Relevant bibliographies by topics / Wempe (Firm)

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Academic literature on the topic 'Wempe (Firm)'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Wempe (Firm)"

1

Maiga, Adam S., and Fred A. Jacobs. "Assessing JIT Performance: An Econometric Approach." Journal of Management Accounting Research 20, s1 (January 1, 2008): 47–59. http://dx.doi.org/10.2308/jmar.2008.20.s-1.47.

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ABSTRACT: This paper uses a sample of 131 just-in-time (JIT) firms and their matched non-JIT firms obtained from Kinney and Wempe with 1977–1995 Compustat data to assess whether the relationship between JIT adoption and firm performance is endogenous. Results indicate a significant positive association between JIT adoption and firm performance and strongly indicate that the decision to adopt JIT is endogenous. We also show that asset productivity, sales growth, and leverage, are important in explaining the effect of JIT adoption on performance and that firm characteristics are an important contributor to unobserved heterogeneity. Furthermore, the econometric analyses in the form of both Wooldridge 2SLS and Heckman approaches suggest that the underlying relationship between JIT adoption and performance is much stronger after controlling for endogeneity and self-selection bias and that OLS estimates are indeed biased.
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Studenyak, I. P., M. Kranjčec, V. Yu Izai, V. I. Studenyak, M. M. Pop, and L. M. Suslikov. "Ellipsometric and Spectrometric Studies of (Ga0.2In0.8)2Se3 Thin Film." Ukrainian Journal of Physics 65, no. 3 (March 26, 2020): 231. http://dx.doi.org/10.15407/ujpe65.3.231.

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Thermal evaporation technique is used to deposite (Ga0,2In0,8)2Se3 thin films. The refractive index and extinction coefficient dispersions are obtained from the spectral ellipsometry measurements. The dispersion of the refractive index is described in the framework of the Wemple–Di Domenico model. The optical transmission spectra of a (Ga0,2In0,8)2Se3 thin film are studied in the temperature range 77–300 K. The temperature behavior of the Urbach absorption edge, as well as the temperature dependences of the energy pseudogap and Urbach energy, are investigated. The influence of different types of disordering on the optical absorption edge of a (Ga0,2In0,8)2Se3 thin film is discussed. Optical parameters of a (Ga0,2In0,8)2Se3 thin film and a single crystal are compared.
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TORRES, JAIME, and JAIRO GIRALDO. "A SIMPLE MODEL FOR OBTAINING OPTICAL CONSTANTS OF POROUS SILICON." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 745–48. http://dx.doi.org/10.1142/s0217984901002440.

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A simple method is proposed to calculate optical constants from porous silicon (PS) thin films, out of the simulation of normal incidence reflection spectrums. In the optical system used in this model, PS one considers as a homogeneous uniform thin film when deposited upon a substrate with semi-infinite dimensions. The PS and Substrate refractive indexes are obtained using the Simple Harmonic Oscillator Model, proposed by Wemple and DiDomenico. In addition, the absorption coefficient and sample thickness are also be obtained. The model to calculate the optical constants of some samples prepared at different anodisation times is used.
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Štrbac, D. D., G. R. Strbac, G. Stojanovic, S. R. Lukic, and D. D. Petrovic. "Modification of some Optical and Mechanical Properties of Amorphous As-S-Se Thin Films by Copper Introduction." Advanced Materials Research 856 (December 2013): 267–71. http://dx.doi.org/10.4028/www.scientific.net/amr.856.267.

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Abstract. In this research experimental investigation of the influence of copper introduction on some relevant parameters in As-S-Se amorphous thin films is performed. Copper is introduced into As2(S0.5Se0.5)3amorphous thin film in concentration of 3 at.%. Samples of As2(S0.5Se0.5)3and Cu3(As2(S0.5Se0.5)3)97amorphous thin films are prepared by the vacuum thermal evaporation technique from previously synthesized bulk samples. Envelope method is applied for the determination of the optical constants, using the transmission and reflection spectra. The dispersion of the refractive index is discussed in terms of the single oscillator model proposed by Wemple–DiDomenico. Values of absorption coefficients in the high absorption region are discussed according to Tauc's law.Instrumented indentation testing is performed, using the Berkovich geometry indenter, for obtaining the value of nano-hardness.All the determined parameters have shown the increase with introduction of copper into amorphous thin film.
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TIFFOUR, IMANE, SALAH BASSAID, ABDELKADER DEHBI, ABDELKADER BELFEDAL, ABDEL-HAMID I. MOURAD, and ANDREAS ZEINERT. "REALIZATION AND CHARACTERIZATION OF A NEW ORGANIC THIN FILM SEMICONDUCTOR." Surface Review and Letters 26, no. 01 (January 2019): 1850127. http://dx.doi.org/10.1142/s0218625x18501275.

