Journal articles: 'Voltage Controlled Negative Resistance(VCNR)'

1

Hossain, M. S., R. Islam, and K. A. Khan. "DC Conduction and Switching Mechanisms in Electroformed Al/ZnTe:V/Cu Devices at Atmospheric Pressure." ISRN Materials Science 2011 (July 7, 2011): 1–6. http://dx.doi.org/10.5402/2011/823237.

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Vanadium-doped zinc telluride (ZnTe:V) thin film sandwiched by two different metal electrodes, that is, Al/ZnTe:V/Cu structure, was deposited onto the glass substrate by e-beam deposition technique in vacuum at a pressure of ~8 × 10−4 Pa. The deposition rate of the film was maintained at 2.052 nms−1. Circulation current was measured through this device as a function of potential difference applied across the structure. The Al/ZnTe:V/Cu structures exhibit memory switching characteristics at atmospheric pressure in room temperature. Switching characteristics of deposited Al/ZnTe:V/Cu structure as a memory device have been investigated in detail for various vanadium compositions, thicknesses of ZnTe:V films as well as various film temperatures, respectively. In all cases, it is seen that the metal/insulator/metal (Al/ZnTe:V/Cu) structures based on ZnTe:V can undergo an electroforming process and exhibit voltage-controlled negative resistance (VCNR) or a new switching process. It is also observed that the electric field, temperature, thickness, and dopant composition have important role in the switching characteristics. Switching characteristics have been interpreted by using a filamentary model. The switching effects of Al/ZnTe:V/Cu device may have important applications in the energy-oriented devices.

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Mourya, Soumya, and Raj Senani. "CMOS Voltage-Controlled Negative Resistance Realization." American Journal of Electrical and Electronic Engineering 8, no. 4 (September 10, 2020): 120–24. http://dx.doi.org/10.12691/ajeee-8-4-4.

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3

Iida, M., T. Kurosu, Y. Akiba, and S. Okazaki. "Voltage controlled negative resistance diode with injection gate." physica status solidi (a) 94, no. 2 (April 16, 1986): 693–700. http://dx.doi.org/10.1002/pssa.2210940234.

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4

Gan, Kwang-Jow, Cher-Shiung Tsai, Yan-Wun Chen, and Wen-Kuan Yeh. "Voltage-controlled multiple-valued logic design using negative differential resistance devices." Solid-State Electronics 54, no. 12 (December 2010): 1637–40. http://dx.doi.org/10.1016/j.sse.2010.08.007.

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Hourdakis, E., A. Kaidatzis, D. Niarchos, and A. G. Nassiopoulou. "Voltage-controlled negative differential resistance in metal-sputtered alumina-Si structures." Journal of Physics D: Applied Physics 52, no. 8 (December 18, 2018): 085101. http://dx.doi.org/10.1088/1361-6463/aaf499.

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Hickmott, T. W. "Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al–Al2O3–Au diodes." Journal of Applied Physics 88, no. 5 (September 2000): 2805–12. http://dx.doi.org/10.1063/1.1287116.

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7

Mei, X. A., M. Chen, R. F. Liu, Y. H. Sun, and J. Liu. "Negative Resistance Behavior of Ferroelectric Bismuth Titanate Ceramics at Low Field." Key Engineering Materials 492 (September 2011): 234–37. http://dx.doi.org/10.4028/www.scientific.net/kem.492.234.

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Ferroelectric Bi4Ti3O12ceramics are fabricated by conventional solid-state reaction process. The current-voltage characteristic of Bi4Ti3O12sample exhibits a voltage-controlled negative differential resistance behavior at low field (E≤100V/mm), and an obvious PTC effect appears at around 100°C on the resistance-temperature curve. Based on conducting filament model about electrical transport, instead of Heywang-Jonker model, the experimental results of Bi4Ti3O12ceramics are suitably explained.

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Hickmott, T. W. "Voltage-controlled negative resistance and electroluminescent spectra of Al–Al2O3–Au diodes." Journal of Applied Physics 106, no. 10 (November 15, 2009): 103719. http://dx.doi.org/10.1063/1.3262619.

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9

Murao, Kenji, and Kazuhiro Suzuki. "Anomalous voltage‐controlled negative resistance in Pt‐insulator‐conductive polymer‐Au junctions." Applied Physics Letters 47, no. 7 (October 1985): 724–25. http://dx.doi.org/10.1063/1.96016.

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Chowdhury, Sauvik, Collin W. Hitchcock, Rajendra P. Dahal, Ishwara B. Bhat, and T. Paul Chow. "Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n Rectifiers." IEEE Transactions on Electron Devices 64, no. 3 (March 2017): 897–900. http://dx.doi.org/10.1109/ted.2016.2633463.

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Supadech, S., S. Okazaki, Y. Akiba, T. Kurosu, and M. Lida. "Voltage-controlled negative resistance in p+-i-n+ planar diodes with injection gate." IEE Proceedings I Solid State and Electron Devices 133, no. 1 (1986): 1. http://dx.doi.org/10.1049/ip-i-1.1986.0001.

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Ulansky, Vladimir, Ahmed Raza, and Hamza Oun. "Electronic Circuit with Controllable Negative Differential Resistance and its Applications." Electronics 8, no. 4 (April 8, 2019): 409. http://dx.doi.org/10.3390/electronics8040409.

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Electronic devices and circuits with negative differential resistance (NDR) are widely used in oscillators, memory devices, frequency multipliers, mixers, etc. Such devices and circuits usually have an N-, S-, or Λ-type current-voltage characteristics. In the known NDR devices and circuits, it is practically impossible to increase the negative resistance without changing the type or the dimensions of transistors. Moreover, some of them have three terminals assuming two power supplies. In this paper, a new NDR circuit that comprises a combination of a field effect transistor (FET) and a simple bipolar junction transistor (BJT) current mirror (CM) with multiple outputs is proposed. A distinctive feature of the proposed circuit is the ability to change the magnitude of the NDR by increasing the number of outputs in the CM. Mathematical expressions are derived to calculate the threshold currents and voltages of the N-type current-voltage characteristics for various types of FET. The calculated current and voltage thresholds are compared with the simulation results. The possible applications of the proposed NDR circuit for designing single-frequency oscillators and voltage-controlled oscillators (VCO) are considered. The designed NDR VCO has a very low level of phase noise and has one of the best values of a standard figure of merit (FOM) among recently published VCOs. The effectiveness of the proposed oscillators is confirmed by the simulation results and the implemented prototype.

