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Journal articles on the topic 'UV photodetectors'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 September 2023

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1

Jiang, Guohua, Dongmei Zhao, and Bo Zhao. "ZnO nanowire UV photodetector with multiple channels." Microelectronics International 35, no. 1 (January 2, 2018): 18–23. http://dx.doi.org/10.1108/mi-10-2016-0068.

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Purpose The purpose of this paper is to investigate the optoelectronic properties of the multichannel ZnO UV photodetectors. Design/methodology/approach ZnO nanowires were assembled by dielectrophoresis for the UV photodetectors. Different ZnO channels were adjusted by different alternating current voltages and investigated for UV optoelectronic properties. Findings The number of the ZnO channels increases with the enhancing alternating current voltage. Optimum performance of the UV photodetectors is obtained with more channels. Originality/value Dielectrophoresis is a promising method for controllable assembly of multichannel ZnO photodetectors. ZnO photodetectors with more channels demonstrate a good response to 380-nm UV light, which shows great potential application in UV photodetector.
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2

Kaawash, N. M. S., D. I. Halge, V. N. Narwade, J. W. Dadge, and K. A. Bogle. "Fabrication of Near Ultraviolet Photodetector using α-Fe2O3 Thin FilmSynthesized via Spray Coating Technique." Journal of Physics: Conference Series 2426, no. 1 (February 1, 2023): 012011. http://dx.doi.org/10.1088/1742-6596/2426/1/012011.

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Abstract A UV photodetector was created using a spray-deposited α-Fe2O3 thin film on a glass substrate at 160 °C. The film’s thickness was approximately 110 nm. With a near UV light at a wavelength of 340 nm and an intensity of 140 µW/cm2, the photosensitivity of an individual α-Fe2O3 thin film photodetector was greater than 40%. An individual α-Fe2O3 thin film-based photodetector’s rapid photoresponse time of 1.6 ms and responsivity of ~ 1 mA/W can be attributed to the band gap and chemisorption of oxygen on the film’s surface. The photodetectors’ simple, low-cost, and large-scale fabrication demonstrates the fabrication of a stable, reversible, and rapid photo-responsive photodetector for near UV wavelength.
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3

Xie, Haowei, Chenxu Kang, Muhammad Ahsan Iqbal, Xiaoliang Weng, Kewen Wu, Wei Tang, Lu Qi, and Yu-Jia Zeng. "Ferroelectric Tuning of ZnO Ultraviolet Photodetectors." Nanomaterials 12, no. 19 (September 27, 2022): 3358. http://dx.doi.org/10.3390/nano12193358.

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The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.
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4

Wu, Chao, Huaile He, Haizheng Hu, Aiping Liu, Shunli Wang, Daoyou Guo, and Fengmin Wu. "Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga2O3." Journal of Semiconductors 44, no. 7 (July 1, 2023): 072807. http://dx.doi.org/10.1088/1674-4926/44/7/072807.

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Abstract Gallium oxide (Ga2O3) based flexible heterojunction type deep ultraviolet (UV) photodetectors show excellent solar-blind photoelectric performance, even when not powered, which makes them ideal for use in intelligent wearable devices. However, traditional flexible photodetectors are prone to damage during use due to poor toughness, which reduces the service life of these devices. Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga2O3 could potentially improve the lifetime of the flexible photodetectors while maintaining their performance. Herein, a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate, which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT: PSS/Ga2O3 heterojunction. The self-healing of the Ga2O3 based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network, which allows the photodetector to recover its original configuration and function after damage. After self-healing, the photocurrent of the photodetector decreases from 1.23 to 1.21 μA, while the dark current rises from 0.95 to 0.97 μA, with a barely unchanged of photoresponse speed. Such a remarkable recovery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.
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5

Ye, Qiannan, Xu Zhang, Rihui Yao, Dongxiang Luo, Xianzhe Liu, Wenxin Zou, Chenxiao Guo, Zhuohui Xu, Honglong Ning, and Junbiao Peng. "Research and Progress of Transparent, Flexible Tin Oxide Ultraviolet Photodetector." Crystals 11, no. 12 (November 28, 2021): 1479. http://dx.doi.org/10.3390/cryst11121479.

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Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, as the demand for wearable devices continues to increase, the UV photodetector, which is one of the most important sensors, has put forward higher requirements for bending resistance, durability, and transparency. Tin oxide (SnO2) has a wide band gap, high ultraviolet exciton gain, etc., and is considered to be an ideal material for preparing UV photodetectors. At present, SnO2-based UV photodetectors have a transparency of more than 70% in the visible light region and also have excellent flexibility of 160% tensile strain. Focusing on SnO2 nanostructures, the article mainly summarizes the progress of SnO2 UV photodetectors in flexibility and transparency in recent years and proposes feasible optimization directions and difficulties.
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6

Teker, Kasif. "Dielectrophoretic Assembly of Aluminum Nitride (AlN) Single Nanowire Deep Ultraviolet Photodetector." Journal of Nano Research 60 (November 2019): 86–93. http://dx.doi.org/10.4028/www.scientific.net/jnanor.60.86.

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High UV-light sensitivity, fast response, and low power consumption are the most important features of nanowire-based devices for new applications in photodetectors, optical switches, and image sensors. Single AlN nanowire deep ultraviolet (UV) photodetector has been fabricated utilizing very high-quality AlN nanowires through a very practical dielectrophoretic assembly scheme. The low-voltage (≤ 3 V) operating UV photodetector has selectively shown a high photocurrent response to the 254 nm UV light. Furthermore, the photocurrent transients have been modelled to determine the rise and decay time constants as 7.7 s and 11.5 s, respectively. In consequence, combination of deep UV light selectivity and low voltage operation make AlN nanowires great candidates for the development of compact deep UV photodetectors.
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7

Shang, Guoxin, Libin Tang, Gang Wu, Shouzhang Yuan, Menghan Jia, Xiaopeng Guo, Xin Zheng, Wei Wang, Biao Yue, and Kar Seng Teng. "High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector." Sensors 23, no. 5 (March 2, 2023): 2741. http://dx.doi.org/10.3390/s23052741.

