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Journal articles on the topic 'Visible photodetector'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Syu, Jhih-Chun, Ming-Hung Hsu, Sheng-Po Chang, Shoou-Jinn Chang, and Lucent Lu. "Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector." Coatings 8, no. 9 (2018): 293. http://dx.doi.org/10.3390/coatings8090293.

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A gallium-zinc-tin-oxide (GaZTO) solar-blind photodetector was fabricated via radio frequency sputtering. The transmittance of the GaZTO thin film was >80% in the visible light region, and its energy bandgap ranged from 4.11 to 4.23 eV. Manipulating the oxygen flows changed the ratio of oxygen vacancies, which was confirmed by X-ray photoelectron spectroscopy. The ratio of oxygen vacancies in the GaZTO thin films impacted the performance of the photodetectors. The photocurrent, responsivity, and ultraviolet–visible rejection ratio of the GaZTO solar-blind photodetector were 1.23 × 10−6 A, 9

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2

Liu, Yujin, Guobiao Cen, Gai Wang, et al. "High performance MoO3−x/Si heterojunction photodetectors with nanoporous pyramid Si arrays for visible light communication application." Journal of Materials Chemistry C 7, no. 4 (2019): 917–25. http://dx.doi.org/10.1039/c8tc05850d.

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Self-powered, fast-response heterojunction photodetectors based on nanoporous pyramid Si arrays are successfully developed. The photodetector is further integrated into a visible light communication system as an optical signal receiver.

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3

Ren, Bing, Meiyong Liao, Masatomo Sumiya, et al. "Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates." Applied Sciences 9, no. 14 (2019): 2895. http://dx.doi.org/10.3390/app9142895.

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The authors report on a vertical-type visible-blind ultraviolet (UV) Schottky-type photodetector fabricated on a homoepitaxial GaN layer grown on free-standing GaN substrates with a semi-transparent Ni Schottky contact. Owing to the high-quality GaN drift layer with low-density threading dislocation and high electron mobility, the UV photodetector shows a high specific detectivity of more than 1012 Jones and a UV/visible discrimination ratio of ~1530 at −5 V. The photodetector also shows the excellent self-powered photo-response and a high signal-to-noise ratio of more than 104 at zero voltage

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4

Thompson, Jesse E., Darian Smalley, and Masahiro Ishigami. "Solar-Blind Ultraviolet Photodetectors Based on Vertical Graphene-Hexagonal Boron Nitride Heterostructures." MRS Advances 5, no. 37-38 (2020): 1993–2002. http://dx.doi.org/10.1557/adv.2020.331.

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AbstractPhotodetectors operating in the ultraviolet (UV) play a pivotal role in applications such as ozone monitoring and biosensing. One key factor to successfully implementing such photodetectors is that they must be solar-blind to avoid detecting ambient visible and infrared light. Unfortunately, UV photodetectors based on silicon and other typical semiconductors are not natively solar-blind, since their band gap energies are in the visible range. Hexagonal boron nitride (h-BN) is an example of a wide band gap semiconductor which shows promise for use as the absorbing medium in a UV photode

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5

Masuzawa, T., I. Saito, M. Onishi, et al. "High sensitivity photodetector made of amorphous selenium and diamond cold cathode." Canadian Journal of Physics 92, no. 7/8 (2014): 667–70. http://dx.doi.org/10.1139/cjp-2013-0648.

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In the present study, high-sensitivity photodetection has been demonstrated using an amorphous selenium (a-Se) based photodetector driven by nitrogen-doped diamond cold cathode. The emission current – applied voltage characteristics are compared between different lighting conditions, and their sensitivities are evaluated in terms of nominal quantum efficiency. The estimated nominal quantum efficiency was 10–40 for visible and up to 1000 for ultraviolet, proving a successful photodetection utilizing carrier multiplication in a-Se.

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6

Tsay, Chien-Yie, Shih-Ting Chen, and Man-Ting Fan. "Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors." Coatings 9, no. 4 (2019): 277. http://dx.doi.org/10.3390/coatings9040277.

