Journal articles: 'UV photodetector'

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Xie, Haowei, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, and Yu-Jia Zeng. "Ferroelectric Tuning of ZnO Ultraviolet Photodetectors." Nanomaterials 12, no. 19 (September 27, 2022): 3358. http://dx.doi.org/10.3390/nano12193358.

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The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.

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Kaawash, N. M. S., D. I. Halge, V. N. Narwade, J. W. Dadge, and K. A. Bogle. "Fabrication of Near Ultraviolet Photodetector using α-Fe₂O₃ Thin FilmSynthesized via Spray Coating Technique." Journal of Physics: Conference Series 2426, no. 1 (February 1, 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2426/1/012011.

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Abstract A UV photodetector was created using a spray-deposited α-Fe2O3 thin film on a glass substrate at 160 °C. The film’s thickness was approximately 110 nm. With a near UV light at a wavelength of 340 nm and an intensity of 140 µW/cm2, the photosensitivity of an individual α-Fe2O3 thin film photodetector was greater than 40%. An individual α-Fe2O3 thin film-based photodetector’s rapid photoresponse time of 1.6 ms and responsivity of ~ 1 mA/W can be attributed to the band gap and chemisorption of oxygen on the film’s surface. The photodetectors’ simple, low-cost, and large-scale fabrication demonstrates the fabrication of a stable, reversible, and rapid photo-responsive photodetector for near UV wavelength.

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Fan, Ming-Ming, Kang-Li Xu, Ling Cao, and Xiu-Yan Li. "Fast-speed self-powered PEDOT:PSS/α-Ga₂O₃ nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection." Chinese Physics B 31, no. 4 (March 1, 2022): 048501. http://dx.doi.org/10.1088/1674-1056/ac3814.

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The α-Ga2O3 nanorod array is grown on FTO by hydrothermal and annealing processes. And a self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO (PGF) photodetector has been demonstrated by spin coating PEDOT:PSS on the α-Ga2O3 nanorod array. Successfully, the PGF photodetector shows solar-blind UV/visible dual-band photodetection. Our device possesses comparable solar-blind UV responsivity (0.18 mA/W at 235 nm) and much faster response speed (0.102 s) than most of the reported self-powered α-Ga2O3 nanorod array solar-blind UV photodetectors. And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm. The response time is also much faster than the other non-self-powered β-Ga2O3 DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga2O3 heterojunction. The results herein may prove a promising way to realize fast-speed self-powered α-Ga2O3 photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking, imaging, machine vision and communication.

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Yan, Xu, Xueqiang Ji, Jinjin Wang, Chao Lu, Zuyong Yan, Shengrun Hu, Sai Zhang, and Peigang Li. "Improve photo-to-dark current ratio of p-Si/SiO₂/n-Ga₂O₃ heterojunction solar-blind photodetector by inserting SiO₂ barrier layer." Journal of Vacuum Science & Technology B 40, no. 5 (September 2022): 052207. http://dx.doi.org/10.1116/5.0107495.

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In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga2O3 and p-Si/SiO2/n-Ga2O3 heterojunctions were fabricated by metalorganic chemical vapor deposition, respectively. Benefitting from the electron-blocking ability of SiO2 dielectric layer insertion, p-Si/SiO2/n-Ga2O3 photodetectors exhibit a very low dark current of 1.14 × 10−12 A, which is 4 orders of magnitude lower than p-Si/Ga2O3 photodetectors (3.22 × 10−8 A). At the same time, a high photo-to-dark current ratio (1.81 × 105) of p-Si/SiO2/n-Ga2O3 photodetectors was obtained under UV light (λ = 254 nm) at −15 V. Meanwhile, the p-Si/SiO2/n-Ga2O3 devices express better photodetection performance, in which the responsivity and EQE are about two times more than that of p-Si/Ga2O3 photodetectors. Furthermore, the photodetector was found to possess impressive photodetection stabilities. Our results indicate that the p-Si/SiO2/n-Ga2O3 photodetector is an excellent candidate for high-sensitivity, ultrafast response solar-blind UV light detection.

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Jiang, Guohua, Dongmei Zhao, and Bo Zhao. "ZnO nanowire UV photodetector with multiple channels." Microelectronics International 35, no. 1 (January 2, 2018): 18–23. http://dx.doi.org/10.1108/mi-10-2016-0068.

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Purpose The purpose of this paper is to investigate the optoelectronic properties of the multichannel ZnO UV photodetectors. Design/methodology/approach ZnO nanowires were assembled by dielectrophoresis for the UV photodetectors. Different ZnO channels were adjusted by different alternating current voltages and investigated for UV optoelectronic properties. Findings The number of the ZnO channels increases with the enhancing alternating current voltage. Optimum performance of the UV photodetectors is obtained with more channels. Originality/value Dielectrophoresis is a promising method for controllable assembly of multichannel ZnO photodetectors. ZnO photodetectors with more channels demonstrate a good response to 380-nm UV light, which shows great potential application in UV photodetector.

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Wu, Chao, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, and Fengmin Wu. "Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga₂O₃." Journal of Semiconductors 44, no. 7 (July 1, 2023): 072807. http://dx.doi.org/10.1088/1674-4926/44/7/072807.

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Abstract Gallium oxide (Ga2O3) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga2O3 could potentially improve the lifetime of the flexible photodetectors while maintaining their performance. Herein, a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate, which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT: PSS/Ga2O3 heterojunction. The self-healing of the Ga2O3 based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network, which allows the photodetector to recover its original configuration and function after damage. After self-healing, the photocurrent of the photodetector decreases from 1.23 to 1.21 μA, while the dark current rises from 0.95 to 0.97 μA, with a barely unchanged of photoresponse speed. Such a remarkable recovery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

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Shang, Guoxin, Libin Tang, Gang Wu, Shouzhang Yuan, Menghan Jia, Xiaopeng Guo, Xin Zheng, Wei Wang, Biao Yue, and Kar Seng Teng. "High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector." Sensors 23, no. 5 (March 2, 2023): 2741. http://dx.doi.org/10.3390/s23052741.

