Relevant bibliographies by topics / Void and hillock formation

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Academic literature on the topic 'Void and hillock formation'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

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Journal articles on the topic "Void and hillock formation"

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Sun, Hao Liang, and Ming Wei. "Stress Migration Induced Formation of Voids / Hillocks in Tungsten Films." Advanced Materials Research 311-313 (August 2011): 1831–34. http://dx.doi.org/10.4028/www.scientific.net/amr.311-313.1831.

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Stress migration behaviors in Tungsten (W) films were investigated according to morphological characteristics and residual stress analysis. Results show that stress relaxtion induced formation of voids and hillocks strips, which resembles the void / hillock pair observed in Cu film electromigration experiments. Analysis indicate that the formation of chocolate sphere shaped W hillocks is intimately related to the atoms diffusivity.
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Zhang, Yuan Xiang, Jun Wu, and Ying Yu Ji. "Prediction of Electromigration Induced Void and Hillock for IC Interconnect Structures." Key Engineering Materials 546 (March 2013): 6–11. http://dx.doi.org/10.4028/www.scientific.net/kem.546.6.

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This paper investigates the electromigration (EM) induced void and hillock generation in IC interconnect structures. The driving force for electromigration induced failure considered here includes the electron wind force, stress gradient, temperature gradient, as well as the atomic density gradient, which were neglected in many of the existing studies on eletromigration. The comparison of void/hillock formation and the time to failure (TTF) life through numerical example of the SWEAT structure with the measurement results are studied and discussed.
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Korhonen, M. A., P. Børgesen, and Che-Yu Li. "Mechanisms of Stress-Induced and Electromigration-Induced Damage in Passivated Narrow Metallizations on Rigid Substrates." MRS Bulletin 17, no. 7 (July 1992): 61–69. http://dx.doi.org/10.1557/s0883769400041671.

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Narrow, passivated metal lines are generally used as interconnects in VLSI microcircuits at the chip level. In most metals, high electric current densities lead to a mass flow of constituent atoms accompanying the current of electrons. Electromigration (EM) has long been considered an important reliability concern in the semiconductor industry because the current-induced atomic fluxes can give rise to void formation and open circuits, or hillock formation and short circuits between nearby interconnects. The problem is exacerbated because of the continued trend of increasing the density of the devices on the chip. This means that the line widths of the interconnects have been reduced and are now in the submicron range; correspondingly, the current densities have increased and may be as high as 106 A/cm2. Recently, thermal-stress-induced damage in metallizations has also been recognized as an important reliability concern, perhaps of the same gravity as EM. Thermal stresses in the metallizations are caused by the different thermal expansion coefficients of the metal and the substrate. Stress-induced void and hillock formation are the main causes of in terconnect failures before service. More recently, concern has been growing that thermal stresses or thermal-stress-induced voids may enhance the subsequent electromigration damage during the service life of the microchips.For simplicity, this article addresses the case of pure aluminum metallizations on oxidized silicon substrates. However, much of what is said applies to other metal-rigid substrate systems as well, most notably to various aluminum and copper-based metallizations on ceramic substrates. The present treatment emphasizes void formation and growth in the metallizations during nd after cooldown from elevated temperatures, or those due to electromigration in service or testing conditions. Many of the mechanisms we explain are also applicable to hillock formation under compressive stresses, whether due to EM or thermal cycles during manufacturing.
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Takao, Hanabusa, Kazuya Kusaka, Kenta Kaneko, Osamu Sakata, and Nishida Masayuki. "Stress-Assisted Atomic Migration in Thin Copper Films." Key Engineering Materials 353-358 (September 2007): 671–74. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.671.

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Stress-assisted atomic migration occurs in thin films due to thermal stress development, followed by hillock and void formation on a film surface. Relation between thermal stresses and hillock formation was investigated on copper films with and without passivation layer. Copper films with a thickness of 10, 50 and 100 nm on oxidized silicon wafer were prepared for investigating thermal stress and hillock formation. In-situ thermal stress observation by X-ray measurement revealed that compressive stresses develop in an early stage of heating followed by a sudden decrease in the temperature region between 100 and 200 deg. In a cooling stage, stresses in a film linearly changed with decreasing temperature to form a tensile residual stress state. Surface morphology is observed by optical microscope and SEM after the heat cycle as well as at elevated temperatures in a vacuum chamber. Dome-like swells were formed on an AlN passivation layer. Almost of all of the swells on 100 nm thick film collapsed after the heat treatment up to 350 deg whereas the swells on 10 nm thick film had no collapse excepting a few case. Comparing with the film without passivation, the swell is considered to be the result of atomic migration of copper film to form hillocks in the interface between copper film and AlN passivation film during heating. Atoms are considered to migrate reversibly into the copper film in the cooling stage, resulting to make vacant hall in the swell of AlN film and then collapse due to tensile stress development.
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Mansourian, Ali, Seyed Amir Paknejad, Qiannan Wen, Khalid Khtatba, Anatoly Zayats, and Samjid H. Mannan. "Electromigration Phenomena in Sintered Nanoparticle Ag Systems Under High Current Density." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000059–63. http://dx.doi.org/10.4071/hiten-session2-paper2_3.

