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Journal articles on the topic 'Wafer-Scale mapping'

Author: Grafiati

Published: 22 June 2024

Last updated: 31 July 2025

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1

Tajima, Michio, E. Higashi, Toshihiko Hayashi, Hiroyuki Kinoshita, and Hiromu Shiomi. "Characterization of SiC Wafers by Photoluminescence Mapping." Materials Science Forum 527-529 (October 2006): 711–16. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.711.

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The effectiveness of room-temperature photoluminescence (PL) mapping was demonstrated for nondestructive detection of structural defects, such as dislocations, micropipes and stacking faults, in SiC wafers. PL spectra of bulk wafers were dominated by deep-level emissions due to Si vacancies, vanadium and undefined centers like UD-1 at room temperature, while those from epitaxial wafers involved near band-edge emission. We developed a whole-wafer PL intensity mapping system with a capability of zooming in on the area of interest with a spatial resolution as high as 1 μm, and showed that the map

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Mackenzie, David M. A., Kristoffer G. Kalhauge, Patrick R. Whelan, et al. "Wafer-scale graphene quality assessment using micro four-point probe mapping." Nanotechnology 31, no. 22 (2020): 225709. http://dx.doi.org/10.1088/1361-6528/ab7677.

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3

Miner, C. J. "Wafer-scale temperature mapping for molecular beam epitaxy and chemical beam epitaxy." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 3 (1993): 998. http://dx.doi.org/10.1116/1.586910.

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4

Buron, Jonas D., David M. A. Mackenzie, Dirch H. Petersen, et al. "Terahertz wafer-scale mobility mapping of graphene on insulating substrates without a gate." Optics Express 23, no. 24 (2015): 30721. http://dx.doi.org/10.1364/oe.23.030721.

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Crovetto, Andrea, Patrick Rebsdorf Whelan, Ruizhi Wang, Miriam Galbiati, Stephan Hofmann, and Luca Camilli. "Nondestructive Thickness Mapping of Wafer-Scale Hexagonal Boron Nitride Down to a Monolayer." ACS Applied Materials & Interfaces 10, no. 30 (2018): 25804–10. http://dx.doi.org/10.1021/acsami.8b08609.

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6

Meshot, Eric R., Sei Jin Park, Steven F. Buchsbaum, et al. "High-yield growth kinetics and spatial mapping of single-walled carbon nanotube forests at wafer scale." Carbon 159 (April 2020): 236–46. http://dx.doi.org/10.1016/j.carbon.2019.12.023.

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7

Tian, Mengchuan, Ben Hu, Haifang Yang, et al. "Wafer Scale Mapping and Statistical Analysis of Radio Frequency Characteristics in Highly Uniform CVD Graphene Transistors." Advanced Electronic Materials 5, no. 4 (2019): 1800711. http://dx.doi.org/10.1002/aelm.201800711.

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Yao, Yong Zhao, Yukari Ishikawa, Koji Sato, et al. "Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C." Materials Science Forum 740-742 (January 2013): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.829.

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To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face) of 4H-SiC, a novel etching technique using vaporized KOH has been developed. It was found that this etching technique can reveal the three commonly found dislocation types, i.e., threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) as large hexagonal, small hexagonal and triangular, respectively. Centimeter-scale dislocation mapping has been obtained, and the pit positions on the C-face were compared with those o

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Shih, Po-Chou, Chun-Chin Hsu, and Fang-Chih Tien. "Automatic Reclaimed Wafer Classification Using Deep Learning Neural Networks." Symmetry 12, no. 5 (2020): 705. http://dx.doi.org/10.3390/sym12050705.

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Silicon wafer is the most crucial material in the semiconductor manufacturing industry. Owing to limited resources, the reclamation of monitor and dummy wafers for reuse can dramatically lower the cost, and become a competitive edge in this industry. However, defects such as void, scratches, particles, and contamination are found on the surfaces of the reclaimed wafers. Most of the reclaimed wafers with the asymmetric distribution of the defects, known as the “good (G)” reclaimed wafers, can be re-polished if their defects are not irreversible and if their thicknesses are sufficient for re-pol

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Lang, Simon, Alexandra Schewski, Ignaz Eisele, Christoph Kutter, and Wilfried Lerch. "(Best Paper Award) Aluminum Josephson Junction Formation on 200mm Wafers Using Different Oxidation Techniques." ECS Meeting Abstracts MA2023-01, no. 29 (2023): 1791. http://dx.doi.org/10.1149/ma2023-01291791mtgabs.

