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Journal articles on the topic 'Varactors MOS'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

Li, Shuai, and Tao Zhang. "Simulation and Realization of MOS Varactors." Procedia Engineering 29 (2012): 1645–50. http://dx.doi.org/10.1016/j.proeng.2012.01.188.

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2

Peikert, T., J. K. Bremer, and W. Mathis. "Modellierungskonzept für MOS Varaktoren zur Minimierung der AM-FM Konversion in VCOs." Advances in Radio Science 8 (October 1, 2010): 143–49. http://dx.doi.org/10.5194/ars-8-143-2010.

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Abstract. In dieser Arbeit wird ein analytisches Simulationsmodell für MOS Varaktoren zur Entwurfsunterstützung von integrierten CMOS LC-Tank VCO-Schaltungen präsentiert. Das analytische Simulationsmodell wurde auf Basis des EKV-Transistormodells implementiert und beinhaltet ausschließlich Design- und Prozessparameter für die Berechnung der Varaktorkapazität. Dieses Simulationsmodell ermöglicht es, die verwendeten Varaktoren im Vorfeld des VCO-Entwurfs zu dimensionieren, die effektive Großsignalkapazität in Abhängigkeit des Ausgangssignals zu berechnen und einzelne Eigenschaften der Varaktoren

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3

Andreani, P., and S. Mattisson. "On the use of MOS varactors in RF VCOs." IEEE Journal of Solid-State Circuits 35, no. 6 (2000): 905–10. http://dx.doi.org/10.1109/4.845194.

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4

Ramiah, Harikrishnan, and Tun ZainalAzni Zulkifli. "Design and Optimization of Integrated MOS Varactors for High-tunability RF Circuits." IETE Journal of Research 57, no. 4 (2011): 346. http://dx.doi.org/10.4103/0377-2063.86308.

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5

Gildenblat, G., Z. Zhu, and W. Wu. "Analytical Expression for the Bias and Frequency-Dependent Capacitance of MOS Varactors." IEEE Transactions on Electron Devices 54, no. 11 (2007): 3107–8. http://dx.doi.org/10.1109/ted.2007.907134.

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6

Bunch, R. L., and S. Raman. "Large-signal analysis of MOS varactors in CMOS -G/sub m/ LC VCOs." IEEE Journal of Solid-State Circuits 38, no. 8 (2003): 1325–32. http://dx.doi.org/10.1109/jssc.2003.814416.

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7

Quemerais, Thomas, Daniel Gloria, Dominique Golanski, and Simon Bouvot. "High-Q MOS Varactors for Millimeter-Wave Applications in CMOS 28-nm FDSOI." IEEE Electron Device Letters 36, no. 2 (2015): 87–89. http://dx.doi.org/10.1109/led.2014.2378313.

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8

Chen, Zhiyu, Wooyeol Choi, and Kenneth K. O. "300-GHz 2nd-Order Subharmonic Upconversion Mixer Using Symmetric MOS Varactors in 65-nm CMOS." IEEE Solid-State Circuits Letters 3 (2020): 538–41. http://dx.doi.org/10.1109/lssc.2020.3036804.

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9

Xu, Haifeng, and K. O. Kenneth. "High-$Q$ Thick-Gate-Oxide MOS Varactors With Subdesign-Rule Channel Lengths for Millimeter-Wave Applications." IEEE Electron Device Letters 29, no. 4 (2008): 363–65. http://dx.doi.org/10.1109/led.2008.917629.

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10

Chen, Chia Chung, Meshon Jiang, Li Ming Chang, Tzu Jin Yeh, Feng Ming Liu, and Sally Liu. "Optimization and modeling for MOS varactors in 65 nm low-power mixed-signal/radio-frequency technology." Microwave and Optical Technology Letters 51, no. 9 (2009): 2119–21. http://dx.doi.org/10.1002/mop.24567.

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11

Maget, J., M. Tiebout, and R. Kraus. "MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS." IEEE Journal of Solid-State Circuits 38, no. 7 (2003): 1139–47. http://dx.doi.org/10.1109/jssc.2003.813288.

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12

MIYAKE, Masataka, Daisuke HORI, Norio SADACHIKA, et al. "Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors." IEICE Transactions on Electronics E92-C, no. 6 (2009): 777–84. http://dx.doi.org/10.1587/transele.e92.c.777.

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13

Wang, Zixuan, Hongyang Wu, Xin Wang, et al. "A 0.5~0.7 V LC Digitally Controlled Oscillator Based on a Multi-Stage Capacitance Shrinking Technique." Electronics 8, no. 11 (2019): 1336. http://dx.doi.org/10.3390/electronics8111336.