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Fuśnik, Łukasz, Bartłomiej Szafraniak, Jerzy Wrona, Susana Cardoso, Paulo P. Freitas, and Piotr Wiśniowski. "Dependence of Sensitivity, Derivative of Transfer Curve and Current on Bias Voltage Magnitude and Polarity in Tunneling Magnetoresistance Sensors." Sensors 23, no. 3 (January 20, 2023): 1214. http://dx.doi.org/10.3390/s23031214.

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The sensitivity of tunneling magnetoresistance sensors is an important performance parameter. It depends on the derivative of resistance versus magnetic field (transfer curve) and the current and is expressed as the product of the two factors. Previous research has demonstrated that the bias voltage has a significant impact on the sensitivity. However, no research has been conducted into the dependence of current and the derivative on bias voltage magnitude and polarity, and their contribution to the sensitivity. Thus, this paper investigates the dependence of sensitivity, derivative of resistance versus magnetic field curve and current on bias voltage magnitude and polarity in CoFeB/MgO/CoFeB-based tunneling magnetoresistance sensors with weak, strong and no voltage-controlled perpendicular magnetic anisotropy modification. It demonstrates that the sensitivity dependence on bias voltage for sensors with voltage controlled magnetic anisotropy modification showed no saturation up to 1 V. Moreover, the sensitivity asymmetry with respect to bias polarity changed significantly with bias, reaching a ratio of 6.7. Importantly, the contribution of current and the derivative of resistance versus magnetic field curve to the sensitivity showed a crossover. The current dominated the bias dependence of sensitivity below the crossover voltage and the derivative above the voltage. Furthermore, the crossover voltage in sensors without voltage controlled magnetic anisotropy modification did not depend on polarity, whereas in sensors with voltage controlled magnetic anisotropy modification, it appeared at significantly higher voltage under positive than negative polarity.

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14

Malki, Ayoub, Larbi El Abdellaoui, Jamal Zbitou, A. Errkik, A. Tajmouati, and Mohamed Latrach. "A Novel Design of Voltage Controlled Oscillator By using the Method of Negative Resistance." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 6 (December 1, 2018): 4496. http://dx.doi.org/10.11591/ijece.v8i6.pp4496-4504.

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<p>The objective of this paper is to develop a new design of a voltage controlled microwave oscillator by using the method of negative resistance in order to fabricate VCO with very good performance in terms of tuning rang, phase noise, output power and stability. The use of hybrid microwave integrated circuit technology’s (HMIC) offers a lot of advantage for our structure concerning size, cost, productivity, and Q factor. This VCO is designed at [480MHz; 1.4GHz] frequency for applications in the phase locked loop (PLL) for signal tracking, FM demodulation, frequency modulation, mobile communication, etc. The different steps of studied voltage controlled oscillator’s design are thoroughly described. Initially designed at a fixed frequency meanwhile the use of a varactor allow us to tune the frequency of the second design. It has been optimized especially regarding tuning bandwidth, power, phase noise, consumption and size of the whole circuit. The achieved results and proposed amendment are the product of theoretical study and predictive simulations with advanced design system microwave design software. A micro-strip VCO with low phase noise based on high gain ultra low noise RF transistor BFP 740 has been designed, fabricated, and characterized. The VCO delivers a sinusoidal signal at the frequency 480 MHz with tuning bandwidth 920 MHz, spectrum power of 12.62 dBm into 50 Ω load and phase noise of -108 dBc/Hz at 100 Hz offset. Measurement results and simulation are in good agreement. Circuit is designed on FR4 substrate which includes integrated resonators and passive components.</p>

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15

Hickmott, T. W. "Temperature dependence of voltage-controlled negative resistance and electroluminescence in Al–Al2O3–Au diodes." Journal of Applied Physics 104, no. 10 (November 15, 2008): 103704. http://dx.doi.org/10.1063/1.3021092.

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16

MATHUR, Koushick, Palaniandavar VENKATESWARAN, and Rabindranath NANDI. "Linear Voltage Controlled Oscillator Implementation in Electronically Variable Immittances." Romanian Journal of Information Science and Technology 2023, no. 1 (March 24, 2023): 65–77. http://dx.doi.org/10.59277/romjist.2023.1.05.

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New realization schemes of electronically tunable inductor (L) and Frequency-Dependent Negative Resistance (D) type immittances using a Current Feedback Amplifier (CFA) and Multiplication Mode Current Conveyor (MMCC) composite active building block (ABB) are proposed. Applications of the immittances to the design of selective filters and LC-type linear voltage controlled quadrature oscillator (LVCQO) are presented. Experimental results based on PSPICE simulation and hardware design for a linear range of oscillation frequency (fo ~ 13.6MHz) with satisfactory phase-noise figure on the oscillator wave response had been verified. Effects of the Active Building Block (ABB)-nodal imperfections are analyzed to be insignificant. The new ideas in this article are two types of immittance functions realizable in the same topology; appropriate frequency-domain selective responses are also presented with experimentation results.

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17

Dong, Cheng Hong, Chang Chun Zhang, Yu Feng Guo, Lei Lei Liu, Xin Cun Ji, and Yi Zhang. "Design of a Low-Phase-Noise LC Voltage Controlled Oscillator." Applied Mechanics and Materials 519-520 (February 2014): 1095–98. http://dx.doi.org/10.4028/www.scientific.net/amm.519-520.1095.