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For superconducting quantum circuits with a large number of Qubits, reproducible components are crucial for reducing entanglement decoherence. Particularly for reliable industrial manufacturing on full-scale 200 mm' wafers, a very high uniformity level is required to ensure sufficient coherence times. In the present work the special focus was put on manufacturing Al/AlOx/Al Josephson junctions (JJ), which are the most important component of many quantum circuit. Fully Al-based CMOS-compatible JJ’s were produced using a double dry etch process. After patterning the first Al metallization severa

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Berthou, William, Maxime Legallais, Gunay Yildirim, et al. "Large-Scale Exploration of the LiSiPON System Using a High Throughput Experimental Method." ECS Meeting Abstracts MA2024-01, no. 2 (2024): 455. http://dx.doi.org/10.1149/ma2024-012455mtgabs.

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Amorphous thin film materials in the LiPON(1) or LiSiPON(2) systems have been prepared for the first time in the early 1990s using magnetron sputtering. Since then, LiPON materials have been used as state-of-the-art solid electrolytes into all-solid-state thin film micro-batteries thanks to their outstanding properties (electrochemical stability vs Li°, wide electrochemical stability window of ~[4-0] V vs. Li+/Li0, isotropic and homogeneous medium, beneficial mechanical properties(3), very low electronic conductivity). The ionic conductivity of LiPON prepared from Li3PO4 targets remains rather

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Yates, Luke, Andrew T. Binder, Anthony Rice, et al. "(Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices." ECS Meeting Abstracts MA2023-02, no. 35 (2023): 1682. http://dx.doi.org/10.1149/ma2023-02351682mtgabs.

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Vertical gallium nitride (GaN) power devices continue to garner interest in multiple power conversion applications requiring a medium-voltage (1.2 – 20 kV) capability. Currently, silicon carbide (SiC) is addressing this voltage range, however, with a comparable critical electric field and superior mobility, GaN is expected to offer advantages in applications where fast switching and avalanche breakdown response times are desired. While uses in electric vehicles, solid-state transformers, and renewable energy conversion are being actively explored, the potential of a vertical GaN device for ele

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13

Yang, Dongxun, Jesse Henri Laarman, and Masayoshi Tonouchi. "Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)." Materials 17, no. 7 (2024): 1497. http://dx.doi.org/10.3390/ma17071497.

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Graphene shows great potential in developing the next generation of electronic devices. However, the real implementation of graphene-based electronic devices needs to be compatible with existing silicon-based nanofabrication processes. Characterizing the properties of the graphene/silicon interface rapidly and non-invasively is crucial for this endeavor. In this study, we employ terahertz emission spectroscopy and microscopy (TES/LTEM) to evaluate large-scale chemical vapor deposition (CVD) monolayer graphene transferred onto silicon wafers, aiming to assess the dynamic electronic properties o

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Abid, Poonam Sehrawat, Christian M. Julien, and Saikh S. Islam. "Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production." Nanomaterials 11, no. 1 (2021): 220. http://dx.doi.org/10.3390/nano11010220.

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Growth of monolayer WS2 of domain size beyond few microns is a challenge even today; and it is still restricted to traditional exfoliation techniques, with no control over the dimension. Here, we present the synthesis of mono- to few layer WS2 film of centimeter2 size on graphene-oxide (GO) coated Si/SiO2 substrate using the chemical vapor deposition CVD technique. Although the individual size of WS2 crystallites is found smaller, the joining of grain boundaries due to sp2-bonded carbon nanostructures (~3–6 nm) in GO to reduced graphene-oxide (RGO) transformed film, facilitates the expansion o

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Mackenzie, D., K. Kalhauge, P. Whelan, et al. "Wafer-scale graphene quality assessment using micro four-point probe mapping." Nanotechnology, no. 31 (March 13, 2020). https://doi.org/10.1088/1361-6528/ab7677.

