans les alliages de semi-conducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport : application aux photo-détecteurs U." Thesis, Université de Lorraine, 2017. http://www.theses.fr/2017LORR0286/document.

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Le nitrure de gallium (GaN) et ses alliages ternaires et quaternaires suscitent de plus en plus d’intérêt dans les communautés scientifiques et industrielles pour leur potentiel d’utilisation dans des dispositifs électroniques haute fréquence, dans les transistors à forte mobilité électroniques, dans la photo-détection UV et les cellules solaires de nouvelles générations. L’aboutissement de ces nouveaux composants reste entravé à l’heure actuelle, entre autre, par la non maîtrise des techniques d’établissement de contacts électriques. C’est dans ce cadre général que s’inscrivent les travaux de cette thèse. Même si l’objectif principal de cette thèse concerne l’étude des défauts électriquement actifs dans les alliages de semiconducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport, la réalisation des contacts ohmiques et des contacts Schottky constitue une étape essentielle dans la réalisation des dispositifs à étudier. Pour les contacts ohmiques, nous avons déposé des couches de type Ti/Al/Ti/Au (15/200/15/200) par évaporation thermique. Des résistances spécifiques des contacts de l’ordre de 3x10-4Wcm2 ont été déterminées par les méthodes des TLM linéaires et confirmées par les TLM circulaires. Une modélisation théorique a été entreprise dans ce sens pour analyser les mesures expérimentales. Ensuite on a réalisé des diodes Schottky en déposant des contacts métalliques de Platine (Pt) d’épaisseur 150 nm. Des facteurs d’idéalité de 1.3 et une hauteur de barrière de 0.76 eV ont été obtenus et d’une manière reproductible. Une fois ces dispositifs réalisés, une étude des mécanismes de transport a été entreprise et nous a permis de mettre en évidence l’existence des effets tunnel direct et assisté par le champ, en plus de l’effet thermoïonique classique. Ceci a été mis en évidence par des mesures de courant et de capacité en fonction de la température. Pour les photodétecteurs, nous avons réalisés les mêmes mesures de courant et de capacité à l’obscurité et sous illumination à des longueurs d’ondes adaptées. Ces mesures nous ont permis de comprendre les phénomènes de gain qu’on a observés sur ces échantillons et aussi de mettre en évidence des mécanismes thermiquement actifs, dont les énergies d’activation ont été déterminées par la technique de l’Arrhenius. L’étude des défauts électriquement actifs a été menée par la technique transitoire de capacité de niveaux profonds, la (DLTS). Cette technique a été récemment mise en oeuvre au laboratoire et nous a permis d’effectuer des mesures sous différentes conditions incluant diverses polarisations de repos, différentes fréquences, et différentes hauteurs et largeurs d’impulsion de polarisation. Un des résultats importants est la possibilité de caractérisation à la fois des pièges à majoritaires et des pièges à minoritaire en changeant simplement les conditions de polarisation et contrairement aux procédures habituelles où une excitation optique supplémentaire est souvent nécessaire pour augmenter la concentration des porteurs minoritaires. Il a ainsi été mis en évidence, en accord avec la plupart des résultats de la littérature, l’existence de 6 pièges à électrons, tous situés en dessous de 0.9 eV de la bande de conduction, de trois pièges à trous dans l’intervalle 0.6 - 0 .7 eV au dessus de la bande de valence et un piège à trous distribué à l’interface. Une procédure rigoureuse de fit a été mise au point et a permis de confirmer nos résultats obtenus par la procédure classique de l’Arrhenius
Gallium nitride (GaN) and its ternary and quaternary alloys are attracting more and more interest in the scientific and industrial communities for their potential for use in high frequency electronic devices, for transistors with high electronic mobility, for UV photo-detection and new-generation solar cells. The outcome of these new components is still be seen to be limited in many areas, mainly due to the lack of control of electrical contacts implementation techniques. It is in this context that this thesis takes place.Although the main objective of this thesis deals with the study of the electrically active defects in high band gap B(AlGa)N semiconductor alloys and their role in the transport properties, the production of ohmic and Schottky contacts is an essential step in the realization of the devices under study. For the Ohmic contacts, we have deposited Ti/Al/Ti/Au (15/200/15/200) layers by thermal evaporation. Using the Transfer Length Method (TLM), we obtained specific contact resistances in the order of 3x10-4Wcm2. The Circular TLM has also confirmed this result. Besides, a theoretical modelling has been carried out to analyse the experimental measurements. Schottky diodes were then produced by depositing 150 nm platinum (Pt) metal contacts. An ideality factor of 1.3 and a barrier height of 0.76 eV were obtained. On the other hand, a study of transport mechanisms has been performed. It allowed us to demonstrate the existence of the direct tunnelling and the Thermionic Field Emission, in addition to the conventional thermionic effect. This result was underpinned by current and capacity measurements as a function of temperature. For photo detectors, we performed the same measurements of current and capacity in darkness and under illumination at suitable wavelengths. These measurements allowed understanding the internal gain that was observed on the samples. Furthermore, they show the effect of the thermally active mechanisms whose activation energies were determined by the Arrhenius technique. Using the Deep-Level Transient Spectroscopy (DLTS) technique followed up the study of the electrically active defects. This technique has recently been implemented in the laboratory. It allowed us to perform measurements under different conditions including various reverse bias, different frequencies, and different voltage pulse amplitudes and durations. One of the important results is the possibility of characterizing both majority and minority traps by simply changing the polarization conditions, as opposed to the usual procedures where an additional optical excitation is often necessary to increase the concentration of the minority carriers. In accordance with most of the encountered literature results, we found 6 electron traps all located below 0.9 eV of the conduction band, 3 hole traps in the 0.6-0.7 eV range above the valence band and one hole trap distributed at the interface. A rigorous procedure was developed and confirmed our results obtained by the standard Arrhenius technique
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Biondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.

