Relevant bibliographies by topics / Verilog Behavior Modeling

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Academic literature on the topic 'Verilog Behavior Modeling'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Verilog Behavior Modeling"

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Anjani Devi, N., T. Lokesh, H. S. P. Tejomurthy, and Sreenivasa Rao Ijjada. "Compact Modeling of Capacitance Based 14 nm Triple Gate FinFET Using Verilog-A." Journal of Computational and Theoretical Nanoscience 17, no. 9 (July 1, 2020): 4553–58. http://dx.doi.org/10.1166/jctn.2020.9278.

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Technology down scaling process divulges, the unveiled short channel effects (SCEs), which disrupts the behavior of bulk CMOS technology. In order to overcome these unveiled effects, the single gate controlling mechanism should be replaced with multiple gate mechanism to enhance the control of gate over the conducting channel. FinFET is a promising technology, which provides efficient gate controlling over the channel by multiple gates. Some of the multi gate FinFET devices are Double gate FinFET (DG-FinFET), Triple gate FinFET (TG-FinFET). In this paper, a charge based capacitance model has been proposed for modeling of TG-FinFET. The behavior and structure of the proposed device has been described in Verilog-A scripting language. IV characteristic of the proposed device has been observed, a three stage ring oscillator circuit is implemented with the proposed device to generate 1 GHz signal for testing purpose.
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Gudlavalleti, R. H., B. Saman, R. Mays, M. Lingalugari, E. Heller, J. Chandy, and F. Jain. "Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations." International Journal of High Speed Electronics and Systems 28, no. 03n04 (September 2019): 1940026. http://dx.doi.org/10.1142/s0129156419400263.

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Quantum dot gate (QDG) field-effect transistors (FETs) fabricated using Si and Ge quantum dot layers, self-assembled in the gate region over the tunnel oxide, have exhibited 3- and 4-state behavior applicable for ternary and quaternary logic, respectively. This paper presents simulation of QDG-FETs comprising mixed Ge and Si quantum dot layers over tunnel oxide using an analog behavior model (ABM) and Verilog model. The simulations reproduce the experimental I-V characteristics of a fabricated mixed dot QDG-FET. GeOx-cladded Ge quantum dot layer is in interface to the tunnel oxide and is deposited over with a SiOx-cladded Si quantum dot layer. The fabricated QDG-FET has one source and one gate. The ABM simulation models QDG-FET using conventional BSIM 3V3 FETs with capacitances and other device parameters. In addition, VERILOG model is presented. The agreement in circuit and quantum simulations and experimental data will further advance in the designing of QDG-FET-based analog-to-digital converters (ADCs), 2-bit logic gates and SRAM cells.
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Pérez-Bosch Quesada, Emilio, Rocío Romero-Zaliz, Eduardo Pérez, Mamathamba Kalishettyhalli Mahadevaiah, John Reuben, Markus Andreas Schubert, Francisco Jiménez-Molinos, Juan Bautista Roldán, and Christian Wenger. "Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems." Electronics 10, no. 6 (March 11, 2021): 645. http://dx.doi.org/10.3390/electronics10060645.

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In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.
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Sourav, Swapnil, Amit Krishna Dwivedi, and Aminul Islam. "Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element." Journal of Materials 2016 (September 22, 2016): 1–7. http://dx.doi.org/10.1155/2016/6123268.