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A novel low phase noise LC Voltage Controlled Oscillator (LC-VCO) is designed in standard 0.18μm CMOS technology. Instead of common NMOS cross-pairs for a conventional complementary LC VCO, both body-biasing and Q-enhancement techniques are employed to provide a larger negative resistance for the VCO. Post-layout simulations showed that it can oscillate at a frequency range of 4.34-4.73GHz, and comsume a supply current of 1.52mA from a supply voltage of 1.8V. The VCO achieves a phase noise of -132.8dBc/Hz @ 1MHz offset and a figure of merit (FOM) of -195.9dBc/Hz at the frequency of 4.5GHz. A die area of 475μm×498.6μm is occupied.

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18

Chaplygin, Yu A., A. I. Galushkov, A. A. Semenov, and D. A. Usanov. "Magnetically controlled two-terminal device with negative differential resistance and N-type current-voltage characteristic." Semiconductors 42, no. 13 (December 2008): 1536–40. http://dx.doi.org/10.1134/s1063782608130186.

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19

FAN, ZHI-QIANG, and KE-QIU CHEN. "THEORETICAL INVESTIGATION OF GATE VOLTAGE CONTROLLABLE TRANSPORT PROPERTIES IN SINGLE C60 MOLECULAR DEVICE." International Journal of Modern Physics B 25, no. 29 (November 20, 2011): 3871–80. http://dx.doi.org/10.1142/s0217979211102034.

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The effect of gate voltage on electronic transport properties in single C60 molecular device is investigated by a first-principles method based on density functional theory and nonequilibrium Green's function formalism. The calculated results show that the variation of the equilibrium conductance with gate voltage strongly corresponds with the variation of transmission eigenvalues and depends on the shift of molecular orbitals. The positive gate voltage can enhance the device's electronic transport, while negative gate voltage weaken it, which shows a gate-controlled molecular current switch. More importantly, the negative differential resistance behavior is observed and can be modulated by the gate potential. A detailed explanations for these phenomena are given.

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20

Hickmott, T. W. "Surface plasmon polariton-assisted electron emission and voltage-controlled negative resistance of Al–Al2O3–Au diodes." Journal of Applied Physics 107, no. 9 (May 2010): 093714. http://dx.doi.org/10.1063/1.3407510.

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21

Yarn, K. F., Y. H. Wang, C. Y. Chang, and C. S. Chang. "Voltage-controlled three terminal GaAs negative differential resistance device using n+-i-p+-i-n+ structure." IEE Proceedings G Circuits, Devices and Systems 137, no. 3 (1990): 219. http://dx.doi.org/10.1049/ip-g-2.1990.0033.

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22

Yu, Wenhao, Luqiu Chen, Yifei Liu, Bobo Tian, Qiuxiang Zhu, and Chungang Duan. "Resistive switching polarity reversal due to ferroelectrically induced phase transition at BiFeO₃/Ca_0.96Ce_0.04MnO₃ heterostructures." Applied Physics Letters 122, no. 2 (January 9, 2023): 022902. http://dx.doi.org/10.1063/5.0132819.

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Ferroelectric resistive switching (RS) devices with functional oxide electrodes allow controlled emergent phenomena at an interface. Here, we demonstrate RS polarity reversal due to ferroelectrically induced phase transition at a doped charge transfer insulator interface. For BiFeO3/Ca0.96Ce0.04MnO3 bilayers grown on a NdAlO3 substrate, by applying voltages to a Ca0.96Ce0.04MnO3 bottom electrode, the resistance changes from a high resistance state (HRS) to a low resistance state (LRS) during a positive voltage cycle (0 → 3 → 0 V), and from a LRS to a HRS during a negative voltage cycle (0 → −3 → 0 V). The RS polarity is completely opposite the expected RS behavior in ferroelectric heterostructures induced by polarization reversal. It is proposed that the unique resistance switching polarity is attributed to the band-filling controlled metal-insulator transition in a Ca0.96Ce0.04MnO3 film, triggered by ferroelectric based electrostatic doping. The results address the importance of ferroelectric field effect on the electronic properties of the interfacial system in ferroelectric/complex oxide-based resistive memory devices.

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23

Zellagui, Mohamed, Heba Ahmed Hassan, and Abdelaziz Chaghi. "Fault Location Effect on Short-Circuit Calculations of a TCVR Compensated Line in Algeria." International Journal of Electrical and Computer Engineering (IJECE) 5, no. 1 (February 1, 2015): 1. http://dx.doi.org/10.11591/ijece.v5i1.pp1-12.

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This research work investigated the effect of fault location on short-circuit calculations for a high voltage transmission line equipped with a novel FACTS device, namely Thyristor Controlled Voltage Regulator (TCVR). This main function of this device was to control the voltage and active power of the line. The paper considered a study case for a 220 kV transmission line, in the Algerian transmission power network, which was subjected to a phase to earth fault in the presence of a fixed fault resistance. The paper presented theoretical analysis of the short-circuit calculations which was confirmed by the illustrated simulation results. Simulation results showed the impact of the fault location on the symmetrical current and voltage components of the line, and transmission line phase currents and voltages; before using TCVR and in the presence of TCVR for both cases of positive and negative TCVR controlled voltage.

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RAMADAN, ASHRAF, ADEL EL-HENNAWY, KAMEL HASSAN, and ALI ABOU EL-NOUR. "Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits." International Journal of Electronics 86, no. 3 (March 1999): 311–19. http://dx.doi.org/10.1080/002072199133454.

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Semyonov, Edward, and Oleg Malakhovskij. "Isothermal measurement of current-voltage characteristics of Gunn diodes with reflection of their discontinuities and hysteresis." ITM Web of Conferences 30 (2019): 11008. http://dx.doi.org/10.1051/itmconf/20193011008.

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Requirements to the measuring setup are formulated, which make it possible obtaining isothermal current-voltage (I-V) characteristics of the Gunn diode with reflection of their discontinuities, region of negative differential resistance, and hysteresis. The influence of the inductance of the test pulses, source on the occurrence of self-excitation in the connecting transmission line is investigated. The maximum permissible values of the inductance of the test signal source are indicated. Operation of the measuring circuit without self-excitation was experimentally achieved in most of the region with negative differential resistance. The isothermal I-V characteristics of the Gunn diode were measured with a controlled systematic error due to the comparing the measurement result with the developed model of the I-V characteristic.