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Le SiC est un matériau semi-conducteur à large bande d'énergie interdite dont les très bonnes caractéristiques électriques et thermiques en font un candidat idéal pour la fabrication de composants dans le domaine de la puissance et des détecteurs de rayonnement. En particulier, la réalisation de détecteurs UV est très attendue dans les domaines suivants : détection d'incendies, imagerie de surface, astronomie, médecine, militaire… Les photodétecteurs à base de semiconducteurs à large bande interdite permettent d'obtenir une très bonne sélectivité dans l'UV, sans avoir à utiliser de filtres optiques. Le SiC semble être le matériau le plus prometteur, grâce à sa bonne stabilité chimique, mécanique et thermique, ce qui représente un avantage pour opérer en environnement extrême. Cependant le dopage du SiC nécessite un savoir-faire très particulier (implantation à chaud, recuit à haute température, forte dynamique de chauffe…). Nous nous sommes proposés dans un premier temps de réaliser par implantation (ionique et plasma) des composants tests, permettant d'accéder aux caractéristiques des jonctions. Le cas des jonctions implantées n+p et p+n a été étudié. Après l'optimisation des paramètres technologiques de l'implantation et du recuit associé, la fabrication de détecteurs de rayonnement basés sur la diode Schottky ou la diode p.n a été mise en œuvre. Une étape de simulation de ces composants a été effectuée sur le logiciel Sentaurus Device (Synopsys). Les caractérisations de ces détecteurs ont montré une meilleure sensibilité pour les diodes implantées Bore par plasma
Silicon carbide is a wide band-gap semiconductor with electrical and thermal characteristics particularly suitable for high power devices and radiation sensors. The realisation of UV detectors is mainly useful in the following sectors: fire detection, surface imagery, astronomy, medicine, military... The photodetectors based on wide band-gap semiconductors allow to get a very good selectivity, without using optical filters. Silicon carbide seems to be the most promising material, due to its chemical, mechanical and thermal stability, inducing a reliable behaviour in extreme environment. However SiC doping requires a distinct know-how (hot ion implantation, high temperature annealing, rapid heating-rate…). Test devices have been firstly processed by using ion implantation and plasma, allowing evaluating p+n or n+p junction characteristics. After the optimisation of the technological parameters of implantation and related annealing, the realisation of radiation detectors based on Schottky or p.n diodes has been carried out. The electrical simulations of such devices were performed with Sentaurus Devices program (Synopsys). The characteristics of the devices proved an improvement with the Boron-plasma implantation
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Cossuet, Thomas. "Problématique de la polarité dans les nanofils de ZnO localisés, et hétérostructures reliées pour l’opto-électronique." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAI086/document.