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The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications.
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8

Li, Shasha, Tao Deng, Yang Zhang, Yuning Li, Weijie Yin, Qi Chen, and Zewen Liu. "Solar-blind ultraviolet detection based on TiO2 nanoparticles decorated graphene field-effect transistors." Nanophotonics 8, no. 5 (April 26, 2019): 899–908. http://dx.doi.org/10.1515/nanoph-2019-0060.

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AbstractSensitive solar-blind ultraviolet (UV) photodetectors are important to various military and civilian applications, such as flame sensors, missile interception, biological analysis, and UV radiation monitoring below the ozone hole. In this paper, a solar-blind UV photodetector based on a buried-gate graphene field-effect transistor (GFET) decorated with titanium dioxide (TiO2) nanoparticles (NPs) was demonstrated. Under the illumination of a 325-nm laser (spot size ~2 μm) with a total power of 0.35 μW, a photoresponsivity as high as 118.3 A/W was obtained, at the conditions of zero gate bias and a source-drain bias voltage of 0.2 V. This photoresponsivity is over 600 times higher than that of a recently reported solar-blind UV photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction (0.185 A/W). Experiments showed that the photoresponsivity of the TiO2 NPs decorated GFET photodetectors can be further enhanced by increasing the source-drain bias voltage or properly tuning the gate bias voltage. Furthermore, the photoresponse time of the TiO2 NPs decorated GFET photodetectors can also be tuned by the source-drain bias and gate bias. This study paves a simple and feasible way to fabricate highly sensitive, cost-efficient, and integrable solar-blind UV photodetectors.
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9

Yan, Xu, Xueqiang Ji, Jinjin Wang, Chao Lu, Zuyong Yan, Shengrun Hu, Sai Zhang, and Peigang Li. "Improve photo-to-dark current ratio of p-Si/SiO2/n-Ga2O3 heterojunction solar-blind photodetector by inserting SiO2 barrier layer." Journal of Vacuum Science & Technology B 40, no. 5 (September 2022): 052207. http://dx.doi.org/10.1116/5.0107495.

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In this study, the solar-blind ultraviolet photodetectors based on p-Si/Ga2O3 and p-Si/SiO2/n-Ga2O3 heterojunctions were fabricated by metalorganic chemical vapor deposition, respectively. Benefitting from the electron-blocking ability of SiO2 dielectric layer insertion, p-Si/SiO2/n-Ga2O3 photodetectors exhibit a very low dark current of 1.14 × 10−12 A, which is 4 orders of magnitude lower than p-Si/Ga2O3 photodetectors (3.22 × 10−8 A). At the same time, a high photo-to-dark current ratio (1.81 × 105) of p-Si/SiO2/n-Ga2O3 photodetectors was obtained under UV light (λ = 254 nm) at −15 V. Meanwhile, the p-Si/SiO2/n-Ga2O3 devices express better photodetection performance, in which the responsivity and EQE are about two times more than that of p-Si/Ga2O3 photodetectors. Furthermore, the photodetector was found to possess impressive photodetection stabilities. Our results indicate that the p-Si/SiO2/n-Ga2O3 photodetector is an excellent candidate for high-sensitivity, ultrafast response solar-blind UV light detection.
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10

Lu, Xiao-ling, Xiao-bin Guo, Feng-chao Su, Zheng Su, Wen-hai Qiu, Yan-ping Jiang, Wen-hua Li, Zhen-hua Tang, and Xin-gui Tang. "High-performance Al-doped ZnO flexible ultraviolet photodetector via piezo-phototronic effect." Journal of Applied Physics 133, no. 7 (February 21, 2023): 075301. http://dx.doi.org/10.1063/5.0133534.

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Al-doped ZnO (AZO) flexible ultraviolet (UV) photodetectors were fabricated on polyethylene terephthalate substrates by radio frequency magnetron sputtering technique at room temperature. The single-layer AZO photodetector has a high photocurrent/dark current ratio and exhibits excellent photoresponse performance under UV illumination. When the tensile strain increases from 0 to 0.33, the photocurrent gradually increases, and the sensitivity and linear dynamic range increase by 10 times and 1.5 times, respectively. Under 23.5 mW/cm2 UV illumination at 4 V bias, the rise time and fall time are 0.2 and 0.3 s, respectively, showing that the AZO flexible UV photodetector has good reproducibility and stability. The energy band diagrams before and after applying tensile strain are analyzed to further study the interface modulation behavior. The results reveal that the piezo-phototronic effect has an important influence on the performance optimization and modulation of flexible UV photodetectors.
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11

Fan, Ming-Ming, Kang-Li Xu, Ling Cao, and Xiu-Yan Li. "Fast-speed self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO photodetector with solar-blind UV/visible dual-band photodetection." Chinese Physics B 31, no. 4 (March 1, 2022): 048501. http://dx.doi.org/10.1088/1674-1056/ac3814.

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The α-Ga2O3 nanorod array is grown on FTO by hydrothermal and annealing processes. And a self-powered PEDOT:PSS/α-Ga2O3 nanorod array/FTO (PGF) photodetector has been demonstrated by spin coating PEDOT:PSS on the α-Ga2O3 nanorod array. Successfully, the PGF photodetector shows solar-blind UV/visible dual-band photodetection. Our device possesses comparable solar-blind UV responsivity (0.18 mA/W at 235 nm) and much faster response speed (0.102 s) than most of the reported self-powered α-Ga2O3 nanorod array solar-blind UV photodetectors. And it presents the featured and distinguished visible band photoresponse with a response speed of 0.136 s at 540 nm. The response time is also much faster than the other non-self-powered β-Ga2O3 DUV/visible dual-band photodetectors due to the fast-speed separation of photogenerated carries by the built-in electric field in the depletion regions of PEDOT:PSS/α-Ga2O3 heterojunction. The results herein may prove a promising way to realize fast-speed self-powered α-Ga2O3 photodetectors with solar-blind UV/visible dual-band photodetection by simple processes for the applications of multiple-target tracking, imaging, machine vision and communication.
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12

Rogalski, Antoni, Zbigniew Bielecki, Janusz Mikołajczyk, and Jacek Wojtas. "Ultraviolet Photodetectors: From Photocathodes to Low-Dimensional Solids." Sensors 23, no. 9 (May 2, 2023): 4452. http://dx.doi.org/10.3390/s23094452.