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Electromigration (EM) refers to the movement of atoms inside a conductor due to momentum exchange with the conduction electrons. In this work the EM effect in samples of porous Ag fabricated from nanoparticles of Ag in a pressure free sintering process is studied. Current densities of 2.5×104 − 1.7×105 A/cm2 were applied to the samples for periods ranging up to 500 h. In a typical EM setup with a non-porous conductor, void formation occurs at the cathode and hillock formation at the anode. In this study, voids were not directly observed, but cracks were formed after prolonged electromigration, presumably as a result of void accumulation and coalescence. When the samples were placed in 150 °C ambient no hillocks were observed, but at room temperature nanorods were formed with sizes ranging up to 20 μm in length, typically 25 nm in diameter and with aspect ratios ranging from 20 to 1000. It was found that interrupting and restarting the current resulted in growth of new nanorods rather than growth of existing ones, and that growth was limited by welding of individual nanorods when a critical number density was reached. While similar nanorods have been formed from Ag thin films using thermal stress , the location of nanorods was unusual in that while the number density was highest at the anode, significant numbers also appeared at central and cathode locations. Another unusual feature of the observed EM was that the initial porous structure became refined with coarse pores and grains transforming into a fine grained and fine pored structure with elongated and locally orientated pores and grains. Elemental composition studies provide tentative understanding of the nanorod number density, size distribution and growth mechanism. In the geometry utilized for this study, temperature gradients are known to strongly influence the divergence of the EM induced atomic flux and hence resistivity measurements and COMSOL Finite Element modelling was used to determine the temperature in the sample taking into account joule heating, convection and conduction processes.
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Takaya, Ryuji, Kazuhiko Sasagawa, Takeshi Moriwaki, and Kazuhiro Fujisaki. "Computational evaluation of optimal reservoir and sink lengths for threshold current density of electromigration damage considering void and hillock formation." Microelectronics Reliability 118 (March 2021): 114060. http://dx.doi.org/10.1016/j.microrel.2021.114060.

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Thouless, M. D., J. Gupta, and J. M. E. Harper. "Stress development and relaxation in copper films during thermal cycling." Journal of Materials Research 8, no. 8 (August 1993): 1845–52. http://dx.doi.org/10.1557/jmr.1993.1845.

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The reliability of integrated-circuit wiring depends strongly on the development and relaxation of stresses that promote void and hillock formation. In this paper an analysis based on existing models of creep is presented that predicts the stresses developed in thin blanket films of copper on Si wafers subjected to thermal cycling. The results are portrayed on deformation-mechanism maps that identify the dominant mechanisms expected to operate during thermal cycling. These predictions are compared with temperature-ramped and isothermal stress measurements for a 1 μm-thick sputtered Cu film in the temperature range 25–450 °C. The models successfully predict both the rate of stress relaxation when the film is held at a constant temperature and the stress-temperature hysteresis generated during thermal cycling. For 1 μm-thick Cu films cycled in the temperature range 25–450 °C, the deformation maps indicate that grain-boundary diffusion controls the stress relief at higher temperatures (>300 °C) when only a low stress can be sustained in the films, power-law creep is important at intermediate temperatures and determines the maximum compressive stress, and that if yield by dislocation glide (low-temperature plasticity) occurs, it will do so only at the lowest temperatures (<100 °C). This last mechanism did not appear to be operating in the film studied for this project.
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Kitchen, D. R., S. L. Linder, R. E. Omlor, and P. F. Lloyd. "Crystallographic orientation of aluminum whiskers formed by electromigration using transmission electron microscopy." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 370–71. http://dx.doi.org/10.1017/s0424820100126640.

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Electromigration is a well known phenomenon in the aluminum films of an integrated circuit and occurs at elevated temperatures under the influence of current densities exceeding 10 amps/cm2. The failure modes are characteristically cracks, voids or hillocks in the metal lines, causing open-circuits. The majority of research in the electromigration of aluminum conductors examines the formation of these voids and hillocks in the linestripes. This is unfortunate since experiments have shown that short-circuits caused by whisker formation between adjacent stripes or between multi-level structures can be equally damaging to device performance. Most previous work has involved examining whiskers grown by annealing, however, very little work has been carried out on whiskers produced by electromigration. In this investigation aluminum whiskers formed by electromigration were studied with a transmission electron microsope to determine their crystallographic orientation.
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Song-Sheng Tan, M. L. Reed, Hongtao Han, and R. Boudreau. "Mechanisms of etch hillock formation." Journal of Microelectromechanical Systems 5, no. 1 (March 1996): 66–72. http://dx.doi.org/10.1109/84.485218.

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Valencia, Felipe J., Rafael I. González, Eduardo M. Bringa, and Miguel Kiwi. "Hillock formation on nanocrystalline diamond." Carbon 119 (August 2017): 219–24. http://dx.doi.org/10.1016/j.carbon.2017.04.020.

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Dissertations / Theses on the topic "Void and hillock formation"

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Pekarcikova, Marcela. "Migrationsbeständigkeit von Al- und Cu-Metallisierungen in SAW-Bauelementen." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2005. http://nbn-resolving.de/urn:nbn:de:swb:14-1137429879299-71754.

