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Dissertations / Theses on the topic 'Vertical Cavity Surface Emitting'

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Published: 4 June 2021
Last updated: 4 February 2022

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1

Sale, Terence Edward. "Vertical cavity surface emitting lasers." Thesis, University of Sheffield, 1993. http://etheses.whiterose.ac.uk/1825/.

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Vertical cavity surface emitting laser (VCSEL) structures have been grown by both metal-organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE). These incorporate 3 strained InGaAs / GaAs quantum wells placed resonantly in a two wavelength long optical cavity, formed between AlAs / GaAs quarter wave dielectric reflector stacks through which current is injected. The reflection spectra of these stacks is studied in detail; the effects on the laser threshold gain of absorption due to impurities and of errors in growth are investigated. Methods of disruption of the AlAs / GaAs heterointerfaces have been used to reduce the operating voltage. The completed designs use 200A intermediate layers containing 30 or 50% aluminium or a superlattice graded region simpler than that used in previous designs. The effectiveness acceptor dopants; Be in MBE, C and Zn in MOCVD; is studied also. Modulation doping was employed to reduce the effects of optical absorption. Devices were fabricated into mesas by SiC14 reactive ion etching or defined by proton implant isolation. MBE grown devices were resonant at wavelengths in the range 950 to 1059mn with essentially constant (at —1020nm) eihhi transition energies in the wells. A detailed study of the wavelength variation of threshold current density Jth (X)was made. A minimum of 366A.cnr2 was measured at 1018nm in mesa devices. A similar relation is found for ion-implanted devices but the minimum is increased to 535A.cm-2 by incomplete isolation. Gain calculations, including strain effects, are used to explain the Jth(X) variation. Implanted devices offer superior c.w. performance due to reduced thermal and ohmic resistances. The relative offset between the gain spectrum and cavity resonance was examined for c.w. operation. It was found that carrier thermal effects limit the output power rather than shifts in the offset. The bias voltage of MOCVD grown devices is as low as 1.7V and the threshold current is as low as 764A.cm-2. This is higher than for MBE grown devices because of growth thickness errors and non-optimal alignment of the gain spectrum and cavity mode. The uniformity in emission wavelength is ±1% over 80% of a 2 inch diameter wafer, offering suitability for very large uniform arrays.
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2

Zhao, Guowei. "Lithographic Vertical-Cavity Surface-Emitting Lasers." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5590.

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Remarkable improvements in vertical-cavity surface-emitting lasers (VCSELs) have been made by the introduction of mode- and current-confining oxide optical aperture now used commercially. However, the oxide aperture blocks heat flow inside the device, causing a larger thermal resistance, and the internal strain caused by the oxide can degrade device reliability, also the diffusion process used for the oxide formation can limit device uniformity and scalability. Oxide-free lithographic VCSELs are introduced to overcome these device limitations, with both the mode and current confined within the lithographically defined intracavity mesa, scaling and mass production of small size device could be possible. The 3 ?m diameter lithographic VCSEL shows a threshold current of 260 ?A, differential quantum efficiency of 60% and maximum output power density of 65 kW/cm2, and shows single-mode single-polarization operation with side-mode-suppression-ratio over 25 dB at output power up to 1 mW. The device also shows reliable operation during 1000 hours stress test with high injection current density of 142 kA/cm2. The lithographic VCSELs have much lower thermal resistance than oxide-confined VCSELs due to elimination of the oxide aperture. The improved thermal property allows the device to have wide operating temperature range of up to 190 &deg;C heat sink temperature, high output power density especially in small device, high rollover current density and high rollover cavity temperature. Research is still underway to reduce the operating voltage of lithographic VCSELs for high wall plug efficiency, and the voltage of 6 &"181;m device at injection current density of 10 kA/cm2 is reduces to 1.83 V with optimized mesa and DBR mirror structure. The lithographic VCSELS are promising to become the next generation VCSEL technology.<br>Ph.D.<br>Doctorate<br>Optics and Photonics<br>Optics and Photonics<br>Optics
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3

Man, Wai-man, and 文惠民. "Modeling of vertical cavity surface emitting lasers." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2000. http://hub.hku.hk/bib/B31223199.

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4

Holm, Mark. "Vertical external cavity surface emitting semiconductor lasers." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366824.