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Le développement d’architectures nanostructurées originales composées de matériaux abondants et non-toxiques fait l’objet d’un fort intérêt de la communauté scientifique pour la fabrication de dispositifs fonctionnels efficaces et à bas coût suivant des méthodes d’élaborations faciles à mettre en œuvre. Les réseaux de nanofils de ZnO élaborés par dépôt en bain chimique sont, à ce titre, extrêmement prometteurs. L’étude des propriétés de ces réseaux de nanofils et leur intégration efficace au sein de dispositifs nécessitent toutefois un contrôle avancé de leurs propriétés structurales et physiques, notamment en terme de polarité, à l’aide de techniques de lithographies avancées.Le dépôt en bain chimique des nanofils de ZnO est d’abord effectué sur des monocristaux de ZnO de polarité O et Zn préparés par lithographie assistée par faisceau d’électrons. Par cette approche de croissance localisée, un effet significatif de la polarité des nanofils de ZnO est mis en évidence sur le mécanisme de croissance des nanofils, ainsi que sur leurs propriétés électriques et optiques. La possibilité de former des nanofils de ZnO sur des monocristaux de ZnO semipolaires nous a de plus permis d’affiner la compréhension de leurs mécanismes de croissance sur les couches d’amorces polycristallines de ZnO. Par la suite, le dépôt des nanofils de ZnO en bain chimique est développé sur des couches d’amorces polycristallines de ZnO préparés à l’aide de la lithographie assistée par nano-impression. Suivant cette approche, des réseaux de nanofils de ZnO localisés sont formées sur de grandes surfaces, ce qui permet d’envisager leur intégration future au sein de dispositifs fonctionnels.Les nanofils de ZnO sont ensuite combinés avec des coquilles semiconductrices de type p par des méthodes de dépôt chimique en phase liquide ou en phase vapeur afin de fabriquer des hétérostructures cœurs-coquilles originales. Le dépôt de couches successives par adsorption et réaction (SILAR) d’une coquille absorbante de SnS de phase cubique est optimisé sur des nanofils de ZnO recouverts d’une fine couche protectrice de TiO2, ouvrant la voie à la fabrication de cellules solaires à absorbeur extrêmement mince. Enfin, un photo-détecteur UV autoalimenté prometteur, présentant d’excellentes performances en termes de réponse spectrale et de temps de réponse, est réalisé par le dépôt chimique en phase vapeur d’une coquille de CuCrO2 sur les nanofils de ZnO
Over the past decade, the development of novel nanostructured architectures has raised increasing interest within the scientific community in order to meet the demand for low-cost and efficient functional devices composed of abundant and non-toxic materials. A promising path is to use ZnO nanowires grown by chemical bath deposition as building blocks for these next generation functional devices. However, the precise control of the ZnO nanowires structural uniformity and the investigation of their physical properties, particularly in terms of polarity, remain key technological challenges for their efficient integration into functional devices.During this PhD, the chemical bath deposition of ZnO nanowires is combined with electron beam lithography prepared ZnO single crystal substrates of O- and Zn-polarity following the selective area growth approach. The significant effects of polarity on the growth mechanism of ZnO nanowires, as well as on their electrical and optical properties, are highlighted by precisely investigating the resulting well-ordered O- and Zn-polar ZnO nanowire arrays. An alternative nano-imprint lithography technique is subsequently used to grow well-ordered ZnO nanowire arrays over large areas on various polycrystalline ZnO seed layers, thus paving the way for their future integration into devices. We also demonstrate the possibility to form ZnO nanowires by chemical bath deposition on original semipolar ZnO single crystal substrates. These findings allowed a comprehensive understanding of the nucleation and growth mechanisms of ZnO nanowires on polycrystalline ZnO seed layers.In a device perspective, the ZnO nanowires are subsequently combined with p type semiconducting shells by liquid and vapor chemical deposition techniques to form original core-shell heterostructures. The formation of a cubic phase SnS absorbing shell is optimized by the successive ionic layer adsorption and reaction (SILAR) process on ZnO nanowire arrays coated with a thin protective TiO2 shell, which pave the way for their integration into extremely thin absorber solar cells. A self-powered UV photo-detector with fast response and state of the art performances is also achieved by the chemical vapor deposition of a CuCrO2 shell on ZnO nanowire arrays
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Östlund, Ludwig. "Fabrication and Characterization of Micro and Nano Scale SiC UV Photodetectors." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52911.

