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Journal articles on the topic 'Van der Waals heterojunctions'

Author: Grafiati

Published: 6 September 2023

Last updated: 31 July 2025

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1

Lei, Xunyong. "Optimization of Mechanically Assembled Van Der Waals Heterostructure Based On Solution Immersion and Hot Plate Heating." Journal of Physics: Conference Series 2152, no. 1 (2022): 012007. http://dx.doi.org/10.1088/1742-6596/2152/1/012007.

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Abstract Layers of two-dimensional material are bonded together by van der Waals force, as a result, there is no need to take into consideration of the lattice mismatch in the formation of heterojunction, which is endowed with the characteristics of simple stacking in method, free of limitation to the type of materials and diverse changes. However, although the Van Der Waals heterojunction is relatively easy to stack, it is still difficult to generate inter-layer coupling between the thin crystal layers that form the Van Der Waals heterojunction. In most cases, the stacked heterojunction is si

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2

Wang, Shuai, Xiaoqiu Tang, Ezimetjan Alim, et al. "Type-II GaSe/MoS2 van der Waals Heterojunction for High-Performance Flexible Photodetector." Crystals 13, no. 11 (2023): 1602. http://dx.doi.org/10.3390/cryst13111602.

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In recent years, two-dimensional (2D) type-II van der Waals (vdW) heterojunctions have emerged as promising candidates for high-performance photodetectors. However, direct experimental evidence confirming the enhancement of photoelectric properties by the heterojunction’s type and structure remains scarce. In this work, we present flexible photodetectors based on individual GaSe and MoS2, as well as a vertically stacked type-II GaSe/MoS2 vdW heterojunction on polyethylene terephthalate (PET) substrate. These devices demonstrate outstanding responsivities and rapid response speeds, ensuring sta

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3

Guo, Junnan, Xinyue Dai, Lishu Zhang, and Hui Li. "Electron Transport Properties of Graphene/WS2 Van Der Waals Heterojunctions." Molecules 28, no. 19 (2023): 6866. http://dx.doi.org/10.3390/molecules28196866.

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Van der Waals heterojunctions of two-dimensional atomic crystals are widely used to build functional devices due to their excellent optoelectronic properties, which are attracting more and more attention, and various methods have been developed to study their structure and properties. Here, density functional theory combined with the nonequilibrium Green’s function technique has been used to calculate the transport properties of graphene/WS2 heterojunctions. It is observed that the formation of heterojunctions does not lead to the opening of the Dirac point of graphene. Instead, the respective

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4

Jiang, Xixi, Min Zhang, Liwei Liu, et al. "Multifunctional black phosphorus/MoS2 van der Waals heterojunction." Nanophotonics 9, no. 8 (2020): 2487–93. http://dx.doi.org/10.1515/nanoph-2019-0549.

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AbstractThe fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functiona

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5

Han, Zeqi. "2D semiconductor Van Der Waals heterojunction applications." Highlights in Science, Engineering and Technology 87 (March 26, 2024): 209–13. http://dx.doi.org/10.54097/fffa0369.

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As the demand for new energy sources continues to grow, the market value of solar power, a key component of new energy, is also expanding. Van der Waals (vdW) heterojunctions made from two-dimensional (2D) semiconductors especially transition metal dichalcogenide (TMD), demonstrates immense potential in terms of the portability and efficiency of photovoltaic devices. Additionally, it shows great promise in the field of novel miniature high-speed photoelectric detectors. It offers multiple benefits, including high carrier mobility, tunable optical and electrical properties, enhanced optical pro

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6

Luo, Hao, Bolun Wang, Enze Wang, Xuewen Wang, Yufei Sun, and Kai Liu. "High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions." Crystals 9, no. 6 (2019): 315. http://dx.doi.org/10.3390/cryst9060315.