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5

Leonard, John T. "III-Nitride Vertical-Cavity Surface-Emitting Lasers." Thesis, University of California, Santa Barbara, 2016. http://pqdtopen.proquest.com/#viewpdf?dispub=10103599.

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<p> Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet, over the past several years we have made dramatic improvements in the lasing characteristics of these highly complex devices. Specifically, we have reduced the threshold current density from &sim;100 kA/cm<sup>2</sup> to &sim;3 kA/cm<sup>2</sup>, while simultaneously increasing the output power from &sim;10 &mu;W to &sim;550 &mu;W. These developments have primarily come about by focusing on the aperture design and intracavity contact design for flip-chip dual dielectric DBR III-nitride VCSELs. We have carried out a number of studies developing an Al ion implanted aperture (IIA) and photoelectrochemically etched aperture (PECA), while simultaneously improving the quality of tin-doped indium oxide (ITO) intracavity contacts, and demonstrating the first III-nitride VCSEL with an n-GaN tunnel junction intracavity contact. Beyond these most notable research fronts, we have analyzed numerous other parameters, including epitaxial growth, flip-chip bonding, substrate removal, and more, bringing further improvement to III-nitride VCSEL performance and yield. This thesis aims to give a comprehensive discussion of the relevant underlying concepts for nonpolar VCSELs, while detailing our specific experimental advances. In Section 1, we give an overview of the applications of VCSELs generally, before describing some of the potential applications for III-nitride VCSELs. This is followed by a summary of the different material systems used to fabricate VCSELs, before going into detail on the basic design principles for developing III-nitride VCSELs. In Section 2, we outline the basic process and geometry for fabricating flip-chip nonpolar VCSELs with different aperture and intracavity contact designs. Finally, in Section 3 and 4, we delve into the experimental results achieved in the last several years, beginning with a discussion on the epitaxial growth developments. In Section 4, we discuss the most noteworthy accomplishments related to the nonpolar VCSELs structural design, such as different aperture and intracavity contact developments. Overall, this thesis is focused on the nonpolar VCSEL, however our hope is that many of the underlying insights will be of great use for the III-nitride VCSELs community as a whole. Throughout this report, we have taken great effort to highlight the future research fronts that would advance the field of III-nitride VCSELs generally, with the goal of illuminating the path forward for achieving efficient CW operating III-nitride VCSELs.</p>
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6

Badr, N. M. "Vertical-cavity surface-emitting lasers : polarisation and external cavity effects." Thesis, University of Bath, 1995. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.760674.

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7

Brown, de Colstoun François Patrice Didier. "Optical instabilities in vertical-cavity surface-emitting lasers." Diss., The University of Arizona, 1994. http://hdl.handle.net/10150/186697.

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is a new type of microcavity semiconductor laser with new and unusual characteristics. It is designed to have very high reflectivity mirrors with cavity length on the order of the wavelength of light, making possible dynamical studies in the smallest of laser cavities. Only one single longitudinal mode is supported within the gain spectrum of the active semiconductor material, thus requiring the cavity length to be an integer multiple of the emission wavelength. This short cavity length and a wide output aperture, on the order of five microns, provide for a high Fresnel number. The combination of the high Fresnel number and of the richness of nonlinear effects in GaAs makes the VCSEL an ideal candidate for the study of spatio-temporal dynamics in nonlinear optics. In this dissertation we report on the longitudinal and transverse characteristics of VCSELs under injection-locking. Unique features appear experimentally in the longitudinal nonlinear dynamics of this system including beam coupling, four-wave mixing, new frequency generation, subharmonic bifurcation, and enhanced relaxation oscillations, opening a route to chaos. Coherent Energy Transfer (CET) takes place between a strong monochromatic injection frequency and all the frequencies contained in the VCSEL's laser emission just above threshold, leading to asymmetric gain. The high Fresnel number of the VCSEL makes it an interesting candidate for the study of transverse pattern behavior under injection-locking. We have forced high-order transverse modes and observed transverse instabilities including optical vortices. We have found three ways of generating vortices in VCSELs; these are the helicoidal phase mask, the Gaussian-beam-induced vortices, and the injection-locked TEM*₀₁ mode.
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8

Xiang, Yu. "GaAs based Vertical-Cavity Surface-Emitting Transistor-Lasers." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-156841.