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The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications.

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Fong, Chee Yong, Sha Shiong Ng, NurFahana Mohd Amin, Fong Kwong Yam, and Zainuriah Hassan. "Sol-gel-derived gallium nitride thin films for ultraviolet photodetection." Microelectronics International 36, no. 1 (January 7, 2019): 8–13. http://dx.doi.org/10.1108/mi-12-2017-0074.

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Purpose This study aims to explore the applicability of the sol-gel-derived GaN thin films for UV photodetection. Design/methodology/approach GaN-based ultraviolet (UV) photodetector with Pt Schottky contacts was fabricated and its applicability was investigated. The current-voltage (I-V) characteristics of the GaN-based UV photodetector under the dark current and photocurrent were measured. Findings The ideality factors of GaN-based UV photodetector under dark current and photocurrent were 6.93 and 5.62, respectively. While the Schottky barrier heights (SBH) for GaN-based UV photodetector under dark current and photocurrent were 0.35 eV and 0.34 eV, respectively. The contrast ratio and responsivity of this UV photodetector measured at 5 V were found to be 1.36 and 1.68 μA/W, respectively. The photoresponse as a function of time was measured by switching the UV light on and off continuously at different forward biases of 1, 3 and 6 V. The results showed that the fabricated UV photodetector has reasonable stability and repeatability. Originality/value This work demonstrated that GaN-based UV photodetector can be fabricated by using the GaN thin film grown by low-cost and simple sol-gel spin coating method.

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Liu, Geng, Liang Yao, Ying Liu, Rongdun Hong, Ruijun Zhang, and Feng Zhang. "Study on SiC UV/EUV Coaxial Photodetector." Journal of Physics: Conference Series 2549, no. 1 (July 1, 2023): 012014. http://dx.doi.org/10.1088/1742-6596/2549/1/012014.

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Abstract In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.

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Teker, Kasif. "Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector." Journal of Nano Research 60 (November 2019): 86–93. http://dx.doi.org/10.4028/www.scientific.net/jnanor.60.86.

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High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.

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Ye, Qiannan, Xu Zhang, Rihui Yao, Dongxiang Luo, Xianzhe Liu, Wenxin Zou, Chenxiao Guo, Zhuohui Xu, Honglong Ning, and Junbiao Peng. "Research and Progress of Transparent, Flexible Tin Oxide Ultraviolet Photodetector." Crystals 11, no. 12 (November 28, 2021): 1479. http://dx.doi.org/10.3390/cryst11121479.

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Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.

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Lu, Xiao-ling, Xiao-bin Guo, Feng-chao Su, Zheng Su, Wen-hai Qiu, Yan-ping Jiang, Wen-hua Li, Zhen-hua Tang, and Xin-gui Tang. "High-performance Al-doped ZnO flexible ultraviolet photodetector via piezo-phototronic effect." Journal of Applied Physics 133, no. 7 (February 21, 2023): 075301. http://dx.doi.org/10.1063/5.0133534.

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Al-doped ZnO (AZO) flexible ultraviolet (UV) photodetectors were fabricated on polyethylene terephthalate substrates by radio frequency magnetron sputtering technique at room temperature. The single-layer AZO photodetector has a high photocurrent/dark current ratio and exhibits excellent photoresponse performance under UV illumination. When the tensile strain increases from 0 to 0.33, the photocurrent gradually increases, and the sensitivity and linear dynamic range increase by 10 times and 1.5 times, respectively. Under 23.5 mW/cm2 UV illumination at 4 V bias, the rise time and fall time are 0.2 and 0.3 s, respectively, showing that the AZO flexible UV photodetector has good reproducibility and stability. The energy band diagrams before and after applying tensile strain are analyzed to further study the interface modulation behavior. The results reveal that the piezo-phototronic effect has an important influence on the performance optimization and modulation of flexible UV photodetectors.

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Ren, Bing, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, and Liwen Sang. "Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates." Applied Sciences 9, no. 14 (July 19, 2019): 2895. http://dx.doi.org/10.3390/app9142895.

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The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage. It is found that a relatively lower growth rate for the GaN epilayer is preferred to improve the performance of the Schottky-type photodetectors due to the better microstructure and surface properties.

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Talib, Mohammad, Nishant Tripathi, Samrah Manzoor, Prachi Sharma, Vladimir Pavelyev, Valentyn S. Volkov, Aleksey V. Arsenin, Sergey M. Novikov, and Prabhash Mishra. "TiS3 Nanoribbons: A Novel Material for Ultra-Sensitive Photodetection across Extreme Temperature Ranges." Sensors 23, no. 10 (May 21, 2023): 4948. http://dx.doi.org/10.3390/s23104948.

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Photodetectors that can operate over a wide range of temperatures, from cryogenic to elevated temperatures, are crucial for a variety of modern scientific fields, including aerospace, high-energy science, and astro-particle science. In this study, we investigate the temperature-dependent photodetection properties of titanium trisulfide (TiS3)- in order to develop high-performance photodetectors that can operate across a wide range of temperatures (77 K–543 K). We fabricate a solid-state photodetector using the dielectrophoresis technique, which demonstrates a quick response (response/recovery time ~0.093 s) and high performance over a wide range of temperatures. Specifically, the photodetector exhibits a very high photocurrent (6.95 × 10−5 A), photoresponsivity (1.624 × 108 A/W), quantum efficiency (3.3 × 108 A/W·nm), and detectivity (4.328 × 1015 Jones) for a 617 nm wavelength of light with a very weak intensity (~1.0 × 10−5 W/cm2). The developed photodetector also shows a very high device ON/OFF ratio (~32). Prior to fabrication, the TiS3 nanoribbons were synthesized using the chemical vapor technique and characterized according to their morphology, structure, stability, and electronic and optoelectronic properties; this was performed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD), thermogravimetric analysis (TGA), and a UV–Visible–NIR spectrophotometer. We anticipate that this novel solid-state photodetector will have broad applications in modern optoelectronic devices.

