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Journal articles on the topic 'Vertical cavity 24 surface emitting laser (VCSEL)'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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1

Peng, Chun-Yen, Wei-Ta Huang, Zhi-Kuang Lu, Shih-Chen Chen, and Hao-Chung Kuo. "Design of High-Power Red VCSEL on a Removable Substrate." Photonics 9, no. 10 (2022): 763. http://dx.doi.org/10.3390/photonics9100763.

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In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with subst

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2

Arms, K. E., K. K. Gan, M. Johnson, et al. "Radiation-Hard ASICs for Optical Data Transmission in the ATLAS Pixel Detector." International Journal of Modern Physics A 20, no. 16 (2005): 3802–4. http://dx.doi.org/10.1142/s0217751x05027667.

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We have developed two radiation-hard ASICs for optical data transmission in the ATLAS pixel detector at the CERN Large Hadron Collider (LHC): a driver chip for a Vertical Cavity Surface Emitting Laser (VCSEL) diode for 80 Mbit/s data transmission from the detector, and a Bi -Phase Mark decoder chip to recover the control data and 40 MHz clock which is received optically by a PIN diode on the detector side. We present comprehensive results from the final design and from irradiation studies of both circuits with 24 GeV protons up to a total dose of 62 Mrad.

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3

Mao, Minxia, Ting Gong, Kangjie Yuan, et al. "A Coin-Sized Oxygen Laser Sensor Based on Tunable Diode Laser Absorption Spectroscopy Combining a Toroidal Absorption Cell." Sensors 23, no. 19 (2023): 8249. http://dx.doi.org/10.3390/s23198249.

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Laser gas sensors with small volume and light weight are in high demand in the aerospace industry. To address this, a coin-sized oxygen (O2) sensor has been successfully developed based on a small toroidal absorption cell design. The absorption cell integrates a vertical-cavity surface-emitting laser (VCSEL) and photodetector into a compact unit, measuring 90 × 40 × 20 mm and weighing 75.16 g. Tunable diode laser absorption spectroscopy (TDLAS) is used to obtain the O2 spectral line at 763 nm. For further improving the sensitivity and robustness of the sensor, wavelength modulation spectroscop

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4

Iga, Kenichi. "Vertical-Cavity Surface-Emitting Laser (VCSEL)." Proceedings of the IEEE 101, no. 10 (2013): 2229–33. http://dx.doi.org/10.1109/jproc.2013.2275016.

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5

Lear, Kevin L., and Eric D. Jones. "Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (2002): 497–501. http://dx.doi.org/10.1557/mrs2002.166.

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AbstractThis issue of MRS Bulletin presents a review of the progress that vertical-cavity surface-emitting lasers (VCSELs) have made throughout the wavelength spectrum. A VCSEL is a semiconductor laser diode in which light propagates normal to the epitaxial layers. In its older cousin, the Fabry—Pérot laser, light propagates in the plane of the epitaxial layers and reflects from mirrors formed by cleaving a crystal facet across the active layers. No cleaving is required for VCSEL mirrors, which are formed from multiple layers of epitaxially grown or otherwise-deposited thin films. The simple t

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6

JIN, R., G. KHITROVA, D. BOGGAVARAPU, et al. "PHYSICS OF SEMICONDUCTOR VERTICAL-CAVITY SURFACE-EMITTING LASERS." Journal of Nonlinear Optical Physics & Materials 04, no. 01 (1995): 141–61. http://dx.doi.org/10.1142/s0218863595000070.

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We describe recent progress in the physics of light-matter interactions in vertical-cavity surface-emitting-laser (VCSEL) structures. Enhanced spontaneous emission indicates strong medium-cavity coupling. The linewidth broadening factor is more accurately determined in VCSELs, supporting many-body theory of semiconductor nonlinearities. Threshold behavior of VCSELs and microlasers is investigated by photon-correlation experiment and quantum laser theory with emphasis on the importance of second-order coherence properties. External optical injection into a VCSEL cavity leads to injection lockin

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7

Fujita, Motonobu, Makoto Naruse, and Masatoshi Ishikawa. "Parallel Confocal Microscope using Vertical-Cavity Surface Emitting Laser Array." Microscopy and Microanalysis 7, S2 (2001): 1004–5. http://dx.doi.org/10.1017/s1431927600031093.

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Here we show a confocal microscope system where a vertical-cavity surface-emitting laser (VCSEL) array is introduced for the parallel probing beams.A VCSEL array is a semiconductor laser device that emits circular beams vertically to the surface of the chip, which can directly be used as confocal laser microscope applications. The VCSEL device itself can be the parallel beam source of the confocal laser system, whereas in conventional Nipkow disc-based system, several lenses are required to form probing beams. Figure 1 shows the basic structure of VCSEL-based confocal microscope systems. Since

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8

Breiland, W. G., A. A. Allerman, J. F. Klem, and K. E. Waldrip. "Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (2002): 520–24. http://dx.doi.org/10.1557/mrs2002.170.