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The ever-increasing demand for broadband capacity of the global optical communication networks puts enormous requirements on the semiconductor laser used in the optical transmitter. Industrial standard bodies for optical communication project requirements of single-channel data rates as high as 100 Gbit/s around year 2020. This is a significant step with respect to today's technology which is only at the verge of introducing 25 Gbit/s emitters. The preferred light source for these applications is the vertical-cavity surface-emitting laser (VCSEL) which can offer cost- and power-efficient directly modulated operation. However, it has proven extremely difficult to push the modulation bandwidth of VCSELs beyond 30 GHz and radically new device concepts are demanded to meet the upcoming needs. One such new device paradigm consists of the transistor laser which is the fusion of a semiconductor laser and a high-speed heterojunction bipolar transistor (HBT) into a single device, with potential significant advantages in modulation bandwidth, noise properties and novel functionality by virtue of the three-terminal configuration. The present thesis deals with the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs), a device previously not realized or investigated in great detail. GaAs-based T-VCSELs are investigated both theoretically and experimentally. A three-dimensional model is set up with a commercial software package and used for performance predictions and analysis as well as design and optimization purposes. It is concluded that a T-VCSEL biased in the common-base configuration may have a bandwidth surpassing those of conventional diode-type VCSELs or a T-VCSEL itself in the common-emitter configuration. Fabricated T-VCSELs make use of an epitaxial regrowth design to homogeneously integrate an AlGaAs/GaAs HBT and an InGaAs/GaAs VCSEL. An intracavity contacting scheme involving all three terminals, undoped distributed Bragg reflectors and modulation doping are used to ensure a low-loss laser structure. The first generation of devices showed sub-mA range base threshold current in combination with a high output power close to 2 mW but did not fulfill the requirements for a fully operational transistor laser since the transistor went into saturation before the onset of lasing (IBsat&lt;IBth). From numerical simulations this premature saturation was demonstrated being due to a lateral potential variation within the device and large voltage drops along the base and collector regions. As a remedy to this problem the base region was redesigned for a reduced resistance and transistor current gain, and the saturation current could thereby be extended well beyond threshold. These devices showed excellent transistor-laser characteristics with clear gain-compression at threshold, mA-range base threshold current, mW-range output power, high-temperature operation to at least 60°C, low collector-emitter offset voltage and record-low power dissipation during lasing. Furthermore, the collector-current breakdown characteristics was investigated in some detail and it is concluded that this, in contrast to previous models, presumably not is due to an intracavity photon reabsorption process but rather to a quantum-well band-filling effect.<br><p>QC 20141203</p>
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9

Gardner, Kyle Scot. "Single frequency vertical external cavity surface emitting lasers." Thesis, University of Strathclyde, 2007. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=21733.

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The thesis presents the development and implementation of single frequency vertical external cavity surface emitting lasers (VECSELs). Numerous cavity designs are reported, exploiting some unique features for single frequency operation. A small VECSEL cavity configuration is reported utilising a positive curvature mirror in reverse to create a 6mm cavity where the air gap between the mirror surface and VECSEL wafer act as an etalon, which induces single frequency operation. A 7nm tuning range has been shown with maximum output of 19.4mW. Thermal modelling was undertaken to analyse how the removal of the VECSEL's substrate could increase the thermal efficiency for high power operation. Another small cavity design of length 50mm was created, producing a high power, compact single frequency VECSEL. Using a birefringent filter and solid etalon single frequency operation was achieved. A tuning range of 1Onm was achieved with output powers of 271mW. Extensive mapping of the pump profile and eventual manipulation of this resulted in the Mp2s of the laser of 1.1 being reduced to 1.02. In addition an air etalon system was constructed to eliminate walk-off losses experienced by the solid etalon. This resulted in a 20nm tuning range. Frequency doubling of an 850nm VECSEL using KNbOb3s is reported with 1.3mW of 425nm being achieved, corresponding to an efficiency of 3.2%/W. This system also incorporates a polarisation coupled pump system delivering 3W at 670nm from a 100(So(Bm fibre. The relationship between the VECSEL's gain and frequency conversion efficiency is also analysed in detail.
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10

Pinches, Stephen Matthew. "Vertical-cavity surface-emitting lasers with visible emission." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341808.

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11

Chen, Ye Huang. "AlGaInP/AlGaAs visible vertical cavity surface emitting lasers." Thesis, University of Sheffield, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389670.

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12

Zhang, Wei. "Optically pumped vertical-external-cavity surface-emitting lasers." Thesis, University of Strathclyde, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.436838.