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The focus of this master thesis work is on the fabrication of micro- and nano-scale metalsemiconductor-metal silicon carbide (SiC) UV photodetectors and subsequent electrical and optical evaluation of the fabricated devices. The UV photodetectors have significant potential to address the needs of many applications such as detection of corona discharge and flames, industrial machine viewing, and bacteria in water or paper mills. Micro-scale devices in 4H-SiC and 6H-SiC have been fabricated successfully with good photoresponse and low dark current. Reduction in size of the 4H-SiC UV detectors from micro-scale to nano-scale has been achieved by the use of nano imprint lithography (NIL). The performance of these nano-devices have been characterized, and experiment results reveal good photo sensitivity at very low applied biases.
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Pereira, Fábio André Barbosa. "Study and development of UV photodetectors envisaging COMPASS RICH-1 upgrade and applications." Doctoral thesis, Universidade de Aveiro, 2016. http://hdl.handle.net/10773/15910.

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Doutoramento em Engenharia Física
COMPASS is an experiment at CERN’s SPS whose goal is to study hadron structure and spectroscopy. The experiment includes a wide acceptance RICH detector, operating since 2001 and subject to a major upgrade of the central region of its photodetectors in 2006. The remaining 75% of the photodetection area are still using MWPCs from the original design, who suffer from limitations in gain due to aging of the photocathodes from ion bombardment and due to ion-induced instabilities. Besides the mentioned limitations, the increased luminosity conditions expected for the upcoming years of the experiment make an upgrade to the remaining detectors pertinent. This upgrade should be accomplished in 2016, using hybrid detectors composed of ThGEMs and MICROMEGAS. This work presents the study, development and characterization of gaseous photon detectors envisaging the foreseen upgrade, and the progress in production and evaluation techniques necessary to reach increasingly larger area detectors with the performances required. It includes reports on the studies performed under particle beam environment of such detectors. MPGD structures can also be used in a variety of other applications, of which nuclear medical imaging is a notorious example. This work includes, additionally, the initial steps in simulating, assembling and characterizing a prototype of a gaseous detector for application as a Compton Camera.
O COMPASS é uma experiência no SPS do CERN cujo objectivo é estudar a espectroscopia hadrónica e a estrutura dos nucleões. A experiência inclui um detector RICH de larga aceitação, operacional desde 2001 e sujeito a um upgrade de parte dos seus fotodetectores em 2006. Os restantes 75% da área de fotodetecção ainda utilizam as MWPCs do desenho original, que sofrem de limitações de ganho devido ao envelhecimento dos fotocátodos pelo bombardeamento com iões e a instabilidades por eles induzidas. Além destas limitações, o aumento de luminosidade expectável nos próximos anos para a experiência tornam o upgrade dos restantes fotodetectores desejável. Este upgrade deverá acontecer em 2016 e deverá fazer uso de detectores híbridos compostos por ThGEMs e MICROMEGAS. Este trabalho apresenta o estudo, desenvolvimento e caracterização de fotodetectores gasosos com vista ao upgrade referido, e o progresso na produção e nas técnicas de avaliação necessário para alcançar as maiores áreas de detecção com os desempenhos exigidos. Inclui também a descrição e tratamento de exercícios com irradiação por feixe de partículas dos detectores em causa. Os MPGDs podem também ser usados em várias outras aplicações, entre as quais se destaca a imagiologia médica nuclear. Este trabalho inclui, adicionalmente, as etapas iniciais de simulação, montagem e caracterização de um protótipo de detector gasoso para aplicação como Câmara Compton.
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Mallampati, Bhargav. "Development of High Gain Ultraviolet Photo Detectors Based on Zinc Oxide Nanowires." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc500106/.