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Phase transform properties of Indium Selenide (In2Se3) based Random Access Memory (RAM) have been explored in this paper. Phase change random access memory (PCRAM) is an attractive solid-state nonvolatile memory that possesses potential to meet various current technology demands of memory design. Already reported PCRAM models are mainly based upon Germanium-Antimony-Tellurium (Ge2Sb2Te5 or GST) materials as their prime constituents. However, PCRAM using GST material lacks some important memory attributes required for memory elements such as larger resistance margin between the highly resistive amorphous and highly conductive crystalline states in phase change materials. This paper investigates various electrical and compositional properties of the Indium Selenide (In2Se3) material and also draws comparison with its counterpart mainly focusing on phase transform properties. To achieve this goal, a SPICE model of In2Se3 based PCRAM model has been reported in this work. The reported model has been also validated to act as a memory cell by associating it with a read/write circuit proposed in this work. Simulation results demonstrate impressive retentivity and low power consumption by requiring a set pulse of 208 μA for a duration of 100 μs to set the PCRAM in crystalline state. Similarly, a reset pulse of 11.7 μA for a duration of 20 ns can set the PCRAM in amorphous state. Modeling of In2Se3 based PCRAM has been done in Verilog-A and simulation results have been extensively verified using SPICE simulator.
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Özbay, Günnur, and İlhan Yalçın. "An analysis of the effect of anger control program prepared by using traditional game an heroes of imagination on primary school grade 4 studentsGeleneksel oyun ve hayal kahramanlarından yararlanılarak hazırlanan öfke denetimi programının ilkokul 4. sınıf öğrencileri üzerindeki etkililiğinin incelenmesi." Journal of Human Sciences 14, no. 2 (May 21, 2017): 1879. http://dx.doi.org/10.14687/jhs.v14i2.4554.

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The purpose of this study is to investigate the effectiveness of the anger control program, which is based on the use of traditional games and heroes of imagination to reduce the aggressive behavior of primary school students. This experimental study consisted of control group, pretest and posttest. In this research, Multi-dimensional School Anger Inventory was applied. Students with high anger level and with low anger control ability were included in the study group. 34 students, including 17 experimental and 17 control groups, formed the study group. The sessions lasted 8 weeks. No study was applied to the control group. Analysis was performed using the Mann Whitney-U and Wilcoxon Marked Ranks Test from the non-parametric tests obtained when the data were not normally distributed. Findings from the study showed that experimental group who had trained for anger control has significantly increased anger control scores compared to the control groups. Findings obtained from the research have indicated that anger control program prepared by using traditional games and heroes of imagination has an effect on the ability of students to use anger control and positive coping methods. ÖzetBu çalışmanın amacı ilkokula devam eden öğrencilerin saldırgan davranışlarını azaltmaya yönelik geleneksel oyun ve hayal kahramanlarından yararlanarak hazırlanan öfke denetim programının etkililiğini araştırmaktır. Kontrol gruplu ön test, son test modeline dayalı deneysel bir çalışmadır. Araştırmada Çok Boyutlu Okul Öfke Envanteri uygulanmış, öfke düzeyi yüksek, öfke denetimi becerileri düşük öğrenciler arasından 17 kişilik deney ve kontrol grubu olmak üzere 34 öğrenci çalışma grubunu oluşturmuştur. Oturumlar 8 hafta sürmüştür. Kontrol grubu ile herhangi bir çalışma yapılmamıştır. Araştırmada elde edilen veriler normal dağılım göstermediğinden elde edilen veriler parametrik olmayan testlerden Mann Whitney-U ve Wilcoxon İşaretli Sıralar Testi ile analiz edilmiştir. Araştırmadan elde edilen bulgular öfke denetimi eğitimi alan deney grubunun eğitim sonrasında öfke denetim puanlarını kontrol gruplarına göre önemli düzeyde artırdığını ortaya koymuştur. Araştırma sonucunda elde edilen bulgular, geleneksel oyun ve hayal kahramanlarından yararlanılarak hazırlanan öfke denetimi programının öğrencilerin öfke denetimi ve olumlu başa çıkma yöntemlerini kullanma becerileri üzerinde etkili olduğunu göstermiştir.
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Özbek, Oğuz, and Meltem Kızılyallı. "Self-perceived leadership behaviors of undergraduates: Scale development study Lisans öğrencilerinin liderlik davranışlarına ilişkin öz algıları: Ölçek geliştirme çalışması." Journal of Human Sciences 14, no. 4 (December 10, 2017): 4112. http://dx.doi.org/10.14687/jhs.v14i4.4635.