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13

Foreman, Hannah D. "Mode-locked vertical-external-cavity surface emitting lasers." Thesis, University of Southampton, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.438526.

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14

Tastavridis, Konstantinos. "Dynamics of vertical cavity surface emitting laser arrays." Thesis, University of Bristol, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268777.

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15

Dragaš, Milan. "Advanced concepts in vertical cavity surface emitting lasers." Thesis, University of Bristol, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.404105.

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16

Wiemer, Michael W. "Monolithically integrated long vertical cavity surface emitting lasers /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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17

Ramsay, Andrew James. "Coherent control of vertical-cavity surface-emitting lasers." Thesis, University of Cambridge, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.619959.

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18

Sceats, Russell. "Long wavelength surface emitters and vertical cavity surface emitting lasers." Thesis, University of Essex, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.250075.

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19

Faraji, Behnam. "Modeling of the transistor vertical cavity surface emitting laser." Thesis, University of British Columbia, 2011. http://hdl.handle.net/2429/35084.

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The direct modulation of semiconductor lasers has many applications in data transmission. However, due to the frequency response it has been challenging to use directly modulated lasers for high speed digital transmission at bit-rates above 10 Gbps. With this in mind, designing a laser with a large modulation bandwidth to be used in high data-rate optical links is very important. Transistor lasers (TLs) are a potential candidate for this purpose. Based on these motivations, the main focus of this PhD research is on understanding the physics of the TL and predicting its performance. A detailed model that correctly incorporates the transistor effects on laser dynamics did not exist. The previous models do not differentiate between the bulk carriers and the quantum well (QW) carriers in the rate equations, do not include the effects of the capture and escape lifetimes in the QW, and significantly overestimate the bandwidth. To account for these phenomena, a model has been developed to study the dynamics of the TL. The model is based on the continuity equation in the separate confinement hetero-structure region of the conventional laser and the base region of the TL. It uses the quantum mechanical escape and capture of carriers in the quantum well region and the laser rate equations to model the laser operation. The model has been used to gain insight into the conventional separate confinement hetero-structure lasers, and the results of the model have been compared with the experimental results obtained for 850 nm vertical cavity surface emitting lasers(VCSELs). Analytical expressions have been derived for DC and AC parameters of the TL operating in common-base and common-emitter configurations. It has been shown that the TL operating in the common-emitter configuration has a similar modulation bandwidth as a conventional laser (~ 20 GHz). The common-base configuration, on the other hand, has a very large small-signal modulation bandwidth (> 40 GHz) due to bandwidth equalization in the TL. The large-signal performance of the TL has been studied. Finally, it has been shown that the common-emitter configuration with feedback has improved bandwidth by a factor of 1.5 in high bias currents.
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20

Smith, Antony. "Diode pumped visible Vertical External Cavity Surface Emitting Lasers." Thesis, University of Strathclyde, 2010. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=15576.

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21

Al, Seyab Rihab Khalid Shakir. "Dynamic behaviour of spin vertical cavity surface emitting lasers." Thesis, University of Essex, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.589471.

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This research investigates the nonlinear dynamics and polarization properties of solitary and optically-injected spin-Vertical-Cavity Surface-Emitting Lasers (VCSELs). We report a first comprehensive theoretical analysis of optically-pumped spin-polarized VCSELs which combines the spin flip model (SFM) with both the Largest Lyapunov Exponent (LLE) and bifurcation analysis techniques to determine regions of stability and instability. The dependence of these regions on a wide range of fundamental device parameters is investigated and results are presented in a new form of contour maps. One aspect that this reveals is the importance of considering both the birefringence rate and the linewidth enhancement factor when engineering a device for high frequency applications. Also using the experimental characteristics of an optically pumped 1300 nm dilute nitride VCSEL to derive appropriate SFM parameters, we show very good agreement between simulation and experiment for the CW behaviour and stability. The SFM has been extended and generalized to allow for optical injection of arbitrary polarization. Measurements on conventional electrically-pumped 1550-nm VCSELs with different frequency spacing between the resonances of the orthogonal polarizations of the fundamental transverse mode have been used to estimate the model's parameters. Excellent agreement is found between experiment and theory for the stability and polarization properties of the optically-injected VCSELs. Finally, the results of theoretical investigations for optically-pumped spin- VCSELs subject to polarized optical injection have been presented. The new extended SFM is used in this study to show the effect of the optical injection on the steady-state characteristics, nonlinear dynamics and polarization of spin-VCSELs. New maps of nonlinear dynamics and output polarization have been generated using different values of device parameters and pumping power and ellipticity. Furthermore, controlling the circular polarization degree of a spin- VCSEL via the optical pumping or the external optical injection has been investigated and results from the two methods compared.
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22

Smith, Scott A. "High power infrared vertical external cavity surface emitting lasers." Thesis, University of Strathclyde, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501809.