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AbstractDistributed Bragg reflectors (DBRs) not only serve as high-reflectance mirrors to define the laser cavity of a vertical-cavity surface-emitting laser (VCSEL), but they also must conduct electricity, confine currents, and provide a single-crystal template for the gain region of the laser. Basic optical and electrical properties of DBRs are presented in this article. Three examples of DBR structures used in VCSEL applications from the ultraviolet to the infrared are given to illustrate the complexity and range of materials science issues that are encountered in DBR growth. Fabrication is

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9

Liu, Anjin, Jing Zhang, Chenxi Hao, Minglu Wang, and Wanhua Zheng. "Surface-Emitting Lasers with Surface Metastructures." Photonics 10, no. 5 (2023): 509. http://dx.doi.org/10.3390/photonics10050509.

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Vertical-cavity surface-emitting lasers (VCSELs) have been widely used in consumer electronics, light detection and ranging, optical interconnects, atomic sensors, and so on. In this paper, a VCSEL with the surface metastructure like one-dimensional high-contrast grating (HCG), based on the HCG-DBR vertical cavity, was first designed and fabricated. The polarization characteristic of the HCG-VCSEL were experimentally studied. The p-doped top 4-pair DBR for the current spreading and the direction shift between the HCG and the elliptical oxide aperture may result in a low orthogonal polarization

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10

Vladimirov, A. G., A. Pimenov, S. V. Gurevich, K. Panajotov, E. Averlant, and M. Tlidi. "Cavity solitons in vertical-cavity surface-emitting lasers." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2027 (2014): 20140013. http://dx.doi.org/10.1098/rsta.2014.0013.

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We investigate a control of the motion of localized structures (LSs) of light by means of delay feedback in the transverse section of a broad area nonlinear optical system. The delayed feedback is found to induce a spontaneous motion of a solitary LS that is stationary and stable in the absence of feedback. We focus our analysis on an experimentally relevant system, namely the vertical-cavity surface-emitting laser (VCSEL). We first present an experimental demonstration of the appearance of LSs in a 80 μm aperture VCSEL. Then, we theoretically investigate the self-mobility properties of the LS

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11

Dikopoltsev, Alex, Tristan H. Harder, Eran Lustig, et al. "Topological insulator vertical-cavity laser array." Science 373, no. 6562 (2021): 1514–17. https://doi.org/10.5281/zenodo.13912560.

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<strong>Topological insulator lasers are arrays of semiconductor lasers that exploit fundamental features of topology to force all emitters to act as a single coherent laser. Here, we demonstrate a topological insulator Vertical Cavity Surface Emitting Laser (VCSEL) array. Each VCSEL emits vertically, but the in-plane coupling between emitters in the topological-crystalline platform facilitates coherent emission of the whole array. Our topological VCSEL array emits at a single frequency, and displays interference highlighting that the emitters are mutually coherent. Our experiments exempl

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12

CHANG-HASNAIN, C. J., Y. A. WU, L. E. ENG, and G. S. LI. "VERTICAL CAVITY SURFACE EMITTING LASER ARRAYS FOR WAVELENGTH DIVISION MULTIPLEXING APPLICATIONS." International Journal of High Speed Electronics and Systems 05, no. 04 (1994): 569–92. http://dx.doi.org/10.1142/s0129156494000231.

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The capability to fabricate two-dimensional (2D) semiconductor diode laser array is one of the most important steps towards making wafer-scale low-cost lasers. The recent emergence of vertical cavity surface emitting laser (VCSEL) facilitates the fabrication of such large 2D arrays. In this paper, we review the recent progress on a novel largeaperture single-mode VCSEL and a 2D multiple-wavelength VCSEL array for ultra-high bandwidth applications. We demonstrate a passive antiguide region (PAR) VCSEL which emits a stable single mode with very low threshold, a large aperture, and a fixed polari

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13

Pang, Chao, Changling Yan, and Jinghang Yang. "New electrode structure vertical cavity surface emitting semiconductor laser and its array." Journal of Physics: Conference Series 2921, no. 1 (2024): 012014. https://doi.org/10.1088/1742-6596/2921/1/012014.

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Abstract A new electrode structure is designed to enhance the uniformity of current distribution in vertical-cavity semiconductor lasers, thereby reducing device heat generation and improving both efficiency and output laser beam quality. Simulation software was employed to analyze the internal current distribution of both new electrode structure VCSEL and the traditional structure VCSEL. Subsequently, the new electrode structure VCSEL was successfully fabricated, and its output characteristics of the single VCSEL device were evaluated at room temperature. The laser wavelength measured 847nm,

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14

He, Xuanjun. "Vertical Cavity Surface Emitting Laser technology: A comprehensive review." Applied and Computational Engineering 70, no. 1 (2024): 193–98. http://dx.doi.org/10.54254/2755-2721/70/20240992.