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Micro four-point probes (M4PP) provide rapid and automated lithography-free transport properties of planar surfaces including two-dimensional materials. We perform sheet conductance wafer maps of graphene directly grown on a 100 mm diameter SiC wafer using a multiplexed seven-point probe with minor additional measurement time compared to a fourpoint probe. Comparing the results of three subprobes we find that compared to a single-probe result, our measurement yield increases from 72%–84% to 97%. The additional data allows for correlation analysis between adjacent subprobes, that must mea

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Wadhwa, Riya, Sanjeev Thapa, Sonia Deswal, Pradeep Kumar, and Mukesh Kumar. "Wafer-scale controlled growth of MoS2 by magnetron sputtering: from in-plane to inter-connected vertically-aligned flakes." Journal of Physics: Condensed Matter, January 19, 2023. http://dx.doi.org/10.1088/1361-648x/acb4d1.

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Abstract Recently, Molybdenum disulfide (MoS2) has attracted great attention due to its unique characteristics and potential applications in various fields. The advancements in the field have substantially improved at the laboratory scale however, a synthesis approach that produces large area growth of MoS2 on a wafer scale is the key requirement for the realization of commercial two-dimensional technology. Herein, we report tunable MoS2 growth with varied morphologies via RF sputtering by controlling growth parameters. The controlled growth from in-plane to vertically-aligned MoS2 flakes has

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17

Lagowski, Jacek, and Piotr Edelman. "Non-Contact Mapping of Fe Contamination in Oxidized Si Wafers with Sensitivity in Part-Per-Trillion Range." MRS Proceedings 428 (1996). http://dx.doi.org/10.1557/proc-428-449.

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AbstractTraces of iron contamination as minute as one part per trillion atom fraction can be detrimental to the gate oxide integrity of the very thin oxides, 10 nm or less, used in the most advanced ICs. Fe contamination monitoring discussed in this paper is done with the surface photovoltage (SPV) technique which measures the minority carrier diffusion length, L, before and after the recombination efficiency of iron is enhanced by optical splitting of the iron-boron pairs. Wafer-scale mapping of iron gives fingerprints of contaminating tools and processes. In this paper, we also present an ex

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18

Wang, Huizheng, Qize Yang, Taiquan Wei, et al. "TMAC: Training-targeted Mapping and Architecture Co-exploration for Wafer-scale Chips." Integrated Circuits and Systems, 2024, 1–19. https://doi.org/10.23919/ics.2024.3515003.

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Chen, Fu Der, Ankita Sharma, David A. Roszko, et al. "Development of wafer-scale multifunctional nanophotonic neural probes for brain activity mapping." Lab on a Chip, 2024. http://dx.doi.org/10.1039/d3lc00931a.

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Optical techniques, such as optogenetic stimulation and functional fluorescence imaging, have been revolutionary for neuroscience by enabling neural circuit analysis with cell-type specificity. To probe deep brain regions, implantable light...

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Kreutzer, Tom-Niklas, Muhammad Zubair Ghori, Md Redwanul Islam, et al. "Wafer scale reactive sputtering of highly oriented and ferroelectric Al_0.6Sc_0.4N from 300 mm AlSc Targets." Journal of Micromechanics and Microengineering, July 3, 2025. https://doi.org/10.1088/1361-6439/adeb95.

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Abstract This paper presents progress towards the large-scale manufacturability of piezo- and ferroelectric Al1-xScxN thin films with very high Sc content. Al0.6Sc0.4N layers were deposited by pulsed DC reactive sputtering from a 300 mm diameter Al0.6Sc0.4 target on standard 200 mm Si wafers with Pt bottom- and Mo top-electrodes. The deposited films were analyzed in depth with X-Ray diffraction (XRD), Reciprocal Space Mapping (RSM), Scanning electron microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDX) showing well oriented c-axis growth over the full wafer with slight variation in

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21

Agulto, Verdad, Toshiyuki Iwamoto, Zixi Zhao, Shuang Liu, Kosaku Kato, and Makoto Nakajima. "Wafer-scale mapping of carrier density and mobility with terahertz time-domain ellipsometry." Optics Letters, January 2, 2025. https://doi.org/10.1364/ol.546091.

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22

Dinh, Khac Huy, Kevin Robert, Joelle Thuriot-Roukos, et al. "Wafer-Scale Performance Mapping of Magnetron-Sputtered Ternary Vanadium Tungsten Nitride for Microsupercapacitors." Chemistry of Materials, October 13, 2023. http://dx.doi.org/10.1021/acs.chemmater.3c01803.