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The Vertical External Cavity Surface Emitting Laser (VECSEL) is now firmly established as an important category of semiconductor laser with many advantageous properties including high output power, excellent beam quality and wavelength flexibility. Thermal management of the optical pumped arrangement is of critical importance to ensure optimum operation, and crystalline heatspreader platelets have been successfully used in this role.
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23

Chong, Chi Hung. "Modal gain analysis of vertical cavity surface emitting lasers." Thesis, University of Bath, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358833.

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This thesis presents an investigation of the modal gain characteristics of Vertical Cavity Surface Emitting Lasers (VCSELs). This is motivated by the experimental observations which tend to indicate fundamental mode operation at just above lasing threshold and multi-transverse mode operation at higher injection current levels. The complete mode spectrum of the cylindrical cavity is first analysed to illustrate that the original expectations that single (wavelength) mode operation solely due to the large wavelength separation created by short device lengths may not be realisable. The modal gains of different modes are calculated to demonstrate that mainly the difference between the modal gains, and not the separation between the resonances, provides a more satisfactory explanation of the fundamental mode operation at just above lasing threshold. At higher injection current levels, the increase in the modal gains of the higher order transverse modes (due to spatial hole burning) explains the excitation of higher order transverse lasing modes. The model relies on calculating the modes of a cylindrical dielectric resonator and the the corresponding modal gains are obtained from a perturbation analysis which takes into account the gain profile due to the injected inversion population distribution. A self consistent evaluation of the inversion population distribution (which provides the required local gain profile) is derived from the corresponding diffusion equation for the injected carriers in the active layer of the device. The development for obtaining the above lasing threshold inversion population distribution (which includes radial and azimuthal variation) has been done hierarchically such that the numerical procedures developed in the simpler stages of the model directly apply to solve a part of the next level of sophistication. This hierarchy has helped to provide a very efficient and compact numerical procedure and may be seen as an important aspect of the work done in the thesis. Further refinements include the evaluation of the injection current profile dependence on injection contact geometry and current spreading.
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24

Dowd, Philip. "Vertical cavity surface emitting lasers : modes, control and applications." Thesis, University of Bath, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362225.

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25

Khan, Abid. "Vertical cavity surface emitting lasers : design, characterisation and integration." Thesis, University College London (University of London), 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285702.

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26

McGinily, Stephen J. "Optically pumped semiconductor vertical external cavity surface emitting lasers." Thesis, University of Strathclyde, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425957.

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27

Hoogland, Sjoerd. "Optically pumped vertical external cavity surface emitting semiconductor lasers." Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.289504.

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28

Lee, Harry 1976. "Direct modulation of multimode vertical cavity surface emitting lasers." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/86588.

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29

Chang, Keng Yeam. "Oxide confined GaAs/AlGaAs vertical cavity surface emitting lasers." Thesis, University of Sheffield, 1999. http://etheses.whiterose.ac.uk/10221/.

