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Journal articles on the topic 'Weak localization scattering'

Author: Grafiati

Published: 14 March 2023

Last updated: 31 July 2025

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1

Stephen, Michael J. "Rayleigh Scattering and Weak Localization." Physical Review Letters 56, no. 17 (1986): 1809–10. http://dx.doi.org/10.1103/physrevlett.56.1809.

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2

Rhie, K., and D. G. Naugle. "Strong magnetic scattering in weak localization." IEEE Transactions on Magnetics 32, no. 5 (1996): 4666–68. http://dx.doi.org/10.1109/20.539112.

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3

YANG, Y. H. "MAGNETIC SCATTERING EFFECTS IN A QUASI-TWO-DIMENSIONAL DISORDERED ELECTRON SYSTEM." Modern Physics Letters B 14, no. 27n28 (2000): 995–1000. http://dx.doi.org/10.1142/s0217984900001257.

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The weak-localization correction to the conductivity for a quasi-two-dimensional disordered electron system is calculated in the presence of magnetic impurity scatterings. The analytical result is obtained as a function of the magnetic scattering time, and the interesting magnetic-scattering-dependent crossover behavior from 3D to 2D is discussed.

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4

Lu, J., B. Shen, N. J. Tang, D. J. Chen, and Y. D. Zheng. "Anti-Weak Localization of the Two Dimensional Electron Gas in Modulation-Doped Al_xGa_1-xN/GaN Single Quantum Well." Materials Science Forum 475-479 (January 2005): 1787–90. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1787.

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The weak-localization of the two-dimensional electron gas (2DEG) in a modulation-doped Al0.22Ga0.78N/GaN single quantum well has been investigated through the magnetoresistance measurements. The elastic scattering time τε, dephasing time τφ and spin-orbit(s-o) scattering time τso at various temperatures are obtained. The fitting parameters indicate that the inelastic scatterings to the 2DEG are mainly due to the piezoelectric field and the alloy disorder in the AlxGa1-xN barrier. When the second subband in the triangular quantum well at the heterointerface is occupied by the 2DEG, the anti-wea

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5

van der Mark, Martin B., Meint P. van Albada, and Ad Lagendijk. "Light scattering in strongly scattering media: Multiple scattering and weak localization." Physical Review B 37, no. 7 (1988): 3575–92. http://dx.doi.org/10.1103/physrevb.37.3575.

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6

Horsell, D. W., F. V. Tikhonenko, R. V. Gorbachev, and A. K. Savchenko. "Weak localization in monolayer and bilayer graphene." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 366, no. 1863 (2007): 245–50. http://dx.doi.org/10.1098/rsta.2007.2159.

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We demonstrate quantitative experimental evidence for a weak localization correction to the conductivity in monolayer and bilayer graphene systems. We show how inter- and intra-valley elastic scattering control the correction in small magnetic fields in a way which is unique to graphene. A clear difference in the forms of the correction is observed in the two systems, which shows the importance of the interplay between the elastic scattering mechanisms and how they can be distinguished. Our observation of the correction at zero-net carrier concentration in both systems is clear evidence of the

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7

Zaitsau, U. A., D. A. Podryabinkin, V. V. Melnikova, A. L. Danilyuk, and S. L. Prischepa. "Localization – Weak Antilocalization Crossover in Two-Dimensional Materials with Spin-Orbit Interaction." Doklady BGUIR 21, no. 5 (2023): 20–24. http://dx.doi.org/10.35596/1729-7648-2023-21-5-20-24.

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In this paper, the patterns of manifestation of weak localization and antilocalization in graphene with enhanced spin-orbit interaction, as well as in a topological insulator with a gap in surface states induced by magnetic impurities are studied. The parameters characterizing the manifestation of weak localization, antilocalization and crossover between them are established. Quantum corrections to the conductivity of graphene are determined in units of e2/h = 38.64 μS for various ratios between the characteristic dephasing time and spin-orbit scattering time. It has been established that with

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8

van der Mark, Martin B., Meint P. van Albada, and Ad Lagendijk. "Erratum: Light scattering in strongly scattering media: Multiple scattering and weak localization." Physical Review B 38, no. 7 (1988): 5063. http://dx.doi.org/10.1103/physrevb.38.5063.