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Slankamenac, Milos, Svetlana Lukic, and Milos Zivanov. "Analysis of electrical switching effects in the chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99." Chemical Industry 63, no. 3 (2009): 183–87. http://dx.doi.org/10.2298/hemind0903183s.

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The current-voltage characteristics of the bulk metal chalcogenide glassy semiconductor Cu1(AsSe1.4I0.2)99 are obtained by Tektronix 576 Curve Tracer. It was found that this glass has current-controlled negative resistance (CCNR) and switching characteristic with memory. Experimental results have shown a strong decrease in electrical resistivity and threshold voltage due to the presence of the metallic element copper and change of ambient temperature. Also, photomicrographs of the sample surface are presented and the impact of electrical switching on forming crystalline conductive channels on the surface of the investigated amorphous semiconductor is discussed.

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27

Ulansky, Vladimir, Ahmed Raza, and Denys Milke. "Two-Terminal Electronic Circuits with Controllable Linear NDR Region and Their Applications." Applied Sciences 11, no. 21 (October 20, 2021): 9815. http://dx.doi.org/10.3390/app11219815.

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Negative differential resistance (NDR) is inherent in many electronic devices, in which, over a specific voltage range, the current decreases with increasing voltage. Semiconductor structures with NDR have several unique properties that stimulate the search for technological and circuitry solutions in developing new semiconductor devices and circuits experiencing NDR features. This study considers two-terminal NDR electronic circuits based on multiple-output current mirrors, such as cascode, Wilson, and improved Wilson, combined with a field-effect transistor. The undoubted advantages of the proposed electronic circuits are the linearity of the current-voltage characteristics in the NDR region and the ability to regulate the value of negative resistance by changing the number of mirrored current sources. We derive equations for each proposed circuit to calculate the NDR region’s total current and differential resistance. We consider applications of NDR circuits for designing microwave single frequency oscillators and voltage-controlled oscillators. The problem of choosing the optimal oscillator topology is examined. We show that the designed oscillators based on NDR circuits with Wilson and improved Wilson multiple-output current mirrors have high efficiency and extremely low phase noise. For a single frequency oscillator consuming 33.9 mW, the phase noise is −154.6 dBc/Hz at a 100 kHz offset from a 1.310 GHz carrier. The resulting figure of merit is −221.6 dBc/Hz. The implemented oscillator prototype confirms the theoretical achievements.

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He, Li, Xiaoning Zhang, Wenjiang Wang, and Xiaoning Zhao. "Improvement of the voltage-controlled negative resistance of a porous silicon emitter using cathode reduction and electro-pretreatment." Journal of Physics D: Applied Physics 49, no. 34 (July 27, 2016): 345101. http://dx.doi.org/10.1088/0022-3727/49/34/345101.

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29

Kulapong, Worawut, Winai Jaikla, Surapong Siripongdee, Roman Sotner, Peerawut Suwanjan, and Amornchai Chaichana. "A New Method to Synthesise the Sinusoidal Oscillator Based on Series Negative Resistance-Capacitance and its Implementation Using a Single Commercial IC, LT1228." Elektronika ir Elektrotechnika 29, no. 3 (June 27, 2023): 26–32. http://dx.doi.org/10.5755/j02.eie.33844.

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An alternative method for synthesising the sinusoidal oscillator based on series negative resistance-capacitance is presented in this paper. The proposed topology is constructed with the series negative resistance-capacitance circuit connected in parallel with a grounded resistor and capacitor. To validate the proposed method, a new grounded series negative resistance-capacitance simulator is also proposed as a subcircuit for synthesising the sinusoidal oscillator. The series negative resistance-capacitance simulator is based on a commercially available integrated circuit (IC), LT1228. The equivalent negative resistance and equivalent negative capacitance can be adjusted electronically using an external DC bias current. The sinusoidal oscillator that is synthesised using the proposed method consists of a single LT1228, two capacitors, and three resistors. The frequency and the condition of the oscillation are orthogonally adjusted. Also, the condition of oscillation is electronically controlled. The amplitude of the sinusoidal waveform is adjustable. In addition, the output voltage node of the proposed oscillator has a low impedance, which allows it to connect to other circuits without using an additional buffer. Both PSPICE simulation and experiment are used to validate the proposed circuits.

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Ryu, Hojeong, Junhyeok Choi, and Sungjun Kim. "Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM." Metals 10, no. 11 (October 23, 2020): 1410. http://dx.doi.org/10.3390/met10111410.

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In this work, the synaptic plasticity from complementary resistive switching in a HfAlOx-based resistive memory device was emulated by a direct current (DC) voltage sweep, current sweep, and pulse transient. The alloyed HfAlOx dielectric was confirmed by X-ray photoelectron spectroscopy analysis. The negative differential resistance observed before the forming and set processes can be used for interface resistive switching with a low current level. Complementary resistive switching is obtained after the forming process at a negative bias. This unique resistive switching is also suitable for synaptic device applications in which the reset process occurs after an additional set process. The current sweep mode provides more clear information on the complementary resistive switching. Multiple current states are achieved by controlling the amplitude of the set and reset voltages under DC sweep mode. The potentiation and depression characteristics are mimicked by varying the pulse voltage amplitude for synaptic device application in a neuromorphic system. Finally, we demonstrate spike-timing-dependent plasticity by tuning the timing differences between pre-spikes and post-spikes.

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Hudgings, Janice A., Robert J. Stone, Sui F. Lim, Gabriel S. Li, Wupen Yuen, Kam Y. Lau, and Connie J. Chang-Hasnain. "The physics of negative differential resistance of an intracavity voltage-controlled absorber in a vertical-cavity surface-emitting laser." Applied Physics Letters 73, no. 13 (September 28, 1998): 1796–98. http://dx.doi.org/10.1063/1.122285.

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32

Smirnova, Elena Yu, and Andrey A. Anosov. "Bilayer Lipid Membrane as Memcapacitance: Capacitance–Voltage Pinched Hysteresis and Negative Insertion Conductance." Membranes 13, no. 1 (January 11, 2023): 97. http://dx.doi.org/10.3390/membranes13010097.