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This thesis presents the design, fabrication, characterisation and theoretical modelling of oxide confined GaAs/AlGaAs VCSELs operating around 850nm wavelength. Three VCSEL structures utilising different oxide aperture thickness were designed. The oxide apertures contained in these VCSELs can be easily formed through the selective wet oxidation process. Detailed experimental investigations were performed on these devices with emphasis placed on the dependence of the resonant wavelength characteristics, the threshold and modal properties on the aperture size and oxide thickness. A feasibility study of polarisation control through using nonsymmertical apertures was also carried out. These experimental activities were supplemented by theoretical modelling which included calculation of resonant wavelengths and eigenmode sizes using a scalar variational method that assumed Hermite-Gaussian transverse field variations. In addition, the light-current characteristics of the first two eigenmodes were also simulated by solving the photon and carrier rate equations, after their modal reflectance and transmittance had been calculated. The theoretical predictions were then compared with the experimental findings and ways of improving the model have also been suggested. The oxide apertures in these VCSELs provides both current constriction and optical confinement. The resultant index guiding strength is dependent on the thickness as well as on the longitudinal position of the oxide. Devices with stronger guiding have smaller mode sizes which results in lower modal reflectance, larger blue shifts in resonant wavelengths from that of plane wave values, and larger wavelength separations between the fundamental mode and the higher order modes. Devices with smaller aperture sizes also have larger spectral separations and blue shift in resonant wavelengths. When the symmetry in aperture shape is broken, the wavelength degeneracy between the TEM, o and TEM0, mode is also broken. Among the three VCSEL structures, the one with the strongest guiding provides single mode operation at larger aperture size and is less affected by thermal lensing effects. However, lower threshold currents and higher efficiencies can be obtained from devices with weakest guiding. Despite being more susceptible to thermal lensing effects, single mode power up to 1.72mW and threshold current as low as 350μA can be obtained from devices with weakest guiding design.
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30

Hoehler, Jacob Daniel. "High Peak Power Cavity Dumped Two Micron Vertical External Cavity Surface Emitting Lasers." University of Dayton / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1591737351537186.

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31

Wu, Xiaoyue. "Simulation Study of Epitaxially Regrown Vertical-Cavity Surface-Emitting Lasers." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52896.

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The vertical-cavity surface-emitting laser or VCSEL is a special type of diode laser, which has established itself in optoelectronic applications asa low-cost, high-quality miniaturized light source. The development of VCSELs can be largely promoted with support from computer simulations. In this study, we have used such simulations, on one hand to understand and improve the VCSEL performance, and on the other hand to prepare for analyzing new device concepts such as transistor-VCSELs. This thesis starts with a background introduction to the principle idea of VCSELs and then states the significance of this simulation work.Then it briefly introduces the previously used simulation workbench Sentaurus and explains the mathematical approach and the computation methods of the finally chosen simulator PICS3D. The case study of a fabricated and characterized epitaxially regrown VCSEL is the major component of this work. First the device configuration is demonstrated with detailed discussion on several design features. Second the physical models of electrical, optical and thermal phenomena along with their key parameters are presented and so are the advanced models for the active region. The main results of simulation, including steady-state characteristics and small-signal modulation, show good agreement with the experimental results and reveal some imperfections of the device design and processing, such as the overestimated stability of the regrown junction and the variation of cavity length caused by over-etch. This work is also treated as an evaluation of the simulator PICS3D, and two problems are identified: one is the troublesome way to construct a 3D device by coupling several 2D layer structures together, requiring the mesh for each layer structure to be compatible; the other would be the tricky boundary setting for the adopted method, Effective Index Method (EIM), for the transverse field calculation when only a weak index guiding effect exits in the cavity. Finally, we summarize this work and suggest some tasks for further simulations.
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32

Yu, Xingang, Yu Xiang, Jesper Berggren, et al. "Room-temperature operation of transistor vertical-cavity surface-emitting laser." KTH, Integrerade komponenter och kretsar, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122993.

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The first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL) is demonstrated. Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50 degrees C.<br><p>QC 20130605</p>
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33

Kreuter, Philipp. "Modeling of electrically pumped vertical-external-cavity surface-emitting lasers." Konstanz Hartung-Gorre, 2009. http://d-nb.info/1002628989/04.

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34

Morton, Lynne G. "Visible and ultraviolet vertical external cavity surface emitting semiconductor lasers." Thesis, University of Strathclyde, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.487870.

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Vertical External Cavity Surface Emitting Lasers (VECSELs) are an amalgamation of solid state laser and semiconductor laser technologies. They combine the high power and excellent beam quality associated with solid state laser design with the compactness and wavelength flexibility of semiconductor lasers. This thesis will report on the first red VECSEL which was used to demonstrate a novel VECSEL array and the first UV VECSEL using an AlGahiP gain region.
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35

Giet, Stephanie. "Grating-controlled infra-red vertical external cavity surface emitting lasers." Thesis, University of Strathclyde, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.501821.