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9

LAL, R., V. P. S. AWANA, K. P. SINGH, R. B. SAXENA, H. KISHAN, and A. V. NARLIKAR. "A COMPARISON OF THE RESISTIVITY BEHAVIOR OF MgB2, AlB2 AND AgB2 SYSTEMS." Modern Physics Letters B 20, no. 16 (2006): 989–94. http://dx.doi.org/10.1142/s0217984906011116.

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Measurements have been performed on the resistivity of samples MgB 2, AlB 2 and AgB 2. The samples show presence of impurities. By analyzing the data in terms of impurity scattering, electron-phonon scattering, and weak localization, it has been found that the AlB 2 ( AgB 2) sample involves maximum (minimum) effect of the impurity, electron-phonon interaction and weak localization.

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10

Maret, Georg, and Pierre Etienne Wolf. "Multiple Light Scattering: Weak Localization and Dynamic Fluctuations." Physica Scripta T29 (January 1, 1989): 223–25. http://dx.doi.org/10.1088/0031-8949/1989/t29/042.

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11

Kaveh, M., M. Rosenbluh, I. Edrei, and I. Freund. "Weak Localization and Light Scattering from Disordered Solids." Physical Review Letters 57, no. 16 (1986): 2049–52. http://dx.doi.org/10.1103/physrevlett.57.2049.

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12

Stephen, Michael J., and Gabriel Cwilich. "Rayleigh scattering and weak localization: Effects of polarization." Physical Review B 34, no. 11 (1986): 7564–72. http://dx.doi.org/10.1103/physrevb.34.7564.

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13

Bergmann, Gerd. "WEAK LOCALIZATION AND ITS APPLICATIONS AS AN EXPERIMENTAL TOOL." International Journal of Modern Physics B 24, no. 12n13 (2010): 2015–52. http://dx.doi.org/10.1142/s021797921006468x.

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The resistance of two-dimensional electron systems such as thin disordered films shows deviations from Boltzmann theory, which are caused by quantum corrections and are called weak localization. The theoretical origin of weak localization is the Langer–Neal graph in Kubo formalism. It represents an interference experiment with conduction electrons split into pairs of waves interfering in the back-scattering direction. The intensity of the interference (integrated over the time) can easily be measured by the resistance of the film. The application of a magnetic field B destroys the phase cohere

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14

Bayer, G., and T. Niederdränk. "Weak localization of acoustic waves in strongly scattering media." Physical Review Letters 70, no. 25 (1993): 3884–87. http://dx.doi.org/10.1103/physrevlett.70.3884.

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15

Cwilich, Gabriel, and Michael J. Stephen. "Rayleigh scattering and weak localization: Geometric effects and fluctuations." Physical Review B 35, no. 13 (1987): 6517–20. http://dx.doi.org/10.1103/physrevb.35.6517.

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16

Wei, Wei, Ralph Rosenbaum, and Gerd Bergmann. "Magnetic scattering in AuCo and AgCo with weak localization." Physical Review B 39, no. 7 (1989): 4568–71. http://dx.doi.org/10.1103/physrevb.39.4568.

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17

Ito, Hiroshi, Motoki Matsuno, Seiu Katagiri, et al. "Metallic Conduction and Carrier Localization in Two-Dimensional BEDO-TTF Charge-Transfer Solid Crystals." Crystals 12, no. 1 (2021): 23. http://dx.doi.org/10.3390/cryst12010023.

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Charge-transfer salts based on bis(ethylenedioxy)tetrathiafulvalene (BEDO-TTF or BO for short) provide a stable two-dimensional (2D) metallic state, while the electrical resistance often shows an upturn at low temperatures below ~10 K. Such 2D weak carrier localization was first recognized for BO salts in the Langmuir–Blodgett films fabricated with fatty acids; however, it has not been characterized in charge-transfer solid crystals. In this paper, we discuss the carrier localization of two crystalline BO charge-transfer salts with or without magnetic ions at low temperatures through the analy

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18

Marengo, Edwin A., Maytee Zambrano-Nunez, and Paul Berestesky. "Cramér-Rao Bound Study of Multiple Scattering Effects in Target Localization." International Journal of Antennas and Propagation 2012 (2012): 1–13. http://dx.doi.org/10.1155/2012/390312.