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The paper presents the long-term evolution and recent development of ultraviolet photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly described. Then the different types of detectors are presented, starting with the older photoemission detectors through photomultipliers and image intensifiers. More attention is paid to silicon and different types of wide band gap semiconductor photodetectors such as AlGaN, SiC-based, and diamond detectors. Additionally, Ga2O3 is considered a promising material for solar-blind photodetectors due to its excellent electrical properties and a large bandgap energy. The last part of the paper deals with new UV photodetector concepts inspired by new device architectures based on low-dimensional solid materials. It is shown that the evolution of the architecture has shifted device performance toward higher sensitivity, higher frequency response, lower noise, and higher gain-bandwidth products.
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13

Liu, Zhiyi, Xiaomei Hu, and Mingsheng Long. "High-performances ultraviolet photodetector based on vertical van der Waals heterostructures." Journal of Physics: Conference Series 2383, no. 1 (December 1, 2022): 012037. http://dx.doi.org/10.1088/1742-6596/2383/1/012037.

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High-performance ultraviolet (UV) photodetectors play a very important role in many fields, especially in the military, biomedical and other fields. [1]In recent years, many studies have realized ultraviolet photodetectors of 2D layered materials, overcome the problems of traditional ultraviolet detectors that are large and use high voltages. [1]Up to now, most of these works use atomically thin layers and simple p-n van der Waals (vdW) heterostructures, which have difficulty meeting the conditions of high sensitivity and ultrafast response at the same time. we report the double p-n van der Waals (vdW) heterostructure built on a large electrode. The two p-n junctions connected in parallel were proven to be able to effectively separate photo-generated carriers and suitable for ultraviolet light. This new type of photodetector exhibits competitive performance, including high R up to 254.8 A/W under UV light, and fast photoresponse τr = 7.9 μs and τd = 3.9 μs. These results provide an ideal platform for realizing highly sensitive UV photodetectors.
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14

Duan, Li, Feng Wei, Jibin Fan, Xiaochen Yu, Wenxue Zhang, Yan Zhang, Fengni He, Xiaojiao Cheng, and Ye Tian. "Low-Cost Fabrication of UV Photodetector Based on Hexagonal Nanocrystal ZnO:Al/p-Si Heterojunction." Nano 11, no. 02 (February 2016): 1650019. http://dx.doi.org/10.1142/s1793292016500193.

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ZnO:Al/p-Si heterojunction was fabricated by depositing a hexagonal nanocrystal ZnO:Al film on p-type Si substrate using a simple chemical bath deposition (CBD) method. The vertically aligned hexagonal ZnO:Al nanocrystals reduce the grain boundary scattering and provide good conductivity. The ZnO:Al/Si heterojunction shows obvious photocurrent under ultraviolet (UV) illumination. A high UV-to-visible rejection ratio of the ZnO:Al/Si heterojunction indicates that the hexagonal nanocrystal ZnO:Al film is a good material for fabricating UV photodetectors. Furthermore, the response speed of the photodetector based on ZnO:Al hexagonal nanocrystal film is faster than that of most previously reported photodetectors based on ZnO:Al nanorods. We infer it is because the ZnO:Al nanocrystals film has a smaller surface to volume ratio than the ZnO:Al nanorod array.
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Li, Eric Y., Andrew F. Zhou, and Peter X. Feng. "High-Performance Nanoplasmonic Enhanced Indium Oxide—UV Photodetectors." Crystals 13, no. 4 (April 17, 2023): 689. http://dx.doi.org/10.3390/cryst13040689.

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In this paper, high-performance UV photodetectors have been demonstrated based on indium oxide (In2O3) thin films of approximately 1.5–2 μm thick, synthesized by a simple and quick plasma sputtering deposition approach. After the deposition, the thin-film surface was treated with 4–5 nm-sized platinum (Pt) nanoparticles. Then, titanium metal electrodes were deposited onto the sample surface to form a metal–semiconductor–metal (MSM) photodetector of 50 mm2 in size. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to study the crystal structure of the synthesized In2O3 film. The nanoplasmonic enhanced In2O3-based UV photodetectors were characterized by various UV wavelengths at different radiation intensities and temperatures. A high responsivity of up to 18 A/W was obtained at 300 nm wavelength when operating at 180 °C. In addition, the fabricated prototypes show a thermally stable baseline and excellent repeatability to a wide range of UV lights with low illumination intensity when operating at such a high temperature.
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Ren, Bing, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, and Liwen Sang. "Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates." Applied Sciences 9, no. 14 (July 19, 2019): 2895. http://dx.doi.org/10.3390/app9142895.

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The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage. It is found that a relatively lower growth rate for the GaN epilayer is preferred to improve the performance of the Schottky-type photodetectors due to the better microstructure and surface properties.
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Thompson, Jesse E., Darian Smalley, and Masahiro Ishigami. "Solar-Blind Ultraviolet Photodetectors Based on Vertical Graphene-Hexagonal Boron Nitride Heterostructures." MRS Advances 5, no. 37-38 (2020): 1993–2002. http://dx.doi.org/10.1557/adv.2020.331.