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This paper presents a 2.4 GHz LC digitally controlled oscillator (DCO) at near-threshold supplies (0.5~0.7 V). It was a challenge to achieve a low voltage, low power, and high resolution simultaneously. DCOs with metal oxide semiconductor (MOS) varactors consume low power, but their resolution is limited. ΔΣ-DCOs can achieve a high resolution at the cost of high power consumption. A multi-stage capacitance shrinking technique was proposed in this paper to address the tradeoff mentioned above. The unit variable capacitance of the LC tank was largely reduced by the bridging capacitors and the nu

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14

Maget, J., M. Tiebout та R. Kraus. "Influence of novel MOS varactors on the performance of a fully integrated UMTS VCO in standard 0.25-μm CMOS technology". IEEE Journal of Solid-State Circuits 37, № 7 (2002): 953–58. http://dx.doi.org/10.1109/jssc.2002.1015696.

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15

Fong, N. H. W., J. O. Plouchart, N. Zamdmer, et al. "A 1-V 3.8-5.7-GHz wide-band VCO with differentially tuned accumulation MOS varactors for common-mode noise rejection in CMOS SOI technology." IEEE Transactions on Microwave Theory and Techniques 51, no. 8 (2003): 1952–59. http://dx.doi.org/10.1109/tmtt.2003.815273.

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16

Rao, P. R. S., K. N. Bhat, and K. R. Rao. "High-sensitivity MOS varactor." Solid-State Electronics 29, no. 11 (1986): 1137–44. http://dx.doi.org/10.1016/0038-1101(86)90056-0.

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17

Mačaitis, Vytautas, and Vaidotas Barzdėnas. "DESIGN AND INVESTIGATION OF 65 NM RF CMOS TECHNOLOGY LC-VCO’S / AUKŠTADAŽNIŲ, 65 NM KMOP TECHNOLOGIJOS, LC ĮTAMPA VALDOMŲ GENERATORIŲ PROJEKTAVIMAS IR TYRIMAS." Mokslas – Lietuvos ateitis 6, no. 2 (2014): 198–201. http://dx.doi.org/10.3846/mla.2014.29.

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In this paper, two LC Voltage-Controlled Oscillators (LC-LC-VCO1 and LC-VCO2) are designed using TSMC 65 nm LP/MS/RF CMOS technology. Two arrays, one of which is a 6-bit capacitor array and the other – an array of MOS varactors, provide a wide LC-VCO frequency tuning range. Post-layout simulation results unveiled that at 1.8 V supply voltage the tuning range of LC-VCO1 spans from 5.17 GHz to 6.76 GHz and for LC-VCO2 the range spans from 6.33 GHz to 8.08 GHz. The phase noise at 1 MHz offset frequency is about −123.1 dBc/Hz for LC-VCO1 and −121.6 dBc/Hz for LC-VCO2. The power dissipation at maxi

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18

Senapati, B., K. Ehwald, W. Winkler, and F. Furnhammer. "High performance MOS varactor SPICE model." Electronics Letters 38, no. 23 (2002): 1416. http://dx.doi.org/10.1049/el:20020978.

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19

Kumar, Manoj. "Voltage-Controlled Oscillator Design Using MOS Varactor." Journal of The Institution of Engineers (India): Series B 100, no. 5 (2019): 515–24. http://dx.doi.org/10.1007/s40031-019-00399-8.

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20

Kumar, Manoj, and Dileep Dwivedi. "A Low Power CMOS-Based VCO Design with I-MOS Varactor Tuning Control." Journal of Circuits, Systems and Computers 27, no. 10 (2018): 1850160. http://dx.doi.org/10.1142/s0218126618501608.

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This paper presents a new design of low power voltage controlled oscillator (VCO) circuit using three transistors NOR-gate and I-MOS (inversion mode) varactor tuning method. Variation in the oscillation frequency has been obtained by varying the output load capacitance with the use of I-MOS varactor tuning consisting of two PMOS transistors connected in parallel. Variable capacitance across the I-MOS varactor has been achieved by varying the source/drain voltage ([Formula: see text] and back-gate voltage ([Formula: see text]. Variation of [Formula: see text] from 1[Formula: see text]V to 2[For

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21

Yongho Oh, Sooyeon Kim, Seungyong Lee, and Jae-Sung Rieh. "The Island-Gate Varactor—A High-Q MOS Varactor for Millimeter-Wave Applications." IEEE Microwave and Wireless Components Letters 19, no. 4 (2009): 215–17. http://dx.doi.org/10.1109/lmwc.2009.2015499.

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22

Wartenberg, S. A., and J. R. Hauser. "Substrate Voltage and Accumulation-Mode MOS Varactor Capacitance." IEEE Transactions on Electron Devices 52, no. 7 (2005): 1563–67. http://dx.doi.org/10.1109/ted.2005.850953.

