Log in

Relevant bibliographies by topics / Vrram

Contents

Journal articles

Academic literature on the topic 'Vrram'

Author: Grafiati

Published: 19 July 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Vrram.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Vrram"

1

Sun, Wookyung, Sujin Choi, Bokyung Kim, and Hyungsoon Shin. "Effect of Initial Synaptic State on Pattern Classification Accuracy of 3D Vertical Resistive Random Access Memory (VRRAM) Synapses." Journal of Nanoscience and Nanotechnology 20, no. 8 (2020): 4730–34. http://dx.doi.org/10.1166/jnn.2020.17798.

Full text

Abstract:

Amidst the considerable attention artificial intelligence (AI) has attracted in recent years, a neuromorphic chip that mimics the biological neuron has emerged as a promising technology. Memristor or Resistive random-access memory (RRAM) is widely used to implement a synaptic device. Recently, 3D vertical RRAM (VRRAM) has become a promising candidate to reducing resistive memory bit cost. This study investigates the operation principle of synapse in 3D VRRAM architecture. In these devices, the classification response current through a vertical pillar is set by applying a training algorithm to

APA, Harvard, Vancouver, ISO, and other styles

2

Chen, Zhisheng, Renjun Song, Qiang Huo, et al. "Analysis of Leakage Current of HfO2/TaOx-Based 3-D Vertical Resistive Random Access Memory Array." Micromachines 12, no. 6 (2021): 614. http://dx.doi.org/10.3390/mi12060614.

Full text

Abstract:

Three-dimensional vertical resistive random access memory (VRRAM) is proposed as a promising candidate for increasing resistive memory storage density, but the performance evaluation mechanism of 3-D VRRAM arrays is still not mature enough. The previous approach to evaluating the performance of 3-D VRRAM was based on the write and read margin. However, the leakage current (LC) of the 3-D VRRAM array is a concern as well. Excess leakage currents not only reduce the read/write tolerance and liability of the memory cell but also increase the power consumption of the entire array. In this article,

APA, Harvard, Vancouver, ISO, and other styles

3

Sun, Wookyung, Sujin Choi, Bokyung Kim, and Junhee Park. "Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems." Materials 12, no. 20 (2019): 3451. http://dx.doi.org/10.3390/ma12203451.

Full text

Abstract:

Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the size of the array is proportional to the neural network’s depth and the number of its input and output nodes. This means that a 2D crossbar array is not suitable for a deep neural network. On the other hand, synapses that use a memristor with a 3D structure are suitable for implementing a neuromorphic chip for a multi-layered neural network. In this

APA, Harvard, Vancouver, ISO, and other styles

4

Alimkhanuly, Batyrbek, Sanghoek Kim, Lok-won Kim, and Seunghyun Lee. "Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode." Nanomaterials 10, no. 9 (2020): 1634. http://dx.doi.org/10.3390/nano10091634.

Full text

Abstract:

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in simple cross-point arrays. For this reason, a cost-effective 3D vertical RRAM (VRRAM) structure which requires a single pivotal lithography step is attracting significant attention from both the scientific community and the industry. Integrating an extremely thin plane electrode to such a structure is

APA, Harvard, Vancouver, ISO, and other styles

5

Choi, Sujin, Wookyung Sun, and Hyungsoon Shin. "Analysis of Read Margin and Write Power Consumption of a 3-D Vertical RRAM (VRRAM) Crossbar Array." IEEE Journal of the Electron Devices Society 6 (2018): 1192–96. http://dx.doi.org/10.1109/jeds.2018.2873016.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Wu, Min‐Ci, Yi‐Hsin Ting, Jui‐Yuan Chen, and Wen‐Wei Wu. "Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays." Advanced Science 6, no. 24 (2019): 1902363. http://dx.doi.org/10.1002/advs.201902363.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Choi, Sujin, Wookyung Sun, and Hyungsoon Shin. "Analysis of Cell Variability Impact on a 3-D Vertical RRAM (VRRAM) Crossbar Array Using a Modified Lumping Method." IEEE Transactions on Electron Devices 66, no. 1 (2019): 759–65. http://dx.doi.org/10.1109/ted.2018.2878440.

Full text

APA, Harvard, Vancouver, ISO, and other styles

8

Yu, Jie, Woyu Zhang, Danian Dong, et al. "Long-Term Accuracy Enhancement of Binary Neural Networks Based on Optimized Three-Dimensional Memristor Array." Micromachines 13, no. 2 (2022): 308. http://dx.doi.org/10.3390/mi13020308.

Full text

Abstract:

In embedded neuromorphic Internet of Things (IoT) systems, it is critical to improve the efficiency of neural network (NN) edge devices in inferring a pretrained NN. Meanwhile, in the paradigm of edge computing, device integration, data retention characteristics and power consumption are particularly important. In this paper, the self-selected device (SSD), which is the base cell for building the densest three-dimensional (3D) architecture, is used to store non-volatile weights in binary neural networks (BNN) for embedded NN applications. Considering that the prevailing issues in written data

APA, Harvard, Vancouver, ISO, and other styles

9

Lo, Shih-Che, and Hung-Hsu Tsai. "Design of 3D Virtual Reality in the Metaverse for Environmental Conservation Education Based on Cognitive Theory." Sensors 22, no. 21 (2022): 8329. http://dx.doi.org/10.3390/s22218329.

Full text

Abstract:

Background: Climate change causes devastating impacts with extreme weather conditions, such as flooding, polar ice caps melting, sea level rise, and droughts. Environmental conservation education is an important and ongoing project nowadays for all governments in the world. In this paper, a novel 3D virtual reality architecture in the metaverse (VRAM) is proposed to foster water resources education using modern information technology. Methods: A quasi-experimental study was performed to observe a comparison between learning involving VRAM and learning without VRAM. The 3D VRAM multimedia conte

APA, Harvard, Vancouver, ISO, and other styles

10

Chaudhry, Arif, Jeremie D. Oliver, Krishna S. Vyas, et al. "Comparison of Outcomes in Oncoplastic Pelvic Reconstruction with VRAM versus Omental Flaps: A Large Cohort Analysis." Journal of Reconstructive Microsurgery 35, no. 06 (2019): 425–29. http://dx.doi.org/10.1055/s-0038-1677524.

Full text

Abstract:

Background The purpose of this study is to describe our experience and outcomes in oncoplastic pelvic reconstruction for patients who underwent either vertical rectus abdominis musculocutaneous (VRAM) or omental flap following abdominoperineal resection (APR) at a single tertiary care institution. Methods All patients who underwent pelvic reconstruction following APR with either VRAM or omental flaps from January 1992 to January 2017 were retrospectively reviewed. Patient demographics and relevant comorbidities including chemotherapy and radiation therapy data were collected and analyzed. In a

APA, Harvard, Vancouver, ISO, and other styles

More sources

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!