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AbstractPhotodetectors operating in the ultraviolet (UV) play a pivotal role in applications such as ozone monitoring and biosensing. One key factor to successfully implementing such photodetectors is that they must be solar-blind to avoid detecting ambient visible and infrared light. Unfortunately, UV photodetectors based on silicon and other typical semiconductors are not natively solar-blind, since their band gap energies are in the visible range. Hexagonal boron nitride (h-BN) is an example of a wide band gap semiconductor which shows promise for use as the absorbing medium in a UV photodetector device, since its band gap is wide enough to make it inherently insensitive to light in the visible range and above. Here we report on the fabrication and characterization of a graphene-h-BN-heterostructure photodetector which utilizes a vertical geometry, in principle allowing for highly scalable production. We find that our device shows a finite photoresponse to illumination by a 254 nm light source, but not to a 365 nm source, thus suggesting that our device is solar-blind.
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Liu, Yuang, Zesen Su, and Tianyu Yang. "The Recent Progress and State-of-art applications for Ultraviolet Photodetectors." Highlights in Science, Engineering and Technology 5 (July 7, 2022): 94–101. http://dx.doi.org/10.54097/hset.v5i.728.

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Contemporarily, ultraviolet photodetectors have already been successfully applied in many advanced areas, including astronomy, disaster forecasting, fire alarm, marine oil pollution monitoring, biomedical and more. Nowadays, many researchers are focusing on developing the wide bandgap UV photodetectors which possess advantages in fast response speed, high sensitivity, self-power, etc. This paper will discuss principle, types, and component of ultraviolet photodetectors based on information retrieval and literature analysis. Specifically, vacuum UV detectors, solid-state UV detectors and wide bandgap UV photodetectors are demonstrated. According to the analysis, wide bandgap UV photodetectors have better performance in multiple properties but still be limited with several drawbacks, included material problems and design issues. Once the material problems and design issues could be overcome, they could replace the traditional UV photodetectors rapidly, which are able to benefit more relevant areas in both military and civilization. These results shed light on guiding further exploration in UV photodetectors current.
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Liu, Geng, Liang Yao, Ying Liu, Rongdun Hong, Ruijun Zhang, and Feng Zhang. "Study on SiC UV/EUV Coaxial Photodetector." Journal of Physics: Conference Series 2549, no. 1 (July 1, 2023): 012014. http://dx.doi.org/10.1088/1742-6596/2549/1/012014.

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Abstract In this paper, a novel 4H-SiC coaxial p-i-n ultraviolet photodetector with intense photon absorption and high quantum efficiency is studied. The spectral response and electric field distribution of the detector are calculated by TCAD software. The results showed that the innovative 4H-SiC ultraviolet coaxial p-i-n photodetector has a spectral response peak of 0.1998 A/W at 260 nm illumination wavelength and has more than twice response higher than the traditional 4H-SiC p-i-n photodetector, when the illumination wavelength is under 270 nm. The quantum efficiency of the coaxial photodetector reaches 95.3%. Moreover, in the wavelength range of EUV, the 4H-SiC ultraviolet coaxial photodetector shows a relatively high response, while the response is barely observed for the traditional 4H-SiC p-i-n photodetector. For the large area coaxial p-i-n photodetector, the problem of laterally undepleted i layer can be solved by multiple P+-type implanation. The new structure significantly enhances the rate of incident light absorption, prevents the light absorption of the conventional metal electrode and P+ layer, and provides an innovative approach for the construction of ultraviolet photodetectors in the future.
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Monroy, E., F. Calle, J. L. Pau, E. Muñoz, F. Omnès, B. Beaumont, and P. Gibart. "AlGaN-based UV photodetectors." Journal of Crystal Growth 230, no. 3-4 (September 2001): 537–43. http://dx.doi.org/10.1016/s0022-0248(01)01305-7.

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21

Charipar, Kristin, Heungsoo Kim, Alberto Piqué, and Nicholas Charipar. "ZnO Nanoparticle/Graphene Hybrid Photodetectors via Laser Fragmentation in Liquid." Nanomaterials 10, no. 9 (August 21, 2020): 1648. http://dx.doi.org/10.3390/nano10091648.

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By combining the enhanced photosensitive properties of zinc oxide nanoparticles and the excellent transport characteristics of graphene, UV-sensitive, solar-blind hybrid optoelectronic devices have been demonstrated. These hybrid devices offer high responsivity and gain, making them well suited for photodetector applications. Here, we report a hybrid ZnO nanoparticle/graphene phototransistor that exhibits a responsivity up to 4 × 104 AW−1 and gain of up to 1.3 × 105 with high UV wavelength selectivity. ZnO nanoparticles were synthesized by pulsed laser fragmentation in liquid to attain a simple, efficient, ligand-free method for nanoparticle fabrication. By combining simple fabrication processes with a promising device architecture, highly sensitive ZnO nanoparticle/graphene UV photodetectors were successfully demonstrated.
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Zeng, Zhi, Dongbo Wang, Jinzhong Wang, Shujie Jiao, Donghao Liu, Bingke Zhang, Chenchen Zhao, et al. "Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction." Crystals 11, no. 2 (February 8, 2021): 169. http://dx.doi.org/10.3390/cryst11020169.

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The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.
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23

Khan, Sulaiman, David Newport, and Stéphane Le Calvé. "Gas Detection Using Portable Deep-UV Absorption Spectrophotometry: A Review." Sensors 19, no. 23 (November 28, 2019): 5210. http://dx.doi.org/10.3390/s19235210.