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The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of t

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7

Tsai, Tsung-Ying, Shoou-Jinn Chang, Wen-Ying Weng, et al. "A Visible-Blind TiO2Nanowire Photodetector." Journal of The Electrochemical Society 159, no. 4 (2012): J132—J135. http://dx.doi.org/10.1149/2.008205jes.

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8

Wang, Cheng-Jyun, Hsin-Chiang You, Jen-Hung Ou, Yun-Yi Chu, and Fu-Hsiang Ko. "Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors." Nanomaterials 10, no. 3 (2020): 458. http://dx.doi.org/10.3390/nano10030458.

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Direct ink-jet printing of a zinc-oxide-based thin-film transistor (ZnO-based TFT) with a three-dimensional (3-D) channel structure was demonstrated for ultraviolet light (UV) and visible light photodetection. Here, we demonstrated the channel structures by which temperature-induced Marangoni flow can be used to narrow the channel width from 318.9 ± 44.1 μm to 180.1 ± 13.9 μm via a temperature gradient. Furthermore, a simple and efficient oxygen plasma treatment was used to enhance the electrical characteristics of switching ION/IOFF ratio of approximately 105. Therefore, the stable and excell

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9

Jia, Feixiang, Fan Huang, Sheng Ouyang, et al. "Design of photoactive hybrid based intelligent photodetectors for identifying the detected wavelength." Journal of Materials Chemistry C 4, no. 46 (2016): 10797–803. http://dx.doi.org/10.1039/c6tc03449g.

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The similar response time for UV and visible light of the graphene/CdS photodetector is intentionally tuned by inserting ZnS films to produce the graphene/ZnS/CdS photodetector, which can be used as a characteristic parameter to distinguish the detected UV and visible light.

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10

Mallows, John, Miquel Planells, Vishal Thakare, Reshma Bhosale, Satishchandra Ogale, and Neil Robertson. "p-Type NiO Hybrid Visible Photodetector." ACS Applied Materials & Interfaces 7, no. 50 (2015): 27597–601. http://dx.doi.org/10.1021/acsami.5b09291.

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11

Jimenéz-Vivanco, María R., Godofredo García, Jesús Carrillo, et al. "Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector." Nanomaterials 10, no. 2 (2020): 222. http://dx.doi.org/10.3390/nano10020222.

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Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not con

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12

Yin, Bing, Heqiu Zhang, Yu Qiu, Yingmin Luo, Yu Zhao, and Lizhong Hu. "The light-induced pyro-phototronic effect improving a ZnO/NiO/Si heterojunction photodetector for selectively detecting ultraviolet or visible illumination." Nanoscale 9, no. 44 (2017): 17199–206. http://dx.doi.org/10.1039/c7nr06037h.

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13

Duan, Li, Feng Wei, Jibin Fan, et al. "Low-Cost Fabrication of UV Photodetector Based on Hexagonal Nanocrystal ZnO:Al/p-Si Heterojunction." Nano 11, no. 02 (2016): 1650019. http://dx.doi.org/10.1142/s1793292016500193.

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ZnO:Al/p-Si heterojunction was fabricated by depositing a hexagonal nanocrystal ZnO:Al film on p-type Si substrate using a simple chemical bath deposition (CBD) method. The vertically aligned hexagonal ZnO:Al nanocrystals reduce the grain boundary scattering and provide good conductivity. The ZnO:Al/Si heterojunction shows obvious photocurrent under ultraviolet (UV) illumination. A high UV-to-visible rejection ratio of the ZnO:Al/Si heterojunction indicates that the hexagonal nanocrystal ZnO:Al film is a good material for fabricating UV photodetectors. Furthermore, the response speed of the ph

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14

Louro, P., V. Silva, J. Costa, M. A. Vieira, and M. Vieira. "Transmission of Signals Using White LEDs for VLC Application." MRS Advances 1, no. 55 (2016): 3661–66. http://dx.doi.org/10.1557/adv.2016.372.