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Faifer, Vladimir N., Michael I. Current, Wojtek Walecki, et al. "Non-contact Electrical Measurements of Sheet Resistance and Leakage Current Density for Ultra-shallow (and other) Junctions." MRS Proceedings 810 (2004). http://dx.doi.org/10.1557/proc-810-c11.9.

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ABSTRACTA novel, non-contact method for determination of ultra-shallow junction sheet resistance and leakage current density has been developed based on monitoring the dynamics of photo-generated carriers by means of spatially separated capacitive probes. At light modulation frequencies of about 100 kHz, spatially resolved surface voltage signals give a direct measure of the junction sheet resistance, independent of the junction depth. At lower light modulation frequencies, the junction leakage current density is determined. Combining capacitive monitoring of modulated photo-generated free car

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Edelman, Piotr, Jacek Lagowski, and Lubek Jastrzebski. "Surface Charge Imaging in Semiconductor Wafers by Surface Photovoltage (SPV)." MRS Proceedings 261 (1992). http://dx.doi.org/10.1557/proc-261-223.

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ABSTRACTWe present fast, wafer-scale imaging of the surface charge achieved via non-contact measurement of the surface potential barrier by surface photovoltage (SPV) under high excitation levels. The approach is capable of resolving surface charge differences as small as 108 q/cm2. Fundamentals of surface charge imaging are discussed, and the method is compared with standard SPV contamination mapping. Examples include problems relevant to silicon IC fabrication and surface charge maps of GaAs and InP.

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Lee, Brian, Duane S. Boning, Winthrop Baylies, Noel Poduje, and John Valley. "Modeling and Mapping of Nanotopography Interactions with CMP." MRS Proceedings 732 (2002). http://dx.doi.org/10.1557/proc-732-i1.5.

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AbstractAs the demand for planarity increases with advanced IC technologies, nanotopography has arisen as an important concern in shallow trench isolation (STI) chemical mechanical polishing (CMP) processes. Previous work has shown that nanotopography, or small surface height variations on raw wafers 20 to 50 nm in amplitude extending across millimeter scale lateral distances, can result in substantial CMP-induced localized thinning of surface films such as oxides or nitrides used in STI [1]. This interaction with CMP depends both on characteristics of the wafer such as heights and spatial wav

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Su, Chanmin, Shuiqing Hu, Yan Hu, Natalia Erina, and Andrea Slade. "Quantitative Mechanical Mapping of Biomolecules in Fluid." MRS Proceedings 1261 (2010). http://dx.doi.org/10.1557/proc-1261-u01-05.

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AbstractThough atomic force microscopy (AFM) interrogates biological materials through mechanical interactions, achieving quantitative mechanical information such as modulus and adhesion at high resolution has been a challenging task. A technology for nanometer scale mechanical property mapping, peak force tapping (PFT), was developed to achieve high resolution imaging and quantitative mechanical measurements simultaneously. PFT controls instantaneous interaction force and record force spectroscopy at each pixel to calculate mechanical properties. A feedback loop maintains a constant peak forc

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Abdi, S., A. Zozulia, J. Bolk, E. J. Geluk, K. Williams, and Y. Jiao. "High-Precision Mapping and Analysis of Wafer-Scale Distortions in InP Membranes to Si 3D Integration." IEEE Access, 2024, 1. http://dx.doi.org/10.1109/access.2024.3421283.

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Pearton, S. J., K. M. Lee, N. M. Haegel, et al. "Material and Device Properties of 3” Diameter GaAs-on-Si with Buried P-type Layers." MRS Proceedings 144 (1988). http://dx.doi.org/10.1557/proc-144-317.

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ABSTRACTTwo problems facing MOCVD grown GaAs-on-Si are firstly, scale up to 3” and greater wafer diameter with acceptably uniform layer thicknesses and electrical and optical properties, and secondly the achievement of adequate device isolation through the use of buffer layers of low doping density (≤1014 cm−3). We have investigated the thickness uniformity and 300K photoluminescence intensity of 3” Ø, MOCVD grown GaAs layers on Si substrates by whole wafer mapping of these parameters, and correlate the variations found with the gas flow direction during deposition of the GaAs. We have overcom

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Zhuang, Qiuna, Kuanming Yao, Mengge Wu, et al. "Wafer-patterned, permeable, and stretchable liquid metal microelectrodes for implantable bioelectronics with chronic biocompatibility." Science Advances 9, no. 22 (2023). http://dx.doi.org/10.1126/sciadv.adg8602.