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Vertical Cavity Surface Emitting Laser (VCSEL) technology has become an indispensable element in optical communication systems and optoelectronics due to its many advantages, and the unique characteristics of VCSELs, including vertical emission, high-speed operation, and low power consumption, have attracted much interest from researchers and industry professionals. This paper provides a comprehensive overview of VCSELs, explaining their basic principles and two commonly used structures. It also delves into the field of optical communications, highlighting the challenges faced in the current d

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15

Choquette, Kent D. "Vertical-Cavity Surface-Emitting Lasers: Light for the Information Age." MRS Bulletin 27, no. 7 (2002): 507–11. http://dx.doi.org/10.1557/mrs2002.168.

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AbstractThe emergence of miniature light sources such as the vertical-cavity surface-emitting laser (VCSEL) is poised to advance the information age. The development of VCSELs has stimulated a wide range of materials research into epitaxial growth and device-fabrication technologies. In this article, current and emerging applications that are guiding the commercial development of VCSELs are first considered, followed by discussions of the VCSEL epitaxial structure and fabrication technologies. This brief overview will also mention recent efforts aimed at achieving long-wavelength VCSELs grown

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16

Hua, Zinan, Hailiang Dong, Zhigang Jia, Wei Jia, Lin Shang, and Bingshe Xu. "Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance." Photonics 12, no. 3 (2025): 276. https://doi.org/10.3390/photonics12030276.

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An electrically injected vertical-cavity surface-emitting laser (VCSEL) with quantum-well-embedded InGaN quantum dots (QDs) as the active region was designed. The InGaN QD size and cavity length were optimized using PICS3D simulation software to achieve a high-performance InGaN QD-embedded VCSEL. A comparative analysis between the InGaN QD VCSEL and the traditional InGaN quantum well VCSEL was conducted, and the results demonstrated that the InGaN QD VCSEL achieved higher stimulated recombination radiation and internal quantum efficiency. The threshold current was reduced to 4 mA, correspondin

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17

Affolderbach, C., A. Nagel, S. Knappe, C. Jung, D. Wiedenmann, and R. Wynands. "Nonlinear spectroscopy with a vertical-cavity surface-emitting laser (VCSEL)." Applied Physics B: Lasers and Optics 70, no. 3 (2000): 407–13. http://dx.doi.org/10.1007/s003400050066.

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18

Yarn, Kao Feng, Wen Chung Chang, and Wei Ching Chuang. "Analyses of New Diffraction Optics Element Design by Polymer Gratings." Materials Science Forum 663-665 (November 2010): 389–92. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.389.

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A new diffraction optics element (DOE) which combines semiconductor laser and polymer-based DOE processing technology into a single optoelectronic polymer device is proposed. To directly combine the VCSEL (Vertical-Cavity Surface-Emitting Laser) with DOE, DOE surface profile can be integrated on the top of VCSEL utilizing polymer gratings by soft-lithography technique. Such a new kind of polymer-based DOE-VCSEL can control spatial distribution of emitting laser energy and output angle. Through the innovative development, it can be predicted that the optical loss and traveling distance in DOE s

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19

Panajotov, Krassimir, Marc Sciamanna, Ignace Gatare, Mikel Arteaga, and Hugo Thienpont. "Nonlinear Dynamics of Vertical-Cavity Surface-Emitting Lasers." Advances in Optical Technologies 2011 (October 11, 2011): 1–16. http://dx.doi.org/10.1155/2011/469627.

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Nonlinear dynamics of Vertical-Cavity Surface-Emitting Lasers (VCSELs) induced by optical injection, optical feedback, current modulation and mutual coupling is reviewed. Due to the surface emission and cylindrical symmetry VCSELs lack strong polarization anisotropy and may undergo polarization switching. Furthermore, VCSELs may emit light in multiple transverse modes. These VCSEL properties provide new features to the rich nonlinear dynamics induced by an external perturbation. We demonstrate for the case of orthogonal optical injection that new Hopf bifurcation on a two-polarization-mode sol

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20

North, William, Nusrat Jahan, Pawel Strzebonski, and Kent D. Choquette. "Modal characteristics of coupled vertical cavity surface emitting laser diode arrays." Journal of Applied Physics 132, no. 17 (2022): 173102. http://dx.doi.org/10.1063/5.0119912.