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Jimenéz-Vivanco, María R., Godofredo García, Jesús Carrillo, Francisco Morales-Morales, Antonio Coyopol, Miguel Gracia, Rafael Doti, Jocelyn Faubert, and J. Eduardo Lugo. "Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector." Nanomaterials 10, no. 2 (January 28, 2020): 222. http://dx.doi.org/10.3390/nano10020222.

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Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.

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Li, Shasha, Tao Deng, Yang Zhang, Yuning Li, Weijie Yin, Qi Chen, and Zewen Liu. "Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors." Nanophotonics 8, no. 5 (April 26, 2019): 899–908. http://dx.doi.org/10.1515/nanoph-2019-0060.

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AbstractSensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the ozone hole. In this paper, a solar-blind UV photodetector based on a buried-gate graphene field-effect transistor (GFET) decorated with titanium dioxide (TiO2) nanoparticles (NPs) was demonstrated. Under the illumination of a 325-nm laser (spot size ~2 μm) with a total power of 0.35 μW, a photoresponsivity as high as 118.3 A/W was obtained, at the conditions of zero gate bias and a source-drain bias voltage of 0.2 V. This photoresponsivity is over 600 times higher than that of a recently reported solar-blind UV photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A/W). Experiments showed that the photoresponsivity of the TiO2 NPs decorated GFET photodetectors can be further enhanced by increasing the source-drain bias voltage or properly tuning the gate bias voltage. Furthermore, the photoresponse time of the TiO2 NPs decorated GFET photodetectors can also be tuned by the source-drain bias and gate bias. This study paves a simple and feasible way to fabricate highly sensitive, cost-efficient, and integrable solar-blind UV photodetectors.

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Li, Haixia, Bingyi Liu, Weiwei Lin, Yang Liu, Yu Wang, Zhongyuan Zhang, Lun Xiong, and Jiayou Tao. "Enhancing Performance of Broadband Photodetectors Based on Perovskite CsPbBr₃ Nanocrystals/ZnO-Microwires Heterostructures." Science of Advanced Materials 13, no. 9 (September 1, 2021): 1748–55. http://dx.doi.org/10.1166/sam.2021.4072.

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A broadband photodetector response in the ultraviolet (UV)-to-green range (up to 530 nm) based on perovskite CsPbBr3 nanocrystals (NCs)/ZnO-microwires (MWs) heterostructures was realized via a convenient spin-coating method. Under UV light (365 nm) illumination, compared with a bare-ZnO-MW-based photodetector, the CsPbBr3-NCs/ZnO-MWs-heterostructure-based photodetector exhibited a faster photoresponse (<0.1 s) and higher current responsivity (93.50 AW−1), external quantum efficiency (3399%), and detectivity (4.4 × 1010). In addition, the photodetector based on CsPbBr3-NCs/ZnO-MWs heterostructures also exhibited a very fast photoresponse to green light (530 nm). These can be ascribed to the strong light-trapping ability of CsPbBr3 NCs and high charge-transfer efficiency at the CsPbBr3-NCs/ZnO-MWs-heterojunction interface due to the built-in field, which facilitates the spatial separation of the photogenerated carriers. Therefore, this work will develop perovskite/ZnO nanomaterials as promising building blocks for broadband photodetectors and wider optoelectronic applications.

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Li, Ying, Zhifeng Shi, Wenqing Liang, Lintao Wang, Sen Li, Fei Zhang, Zhuangzhuang Ma, et al. "Highly stable and spectrum-selective ultraviolet photodetectors based on lead-free copper-based perovskites." Materials Horizons 7, no. 2 (2020): 530–40. http://dx.doi.org/10.1039/c9mh01371g.

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Thompson, Jesse E., Darian Smalley, and Masahiro Ishigami. "Solar-Blind Ultraviolet Photodetectors Based on Vertical Graphene-Hexagonal Boron Nitride Heterostructures." MRS Advances 5, no. 37-38 (2020): 1993–2002. http://dx.doi.org/10.1557/adv.2020.331.

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AbstractPhotodetectors operating in the ultraviolet (UV) play a pivotal role in applications such as ozone monitoring and biosensing. One key factor to successfully implementing such photodetectors is that they must be solar-blind to avoid detecting ambient visible and infrared light. Unfortunately, UV photodetectors based on silicon and other typical semiconductors are not natively solar-blind, since their band gap energies are in the visible range. Hexagonal boron nitride (h-BN) is an example of a wide band gap semiconductor which shows promise for use as the absorbing medium in a UV photodetector device, since its band gap is wide enough to make it inherently insensitive to light in the visible range and above. Here we report on the fabrication and characterization of a graphene-h-BN-heterostructure photodetector which utilizes a vertical geometry, in principle allowing for highly scalable production. We find that our device shows a finite photoresponse to illumination by a 254 nm light source, but not to a 365 nm source, thus suggesting that our device is solar-blind.

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Jagani, Hirenkumar Shantilal, Vijay Dixit, Abhishek Patel, Jagrutiba Gohil, and V. M. Pathak. "Stability & durability of self-driven photo-detective parameters based on Sn_1−βSb_βSe (β = 0, 0.05, 0.10, 0.15, 0.20) ternary alloy single crystals." RSC Advances 12, no. 44 (2022): 28693–706. http://dx.doi.org/10.1039/d2ra05492b.

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DVT grown SnSbSe crystals were characterized using E-DAX, XPS, XRD, SEM, HRTEM, UV, PL and Raman characterizations. Photodetection parameters depict the improvement in the stability and durability of device for SbSnSe photodetector compare to SnSe.

