Relevant bibliographies by topics / Vertical Cavity Surface Emitting

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Vertical Cavity Surface Emitting'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Vertical Cavity Surface Emitting"

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Lear, Kevin L., and Eric D. Jones. "Vertical-Cavity Surface-Emitting Lasers." MRS Bulletin 27, no. 7 (2002): 497–501. http://dx.doi.org/10.1557/mrs2002.166.

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AbstractThis issue of MRS Bulletin presents a review of the progress that vertical-cavity surface-emitting lasers (VCSELs) have made throughout the wavelength spectrum. A VCSEL is a semiconductor laser diode in which light propagates normal to the epitaxial layers. In its older cousin, the Fabry—Pérot laser, light propagates in the plane of the epitaxial layers and reflects from mirrors formed by cleaving a crystal facet across the active layers. No cleaving is required for VCSEL mirrors, which are formed from multiple layers of epitaxially grown or otherwise-deposited thin films. The simple twist in the direction of the laser beam with respect to the epitaxial layers is responsible for most of the unique attributes of VCSELs, which arise from their short cavity length, their completely lithographically defined cross section, and their reliance on only wafer-scale processes for device fabrication. The articles in this issue cover a range of topics, including blue devices, short-wavelength communications lasers, recent advances in 1.3-μm VCSELs, fundamental materials issues related to distributed Bragg reflectors, theoretical quantum-well gain calculations, and work on quantum-dot VCSELs.
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Webb, C. E. "Vertical-cavity surface emitting lasers." Optics and Lasers in Engineering 33, no. 1 (2000): 83–84. http://dx.doi.org/10.1016/s0143-8166(00)00029-4.

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Iga, Kenichi. "Vertical Cavity Surface Emitting Lasers Photonics." Japanese Journal of Applied Physics 45, no. 8B (2006): 6541–43. http://dx.doi.org/10.1143/jjap.45.6541.

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Felix, C. L., W. W. Bewley, I. Vurgaftman, et al. "Midinfrared vertical-cavity surface-emitting laser." Applied Physics Letters 71, no. 24 (1997): 3483–85. http://dx.doi.org/10.1063/1.120366.

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Iga, Kenichi. "Vertical-Cavity Surface-Emitting Laser (VCSEL)." Proceedings of the IEEE 101, no. 10 (2013): 2229–33. http://dx.doi.org/10.1109/jproc.2013.2275016.

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Geels, R. S., S. W. Corzine, and L. A. Coldren. "InGaAs vertical-cavity surface-emitting lasers." IEEE Journal of Quantum Electronics 27, no. 6 (1991): 1359–67. http://dx.doi.org/10.1109/3.89952.

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Vladimirov, A. G., A. Pimenov, S. V. Gurevich, K. Panajotov, E. Averlant, and M. Tlidi. "Cavity solitons in vertical-cavity surface-emitting lasers." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2027 (2014): 20140013. http://dx.doi.org/10.1098/rsta.2014.0013.

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We investigate a control of the motion of localized structures (LSs) of light by means of delay feedback in the transverse section of a broad area nonlinear optical system. The delayed feedback is found to induce a spontaneous motion of a solitary LS that is stationary and stable in the absence of feedback. We focus our analysis on an experimentally relevant system, namely the vertical-cavity surface-emitting laser (VCSEL). We first present an experimental demonstration of the appearance of LSs in a 80 μm aperture VCSEL. Then, we theoretically investigate the self-mobility properties of the LSs in the presence of a time-delayed optical feedback and analyse the effect of the feedback phase and the carrier lifetime on the delay-induced spontaneous drift instability of these structures. We show that these two parameters affect strongly the space–time dynamics of two-dimensional LSs. We derive an analytical formula for the threshold associated with drift instability of LSs and a normal form equation describing the slow time evolution of the speed of the moving structure.
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IGA, KENICHI. "SURFACE EMITTING LASERS." International Journal of High Speed Electronics and Systems 03, no. 03n04 (1992): 263–77. http://dx.doi.org/10.1142/s0129156492000102.