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The aim of the study is to develop a valid and reliable instrument to assess the self-perceived leadership behaviors of Sport Sciences undergraduates. 24 undergraduate students defined the leadership concept, data collected were content analyzed, and the 53-itemed pool was reduced to 50 items preceding a review done by 3 scholars. Pilot instrument was administered to 284 Sport Sciences students. KMO (.934) and Bartlett test [4809.978; (p<0.000)] were conducted. Exploratory Factor Analysis revealed 4 factors. 4 Factors in total accounts for the % 54.12 of total variance. Factors generated were named as Participative Leader, Self- confident Leader, Principled Leader and Decisive Leader. Confirmatory Factor Analysis was run and Critical N (CN) was calculated as 252.11 Adaptive values of the model was determined as X2/df (1,39); RMSEA (0.037); NFI (0.97); CFI (0.99); GFI (0.93). The results indicated the model provided a good fit to the data.The results indicated Self-perceived leadership behaviors of undergraduates scale with 4 factors and 20 items is valid and reliable.Extended English abstract is in the end of Full Text PDF (TURKISH) file. ÖzetBu çalışmanın amacı, spor bilimleri lisans öğrencilerinin kendi liderlik davranışlarını değerlendirebilecekleri geçerli ve güvenilir bir ölçme aracı geliştirmektir. 24 öğrenci liderliğin tanımını yapmış, toplanan veriler içerik analizi tekniğiyle analiz edilmiş, 53 maddelik soru havuzu, alınan 3 uzman görüşü sonucu 50’ye indirilmiştir. Ölçeğin deneme formu, spor bilimleri fakültesi öğrencisi 284 kişiye uygulanmıştır. KMO (.934) ve Bartlett testi [4809.978; (p<0.000)] yapılmıştır. Açımlayıcı Faktör Analizi sonucu maddeler 4 ayrı boyutta toplanmıştır. Bu dört boyut toplam varyansın % 54.12’sini açıklamaktadır. Boyutlar, Katılımcı Lider, Kendine Güvenen Lider, İlkeli Lider ve Kararlı Lider olarak isimlendirilmiştir. Doğrulayıcı Faktör Analizi sonucu kritik N değeri 252.11 olarak hesaplanmıştır. Modelin uygunluğuna ilişkin X2/df değeri 1,39; RMSEA değeri 0.037; NFI değeri 0.97; CFI değeri 0.99 ve GFI değeri 0.93 olarak tespit edilmiştir. Bu sonuçlar modelin iyi uyum değerlerini karşıladığını göstermiştir. Dört boyut ve yirmi maddeden oluşan Lisans Öğrencilerinin Liderlik Davranışlarına İlişkin Öz Algıları Ölçeği’nin geçerli ve güvenilir olduğuna karar verilmiştir.
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Kaya, Ferdi, and Songül Tümkaya. "Investigating the prediction levels of school alienation of the classroom teaching students’ achievement orientation, self handicapping behaviours and demographic featuresSınıf öğretmenliği öğrencilerinin başarı yönelimi, kendini engelleme davranışları ve demografik özelliklerinin okula yabancılaşmayı yordama düzeylerinin incelenmesi." Journal of Human Sciences 14, no. 1 (March 13, 2017): 747. http://dx.doi.org/10.14687/jhs.v14i1.4328.