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The modal characteristics of dual-element coupled vertical cavity surface emitting laser (VCSEL) arrays are analyzed numerically and experimentally. A photonic crystal pattern etched into the top mirror optically defines the two elements of the array that are independently electrically biased. Using a two-dimensional complex waveguide analysis, we incorporate the effects of varying temperature and electron plasma-induced index suppression arising from asymmetric injection. The simulations are compared to experimental characterization of output power, lasing spectra, and far-field beam profile

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21

Liu, Yuan Yuan, Rui Cong Liu, and Xue Chen. "Slant-Face Fiber Side Coupling of Vertical Cavity Surface Emitting Laser." Applied Mechanics and Materials 509 (February 2014): 155–58. http://dx.doi.org/10.4028/www.scientific.net/amm.509.155.

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Slant-face fiber side coupling of vertical cavity surface emitting laser (VCSEL) is reported. The direct coupling efficiency can reach 70%. The relative coupling efficiency variety caused by the position displacement and angle displacement was studied respectively. It is found that the cylinder of the fiber can collimate the divergent laser beam and improve aligning tolerance.

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22

Kisker, David W., and Jeff E. Bisberg. "Infrared Vertical-Cavity Surface-Emitting Lasers: An Industrial Perspective." MRS Bulletin 27, no. 7 (2002): 512–19. http://dx.doi.org/10.1557/mrs2002.169.

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AbstractOptical components based on vertical-cavity surface-emitting lasers (VCSELs) are moving from 850-nm wavelengths to 1.31-μm and 1.55-μm wavelengths. These long-wavelength devices, enabled by new developments in materials technology, will compete directly with distributed-feedback (DFB) and Fabry-Pérot (FP) laser technologies in fiber-optic markets. In addition, the unique properties of VCSELs are opening up a new category of optically integrated components that are not possible with traditional edge-emitting laser source technologies. These VCSEL structures, such as linear and two-dimen

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23

Jia, Leilei, Xin Qian, and Lingyu Ai. "Fourier Ptychography-Based Measurement of Beam Divergence Angle for Vertical Cavity Surface-Emitting Laser." Photonics 10, no. 7 (2023): 777. http://dx.doi.org/10.3390/photonics10070777.

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The Vertical Cavity Surface-Emitting Laser (VCSEL) has led to the rapid development of advanced fields such as communication, optical sensing, smart cars, and more. The accurate testing of VCSEL beam quality is an important prerequisite for its effective application. In this paper, a method for measuring the divergence angle of the VCSEL far field spot based on transmissive Fourier ptychography is proposed. First, a single CCD multi-angle VCSEL far-field spot acquisition system is designed. Second, based on the proposed Fourier ptychographic algorithm with synchronous optimization of embedded

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24

Zhang, Jian-Wei, Xing Zhang, Yin-Li Zhou, et al. "1550-nm vertical-cavity surface-emitting laser with single-mode power of milliwatts." Acta Physica Sinica 71, no. 6 (2022): 064204. http://dx.doi.org/10.7498/aps.71.20212132.

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We report on a 1550-nm vertical-cavity surface-emitting laser (VCSEL) with single mode power of 0.97 mW. The quaternary AlGaInAs quantum well is designed to improve the gain level in an active region. The mesa structure with tunneling capability is designed and fabricated to achieve the efficient carrier injection and the transverse mode guiding. The distributed Bragg reflector (DBR) mirror of 1550 nm VCSEL consists of the semiconductor DBR and outer dielectric DBR. The central wavelength of VCSEL is 1547.6 nm. The maximum output power of 2.6 mW is achieved at 15 ℃, and the maximum single-mode

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Shen, Chih-Chiang, Yun-Ting Lu, Yen-Wei Yeh, et al. "Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction." Crystals 9, no. 4 (2019): 187. http://dx.doi.org/10.3390/cryst9040187.

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In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 m

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Luo, Huiwen, Junze Li, and Mo Li. "Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer." Micromachines 10, no. 10 (2019): 694. http://dx.doi.org/10.3390/mi10100694.

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The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded AlxGa1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation result

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Yu, Tai-Cheng, Wei-Ta Huang, Hsiang-Chen Wang, et al. "Design and Simulation of InGaN-Based Red Vertical-Cavity Surface-Emitting Lasers." Micromachines 15, no. 1 (2023): 87. http://dx.doi.org/10.3390/mi15010087.