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Fan, Ming-Ming, Kang-Li Xu, Xiu-Yan Li, Gao-Hang He, and Ling Cao. "Self-powered solar-blind UV/visible dual-band photodetection based on a solid-state PEDOT:PSS/α-Ga₂O₃ nanorod array/FTO photodetector." Journal of Materials Chemistry C 9, no. 46 (2021): 16459–67. http://dx.doi.org/10.1039/d1tc04091j.

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A solid-state PEDOT:PSS/α-Ga2O3 nanorod array/FTO photodetector paves a feasible way to realize high-performance self-powered α-Ga2O3 solar-blind UV/visible dual-band photodetection by easy, common and low-cost processes.

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Zhu, Mengru, Zhiwei Zhao, Yong Fang, Zhengjin Weng, and Wei Lei. "A Flexible Solar-blind Ultraviolet Photodetector based on Carbon Nanodots." Journal of Physics: Conference Series 2065, no. 1 (November 1, 2021): 012016. http://dx.doi.org/10.1088/1742-6596/2065/1/012016.

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Abstract A flexible solar-blind ultraviolet (UV) photodetector based on the carbon nanodots (CNDs) was fabricated on a polyethylene terephthalate (PET) substrate. The responsivity of 1.2 mA/W is obtained for 10 V applied bias under 254 nm illumination. Further, bending tests were carried out under the 0.2% strain, and the results showed that this flexible photodetector had stable characteristics and no obviously decrease of the photocurrent. The bending performances exhibit excellent potential for the fabrication of smart and flexible photodetectors.

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Shao, Dali, Mingpeng Yu, Jie Lian, and Shayla Sawyer. "Ultraviolet Photodetector Fabricated from 3D WO3 Nanowires/Reduced Graphene Oxide Composite Material." MRS Proceedings 1659 (2014): 193–98. http://dx.doi.org/10.1557/opl.2014.211.

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ABSTRACTAn Ultraviolet (UV) photodetector with high responsivity and relative fast response speed was fabricated from three dimensional WO3 nanowires/reduced graphene oxide (3D WO3 NWs/RGO) composite materials. The 3D WO3 NDs/GN composite was synthesized using a facile three-step synthesis. First, the Na2WO4/Graphene Oxide (GO) precursor was synthesized by homogeneous precipitation. Second, the Na2WO4/GO precursor was transformed into H2WO4/GO composites by acidification. Finally, the H2WO4/GO composites were reduced to 3D WO3 NWs/RGO via hydrothermal reduction process. A maximum photoresponsivity of 4.2 A/W at 374 nm was observed under 20 V bias. The UV photodetector showed relative fast transient response, which is at least 2 orders of magnitude faster than UV photodetectors fabricated from WO3 nanowires. The good photoresponsivity and fast transient response are attributed to improved carrier transport and collection efficiency through graphene.

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Liu, Zhiyi, Xiaomei Hu, and Mingsheng Long. "High-performances ultraviolet photodetector based on vertical van der Waals heterostructures." Journal of Physics: Conference Series 2383, no. 1 (December 1, 2022): 012037. http://dx.doi.org/10.1088/1742-6596/2383/1/012037.

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High-performance ultraviolet (UV) photodetectors play a very important role in many fields, especially in the military, biomedical and other fields. [1]In recent years, many studies have realized ultraviolet photodetectors of 2D layered materials, overcome the problems of traditional ultraviolet detectors that are large and use high voltages. [1]Up to now, most of these works use atomically thin layers and simple p-n van der Waals (vdW) heterostructures, which have difficulty meeting the conditions of high sensitivity and ultrafast response at the same time. we report the double p-n van der Waals (vdW) heterostructure built on a large electrode. The two p-n junctions connected in parallel were proven to be able to effectively separate photo-generated carriers and suitable for ultraviolet light. This new type of photodetector exhibits competitive performance, including high R up to 254.8 A/W under UV light, and fast photoresponse τr = 7.9 μs and τd = 3.9 μs. These results provide an ideal platform for realizing highly sensitive UV photodetectors.

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Mei, Tong, Shan Li, Shaohui Zhang, Yuanyuan Liu, and Peigang Li. "Simply equipped ε-Ga₂O₃ film/ZnO nanoparticle heterojunction for self-powered deep UV sensor." Physica Scripta 97, no. 1 (January 1, 2022): 015808. http://dx.doi.org/10.1088/1402-4896/ac476e.

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Abstract In this paper, a ε-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep ultraviolet (UV) photodetector is described for 254 nm wavelength sensing application. The constructed ε-Ga2O3/ZnO heterojunction photodetector can operate in dual modes which are power supply mode and self-powered mode. Under reverse 5 V bias with 254 nm light intensity of 500 μW cm−2, the photoresponsivity, specific detectivity and external quantum efficiency are 59.7 mA W−1, 7.83 × 1012 Jones and 29.2%. At zero bias, the advanced ε-Ga2O3/ZnO photodetector performs decent self-powered photoelectrical properties with photo-to-dark current ratio of 1.28 × 105, on/off switching ratio of 3.22 × 104, rise/decay times of 523.1/31.7 ms, responsivity of 4.12 mA W−1 and detectivity of 2.24 × 1012 Jones. The prominent photodetection performance lays a solid foundation for ε-Ga2O3/ZnO heterojunction in deep UV sensor application.

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Duan, Li, Feng Wei, Jibin Fan, Xiaochen Yu, Wenxue Zhang, Yan Zhang, Fengni He, Xiaojiao Cheng, and Ye Tian. "Low-Cost Fabrication of UV Photodetector Based on Hexagonal Nanocrystal ZnO:Al/p-Si Heterojunction." Nano 11, no. 02 (February 2016): 1650019. http://dx.doi.org/10.1142/s1793292016500193.