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ABSTRCTIn this paper a photodetector working as an active optical filter device is used to detect modulated visible optical signals for applications based on Visible Light Communication (VLC). The proposed application demonstrates the viability of indoor positioning using VLC technology established by the modulation of indoor ultra-bright RGB white LEDs. The signals of the internal red and blue chips of the white LEDs were modulated at specific frequencies and the generated photocurrent was measured by a pin-pin photodetector based on a-SiC:H/a-Si:H. This device operates as a visible optical f

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15

Zhang, Yi, Jian Lv, Longcheng Que, Guanyu Mi, Yun Zhou, and Yadong Jiang. "A visible-infrared double band photodetector absorber." Results in Physics 18 (September 2020): 103283. http://dx.doi.org/10.1016/j.rinp.2020.103283.

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16

Li, Yuan, Mingjia Zhang, Xiuli Hu, et al. "Graphdiyne Visible‐Light Photodetector with Ultrafast Detectivity." Advanced Optical Materials 9, no. 6 (2021): 2001916. http://dx.doi.org/10.1002/adom.202001916.

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17

Xiao, Yifan, Long Min, Xinke Liu, et al. "Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition." Nanophotonics 9, no. 9 (2020): 3035–44. http://dx.doi.org/10.1515/nanoph-2019-0562.

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AbstractThe MoS2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS2 film on SiC substrate shows high quality and thermal stability, in which the full width at half-maximum and first-order temperature coefficient for the $E_{2g}^1$ Raman mode are 4.6 cm−1 and −0.01382 cm−1/K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, i

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18

Shao, Dali, Weiguang Zhu, Guoqing Xin, et al. "A high performance UV–visible dual-band photodetector based on an inorganic Cs2SnI6 perovskite/ZnO heterojunction structure." Journal of Materials Chemistry C 8, no. 5 (2020): 1819–25. http://dx.doi.org/10.1039/c9tc05940g.

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19

AHN, J., B. GAN, Q. ZHANG, et al. "CHARACTERISTICS OF CVD DIAMOND FILMS IN DETECTING UV, X-RAY AND ALPHA PARTICLE." International Journal of Modern Physics B 16, no. 06n07 (2002): 1018–23. http://dx.doi.org/10.1142/s0217979202010798.

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The CVD diamond UV photodetector shows more than four orders of photoresponsivity discrimination between UV and visible light. Post-treatment on as-fabricated photodetector is essential for a good response to UV light and blindness to visible light. The CVD diamond X-ray detector shows linear dependence of photocurrent on X-ray intensity and high response speed. The mapping of charge collection efficiency on the whole sensing area of a CVD diamond alpha particle detector has been obtained using ion-beam-induced charge microscopy technique. Three peaks have been observed in the charge collectio

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20

Dias, Sandra, Kishan Lal Kumawat, and S. B. Krupanidhi. "CH3NH3PbBr3 quantum dots for visible wavelength photodetector applications." Journal of Materials Science: Materials in Electronics 30, no. 3 (2019): 3061–68. http://dx.doi.org/10.1007/s10854-018-00585-2.

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21

Ashraf, I. M., Mohd Shkir, S. AlFaify, et al. "Development and characterization of TlGaSe2 thin film-based photodetector for visible-light photodetector applications." Optical Materials 103 (May 2020): 109834. http://dx.doi.org/10.1016/j.optmat.2020.109834.

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22

Li, Xiaomeng, Xiufang Chen, Xiangang Xu, Xiaobo Hu, and Zhiyuan Zuo. "Enhanced Performance of a Visible Light Detector Made with Quasi-Free-Standing Graphene on SiC." Materials 12, no. 19 (2019): 3227. http://dx.doi.org/10.3390/ma12193227.