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In this paper we review the progress and basic technology of vertical cavity surface emitting lasers together with related parallel surface operating optical devices. First, the concept of a vertical cavity surface emitting laser is presented, and then currently developed devices and their performances will be introduced. We will then feature some technical issues, such as multilayer structures, 2-dimensional arrays, photonic integration, etc. Lastly, future prospects for parallel lightwave subsystems using surface emitting lasers will be discussed.
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Changling Yan, Changling Yan, Yun Deng Yun Deng, Peng Li Peng Li, Xiaomao Song Xiaomao Song, and Jianwei Shi Jianwei Shi. "Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing." Chinese Optics Letters 10, no. 12 (2012): 122501–3. http://dx.doi.org/10.3788/col201210.122501.

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Haghighi, Nasibeh, Philip Moser, Martin Zorn, and James A. Lott. "19-element vertical cavity surface emitting laser arrays with inter-vertical cavity surface emitting laser ridge connectors." Journal of Physics: Photonics 2, no. 4 (2020): 04LT01. http://dx.doi.org/10.1088/2515-7647/abb3b5.

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Dissertations / Theses on the topic "Vertical Cavity Surface Emitting"

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Sale, Terence Edward. "Vertical cavity surface emitting lasers." Thesis, University of Sheffield, 1993. http://etheses.whiterose.ac.uk/1825/.

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Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE). These incorporate 3 strained InGaAs / GaAs quantum wells placed resonantly in a two wavelength long optical cavity, formed between AlAs / GaAs quarter wave dielectric reflector stacks through which current is injected. The reflection spectra of these stacks is studied in detail; the effects on the laser threshold gain of absorption due to impurities and of errors in growth are investigated. Methods of disruption of the AlAs / GaAs heterointerfaces have been used to reduce the operating voltage. The completed designs use 200A intermediate layers containing 30 or 50% aluminium or a superlattice graded region simpler than that used in previous designs. The effectiveness acceptor dopants; Be in MBE, C and Zn in MOCVD; is studied also. Modulation doping was employed to reduce the effects of optical absorption. Devices were fabricated into mesas by SiC14 reactive ion etching or defined by proton implant isolation. MBE grown devices were resonant at wavelengths in the range 950 to 1059mn with essentially constant (at —1020nm) eihhi transition energies in the wells. A detailed study of the wavelength variation of threshold current density Jth (X)was made. A minimum of 366A.cnr2 was measured at 1018nm in mesa devices. A similar relation is found for ion-implanted devices but the minimum is increased to 535A.cm-2 by incomplete isolation. Gain calculations, including strain effects, are used to explain the Jth(X) variation. Implanted devices offer superior c.w. performance due to reduced thermal and ohmic resistances. The relative offset between the gain spectrum and cavity resonance was examined for c.w. operation. It was found that carrier thermal effects limit the output power rather than shifts in the offset. The bias voltage of MOCVD grown devices is as low as 1.7V and the threshold current is as low as 764A.cm-2. This is higher than for MBE grown devices because of growth thickness errors and non-optimal alignment of the gain spectrum and cavity mode. The uniformity in emission wavelength is ±1% over 80% of a 2 inch diameter wafer, offering suitability for very large uniform arrays.
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Zhao, Guowei. "Lithographic Vertical-Cavity Surface-Emitting Lasers." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5590.

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Remarkable improvements in vertical-cavity surface-emitting lasers (VCSELs) have been made by the introduction of mode- and current-confining oxide optical aperture now used commercially. However, the oxide aperture blocks heat flow inside the device, causing a larger thermal resistance, and the internal strain caused by the oxide can degrade device reliability, also the diffusion process used for the oxide formation can limit device uniformity and scalability. Oxide-free lithographic VCSELs are introduced to overcome these device limitations, with both the mode and current confined within the lithographically defined intracavity mesa, scaling and mass production of small size device could be possible. The 3 ?m diameter lithographic VCSEL shows a threshold current of 260 ?A, differential quantum efficiency of 60% and maximum output power density of 65 kW/cm2, and shows single-mode single-polarization operation with side-mode-suppression-ratio over 25 dB at output power up to 1 mW. The device also shows reliable operation during 1000 hours stress test with high injection current density of 142 kA/cm2. The lithographic VCSELs have much lower thermal resistance than oxide-confined VCSELs due to elimination of the oxide aperture. The improved thermal property allows the device to have wide operating temperature range of up to 190 &deg;C heat sink temperature, high output power density especially in small device, high rollover current density and high rollover cavity temperature. Research is still underway to reduce the operating voltage of lithographic VCSELs for high wall plug efficiency, and the voltage of 6 &"181;m device at injection current density of 10 kA/cm2 is reduces to 1.83 V with optimized mesa and DBR mirror structure. The lithographic VCSELS are promising to become the next generation VCSEL technology.<br>Ph.D.<br>Doctorate<br>Optics and Photonics<br>Optics and Photonics<br>Optics
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Man, Wai-man, and 文惠民. "Modeling of vertical cavity surface emitting lasers." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2000. http://hub.hku.hk/bib/B31223199.