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ZnO:Al/p-Si heterojunction was fabricated by depositing a hexagonal nanocrystal ZnO:Al film on p-type Si substrate using a simple chemical bath deposition (CBD) method. The vertically aligned hexagonal ZnO:Al nanocrystals reduce the grain boundary scattering and provide good conductivity. The ZnO:Al/Si heterojunction shows obvious photocurrent under ultraviolet (UV) illumination. A high UV-to-visible rejection ratio of the ZnO:Al/Si heterojunction indicates that the hexagonal nanocrystal ZnO:Al film is a good material for fabricating UV photodetectors. Furthermore, the response speed of the photodetector based on ZnO:Al hexagonal nanocrystal film is faster than that of most previously reported photodetectors based on ZnO:Al nanorods. We infer it is because the ZnO:Al nanocrystals film has a smaller surface to volume ratio than the ZnO:Al nanorod array.

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Li, Haixia, Weiwei Lin, Liang Ma, Yang Liu, Yu Wang, Ao Li, Xiaorui Jin, and Lun Xiong. "High-performance broadband photodetectors based on all-inorganic perovskite CsPb(Br/I)3 nanocrystal/CdS-microwire heterostructures." RSC Advances 11, no. 19 (2021): 11663–71. http://dx.doi.org/10.1039/d1ra00890k.

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The high performance photodetector based on CsPb(Br/I)₃-NC/CdS-MW heterostructures showed broadband photodetection that covers UV-VIS-NIR range due to the charge transfer at the heterojunction interface and the absorption capability of CsPb(Br/I)₃.

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Zhao, Zhihui, Di Wu, Jiawen Guo, Enping Wu, Cheng Jia, Zhifeng Shi, Yongtao Tian, Xinjian Li, and Yongzhi Tian. "Synthesis of large-area 2D WS2 films and fabrication of a heterostructure for self-powered ultraviolet photodetection and imaging applications." Journal of Materials Chemistry C 7, no. 39 (2019): 12121–26. http://dx.doi.org/10.1039/c9tc03866c.

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High-performance self-powered ultraviolet (UV) photodetector based on a WS₂/GaN heterojunction was demonstrated, which exhibits excellent UV photoresponse properties. Significantly, this photodetector has exhibited excellent UV imaging capability.

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Liu, Jinzhang, Nunzio Motta, and Soonil Lee. "Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer." Beilstein Journal of Nanotechnology 3 (May 2, 2012): 353–59. http://dx.doi.org/10.3762/bjnano.3.41.

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ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

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Basyooni, Mohamed A., A. E. H. Gaballah, Mohammed Tihtih, Issam Derkaoui, Shrouk E. Zaki, Yasin Ramazan Eker, and Şule Ateş. "Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors." Materials 16, no. 7 (March 30, 2023): 2766. http://dx.doi.org/10.3390/ma16072766.

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Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON–OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm−2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord’s methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I–V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.

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Thahe, Asad A., Motahher A. Qaeed, Suhail Najm Abdullah, Ibrahim M. Badawy, Hasan Alqaraghuli, Yasser Saleh Mustafa Alajerami, A. Mindil, and Ammar AL-Farga. "Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio." Journal of Nanomaterials 2023 (April 26, 2023): 1–11. http://dx.doi.org/10.1155/2023/6576028.

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Despite several attempts to enhance the electrical and charge carrier transport characteristics of porous silicon (PSi), the requisite conditions for optimally synthesizing n-PSi with appealing optoelectronic properties are yet to be achieved. Therefore, this research explores the effect of the chemical ratio of precursor materials (HF:C2H6O:H2O2) on the surface morphology, crystalline structure, and optical and electric properties of PSi. The PSi was produced by photoelectrochemical etching followed by anodization of the n-type Si under light illumination. The properties of the as-prepared PSi were studied by means of microscopic and spectroscopic techniques. The HF:C2H6O:H2O2 chemical ratio was optimized at 2 : 1 : 1. A metal–semiconductor–metal (MSM) ultraviolet photodetector (Pt/n-PSi/Pt) was fabricated, which exhibited high performances under UV light (365 nm) illumination. The photodetector was shown to be highly stable and reliable with a rapid rise time of 0.56 s at a bias voltage of +5 V. The MSM photodetector displayed responsivity (Rp) of 9.17 A/m at 365 nm, which significantly exceeds the values reported for TiC/porous Si/Si in some contemporary research. The photodetector fabricated from n-PSi, synthesized at an optimum chemical ratio (2 : 1 : 1) exhibited the best photodetection performance, possibly due to the high porosity and defect-free state of the n-PSi thin films.

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Yuan, Dingcheng, Lingyu Wan, Haiming Zhang, Jiang Jiang, Boxun Liu, Yongsheng Li, Zihan Su, and Junyi Zhai. "An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector." Nanomaterials 12, no. 18 (September 15, 2022): 3200. http://dx.doi.org/10.3390/nano12183200.

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Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO2) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on–off ratio of 2.49 × 105, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO2 heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light–dark ratio was increased by 8.40 × 105 times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.

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Xiao, Yifan, Long Min, Xinke Liu, Wenjun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, and David Wei Zhang. "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics 9, no. 9 (February 24, 2020): 3035–44. http://dx.doi.org/10.1515/nanoph-2019-0562.

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AbstractThe MoS2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS2 film on SiC substrate shows high quality and thermal stability, in which the full width at half-maximum and first-order temperature coefficient for the $E_{2g}^1$ Raman mode are 4.6 cm−1 and −0.01382 cm−1/K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, including an extremely low dark current of ~1 nA at a bias of 20 V and a low noise equivalent of 10−13–10−15 W/Hz1/2. The maximum responsivity of the MoS2/SiC photodetector is 5.7 A/W with the incident light power of 4.35 μW at 365 nm (UV light). Furthermore, the maximum photoconductive gain, noise equivalent power, and normalized detectivity for the fabricated detector under 365 nm illumination are 79.8, 7.08 × 10−15 W/Hz1/2, and 3.07 × 1010 Jonesat, respectively. We thus demonstrate the possibility for integrating high-performance photodetectors array based on MoS2/SiC via direct chemical vapor growth.