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We propose a highly polarized vertical-cavity surface-emitting laser (VCSEL) consisting of staggered InGaN multiple quantum wells (MQWs), with the resonance cavity and polarization enabled by a bottom nanoporous (NP) n-GaN distributed Bragg reflectors (DBRs), and top TiO2 high-index contrast gratings (HCGs). Optoelectronic simulations of the 612 nm VCSEL were systematically and numerically investigated. First, we investigated the influences of the NP DBR and HCG geometries on the optical reflectivity. Our results indicate that when there are more than 17 pairs of NP GaN DBRs with 60% air voids

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28

Armghan, Ammar, Khaled Aliqab, Farman Ali, Fayadh Alenezi, and Meshari Alsharari. "Vertical Cavity Surface Emitting Laser Performance Maturing through Machine Learning for High-Yield Optical Wireless Network." Micromachines 13, no. 12 (2022): 2132. http://dx.doi.org/10.3390/mi13122132.

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The high-yield optical wireless network (OWN) is a promising framework to strengthen 5G and 6G mobility. In addition, high direction and narrow bandwidth-based laser beams are enormously noteworthy for high data transmission over standard optical fibers. Therefore, in this paper, the performance of a vertical cavity surface emitting laser (VCSEL) is evaluated using the machine learning (ML) technique, aiming to purify the optical beam and enable OWN to support high-speed, multi-user data transmission. The ML technique is applied on a designed VCSEL array to optimize paths for DC injection, AC

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Fang, Yunfeng, Yang Zhang, Chuanchuan Li, Jian Li, Yongli Wang, and Xin Wei. "An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application." Photonics 11, no. 3 (2024): 207. http://dx.doi.org/10.3390/photonics11030207.

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A highly strained InGaAs quantum well (QW) vertical-cavity surface-emitting laser (VCSEL) with low threshold current density, high efficiency and output power emissions around 1130 nm was grown by MOCVD. Its static characteristics at room temperature and high operation temperature were studied in detail. The 7 μm oxide aperture device exhibits a threshold current of 0.68 mA, corresponding to a threshold current density of 1.7 kA/cm2. The slope efficiency is 0.43 W/A and the maximum output power is 3.3 mW. Continuous-wave (CW) operation in the 10–80 °C temperature range is observed. The slope e

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Kim, Kyong Hon, Seoung Hun Lee та Vijay Manohar Deshmukh. "Dynamics of 1.55 μm Wavelength Single-Mode Vertical-Cavity Surface-Emitting Laser Output under External Optical Injection". Advances in Optical Technologies 2012 (14 листопада 2012): 1–10. http://dx.doi.org/10.1155/2012/247070.

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We review the temporal dynamics of the laser output spectrum and polarization state of 1.55 μm wavelength single-mode (SM) vertical-cavity surface-emitting lasers (VCSELs) induced by external optical beam injection. Injection of an external continuous-wave laser beam to a gain-switched SM VCSEL near the resonance wavelength corresponding to its main polarization-mode output was critical for improvement of its laser pulse generation characteristics, such as pulse timing-jitter reduction, linewidth narrowing, pulse amplitude enhancement, and pulse width shortening. Pulse injection of pulse width

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Wu, Haonan, Wenning Fu, Dufei Wu, and Milton Feng. "2.9 K VCSEL demonstrates 100 Gbps PAM-4 optical data transmission." Applied Physics Letters 121, no. 1 (2022): 011102. http://dx.doi.org/10.1063/5.0095321.

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A cryogenic packaged vertical-cavity-surface-emitting laser (VCSEL) with microwave input and coupled with OM4 fiber for optical output was developed and demonstrated laser operation from 295 to 2.9 K. Record 2.9 K optical data links of 100 Gbps pulsed amplitude modulation 4-level have been demonstrated with an energy per bit ∼153.4 fJ/bit when TDECQ = 3.79 dB. The energy/bit is limited by the link path bandwidth resulted from the input cable loss to 2.9 K VCSEL and can be further improved. Thus, the VCSEL optical data link is proven to be a viable solution for cryogenic communication and compu

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Moatlhodi, Ogomoditse Oduetse, Ravi Samikannu, and Nonofo M. J. Ditshego. "Simulation and analysis of a Single Mode Indium Gallium Arsenide Phosphide Vertical Cavity Surface Emitting Laser for Optical Communication." Advanced Engineering Forum 43 (November 16, 2021): 93–109. http://dx.doi.org/10.4028/www.scientific.net/aef.43.93.

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This present work is about simulating and analysing a Vertical Cavity Surface Emitting Laser (VCSEL) structure used in optical fibre communication systems. In this paper a VCSEL structure made of seven Quantum Wells of Indium Gallium Arsenide Phosphide (InGaAsP) emitting at 1550 nm is simulated. The device is analysed looking at the following characteristics: Direct current current and voltage (IV) characteristics, light power against electrical bias, optical gain against electrical bias, light distribution over the structure, output power and threshold current. Specification of material chara

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Krishna, K. Murali, M. Ganesh Madhan, and P. Ashok. "Study of Gain Switching in Vertical Cavity Surface Emitting Laser under Different Electrical Pulse Inputs." Defence Science Journal 70, no. 5 (2020): 538–41. http://dx.doi.org/10.14429/dsj.70.16340.