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Holm, Mark. "Vertical external cavity surface emitting semiconductor lasers." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366824.

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Leonard, John T. "III-Nitride Vertical-Cavity Surface-Emitting Lasers." Thesis, University of California, Santa Barbara, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10103599.

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<p> Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet, over the past several years we have made dramatic improvements in the lasing characteristics of these highly complex devices. Specifically, we have reduced the threshold current density from &sim;100 kA/cm<sup>2</sup> to &sim;3 kA/cm<sup>2</sup>, while simultaneously increasing the output power from &sim;10 &mu;W to &sim;550 &mu;W. These developments have primarily come about by focusing on the aperture design and intracavity contact design for flip-chip dual dielectric DBR III-nitride VCSELs. We have carried out a number of studies developing an Al ion implanted aperture (IIA) and photoelectrochemically etched aperture (PECA), while simultaneously improving the quality of tin-doped indium oxide (ITO) intracavity contacts, and demonstrating the first III-nitride VCSEL with an n-GaN tunnel junction intracavity contact. Beyond these most notable research fronts, we have analyzed numerous other parameters, including epitaxial growth, flip-chip bonding, substrate removal, and more, bringing further improvement to III-nitride VCSEL performance and yield. This thesis aims to give a comprehensive discussion of the relevant underlying concepts for nonpolar VCSELs, while detailing our specific experimental advances. In Section 1, we give an overview of the applications of VCSELs generally, before describing some of the potential applications for III-nitride VCSELs. This is followed by a summary of the different material systems used to fabricate VCSELs, before going into detail on the basic design principles for developing III-nitride VCSELs. In Section 2, we outline the basic process and geometry for fabricating flip-chip nonpolar VCSELs with different aperture and intracavity contact designs. Finally, in Section 3 and 4, we delve into the experimental results achieved in the last several years, beginning with a discussion on the epitaxial growth developments. In Section 4, we discuss the most noteworthy accomplishments related to the nonpolar VCSELs structural design, such as different aperture and intracavity contact developments. Overall, this thesis is focused on the nonpolar VCSEL, however our hope is that many of the underlying insights will be of great use for the III-nitride VCSELs community as a whole. Throughout this report, we have taken great effort to highlight the future research fronts that would advance the field of III-nitride VCSELs generally, with the goal of illuminating the path forward for achieving efficient CW operating III-nitride VCSELs.</p>
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Badr, N. M. "Vertical-cavity surface-emitting lasers : polarisation and external cavity effects." Thesis, University of Bath, 1995. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.760674.

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Brown, de Colstoun François Patrice Didier. "Optical instabilities in vertical-cavity surface-emitting lasers." Diss., The University of Arizona, 1994. http://hdl.handle.net/10150/186697.