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SHING, CHRISTOPHER, LIQIAO QIN, and SHALYA SAWYER. "BIO-SENSING SENSITIVITY OF A NANOPARTICLE BASED ULTRAVIOLET PHOTODETECTOR." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 505–13. http://dx.doi.org/10.1142/s0129156411006799.

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Bio-sensing sensitivity of a spectrally selective nanoparticle based ultraviolet (UV) photodetector is characterized in comparison to a silicon photodiode and a photomultiplier tube (PMT). The nanoparticle based photodetector is comprised of poly-vinyl alcohol (PVA) coated zinc-oxide ( ZnO ) nanoparticles deposited on an aluminum-gallium-nitride ( AlGaN ) epitaxially grown substrate. The sensitivity was determined by measuring the fluorescence intensity of the native fluorophore, tryptophan, in Escherichia coli (E-coli, ATCC-25922) cells. Tryptophan intrinsically fluoresces with a peak at 340 nm under 280 nm UV light illumination. It is shown that this detector can sense the concentration of E-coli to 2.5 × 108 cfu/mL while the silicon photodiode cannot detect the intrinsic fluorescence at all. Nevertheless, the PMT outperformed the ZnO nanoparticle- AlGaN substrate based photodetector with the ability to sense E-coli concentrations to 3.91 × 106 cfu/mL. However, because PMT based systems are commonly limited by high dark current, susceptible to environmental changes, sensitive to ambient light, are not spectrally selective and have high power consumption, biological detection systems comprised of these ZnO nanoparticle- AlGaN substrate based photodetectors can be more effective for near real time characterization of potential bacterial contamination.

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35

Rogalski, Antoni, Zbigniew Bielecki, Janusz Mikołajczyk, and Jacek Wojtas. "Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids." Sensors 23, no. 9 (May 2, 2023): 4452. http://dx.doi.org/10.3390/s23094452.

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The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.

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Kim, Hyunki, Gyeong-Nam Lee, and Joondong Kim. "Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors." Journal of Nanomaterials 2018 (July 2, 2018): 1–8. http://dx.doi.org/10.1155/2018/4178989.

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A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.

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Rajan, Akshta, Kashima Arora, Harish Kumar Yadav, Vinay Gupta, and Monika Tomar. "Copper Doped ZnO Thin Film for Ultraviolet Photodetector with Enhanced Photosensitivity." MRS Proceedings 1494 (2013): 43–49. http://dx.doi.org/10.1557/opl.2012.1742.

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ABSTRACTUltraviolet photoconductivity in Copper doped ZnO (Cu:ZnO) thin films synthesized by sol-gel technique is investigated. Response characteristics of Pure ZnO thin film and Cu:ZnO thin film UV photodetector with 1.3 at. wt % Cu doping biased at 5 V for UV radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. Cu:ZnO UV photodetector is found to exhibit a high photocoductive gain (K = 1.5×104) with fast recovery (T90% = 23s) in comparison to pure ZnO thin film based photodetector (K = 4.9×101 and T90% = 41s). Cu2+ ions have been substituted in ZnO lattice which has been confirmed by X-ray diffraction (XRD) and Raman spectroscopy leading to lowering of dark current (Ioff ∼ 1.44 nA). Upon UV illumination, more electron hole pairs are generated in the photodetector due to the high porosity and roughness of the surface of the film which favours adsorption of more oxygen on the surface of the photodetector. The photogenerated holes recombined with the trapped electrons, increasing the concentration of photogenerated electrons in the conduction band enhancing the photocurrent (Ion ∼ 0.02 mA) of the Cu:ZnO photodetector.

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Tang, Xiaobing, Zhibiao Hao, Lai Wang, Jiadong Yu, Xun Wang, Yi Luo, Changzheng Sun, et al. "Plasmon-Enhanced Hot-Electron Photodetector Based on Au/GaN-Nanopillar Arrays for Short-Wave-Infrared Detection." Applied Sciences 12, no. 9 (April 23, 2022): 4277. http://dx.doi.org/10.3390/app12094277.

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The complex device structure and costly preparation process have hindered the development and application of the GaN-based ultraviolet and infrared (UV–IR) dual-color photodetector. In this work, we designed and prepared an Au/GaN-nanopillar-based hot-electron photodetector that can operate in the short-wave infrared range, well below the GaN bandgap energy. A suitable Schottky barrier height was developed for a higher photo-to-dark current ratio by post-etching annealing. The surface plasmons generated by Au/GaN-nanopillar arrays could effectively improve the light absorption efficiency. As a result, compared with the planar device, the responsivity of the Au/GaN-nanopillar device could be enhanced by about two orders of magnitude. With the advantages of a simple structure and easy preparation, the proposed devices are promising candidates for application in UV–IR dual-color photodetection.

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Lu, Chien-Yuan, Sheng-Po Chang, Shoou-Jinn Chang, Cheng-Liang Hsu, Yu-Zung Chiou, and I.-Cherng Chen. "ZnO Nanowire-Based UV Photodetector." Journal of Nanoscience and Nanotechnology 10, no. 2 (February 1, 2010): 1135–38. http://dx.doi.org/10.1166/jnn.2010.1862.

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Korona, K. P., A. Drabińska, K. Pakuła, and J. M. Baranowski. "Multiband GaN/AlGaN UV Photodetector." Acta Physica Polonica A 110, no. 2 (August 2006): 211–17. http://dx.doi.org/10.12693/aphyspola.110.211.

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Li, Eric Y., Andrew F. Zhou, and Peter X. Feng. "High-Performance Nanoplasmonic Enhanced Indium Oxide—UV Photodetectors." Crystals 13, no. 4 (April 17, 2023): 689. http://dx.doi.org/10.3390/cryst13040689.