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Van der Waals heterojunctions based on transition metal dichalcogenides (TMDs) show promising potential in optoelectronic devices, due to the ultrafast separation of photoexcited carriers and efficient generation of the photocurrent. Herein, this study demonstrated a high-responsivity photovoltaic photodetector based on a MoTe2/MoSe2 type-II heterojunction. Due to the interlayer built-in potential, the MoTe2/MoSe2 heterojunction shows obvious photovoltaic behavior and its photoresponse can be tuned by the gate voltage due to the ultrathin thickness of the heterojunction. This self-powered phot

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7

Yan, Y., Z. Zeng, M. Huang, and P. Chen. "Van der waals heterojunctions for catalysis." Materials Today Advances 6 (June 2020): 100059. http://dx.doi.org/10.1016/j.mtadv.2020.100059.

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8

Yao, Jiandong, and Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection." Journal of Applied Physics 131, no. 16 (2022): 161101. http://dx.doi.org/10.1063/5.0087503.

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Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been t

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9

Yao, Jiandong, and Guowei Yang. "Van der Waals heterostructures based on 2D layered materials: Fabrication, characterization, and application in photodetection." Journal of Applied Physics 131, no. 16 (2022): 161101. http://dx.doi.org/10.1063/5.0087503.

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Construction of heterostructures has provided a tremendous degree of freedom to integrate, exert, and extend the features of various semiconductors, thereby opening up distinctive opportunities for the upcoming modern optoelectronics. The abundant physical properties and dangling-bond-free interface have enabled 2D layered materials serving as magical “Lego blocks” for building van der Waals heterostructures, which bring about superior contact quality (atomically sharp and distortionless) and the combination of functional units with various merits. Therefore, these heterostructures have been t

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10

Yang, Fan, Pascal Boulet, and Marie-Christine Record. "DFT Investigation of a Direct Z-Scheme Photocatalyst for Overall Water Splitting: Janus Ga2SSe/Bi2O3 Van Der Waals Heterojunction." Materials 18, no. 7 (2025): 1648. https://doi.org/10.3390/ma18071648.

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Constructing van der Waals heterojunctions with excellent properties has attracted considerable attention in the field of photocatalytic water splitting. In this study, four patterns, coined A, B, C, and D of Janus Ga2SSe/Bi2O3 van der Waals (vdW) heterojunctions with different stacking modes, were investigated using first-principles calculations. Their stability, electronic structure, and optical properties were analyzed in detail. Among these, patterns A and C heterojunctions demonstrate stable behavior and operate as direct Z-scheme photocatalysts, exhibiting band gaps of 1.83 eV and 1.62 e

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11

Kong, Xiangyuan, Longwen Cao, Yuxing Shi, Zhouze Chen, Weilong Shi, and Xin Du. "Construction of S-Scheme 2D/2D Crystalline Carbon Nitride/BiOIO3 van der Waals Heterojunction for Boosted Photocatalytic Degradation of Antibiotics." Molecules 28, no. 13 (2023): 5098. http://dx.doi.org/10.3390/molecules28135098.

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Utilization of semiconductor photocatalyst materials to degrade pollutants for addressing environmental pollution problems has become a research focus in recent years. In this work, a 2D/2D S-scheme crystalline carbon nitride (CCN)/BiOIO3 (BOI) van der Waals heterojunction was successfully constructed for effectively enhancing the degradation efficiency of antibiotic contaminant. The as-synthesized optimal CCN/BOI-3 sample exhibited the highest efficiency of 80% for the photo-degradation of tetracycline (TC, 20 mg/L) after 120 min visible light irradiation, which was significantly higher than

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12

Yu, Junbo, Guiming Ba, Fuhong Bi, Huilin Hu, Jinhua Ye, and Defa Wang. "Constructing a Ta3N5/Tubular Graphitic Carbon Nitride Van Der Waals Heterojunction for Enhanced Photocatalytic Hydrogen Production." Catalysts 15, no. 7 (2025): 691. https://doi.org/10.3390/catal15070691.