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23

Hong, Seoyoung, and Seonghearn Lee. "A Study on RF Large-Signal Model for High Resistivity SOI MOS Varactor." Journal of the Institute of Electronics and Information Engineers 53, no. 9 (2016): 49–53. http://dx.doi.org/10.5573/ieie.2016.53.9.049.

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24

Liu, Yidong. "Reliability analysis of MOS varactor in CMOS LC VCO." Microelectronics Journal 42, no. 2 (2011): 330–33. http://dx.doi.org/10.1016/j.mejo.2010.12.003.

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25

Kumar, Manoj. "CMOS oscillator with MOS varactor and body bias tuning." International Journal of Circuits and Architecture Design 2, no. 1 (2016): 68. http://dx.doi.org/10.1504/ijcad.2016.075912.

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26

Rustagi, S. C., and C. C. C. Leung. "Accumulation mode MOS varactor SPICE model for RFIC applications." Electronics Letters 36, no. 20 (2000): 1735. http://dx.doi.org/10.1049/el:20001225.

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27

Su, C. Y., B. M. Tseng, S. J. Chang, and L. P. Chen. "Scalable RF MIS varactor model." Electronics Letters 37, no. 12 (2001): 760. http://dx.doi.org/10.1049/el:20010510.

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28

Yook, Byungho, Kwangwon Park, Seungwon Park, et al. "A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS–varactor Pair." Electronics 8, no. 5 (2019): 537. http://dx.doi.org/10.3390/electronics8050537.

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This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. The W-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS–varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutralization tolerant of capacitance change caused by process–voltage–temperature (PVT) variation or transis

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29

Karimi, Ali, and Emad Ebrahimi. "A new modified I-MOS varactor for linear range enhancement." Microelectronics Journal 90 (August 2019): 181–86. http://dx.doi.org/10.1016/j.mejo.2019.06.013.

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30

Molnar, K., G. Rappitsch, Z. Huszka, and E. Seebacher. "MOS varactor modeling with a subcircuit utilizing the BSIM3v3 model." IEEE Transactions on Electron Devices 49, no. 7 (2002): 1206–11. http://dx.doi.org/10.1109/ted.2002.1013277.

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31

Chan, Yi-Jen, Chi-Feng Huang, Chun-Chieh Wu, Chun-Hon Chen, and Chih-Ping Chao. "Performance Consideration of MOS and Junction Diodes for Varactor Application." IEEE Transactions on Electron Devices 54, no. 9 (2007): 2570–73. http://dx.doi.org/10.1109/ted.2007.903201.

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32

Kumar, Nitin, and Manoj Kumar. "Low power wide tuning range differential ring VCO designs with I-MOS and A-MOS varactor." AEU - International Journal of Electronics and Communications 131 (March 2021): 153583. http://dx.doi.org/10.1016/j.aeue.2020.153583.

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33

Lim, Chang-Woo, Hong-Yeoul Noh, and Tae-Yeoul Yun. "Small VCO-Gain Variation Adding a Bias-Shifted Inversion-Mode MOS Varactor." IEEE Microwave and Wireless Components Letters 27, no. 4 (2017): 395–97. http://dx.doi.org/10.1109/lmwc.2017.2678431.

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34

Dabas, Shweta, and Manoj Kumar. "A CMOS based low power digitally controlled oscillator design with MOS varactor." Analog Integrated Circuits and Signal Processing 100, no. 3 (2019): 565–75. http://dx.doi.org/10.1007/s10470-019-01476-0.

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35

Suo, Guannan, Guoyong Zhang, Bisong Cao, et al. "Design of continuously tunable superconducting filter with semiconductor varactors." Microwave and Optical Technology Letters 56, no. 4 (2014): 775–77. http://dx.doi.org/10.1002/mop.28239.

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36

ITANO, Yuka, Shotaro MORIMOTO, Sadayuki YOSHITOMI, and Nobuyuki ITOH. "High-Q MOS Varactor Models for Quasi-Millimeter-Wave Low-Noise LC-VCOs." IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E97.A, no. 3 (2014): 759–67. http://dx.doi.org/10.1587/transfun.e97.a.759.

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37

Dwivedi, D., and M. Kumar. "A 0.7-2.4 GHZ LOW POWER VCO DESIGN WITH INVERSION MOS VARACTOR TUNING." Telecommunications and Radio Engineering 79, no. 3 (2020): 249–60. http://dx.doi.org/10.1615/telecomradeng.v79.i3.60.