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is a new type of microcavity semiconductor laser with new and unusual characteristics. It is designed to have very high reflectivity mirrors with cavity length on the order of the wavelength of light, making possible dynamical studies in the smallest of laser cavities. Only one single longitudinal mode is supported within the gain spectrum of the active semiconductor material, thus requiring the cavity length to be an integer multiple of the emission wavelength. This short cavity length and a wide output aperture, on the order of five microns, provide for a high Fresnel number. The combination of the high Fresnel number and of the richness of nonlinear effects in GaAs makes the VCSEL an ideal candidate for the study of spatio-temporal dynamics in nonlinear optics. In this dissertation we report on the longitudinal and transverse characteristics of VCSELs under injection-locking. Unique features appear experimentally in the longitudinal nonlinear dynamics of this system including beam coupling, four-wave mixing, new frequency generation, subharmonic bifurcation, and enhanced relaxation oscillations, opening a route to chaos. Coherent Energy Transfer (CET) takes place between a strong monochromatic injection frequency and all the frequencies contained in the VCSEL's laser emission just above threshold, leading to asymmetric gain. The high Fresnel number of the VCSEL makes it an interesting candidate for the study of transverse pattern behavior under injection-locking. We have forced high-order transverse modes and observed transverse instabilities including optical vortices. We have found three ways of generating vortices in VCSELs; these are the helicoidal phase mask, the Gaussian-beam-induced vortices, and the injection-locked TEM*₀₁ mode.
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Xiang, Yu. "GaAs based Vertical-Cavity Surface-Emitting Transistor-Lasers." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-156841.

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The ever-increasing demand for broadband capacity of the global optical communication networks puts enormous requirements on the semiconductor laser used in the optical transmitter. Industrial standard bodies for optical communication project requirements of single-channel data rates as high as 100 Gbit/s around year 2020. This is a significant step with respect to today's technology which is only at the verge of introducing 25 Gbit/s emitters. The preferred light source for these applications is the vertical-cavity surface-emitting laser (VCSEL) which can offer cost- and power-efficient directly modulated operation. However, it has proven extremely difficult to push the modulation bandwidth of VCSELs beyond 30 GHz and radically new device concepts are demanded to meet the upcoming needs. One such new device paradigm consists of the transistor laser which is the fusion of a semiconductor laser and a high-speed heterojunction bipolar transistor (HBT) into a single device, with potential significant advantages in modulation bandwidth, noise properties and novel functionality by virtue of the three-terminal configuration. The present thesis deals with the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs), a device previously not realized or investigated in great detail. GaAs-based T-VCSELs are investigated both theoretically and experimentally. A three-dimensional model is set up with a commercial software package and used for performance predictions and analysis as well as design and optimization purposes. It is concluded that a T-VCSEL biased in the common-base configuration may have a bandwidth surpassing those of conventional diode-type VCSELs or a T-VCSEL itself in the common-emitter configuration. Fabricated T-VCSELs make use of an epitaxial regrowth design to homogeneously integrate an AlGaAs/GaAs HBT and an InGaAs/GaAs VCSEL. An intracavity contacting scheme involving all three terminals, undoped distributed Bragg reflectors and modulation doping are used to ensure a low-loss laser structure. The first generation of devices showed sub-mA range base threshold current in combination with a high output power close to 2 mW but did not fulfill the requirements for a fully operational transistor laser since the transistor went into saturation before the onset of lasing (IBsat&lt;IBth). From numerical simulations this premature saturation was demonstrated being due to a lateral potential variation within the device and large voltage drops along the base and collector regions. As a remedy to this problem the base region was redesigned for a reduced resistance and transistor current gain, and the saturation current could thereby be extended well beyond threshold. These devices showed excellent transistor-laser characteristics with clear gain-compression at threshold, mA-range base threshold current, mW-range output power, high-temperature operation to at least 60°C, low collector-emitter offset voltage and record-low power dissipation during lasing. Furthermore, the collector-current breakdown characteristics was investigated in some detail and it is concluded that this, in contrast to previous models, presumably not is due to an intracavity photon reabsorption process but rather to a quantum-well band-filling effect.<br><p>QC 20141203</p>
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Gardner, Kyle Scot. "Single frequency vertical external cavity surface emitting lasers." Thesis, University of Strathclyde, 2007. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=21733.