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Inelastic (dissipative) effects of different natures in lipid bilayer membranes can lead to hysteresis phenomena. Early, it was shown that lipid bilayer membranes, under the action of a periodic sinusoidal voltage, demonstrate pinched-hysteresis loops in the experimental capacitance–voltage dependences and are almost the only example of the physical implementation of memcapacitance. Here, we propose an equivalent circuit and mathematical framework for analyzing the dynamic nonlinear current response of a lipid bilayer membrane as an externally controlled memcapacitance. Solving a nonlinear differential equation for the equivalent circuit of a membrane in the form of a parallel connection of a nonlinear viscoelastic capacitor and an active resistance using the small parameter method, we obtain explicit analytical dependences for the current response of the membrane and pinched-hysteresis loops. The explicit solutions and their comparison with experimental data allow us to identify the lumped equivalent circuit parameters that govern the memcapacitor behavior of the membrane and hence the magnitude of the hysteresis. We quantify the memcapacitance hysteresis in terms of negative work done by the control signal. An analysis of the formulas leads to the conclusion that the determining factor for the appearance of pinched hysteresis is the type of nonlinear dependence of the device capacitance on voltage.

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Yurov, A. A., D. E. Storozhenko, A. V. Lukonin, and D. N. Kuimov. "The device for monitoring the insulation breakdown zone of power cable lines in distribution networks with isolated neutral system during high-voltage diagnostic." E3S Web of Conferences 411 (2023): 01049. http://dx.doi.org/10.1051/e3sconf/202341101049.

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The article considers an electrical device designed for diagnostic work in distribution networks of 6-10 kV, namely, the determination of damage zones in case of failure of insulating materials of cable lines during high-voltage diagnostics with a rectified voltage of negative polarity. The novelty of the developed device is its ability to connect directly to a high-voltage cable line without additional matching devices. The device is capable of detecting damage zones in lines up to 10 km remotely with an error of up to 0.2% of the cable length. The prefix allows you to fix any variants of damage to single-phase and three-phase cable lines with high transient resistance at the site of damage without the operation of “burning” insulation, which significantly reduces the time of repair work at the controlled facility.

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Okazaki, Shyohei, Tateki Kurosu, Yukio Akiba, Ilyong Choe, and Masamori Iida. "Multi-Current Peaks for a Voltage-Controlled Negative Resistance in Si p+-i-n+Diodes with a Hole Injecting Gate." Japanese Journal of Applied Physics 25, Part 1, No. 8 (August 20, 1986): 1227–31. http://dx.doi.org/10.1143/jjap.25.1227.

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Ma, Laina, Hideki Kimura, Yukio Akiba, Tateki Kurosu, and Masamori Iida. "Anomalous Photoinduced Change in Threshold Voltage of Current-Controlled Negative Resistance in Si p-i-n Diodes Doped with Gold." Japanese Journal of Applied Physics 35, Part 1, No. 11 (November 15, 1996): 5682–83. http://dx.doi.org/10.1143/jjap.35.5682.

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Liu, Lianxi, Jiangwei Cheng, Junchao Mu, Chaojin Huang, and Zhangming Zhu. "A Self-Powered P-SSHI Interface Circuit with Adaptive On-Resistance Active Diode for PEH." Journal of Circuits, Systems and Computers 28, no. 09 (August 2019): 1950155. http://dx.doi.org/10.1142/s021812661950155x.

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This paper presents a two-stage synchronous rectifier interface circuit for piezoelectric energy harvesting (PEH) system. The proposed rectifier includes a first-stage negative voltage converter, a second-stage adaptive on-resistance active diode, and combines a precise switch-on-time controlled P-SSHI circuit. The traditional active two-stage synchronous rectifier has lower current detection accuracy and hardly achieves high efficiency rectification over a wide input current range. An adaptive on-resistance active diode (AOR active diode) is proposed to replace the traditional active diode to achieve higher current zero-crossing detection accuracy, improve the input current range and the output power of the rectifier. The proposed diode allows the rectifier to maintain high rectification efficiency over a wider input current range. Further, a parallel synchronized switch harvesting on inductor (P-SSHI) with precise switch-on-time controlled circuit is proposed to achieve higher voltage flipping efficiency and improve the power extraction capability of the rectifier. By using the AOR active diode and the P-SSHI with precise switch-on-time controlled circuit, a good performance improvement has been achieved for the proposed interface circuit. The design is fabricated in an SMIC 0.35[Formula: see text][Formula: see text]m standard CMOS technology with a die size of [Formula: see text][Formula: see text]mm2. The simulation results indicate that the proposed circuit achieves more than 80% power converting efficiency and its peak efficiency is 85%. The current zero-crossing detection accuracy of the proposed AOR active diode is less than 10[Formula: see text][Formula: see text]A. The proposed PEH interface circuit extracts up to 2.81 times more output power compared with a traditional rectifier. The voltage flipping efficiency of the P-SSHI circuit is up to 90%, which can effectively improve the power extraction capability of the rectifier. Moreover, the proposed circuit can be self-powered and cold started up.

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37

Ahmed, Wrida, Lotfi Chouiref, Hassen Dahman, Lassaad El Mir, and Henrique L. Gomes. "Negative Differential Resistance and Long-Lived Changes in the Electrical Conductivity of Carbon Composites Induced by Electrothermal Effects." Applied Sciences 13, no. 2 (January 13, 2023): 1069. http://dx.doi.org/10.3390/app13021069.

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In this study, the negative differential resistance (NDR) phenomenon in two-terminal devices composed of pyrogallol-formaldehyde/ZrO2 composite materials is investigated. It is demonstrated that the NDR is caused by electrothermal effects, which can be observed through the dependence of the NDR on both voltage and temperature. Additionally, it is showed that the NDR peak current and peak/valley voltages can be effectively modulated using electrical pulses that produce mild Joule heating. This modulation arises from the formation of a conductive metastable state, which decays to equilibrium according to power law kinetics. It is suggested that this metastable state is generated through a reversible structural rearrangement induced by heat. The ability to electronically tune the NDR characteristics of carbon composites may have potential applications in electronically controlled oscillators and neuromorphic circuits.