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Semiconductor Disk Lasers (SDLs) are compact lasers suitable for watt to multi-watt direct generation in the 670-2350nm waveband and frequency-doubled operation in the ultraviolet and visible regions. This is, however, critically dependent on the thermal management strategy used as, in this type of laser, the pump is absorbed over micrometer lengths and the gain and loss are temperature sensitive. In this thesis, we compare the two heat dissipation techniques that have been successfully deployed to-date: the "thin device" approach where the semiconductor active mirror is bonded onto a heatsink and its substrate subsequently removed, and the "heatspreader" technique where a high thermal conductivity plalelet is directly bonded onto the active part of the unprocessed epilayer.
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36

Wong, Wing-nin, and 黃永年. "Instability and thermal effect in vertical cavity surface emitting laser." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2002. http://hub.hku.hk/bib/B31226887.

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Kim, Taek. "Developments in gallium nitride vertical cavity surface emitting laser technology." Thesis, University of Strathclyde, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366793.

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38

Vysniauskas, Kestutis. "Compact ultrashort pulse diode pumped vertical cavity surface emitting laser." Thesis, University of Southampton, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.274531.

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39

Sumaila, Yahaya Ado. "Studies of mode control in vertical cavity surface emitting lasers." Thesis, University of Bristol, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.265308.

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Wong, Wing-nin. "Instability and thermal effect in vertical cavity surface emitting laser /." Hong Kong : University of Hong Kong, 2002. http://sunzi.lib.hku.hk/hkuto/record.jsp?B25058149.

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41

Qader, Abdulqader Abdullah. "Polarisation properties of externally driven vertical cavity surface emitting lasers." Thesis, Bangor University, 2013. https://research.bangor.ac.uk/portal/en/theses/polarisation-properties-of-externally-driven-vertical-cavity-surface-emitting-lasers(6d983af9-3c67-438a-b2eb-fe45009a7ba5).html.

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42

Zou, Zhengzhong. "GaAs-based quantum dot vertical-cavity surface-emitting lasers and microactivity light emitting diodes /." Full text (PDF) from UMI/Dissertation Abstracts International, 2002. http://wwwlib.umi.com/cr/utexas/fullcit?p3089497.

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43

Sundgren, Petrus. "Development of 1.3-μm GaAs-based vertical-cavity surface-emitting lasers". Doctoral thesis, KTH, Mikroelektronik och Informationsteknik, IMIT, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-263.

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Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are desirable as low-cost sources for optical metropolitan-area and access networks. In the development of 1.3-µm VCSELs, most attention today is given to monolithic GaAs-based solutions, although no established active material exists in this wavelength region. This thesis investigates the possibility of reaching the 1.3-µm telecom wavelength window using GaInNAs quantum wells (QWs) or 1.2-µm InGaAs QWs in conjunction with negative gain-cavity detuning in VCSELs. The work includes metal-organic vapor-phase epitaxy and characterization of InGaAs and GaInNAs QWs, realization of 1.3-µm InGaAs VCSELs as well as elements of optimization and analysis of such lasers. The evaluation of GaInNAs and InGaAs QWs has been performed using a number of characterization methods such as photoluminescence (PL), high-resolution x-ray diffraction, secondary-ion mass spectroscopy, and atomic-force microscopy as well as fabrication and evaluation of broad-area lasers (BALs). Both performance and growth reproducibility of GaInNAs QWs are considered and could be improved by using high V/III ratios. Nontrivial relations between PL and laser performance are pointed out and the technologically important but problematic combination of AlGaAs and GaInNAs in the same epitaxial structure is studied. Parallel to the work on GaInNAs, the possibility of extending the wavelength of InGaAs QWs towards 1.3 µm has been investigated. Generally better luminescence efficiency and laser performance are obtained for InGaAs than for GaInNAs QWs, but the gain-peak wavelength for InGaAs QWs is presently limited to about 1.24 µm due to strain-induced degradation. In this work the InGaAs QW growth is optimized for long wavelength and high luminescence. It is demonstrated that multiple QW structures can be grown with strain similar to that of single QWs, which is interesting for VCSEL applications. Record BALs with two to five InGaAs/GaAs QWs have low threshold current densities,  70 A/cm2 per QW at 1.24 µm. The main advantage of InGaAs QWs compared to GaInNAs QWs is that they represent a better-known material system with less complex and more stable growth. However, InGaAs QWs &gt; 1.2 µm are on the verge of strain relaxation, and the possible consequences for laser production and reliability have to be considered. Using 1.2-µm InGaAs QWs, high-performance 1.3-µm VCSELs were achieved by negative gain-cavity detuning. Dynamic performance and surface reliefs to improve the single-mode operation have been investigated. The VCSELs have excellent high-temperature performance due to a smaller spectral distance between the gain-peak and the laser mode at elevated temperature. More specifically, a 1.27-µm single-mode device showed maximum output powers of 1.1 and 0.5 mW at 20 and 140ºC, which is state-of-the-art for GaAs-based long-wavelength VCSELs. In all, two methods for 1.3-µm GaAs-based VCSELs, GaInNAs and InGaAs QWs, have been investigated. GaInNAs is a difficult material but is still promising and several companies have predicted a near-future market introduction. However, the growth of GaInNAs is both complex and sensitive to growth fluctuations. On the other hand, gain-cavity detuned InGaAs-QW VCSELs show state-of-the-art performance at 1260-1290 nm with straightforward growth and processing. The devices exhibit good static and dynamic performance, and preliminary reliability tests indicate that there is no intrinsic problem. Both approaches are promising for application in real-world optical networks and deserve further attention.<br>QC 20101001
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44