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Several gas molecules of environmental and domestic significance exhibit a strong deep-UV absorption. Therefore, a sensitive and a selective gas detector based on this unique molecular property (i.e., absorption at a specific wavelength) can be developed using deep-UV absorption spectrophotometry. UV absorption spectrometry provides a highly sensitive, reliable, self-referenced, and selective approach for gas sensing. This review article addresses the recent progress in the application of deep-UV absorption for gas sensing owing to its inherent features and tremendous potentials. Applications, advancements, and challenges related to UV emission sources, gas cells, and UV photodetectors are assessed and compared. We present the relevant theoretical aspects and challenges associated with the development of portable sensitive spectrophotometer. Finally, the applications of UV absorption spectrometry for ozone, NO2, SO2, and aromatic organic compounds during the last decades are discussed and compared. A portable UV absorption spectrophotometer can be developed by using LEDs, hollow core waveguides (HCW), and UV photodetectors (i.e., photodiodes). LED provides a portable UV emission source with low power input, low-intensity drifts, low cost, and ease of alignment. It is a quasi-chromatic UV source and covers the absorption band of molecules without optical filters for absorbance measurement of a target analyte. HCWs can be applied as a miniature gas cell for guiding UV radiation for measurement of low gas concentrations. Photodiodes, on the other hand, offer a portable UV photodetector with excellent spectral selectivity with visible rejection, minimal dark current, linearity, and resistance against UV-aging.
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Shahid, Muhammad, Tian Jun Li, Meng Fei Zhang, Jing Cheng, Yan Xing, and Wei Pan. "Transparent Ultraviolet Photodetectors Based on Ga2O3 Electrospun Nanowires." Solid State Phenomena 281 (August 2018): 710–15. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.710.

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Ultraviolet photodetectors (PDs) based on low-dimensional (LD) gallium oxide nanofibers were synthesized and assembled by a low cost and scalable electrospinning method. Highly uniaxially aligned nanofibers were used to assemble photodetectors. Photoconductive investigations indicate that the prepared photodetectors (PDs) are highly sensitive to ultraviolet (UV) light. The prepared photodetectors have shown a high photosensitivity (103), fast photoresponse, excellent stability, and reproducibility under the illumination of UV light 254 nm. These electrospun nanofibers have also shown a high transparency (<85%) in the visible light 400-700 nm range. The high transparency of these nanobelts demonstrates their use for invisible UV photosensors.
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Yuan, Dingcheng, Lingyu Wan, Haiming Zhang, Jiang Jiang, Boxun Liu, Yongsheng Li, Zihan Su, and Junyi Zhai. "An Internal-Electrostatic-Field-Boosted Self-Powered Ultraviolet Photodetector." Nanomaterials 12, no. 18 (September 15, 2022): 3200. http://dx.doi.org/10.3390/nano12183200.

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Self-powered photodetectors are of significance for the development of low-energy-consumption and environment-friendly Internet of Things. The performance of semiconductor-based self-powered photodetectors is limited by the low quality of junctions. Here, a novel strategy was proposed for developing high-performance self-powered photodetectors with boosted electrostatic potential. The proposed self-powered ultraviolet (UV) photodetector consisted of an indium tin oxide and titanium dioxide (ITO/TiO2) heterojunction and an electret film (poly tetra fluoroethylene, PTFE). The PTFE layer introduces a built-in electrostatic field to highly enhance the photovoltaic effect, and its high internal resistance greatly reduces the dark current, and thus remarkable performances were achieved. The self-powered UV photodetector with PTFE demonstrated an extremely high on–off ratio of 2.49 × 105, a responsivity of 76.87 mA/W, a response rise time of 7.44 ms, and a decay time of 3.75 ms. Furthermore, the device exhibited exceptional stability from room temperature to 70 °C. Compared with the conventional ITO/TiO2 heterojunction without the PTFE layer, the photoresponse of the detector improved by 442-fold, and the light–dark ratio was increased by 8.40 × 105 times. In addition, the detector is simple, easy to fabricate, and low cost. Therefore, it can be used on a large scale. The electrostatic modulation effect is universal for various types of semiconductor junctions and is expected to inspire more innovative applications in optoelectronic and microelectronic devices.
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Zhu, Mengru, Zhiwei Zhao, Yong Fang, Zhengjin Weng, and Wei Lei. "A Flexible Solar-blind Ultraviolet Photodetector based on Carbon Nanodots." Journal of Physics: Conference Series 2065, no. 1 (November 1, 2021): 012016. http://dx.doi.org/10.1088/1742-6596/2065/1/012016.

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Abstract A flexible solar-blind ultraviolet (UV) photodetector based on the carbon nanodots (CNDs) was fabricated on a polyethylene terephthalate (PET) substrate. The responsivity of 1.2 mA/W is obtained for 10 V applied bias under 254 nm illumination. Further, bending tests were carried out under the 0.2% strain, and the results showed that this flexible photodetector had stable characteristics and no obviously decrease of the photocurrent. The bending performances exhibit excellent potential for the fabrication of smart and flexible photodetectors.
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Basyooni, Mohamed A., A. E. H. Gaballah, Mohammed Tihtih, Issam Derkaoui, Shrouk E. Zaki, Yasin Ramazan Eker, and Şule Ateş. "Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors." Materials 16, no. 7 (March 30, 2023): 2766. http://dx.doi.org/10.3390/ma16072766.

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Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON–OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm−2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord’s methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I–V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.
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Li, Haixia, Bingyi Liu, Weiwei Lin, Yang Liu, Yu Wang, Zhongyuan Zhang, Lun Xiong, and Jiayou Tao. "Enhancing Performance of Broadband Photodetectors Based on Perovskite CsPbBr3 Nanocrystals/ZnO-Microwires Heterostructures." Science of Advanced Materials 13, no. 9 (September 1, 2021): 1748–55. http://dx.doi.org/10.1166/sam.2021.4072.