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The thesis presents the development and implementation of single frequency vertical external cavity surface emitting lasers (VECSELs). Numerous cavity designs are reported, exploiting some unique features for single frequency operation. A small VECSEL cavity configuration is reported utilising a positive curvature mirror in reverse to create a 6mm cavity where the air gap between the mirror surface and VECSEL wafer act as an etalon, which induces single frequency operation. A 7nm tuning range has been shown with maximum output of 19.4mW. Thermal modelling was undertaken to analyse how the removal of the VECSEL's substrate could increase the thermal efficiency for high power operation. Another small cavity design of length 50mm was created, producing a high power, compact single frequency VECSEL. Using a birefringent filter and solid etalon single frequency operation was achieved. A tuning range of 1Onm was achieved with output powers of 271mW. Extensive mapping of the pump profile and eventual manipulation of this resulted in the Mp2s of the laser of 1.1 being reduced to 1.02. In addition an air etalon system was constructed to eliminate walk-off losses experienced by the solid etalon. This resulted in a 20nm tuning range. Frequency doubling of an 850nm VECSEL using KNbOb3s is reported with 1.3mW of 425nm being achieved, corresponding to an efficiency of 3.2%/W. This system also incorporates a polarisation coupled pump system delivering 3W at 670nm from a 100(So(Bm fibre. The relationship between the VECSEL's gain and frequency conversion efficiency is also analysed in detail.
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Pinches, Stephen Matthew. "Vertical-cavity surface-emitting lasers with visible emission." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341808.

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Books on the topic "Vertical Cavity Surface Emitting"

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Sale, T. E. Vertical cavity surface emitting lasers. Research Studies Press, 1995.

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Li, Herbert E. Vertical-Cavity Surface-Emitting Laser Devices. Springer Berlin Heidelberg, 2003.

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Li, Herbert E., and Kenichi Iga, eds. Vertical-Cavity Surface-Emitting Laser Devices. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05263-1.

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Yu, S. F. Analysis and Design of Vertical Cavity Surface Emitting Lasers. John Wiley & Sons, Inc., 2003. http://dx.doi.org/10.1002/0471723789.

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Yu, S. F. Analysis and Design of Vertical Cavity Surface Emitting Lasers. John Wiley & Sons, Inc., 2003. http://dx.doi.org/10.1002/0471723789.

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Kreuter, Philipp. Modeling of electrically pumped vertical-external-cavity surface-emitting lasers. Hartung-Gorre Verlag, 2010.

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Bäcker, Alexandra. A TCAD analysis of long-wavelength vertical-cavity surface-emitting lasers. Hartung-Gorre, 2009.

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Michalzik, Rainer. VCSELs: Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers. Springer Berlin Heidelberg, 2013.

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Lei, Zhun. Vertical-cavity surface-emitting lasers XII: 23-24 January 2008, San Jose, California, USA. SPIE, 2008.

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name, No. Vertical-cavity surface-emitting lasers VII: 29-30 January 2003, San Jose, California, USA. SPIE, 2003.

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Book chapters on the topic "Vertical Cavity Surface Emitting"

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Czyszanowski, Tomasz, Leszek Frasunkiewicz, and Maciej Dems. "Vertical-Cavity Surface-Emitting Lasers." In Handbook of Optoelectronic Device Modeling and Simulation. CRC Press, 2017. http://dx.doi.org/10.4324/9781315152318-9.

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Unger, P. "10.1 Vertical-cavity surface-emitting lasers." In Laser Systems. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14177-5_7.

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Springholz, G., and G. Bauer. "9.8.2 Vertical-cavity surface-emitting lasers." In Growth and Structuring. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_105.

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Weik, Martin H. "vertical-cavity surface-emitting laser diode." In Computer Science and Communications Dictionary. Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_20729.

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Hofmann, Werner H. E. "Vertical-Cavity Surface-Emitting Lasers for Interconnects." In Energy Efficient Computing & Electronics. CRC Press, 2019. http://dx.doi.org/10.1201/9781315200705-7.

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Springholz, G., and G. Bauer. "9.8.3 Vertical-external-cavity surface-emitting lasers." In Growth and Structuring. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_106.

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Rakic, A. D., and M. L. Majewski. "Cavity and Mirror Design for Vertical-Cavity Surface-Emitting Lasers." In Springer Series in Photonics. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05263-1_8.

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Iga, K. "Vertical-Cavity Surface-Emitting Laser: Introduction and Review." In Springer Series in Photonics. Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-662-05263-1_1.

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Germann, Tim David. "High-Power Vertical External-Cavity Surface-Emitting Lasers." In Design and Realization of Novel GaAs Based Laser Concepts. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-34079-6_6.