Unold, Heiko [Verfasser]. "Mode control in vertical cavity surface emitting laser diodes / Heiko Unold." Ulm : Universität Ulm. Fakultät für Ingenieurwissenschaften, 2004. http://d-nb.info/1015438768/34.

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45

Bäcker, Alexandra. "A TCAD analysis of long-wavelength vertical-cavity surface-emitting lasers." Konstanz Hartung-Gorre, 2009. http://d-nb.info/995591296/04.

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46

Grantham, Jeffrey Wayne. "Optical instabilities in sodium vapor and vertical cavity surface emitting lasers." Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185609.

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This dissertation investigates three different optical instabilities: cw conical emission, bifurcations of optical transverse solitary waves, and asymmetric gain modification in a vertical cavity surface emitting laser (VCSEL). The first two instabilities occur in sodium vapor while the third occurs in a new type of semiconductor laser. For the conical emission instability, the first comparison and agreement between theory and experiment is given. The conical emission process is modeled as a series of nonlinear effects including self-trapping of the pump beam, Doppler-broadened Raman-gain amplification of Doppler-broadened resonance fluorescence, propagational four-wave mixing, and diffraction and pump-induced refraction of the new frequencies. Each step of the emission process is thoroughly examined and explained. Detailed comparisons are made between experimental observables and numerical calculations including near-field and far-field spatial profiles, frequency spectra, and cone angles. All comparisons show good agreement. In a different but related experiment, bifurcations of optical transverse solitary waves are studied for one-way propagation through a sodium vapor cell. Two types of phase encoding seed transverse bifurcations which result in transverse cell-exit profiles with the beauty rivaling that of a kaleidoscope. The cell-exit profiles are stationary in time, reproduce completely when the power or frequency is scanned, and agree well with one-way computations. Evidence is also presented for the first observation of a double-peaked Raman gain. In the third experiment, a temporal instability is examined in a GaAs VCSEL. Strong evidence is presented for an asymmetric gain modification induced when a strong optical signal is injected into the Fabry-Perot transmission peak of the VCSEL while it is lasing. This gain modification results in increased absorption on the high frequency side of the injected signal and increased gain on the low frequency side as manifested by the formation of an optical sideband. The frequency of the sideband depends on the intensity of the injected signal with frequencies (> 50 GHz) well beyond the predicted relaxation oscillation frequency being observed. Very efficient nondegenerate four-wave mixing is also observed.
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47

Schlosser, Peter Jürgen. "Vertical external cavity surface emitting lasers utilising quantum dot active regions." Thesis, University of Strathclyde, 2011. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=16773.

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48

Blansett, Ethan Lloyd. "Picosecond polarization dynamics and noise of vertical-cavity surface-emitting lasers /." view abstract or download file of text, 2002. http://wwwlib.umi.com/cr/uoregon/fullcit?p3055668.

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Thesis (Ph. D.)--University of Oregon, 2002.<br>Typescript. Includes vita and abstract. Includes bibliographical references (leaves 138-142). Also available for download via the World Wide Web; free to University of Oregon users.
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49

Aldaz, Rafael I. "Towards monolithic integration of mode-locked vertical cavity surface emitting laser /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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50

Ostermann, Johannes Michael. "Diffractive optics for polarization control of vertical-cavity surface-emitting lasers." [S.l. : s.n.], 2007. http://nbn-resolving.de/urn:nbn:de:bsz:289-vts-60098.

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