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Im Rahmen dieser Arbeit wurde die Akustomigrationsresistenz von in Kupfertechnologie hergestellten SAW-Strukturen charakterisiert und diese mit dem Schädigungsverhalten von Al-basierten SAW-Strukturen unter gleichen Belastungsbedingungen verglichen. Dies wurde durch die Anwendung einer speziellen Power-SAW-Teststruktur ermöglicht. Das Schädigungsniveau wurde hierbei über die irreversible Verschiebung der Peakfrequenz bzw. durch Änderungen im elektrischen Widerstand sowie durch mikroskopische Untersuchung der Mikrostruktur beurteilt. Die durchgeführten SAW-Belastungsexperimente mit HF-Leistungen bis zu 4,5 W zeigten, dass das entwickelte Ta-Si-N/Cu/Ta-Si-N-System im Vergleich zur Al/Ti-Metallisierung eine Akustomigrationsresistenz besitzt, die um mehr als drei Größenordnungen höher ist als jene der Al/Ti-Metallisierung. Hohe SAW-Belastungen verursachten sowohl im Al- als auch im Cu-Testwandler Hügel- und Lochbildung. Während die Hügel in der Al/Ti-Metallisierung senkrecht zur Oberfläche bis zu einer Höhe von 1 µm und die Löcher bis hinab an die Ti-Schicht wuchsen, bildeten sich in den extrem belasteten Cu-basierten Wandlern nur flache Hügel und schmale Löcher aus, welche noch mit der Deckschicht vollständig bedeckt waren. Anhand von REM/EBSD, TEM sowie FIB-Untersuchungen konnte ein relevanter Zusammenhang zwischen der Mikrostruktur und dem Schädigungsverhalten aufgezeigt werden.
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Celik, Aytac. "Investigation Of Electromigration Induced Hillock And Edge Void Dynamics On The Interconnect Surface By Computer Simulation." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/2/12605300/index.pdf.

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The Electromigration-induced failure of metallic interconnects is a complicated process, which involves flux divergence, vacancy and atom accumulation with or without compositional variations, void and hillocks nucleation, growth and shape changes. Hillocks and surface void dynamics in connection with the critical morphological evaluation have been investigated in order to understand the conditions under which premature failure of metallic thin interconnects occur. In this thesis, an interconnect is idealized as a two dimensional electrically conducting strip which contains gaussian form hillock or edge void. Indirect boundary element is used to predict the evolution of the surface after the applied electric field. Computer simulation results show that the surface crystal structure of is extremely important in the determination of the life time of thin film single crystal interconnect lines. Under the applied electrostatic field not only the degree of rotational symmetry (parameter, m) but also the orientation of the surface plane play dominant role in the development of the surface topology and the formation of the fatal EM induced voids. The degree of anisotropy in the surface diffusion coefficient, and the intensity of the electron wind parameter may have great influence on the evolution regime actually taking place on the surfaces and at sidewalls of the interconnects.
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Lowe, Julian Robert. "Void formation in resin transfer moulding." Thesis, University of Nottingham, 1993. http://eprints.nottingham.ac.uk/11626/.

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In recent years interest has grown in the use of composite components within the automotive industry. Fibre reinforced plastic (FRP) components are of particular interest to the industry, since lower tooling costs and part consolidation can be utilised, whilst lighter, stiffer components can be produced. Several methods are available to produce FRP components at high volumes, including compression moulding (using dough and sheet moulding compounds), reinforced reaction injection moulding (RRIM) and liquid moulding processes (resin transfer moulding (RTM) and structural reaction injection moulding (SRIM)). RTM is a closed mould process, which is widely used to produce components economically in low volumes using matched moulds to produce two good surfaces. The absence of a high volume manufacturing technology, however, has impeded the acceptance and advance of RTM within the automotive industry. A research programme was established at the University of Nottingham to address the problems associated with the use of RTM for high volume manufacture. This programme has considered the topics of process technology, processing characteristics of polyester resin systems and fibre preforms, fibre wet-out and interfacial bonding, mould design, microwave pre-heating of reactive resin systems and process modelling. This thesis concerns the research which was undertaken to identify the causes of void formation during the impregnation and polymerisation stages of RTM, and methods of reducing the final void content within the component. The impregnation phase of the RTM process was identified as being the stage where the majority of voids were formed. A study of oil impregnation (having a similar viscosity to that of resin) into reinforcement was undertaken to determine the reasons for uneven flow and air entrapment. The dry reinforcements were studied to assess the microstructure of the preforms in order to determine reasons for obstruction of the resin flow. Fabric stitching, thermoplastic binder and size deposits were identified as potential causes of flow impediment. Fibre orientation and preform stacking were also assumed to assist in the development of uneven flow, leading to air entrapment. A major factor determining the formation of microvoids within fibre bundles was identified as the transverse impregnation of resin into high Tex fibre bundles. The major moulding process variables of injection pressure, vent pressure, fibre volume fraction, mould temperature and resin pre-heating have been assessed, to determine their effect on the void content within unidirectional and CFRM reinforced polyester laminates. It was observed that vacuum assistance during impregnation reduced void formation, although higher exotherm pressures and the possibility of monomer boiling arise from its use. A simple impregnation model was developed to assess the microscopic impregnation rates between fibre bundles, in the capillary between fibres and transversely into fibre bundles. The results from this model were compared with actual moulding histories. The findings of the overall work are discussed and suggestions proposed for the reduction of void content in RTM automotive components.
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Sastry, Ghatty S. S. R. K. "Cold Model Study Of Formation And Breaking Of Raceway." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/185.