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Germann, Tim David. "Electro-Optically Modulated Vertical-Cavity Surface-Emitting Lasers." In Design and Realization of Novel GaAs Based Laser Concepts. Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-34079-6_7.

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Conference papers on the topic "Vertical Cavity Surface Emitting"

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Shchukin, Vitaly A., Nikolay Ledentsov, Mikel Agustin, et al. "Thermally stable surface-emitting tilted wave laser." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2290565.

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Marciniak, Magdalena, Marcin Gebski, Lukasz Piskorski, et al. "The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2290729.

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Warren, Mial E., Matthew K. Block, Preethi Dacha, et al. "Low-divergence high-power VCSEL arrays for lidar application." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2290937.

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Murty, M. V. Ramana, Jingyi Wang, A. N. Cheng, et al. "VCSEL noise characterization for data rates beyond 25 Gb/s." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2290955.

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Serkland, Darwin K., Gregory M. Peake, Michael G. Wood, et al. "Mode selection and tuning of single-frequency short-cavity VECSELs." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2291197.

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Grzempa, Sandra, Maciej Dems, Wlodzimierz Nakwaski, and Tomasz G. Czyszanowski. "Quantum-cascade vertical-cavity surface-emitting laser integrated with monolithic high-contrast grating." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2292031.

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Semenova, Elizaveta, Hitesh Kumar Sahoo, Thor Ansbæk, Luisa Ottaviano, Ole Hansen, and Kresten Yvind. "Wavelength tunable MEMS VCSELs for OCT imaging." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2289545.

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Lindemann, Markus, Tobias Pusch, Rainer Michalzik, Nils C. Gerhardt, and Martin R. Hofmann. "Demonstrating ultrafast polarization dynamics in spin-VCSELs." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2289560.

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Komar, Paulina, Patrycja Śpiewak, Marcin Gębski, et al. "The influence of the VCSEL design on its electrical modulation properties." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2289582.

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Agustin, Mikel, Nikolay N. Ledentsov, Joerg-Reinhardt Kropp, et al. "50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range." In Vertical-Cavity Surface-Emitting Lasers XXII, edited by Kent D. Choquette and Chun Lei. SPIE, 2018. http://dx.doi.org/10.1117/12.2289823.

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Reports on the topic "Vertical Cavity Surface Emitting"

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SMITH, ARLEE V., ARTHUR J. FISCHER, and ARTHUR J. FISCHER. Vertical Cavity Surface Emitting Lasers. Office of Scientific and Technical Information (OSTI), 2002. http://dx.doi.org/10.2172/805860.

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Deppe, Dennis G. Bistable Vertical Cavity Surface Emitting Lasers. Defense Technical Information Center, 1992. http://dx.doi.org/10.21236/ada253123.

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Warren, M. E., G. R. Hadley, K. L. Lear, et al. Phase-locked arrays of vertical-cavity surface-emitting lasers. Office of Scientific and Technical Information (OSTI), 1994. http://dx.doi.org/10.2172/10163743.

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Ren, Fan, and Stephen J. Pearton. 1.55 Vertical Cavity Surface Emitting Laser With Dielectric Mirrors. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada432899.

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Towe, Elias. A Research Report on Vertical-Cavity Surface-Emitting Lasers. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada298756.

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Goossen, Keith. Development of Increased Reliability Vertical Cavity Surface Emitting Laser Arrays. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada436640.

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Richardson, Dean, and Rolf Binder. Ultrafast Polarization Switching Dynamics in Vertical-Cavity Surface-Emitting Lasers. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada341577.

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Hadley, G. R., K. L. Lear, M. E. Warren, K. D. Choquette, J. W. Scott, and S. W. Corzine. Comprehensive numerical model for cw vertical-cavity surface-emitting lasers. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/28383.

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Choquette, K. D., K. L. Lear, R. P. Jr Schneider, et al. Polarization characteristics, control, and modulation of vertical-cavity surface emitting lasers. Office of Scientific and Technical Information (OSTI), 1995. http://dx.doi.org/10.2172/34417.

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Nelson, Thomas R. Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada430942.

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You might also be interested in the extended bibliographies on the topic 'Vertical Cavity Surface Emitting' for particular source types:
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