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The excellent optoelectronic properties of graphene give it great potential for applications in optical detection. Among the graphenes obtained through many synthetic methods, epitaxial graphene obtained by thermal decomposition on silicon carbide has remarkable advantages for preparing photodetectors. In this research, epitaxial graphene has been successfully prepared on a silicon surface (0001) of semi-insulating 4H-SiC substrate with a size of 10 mm × 10 mm and epitaxial graphene has been converted to quasi-free-standing graphene by hydrogen passivation. Two metal-graphene-metal photodetect

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23

Zhou, Hai, Zehao Song, Pan Tao, et al. "Self-powered, ultraviolet-visible perovskite photodetector based on TiO2 nanorods." RSC Advances 6, no. 8 (2016): 6205–8. http://dx.doi.org/10.1039/c5ra27840f.

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24

Zhou, Hai, Pengbin Gui, Qiuheng Yu, Jun Mei, Hao Wang, and Guojia Fang. "Self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diodes." Journal of Materials Chemistry C 3, no. 5 (2015): 990–94. http://dx.doi.org/10.1039/c4tc02390k.

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25

Sun, Da, Yue Gang Fu, Jing Yuan Duan, and An Cun Shi. "A Novel Receiver in Visible Light Communication Based on RGB LEDs." Applied Mechanics and Materials 543-547 (March 2014): 2283–87. http://dx.doi.org/10.4028/www.scientific.net/amm.543-547.2283.

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In this paper, we demonstrate a novel receiver in visible light communication system based on RGB LEDs. It contains three major parts the collimating lens, the spectro-device and the photodetector. The mixed RGB signal lights are captured, separated and received by the collimating lens the spectro-device and the photodetector respectively. Through the adjustment of the collimating lens, the receiver can receive enough light even if the distance between the signal light source and the receiver is changed. The receiver has the advantages of strong mobility and strong ability of receiving signal

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26

Lee, Jae Woong, Do Young Kim, Sujin Baek, Hyeonggeun Yu, and Franky So. "Photodetectors: Inorganic UV-Visible-SWIR Broadband Photodetector Based on Monodisperse PbS Nanocrystals (Small 10/2016)." Small 12, no. 10 (2016): 1246. http://dx.doi.org/10.1002/smll.201670050.

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27

Kim, Hyeonghun, Woochul Kim, Jiyoon Park, et al. "Surface conversion of ZnO nanorods to ZIF-8 to suppress surface defects for a visible-blind UV photodetector." Nanoscale 10, no. 45 (2018): 21168–77. http://dx.doi.org/10.1039/c8nr06701e.

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28

Xie, Bing He, Guang Tao Fei, Shao Hui Xu, Xu Dong Gao, Jun Xi Zhang, and Li De Zhang. "Tunable broadband wavelength-selective enhancement of responsivity in ordered Au-nanorod array-modified PbS photodetectors." Journal of Materials Chemistry C 6, no. 7 (2018): 1767–73. http://dx.doi.org/10.1039/c7tc04884j.

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29

Liu, Gangzha, Yan Li, Bo Li, et al. "High-performance photodetectors based on two-dimensional tin(ii) sulfide (SnS) nanoflakes." Journal of Materials Chemistry C 6, no. 37 (2018): 10036–41. http://dx.doi.org/10.1039/c8tc03501f.

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30

Lin, Chang-Yu, Rajesh Kumar Ulaganathan, Raman Sankar, et al. "Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications." Journal of Materials Chemistry C 9, no. 32 (2021): 10478–86. http://dx.doi.org/10.1039/d1tc02129j.

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31

Kakati, Jumi, and Pranayee Datta. "Schottky junction UV photodetector based on CdS and visible photodetector based on CdS:Cu quantum dots." Optik 126, no. 18 (2015): 1656–61. http://dx.doi.org/10.1016/j.ijleo.2015.05.054.

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32

Zhu, Linghui, Chao Li, Yujia Li, et al. "Visible-light photodetector with enhanced performance based on a ZnO@CdS heterostructure." Journal of Materials Chemistry C 3, no. 10 (2015): 2231–36. http://dx.doi.org/10.1039/c4tc02890b.