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Semiconductor nanowires acts as an emerging class of materials with great potential for applications in future electronic devices. Small size, large surface to volume ratio and high carrier mobility of nanowires make them potentially useful for electronic applications with high integration density. In this thesis, the focus was on the growth of high quality ZnO nanowires, fabrication of field effect transistors and UV- photodetectros based on them. Intrinsic nanowire parameters such as carrier concentration, field effect mobility and resistivity were measured by configuring nanowires as field effect transistors. The main contribution of this thesis is the development of a high gain UV photodetector. A single ZnO nanowire functioning as a UV photodetector showed promising results with an extremely high spectral responsivity of 120 kA/W at wavelength of 370 nm. This corresponds to high photoconductive gain of 2150. To the best of our knowledge, this is the highest responsivity and gain reported so far, the previous values being responsivity=40 kA/W and gain=450. The enhanced photoconductive behavior is attributed to the presence of surface states that acts as hole traps which increase the life time of photogenerated electrons raising the photocurrent. This work provides the evidence of such solid states and preliminary results to modify the surface of ZnO nanowire is also produced.
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Chey, Chan Oeurn. "Synthesis of ZnO and transition metals doped ZnO nanostructures, their characterization and sensing applications." Doctoral thesis, Linköpings universitet, Fysik och elektroteknik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-113237.

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Nanotechnology is a technology of the design and the applications of nanoscale materials with their fundamentally new properties and functions. Nanosensor devices based on nanomaterials provide very fast response, low-cost, long-life time, easy to use for unskilled users, and provide high-efficiency. 1-D ZnO nanostructures materials have great potential applications in various sensing applications. ZnO is a wide band gap (3.37 eV at room temperature) semiconductor materials having large exciton binding energy (60 meV) and excellent chemical stability, electrical, optical, piezoelectric and pyroelectric properties. By doping the transition metals (TM) into ZnO matrix, the properties of ZnO nanostructures can be tuned and its room  temperature ferromagnetic behavior can be enhanced, which provide the TM-doped ZnO nanostructures as promising candidate for optoelectronic, spintronics and high performance sensors based devices. The synthesis of ZnO and TM-doped ZnO nanostructures via the low temperature hydrothermal method is considered a promising technique due to low cost, environmental friendly, simple solution process, diverse 1-D ZnO nanostructures can be achieved, and large scale production on any type of substrate, and their properties can be controlled by the growth parameters. However, to synthesize 1-D ZnO and TM-doped ZnO nanostructures with controlled shape, structure and uniform size distribution on large area substrates with desirable properties, low cost and simple processes are of high interest and it is a big challenge at present. The main purpose of this dissertation aims to develop new techniques to synthesize 1-D ZnO and (Fe, Mn)-doped ZnO nanostructures via the hydrothermal method, to characterize and to enhance their functional properties for developing sensing devices such as biosensors for clinical diagnoses and environmental monitoring applications, piezoresistive sensors and UV photodetector. The first part of the dissertation deals with the hydrothermal synthesis of ZnO nanostructures with controlled shape, structure and uniform size distribution under different conditions and their structural characterization. The possible parameters affecting the growth which can alter the morphology, uniformity and properties of the ZnO nanostructures were investigated. Well-aligned ZnO nanorods have been fabricated for high sensitive piezoresistive sensor. The development of creatinine biosensor for clinical diagnoses purpose and the development of glucose biosensor for indirect determination of mercury ions for an inexpensive and unskilled users for environmental monitoring applications with highly sensitive, selective, stable, reproducible, interference resistant, and fast response time have been fabricated based on ZnO nanorods. The second part of the dissertation presents a new hydrothermal synthesis of (Fe, Mn)-doped-ZnO nanostructures under different preparation conditions, their properties characterization and the fabrication of piezoresistive sensors and UV photodetectors based devices were demonstrated. The solution preparation condition and growth parameters that influences on the morphology, structures and properties of the nanostructures were investigated. The fabrication of Mn-doped-ZnO NRs/PEDOT:PSS Schottky diodes used as high performance piezoresistive sensor and UV photodetector have been studied and Fe-doped ZnO NRs/FTO Schottky diode has also been fabricated for high performance of UV photodetector. Finally, a brief outlook into future challenges and relating new opportunities are presented in the last part of the dissertation.
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Book chapters on the topic "UV photodetector"