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38

Xu, Yunyang, Heng Nian, Yangming Wang, and Dan Sun. "Impedance Modeling and Stability Analysis of VSG Controlled Grid-Connected Converters with Cascaded Inner Control Loop." Energies 13, no. 19 (October 1, 2020): 5114. http://dx.doi.org/10.3390/en13195114.

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This paper develops the impedance models of grid-connected converters under the virtual synchronous generator (VSG) strategy with a cascaded inner control loop and analyzes the system stability of VSG controlled converters with different kinds of weak grid. Different from existing small-signal models with high dimensions, a single-in-single-out (SISO) impedance model with simple mathematical expression is obtained in this paper, which is applied to identify the influence of the cascaded control loop on impedance characteristics and system stability. It is found that the impedance characteristics of VSG controlled converters can become capacitive below the fundamental frequency, and it is mainly caused by the voltage controller in the cascaded control loop of the VSG strategy. Impedance-based stability analysis shows that the capacitive impedance characteristics can benefit the compatibility of converters operated with the series-compensated weak grid, but may deteriorate the system stability with the inductive weak grid, which can be avoided by increasing the proportional coefficients of the cascaded voltage and current controllers or applying a larger virtual resistor to reduce the negative resistance in the capacitive frequency range. Experiments based on the control-hardware-in-loop (CHIL) platform were carried out to verify the developed analytical models and possible system instable cases.

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Colaiuda, Davide, Alfiero Leoni, Giuseppe Ferri, and Vincenzo Stornelli. "A Second Order 1.8–1.9 GHz Tunable Active Band-Pass Filter with Improved Noise Performances." Electronics 11, no. 17 (September 3, 2022): 2781. http://dx.doi.org/10.3390/electronics11172781.

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In this paper, a novel active tunable band-pass filter with improved noise performances is presented. This filter is based on a negative resistance circuit (or active capacitance), where the gain obtained with a transistor is used to compensate for inductor losses. Moreover, the capacitance of the resonator is obtained through a voltage-controlled reverse-biased varactor, which allows for frequency tuning. Despite the active component, the proposed filter also has good noise performance. Measurements show a tunability range from 1.816 GHz to 1.886 GHz, with a bandwidth of 38 MHz. The insertion loss maximum value is 0.4 dB, while the noise figure value has a minimum value of 2.5 dB at the center frequency within the tunability range.

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40

Mohsin, Dhurgham, Haider Lieth, and Murtadha Jabbar. "Effect of Hexagonal Boron Nitride Nanoparticles Additions on Corrosion Resistance for Zinc Coatings of Weathering Steel in Rainwater." Basrah journal for engineering science 23, no. 1 (July 2, 2023): 64–71. http://dx.doi.org/10.33971/bjes.23.1.9.

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Zinc and its alloy coatings are commonly used to provide cathodic protection for weathering steel. However, the steel substrate corrodes faster than the Zinc coating because of the coating's negative corrosion potential. Many studies have examined Zinc and alloy coatings' resistance to corrosion. Hot-dip galvanizing, Electrodeposition, and Zinc-rich coat (ZRC) spray are just some of the methods that can be used to deposit such coatings. Commercially available 99.95 % pure Zinc oxide was used in the electroplating process in this investigation. Steel samples were plated in Zinc sulphate and Zinc oxide solutions and were controlled by different bath parameters such as voltage, current, pH, temperature, and coating time. The addition of hexagonal Boron Nitride (h-BN) nanoparticles has also shown significant improvements in corrosion resistance. However, Zinc-based coating techniques reinforced with h-BN incorporation show the best corrosion current density (Icorr) of Hot dip 2 % wt. (2.1 μA/cm2), ZRC 2.5 % wt., (4.4 μA/cm2), and electroplating 15.75 g/L (0.081 μA/cm2), which is an order of magnitude lower than coatings without h-BNs. The corrosion rates and current densities of Zn/h-BN coated layers were investigated in a controlled laboratory environment that mimicked natural conditions (Rainwater solution) by extrapolating polarization curves.

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41

Deylamani, Mahnaz Janipoor, Fatemeh Abdi, and Parviz Amiri. "A Full-Wave CMOS Rectifier with High-Speed Comparators for Implantable Medical Devices." Journal of Circuits, Systems and Computers 28, no. 11 (October 2019): 1950178. http://dx.doi.org/10.1142/s0218126619501780.

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In this paper, we present a CMOS full-wave rectifier with comparator-controlled switches for transmission of wireless power in implantable medical devices. It uses MOS transistors as low loss switches to provide high power conversion efficiency (PCE). The proposed fast comparator circuit, by controlling the switches in the rectifier, reduces the reverse leakage current in the negative cycle and increases the conduction time in the positive cycle so that more current flows into the output load and optimizes the rectifier power efficiency. The designed comparator does not require constant voltage source for its function and it is self-biased. The proposed rectifier is implemented using 0.18[Formula: see text][Formula: see text]m CMOS technology and provides 1.195[Formula: see text]V output DC voltage with a 190[Formula: see text][Formula: see text] load resistance and AC input signal with the frequency of 13.56[Formula: see text]MHz and peak-to-peak amplitude of 1.36[Formula: see text]V. Under these conditions, PCE and voltage conversion efficiency (VCE) values are 85.5% and 88%, respectively. The peak PCE and VCE increase with a decrease in operation frequency and dimensions of transistors are optimized using multiple simulations for intended frequency.

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Sundaresan, Siddarth, and Ranbir Singh. "Breakthrough performance, reliability and robustness of SiC Junction Transistors." MRS Advances 1, no. 54 (2016): 3619–30. http://dx.doi.org/10.1557/adv.2016.418.