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The aim of this study was to reveal whether the success orientation, self-handicapping behaviours and demographic features of the classroom teachers predict their school alienation in a meaningful way of or not. This research is a descriptive study that has the relational screening model which aims at determining the success orientation, self-handicapping behaviours and demographic features of the classroom teachers, which affect their school alienation levels, and identifying their mutual interaction.The population of the study consisted of 370 students of Çukurova University Faculty of Education, Department of Primary School Teaching, in the educational year 2014-2015. The data were collected by means of Students Alienation Scale developed by Çağlar (2012), 2X2 Success Orientation Scale of which validity and reliability tests were performed by Akın (2006a), Translation into Turkish by Özgüngör (2008), Preemptive Behavior scale of which validity and reliability tests were performed and Personal Information Form prepared by the researcher. The data obtained were analysed using the SPSS 21.0 programme. Correlation analysis was made in order to reveal relations among the variables. Multiple regression analysis was used in order to identify the variables that predict the school alienation levels of the students of primary school teaching.As a result of the multiple regression analysis that were made, it has been understood that powerlessness sub-dimension of school alienation by students of primary school teaching predicts respectively learning-approach, poor relations with the teaching stuff, learning-avoidance, self-handicapping and very low academic success level; the normlesness sub-dimension predicts learning-approach, academic success grade, performance-approach, learning-avoidance, poor relations with the teaching stuff; the isolation sub-dimension predicts very good relations with classmates, performance-approach, learning-avoidance, medium level relations with classmates and choosing department; the meaninglessness sub-dimension predicts performance-avoidance, learning-avoidance, self-handicapping, choosing department, poor relations with the teaching stuff and the gender; total point of school alienation learning- approach, self-handicapping, choosing department, poor relations with the teaching stuff, acedemic success grade, performance-avoidance, learning- avoidance, variables. ÖzetBu araştırmanın amacı, sınıf öğretmenliği öğrencilerinin başarı yönelimi, kendini engelleme davranışları ve demografik özelliklerinin okula yabancılaşmalarını anlamlı bir şekilde yordayıp yordamadığını ortaya çıkartmaktır. Araştırma, sınıf öğretmenliği öğrencilerinin okula yabancılaşma düzeylerini etkileyen başarı yönelimleri, kendini engelleme davranışları ve demografik özelliklerinin saptanması ve bunların birbirleriyle etkileşimlerinin belirlenmesini amaçlayan ilişkisel tarama modelinde betimsel bir çalışmadır.Araştırmanın evrenini 2014-2015 eğitim-öğretim yılında Çukurova Üniversitesi Eğitim Fakültesi Sınıf Öğretmenliği Bölümünde öğrenim gören 370 öğrenci oluşturmaktadır. Araştırmanın verileri Çağlar (2012) tarafından geliştirilen Öğrenci Yabancılaşma Ölçeği, Akın (2006a) tarafından geçerlik güvenirlik çalışması yapılan 2X2 Başarı Yönelimleri Ölçeği, Özgüngör (2008) tarafından Türkçeye çevrisi, geçerliği ve güvenirlik çalışması yapılan Engelleyici Davranış ölçeği ve araştırmacı tarafından hazırlanan Kişisel Bilgi Formu ile toplanmıştır. Elde edilen veriler SPSS 21.0 programında çözümlenmiştir. Değişkenler arası ilişkilerin ortaya çıkarılması amacıyla korelâsyon analizi yapılmıştır.Sınıf öğretmenliği öğrencilerinin okula yabancılaşma düzeylerini yordayıcı değişkenlerin ortaya çıkarılması için çoklu regresyon analizi kullanılmıştır.Yapılan çoklu regresyon analizleri sonucunda sınıf öğretmenliği öğrencilerinin okula yabancılaşmanın Güçsüzlük alt boyutunu sırasıyla, öğrenme-yaklaşma, öğretim elemanları ile zayıf ilişkiler, öğrenme-kaçınma, kendini engelleme ve çok düşük akademik başarı düzeyi; Kuralsızlık alt boyutunu, öğrenme-yaklaşma, akademik başarı notu, performans-yaklaşma, öğrenme- kaçınma, öğretim elemanlarıyla zayıf ilişki; Soyutlanma alt boyutunu, sınıf arkadaşlarıyla çok iyi düzeyde ilişki, performans-yaklaşma, sınıf arkadaşlarıyla orta düzeyde ilişki ve bölümü seçme ; Anlamsızlık alt boyutunu, performans-kaçınma, öğrenme-kaçınma, kendini engelleme, bölüm seçme, öğretim elemanlarıyla zayıf ilişki ve cinsiyet, Okula yabancılaşma toplam puanını, öğrenme-yaklaşma, kendini engelleme, bölüm seçme, öğretim elemanları ile zayıf ilişkiler, akademik başarı notu, performans-kaçınma, öğrenme-kaçınma değişkenlerinin yordadıkları anlaşılmıştır.
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Hazar, Zekihan, Kürşat Hazar, Belgin Gökyürek, Muhsin Hazar, and Sinan Çelikbilek. "Investigation of the relationship between playfulness, digital game addiction and aggression levels of secondary school students in terms of various variablesOrtaokul öğrencilerinin oyunsallık, dijital oyun bağımlılığı ve saldırganlık düzeyleri arasındaki ilişkinin çeşitli değişkenler açısından incelenmesi." Journal of Human Sciences 14, no. 4 (December 19, 2017): 4320. http://dx.doi.org/10.14687/jhs.v14i4.5035.