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The raceway in the ironmaking blast furnace is a void in front of the hot blast tuyeres where coke and supplementary fuel burn to supply heat to the ironmaking process. The air velocity through the tuyeres is high (around 200 m/s) and this causes the coke particles to circulate in a rotating flow field inside the raceway. The size and shape of the raceway determine the gas flow dstribution, the reactions that occur, and the temperature profiles in the lower part of the blast furnace. It is for these reasons that the raceway has been extensively researched in the past. . Literature review revealed that forming and breaking of the raceway has not been yet studied. So, in the present study, we have concentrated our effort to study the formation and breaking of the raceway for different blast and bed parameters. The experiments have been performed in two-dimensional glass models. An attempt has been made to develop a correlation for each case. The formation of the void has been studied with change in parameters like density and size of the particles, bed height. The theory of the void formation has been derived from the fundamental principles. The formation of raceway, has been studied with the change in blast parameters like particle density and diameter, bed height and model width. It was found that when raceway is formed there is a sudden increment in pressure drop. The condition for breaking of the raceway, has been studied with change in blast and bed parameters like particle size and density, bed height and model width. It was observed that during the breaking of raceway, pressure decreases continuously. New semi-empirical correlations have been developed using dimensional analysis for formation of void, formation of raceway, and breaking of the raceway. The raceway growth also characterized with change in model width, flow rate, particle diameter, density of the particles and bed height. A few experimental results have been compared with published data. New semi-empirical correlation have been developed using dimensional analysis for the growth of raceway. Velocity of the gas exiting from top of the bed has been measured with the help of hot wire anemometer. It was observed that the velocity leaving from the bed is more on top of the raceway compared to the velocity leaving from the other parts of the bed. High velocity was observed near the wall of the model. Coefficient of wall-friction and angle of internal friction in presence and absence of gas were studied to explain the effect of bed height on formation of the void and raceway. It was observed that in presence of gas, coefficient of friction between the particles and wall and angle of internal friction between particles decreased, compared to the values in absence of gas. To study the effect of mixed particles, on the formation and breaking of the raceway, different sized particles in fixed proportion were taken. It was found that the experiments were more reproducible in case of uniform sized particles compared to mixed particles. It was also observed that for the same average particle diameter, mixture particles requires more velocity to form the void and raceway. New semi-empirical correlations have been developed using dimensional analysis for the formation of void, formation of raceway, growth of the raceway, and breaking of the raceway. Finally, an attempt has been made to quantify the various forces (pressure, bed weight & frictional forces) present in the raceway. Results show that further investigation is required in quantifying these forces properly.
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Lee, Sangil. "Fundamental study of underfill void formation in flip chip assembly." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29755.

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Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2010.
Committee Chair: Baldwin, Daniel; Committee Member: Colton, Jonathan; Committee Member: Ghiaasiaan, Mostafa; Committee Member: Moon, Jack; Committee Member: Tummala, Rao. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Helmus, Rhena [Verfasser]. "Out-of-Autoclave Prepregs: Stochastic Modelling of Void Formation / Rhena Helmus." München : Verlag Dr. Hut, 2016. http://d-nb.info/1115549863/34.

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Dalleau, Dea-Dess David. "3-D time-depending simulation of void formation in metallization structures." [S.l. : s.n.], 2003. http://deposit.ddb.de/cgi-bin/dokserv?idn=969247761.

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Brandley, Mark Wesley. "Void Modeling in Resin Infusion." BYU ScholarsArchive, 2015. https://scholarsarchive.byu.edu/etd/5460.

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Resin infusion of composite parts has continually been reaching to achieve laminate quality equal to, or exceeding, the quality produced with prepreg in an autoclave. In order for this to occur, developers must understand the key process variables that go in to producing a laminate with minimal void content. The purpose of this research is to continue efforts in understanding 1) the effect of process conditions on the resultant void content, with a focus on resin infusion flow rate, 2) applying statistical metrics to the formation, location and size of voids formed, and 3) correlate these metrics with the local mechanical properties of the composite laminate. The variation in dispersion and formation of micro-voids and macro-voids varied greatly between the rates of flow the infusion occurred, especially in the non-crimp carbon fiber samples. Higher flow rates led to lower volumes of micro-voids in the beginning section of the carbon fiber laminates with macro-voids being introduced approximately half-way through infusion. This was determined to have occurred decreasing pressure gradient as the flow front moved away from the inlet. This variation in void content per location on the laminate was more evident in the carbon fiber samples than the fiberglass samples. Micro-voids follow void formation modeling especially when coupled with a pressure threshold model. Macro-void formation was also demonstrated to correlate strongly to void formation models when united with void mobility theories and pressure thresholds. There is a quick decrease in mechanical properties after the first 1-2% of voids signaling strength is mostly sensitive to the first 0-2% void content. A slight decrease in SBS was noticed in fiberglass laminates, A-F as v0 increased but not as drastically as represented in the NCF laminates, G and H. The lower clarity in the exponential trend could be due to the lack of samples with v0 greater than 0% but less than 1%. Strength is not well correlated to void content above 2% and could possibly be related to void morphololgy.
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Wahab, Azmi Abdul. "Three-dimensional analysis of creep void formation in steam-methane reformer tubes." Thesis, University of Canterbury. Mechanical Engineering, 2007. http://hdl.handle.net/10092/2691.