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In this paper, high-performance UV photodetectors have been demonstrated based on indium oxide (In2O3) thin films of approximately 1.5–2 μm thick, synthesized by a simple and quick plasma sputtering deposition approach. After the deposition, the thin-film surface was treated with 4–5 nm-sized platinum (Pt) nanoparticles. Then, titanium metal electrodes were deposited onto the sample surface to form a metal–semiconductor–metal (MSM) photodetector of 50 mm2 in size. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to study the crystal structure of the synthesized In2O3 film. The nanoplasmonic enhanced In2O3-based UV photodetectors were characterized by various UV wavelengths at different radiation intensities and temperatures. A high responsivity of up to 18 A/W was obtained at 300 nm wavelength when operating at 180 °C. In addition, the fabricated prototypes show a thermally stable baseline and excellent repeatability to a wide range of UV lights with low illumination intensity when operating at such a high temperature.

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Zheng, Qinghong, Jin Huang, Shilin Cao, and Haili Gao. "A flexible ultraviolet photodetector based on single crystalline MoO3 nanosheets." Journal of Materials Chemistry C 3, no. 28 (2015): 7469–75. http://dx.doi.org/10.1039/c5tc00850f.

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A flexible UV photodetector was fabricated based on highly crystalline MoO₃ nanosheets. The photodetector exhibits high UV spectral selectivity, excellent stability, fast response speed and is able to bear significant external mechanical forces.

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Wang, Xingang, Tao Xiong, Kaiyao Xin, Juehan Yang, Yueyang Liu, Zeping Zhao, Jianguo Liu, and Zhongming Wei. "Polarization sensitive photodetector based on quasi-1D ZrSe₃." Journal of Semiconductors 43, no. 10 (October 1, 2022): 102001. http://dx.doi.org/10.1088/1674-4926/43/10/102001.

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Abstract The in-plane anisotropy of transition metal trichalcogenides (MX3) has a significant impact on the molding of materials and MX3 is a perfect choice for polarized photodetectors. In this study, the crystal structure, optical and optoelectronic anisotropy of one kind of quasi-one-dimensional (1D) semiconductors, ZrSe3, are systematically investigated through experiments and theoretical studies. The ZrSe3-based photodetector shows impressive wide spectral response from ultraviolet (UV) to near infrared (NIR) and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W-1 and detectivity of ~106 at 532 nm. Moreover, the dichroic ratio of ZrSe3-based polarized photodetector is around 1.1 at 808 nm. This study suggests that ZrSe3 has potential in optoelectronic applications and polarization detectors.

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Huang, Zhiheng, Shuren Zhou, Lingrui Chen, Qiqi Zheng, Honglin Li, Yuanqiang Xiong, Lijuan Ye, et al. "Fully Transparent Amorphous Ga2O3-Based Solar-Blind Ultraviolet Photodetector with Graphitic Carbon Electrodes." Crystals 12, no. 10 (October 9, 2022): 1427. http://dx.doi.org/10.3390/cryst12101427.

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In recent years, transparent electrode materials have had a positive effect on improving the responsivity of photodetectors by increasing the effective illumination area of devices due to their high transmittance. In this work, by using radio frequency magnetron sputtering and simple mask technology, an amorphous Ga2O3-based solar-blind UV photodetector with graphitic carbon (C) electrodes was created. The device exhibits a high responsivity of 16.34 A/W, an external quantum efficiency of 7979%, and excellent detectivity of 1.19 × 1013 Jones at room temperature under a light density of 5 μw/cm2. It has been proved that C electrodes can replace the traditional noble metal electrode. Additionally, the potential of the transparent photodetector array in solar-blind imaging is explored. We believe that the present study will pave the way for the preparation of a fully transparent and high-response solar-blind ultraviolet photodetector array.

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Reddy B, Kumaar Swamy, Sushmitha Veeralingam, Pramod H. Borse, and Sushmee Badhulika. "1D NiO–3D Fe₂O₃ mixed dimensional heterostructure for fast response flexible broadband photodetector." Nanotechnology 33, no. 23 (March 15, 2022): 235201. http://dx.doi.org/10.1088/1361-6528/ac5838.

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Abstract Conventional heterojunction photodetectors rely on planar junction architecture which suffer from low interfacial contact area, inferior light absorption characteristics and complex fabrication schemes. Heterojunctions based on mixed dimensional nanostructures such as 0D-1D, 1D-2D, 1D-3D etc have recently garnered exceptional research interest owing to their atomically sharp interfaces, tunable junction properties such as enhanced light absorption cross-section. In this work, a flexible broadband UV–vis photodetector employing mixed dimensional heterostructure of 1D NiO nanofibers and 3D Fe2O3 nanoparticles is fabricated. NiO nanofibers were synthesized via economical and scalable electro-spinning technique and made composite with Fe2O3 nanoclusters for hetero-structure fabrication. The optical absorption spectra of NiO nanofibers and Fe2O3 nanoparticles exhibit peak absorption in UV and visible spectra, respectively. The as-fabricated photodetector displays quick response times of 0.09 s and 0.18 s and responsivities of 5.7 mA W−1 (0.03 mW cm−2) and 5.2 mA W−1 (0.01 mW cm−2) for UV and visible spectra, respectively. The fabricated NiO–Fe2O3 device also exhibits excellent detectivity in the order of 1012 jones. The superior performance of the device is ascribed to the type-II heterojunction between NiO–Fe2O3 nanostructures, which results in the localized built-in potential at their interface, that aids in the effective carrier separation and transportation. Further, the flexible photodetector displays excellent robustness when bent over ∼1000 cycles thereby proving its potential towards developing reliable, diverse functional opto-electronic devices.

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Long, Yuchen, Ziling Zhang, Xiutao Yang, Yang Liu, Guangcan Luo, Jingquan Zhang, and Wei Li. "Enhanced Spectral Response of ZnO-Nanorod-Array-Based Ultraviolet Photodetectors by Alloying Non-Isovalent Cu–O with CuAlO2 P-Type Layer." Nanomaterials 13, no. 9 (April 26, 2023): 1472. http://dx.doi.org/10.3390/nano13091472.