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Introduction and Aim: The most basic problems that the developing technology brings to the life of children are the increasingly decreased physical games, the rapid increase of the digital game addiction and the violent games are pushing the aggressive behavior of the individuals. This research is important for the solution of the problem. Purpose of the research; The relationship between playfulness, digital game addiction and aggressiveness of middle school students in terms of various variables.Method: In this research, which adopts the relational screening model, similar sampling method is used as the objective sampling method. In this direction, the study group is composed of the students from the 2016-2017 education period, the Türdü 100. Year Middle School students affiliated to the Muğla Provincial Directorate of National Education and Maltepe Secondary School students affiliated to the Ankara Provincial Directorate of National Education. 55.6% of the participants were female (n = 213) and 44.4% were male (n = 170). 49.6% (n = 190) of participants attending Türdü 100.Yıl Secondary School, 50.4% of students attending Maltepe Secondary School (n = 193). Of the participants, 42% were 12 years (n = 161), 27.7% were 13 years (n = 106) and 30.3% were 14 years old (n = 116). In order to collect data in the study, Playfulness Scale, Digital Game Addiction Scale for Children, and Aggression Scale were used. The obtained data were subjected to various analyzes using the SPSS 24.0 packet program. Findings: According to research findings, participants' total scores on the scales were statistically significantly different between school type, sex and age variables. At the same time, it was found that the participants had a statistically significant relationship between the total scores of these three scales.Conclusion and Discussion: As a result; Playability, digital game dependency and aggressiveness of middle school students are related to each other. Therefore, it can be said that it is important to investigate the problems to be solved by considering these three situations to solve the present problem.Extended English abstract is in the end of Full Text PDF (TURKISH) file. ÖzetGiriş ve Amaç: Gelişen teknolojinin çocukların yaşamına getirdiği en temel olumsuzluklar arasında fiziksel aktivite içerikli oyunların giderek azalması, dijital oyun bağımlılığının hızlı bir biçimde artması ve bununla bağlantılı olarak özellikle şiddet içerikli oyunların bireyleri saldırganlık davranışına itmesi gibi önemli sorunlar olarak karşımıza çıkmaktadır. Bu araştırma, yaşanan problemin çözümüne ışık tutması açısından önem taşımaktadır. Araştırmanın amacı; ortaokul öğrencilerinin oyunsallık, dijital oyun bağımlılığı ve saldırganlık düzeyleri arasındaki ilişkinin çeşitli değişkenler açısından incelenmesidir.Yöntem: İlişkisel tarama modelinin benimsendiği bu araştırmada, amaçsal örnekleme yöntemlerinden benzeşik örnekleme yöntemi kullanılmıştır. Bu kapsamda çalışmanın örneklemini, 2016-2017 eğitim öğretim döneminde öğrenim görmekte olan Muğla İl Milli Eğitim müdürlüğüne bağlı Türdü 100. Yıl Ortaokulu öğrencileri ile Ankara İl Milli Eğitim Müdürlüğüne bağlı Maltepe Ortaokulu öğrencileri oluşturmaktadır. Katılımcıların % 55,6’sı kadın (n=213), % 44,4’ü erkektir (n=170). Türdü 100.Yıl Ortaokulunda öğrenim görmekte olan katılımcıların oranı % 49,6 iken (n=190), Maltepe Ortaokulunda öğrenim görmekte olan katılımcı oranı % 50,4’tür (n=193). Katılımcıların % 42’si 12 yaş (n=161), % 27,7’si 13 yaş (n=106), %30,3’ ü 14 yaş (n=116) grubundadır. Araştırmada veri toplamak amacıyla Oyunsallık ölçeği, Çocuklar İçin Dijital Oyun Bağımlılığı ölçeği ve Saldırganlık ölçeği kullanılmıştır. Toplanan veriler SPSS 24.0 paket program kullanılarak çeşitli analizlere tabi tutulmuştur. Bulgular: Araştırma bulgularına göre katılımcıların ölçeklerden almış oldukları toplam puanlarının okul türü, cinsiyet ve yaş değişkenleri arasında istatistiksel olarak anlamlı düzeyde farklılık gösterdiği bulunmuştur. Aynı zamanda katılımcıların bu üç ölçekten almış oldukları toplam puanlar arasında istatistiksel olarak anlamlı düzeyde ilişki olduğu görülmüştür. Sonuç ve Tartışma: Sonuç olarak; ortaokul öğrencilerinin oyunsallık, dijital oyun bağımlılığı ve saldırganlık düzeylerinin birbirleri ile ilişkili olduğu dolayısıyla bu problemin tespit ve çözümüne yönelik yapılacak olan araştırmaların bu üç durumu göz önünde bulundurarak ele alınmasının mevcut problemin çözümünde önemli olduğu söylenebilir.
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Gandharava Dahl, Sumedha, Robert C. Ivans, and Kurtis D. Cantley. "Effects of memristive synapse radiation interactions on learning in spiking neural networks." SN Applied Sciences 3, no. 5 (April 13, 2021). http://dx.doi.org/10.1007/s42452-021-04553-0.