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In methanol processing plants, steam-methane reformers consist of hundreds of vertical tubes operating at temperatures up to 1000°C. These reformer tubes fail by creep through the formation of creep voids during service. Preliminary research showed that the occurrence of these voids was not random and may be related to certain microstructural features of the material. In the present research, the technique of serial sectioning was used to generate threedimensional reconstructions of voids in several steam-methane reformer tube samples with creep damage. The serial sectioning method and subsequent 3D reconstruction revealed creep void information such as size, density, location, and shape in three-dimensions, information that cannot be obtained from two-dimensional micrographs alone. Samples were obtained at various locations along the length of an ex-service reformer tube to investigate the effects of service conditions on the characteristics of creep voids. In addition, samples were taken from various positions along the wall thickness where there were differences in temperature, stress, and microstructure. Additionally, the identity and crystallographic orientations of the phases adjacent to creep voids were studied by electron backscatter diffraction (EBSD) to determine the crystallographic trends in creep void locations. Three dimensional observations revealed that creep voids were indeed not uniformly distributed through the volume in terms of their size, shape, and location. All voids appeared next to carbides and these voids came into contact with M₂₃C₆ precipitates somewhere along their perimeter. Most of the voids were found on austenite (ɣ) grain facets (the interface between two ɣ grains) but the larger voids were generally found at grain edges and corners. The grain boundaries where voids were located were generally oriented at 45 degrees with respect to the hoop stress direction. Here, the effective stress due to a combination of loading and temperature were highest. xviii Abstract EBSD results showed that 80% of the M₂₃C₆ precipitates surrounding these voids have an irrational crystallographic orientation relationship (OR) with the austenite matrix. In contrast, grain boundary precipitates in an aged sample always show a rational OR with respect to one adjacent grain. This implied that the preferred sites for creep voids are low registry boundaries between M₂₃C₆ precipitates and austenite. The data obtained from 3D observations were applied to a classic void growth model. Various permutations of the parameters obtained from this work were applied to the model to simulate conditions that may be beneficial to extending the service lives of reformer tubes. It was shown that the void growth model required accurate and representative materials constants for good estimation of life. Furthermore, the model revealed that more work was required in terms of observations of void nucleation in 3D, in order to fully utilize the model. Finally, it was shown that void density measurements are the most critical item for accurate prediction of growth of voids.
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Burton, Perry August. "In Situ Analysis of Void Formation at the Flow Front in RTM." BYU ScholarsArchive, 2018. https://scholarsarchive.byu.edu/etd/6844.

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The purpose of this research is to empirically investigate flow front void formation rates and post-formation bubble mobility behavior for composites produced via resin transfer molding (RTM).For this study, in situ observation of bubble formation and migration was accomplished by photographing resin flow progression during infusion tests of carbon reinforcements. An analysis strategy for use in batch processing sequential image sets is presented. The use of MATLAB to process and analyze binary images of infusions for void content has garnered satisfactory results and has shown that analysis of progressive image sequences can greatly enrich the volume of in situ measurements for a given study without compromising the data quality.Semi-automated MATLAB software analysis employed the representative image area (RIA) method to evaluate v0. It was found that the shorter the RIA length, and the more it follows the true flow front shape, the more representative the measured v0 was of the void formation at the flow front.Experimental evidence of in situ bubble formation and mobility behavior is presented. Stitch architecture of NCF reinforcements is shown to influence bubble formation at the flow front. Bubble mobility mechanisms (such as escape and entrapment) are related to stitch orientation relative to the fluid flow direction. Different stitching orientations exhibited different effects on post-formation mobility.Void formation is presented as a function of flow front velocity. Despite differences in preform configurations (stitch orientation with respect to flow) and injection flowrates, bubbles seem to form in a similar fashion for the 3 infusions of carbon fiber NCF reinforcement analyzed in this study. It is observed that bubbles form at stitch lines, regardless of stitch orientation.Bubble migration is documented for infusion of NCF reinforcement with stitching at different orientations. Qualitative observations of bubble migration during infusions of a dense preform of STW, plain weave fabric are discussed. Recommendations are given for future studies involving image-based analysis of in situ bubble formation and migration.
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Books on the topic "Void and hillock formation"

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MacDonald, Jacqueline Faye. Void formation in stationary and moving solids. Birmingham: University of Birmingham, 1988.

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Experimental study of void formation during aluminum solidification in reduced gravity. [Washington, DC]: National Aeronautics and Space Administration, 1993.

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Experimental study of void formation during aluminum solidification in reduced gravity. [Washington, DC]: National Aeronautics and Space Administration, 1993.