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Vertical cavity surface emitting laser (VCSEL) is a strong candidate for short pulse generation among the other semiconductor lasers in the era of laser technology. A 1550 nm, low power VCSEL is excited under different current shapes and the chief laser parameters are found out. The concept of gain switching under various current profiles are utilized effectively to bring out maximum laser power with minimum pulse width, which are the essential factors for long haul high speed optical data transmission. For a haversine electrical current input with 3.7 Ith amplitude, a laser peak power of 2.2

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SCHNEIDER, R. P., J. A. LOTT, M. HAGEROTT CRAWFORD, and K. D. CHOQUETTE. "EPITAXIAL DESIGN AND PERFORMANCE OF AlGaInP RED (650–690 nm) VCSELs." International Journal of High Speed Electronics and Systems 05, no. 04 (1994): 625–66. http://dx.doi.org/10.1142/s0129156494000255.

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Progress in addressing critical epitaxial design issues associated with AlGaInP -based visible (red) vertical-cavity surface-emitting laser (VCSEL) diodes is reviewed, with emphasis on those issues that differentiate red VCSELs from conventional AlGaAs -based near-IR VCSELs. Key issues include epitaxial growth techniques for red VCSELs, the unique properties of AlGaInP alloys and heterostructures, design and growth of visible distributed Bragg reflectors, and integration of AlGaInP and AlGaAs hetero-structures into the hybrid VCSEL device structure. The performance characteristics of AlGaInP/A

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Yu, Bing Liang, Ji Chen та Wen Yuan Li. "10Gbps VCSEL Driver in 0.18μm CMOS Technology". Advanced Materials Research 760-762 (вересень 2013): 147–51. http://dx.doi.org/10.4028/www.scientific.net/amr.760-762.147.

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A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.

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Shashkin, I. S., M. I. Kondratov, A. E. Grishin, K. E. Pevchikh, S. O. Slipchenko, and N. A. Pikhtin. "Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources." Computer Optics 48, no. 4 (2024): 535–41. http://dx.doi.org/10.18287/2412-6179-co-1446.

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In the scope of a computational experiment, high-contrast gratings (HCG) formed on a silicon-on-insulator (SOI) platform within vertical-cavity surface-emitting lasers (VCSELs) were studied for multispectral laser sources. A simulation model for spectral characteristics calculation is proposed, which includes two heterogeneously integrated parts of the VCSEL: 1) the lower output mirror based on a HCG grating in the silicon layer of the SOI surrounded by air cavities to enhance the contrast of the HCG; 2) the semiconductor VCSEL structure with an air aperture for current and optical confinement

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Zhang, Chen, Lishan Fu, Jisheng Wang, and Baolu Guan. "Narrow linewidth optical feedback vertical cavity surface emitting lasers based on cholesteric liquid crystal." Journal of Physics: Conference Series 2826, no. 1 (2024): 012013. http://dx.doi.org/10.1088/1742-6596/2826/1/012013.

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Abstract In this paper, we present a narrow linewidth vertical cavity surface emitting laser (VCSEL) based on cholesteric liquid crystal (CLC). We investigated the impact of incorporating optical feedback into the external cavity on the linewidth of VCSELs, and successfully utilized CLC film as the reflector for the external cavity. This enabled us to achieve mode control and linewidth compression in VCSELs through optical feedback. The linewidth of the optically feedbacked VCSEL was measured at different driving currents and oxidation apertures. Under the same oxidation aperture, when the dri

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Li, Jian, Vincent Henneken, Marcus Louwerse, and Ronald Dekker. "Optical Data Link Module for Data Transmission in Smart Catheters." International Symposium on Microelectronics 2020, no. 1 (2020): 000169–73. http://dx.doi.org/10.4071/2380-4505-2020.1.000169.

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Abstract We demonstrate a stand-alone optical data link module (ODLM) that fits in the limited space budget of smart imaging catheters. The module is based on an extension of the Flex-to-Rigid (F2R) technology platform for miniaturized system integration. The ODLM is a silicon-based interposer that comprises a commercially available Vertical Cavity Surface Emitting Laser (VCSEL), which has its electrical contacts and laser emitting spot on the same surface. With the flexible interconnects, the ODLM reroutes the flip-chipped VCSEL electrical contacts to the side that is perpendicular to the sur

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Liu, Anjin, Chenxi Hao, Jingyu Huo, et al. "Single-fundamental-mode cryogenic (3.6 K) 850-nm oxide-confined VCSEL." Journal of Semiconductors 45, no. 10 (2024): 102401. http://dx.doi.org/10.1088/1674-4926/24070025.