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AbstractThis study uses advanced modeling and simulation to explore the effects of external events such as radiation interactions on the synaptic devices in an electronic spiking neural network. Specifically, the networks are trained using the spike-timing-dependent plasticity (STDP) learning rule to recognize spatio-temporal patterns (STPs) representing 25 and 100-pixel characters. Memristive synapses based on a TiO2 non-linear drift model designed in Verilog-A are utilized, with STDP learning behavior achieved through bi-phasic pre- and post-synaptic action potentials. The models are modified to include experimentally observed state-altering and ionizing radiation effects on the device. It is found that radiation interactions tend to make the connection between afferents stronger by increasing the conductance of synapses overall, subsequently distorting the STDP learning curve. In the absence of consistent STPs, these effects accumulate over time and make the synaptic weight evolutions unstable. With STPs at lower flux intensities, the network can recover and relearn with constant training. However, higher flux can overwhelm the leaky integrate-and-fire post-synaptic neuron circuits and reduce stability of the network.
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Dissertations / Theses on the topic "Verilog Behavior Modeling"

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Shen, Jue. "Quantization Effects Analysis on Phase Noise and Implementation of ALL Digital Phase Locked-Loop." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-37212.

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With the advancement of CMOS process and fabrication, it has been a trend to maximize digital design while minimize analog correspondents in mixed-signal system designs. So is the case for PLL. PLL has always been a traditional mixed-signal system limited by analog part performance. Around 2000, there emerged ADPLL of which all the blocks besides oscillator are implemented in digital circuits. There have been successful examples in application of Bluetooth, and it is moving to improve results for application of WiMax and ad-hoc frequency hopping communication link. Based on the theoretic and measurement results of existing materials, ADPLL has shown advantages such as fast time-to-market, low area, low cost and better system integration; but it also showed disadvantages in frequency resolution and phase noise, etc. Also this new topic still opens questions in many researching points important to PLL such as tracking behavior and quantization effect. In this thesis, a non-linear phase domain model for all digital phase-locked loop (ADPLL) was established and validated. Based on that, we analyzed that ADPLL phase noise prediction derived from traditional linear quantization model became inaccurate in non-linear cases because its probability density of quantization error did not meet the premise assumption of linear model. The phenomena of bandwidth expansion and in-band phase noise decreasing peculiar to integer-N ADPLL were demonstrated and explained by matlab and verilog behavior level simulation test bench. The expression of threshold quantization step was defined and derived as the method to distinguish whether an integer-N ADPLL was in non-linear cases or not, and the results conformed to those of matlab simulation. A simplified approximation model for non-linear integer-N ADPLL with noise sources was established to predict in-band phase noise, and the trends of the results conformed to those of matlab simulation. Other basic analysis serving for the conclusions above covered: ADPLL loop dynamics, traditional linear theory and its quantitative limitations and numerical analysis of random number. Finally, a present measurement setup was demonstrated and the results were analyzed for future work.
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Zheng, Geng. "Layout-accurate Ultra-fast System-level Design Exploration Through Verilog-ams." Thesis, University of North Texas, 2013. https://digital.library.unt.edu/ark:/67531/metadc271923/.