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The target position information contained in scattering data is explored in the context of the scalar Helmholtz operator for the basic two-point scatterer system by means of the statistical estimation framework of the Fisher information and associated Cramér-Rao bound (CRB) relevant to unbiased position estimation. The CRB results are derived for the exact multiple scattering model and, for reference, also for the single scattering or first Born approximation model applicable to weak scatterers. The roles of the sensing configuration and the scattering parameters in target localization are ana

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19

Suchaneck, Gunnar, and Evgenii Artiukh. "Absence of Weak Localization Effects in Strontium Ferromolybdate." Applied Sciences 13, no. 12 (2023): 7096. http://dx.doi.org/10.3390/app13127096.

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Sr2FeMoO6-δ (SFMO) double perovskite is a promising candidate for room-temperature spintronic applications, since it possesses a half-metallic character (with theoretically 100% spin polarization), a high Curie temperature of about 415 K and a low-field magnetoresistance (LFMR). The magnetic, resistive and catalytic properties of the double perovskite SFMO are excellent for spintronic (non-volatile memory), sensing, fuel cell and microwave absorber applications. However, due to different synthesis conditions of ceramics and thin films, different mechanisms of electrical conductivity and magnet

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20

Amaral, V. S. "On the contribution of magnetic scattering to weak localization magnetoresistance." Journal of Physics: Condensed Matter 2, no. 41 (1990): 8201–4. http://dx.doi.org/10.1088/0953-8984/2/41/008.

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21

Yoo, K. M., Y. Takiguchi, and R. R. Alfano. "Weak localization of photons: contributions from the different scattering pathlengths." IEEE Photonics Technology Letters 1, no. 4 (1989): 94–96. http://dx.doi.org/10.1109/68.87914.

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22

Lee, Jin Seok, and Sungbae Lee. "Weak Localization in Bilayer Graphene: Enhanced Scattering near Dirac Point." Journal of the Korean Physical Society 76, no. 3 (2020): 247–50. http://dx.doi.org/10.3938/jkps.76.247.

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23

AVERKIEV, NIKITA S., and KONSTANTIN S. ROMANOV. "2D ANOMALOUS MAGNETORESISTANCE IN THE PRESENCE OF SPIN–ORBIT SCATTERING." International Journal of Nanoscience 06, no. 03n04 (2007): 187–89. http://dx.doi.org/10.1142/s0219581x07004559.

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The model of weak localization in 2D semiconductor structures in the whole range of classically weak magnetic fields in the presence of the Elliot–Yafet spin relaxation has been developed. It was shown that the spin–orbit interaction influences the value of magnetoresistance in small magnetic fields (within diffusion approximation) and when diffusion approximation is no longer valid.

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24

Paramanik, Tapas, and I. Das. "Resistivity minima in the disordered cluster glass intermetallic compound Dy5Pd2: influence of quantum interference effects." RSC Advances 5, no. 96 (2015): 78406–13. http://dx.doi.org/10.1039/c5ra14515e.

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A resistance minimum in the temperature dependence of Dy<sub>5</sub>Pd<sub>2</sub> has been interpreted in terms of contributions from magnetic and phonon scattering, electron–electron interactions and weak localization.

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25

Pompe, Ruben C. R., Dominic T. Meiers, Walter Pfeiffer, and Georg von Freymann. "Weak Localization Enhanced Ultrathin Scattering Media (Advanced Optical Materials 18/2022)." Advanced Optical Materials 10, no. 18 (2022): 2270070. http://dx.doi.org/10.1002/adom.202270070.

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26

Jonckheere, Thibaut, Cord A. Müller, Robin Kaiser, Christian Miniatura, and Dominique Delande. "Multiple Scattering of Light by Atoms in the Weak Localization Regime." Physical Review Letters 85, no. 20 (2000): 4269–72. http://dx.doi.org/10.1103/physrevlett.85.4269.

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27

Lin, J., and N. Giordano. "Electron scattering times from weak localization studies of Au-Pd films." Physical Review B 35, no. 3 (1987): 1071–75. http://dx.doi.org/10.1103/physrevb.35.1071.

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28

Beenakker, C. W. J., and H. van Houten. "Boundary scattering and weak localization of electrons in a magnetic field." Physical Review B 38, no. 5 (1988): 3232–40. http://dx.doi.org/10.1103/physrevb.38.3232.

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29

Litinskaia, M. L., V. M. Agranovich, and G. C. La Rocca. "Elastic Scattering of Polaritons in High Quality Microcavities and Weak Localization." physica status solidi (a) 190, no. 2 (2002): 395–400. http://dx.doi.org/10.1002/1521-396x(200204)190:2<395::aid-pssa395>3.0.co;2-4.