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33

Wang, Cheng-Jyun, Hsin-Chiang You, Kuan Lin, Jen-Hung Ou, Keng-Hsien Chao, and Fu-Hsiang Ko. "Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure." Materials 12, no. 21 (2019): 3639. http://dx.doi.org/10.3390/ma12213639.

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Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm awa

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34

Maitra, T., S. Mukherjee, A. Pradhan, S. Mukherjee, A. Nayak, and S. Bhunia. "Fast-response symmetric coplanar Ni/AlGaInP/Ni visible photodetector." Sensors and Actuators A: Physical 305 (April 2020): 111933. http://dx.doi.org/10.1016/j.sna.2020.111933.

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35

Inamdar, S. I., V. V. Ganbavle, and K. Y. Rajpure. "ZnO based visible–blind UV photodetector by spray pyrolysis." Superlattices and Microstructures 76 (December 2014): 253–63. http://dx.doi.org/10.1016/j.spmi.2014.09.041.

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36

B., Hemanth Kumar, and Santhosh Kumar M.C. "Indium sulfide based metal-semiconductor-metal ultraviolet-visible photodetector." Sensors and Actuators A: Physical 299 (November 2019): 111643. http://dx.doi.org/10.1016/j.sna.2019.111643.

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37

Wang, Wenzhen, Haitao Xu, Jiang Cai, et al. "Visible blind ultraviolet photodetector based on CH_3NH_3PbCl_3 thin film." Optics Express 24, no. 8 (2016): 8411. http://dx.doi.org/10.1364/oe.24.008411.

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38

Zhao, Wu, Lin Liu, Manzhang Xu, et al. "Single CdS Nanorod for High Responsivity UV-Visible Photodetector." Advanced Optical Materials 5, no. 12 (2017): 1700159. http://dx.doi.org/10.1002/adom.201700159.

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39

Luo, Lin-Bao, Xiao-Bao Yang, Feng-Xia Liang, et al. "Transparent and flexible selenium nanobelt-based visible light photodetector." CrystEngComm 14, no. 6 (2012): 1942. http://dx.doi.org/10.1039/c2ce06420k.

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40

Ali, Farman, N. Periasamy, Meghan P. Patankar, and K. L. Narasimhan. "Integrated Organic Blue LED and Visible−Blind UV Photodetector." Journal of Physical Chemistry C 115, no. 5 (2011): 2462–69. http://dx.doi.org/10.1021/jp110381h.

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41

Ismail, Raid A., Ali M. Mousa, and Suaad S. Shaker. "Preparation of visible-enhanced PbI2/MgO/ Si heterojunction photodetector." Optik 202 (February 2020): 163585. http://dx.doi.org/10.1016/j.ijleo.2019.163585.

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42

Liu, Xianbin, Hejun Du, Penghua Wang, Teik-Thye Lim, and Xiao Wei Sun. "A high-performance UV/visible photodetector of Cu2O/ZnO hybrid nanofilms on SWNT-based flexible conducting substrates." J. Mater. Chem. C 2, no. 44 (2014): 9536–42. http://dx.doi.org/10.1039/c4tc01585a.

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43

de Araújo, Estácio P., Adryelle N. Arantes, Ivani M. Costa, and Adenilson J. Chiquito. "A Study of Visible-Blind Properties of a SnO2’s Nanowires Network Photodetector." Engineering Proceedings 6, no. 1 (2021): 40. http://dx.doi.org/10.3390/i3s2021dresden-10149.

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Summary: We developed an SnO2 nanowire network visible-blind ultraviolet (UV) photodetector for applications in fields such as safety systems, exposure control, and decontamination processes, among others [...]

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44

BINDL, DOMINICK J., and MICHAEL S. ARNOLD. "SEMICONDUCTING CARBON NANOTUBE PHOTOVOLTAIC PHOTODETECTORS." International Journal of High Speed Electronics and Systems 20, no. 03 (2011): 687–95. http://dx.doi.org/10.1142/s0129156411006970.