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Abstract Cryogenic oxide-confined vertical-cavity surface-emitting laser (VCSEL) has promising application in cryogenic optical interconnect for cryogenic computing. In this paper, we demonstrate a cryogenic 850-nm oxide-confined VCSEL at around 4 K. The cryogenic VCSEL with an optical oxide aperture of 6.5 μm in diameter can operate in single fundamental mode with a side-mode suppression-ratio of 36 dB at 3.6 K, and the fiber-coupled output power reaches 1 mW at 5 mA. The small signal modulation measurements at 298 and 292 K show the fabricated VCSEL has the potential to achieve a high modula

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Srinivasan, Muralikrishnan, Alireza Pourafzal, Stavros Giannakopoulos, Peter Andrekson, Christian Häger, and Henk Wymeersch. "Learning Gradient-Based Feed-Forward Equalizer for VCSELs." Photonics 11, no. 10 (2024): 943. http://dx.doi.org/10.3390/photonics11100943.

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Vertical cavity surface-emitting laser (VCSEL)-based optical interconnects (OI) are crucial for high-speed data transmission in data centers, supercomputers, and vehicles, yet their performance is challenged by harsh and fluctuating thermal conditions. This paper addresses these challenges by integrating an ordinary differential equation (ODE) solver within the VCSEL communication chain, leveraging the adjoint method to enable effective gradient-based optimization of pre-equalizer weights. We propose a machine learning (ML) approach to optimize feed-forward equalizer (FFE) weights for VCSEL tr

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Hong, Kuo-Bin, Wei-Ta Huang, Hsin-Chan Chung, et al. "High-Speed and High-Power 940 nm Flip-Chip VCSEL Array for LiDAR Application." Crystals 11, no. 10 (2021): 1237. http://dx.doi.org/10.3390/cryst11101237.

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In this paper, we demonstrate the design and fabrication of a high-power, high-speed flip-chip vertical cavity surface emitting laser (VCSEL) for light detection and ranging (LiDAR) systems. The optoelectronic characteristics and modulation speeds of vertical and flip-chip VCSELs were investigated numerically and experimentally. The thermal transport properties of the two samples were also numerically investigated. The measured maximum output power, slope efficiency (SE) and power conversion efficiency (PCE) of a fabricated flip-chip VCSEL array operated at room-temperature were 6.2 W, 1.11 W/

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DEPPE, D. G., та D. L. HUFFAKER. "EXTENDED WAVELENGTH (1.0 to 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS". International Journal of High Speed Electronics and Systems 09, № 04 (1998): 979–1005. http://dx.doi.org/10.1142/s0129156498000403.

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An important advance in InGaAs/GaAs quantum dot lasers has been the demonstration of lasing at wavelengths significantly longer than that possible using InGaAs strained quantum wells, extending beyond 1.3 μm. These fully GaAs-based active regions are compatible with commercial vertical-cavity surface-emitting laser (VCSEL) technology based on selective oxidation, and offer novel performance due to their three-dimensional electronic confinement. This chapter reviews the status of long wavelength quantum dot edge-emitting lasers and VCSELs, and presents some of the new physical principles needed

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Hisham, Hisham K., Nadiah Husseini Zainol Abidin, Mohammed Thamer Alresheedi, Ahmad Fauzi Abas, Khoon Eng Ng, and Mohd Adzir Mahdi. "Temperature Effects on Power Characteristics of Vertical-Cavity Surface-Emitting Lasers." Journal of Nanoelectronics and Optoelectronics 19, no. 3 (2024): 278–83. http://dx.doi.org/10.1166/jno.2024.3574.

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This paper presents a numerical study based on temperature dependency on Auger process, examining the impact of temperature change and laser cavity active region parameters on the output power characteristics (Pout) of vertical-cavity surface-emitting lasers (VCSELs). The active region parameters include active region diameter, effective length, active region thickness, injection current, and mirror reflectivity. With increasing temperature, Pout reduction rate rises in proportion to active region diameter growth as opposed to effective length or active region thickness growth. It was determin

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Heidari, Elham, Moustafa Ahmed, Hamed Dalir, Ahmed Bakry, Ahmed Alshahrie, and Volker J. Sorger. "VCSEL with multi-transverse cavities with bandwidth beyond 100 GHz." Nanophotonics 10, no. 14 (2021): 3779–88. http://dx.doi.org/10.1515/nanoph-2021-0442.