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Gilmore, Stephen, and Lisa Glennon. 1. The formation of adult relationships. Oxford University Press, 2018. http://dx.doi.org/10.1093/he/9780198811862.003.0001.

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This chapter examines the law surrounding the formation of the formal relationships of marriage and civil partnership, including the law on nullity. It also explores, by way of contrast, non-formal cohabiting relationships. Topics discussed include void and voidable marriages, sham marriages, forced marriages; the development of gay and lesbian rights; the road to same-sex marriage; and the legal consequences of marriage.
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Tudsri, Pattarapas, and Angkanawadee Pinkaew. Formation of Contract, Enforceability, and Pre-Contractual Liability in Thailand. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198808114.003.0019.

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This chapter examines issues concerning the formation of contract under Thai law. It discusses the background to the Thai Civil and Commercial Code 1925 and the French and German influences on its drafting. The chapter examines the interpretation of intention, which is integral to the notion of a juristic act for creation of contractual obligations. The direction to discern true intention, combined with notions of fictitious intention and concealed juristic act, enables a court to re-characterize transactions according to their true intention. Through the power to ‘transform a void act’, a court may also declare an act valid otherwise void for non-compliance with formalities governing one kind of juristic act, if it complies with the requirements of another juristic act. The chapter discusses the German concept of Vorvertrag or pre-contract in the context of transactions that do not comply with the formality requirements, and explains why the Thai judges have not embraced this concept. It also examines how a court imposes pre-contractual liability on a party breaking off from contract negotiations.
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Michael, Furmston, Tolhurst G J, and Mik Eliza. 11 Certainty and Completeness. Oxford University Press, 2016. http://dx.doi.org/10.1093/law/9780198724032.003.0011.

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This chapter discusses the issues of uncertainty and incompleteness in contract formation. A contract is said to be void if it is uncertain or incomplete. A term contained in the contract will be uncertain if it totally lacks meaning or if a court cannot determine the meaning the parties intended. Generally, a contract will be void for uncertainty if it is not possible to prescribe meaning to an essential term. A term will be incomplete if it does not adequately deal with an issue that has arisen under the contract and which falls within its subject matter. A contract will be void for being incomplete if any incomplete term or terms are essential to the contract and cannot be supplied by some gap-filling technique. The chapter also covers agreements to agree and agreements to negotiate, and methods by which the courts and the parties resolve uncertainty and incompleteness.
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Merkin QC, Robert, and Séverine Saintier. Poole's Textbook on Contract Law. Oxford University Press, 2019. http://dx.doi.org/10.1093/he/9780198816980.001.0001.

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Course-focused and comprehensive, the series provides an accessible overview of the key areas on the law curriculum. This book has been guiding students through contract law for many years. It places the law of contract clearly within its wider context, including the growing distinction between commercial and consumer contracting, before proceeding to provide detailed yet accessible treatment of all the key areas encountered when studying contract law. Part 1 considers formation, looking in detail at agreement, certainty and agreement mistakes, the enforceability of promises and the intention to be legally bound. Part 2 looks at content, interpretation, exemption clauses and unfair terms, performance, and breach. Part 3 considers the enforcement of contractual obligations including remedies, detailed treatment of damages for breach of contract, privity and third party rights, and discharge by frustration. Part 4 looks at methods of policing the making of a contract, such as non-agreement mistakes which render the contract void, misrepresentation, duress, undue influence, unconscionable bargains, and illegality. The book also includes references to relevant EU consumer legislation and introduces students to the various attempts (international and European) to produce a harmonized set of contract principles.
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Merkin QC, Robert, and Séverine Saintier. Poole's Textbook on Contract Law. 15th ed. Oxford University Press, 2021. http://dx.doi.org/10.1093/he/9780198869993.001.0001.

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Course-focused and comprehensive, Poole’s Textbook on Contract Law provides an accessible overview of the key areas on the law curriculum. This book has been guiding students through contract law for many years. It places the law of contract clearly within its wider context, including the growing distinction between commercial and consumer contracting, before proceeding to provide detailed yet accessible treatment of all the key areas encountered when studying contract law. Part 1 considers formation, looking in detail at agreement, certainty and agreement mistakes, the enforceability of promises and the intention to be legally bound. Part 2 looks at content, interpretation, exemption clauses and unfair terms, performance, and breach. Part 3 considers the enforcement of contractual obligations including remedies, detailed treatment of damages for breach of contract, privity and third party rights, and discharge by frustration. Part 4 looks at methods of policing the making of a contract, such as non-agreement mistakes which render the contract void, misrepresentation, duress, undue influence, unconscionable bargains, and illegality. The book also includes references to relevant EU consumer legislation and introduces students to the various attempts (international and European) to produce a harmonized set of contract principles.
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Gutjahr, Paul C., ed. The Oxford Handbook of the Bible in America. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780190258849.001.0001.