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A photovoltaic photodetector harnessing near infrared band gap absorption by thin films of post-synthetically sorted semiconducting single walled carbon nanotubes ( s -SWCNTs) is described. Peak specific detectivity of 6×1011 Jones at -0.1 V bias at 1210 nm is achieved using a heterojunction device architecture: indium tin oxide/ ca. 5 nm s -SWCNT / 120 nm C60 / 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / Ag. The photodiodes are characterized by a series resistance of 2.9 Ω cm2 and a rectification ratio of 104 at ±1V. These results are expected to guide the exploration of new c

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45

Kim, Juhyeon, Srinivasa Cheekati, Tuba Sarwar, and Pei-Cheng Ku. "Designing an Ultrathin Film Spectrometer Based on III-Nitride Light-Absorbing Nanostructures." Micromachines 12, no. 7 (2021): 760. http://dx.doi.org/10.3390/mi12070760.

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In this paper, a spectrometer design enabling an ultrathin form factor is proposed. Local strain engineering in group III-nitride semiconductor nanostructured light-absorbing elements enables the integration of a large number of photodetectors on the chip exhibiting different absorption cut-off wavelengths. The introduction of a simple cone-shaped back-reflector at the bottom side of the substrate enables a high light-harvesting efficiency design, which also improves the accuracy of spectral reconstruction. The cone-shaped back-reflector can be readily fabricated using mature patterned sapphir

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46

ATIWONGSANGTHONG, N., S. NIEMCHAROEN, and W. TITIROONGRUANG. "NANOPOROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR." Journal of Nonlinear Optical Physics & Materials 19, no. 04 (2010): 713–21. http://dx.doi.org/10.1142/s0218863510005637.

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In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al /nanoporous silicon Schottky-barrier jun

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47

Li, Gaolin, Zhenhua Jiang, Weilin Wang, Zengyong Chu, Ye Zhang, and Chunhua Wang. "Electrospun PAN/MAPbI3 Composite Fibers for Flexible and Broadband Photodetectors." Nanomaterials 9, no. 1 (2019): 50. http://dx.doi.org/10.3390/nano9010050.

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Methylammonium lead triiodide perovskite (CH3NH3PbI3, MAPbI3) has been emerging as an easy processing and benign defect material for optoelectronic devices. Fiber-like perovskite materials are especially in demand for flexible applications. Here we report on a kind of polyacrylonitrile (PAN)/MAPbI3 composite fiber, which was electrospun from the mixing solution of PAN and MAPbI3. The absorption edge and optical gap of the PAN/MAPbI3 composite fibers can be easily tuned as the ratio of the perovskite changes. Both the moisture stability and the thermal stability of the perovskite are improved w

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48

Wu, Zhenping, Lei Jiao, Xiaolong Wang, et al. "A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction." Journal of Materials Chemistry C 5, no. 34 (2017): 8688–93. http://dx.doi.org/10.1039/c7tc01741c.

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Zhao, Xin, Fei Wang, Linlin Shi, Yunpeng Wang, Haifeng Zhao, and Dongxu Zhao. "Performance enhancement in ZnO nanowire based double Schottky-barrier photodetector by applying optimized Ag nanoparticles." RSC Advances 6, no. 6 (2016): 4634–39. http://dx.doi.org/10.1039/c5ra20161f.

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Zhang, Ting, Feng Wang, Peng Zhang, et al. "Low-temperature processed inorganic perovskites for flexible detectors with a broadband photoresponse." Nanoscale 11, no. 6 (2019): 2871–77. http://dx.doi.org/10.1039/c8nr09900f.

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Abstract:

The flexible perovskite photodetector, fabricated by a modified one-step method, showed a broadband spectrum response from blind ultraviolet to visible light, and exhibited excellent mechanical flexibility and improved environmental stability.

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