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Constructing a heterojunction is considered one of the most effective strategies for enhancing photocatalytic activity. Herein, we employ Ta3N5 and tubular graphitic carbon nitride (TCN) to construct a Ta3N5/TCN van der Waals heterojunction via electrostatic self-assembly for enhanced photocatalytic H2 production. SEM and TEM results show that Ta3N5 particles (~300 nm in size) are successfully anchored onto the surface of TCN. The light absorption capability of the Ta3N5/TCN heterojunction is between those of Ta3N5 and TCN. The strong interaction between Ta3N5 and TCN with different energy str

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13

Chen, Xin, Wei-guo Pan, Rui-tang Guo, Xing Hu, Zhe-xu Bi, and Juan Wang. "Recent progress on van der Waals heterojunctions applied in photocatalysis." Journal of Materials Chemistry A 10, no. 14 (2022): 7604–25. http://dx.doi.org/10.1039/d2ta00500j.

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14

Xia, Wanshun, Liping Dai, Peng Yu, et al. "Recent progress in van der Waals heterojunctions." Nanoscale 9, no. 13 (2017): 4324–65. http://dx.doi.org/10.1039/c7nr00844a.

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15

Sun, Yinchang, Liming Xie, Zhao Ma, et al. "High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction." Nanomaterials 12, no. 3 (2022): 371. http://dx.doi.org/10.3390/nano12030371.

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Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In additi

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16

Di Bartolomeo, Antonio. "Emerging 2D Materials and Their Van Der Waals Heterostructures." Nanomaterials 10, no. 3 (2020): 579. http://dx.doi.org/10.3390/nano10030579.

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Two-dimensional (2D) materials and their van der Waals heterojunctions offer the opportunity to combine layers with different properties as the building blocks to engineer new functional materials for high-performance devices, sensors, and water-splitting photocatalysts. A tremendous amount of work has been done thus far to isolate or synthesize new 2D materials as well as to form new heterostructures and investigate their chemical and physical properties. This article collection covers state-of-the-art experimental, numerical, and theoretical research on 2D materials and on their van der Waal

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17

Yang, Yaxiao, and Zhiguo Wang. "A two-dimensional MoS2/C3N broken-gap heterostructure, a first principles study." RSC Advances 9, no. 34 (2019): 19837–43. http://dx.doi.org/10.1039/c9ra02935d.

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18

Zhu, Yonghao, Wei-Hai Fang, Angel Rubio, Run Long, and Oleg V. Prezhdo. "The twist angle has weak influence on charge separation and strong influence on recombination in the MoS₂/WS₂ bilayer: ab initio quantum dynamics." Journal of Materials Chemistry A 10, no. 15 (2022): 8324–33. http://dx.doi.org/10.1039/d1ta10788g.

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19

Li, Longhua, and Weidong Shi. "Tuning electronic structures of Sc2CO2/MoS2 polar–nonpolar van der Waals heterojunctions: interplay of internal and external electric fields." Journal of Materials Chemistry C 5, no. 32 (2017): 8128–34. http://dx.doi.org/10.1039/c7tc02384g.

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20

Wang, Yong, Chengxin Zeng, Yichen Liu, et al. "Constructing Heterogeneous Photocatalysts Based on Carbon Nitride Nanosheets and Graphene Quantum Dots for Highly Efficient Photocatalytic Hydrogen Generation." Materials 15, no. 15 (2022): 5390. http://dx.doi.org/10.3390/ma15155390.

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Although graphitic carbon nitride nanosheets (CNs) with atomic thickness are considered as promising materials for hydrogen production, the wide band gap (3.06 eV) and rapid recombination of the photogenerated electron–hole pairs impede their applications. To address the above challenges, we synergized atomically thin CNs and graphene quantum dots (GQDs), which were fabricated as 2D/0D Van der Waals heterojunctions, for H2 generation in this study. The experimental characterizations indicated that the addition of GQDs to the π-conjugated system of CNs can expand the visible light absorption ba

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21

Katerynchuk, V. M., O. S. Litvin, Z. R. Kudrynskyi, Z. D. Kovalyuk, I. G. Tkachuk, and B. V. Kushnir. "Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe." Фізика і хімія твердого тіла 17, no. 4 (2016): 507–10. http://dx.doi.org/10.15330/pcss.17.4.507-510.

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We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga2O3 on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0,74 - 1,0 µm.