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The Oxford Handbook of the Bible in America is designed to address a noticeable void in resources focused on analyzing the Bible in America in specific historical moments and in relationship to specific institutions and cultural expressions. Paying attention to the Bible from its earliest appearance in seventeenth-century New England up through its presence and usage in twenty-first century America, this handbook takes seriously the fact that the Bible is both a physical object that has exercised considerable totemic power, as well as a text with a powerful intellectual design that has inspired a wide range of cultural rituals, social policies, and artistic expression. This Handbook brings together a number of established scholars, as well as younger scholars on the rise, to provide insightful overviews and rich bibliographic resources to those interested in the Bible’s role in the history of American cultural formation. Topics addressed in the Handbook include—but are not limited to—the Bible’s production, translation, distribution, and interpretation in the United States, the Bible’s usage and relationship to a host of American religious traditions and social movements, as well the Bible’s linkage to such things as American cinema, literature, art, music, amusement parks, environmentalism, theories of gender and race, education, and politics.
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Book chapters on the topic "Void and hillock formation"

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Todoroki, Shin-ichi. "Periodic Void Formation." In NIMS Monographs, 25–35. Tokyo: Springer Japan, 2014. http://dx.doi.org/10.1007/978-4-431-54577-4_3.

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Einasto, J. "Formation Of The Supercluster-Void Network." In Examining the Big Bang and Diffuse Background Radiations, 193–200. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0145-2_20.

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Roychowdhury, S., J. W. Gillespie, and S. G. Advani. "Void Formation and Growth in Thermoplastic Processing." In Computer Aided Design in Composite Material Technology III, 89–107. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2874-2_7.

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Shi, Yun Feng, and Donald W. Brenner. "Hotspot Formation in Shock-Induced Void Collapse." In Solid State Phenomena, 77–82. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908451-56-6.77.

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Fyfe, I. M., and S. R. Choi. "Bifurcation and Void Formation in Dynamically Expanded Rings." In Macro- and Micro-Mechanics of High Velocity Deformation and Fracture, 85–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-82767-9_7.

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Hermans, M. J. M., and M. H. Biglari. "Void Formation by Kirkendall Effect in Solder Joints." In The ELFNET Book on Failure Mechanisms, Testing Methods, and Quality Issues of Lead-Free Solder Interconnects, 105–22. London: Springer London, 2011. http://dx.doi.org/10.1007/978-0-85729-236-0_5.

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Hähner, P., and W. Frank. "A Mesoscopic Theory of Irradiation-Induced Void-Lattice Formation." In Patterns, Defects and Materials Instabilities, 381–82. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0593-1_25.

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Furtado, H. C., and I. Le May. "Creep Damage Assessment and Void Formation in Engineering Materials." In IUTAM Symposium on Creep in Structures, 241–56. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-015-9628-2_24.

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Umemura, Masayuki, and Satoru Ikeuchi. "Formation of a Void and Galaxies in a Neutrino-Dominated Universe." In Third Asian-Pacific Regional Meeting of the International Astronomical Union, 243–45. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4630-9_57.

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Kim, S. J., Y. H. Kim, S. H. Kim, J. H. Kim, J. U. Han, S. J. Byun, and I. Chung. "A Study on Contact Resistance Failure Between Al-Ti-TiN Multi-Layer and W-Via Caused by Hillock Formation." In Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing, 1863–70. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-48764-9_232.

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Conference papers on the topic "Void and hillock formation"

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Takaya, Ryuji, Kazuhiko Sasagawa, Kazuhiro Fujisaki, and Takeshi Moriwaki. "Relationship Between Threshold Current Density of Electromigration Damage Considering Void and Hillock Formation and Reservoir Shape in Interconnect Line." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74092.

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Reservoir structures are often constructed in the interconnection to prevent the electromigration damages. In this study, a numerical simulation technique for analyzing the atomic density distributions in the line under high current density was used to evaluate the effects of reservoir length and location on the threshold current density considering void and hillock generations. The threshold current density is determined when the local atomic density in the line reaches the upper critical value for hillock creation or the lower critical value for void generation. Atomic density distributions in the line were simulated when cathode and anode reservoir lengths were changed. The threshold current density considering void formation became higher with longer cathode reservoir and shorter anode reservoir. However, opposite results obtained in the case of hillock formation. It was found that there was an optimum value of reservoir length, corresponding to both critical values of hillock and void initiation.
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Verbruggen, A. H., M. J. C. van den Homberg, L. C. Jacobs, A. J. Kalkman, J. R. Kraayeveld, and S. Radelaar. "Resistance changes induced by the formation of a single void/hillock during electromigration." In STRESS INDUCED PHENOMENA IN METALLIZATION. ASCE, 1998. http://dx.doi.org/10.1063/1.54635.

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He, Xiaoling, and Clemens Burda. "Thermal Stress Induced Void Formation in Semiconductor Interconnect." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-39513.

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Stress voiding is a common defect of the semiconductor interconnect. In thermal cycles, other defects such as the hillocks, delamination can also occur. For the Cu/low-k interconnect, simulation with Ansys is made to analysis the interconnect stress-strain distribution and deformation. Results indicate that stress induced void is prone to form in the via than in the metal lines. Flower defect appear at the via top can also be analyzed based on the stress distribution. It is found that Von-Mises stress represent the localization of the stress concentration, which cause delamination and over-stress failure at the interface of the different materials.
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Saito, Naoki, Naokazu Murata, Kinji Tamakawa, Ken Suzuki, and Hideo Miura. "Stress-Induced and Electro-Migration of Electroplated Copper Thin Film Interconnections Used for 3D Integration." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52058.