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30

Childres, Isaac, Yaping Qi, Mohammad A. Sadi, John F. Ribeiro, Helin Cao, and Yong P. Chen. "Combined Raman Spectroscopy and Magneto-Transport Measurements in Disordered Graphene: Correlating Raman D Band and Weak Localization Features." Coatings 12, no. 8 (2022): 1137. http://dx.doi.org/10.3390/coatings12081137.

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Although previous studies have reported the Raman and weak localization properties of graphene separately, very few studies have examined the correlation between the Raman and weak localization characterizations of graphene. Here, we report a Raman spectroscopy and low-magnetic-field electronic transport study of graphene devices with a controlled amount of defects introduced into the graphene by exposure to electron-beam irradiation and oxygen plasma etching. The relationship between the defect correlation length (LD), calculated from the Raman “D” peak, and the characteristic scattering leng

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31

CLAYS, KOEN, KURT WOSTYN, YUXIA ZHAO, and ANDRÉ PERSOONS. "ALTERNATIVE EXPERIMENTAL DETERMINATION OF WEAK LOCALIZATION OF LIGHT IN NANOSTRUCTURED MATERIALS." Journal of Nonlinear Optical Physics & Materials 11, no. 03 (2002): 261–74. http://dx.doi.org/10.1142/s0218863502001012.

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An alternative experimental technique for the determination of weak localization of light in partially ordered nanostructured materials is proposed. The technique is based on the criterion for weak localization of light that the transport mean free path length of multiply scattered photons is reduced down to shorter than the wavelength of the light. This mean free path is calculated from the experimental dwell time of the photons in the scattering structure and by applying the photon random walk model using the diffusion approximation. The dwell time is experimentally determined by multifreque

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32

Peres, M. L., V. A. Chitta, G. M. Gusev, et al. "WEAK-LOCALIZATION IN n- AND p-TYPE FILMS OF Pb1-xEuxTe." International Journal of Modern Physics B 21, no. 08n09 (2007): 1519–23. http://dx.doi.org/10.1142/s0217979207043129.

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We investigated the magnetotransport properties of n- and p-type films of Pb 1-x Eu x Te grown by molecular beam epitaxy, with Eu concentrations close to the Metal-Insulator transition. The n-type sample shows a negative magnetoresistance which magnitude increases continually as the temperature is lowered. On the other hand, for the p-type sample, a negative magnetoresistance can be observed only for temperatures below 7 K. Comparing the magnetoresistance of both samples we show that the scattering mechanism should have a different origin.

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33

Kashirin, V. Yu, and Yu F. Komnik. "Weak localization effects and electron interactions in Bi films in a strong electric field." Low Temperature Physics 19, no. 2 (1993): 117–24. https://doi.org/10.1063/10.0033364.

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The behavior of quantum corrections to magnetoconductivity (MC) as a function of high-density currents (up to ∼ 104 A · cm−2) is investigated in thin (∼ 100 Å) Bi films. It is shown that a possible reason behind the variation of the MC curves is a close approach of the characteristic times τφ and τso due to the heating effect associated with the current (τφ is the time of inelastic scattering of electrons and τso is the time of the spin–orbit impurity scattering). It is found that it is significant to take into account only the localization correction to MC and its variation during heating for

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34

Orlenko, Elena V., and Fedor E. Orlenko. "Permutation Symmetry in Coherent Electrons Scattering by Disordered Media." Symmetry 12, no. 12 (2020): 1971. http://dx.doi.org/10.3390/sym12121971.

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A non-Anderson weak localization of an electron beam scattered from disordered matter is considered with respect to the principle of electron indistinguishability. A weak localization of electrons of a new type is essentially associated with inelastic processing. The origin of inelasticity is not essential. We take into account the identity principle for electron beam and electrons of the atom of the scatterer with an open shell. In spite of isotropic scattering by each individual scatterer, the electron exchange contribution has a hidden parameters effect on the resulting angular dependence o

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35

Kanzieper, E. A. "Destruction of weak localization in inelastic scattering of particles in disordered media." Physica Scripta 47, no. 6 (1993): 823–25. http://dx.doi.org/10.1088/0031-8949/47/6/025.

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36

Van Houten, H., C. W. J. Beenakker, B. J. Van Wees, and J. E. Mooij. "Boundary scattering modified one-dimensional weak localization in submicron GaAs/AlGaAs heterostructures." Surface Science 196, no. 1-3 (1988): 144–49. http://dx.doi.org/10.1016/0039-6028(88)90677-2.