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Abstract To fulfill the demands of high-speed photonic applications, researchers, and engineers have been working to improve the modulation bandwidth (MBW) of semiconductor lasers. We extend our prior work on modeling a vertical-cavity surface-emitting laser (VCSEL) with multiple transverse-coupled-cavities (MTCCs) to evaluate the feasibility of boosting MBW beyond 100 GHz in this study. Because of the strong coupling of slow-light feedback from nearby lateral transverse coupled cavities (TCCs) into the VCSEL cavity, the laser has a high modulation performance. The intensity modulation respons

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Hanamaki, Yoshihiko, Hidefumi Akiyama, and Yasuhiro Shiraki. "Spontaneous emission alteration in InGaAs/GaAs vertical cavity surface emitting laser (VCSEL) structures." Semiconductor Science and Technology 14, no. 9 (1999): 797–803. http://dx.doi.org/10.1088/0268-1242/14/9/309.

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Mu, Jingfei, Yinli Zhou, Chao Chen, et al. "Simulation of Modal Control of Metal Mode-Filtered Vertical-Cavity Surface-Emitting Laser." Sensors 24, no. 14 (2024): 4700. http://dx.doi.org/10.3390/s24144700.

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In this study, a novel metal-dielectric film mode filter structure that can flexibly regulate the transverse mode inside vertical-cavity surface-emitting lasers (VCSELs) is proposed. The number, volume, and stability of transverse modes inside the VCSEL can be adjusted according to three key parameters—the oxide aperture, the metal aperture, and the distance between the oxide aperture and the metal aperture—to form a flexible window, and a new parameter is defined to describe the mode identification. This study provides a complete simulation theory basis and calculation method, which is of gre

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Bobrov M. A., Blokhin S. A., Maleev N. A., et al. "Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer." Technical Physics Letters 48, no. 15 (2022): 41. http://dx.doi.org/10.21883/tpl.2022.15.54264.18940.

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The possibility of using vertical-emitting lasers with intracavity contacts (IC-VCSEL) and a rhomboidal oxide current aperture for creating a non-zero magnetic field optically pumped atomic magnetometers (OPM) with a 133Cs vapor cell for magnetoencephalographic (MEG) systems were demonstrated. Relative intensity noise (RIN) and polarization resolved RIN of the IC-VCSEL in the 895 nm range with different mirror losses (linewidth) in the frequency range from 1 Hz to 100 kHz were experimentally investigated. Lasers with low mirror loss (narrow linewidth) have polarization resolved RIN comparable

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Lin, Chiao-Chih, Pei-Wen Chan, Peter Chen, et al. "Controlled Cavity Length and Wide-Spectrum Lasing in FAMACsPb(BrI)3 Ternary Perovskite Vertical-Cavity Surface-Emitting Lasers with an All-Dielectric Dielectric Bragg Reflector." Crystals 13, no. 10 (2023): 1517. http://dx.doi.org/10.3390/cryst13101517.

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In this study, we utilized a dielectric Bragg reflector (DBR) as a mirror and positioned a wide-spectrum FAMACsPb(BrI)3 halide perovskite film between two DBRs to construct a vertical-cavity surface-emitting laser (VCSEL) structure. The top and bottom DBRs were connected using optical adhesive, allowing us to control the cavity length by applying external force. Through this approach, we achieved operation at the desired wavelength. Due to the exceptional optical gain provided by FAMACsPb(BrI)3, we successfully observed multimode and lasing phenomena at room temperature under continuous-wave (

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Chizhevsky, V. N. "Amplification of optical signals in a bistable vertical-cavity surface-emitting laser by vibrational resonance." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 379, no. 2192 (2021): 20200241. http://dx.doi.org/10.1098/rsta.2020.0241.

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The paper presents the results of the experimental study of an application of the phenomenon of vibrational resonance (VR) for enhancement of the response of a bistable vertical-cavity surface-emitting laser (VCSEL) to the effect of optical modulating signals. Specifically, two different cases were investigated: (a) the control of all-optical switching caused by a modulated orthogonal optical injection from another VCSEL and (b) the amplification of autodyne signals from a vibrating diffusely reflecting surface in the self-mixing optical interferometry. It is experimentally demonstrated that a

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He, Yi Ting, Xiao Yan Lei, Zhi Ren Qiu, et al. "The Characteristics of Optical Pumped GaN-Based Vertical Cavity Surface Emitting Laser Structures." Applied Mechanics and Materials 692 (November 2014): 187–90. http://dx.doi.org/10.4028/www.scientific.net/amm.692.187.

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Time-resolved photoluminescence spectra of vertical cavity surface emitting laser (VCSEL) structures under different excitation intensity are investigated. The effect of the distributed Bragg reflectors (DBR) on the laser emission and the mechanism of multi-longitudinal-mode are analysed. A broad peak around 2.80eV is observed from the structure without DBR cavity when pumped under low excitation intensity. At higher excitation density up to 21.4kW/cm2, a lasing peak appears at 2.86eV, and exhibits a rapid growth and red shift with the increase of the excitation density. The decay time of the

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