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22

Wang, Cong, Shengxue Yang, Wenqi Xiong, et al. "Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions." Physical Chemistry Chemical Physics 18, no. 40 (2016): 27750–53. http://dx.doi.org/10.1039/c6cp04752a.

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23

Liu, Bingtong, Jin Wang, Shuji Zhao, et al. "Negative friction coefficient in microscale graphite/mica layered heterojunctions." Science Advances 6, no. 16 (2020): eaaz6787. http://dx.doi.org/10.1126/sciadv.aaz6787.

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The friction of a solid contact typically shows a positive dependence on normal load according to classic friction laws. A few exceptions were recently observed for nanoscale single-asperity contacts. Here, we report the experimental observation of negative friction coefficient in microscale monocrystalline heterojunctions at different temperatures. The results for the interface between graphite and muscovite mica heterojunction demonstrate a robust negative friction coefficient both in loading and unloading processes. Molecular dynamics simulations reveal that the underlying mechanism is a sy

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24

Zhou, Hong-Jun, Dong-Hui Xu, Qing-Hong Yang, Xiang-Yang Liu, Ganglong Cui, and Laicai Li. "Rational design of monolayer transition metal dichalcogenide@fullerene van der Waals photovoltaic heterojunctions with time-domain density functional theory simulations." Dalton Transactions 50, no. 19 (2021): 6725–34. http://dx.doi.org/10.1039/d1dt00291k.

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25

Wang, Biao, Xukai Luo, Junli Chang, Xiaorui Chen, Hongkuan Yuan, and Hong Chen. "Efficient charge separation and visible-light response in bilayer HfS2-based van der Waals heterostructures." RSC Advances 8, no. 34 (2018): 18889–95. http://dx.doi.org/10.1039/c8ra03047b.

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26

Browning, Robert, Paul Plachinda, Prasanna Padigi, Raj Solanki, and Sergei Rouvimov. "Growth of multiple WS2/SnS layered semiconductor heterojunctions." Nanoscale 8, no. 4 (2016): 2143–48. http://dx.doi.org/10.1039/c5nr08006a.

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27

Liu, B., X. X. Ren, Xian Zhang, Ping Li, Y. Dong, and Zhi-Xin Guo. "Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions." Applied Physics Letters 122, no. 15 (2023): 152408. http://dx.doi.org/10.1063/5.0139076.

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Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, nonvolatile magnetic random access memories, and spin logics. Although MTJs composed of multilayer vdW magnetic homojunction have been extensively investigated, the ones composed of vdW magnetic heterojunction are still to be explored. Here, we use first-principles approaches to reveal that the magnetic heterojunction MTJs have much more distinguishable TMR values than the homojunctio

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28

Hu, Wei, and Jinlong Yang. "Two-dimensional van der Waals heterojunctions for functional materials and devices." Journal of Materials Chemistry C 5, no. 47 (2017): 12289–97. http://dx.doi.org/10.1039/c7tc04697a.

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Two-dimensional (2D) van der Waals heterojunctions combining the electronic structures of such 2D materials have been predicted theoretically and synthesized experimentally to expect more new properties and potential applications far beyond corresponding 2D materials.

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29

Sun, Cuicui, and Meili Qi. "Hybrid van der Waals heterojunction based on two-dimensional materials." Journal of Physics: Conference Series 2109, no. 1 (2021): 012012. http://dx.doi.org/10.1088/1742-6596/2109/1/012012.

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Abstract Since the discovery of graphene, two-dimensional (2D) layered materials have always been the focus of material research. The layers of 2D materials are covalent bonds, and the layers are weakly bonded to adjacent layers through van der Waals (vdW) interactions. Since any dangling-bond-free surface could be combined with another material through vdW forces, the concept can be extended. This can refer to the integration of 2D materials with any other non-2D materials through non-covalent interactions. The emerging mixed-dimensional (2D+nD, where n is 0, 1 or 3) heterostructure devices h

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Fukai, Masaya, Noriyuki Urakami, and Yoshio Hashimoto. "Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction." Coatings 11, no. 12 (2021): 1485. http://dx.doi.org/10.3390/coatings11121485.