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37

Sugiyama, Tadao, and Hanoch Gutfreund. "Effects of forward scattering and incommensurate lattice in 1-D weak localization." Physica B+C 143, no. 1-3 (1986): 224–26. http://dx.doi.org/10.1016/0378-4363(86)90102-6.

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38

Zou, C. Y., Lai Sen Wang, Xiang Liu, et al. "Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering." Advanced Materials Research 1120-1121 (July 2015): 424–28. http://dx.doi.org/10.4028/www.scientific.net/amr.1120-1121.424.

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In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with te

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39

BENDING, S. J., K. VON KLITZING, and K. PLOOG. "WEAK LOCALIZATION AS A PROBE FOR AN INHOMOGENEOUS MAGNETIC FIELD DISTRIBUTION." Modern Physics Letters B 05, no. 05 (1991): 323–30. http://dx.doi.org/10.1142/s0217984991000381.

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Type II superconducting films have been prepared on top of the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. In an applied magnetic field the inhomogeneous flux distribution at the superconductor is projected down onto the electron gas. At low applied fields the distribution at the 2DEG takes the form of flux tubes which are much narrower than an electron inelastic scattering length. In this regime we observe a qualitatively new weak localization magnetoconductivity proportional to |B| in contrast to the B2 homogeneous result and in semi-quantitative agreement with the

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40

Singh, Mahima, Labanya Ghosh, Vinod K. Gangwar, et al. "Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi_1.5Sb_0.5Te_1.3Se_1.7." Applied Physics Letters 121, no. 3 (2022): 032403. http://dx.doi.org/10.1063/5.0094556.

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The magneto-transport and angle-resolved photoelectron spectroscopy (ARPES) of the S-doped Bi1.5Sb0.5Te1.3Se1.7 system have been investigated. Both the positive magnetoresistance (pMR) and negative magnetoresistance (nMR) under a perpendicular magnetic field as well as a changeover from weak antilocalization (WAL) to weak localization (WL) are observed. The interplay between pMR and nMR is elucidated in terms of the dephasing and spin–orbit scattering time scales. The topological surface state bands have been explored using ARPES.

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41

QIU, SHI-YUE. "HALL EFFECT IN THIN FILMS WITH ROUGH SURFACE AND IMPURITY SCATTERING." Modern Physics Letters B 06, no. 22 (1992): 1361–69. http://dx.doi.org/10.1142/s021798499200106x.

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The result of microscopic, quantum calculations of one-electron conductivities, σxx (ω) and σxy (ω), in thin films with rough surface and impurity scattering, is reported. Although electronic conductivities have logarithmic singularity at low frequency within the weak localization regime, no such singularity is found for the Hall constant just like in the strictly two-dimensional disordered systems.

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42

Kashirin, V. Yu, and Yu F. Komnik. "Temperature variation of the electron phase relaxation time in thin films." Soviet Journal of Low Temperature Physics 18, no. 11 (1992): 872–76. https://doi.org/10.1063/10.0033312.

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Temperature dependences of inelastic relaxation time are obtained from the values of magnetoresistance of thin Bi films (∼ 100 Å) measured in the region of realization of weak electron localization effect. The physical nature of the temperature T0 separating the regions in which either electron-electron, or electron-phonon scattering dominates is discussed.

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43

ALESHIN, A. N., T. J. KIM, D. S. SUH, Y. W. PARK, H. KANG, and W. KANG. "THE EFFECTS OF PRESSURE AND MAGNETIC FIELD ON THE CONDUCTIVITY OF FeCl4 DOPED POLYACETYLENE: THE INFLUENCE OF SCATTERING BY LOW-ENERGY EXCITATIONS." International Journal of Modern Physics B 16, no. 20n22 (2002): 3097–100. http://dx.doi.org/10.1142/s0217979202013651.

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The effects of hydrostatic pressure and magnetic field on the conductivity of oriented polyacetylene films doped with FeCl 4- up to metallic state have been studied at T = 0.35-300 K. It was found that application of pressure up to 10 kBar increases the conductivity at 300 K by a factor of 1.3 and suppresses the resistivity minimum in ρ (T) at 270 - 280 K. At T < 2 K the temperature dependence of resistivity ρ (T) ~ ln T (at ambient pressure and at 10 kBar) which remains unaltered by a magnetic field up to 14 Tesla. Transverse magnetoresistance (MR) was found to be negative, linear and temp

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44

Bergmann, Gerd, and Christel Horriar-Esser. "Spin-orbit scattering in thin films and on surfaces measured by weak localization." Physical Review B 31, no. 2 (1985): 1161–63. http://dx.doi.org/10.1103/physrevb.31.1161.