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Electroplated copper thin films have started to be applied to not only interconnections in printed wiring boards, but also thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity and high thermal conductivity. Thus, the electrical reliability of the electroplated copper interconnections was investigated experimentally. Self-made electroplated copper thin film interconnections were used for the evaluation. Electroplating conditions are as follows. The thin film interconnections were made by damascene process for electromigration tests. The applied current density during the test was varied from 1 MA/cm2 to 10 MA/cm2. Abrupt fracture caused by the local fusion was often observed in the as-electroplated interconnections within a few hours during the test. Since there were a lot of porous grain boundaries in the as-electroplated thin films, the local high Joule heating should have caused the fusion at one of the porous grain boundaries. Actually, it was confirmed that the failure rate increased linearly with the square of the amplitude of the applied current density. However, the diffusion of copper atoms caused by electromigration was enhanced significantly when the film was annealed at 400°C. Many voids and hillocks were observed on their surfaces. This change of the fracture mode clearly indicates the improvement of the crystallographic quality of the annealed film. It was also observed that the stress-induced migration was activated substantially in the annealed film. Large voids and hillocks grew during the custody of the film even at room temperature without any application of current. This stress-induced migration was caused by the increase of residual tensile stress of about 200 MPa in the annealed film. It was also found that sulfur atoms segregated in the grown hillocks, though no sulfur atoms were found by EDX in the initial as-electroplated interconnections or other area in the annealed thin film interconnections. Thus, the hillock formation in the annealed interconnections was enhanced by the segregation of sulfur atoms. These sulfur atoms should have been introduced into the electroplated films during electroplating. Therefore, it is very important to control the micro texture, the residual stress and the concentration of sulfur in the electroplated copper thin film interconnections to assure the stable life, in other words, to eliminate their sudden brittle fracture and time-dependent degradation caused by the residual stress in the thin film interconnections.
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Kikuchi, Hiroki, Kazuhiko Sasagawa, and Kazuhiro Fujisaki. "Analysis for Evaluation of Threshold Current Density of Electromigration Damage in Taper-Shaped Metal Line." In ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems collocated with the ASME 2017 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ipack2017-74059.

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Metal lines used in integrated circuits (ICs) become narrow for raising the device performance. Due to scaling down of the ICs, current density and Joule heating are increased, which induces electromigration (EM) damage. EM is transportation phenomena of metallic atoms caused by electron wind under high current density. EM leads to hillock and void formation in the metal line, thus EM should be considered to evaluate the performances of the device safe. It is known that a value of threshold current density which is critical current density of the EM damage exists in via-connected and passivated lines. In this study, the effect of line geometry on the threshold current density is discussed in the case of taper-shaped line. The evaluation method of threshold current density is conducted based on numerical simulation technique with building-up processes of atomic density distribution in the metal line by using a governing parameter of EM damage. As the simulation results, threshold current density increased in the cases of shorter line length, lower temperature, and wider width in cathode side. Furthermore, a new parameter was proposed for simplified evaluation of the threshold current density in taper-shaped lines. The evaluation method is able to apply various line shapes and conditions and it is expected to use for confirmation of the reliability of the lines in circuit design processes.
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Zhang, Yuan Xiang, Lihua Liang, and Yong Liu. "Electromigration modeling with consideration of hillock formation." In Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2010. http://dx.doi.org/10.1109/esime.2010.5464568.

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Ewald, Thomas D., Norbert Holle, and Klaus-Jurgen Wolter. "Void formation during reflow soldering." In 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC). IEEE, 2012. http://dx.doi.org/10.1109/ectc.2012.6249064.

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Jing Cheng, Samuel Chen, Paul Vianco, and James C. M. Li. "A new mechanism for Hillock formation over electrodeposited thin tin film." In 2008 58th Electronic Components and Technology Conference (ECTC 2008). IEEE, 2008. http://dx.doi.org/10.1109/ectc.2008.4550014.

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Koyama, H., Y. Mashiko, and T. Nishioka. "Suppression of Stress Induced Aluminum Void Formation." In 24th International Reliability Physics Symposium. IEEE, 1986. http://dx.doi.org/10.1109/irps.1986.362107.

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Ross, Glenn, Vesa Vuorinen, and Mervi Paulasto-Krockel. "Void formation in Cu-Sn micro-connects." In 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). IEEE, 2015. http://dx.doi.org/10.1109/ectc.2015.7159907.

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Reports on the topic "Void and hillock formation"

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Seferis, James C. Nanoparticle Control of Void Formation and Expansion in Polymeric and Composite Systems. Fort Belvoir, VA: Defense Technical Information Center, February 2007. http://dx.doi.org/10.21236/ada464995.

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Seferis, James C. Nano-Particle Control of Void Formation and Expansion in Polymeric and Composite Systems. Fort Belvoir, VA: Defense Technical Information Center, July 2006. http://dx.doi.org/10.21236/ada452054.

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Seferis, James C. Nano Particle Control of Void Formation and Expansion in Polymeric and Composite Systems. Fort Belvoir, VA: Defense Technical Information Center, May 2009. http://dx.doi.org/10.21236/ada639922.

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