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Implantable bioelectronics provide unprecedented opportunities for real-time and continuous monitoring of physiological signals of living bodies. Most bioelectronics adopt thin-film substrates such as polyimide and polydimethylsiloxane that exhibit high levels of flexibility and stretchability. However, the low permeability and relatively high modulus of these thin films hamper the long-term biocompatibility. In contrast, devices fabricated on porous substrates show the advantages of high permeability but suffer from low patterning density. Here, we report a wafer-scale patternable strategy fo

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Whelan, Patrick R., Domenico De Fazio, Iwona Pasternak, et al. "Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy." Scientific Reports 14, no. 1 (2024). http://dx.doi.org/10.1038/s41598-024-51548-z.

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AbstractTerahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformities and small domains due to reconstructions of the substrate during growth. The THz conductivity spectrum matches the predictions of the phenomenological Drude–Smith model for conductors with non-isotropic scattering caused by backscattering from boundaries and line defects. We compare the charge c

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Marinskiy, D., J. Lagowski, M. Wilson, A. Savtchouk, L. Jastrzebski, and D. DeBusk. "Small Signal AC-Surface Photovoltage Technique for Non-Contact Monitoring of Near Surface Doping and Recombination-Generation in the Depletion Layer." MRS Proceedings 591 (1999). http://dx.doi.org/10.1557/proc-591-225.

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ABSTRACTSmall signal non-contact ac-SPV method for monitoring near surface doping (NSD) in silicon has recently been introduced in commercial diagnostic tools. High chopping frequency light with a submicron penetration depth is used to generate small SPV signal and this signal is in turn monitored using a transparent pickup electrode. This technique has the advantage of producing fast, non-destructive full wafer measurement. Under certain conditions, the magnitude of this ac-SPV signal is inversely proportional to the depletion layer capacitance. If a depletion layer barrier height is known th

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Schmid, Daniel, René Eisermann, Anna Peczek, Georg Winzer, Lars Zimmermann, and Stephan Krenek. "Wafer-Scale Experimental Determination of Coupling and Loss for Photonic Integrated Circuit Design Optimisation." MDPI Photonics, March 5, 2025. https://doi.org/10.3390/photonics12030234.

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Fu, Wai Yuen, та Hoi Wai Choi. "Development of chipscale InGaN RGB displays using strain-relaxed nanosphere-deﬁned nanopillars". Nanotechnology, 2 квітня 2022. http://dx.doi.org/10.1088/1361-6528/ac6399.

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Abstract Chip-scale red, green and blue (RGB) light emission on an InGaN/GaN multi-quantum well (MQW) wafer adopting a top-down fabrication approach is demonstrated in this study, facilitated by shadow-masked nanosphere lithography for precise site-controlled nano-patterning. Exploiting the strain relaxation mechanism by fabricating arrays of nanosphere-deﬁned nanopillars of two diﬀerent dimensions utilizing a sequential shadow-masked nanosphere coating approach into the blue and green light-emitting pixel regions on a red-light emitting InGaN/GaN wafer, RGB light emission from a monolithic ch

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Zhu, Jiefei, Changjian Zhou, Qi Liu, and Min Zhang. "Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing." Applied Physics Letters 125, no. 19 (2024). http://dx.doi.org/10.1063/5.0219287.

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Neuromorphic devices can emulate the human brain to process information, which receives lots of attention in the field of artificial intelligence. Synaptic devices based on ferroelectric thin films feature low-power consumption, multifunctionality, and scalability. Among them, ferroelectric charged domain wall (CDW) devices have attracted intensive interest for the implementation of memristive devices due to their ultrahigh integration ability inherited from the nanoscale domain wall thickness. In particular, the preparation of wafer-scale single-crystalline ferroelectric thin films via ion-sl

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Parthasarathy, Ravi. "Process Considerations for Defluxing Ultra-Fine Pitch Die on CoWs." IMAPSource Proceedings 2024, DPC (2025). https://doi.org/10.4071/001c.129078.