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Natasha, Adnin Tazrih, Xiaohu Chen, Binesh Puthen Veettil, and Noushin Nasiri. "Wearable Ultraviolet Photodetector for Real Time UV Index Monitoring." In Sensing Technology, 238–50. Cham: Springer Nature Switzerland, 2023. http://dx.doi.org/10.1007/978-3-031-29871-4_24.

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Bhardwaj, Ritesh, Pankaj Sharma, Md Arif Khan, Rohit Singh, and Shaibal Mukherjee. "MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering." In Springer Proceedings in Physics, 981–84. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_149.

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Kutepov, M. E., V. E. Kaydashev, G. Ya Karapetyan, D. A. Zhilin, T. A. Minasyan, A. S. Anokhin, A. V. Chernyshev, et al. "Optimization of Zn1−x−yMgxAlyO Film Properties to Use in Deep UV SAW Photodetector." In Springer Proceedings in Physics, 537–43. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19894-7_41.

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Chuah, Lee Siang, Z. Hassan, and H. Abu Hassan. "Enhanced UV Photodetector Responsivity in Porous GaN/Si(111) by Metal-Assisted Electroless Etching." In Semiconductor Photonics: Nano-Structured Materials and Devices, 39–41. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.39.

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Kumari, Chandni, and Ambesh Dixit. "Light Emitting Diode and UV Photodetector Characteristics of Solution Processed n-ZnO Nanorods/p-Si Heterostructures." In Springer Proceedings in Physics, 1223–29. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_186.

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Yang, Wei. "AlGaN UV Photodetectors." In III-V Nitride Semiconductors, 675–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-14.

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Omnes, Franck, and Eva Monroy. "GaN-Based UV Photodetectors." In Nitride Semiconductors, 627–60. Weinheim, FRG: Wiley-VCH Verlag GmbH & Co. KGaA, 2006. http://dx.doi.org/10.1002/3527607641.ch13.

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Selma, Kaour, and Rechem Djamil. "Effect of Dopant Material on the Performance UV Photodetector Based SnO2 Thin Films Deposited by Sol-Gel Dip-Coating Method." In Proceedings of the Third International Symposium on Materials and Sustainable Development, 197–205. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-89707-3_24.

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Monroy, E., F. Calle, E. Muñoz, and F. Omnès. "III-Nitride-Based UV Photodetectors." In III-V Nitride Semiconductors, 525–91. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9780367813628-12.