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This research addresses problems in designing analog and mixed-signal (AMS) systems by bridging the gap between system-level and circuit-level simulation by making simulations fast like system-level and accurate like circuit-level. The tools proposed include metamodel integrated Verilog-AMS based design exploration flows. The research involves design centering, metamodel generation flows for creating efficient behavioral models, and Verilog-AMS integration techniques for model realization. The core of the proposed solution is transistor-level and layout-level metamodeling and their incorporation in Verilog-AMS. Metamodeling is used to construct efficient and layout-accurate surrogate models for AMS system building blocks. Verilog-AMS, an AMS hardware description language, is employed to build surrogate model implementations that can be simulated with industrial standard simulators. The case-study circuits and systems include an operational amplifier (OP-AMP), a voltage-controlled oscillator (VCO), a charge-pump phase-locked loop (PLL), and a continuous-time delta-sigma modulator (DSM). The minimum and maximum error rates of the proposed OP-AMP model are 0.11 % and 2.86 %, respectively. The error rates for the PLL lock time and power estimation are 0.7 % and 3.0 %, respectively. The OP-AMP optimization using the proposed approach is ~17000× faster than the transistor-level model based approach. The optimization achieves a ~4× power reduction for the OP-AMP design. The PLL parasitic-aware optimization achieves a 10× speedup and a 147 µW power reduction. Thus the experimental results validate the effectiveness of the proposed solution.
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Krencker, Jean-Christophe. "Développement d'outils et de modèles CAO de haut niveau pour la simulation électrothermique de circuits mixtes en technologie 3D." Phd thesis, Université de Strasbourg, 2012. http://tel.archives-ouvertes.fr/tel-00804671.

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Les travaux de cette thèse s'inscrivent dans un projet de grande envergure, le projet 3D-IDEAS, financé par l'ANR. Le but de ce projet est d'établir la chaîne complète de l'intégration de circuits en technologie 3D. Les densités de puissance dans ces circuits sont telles que les problèmes liés à la température - électromigration, désappariement des courants et tensions de polarisation, etc. - sont susceptibles de remettre en cause la conception du circuit. Le coût élevé de la fabrication de ces circuits oblige le concepteur à valider le comportement électrothermique des circuits préalablement à l'envoi en fabrication. Pour répondre à ce besoin, un simulateur électrothermique précis et fiable doit être à disposition. En outre, en raison de la complexité extrême de ces circuits, il est judicieux que ce simulateur soit compatible avec l'approche de modélisation haut niveau. L'objectif de cette thèse est de développer un tel simulateur. La solution proposée intègre ce simulateur dans un environnement de développement CAO pour circuit intégré standard, Cadence®. La contrainte sur la précision des résultats nous a amené à développer une nouvelle méthodologie spécifique à la modélisation électrothermique haut-niveau. Ce manuscrit comporte deux grandes parties. Dans la première, la démarche adoptée pour concevoir le simulateur est détaillée. Ensuite, dans la seconde partie, le fonctionnement du simulateur ainsi que la méthode de modélisation haut-niveau mise en place sont présentées, puis validées.
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Books on the topic "Verilog Behavior Modeling"

1

FitzPatrick, Dan. Analog behavioral modeling with the Verilog-A language. Boston: Kluwer Academic Publishers, 1998.

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Analog Behavioral Modeling with the Verilog-A Language. Boston: Kluwer Academic Publishers, 2003. http://dx.doi.org/10.1007/b101821.

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Fitzpatrick, Dan. Analog Behavioral Modeling with the Verilog-A Language. Springer, 2013.

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Book chapters on the topic "Verilog Behavior Modeling"

1

Lee, James M. "Behavioral Modeling." In Verilog® Quickstart, 31–67. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-6113-2_4.

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Lee, James M. "Working with Behavioral Modeling." In Verilog® Quickstart, 83–125. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-6113-2_6.

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Thomas, Donald E., and Philip R. Moorby. "Behavioral Modeling." In The Verilog® Hardware Description Language, 31–58. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-2365-6_2.

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Thomas, Donald E., and Philip R. Moorby. "Behavioral Modeling." In The Verilog® Hardware Description Language, 33–64. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-2464-6_2.

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Thomas, Donald E., and Philip R. Moorby. "Behavioral Modeling." In The Verilog® Hardware Description Language, 47–79. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4757-2896-5_2.