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ABSTRACT Despite having an npn epitaxial structure resembling a Si BJT, the switching performance of the SiC Junction Transistor or SJT is purely controlled by its terminal capacitances, similar to a SiC MOSFET or JFET. Further, the absence of a “high-resistance” SiC MOS channel in the SJT means that the SJT’s RON,sp is solely limited by the resistance of the n- drift region. Recently released SJTs feature RON,sp as low as 2 mΩ-cm2 for a breakdown voltage (BV) of 1600 V, and a RON,sp of 2.4 mΩ-cm2, for a breakdown voltage of 2000 V. Current gains > 100 are achieved, even on the highest current SJTs. Unlike Si BJTs, SJTs do not suffer from second breakdown, and can perform under unclamped inductive switching (UIS) conditions, even at full rated collector currents. Near-∞ Early voltage and a negative temperature co-efficient of current gain in a SJT ensure low collector currents under short-circuited load conditions, resulting in short-circuit withstand time as high as 14 µs, even at > 80% of the maximum rated BV. Recent technological developments have significantly improved the stability of the SJT current gain (β) under high-current stress conditions. A 1000-hour long, 200 A/cm2 DC current stress results in only 10% reduction of the current gain (β) during the early stages of the stress test, while the β is perfectly stable for the remainder (>90%) of the stress duration. Similar β compression is observed, whether the collector current stress is applied at DC, or at a high switching frequency ≥ 200 kHz.

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del Pino Suárez, Francisco Javier, and Sunil Lalchand Khemchandani. "A New Current-Shaping Technique Based on a Feedback Injection Mechanism to Reduce VCO Phase Noise." Sensors 21, no. 19 (October 1, 2021): 6583. http://dx.doi.org/10.3390/s21196583.

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Inductor-capacitor voltage controlled oscillators (LC-VCOs) are the most common type of oscillator used in sensors systems, such as transceivers for wireless sensor networks (WSNs), VCO-based reading circuits, VCO-based radar sensors, etc. This work presents a technique to reduce the LC-VCOs phase noise using a new current-shaping method based on a feedback injection mechanism with only two additional transistors. This technique consists of keeping the negative resistance seen from LC tank constant throughout the oscillation cycle, achieving a significant phase noise reduction with a very low area increase. To test this method an LC-VCO was designed, fabricated and measured on a wafer using 90 nm CMOS technology with 1.2 V supply voltage. The oscillator outputs were buffered using source followers to provide additional isolation from load variations and to boost the output power. The tank was tuned to 1.8 GHz, comprising two 1.15 nH with 1.5 turns inductors with a quality factor (Q) of 14, a 3.27 pF metal-oxide-metal capacitor, and two varactors. The measured phase noise was −112 dBc/Hz at 1 MHz offset. Including the pads, the chip area is 750 × 850 μm2.

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Jiang, Yuan, Yanju Ji, Yibing Yu, Shipeng Wang, and Yuan Wang. "Double Trapezoidal Wave Transmitting System with Controllable Turn-Off Edge." Applied Sciences 10, no. 21 (November 9, 2020): 7932. http://dx.doi.org/10.3390/app10217932.

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For time domain transient electromagnetic measurement, the negative sign often appears in the polarization region, which contains the induced polarization information. It is considered that the polarization effect is caused by the capacitance charge of the earth. Extending the turn-off time of the emission current means increasing the charging time, and reducing the charging voltage, which makes the polarization effect easier to observe. Therefore, a double trapezoidal wave transmitting system with a controllable turn-off edge is designed in this paper. In the process of current transmitting, the turn-off time can be controlled by changing the clamping voltage depending on the passive clamping technology. By cutting into the absorption resistance, the current oscillation can be eliminated under the condition of ensuring linearity. To verify the effectiveness of the system, we designed a polarized wire loop based on the filament model simulating the polarized earth. Comparing the response of the wire loop, the emission current with short and long turn-off times contributes to inducing the induction and polarization fields respectively. The double trapezoidal wave transmitting system with a controllable turn-off edge is suitable for measuring the induced polarization effect.

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45

Yang, Yang, Liping Ma, and Jianhua Wu. "Organic Thin-Film Memory." MRS Bulletin 29, no. 11 (November 2004): 833–37. http://dx.doi.org/10.1557/mrs2004.237.

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AbstractRecently, organic nonvolatile memory devices have attracted considerable attention due to their low cost and high performance. This article reviews recent developments in organic nonvolatile memory and describes in detail an organic electrical bistable device (OBD) that has potential for applications. The OBD consists of a tri-layer of organics/metal nanoclusters/organics sandwiched between top and bottom electrodes. A sufficiently high applied bias causes the metal nanoparticle layer to become polarized, resulting in charge storage near the two metal/organic interfaces. This stored charge lowers the resistance of the device and leads to an electrical switching behavior. The ON and OFF states of an OBD differ in their conductivity by several orders of magnitude and show remarkable bistability—once either state is reached, the device tends to remain in that state for a prolonged period of time. More important, the conductivity states of an OBD can be precisely controlled by the application of a positive voltage pulse (to write) or a negative voltage pulse (to erase). Device performance tests show that the OBD is a promising candidate for high-density, low-cost electrically addressable data storage applications.

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46

Madona, Era, Anton Anton, and Dolla Dolla. "Rancang Bangun Timbangan Beras Digital Dengan Tampilan Berat Dan Harga Menggunakan Output Suara." Elektron : Jurnal Ilmiah 10, no. 1 (June 27, 2018): 13–17. http://dx.doi.org/10.30630/eji.10.1.87.

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Generally, scales on the market still use manual models which often produce a measurement with the inappropriate result because of the accuracy problem or still have trouble with the level of precision. Furthermore, other measuring instruments are also only pendulum balances or analog scales whose output measurement results are only indicated by the pointer. The results of reading each person have different measurement results. In addition to requiring energy and a long time, the manual weighing process also has a negative impact that can harm consumers where the trader in the market usually cheats in trading. To address this problem, a digital rice weighing device is designed that is controlled by Arduino Uno by using a load cell sensor that having a capacity of 10kg (1/2 - 2.5 liters) which provides a change of resistance when there is a pressure. Changes in resistance can change the output voltage of a load cell. The voltage change that is too small so it is amplified using the HX711 and will convert it to digital in units of weight per liter. The level heavy of rice is calculated at prices corresponding to rice selected through pushbutton. The calculation results are displayed on the LCD if the rice is not enough 1 liter so the price and weight will not be displayed on the LCD. The output sound of Mini Df will mention the price based on the type of rice.