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Heterogeneous integration stands as a pivotal strategy in the semiconductor technology realm. As process nodes relentlessly scale down from 16nm to 5nm and beyond, CMOS component speeds soar. This dynamic corresponds to incorporating twice the component count within the same space every 18-24 months. The evolution from CoS (Chip on Substrate) to CoW (Chip on Wafer) marks a significant advancement. CoW integrates chips onto an interposer, applies wafer-level molding, and culminates with a flip chip (FC) substrate connection. This technology offers a superior physical structure to accommodate ex

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Alcer, David, Lukas Hrachowina, Dan Hessman, and Magnus T. Borgström. "Processing and Characterization of Large Area InP Nanowire Photovoltaic Devices." Nanotechnology, April 12, 2023. http://dx.doi.org/10.1088/1361-6528/accc37.

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Abstract III−V nanowire (NW) photovoltaic devices promise high efficiencies at reduced materials usage. However, research has so far focused on small devices, mostly ≤ 1 mm². In this study, the upscaling potential of axial junction InP NW photovoltaic devices is investigated. Device processing was carried out on a full 2” wafer, with device sizes up to 1 cm², which is a significant increase from the mm-scale III−V NW photovoltaic devices published previously. The short-circuit current density of the largest 1 cm² devices, in which 460 million NWs are contacted in parallel, is on par with small

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Chu, Jinn P., Yi-Jui Yeh, Chih-Yu Liu, et al. "Core-shell metallic nanotube arrays for highly sensitive surface-enhanced Raman scattering (SERS) detection." Journal of Vacuum Science & Technology A 41, no. 6 (2023). http://dx.doi.org/10.1116/6.0003055.

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Here, we demonstrate the application of highly ordered, periodic Ag/Au core-shell triangle nanotube arrays as an ultrasensitive and low-cost surface-enhanced Raman scattering (SERS) substrate for the first time. The arrays of core-shell nanotube, with an outer diameter of 1.5 μm, were fabricated using top-down wafer-scale lithography followed by sequential sputter deposition of Ag and Au. The SERS activity of various combinations of core-shell structures was evaluated. It was found that Ag-core nanotubes overlaid with the Au-shell resulted in the highest Raman intensity, where the enhancement

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Biswas, Sujit K., Sandra B. Schujman, Robert Vajtai, et al. "AFM-based Electrical Characterization of Nano-structures." MRS Proceedings 738 (2002). http://dx.doi.org/10.1557/proc-738-g9.2.

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ABSTRACTCarbon nanotubes have the potential of being used as interconnects and active semiconducting material in future electronic circuits. It is necessary to study such nano-scale circuits with probes that can make measurements with molecular precision. We describe results using two nanoprobe techniques, namely scanning surface potential microscopy (SSPM), and conductive tip atomic force microscopy (CT-AFM), in the investigation of electrical properties of nanotube circuits. Vertical arrays of multi-walled nanotubes, grown in a porous alumina template with a metal back contact were analyzed.

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Biswas, Sujit K., Sandra B. Schujman, Robert Vajtai, et al. "AFM-based Electrical Characterization of Nano-structures." MRS Proceedings 761 (2002). http://dx.doi.org/10.1557/proc-761-nn6.2/g9.2.

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ABSTRACTCarbon nanotubes have the potential of being used as interconnects and active semiconducting material in future electronic circuits. It is necessary to study such nano-scale circuits with probes that can make measurements with molecular precision. We describe results using two nanoprobe techniques, namely scanning surface potential microscopy (SSPM), and conductive tip atomic force microscopy (CT-AFM), in the investigation of electrical properties of nanotube circuits. Vertical arrays of multi-walled nanotubes, grown in a porous alumina template with a metal back contact were analyzed.

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Yama, Nicholas S., I‐Tung Chen, Srivatsa Chakravarthi, et al. "Silicon‐Lattice‐Matched Boron‐Doped Gallium Phosphide: A Scalable Acousto‐Optic Platform." Advanced Materials, September 3, 2023. http://dx.doi.org/10.1002/adma.202305434.

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AbstractThe compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto‐optic figure of merit. In this work we demonstrate that silicon‐lattice‐matched boron‐doped GaP (BGaP), grown at the 12‐inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsi

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Kim, Kiup, Youngsun Lee, Kwang Bo Jung, et al. "Highly Stretchable 3D Microelectrode Array for Noninvasive Functional Evaluation of Cardiac Spheroids and Midbrain Organoids." Advanced Materials, December 15, 2024. https://doi.org/10.1002/adma.202412953.