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Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe5 films and the formation of heterojunctions. Hall effect measurements showed p-type conductivity. The activation energies estimated from the temperature dependence of the carrier concentration were seen to be 0.17 eV and 0.12 eV, at approximately 300 and 400 K, respectively. It was observed that carrier generation behavior changes at the critical temperature of

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31

Yeh, Chao-Hui, Zheng-Yong Liang, Yung-Chang Lin, et al. "Scalable van der Waals Heterojunctions for High-Performance Photodetectors." ACS Applied Materials & Interfaces 9, no. 41 (2017): 36181–88. http://dx.doi.org/10.1021/acsami.7b10892.

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32

Mondal, Chiranjit, Sourabh Kumar, and Biswarup Pathak. "Topologically protected hybrid states in graphene–stanene–graphene heterojunctions." Journal of Materials Chemistry C 6, no. 8 (2018): 1920–25. http://dx.doi.org/10.1039/c7tc05212j.

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33

Mao, Yuliang, Zheng Guo, Jianmei Yuan, and Tao Sun. "1D/2D van der Waals Heterojunctions Composed of Carbon Nanotubes and a GeSe Monolayer." Nanomaterials 11, no. 6 (2021): 1565. http://dx.doi.org/10.3390/nano11061565.

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Based on first-principles calculations, we propose van der Waals (vdW) heterojunctions composed of one-dimensional carbon nanotubes (CNTs) and two-dimensional GeSe. Our calculations show that (n,0)CNT/GeSe (n = 5–11) heterojunctions are stable through weak vdW interactions. Among these heterojunctions, (n,0)CNT/GeSe (n = 5–7) exhibit metallic properties, while (n,0)CNT/GeSe (n = 8–11) have a small bandgap, lower than 0.8 eV. The absorption coefficient of (n,0)CNT/GeSe (n = 8–11) in the ultraviolet and infrared regions is around 105 cm−1. Specifically, we found that (11,0)CNT/GeSe exhibits type

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Wei, Yiyang, Changyong Lan, Shuren Zhou, and Chun Li. "Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions." Applied Sciences 13, no. 19 (2023): 11037. http://dx.doi.org/10.3390/app131911037.

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Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The passivated surface of 2D materials enables the fabrication of van der Waals (vdW) heterojunctions by integrating them with various other materials, such as nanowires, nanosheets and bulk materials. Heterojunction photodetectors, specifically those composed of 2D materials and silicon (Si), have attracted considerable interest due to the well-establi

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Yan, Shenlang, Hui Li, Chaofei Liu, Shaohui Xiang, and Mengqiu Long. "Strain regulation of the photoelectric performance of 2D InSe–AlAs vdW heterojunction: a DFT study." Journal of Physics D: Applied Physics 58, no. 7 (2024): 075002. https://doi.org/10.1088/1361-6463/ad97c7.

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Abstract Two-dimensional van der Waals heterojunctions (vdWs) have already garnered extensive and significant attention due to the excellent properties of smooth heterointerface, tunable band gap, and high carrier mobility. Inspired by the successful formation of vdWs heterojunctions, the electronic structure and photoelectric properties of devices based on InSe–AlAs vdW heterojunction are deeply and systematacially studied by using density-functional theory combined with the non equilibrium Green’s function approach. Six special configurations of InSe–AlAs vdW heterojunction were established

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Bafekry, Asadollah, Daniela Gogova, Mohamed M. Fadlallah, et al. "Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials." Physical Chemistry Chemical Physics 23, no. 8 (2021): 4865–73. http://dx.doi.org/10.1039/d0cp06213h.

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The electronic and optical properties of vertical heterostructures (HTSs) and lateral heterojunctions (HTJs) between (B,N)-codoped graphene (dop@Gr) and graphene (Gr), C<sub>3</sub>N, BC<sub>3</sub> and h-BN monolayers are investigated using van der Waals density functional theory calculations.