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A broadband photodetector response in the ultraviolet (UV)-to-green range (up to 530 nm) based on perovskite CsPbBr3 nanocrystals (NCs)/ZnO-microwires (MWs) heterostructures was realized via a convenient spin-coating method. Under UV light (365 nm) illumination, compared with a bare-ZnO-MW-based photodetector, the CsPbBr3-NCs/ZnO-MWs-heterostructure-based photodetector exhibited a faster photoresponse (<0.1 s) and higher current responsivity (93.50 AW−1), external quantum efficiency (3399%), and detectivity (4.4 × 1010). In addition, the photodetector based on CsPbBr3-NCs/ZnO-MWs heterostructures also exhibited a very fast photoresponse to green light (530 nm). These can be ascribed to the strong light-trapping ability of CsPbBr3 NCs and high charge-transfer efficiency at the CsPbBr3-NCs/ZnO-MWs-heterojunction interface due to the built-in field, which facilitates the spatial separation of the photogenerated carriers. Therefore, this work will develop perovskite/ZnO nanomaterials as promising building blocks for broadband photodetectors and wider optoelectronic applications.
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Shao, Dali, Mingpeng Yu, Jie Lian, and Shayla Sawyer. "Ultraviolet Photodetector Fabricated from 3D WO3 Nanowires/Reduced Graphene Oxide Composite Material." MRS Proceedings 1659 (2014): 193–98. http://dx.doi.org/10.1557/opl.2014.211.

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ABSTRACTAn Ultraviolet (UV) photodetector with high responsivity and relative fast response speed was fabricated from three dimensional WO3 nanowires/reduced graphene oxide (3D WO3 NWs/RGO) composite materials. The 3D WO3 NDs/GN composite was synthesized using a facile three-step synthesis. First, the Na2WO4/Graphene Oxide (GO) precursor was synthesized by homogeneous precipitation. Second, the Na2WO4/GO precursor was transformed into H2WO4/GO composites by acidification. Finally, the H2WO4/GO composites were reduced to 3D WO3 NWs/RGO via hydrothermal reduction process. A maximum photoresponsivity of 4.2 A/W at 374 nm was observed under 20 V bias. The UV photodetector showed relative fast transient response, which is at least 2 orders of magnitude faster than UV photodetectors fabricated from WO3 nanowires. The good photoresponsivity and fast transient response are attributed to improved carrier transport and collection efficiency through graphene.
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Butun, Serkan, Neval A. Cinel, and Ekmel Ozbay. "LSPR enhanced MSM UV photodetectors." Nanotechnology 23, no. 44 (October 18, 2012): 444010. http://dx.doi.org/10.1088/0957-4484/23/44/444010.

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31

Thungström, G., E. Dubaric, and B. G. Svensson. "Processing of silicon UV-photodetectors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 460, no. 1 (March 2001): 165–84. http://dx.doi.org/10.1016/s0168-9002(00)01111-6.

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32

Anikin, M. M., A. N. Andreev, S. N. Pyatko, N. S. Savkina, A. M. Strelchuk, A. L. Syrkin, and V. E. Chelnokov. "UV photodetectors in 6HSiC." Sensors and Actuators A: Physical 33, no. 1-2 (May 1992): 91–93. http://dx.doi.org/10.1016/0924-4247(92)80233-s.

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33

Peng, Shi-Ming, Yan-Kuin Su, Liang-Wen Ji, Cheng-Zhi Wu, Wei-Bin Cheng, and Wan-Chun Chao. "ZnO Nanobridge Array UV Photodetectors." Journal of Physical Chemistry C 114, no. 7 (January 28, 2010): 3204–8. http://dx.doi.org/10.1021/jp909299y.

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34

Lee, Hanleem, and Young Tea Chun. "Ferroelectric Induced UV Light-Responsive Memory Devices with Low Dark Current." Electronics 10, no. 16 (August 7, 2021): 1897. http://dx.doi.org/10.3390/electronics10161897.

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We developed solution-processed hybrid photodetectors with a poly (9-vinylcarbazole)/zinc oxide nanoparticle photoactive layer and a poly (vinylidene fluoride-co-trifluoroethylene) ferroelectric copolymer buffer layer on flexible plastic substrates. The presence of a ferroelectric-poling interface layer significantly enhanced the charge transfer and responsivity of the photodetectors under ultraviolet (UV, 365 nm) light exposure. The responsivity of the device reached 250 mA/W at a reverse bias of 5 V and incident light intensity of 27.5 μW/cm2. This responsivity was four times higher than that of a device without the ferroelectric copolymer layer (64 mA/W) under the same conditions. The response time of the device to incident UV light also improved from 322 to 34 ms with the addition of the ferroelectric copolymer layer. In addition, the flexible device exhibited a stable performance in an air environment up to a maximum strain of 0.3 under bending stress. Finally, a UV-light-responsive memory device was successfully fabricated by using the developed hybrid photodetector and liquid crystals. This device showed a colour change from white to black upon UV illumination, and the on-state of the device was maintained for 30 s without light exposure owing to the polarization of poly (vinylidene fluoride-co-trifluoroethylene).
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35

Yildirim, Fatma, Zeynep Orhan, Saba Khalili, Hossein Mahmoudi Chenari, and Ş. Aydoğan. "A comparative study of the ZnO Fibers-based photodetectors on n-Si and p-Si." Journal of Physics D: Applied Physics 55, no. 39 (July 18, 2022): 395102. http://dx.doi.org/10.1088/1361-6463/ac7f04.

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Abstract The ZnO fibers (Fs)/p-Si (labeled D1) and ZnO Fs/n-Si (labeled D2) photodetector heterojunctions were fabricated and both devices gave a clear rectifying I–V characteristic with a high rectifying ratio, in the dark. At zero bias, D1 showed self-driven characteristics, while D2 had not and D1 was found to be more stable than D2 in time-dependent measurements. Optoelectronics results revealed that D1 had high sensitivity to both visible and excellent stability after 20 days. At zero bias, the ON/OFF ratio of the D1 photodetector was as high as 33 650 and in the dark, a rectification ratio of 67 400 within ±2 V was obtained for the D1 device. The maximum responsivities of the devices was ∼0.8 mA W−1, and their detectivity was ∼109 Jones. Furthermore, the ZnO Fs/p-Si (labeled D3) and ZnO Fs/n-Si (labeled D3) photodetectors yielded excellent response to 365 nm and 395 nm UV light (10 mW cm−2). Responsivity, detectivity (D), and external quantum efficiency values reached as high as 5.28 A W−1, 1.02 × 1013 Jones, and %16.6, respectively under 365 nm UV light. The excellent responses of the photodetectors to visible and UV light were attributed to the oxygen vacancies in ZnO and the formation of electron–hole pairs by the light effect and their separation by the electric field in the device formed between ZnO and Si.
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Kim, Hyunki, Gyeong-Nam Lee, and Joondong Kim. "Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors." Journal of Nanomaterials 2018 (July 2, 2018): 1–8. http://dx.doi.org/10.1155/2018/4178989.