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Abo-Hamad, Ghada M., Doaa Khalil Ibrahim, Essam Aboul Zahab, and Ahmed F. Zobaa. "Adaptive Mho Distance Protection for Interconnected Transmission Lines Compensated with Thyristor Controlled Series Capacitor." Energies 14, no. 9 (April 26, 2021): 2477. http://dx.doi.org/10.3390/en14092477.

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This paper proposes an adaptive dynamic Mho distance relay based on a phase comparator scheme for protecting interconnected transmission networks compensated with a Thyristor Controlled Series Capacitor (TCSC). The proposed relay uses an impedance index factor to initiate the fault detection subroutine. The RMS of the positive sequence current of the faulted loop and the TCSC terminal current are compared for TCSC zone identification. A phase comparator for ground and phase distance elements is proposed, relying on the positive sequence voltage as a polarized memory quantity, while the operating and polarizing quantities are developed using estimated TCSC impedance to mitigate its negative impact. The proposed scheme is easy in implementation and independent on synchronized data transfer, as minimum communication requirements are needed. To evaluate the performance of the proposed scheme, extensive simulation studies were carried out on an IEEE9 bus system compensated with TCSC for different firing angles covering four modes of TCSC operations, different fault types, and fault locations. In addition, an IEEE-39 bus network, as a large interconnected system, is tested for validation purposes. The achieved results designate the precision of the proposed scheme. Moreover, the results indicate its effectiveness for fault resistance tolerance, close-in three phase faults, and stable power swing phenomenon compared with conventional relays.

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48

Yang, Jian Hong, Lin Jiao Zhang, and Fei Hu Zhao. "The Characteristics of ESD Protection Device Based on Static Induction Thyristors." Applied Mechanics and Materials 303-306 (February 2013): 1803–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1803.

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A novel structure of ESD protection device based on the static induction thyristors (SITh) was in further investigation. Detailed analysis of the negative resistance characteristics of SITh was presented, especially its blocking and conducting states that satisfy the requirements in ESD events. The characteristics of SITh for ESD protection were obtained using the Time Domain Reflectometer (TDR) type of Transmission Line Pulse (TLP) testing system. The results illustrate that SITh for ESD protection has the following advantages: 1) It has a strong ESD stress handing capability (3.75 kV); 2) Its second breakdown current is large enough (2.5 A) to release great ESD current; 3) DC leakage current of SITh is very small (1 μA); 4) SITh can break through the limitations of transitional trigger voltages, whose trigger voltage is dynamically adjustable as well; 5) The ESD response time can be controlled through optimizing device structure of SITh.

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Walke, Pundalik D., Abu ul Hassan Sarwar Rana, Shavkat U. Yuldashev, Verjesh Kumar Magotra, Dong Jin Lee, Shovkat Abdullaev, Tae Won Kang, and Hee Chang Jeon. "Memristive Devices from CuO Nanoparticles." Nanomaterials 10, no. 9 (August 26, 2020): 1677. http://dx.doi.org/10.3390/nano10091677.

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Memristive systems can provide a novel strategy to conquer the von Neumann bottleneck by evaluating information where data are located in situ. To meet the rising of artificial neural network (ANN) demand, the implementation of memristor arrays capable of performing matrix multiplication requires highly reproducible devices with low variability and high reliability. Hence, we present an Ag/CuO/SiO2/p-Si heterostructure device that exhibits both resistive switching (RS) and negative differential resistance (NDR). The memristor device was fabricated on p-Si and Indium Tin Oxide (ITO) substrates via cost-effective ultra-spray pyrolysis (USP) method. The quality of CuO nanoparticles was recognized by studying Raman spectroscopy. The topology information was obtained by scanning electron microscopy. The resistive switching and negative differential resistance were measured from current–voltage characteristics. The results were then compared with the Ag/CuO/ITO device to understand the role of native oxide. The interface barrier and traps associated with the defects in the native silicon oxide limited the current in the negative cycle. The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole–Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the application of RS along with NDR.

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Shafi, Muhammad Aamir, Muneeb Khan, Sumayya Bibi, Muhammad Yasir Shafi, Noreena Rabbani, Hanif Ullah, Laiq Khan, and Bernabe Mari. "Effect of Parasitic Parameters and Environmental Conditions on I-V and P-V Characteristics of 1D5P Model Solar PV Cell Using LTSPICE-IV." 2, no. 2 (June 2, 2022): 64–74. http://dx.doi.org/10.26565/2312-4334-2022-2-07.

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In this research work, the electrical simulation of 1D5P model solar cell is done using LTSpice-IV simulation software. In this work effect of environmental conditions i.e temperature, solar irradiance, and parasitic parameters i.e series as well as shunt resistances was carried out. It has been discovered that as temperature increases the performance of solar cell decrease because temperature causes to increase the recombination phenomenon and hence lower the performance. However, when the temperature rises from 00C to 500C, the I-V and P-V curves move to the origin showing the negative effect of increasing temperature on the solar cell. Solar irradiance has major role on the performance of solar cell. As solar irradiance increases from 250 Wm-2 to 1000 Wm-2, the performance of solar cell increases accordingly and I-V as well as P-V curve moves away from the origin. It is concluded that for different series resistances, I-V along with P-V characteristic of 1D5P model solar cell varies, as at 0.02Ω series resistance, a maximum short circuit current and maximum power is obtained. But when series resistance increased up 2 ohm only, the I-V and P-V curves moves to origin drastically. Shunt Resistance is the path of reverse current of the cell. As the shunt resistance increases, the path for reverse current decreased, hence all current goes to load, hence maximum power is obtained. Similarly when the value of shunt resistance decreased, the voltage-controlled section of I-V characteristics curve is moved closer to the origin hence reduced the solar cell performance. It's critical to understand how different factors affect the I-V and P-V characteristics curves of solar cells. The open circuit voltage, short circuit current and maximum power is all variable. The influence of these factors may be extremely beneficial when tracking highest power point of a solar cell applying various methods.

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Journal articles on the topic 'Voltage Controlled Negative Resistance(VCNR)'

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