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45

Sapienza, Riccardo, Diederik S. Wiersma, and Dominique Delande. "Anisotropic Weak Localization of Light: From Isotropic Scattering to Ordered Nematic Liquid Crystals." Molecular Crystals and Liquid Crystals 429, no. 1 (2005): 193–212. http://dx.doi.org/10.1080/15421400590930935.

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46

Dorosinets, Vladimir A., and Victor A. Borisov. "Determination of microscopical parameters of heterogeneous carbon materials." Journal of the Belarusian State University. Physics, no. 3 (September 30, 2019): 61–67. http://dx.doi.org/10.33581/2520-2243-2019-3-61-67.

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Experimental studies of the temperature dependence of the resistance and magnetoresistance of the composite metal-carbon samples C(Co), which show the effect of weak localization, have been carried out. The magnetoresistance at a temperature T = 2.2 K is alternating, which is explained by the spin-orbit interaction. Analysis of the magnetoresistance curves made it possible to calculate the values of the parameters characterizing the phase loss time in inelastic scattering and the spin-orbit interaction time. For the parameter characterizing the elastic scattering time, the minimum value was es

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47

Kashirin, V. Yu, and Yu F. Komnik. "Electron–phonon scattering in thin bismuth films." Low Temperature Physics 19, no. 4 (1993): 288–93. https://doi.org/10.1063/10.0033403.

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Comprehensive investigations of the weak localization and interaction of electrons and the electron overheating effect in thin bismuth films (∼ 100 Å) have been carried out at helium temperatures. Temperature dependences of inelastic electron relaxation times have been obtained from the magnetic field dependences of quantum corrections to the conductivity, and the variation of these corrections due to electron overheating has been used to find the temperature dependence of the electron–phonon scattering time in the temperature range where the electron–electron interaction processes dominate in

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48

Krasovitskiĭ, Vit B., O. N. Makarovskiĭ, O. A. Mironov, T. E. Whall та N. L. Mattey. "Weak localization and hole–hole interaction effects in boron δ-layers in epitaxial silicon". Low Temperature Physics 21, № 8 (1995): 642–45. https://doi.org/10.1063/10.0033860.

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The galvanomagnetic properties of a boron δ-layer in epitaxial silicon (carrier concentration 7·1013 cm‒2) in weak magnetic fields (from 10‒3 T to 2 T) at temperatures of 1.7−50 K is reported. It is shown that the temperature dependence of the conductivity is attributable to the simultaneous occurrence of the effects of weak localization in the presence of spin–orbit interaction and hole–hole interaction in the diffusion channel. In an investigation of the temperature dependence of the magnetoconductivity and the Hall effect the contributions of the weak localization and hole–hole interaction

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49

MEI, CHIANG C., and MATTHEW J. HANCOCK. "Weakly nonlinear surface waves over a random seabed." Journal of Fluid Mechanics 475 (January 25, 2003): 247–68. http://dx.doi.org/10.1017/s002211200200280x.

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We study the effects of multiple scattering of slowly modulated water waves by a weakly random bathymetry. The combined effects of weak nonlinearity, dispersion and random irregularities are treated together to yield a nonlinear Schrödinger equation with a complex damping term. Implications for localization and side-band instability are discussed. Transmission and nonlinear evolution of a wave packet past a finite strip of disorder is examined.

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Vargas, L. M. B., K. Bolaños, M. J. da Silva, S. de Castro, M. L. Peres, and M. P. F. de Godoy. "Weak localization effect in Zn_1−xCd_xO/CdO heterostructures." Journal of Applied Physics 133, no. 2 (2023): 025701. http://dx.doi.org/10.1063/5.0122729.

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Abstract:

We present a systematic investigation of the morphological and magnetotransport properties of Zn1− xCd xO/CdO heterostructures managing the electronic barrier by changing x values between [Formula: see text] and [Formula: see text]. From physical parameters such as roughness and crystallite size obtained through scanning electron microscopy and x-ray diffraction, we established a correlation between the disorder degree and the amplitude of the negative magnetoresistance as well as the nature of the dominating inelastic scattering mechanisms. The magnetoresistance measurements revealed a negati

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