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Relevant bibliographies by topics / Visible photodetector

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Journal articles

Academic literature on the topic 'Visible photodetector'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Visible photodetector"

1

Syu, Jhih-Chun, Ming-Hung Hsu, Sheng-Po Chang, Shoou-Jinn Chang, and Lucent Lu. "Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector." Coatings 8, no. 9 (2018): 293. http://dx.doi.org/10.3390/coatings8090293.

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A gallium-zinc-tin-oxide (GaZTO) solar-blind photodetector was fabricated via radio frequency sputtering. The transmittance of the GaZTO thin film was >80% in the visible light region, and its energy bandgap ranged from 4.11 to 4.23 eV. Manipulating the oxygen flows changed the ratio of oxygen vacancies, which was confirmed by X-ray photoelectron spectroscopy. The ratio of oxygen vacancies in the GaZTO thin films impacted the performance of the photodetectors. The photocurrent, responsivity, and ultraviolet–visible rejection ratio of the GaZTO solar-blind photodetector were 1.23 × 10−6 A, 9

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2

Liu, Yujin, Guobiao Cen, Gai Wang, et al. "High performance MoO3−x/Si heterojunction photodetectors with nanoporous pyramid Si arrays for visible light communication application." Journal of Materials Chemistry C 7, no. 4 (2019): 917–25. http://dx.doi.org/10.1039/c8tc05850d.

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Self-powered, fast-response heterojunction photodetectors based on nanoporous pyramid Si arrays are successfully developed. The photodetector is further integrated into a visible light communication system as an optical signal receiver.

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3

Ren, Bing, Meiyong Liao, Masatomo Sumiya, et al. "Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates." Applied Sciences 9, no. 14 (2019): 2895. http://dx.doi.org/10.3390/app9142895.

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The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage

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4

Thompson, Jesse E., Darian Smalley, and Masahiro Ishigami. "Solar-Blind Ultraviolet Photodetectors Based on Vertical Graphene-Hexagonal Boron Nitride Heterostructures." MRS Advances 5, no. 37-38 (2020): 1993–2002. http://dx.doi.org/10.1557/adv.2020.331.

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AbstractPhotodetectors operating in the ultraviolet (UV) play a pivotal role in applications such as ozone monitoring and biosensing. One key factor to successfully implementing such photodetectors is that they must be solar-blind to avoid detecting ambient visible and infrared light. Unfortunately, UV photodetectors based on silicon and other typical semiconductors are not natively solar-blind, since their band gap energies are in the visible range. Hexagonal boron nitride (h-BN) is an example of a wide band gap semiconductor which shows promise for use as the absorbing medium in a UV photode

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5

Masuzawa, T., I. Saito, M. Onishi, et al. "High sensitivity photodetector made of amorphous selenium and diamond cold cathode." Canadian Journal of Physics 92, no. 7/8 (2014): 667–70. http://dx.doi.org/10.1139/cjp-2013-0648.

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In the present study, high-sensitivity photodetection has been demonstrated using an amorphous selenium (a-Se) based photodetector driven by nitrogen-doped diamond cold cathode. The emission current – applied voltage characteristics are compared between different lighting conditions, and their sensitivities are evaluated in terms of nominal quantum efficiency. The estimated nominal quantum efficiency was 10–40 for visible and up to 1000 for ultraviolet, proving a successful photodetection utilizing carrier multiplication in a-Se.

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6

Tsay, Chien-Yie, Shih-Ting Chen, and Man-Ting Fan. "Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors." Coatings 9, no. 4 (2019): 277. http://dx.doi.org/10.3390/coatings9040277.

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The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of t

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7

Tsai, Tsung-Ying, Shoou-Jinn Chang, Wen-Ying Weng, et al. "A Visible-Blind TiO2Nanowire Photodetector." Journal of The Electrochemical Society 159, no. 4 (2012): J132—J135. http://dx.doi.org/10.1149/2.008205jes.

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8

Wang, Cheng-Jyun, Hsin-Chiang You, Jen-Hung Ou, Yun-Yi Chu, and Fu-Hsiang Ko. "Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors." Nanomaterials 10, no. 3 (2020): 458. http://dx.doi.org/10.3390/nano10030458.

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Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching ION/IOFF ratio of approximately 105. Therefore, the stable and excell

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9

Jia, Feixiang, Fan Huang, Sheng Ouyang, et al. "Design of photoactive hybrid based intelligent photodetectors for identifying the detected wavelength." Journal of Materials Chemistry C 4, no. 46 (2016): 10797–803. http://dx.doi.org/10.1039/c6tc03449g.

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The similar response time for UV and visible light of the graphene/CdS photodetector is intentionally tuned by inserting ZnS films to produce the graphene/ZnS/CdS photodetector, which can be used as a characteristic parameter to distinguish the detected UV and visible light.

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10

Mallows, John, Miquel Planells, Vishal Thakare, Reshma Bhosale, Satishchandra Ogale, and Neil Robertson. "p-Type NiO Hybrid Visible Photodetector." ACS Applied Materials & Interfaces 7, no. 50 (2015): 27597–601. http://dx.doi.org/10.1021/acsami.5b09291.

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