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CuAlO2 was synthesized by a hydrothermal method, in which the Cu–O dimers were incorporated by simply altering the ratio of the reactants and the temperature. The incorporation process increases the grain size in CuAlO2, and modulates the work function and binding energies for CuAlO2 due to the partial substitution of Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying non-isovalent Cu–O with a CuAlO2 host. Based on the ZnO nanorod arrays (NRs) ultraviolet photodetector, CuAlO2/Cu–O fabricated by the low-cost drop-coating method was used as the p-type hole transport layer. The incorporation of the Cu–O clusters into CuAlO2 lattice to enhance the conductivity of CuAlO2 is an effective way for improving ZnO NRs/CuAlO2 device performance. The photodetectors exhibit significant diode behavior, with a rectification ratio approaching 30 at ±1 V, and a dark saturation current density 0.81 mA cm−2. The responsivity of the ZnO-NRs-based UV photodetector increases from 13.2 to 91.3 mA/W at 0 V bias, with an increase in the detectivity from 2.35 × 1010 to 1.71 × 1011 Jones. Furthermore, the ZnO NRs/[CuAlO2/Cu–O] photodetector exhibits a maximum responsivity of 5002 mA/W at 1.5 V bias under 375 nm UV illumination.

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Wang, Cheng-Jyun, Hsin-Chiang You, Jen-Hung Ou, Yun-Yi Chu, and Fu-Hsiang Ko. "Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors." Nanomaterials 10, no. 3 (March 4, 2020): 458. http://dx.doi.org/10.3390/nano10030458.

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Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching ION/IOFF ratio of approximately 105. Therefore, the stable and excellent gate bias-controlled photo-transistors were fabricated and characterized in detail for ultraviolet (UV) and visible light sensing. The photodetector exhibited a superior photoresponse with a significant increase of more than 2 orders of magnitude larger drain current generated upon UV illumination. The results could be useful for the development of UV photodetectors by the direct-patterning ink-jet printing technique. Additionally, we also have successfully demonstrated that a metal-semiconductor junction structure that enables plasmon energy detection by using the plasmonic effects is an efficient conversion of plasmon energy to an electrical signal. The device showed a significant variations negative shift of threshold voltage under different light power density with exposure of visible light. With the ZnO-based TFTs, only ultraviolet light detection extends to the visible light wavelength.

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Charipar, Kristin, Heungsoo Kim, Alberto Piqué, and Nicholas Charipar. "ZnO Nanoparticle/Graphene Hybrid Photodetectors via Laser Fragmentation in Liquid." Nanomaterials 10, no. 9 (August 21, 2020): 1648. http://dx.doi.org/10.3390/nano10091648.

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By combining the enhanced photosensitive properties of zinc oxide nanoparticles and the excellent transport characteristics of graphene, UV-sensitive, solar-blind hybrid optoelectronic devices have been demonstrated. These hybrid devices offer high responsivity and gain, making them well suited for photodetector applications. Here, we report a hybrid ZnO nanoparticle/graphene phototransistor that exhibits a responsivity up to 4 × 104 AW−1 and gain of up to 1.3 × 105 with high UV wavelength selectivity. ZnO nanoparticles were synthesized by pulsed laser fragmentation in liquid to attain a simple, efficient, ligand-free method for nanoparticle fabrication. By combining simple fabrication processes with a promising device architecture, highly sensitive ZnO nanoparticle/graphene UV photodetectors were successfully demonstrated.

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Yildirim, Fatma, Zeynep Orhan, Saba Khalili, Hossein Mahmoudi Chenari, and Ş. Aydoğan. "A comparative study of the ZnO Fibers-based photodetectors on n-Si and p-Si." Journal of Physics D: Applied Physics 55, no. 39 (July 18, 2022): 395102. http://dx.doi.org/10.1088/1361-6463/ac7f04.

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Abstract The ZnO fibers (Fs)/p-Si (labeled D1) and ZnO Fs/n-Si (labeled D2) photodetector heterojunctions were fabricated and both devices gave a clear rectifying I–V characteristic with a high rectifying ratio, in the dark. At zero bias, D1 showed self-driven characteristics, while D2 had not and D1 was found to be more stable than D2 in time-dependent measurements. Optoelectronics results revealed that D1 had high sensitivity to both visible and excellent stability after 20 days. At zero bias, the ON/OFF ratio of the D1 photodetector was as high as 33 650 and in the dark, a rectification ratio of 67 400 within ±2 V was obtained for the D1 device. The maximum responsivities of the devices was ∼0.8 mA W−1, and their detectivity was ∼109 Jones. Furthermore, the ZnO Fs/p-Si (labeled D3) and ZnO Fs/n-Si (labeled D3) photodetectors yielded excellent response to 365 nm and 395 nm UV light (10 mW cm−2). Responsivity, detectivity (D), and external quantum efficiency values reached as high as 5.28 A W−1, 1.02 × 1013 Jones, and %16.6, respectively under 365 nm UV light. The excellent responses of the photodetectors to visible and UV light were attributed to the oxygen vacancies in ZnO and the formation of electron–hole pairs by the light effect and their separation by the electric field in the device formed between ZnO and Si.

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Jia, Feixiang, Fan Huang, Sheng Ouyang, Caoyuan Cai, Zhihao Xu, Congjun Wu, Yang Ma, and Min Wang. "Design of photoactive hybrid based intelligent photodetectors for identifying the detected wavelength." Journal of Materials Chemistry C 4, no. 46 (2016): 10797–803. http://dx.doi.org/10.1039/c6tc03449g.

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The similar response time for UV and visible light of the graphene/CdS photodetector is intentionally tuned by inserting ZnS films to produce the graphene/ZnS/CdS photodetector, which can be used as a characteristic parameter to distinguish the detected UV and visible light.

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Journal articles on the topic 'UV photodetector'

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