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Thomas, Donald E., and Philip R. Moorby. "Behavioral Modeling Constructs." In The Verilog® Hardware Description Language, 25–50. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3992-6_2.

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LaMeres, Brock J. "Behavioral Modeling of Sequential Logic." In Introduction to Logic Circuits & Logic Design with Verilog, 323–53. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-13605-5_9.

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LaMeres, Brock J. "Behavioral Modeling of Sequential Logic." In Introduction to Logic Circuits & Logic Design with Verilog, 303–30. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-53883-9_9.

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Munoz-Pacheco, J. M., V. R. González Díaz, L. C. Gómez-Pavón, S. Romero-Camacho, F. Sánchez-Guzmán, J. Mateo-Juárez, L. Delgado-Toral, et al. "Behavioral Modeling of Chaos-Based Applications by Using Verilog-A." In Fractional Order Control and Synchronization of Chaotic Systems, 553–79. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-50249-6_19.

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"Behavioral Modeling - 1." In Design Through Verilog HDL, 159–217. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/0471723002.ch7.

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Conference papers on the topic "Verilog Behavior Modeling"

1

Dimplu, Darshan Anandappa, and Fei Wang. "Behavior Modeling of Programmable Metallization Cell Using Verilog-A." In 2012 Ninth International Conference on Information Technology: New Generations (ITNG). IEEE, 2012. http://dx.doi.org/10.1109/itng.2012.107.

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Wang, Li, Xin Wang, Zitao Shi, Rui Ma, Jian Liu, Zongyu Dong, Chen Zhang, et al. "Scalable behavior modeling for nano crossbar ESD protection structures by Verilog-A." In 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2013. http://dx.doi.org/10.1109/nano.2013.6720949.

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Kole, M. "Circuit reliability simulation based on Verilog-A." In 2007 IEEE International Behavioral Modeling and Simulation Workshop. IEEE, 2007. http://dx.doi.org/10.1109/bmas.2007.4437525.

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Yi-Bo Liao, Yan-Kai Chen, and Meng-Hsueh Chiang. "Phase change memory modeling using Verilog-A." In 2007 IEEE International Behavioral Modeling and Simulation Workshop. IEEE, 2007. http://dx.doi.org/10.1109/bmas.2007.4437544.

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Hujer, Martin, Radek Manasek, Jerry O'Mahony, Patrick Feerick, Mark Barry, and Brendan Walsh. "Nanometer Wireless Transceiver Modeling using Verilog-AMS and SystemC." In 2006 IEEE International Behavioral Modeling and Simulation Workshop. IEEE, 2006. http://dx.doi.org/10.1109/bmas.2006.283486.

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Peruzzi, Robert. "Verification of Digitally Calibrated Analog Systems with Verilog-AMS Behavioral Models." In 2006 IEEE International Behavioral Modeling and Simulation Workshop. IEEE, 2006. http://dx.doi.org/10.1109/bmas.2006.283462.

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David, Jonathan. "Verification of CML circuits used in PLL contexts with Verilog-AMS." In 2006 IEEE International Behavioral Modeling and Simulation Workshop. IEEE, 2006. http://dx.doi.org/10.1109/bmas.2006.283477.

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Jander, A., L. Engelbrecht, and P. Dhagat. "Dynamic Verilog-A Model of a Magnetoresistive Spin Valve." In 2008 IEEE International Behavioral Modeling and Simulation Workshop (BMAS 2008). IEEE, 2008. http://dx.doi.org/10.1109/bmas.2008.4751239.

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Sheffler, Thomas J. "Design of a Switch-Level Analog Model for Verilog." In 2008 IEEE International Behavioral Modeling and Simulation Workshop (BMAS 2008). IEEE, 2008. http://dx.doi.org/10.1109/bmas.2008.4751252.

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Makoto Watanabe, Keiichiro Ishihara, Takeyuki Tsuruma, Yasuhiko Iguchi, Yoshiharu Nakajima, and Yasuhito Maki. "Macro-modeling of liquid crystal cell with VerilogA." In 2007 IEEE International Behavioral Modeling and Simulation Workshop. IEEE, 2007. http://dx.doi.org/10.1109/bmas.2007.4437539.

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