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Liu, Jie, Yaguang Guo, Fancy Qian Wang, and Qian Wang. "TiS3 sheet based van der Waals heterostructures with a tunable Schottky barrier." Nanoscale 10, no. 2 (2018): 807–15. http://dx.doi.org/10.1039/c7nr05606k.

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First-principles calculations suggest that the TiS<sub>3</sub> monolayer has the potential for device applications as a channel material contacting with graphene or other 2D metallic materials to form heterojunctions.

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38

Shi, Shun, Ya Feng, Bailing Li, et al. "Broadband and high-performance SnS₂/FePS₃/graphene van der Waals heterojunction photodetector." Applied Physics Letters 120, no. 8 (2022): 081101. http://dx.doi.org/10.1063/5.0083272.

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Two-dimensional materials and their heterojunctions have received extensive attention in fundamental and applied research of photonics, electronics, and spintronics. Herein, we stacked SnS2, FePS3, and graphene (Gr) nanosheets into SnS2/FePS3/Gr van der Waals heterojunction, which exhibits broadband photoresponse from an ultraviolet region (405 nm) to an infrared region (850 nm) in atmosphere at room temperature. It was found that the dominated carrier of SnS2/FePS3 and SnS2/FePS3/Gr hererojunction was different in the electrical transport. The photoresponsivity of SnS2/FePS3/Gr heterojunction

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Li, Luji, Gaojie Zhang, Hao Wu, et al. "Tunable Photoresponse in 2D WTe2/MoS2 Van der Waals Heterojunctions." Journal of Physical Chemistry C 125, no. 19 (2021): 10639–45. http://dx.doi.org/10.1021/acs.jpcc.1c01162.

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40

Zhu, Wenkai, Hailong Lin, Faguang Yan, et al. "Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions." Advanced Materials 33, no. 51 (2021): 2104658. http://dx.doi.org/10.1002/adma.202104658.

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41

Liu, Yuanda, Fengqiu Wang, Yujie Liu, Xizhang Wang, Yongbing Xu, and Rong Zhang. "Charge transfer at carbon nanotube–graphene van der Waals heterojunctions." Nanoscale 8, no. 26 (2016): 12883–86. http://dx.doi.org/10.1039/c6nr03965k.

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42

Hu, Wei, and Jinlong Yang. "First-principles study of two-dimensional van der Waals heterojunctions." Computational Materials Science 112 (February 2016): 518–26. http://dx.doi.org/10.1016/j.commatsci.2015.06.033.

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43

Panasci, Salvatore Ethan, Ioannis Deretzis, Emanuela Schilirò, et al. "Interface Properties of MoS2 van der Waals Heterojunctions with GaN." Nanomaterials 14, no. 2 (2024): 133. http://dx.doi.org/10.3390/nano14020133.

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The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, che

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Zhu, Junqiang, Xiaofei Yue, Jiajun Chen, et al. "Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van der Waals Heterojunction." Applied Sciences 13, no. 10 (2023): 6024. http://dx.doi.org/10.3390/app13106024.

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Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe2/MoS2 van der Waals heterojunction. The laser treatment is used for p-doping WSe2 nanoflakes using high work function WOx. Then, an n-type MoS2 nanoflake is t

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Liu, Zixiang, Yaxiao Yang, Xiaoyu Yang, Guangqiang Yin, and Zhiguo Wang. "Tunable Band-Structures of MoSe2/C3N (M = Mo and W) van der Waals Heterojunctions." Materials Research Express, February 24, 2023. http://dx.doi.org/10.1088/2053-1591/acbf10.

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Abstract Van der Waals (vdW) heterojunctions constructed using two-dimensional (2D) materials have shown excellent properties for applications in various fields. In this study, the structural and electronic properties of 2D MoSe2/C3N and WSe2/C3N vdW heterojunctions were investigated using first-principles calculations. The results show that the MoSe2/C3N heterojunction is an indirect bandgap semiconductor with a small bandgap 0.05 eV and the WSe2/C3N heterojunction is a type II heterojunction with an indirect bandgap of 0.26 eV. Strains and external electric fields can effectively modulate th

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YiZhou Yao, 舒海波, Dan Cao, et al. "A first-principles study on environmental stability and optoelectronic properties of bismuth oxychloride/cesium lead chloride van der Waals heterojunctions." Acta Physica Sinica, 2022, 0. http://dx.doi.org/10.7498/aps.71.20220544.