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A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.
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Chong, Haining, Huijun Yang, Weiyou Yang, Jinju Zheng, Minghui Shang, Zuobao Yang, Guodong Wei, and Fengmei Gao. "SiC Nanowire Film Photodetectors: A Promising Candidate Toward High Temperature Photodetectors." Journal of Nanoscience and Nanotechnology 16, no. 4 (April 1, 2016): 3796–801. http://dx.doi.org/10.1166/jnn.2016.11875.

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In this study, UV photodetectors (PDs) based on SiC nanowire films have been successfully prepared by a simple and low-cost drip-coating method followed by sintering at 500 °C. The corresponding electrical characterizations clearly demonstrate that the SiC nanowire based PD devices can be regarded as a promising candidate for UV PDs. The PDs can exhibit the excellent performances of fast, high sensitivity, linearity, and stable response, which can thus achieve on-line monitoring of weak UV light. Furthermore, the SiC nanowire-based PDs enable us to fabricate detectors working under high temperature as high as 150 °C. The high photosensitivity and rapid photoresponse for the PDs can be attributed to the superior single crystalline quality of SiC nanowires and the ohmic contact between the electrodes and nanowires.
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38

Lin, Haowei, Ao Jiang, Shibo Xing, Lun Li, Wenxi Cheng, Jinling Li, Wei Miao, Xuefei Zhou, and Li Tian. "Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures." Nanomaterials 12, no. 6 (March 10, 2022): 910. http://dx.doi.org/10.3390/nano12060910.

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Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.
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Mondal, Shubham, Ding Wang, Ping Wang, Yuanpeng Wu, Mingtao Hu, Yixin Xiao, Subhajit Mohanty, Tao Ma, Elaheh Ahmadi, and Zetian Mi. "Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN." APL Materials 10, no. 12 (December 1, 2022): 121101. http://dx.doi.org/10.1063/5.0122943.

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The efficient photoelectric conversion based on the ferroelectric property of a material has attracted widespread attention in advanced optoelectronic systems. Such an electrically reconfigurable photovoltaic effect offers a unique opportunity for the development of self-powered ultraviolet (UV) photodetectors for a broad range of applications from the military to human health and the environment. To date, however, the low performance metrics of such photodetectors have hindered their integration with existing platforms. By exploring the unique optoelectronic properties of an ultrawide bandgap nitride ferroelectric (ScAlN), we demonstrate, for the first time, polarization dependent high-performance self-powered deep UV photodetectors. The responsivity at 193 nm illumination reached up to a maximum of 15 mA/W with a detectivity of 1.2 × 1011 Jones at an extremely low illumination intensity of 0.12 mW/cm2. Furthermore, the photodetectors exhibit wake-up free and reconfigurable photo-response, and fast and stable switching response time (<0.06 s) with excellent rejection to UV-A and visible illumination. The significant findings related to the growth, fabrication, and characterization reported in this work construct a viable route to realize unprecedentedly high performance self-powered ferroelectric UV photodetectors toward energy-efficient applications.
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40

Shen, Xuemin, Siyi Chen, Yuhe Liu, Mingming Chen, Han Lei, Jing Cai, Jiayun Su, et al. "Realization of self-powered bidirectional photoresponse in the ultraviolet/visible wavelength region in ferroelectric heterojunctions." Applied Physics Letters 120, no. 9 (February 28, 2022): 091107. http://dx.doi.org/10.1063/5.0080811.

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Broadband and wavelength selective photodetection are of great importance for photodetectors in practical applications, while these two features are generally in conflict with each other in conventional semiconductor heterojunctions. In the current work, CH3NH3PbBr3/PbZr0.52Ti0.48O3 ferroelectric heterojunction photodetectors have been demonstrated to obtain a self-powered bidirectional photoresponse, which realized a broadband and wavelength selective photodetection in the ultraviolet (UV)/visible wavelength region. By a combination of bulk photovoltaic effects of ferroelectric PbZr0.52Ti0.48O3 and built-in electric field at the CH3NH3PbBr3/PbZr0.52Ti0.48O3 heterojunction interface, the photodetectors exhibited a positive sensitivity in the UV spectral range and a negative sensitivity in the visible spectral range. Specifically, the sensitivities were +0.22 mA/W at 340 nm and −0.032 mA/W at 530 nm, both at the bias voltage of 0 V. Notably, the photoresponse polarity in the UV spectral range can be further reversed through electrically polarizing the ferroelectric PbZr0.52Ti0.48O3. The results provided in this work highlight the superiorities of ferroelectric heterojunction photodetectors and open a window for the fabrication of broadband and wavelength selective photodetectors.
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41

Fan, Ming-Ming, Ke-Wei Liu, Xing Chen, Zhen-Zhong Zhang, Bing-Hui Li, and De-Zhen Shen. "A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed." RSC Advances 7, no. 22 (2017): 13092–96. http://dx.doi.org/10.1039/c6ra28736k.

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42

Polat, Emre O., Gabriel Mercier, Ivan Nikitskiy, Eric Puma, Teresa Galan, Shuchi Gupta, Marc Montagut, et al. "Flexible graphene photodetectors for wearable fitness monitoring." Science Advances 5, no. 9 (September 2019): eaaw7846. http://dx.doi.org/10.1126/sciadv.aaw7846.