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AbstractOrganoids are 3D biological models that recapitulate the complex structures and functions of human organs. Despite the rapid growth in the generation of organoids, in vitro assay tools are still limited to 2D forms. Thus, a comprehensive and continuous functional evaluation of the electrogenic organoids remains a challenge. Here, a highly stretchable 3D multielectrode array (sMEA) with protruding microelectrodes is presented for functional evaluation of electrogenic organoids. The optimized serpentine structures with bridge structures cover the surface of the organoids conformally even

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Snure, Michael, Eric W. Blanton, Vitali Soukhoveev, et al. "Spalling induced van der Waals lift-off and transfer of 4-in. GaN epitaxial films." Journal of Applied Physics 134, no. 2 (2023). http://dx.doi.org/10.1063/5.0153634.

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Epitaxial lift-off (ELO) of high-quality GaN layers allows for integration with a variety of materials enabling improved performance, reduced costs, and development of new electronics. Of the ELO technologies, two-dimensional (2D) material-based lift-off offers great promise but is still in the early stages of development and has yet to demonstrate the scale and yield of other ELO technologies. Here, we demonstrate the potential of this process's scalability, speed, and yield through epitaxial growth and lift-off of 4-in. GaN films using a 2D boron nitride (BN) van der Waals (vdW) buffer layer

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Ji, Yihong, Martin Frentrup, Xiaotian Zhang, et al. "Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation." Journal of Applied Physics 134, no. 14 (2023). http://dx.doi.org/10.1063/5.0165066.

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Strain-related piezoelectric polarization is detrimental to the radiative recombination efficiency for InGaN-based long wavelength micro-LEDs. In this paper, partial strain relaxation of InGaN multiple quantum wells (MQWs) on the wafer scale has been demonstrated by adopting a partially relaxed InGaN superlattice (SL) as the pseudo-substrate. Such a pseudo-substrate was obtained through an electro-chemical etching method, in which a sub-surface InGaN/InGaN superlattice was etched via threading dislocations acting as etching channels. The degree of strain relaxation in MQWs was studied by x-ray

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Waseem, Aadil, Gavin M. Latham, Clifford McAleese та ін. "Comprehensive study of β-Ga2O3 epitaxial growth using a variable closed-coupled showerhead MOCVD reactor". Applied Physics Reviews 12, № 2 (2025). https://doi.org/10.1063/5.0239454.

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β-Ga2O3 is a highly promising ultrawide bandgap semiconductor material that is poised to transform the high-power electronics field. The manufacturability of device quality β-Ga2O3 epitaxial films at scale is urgently needed. Using a production-ready closed-coupled showerhead MOCVD reactor with in situ reflectance monitoring, this study presents a detailed investigation of the impact of growth parameters on the epitaxial growth of β-Ga2O3 on both (010) and (001) oriented native substrates, as well as on c-plane sapphire substrates with 0°–8° off-axis orientations. By tuning the showerhead–susc

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Lihachev, Grigory, Johann Riemensberger, Wenle Weng, et al. "Low-noise frequency-agile photonic integrated lasers for coherent ranging." Nature Communications 13, no. 1 (2022). http://dx.doi.org/10.1038/s41467-022-30911-6.

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AbstractFrequency modulated continuous wave laser ranging (FMCW LiDAR) enables distance mapping with simultaneous position and velocity information, is immune to stray light, can achieve long range, operate in the eye-safe region of 1550 nm and achieve high sensitivity. Despite its advantages, it is compounded by the simultaneous requirement of both narrow linewidth low noise lasers that can be precisely chirped. While integrated silicon-based lasers, compatible with wafer scale manufacturing in large volumes at low cost, have experienced major advances and are now employed on a commercial sca

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Wachtendorf, B., R. Beccard, D. Schmitz, et al. "Reliable, Reproducible and Efficient MOCVD of III-Nitrides in Production Scale Reactors." MRS Proceedings 468 (1997). http://dx.doi.org/10.1557/proc-468-7.

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ABSTRACTIn this paper we present a class of MOCVD reactors with loading capacities up to seven 2″ wafers, designed for the mass production of LED structures.Our processes yield device quality GaN with excellent PL uniformities better than 1 nm across a 2″ wafer and thickness uniformities typically better than 2%.We also present full 2″ wafer mapping data, High Resolution Photoluminescence Wafer Scanning and sheet resistivity mapping, revealing the excellent composition uniformity of the nitride compounds InGaN and AlGaN. As well we will show sheet resistivity uniformity for Si-doped GaN and Mg

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