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Muñoz, E., J. L. Pau, and C. Rivera. "Nitride Photodetectors in UV Biological Effects Studies." In UV Solid-State Light Emitters and Detectors, 161–77. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/978-1-4020-2103-9_11.

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Conference papers on the topic "UV photodetector"

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Kuzanyan, Astghik, Vahan Nikoghosyan, Armen Kuzanyan, and Sergey Harutyunyan. "Fast thermoelectric photodetector for UV radiation." In Quantum Optics and Photon Counting 2023, edited by Ivan Prochazka and Roman Sobolewski. SPIE, 2023. http://dx.doi.org/10.1117/12.2664550.

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Park, M., Y. Zhou, C. Ahyi, D. Wang, C. C. Tin, J. Williams, N. M. Williams, A. D. Hanser, E. A. Preble, and K. Evans. "Bulk GaN-Based Schottky rectifier and UV photodetector." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422435.

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Luo, Yuanmin, Danhao Wang, Yang Kang, Xin Liu, Shi Fang, and Haiding Sun. "Self-Powered GaN Nanowire-Based Photoelectrochemical Type Photodetector for Wireless UV Photodetection in Seawater." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jw3b.11.

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We fabricated a wireless photo-detecting system consisting of a self-powered PEC PD based on GaN nanowires in an artificial seawater environment. The portable electrochemical workstation with wireless data transmission and cloud storage in this system shows a promising future in photo-detecting and optical communication applications.
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Rostami, A., S. Khosravi, and H. Rasooli Saghai. "A Dual-Band UV and IR Quantum Cascade Photodetector." In Asia Communications and Photonics Conference and Exhibition. Washington, D.C.: OSA, 2011. http://dx.doi.org/10.1364/acp.2011.830816.

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Rostami, A., S. Khosravi, and H. Rasooli Saghai. "A dual-band UV and IR quantum cascade photodetector." In SPIE/OSA/IEEE Asia Communications and Photonics, edited by Guang-Hua Duan. SPIE, 2011. http://dx.doi.org/10.1117/12.904399.

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Alhelfi, Mohanad A., Naser M. Ahmed, M. R. Hashim, Ali Amer Al-Rawi, and Z. Hassan. "Simulation of optimum parameters for GaN MSM UV photodetector." In INTERNATIONAL CONFERENCE ON NANO-ELECTRONIC TECHNOLOGY DEVICES AND MATERIALS 2015 (IC-NET 2015). Author(s), 2016. http://dx.doi.org/10.1063/1.4948846.

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Radoi, A., A. Cismaru, A. Iordanescu, and M. Dragoman. "Graphene ink photodetector for UV-Vis and NIR domain." In 2010 International Semiconductor Conference (CAS 2010). IEEE, 2010. http://dx.doi.org/10.1109/smicnd.2010.5650370.

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Liu, Fengyuan, Nivasan Yogeswaran, Carlos Garcia Nunez, Duncan Gregory, and Ravinder Dahiya. "Graphene-ZnO NWs Film for Large-Area UV Photodetector." In 2018 IEEE Sensors. IEEE, 2018. http://dx.doi.org/10.1109/icsens.2018.8589639.

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Gaitonde, Jaya V., and R. B. Lohani. "UV photodetector based on graphene-GaN Schottky junction in MESFET." In 2016 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2016. http://dx.doi.org/10.1109/icedss.2016.7587797.

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Gaitonde, Jaya V., and R. B. Lohani. "Back-illuminated GaAs OPFET: A High Visible/UV Contrast Photodetector." In 2018 Conference on Emerging Devices and Smart Systems (ICEDSS). IEEE, 2018. http://dx.doi.org/10.1109/icedss.2018.8544284.

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Reports on the topic "UV photodetector"

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Zhang, Yong-Hang. Multicolor (UV-IR) Photodetectors Based on Lattice-Matched 6.1 A II/VI and III/V Semiconductors. Fort Belvoir, VA: Defense Technical Information Center, August 2015. http://dx.doi.org/10.21236/ada622826.

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