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Wearable health and wellness trackers based on optical detection are promising candidates for public health uses due to their noninvasive tracking of vital health signs. However, so far, the use of rigid technologies hindered the ultimate performance and form factor of the wearable. Here, we demonstrate a new class of flexible and transparent wearables based on graphene sensitized with semiconducting quantum dots (GQD). We show several prototype wearable devices that are able to monitor vital health signs noninvasively, including heart rate, arterial oxygen saturation (SpO2), and respiratory rate. Operation with ambient light is demonstrated, offering low-power consumption. Moreover, using heterogeneous integration of a flexible ultraviolet (UV)–sensitive photodetector with a near-field communication circuit board allows wireless communication and power transfer between the photodetectors and a smartphone, offering battery-free operation. This technology paves the way toward seamlessly integrated wearables, and empowers the user through wireless probing of the UV index.
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43

Zhou, Jinyuan, Lulu Chen, Youqing Wang, Yongmin He, Xiaojun Pan, and Erqing Xie. "An overview on emerging photoelectrochemical self-powered ultraviolet photodetectors." Nanoscale 8, no. 1 (2016): 50–73. http://dx.doi.org/10.1039/c5nr06167a.

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44

Aggarwal, Neha, and Govind Gupta. "Enlightening gallium nitride-based UV photodetectors." Journal of Materials Chemistry C 8, no. 36 (2020): 12348–54. http://dx.doi.org/10.1039/d0tc03219k.

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This article highlights the emerging demand for gallium nitride (GaN) semiconductor technology that offers superior optoelectronic properties making it suitable for futuristic ultraviolet (UV) photodetection applications.
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45

Chang, Ting-Hao, Shoou-Jinn Chang, Wen-Yin Weng, Chiu-Jung Chiu, and Chi-Yu Wei. "Amorphous Indium–Gallium–Oxide UV Photodetectors." IEEE Photonics Technology Letters 27, no. 19 (October 1, 2015): 2083–86. http://dx.doi.org/10.1109/lpt.2015.2453317.

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46

LIAO, K. J., W. L. WANG, C. Z. CAI, X. S. WANG, and C. Y. KONG. "UV PHOTODETECTORS OF c-BN FILMS." International Journal of Modern Physics B 16, no. 06n07 (March 20, 2002): 1115–19. http://dx.doi.org/10.1142/s0217979202010968.

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Cubic boron nitride films (c-BN) were prepared by sputtering of a hexagonal BN sintered target. The films obtained were characterized by scanning electron microscopy, Infrared absorption spectra and UV-visible transmission spectra. The UV photodetetor devices of c-BN films were fabricated by photolithographic techniques. The devices exhibited a large photocurrent when exposed to light with a wavelength less than 223nm. The results obtained also show that the photoconductive properties closely depend on the deposition conditions. The photoconductive gain for the sample deposited at r. f. power of 300W was greater than that of the sample prepared at r. f. Power of 100W. This can be ascribed to that the carrier lifetime and mobility of the films have been improved.
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47

Östlund, Ludwig, Qin Wang, Romain Esteve, Susanne Almqvist, David Rihtnesberg, Sergey Reshanov, Andy Z. Z. Zhang, et al. "4H- and 6H-SiC UV photodetectors." physica status solidi (c) 9, no. 7 (May 29, 2012): 1680–82. http://dx.doi.org/10.1002/pssc.201100559.

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48

Chan, S. Sm, R. D. McKeag, M. D. Whitfield, and R. B. Jackman. "UV Photodetectors from Thin Film Diamond." Physica Status Solidi (a) 154, no. 1 (March 16, 1996): 445–54. http://dx.doi.org/10.1002/pssa.2211540131.

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49

Hong, Soo Beom, Sangmo Kim, and Hyung Wook Choi. "Improved Performance of Perovskite Deep-Ultraviolet Photodetector Using FAPb(I/Br)3 as Light Absorption Layer." Coatings 13, no. 2 (February 2, 2023): 341. http://dx.doi.org/10.3390/coatings13020341.

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Constitutive engineering by adding halide anions is one effective way to improve the performance of photodetectors by adjusting the bandgap. In this study, a mixed-anion perovskite thin film was facile fabricated by post-processing of a pure FAPbI3 film with a formamidinium bromide (FABr) solution. In addition, the manufactured thin film was used as the light absorption layer, SnO2-SDBS as the electron transport layer, and spiro-OMeTAD as the hole injection layer to fabricate a deep ultraviolet(UV) photodetector. The device exhibited a response of 43.8 mA/W−1, a detectability of 3.56 × 1013 Jones, and an external quantum efficiency of 38%. Therefore, this study is promising for various applications in the deep-UV wavelength region.
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Jin, Yimin, Shujie Jiao, Dongbo Wang, Shiyong Gao, and Jinzhong Wang. "Enhanced UV Photoresponsivity of ZnO Nanorods Decorated with Ag2S/ZnS Nanoparticles by Successive Ionic Layer Adsorption and Reaction Method." Nanomaterials 11, no. 2 (February 11, 2021): 461. http://dx.doi.org/10.3390/nano11020461.

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Recently, different kinds of energy band structures have been utilized to improve the photoelectric properties of zinc oxide (ZnO). In this work, ZnO nanorods were prepared by the hydrothermal method and then decorated with silver sulfide (Ag2S)/zinc sulfide (ZnS) via two-step successive ionic layer adsorption and reaction method. The photoelectric properties of nanocomposites are investigated. The results show that ZnO decorated with Ag2S/ZnS can improve the photocurrent of photodetectors from 0.34 to 0.56 A at bias of 9 V. With the immersion time increasing from 15 to 60 minutes, the photocurrent of photodetectors increases by 0.22 A. The holes in the valence band of ZnO can be transferred to the valence band of ZnS and Ag2S, which promotes the separation and suppresses the recombination of hole-electron pairs generated in ZnO. Moreover, electrons excited by ultraviolet (UV) light in Ag2S can also be injected into the conduction band of ZnO, which causes the photocurrent to increase more than the ZnO photodetector.
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