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38

Maris Ferreira, Pietro, Cora Donche, Ambroise Delalin, et al. "Sub-fF 130 nm MOS Varactor Characterization Using 6.8 GHz Interferometry-Based Reflectometer." IEEE Microwave and Wireless Components Letters 25, no. 6 (2015): 418–20. http://dx.doi.org/10.1109/lmwc.2015.2421326.

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39

Svelto, F., and R. Castello. "A bond-wire inductor-MOS varactor VCO tunable from 1.8 to 2.4 GHz." IEEE Transactions on Microwave Theory and Techniques 50, no. 1 (2002): 403–7. http://dx.doi.org/10.1109/22.981292.

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40

Victory, J., Z. Yan, G. Gildenblat, C. McAndrew, and J. Zheng. "A Physically Based, Scalable MOS Varactor Model and Extraction Methodology for RF Applications." IEEE Transactions on Electron Devices 52, no. 7 (2005): 1343–53. http://dx.doi.org/10.1109/ted.2005.850693.

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41

Lázaro, Antonio, David Girbau, and Lluís Pradell. "Distortion produced by RF MEMS varactors on digital communication signals." Microwave and Optical Technology Letters 48, no. 2 (2005): 246–449. http://dx.doi.org/10.1002/mop.21318.

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42

Gautam, A. K., and B. R. Vishvakarma. "Analysis of varactor loaded active microstrip antenna." Microwave and Optical Technology Letters 49, no. 2 (2006): 416–21. http://dx.doi.org/10.1002/mop.22154.

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43

Gökalp, Nihan, and Özlem Aydin Civi. "Beam-steerable meanderline antenna using varactor diodes." Microwave and Optical Technology Letters 53, no. 1 (2010): 200–204. http://dx.doi.org/10.1002/mop.25634.

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44

Carbonell, Jorge, Vicente E. Boria, and Didier Lippens. "Nonlinear effects in split ring resonators loaded with heterostructure barrier varactors." Microwave and Optical Technology Letters 50, no. 2 (2008): 474–79. http://dx.doi.org/10.1002/mop.23122.

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45

Margalef-Rovira, Marc, Abdelhalim A. Saadi, Loic Vincent, et al. "Highly Tunable High-Q Inversion-Mode MOS Varactor in the 1–325-GHz Band." IEEE Transactions on Electron Devices 67, no. 6 (2020): 2263–69. http://dx.doi.org/10.1109/ted.2020.2989726.

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46

Шипицин, Д. С., А. Г. Потупчак та А. В. Шемякин. "РАЗРАБОТКА SPICE-МОДЕЛИ МДП-ВАРАКТОРА". NANOINDUSTRY Russia 96, № 3s (2020): 308–13. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.308.313.

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Разработана эквивалентная схема, методика экстракции SPICE-параметров МДП-варактора на основе результатов проведенных измерений специальных тестовых структур в составе пластин, модель верифицирована, сформирован модуль, учитывающий статистический разброс значений параметров процесса технологического производства. An appropriate equivalent circuit of MOS-varactor has been developed, as well as a technique for extracting its SPICE-parameters, based on the results of test structures measurements. The model has been verified, a statistical module has been created that takes into account the fabric

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47

Subramanyam, Guru, Faruque Ahamed, Rand Biggers, et al. "RF performance evaluation of ferroelectric varactor shunt switches." Microwave and Optical Technology Letters 47, no. 4 (2005): 370–74. http://dx.doi.org/10.1002/mop.21172.

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48

Kumar, Amarjit, and Nagendra P. Pathak. "Varactor-tunable dual-band filtering low-noise amplifier." Microwave and Optical Technology Letters 60, no. 5 (2018): 1118–25. http://dx.doi.org/10.1002/mop.31117.

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49

Musoll-Anguiano, Carles, Ignacio Llamas-Garro, Zabdiel Brito-Brito, Lluis Pradell, and Alonso Corona-Chavez. "Fully adaptable band-stop filter using varactor diodes." Microwave and Optical Technology Letters 52, no. 3 (2010): 554–58. http://dx.doi.org/10.1002/mop.24969.

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50

Wu, Xiu Long, Fa Niu Wang, Zhi Ting Lin, and Jun Ning Chen. "A Digitally Controlled Oscillator for ADPLL Application." Applied Mechanics and Materials 229-231 (November 2012): 1515–18. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.1515.

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In order to solve the defects in performance for analog RF circuit in deep submicron process, this paper discusses a new type of LC oscillators(Digitally Controlled Oscillator), which uses digital RF method to achieve the technology requirements of wireless communication. This new type of oscillator uses MOS varactor arrays to moderating the output frequency, through the using of digitally Sigma-Delta technology, we can get more precise resolution , and through using three modes progressively working way can make this kind of structure easily implement in process.

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