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All-inorganic metal halide perovskites represented by cesium lead chloride have become important candidates for the development of high-performance photovoltaic and optoelectronic devices due to their excellent optoelectronic properties and defect tolerance. However, poor structural stability has become a bottleneck question for its commercial application. In this paper, we propose to integrate thin layers of bismuth oxychloride (BiOCl) on the surface of cesium lead chloride perovskite (CsPbCl<sub>3</sub>) to form a van der Waals heterojunction. And we systematically study the envi

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Pan, panjinghua, Yu Wang, Danni Wang, et al. "Excitonic solar cells based on van der Waals heterojunctions of Janus III-VI chalcogenide monolayers." Nanotechnology, May 22, 2023. http://dx.doi.org/10.1088/1361-6528/acd788.

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Abstract We construct the two-dimensional (2D) excitonic solar cells based on type II vdW heterojunctions of Janus III-VI chalcogenide monolayers and investigate the performance of the device using the first principle. The calculated solar energy absorbance of In2SSe/GaInSe2 and In2SeTe/GaInSe2 heterojunctions is the order of 105 cm-1. The predicted photoelectric conversion efficiency of the In2SeTe/GaInSe2 heterojunction can reach up to 24.5%, which compares favorably with other previously studied 2D heterojunctions. The excellent performance of In2SeTe/GaInSe2 heterojunction originates from

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Chen, Hongjing, Yuntong Xing, Xia Wang, et al. "Electrical control of exchange bias in Fe3GaTe2/Fe3GeTe2 van der Waals heterostructures." Applied Physics Letters 126, no. 1 (2025). https://doi.org/10.1063/5.0235511.

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Magnetic heterojunctions with large exchange bias have promising applications in magnetic sensing and data storage. Ferromagnetic/antiferromagnetic (FM/AFM) heterojunctions are often used to generate exchange bias. However, the requirement of thermal manipulation makes controlling exchange bias in FM/AFM heterojunctions inconvenient. Herein, a Fe3GeTe2/Fe3GaTe2 FM/FM heterojunction is constructed to generate large exchange bias and reflected magnetic circular dichroism and magneto-optical Kerr effect techniques are used for the magnetic characterization of the heterojunction. The results show

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Huang Min, Li ZhanHai, and Cheng Fang. "Tunable electronic structures and interface contact in graphene/C<sub>3</sub>N van der Waals heterostructures." Acta Physica Sinica, 2023, 0. http://dx.doi.org/10.7498/aps.72.20230318.

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Graphene-based van der Waals heterojunctions can not only modulate the electronic properties of graphene but also retain the superior properties of the original monolayer. In this paper, the structure, electrical contact types, electronic and optical properties of Graphene/C<sub>3</sub>N van der Waals heterojunctions are systematically investigated based on first-principles calculations. We find that there is a p-type Schottky contact of only 0.039 eV in the Graphene/C<sub>3</sub>N van der Waals heterojunctions at the equilibrium state. The external electric field can a

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Hao, Yulong, Shiwei Zhang, Chen Fan, et al. "Te nanomesh-monolayer WSe2 vertical van der Waals heterostructure for high-performance photodetector." Applied Physics Letters 126, no. 3 (2025). https://doi.org/10.1063/5.0247614.

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Recently, two-dimensional tungsten diselenide (WSe2) has attracted extensive attention due to their unique properties, exhibiting excellent properties in electronics, optoelectronics, and valleytronics. However, the limited light absorption efficiency of monolayer WSe2 severely hinders its practical applications. To address this challenge, vertical Te-WSe2 heterojunctions consisting of Te nanomesh and monolayer WSe2 nanofilm have been prepared using the two-step vapor deposition method, which significantly enhances the optoelectronic performance. Te-WSe2 heterojunction photodetector exhibits a

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