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The main objective of this paper is the realization and characterization of a new organic thin film semiconductor material through the use of an ideal mixture of Acetaminophen/Curcumin utilizing several characterization techniques. From optical analysis, we can conclude that our semiconductor material is comparable and shows good concurrency to the semiconductors applied in technologic applications. In fact, the analysis of the optical measurement (transmittance [Formula: see text] conducting to the optical energy bandgap, [Formula: see text], it was found the optical bandgap is around to [Formula: see text][Formula: see text]eV. In addition, by using the Wemple Didominico model it was found the dispersion energy ED varied from 5[Formula: see text]eV to 7[Formula: see text]eV, the average bandgap [Formula: see text] separated the center of both bands occupied and unoccupied is around 4.5[Formula: see text]eV and the static refractive index [Formula: see text] varies from 1.3 to 2 and it dependent on the compactness and transparency of the material.
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AGHGONBAD, MARYAM MOTALLEBI, and HASSAN SEDGHI. "SPECTROSCOPIC ELLIPSOMETRY STUDIES ON ZINC OXIDE THIN FILMS DEPOSITED BY SOL–GEL METHOD WITH VARIOUS PRECURSOR CONCENTRATIONS." Surface Review and Letters 26, no. 03 (March 24, 2019): 1850158. http://dx.doi.org/10.1142/s0218625x18501585.

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Zinc Oxide thin films were deposited on glass substrates by sol–gel spin coating method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine were used as precursor, solvent and stabilizer, respectively. Zinc acetate dihydrate was used with different molar concentrations of 0.15, 0.25 and 0.5 M. Optical properties of ZnO thin films such as dielectric constants, absorption coefficient, Urbach energy and optical band gap energy were calculated by spectroscopic ellipsometry (SE) method. The effect of zinc acetate concentration on optical properties of ZnO thin films is investigated. ZnO thin film with Zn concentration of 0.25 M had the highest optical band gap. Wemple DiDomenico oscillator model was used for calculation of the energy of effective dispersion oscillator, the dispersion energy, the high frequency dielectric constant, the long wavelength refractive index and the free carrier concentration.
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7

Abrishami, M. Ebrahimizadeh, and A. Kompany. "Effect of Mn Doping on Optical Properties of Nanostructured ZnO Thin Film." Advanced Materials Research 462 (February 2012): 201–5. http://dx.doi.org/10.4028/www.scientific.net/amr.462.201.

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Undoped and ZnO: Mn thin films with different Mn content ( 5, 10 and 15 mol%) were grown on glass substrates by spray pyrolysis technique. X-ray diffraction analysis showed that single phase wurtzite structure is formed in all samples. XRD results also indicated that the undoped ZnO were crystallized in c-axis oriented wurtzite structure, while the ZnO: Mn thin films were polycrystalline. The SEM results revealed that Mn presence were modified the surface morphology of the samples. The optical transmittance measurements were performed in the wavelength range from 190 to 1100 nm. The refractive index, extinction coefficient and film thickness were determined by using pointwise unconstrained minimization model. It was observed that the refractive index increased with the increase in Mn concentration. Also, the thin films exhibited the direct band gap increased from 3.20 to 3.28 eV with the increase in Mn content. The optical dispersion parameters have been calculated and analyzed by using Wemple-Di Domenico relation. The obtained values showed that dispersion energy Ed of doped samples was found to be decreasing comparing to undoped thin film.
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Mekhnache, Mounira, Hayet Benzarouk, and Abdelaziz Drici. "Structural, linear and non-linear optical properties of Cr-doped ZnO thin film for optoelectronics applications." International Journal of Materials Research 112, no. 2 (February 1, 2021): 150–57. http://dx.doi.org/10.1515/ijmr-2020-7977.

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Abstract In this work, optical properties of undoped zinc oxide (ZnO) and chromium (Cr) doped ZnO prepared at different concentrations of Cr (2, 3, and 5 wt.%) on glass substrates by a spray pyrolysis method are reported. The structural properties investigated by X-ray diffraction revealed the hexagonal wurtzite structure, noting that the crystallite size of the films decreases with increasing Cr content. The optical characterization of the samples was carried out using spectral transmittance. The refractive index, energy gap, and extinction coefficient of pure and Cr-doped ZnO thin films have been calculated. The single oscillator model of Wemple–DiDomenico was used to study the dispersion of the refractive index. The oscillator parameters, the single oscillator energy, the dispersion energy, and the static refractive index were determined. The linear optical susceptibility and non-linear optical susceptibility were also studied and discussed. These promising results achieved by Cr-doping of ZnO exhibited an important behavior for technological applications in electronic, optoelectronic devices and non-linear optical applications.
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PEÑA, C., and J. TORRES. "CALCULATION OF OPTICAL CONSTANTS IN POROUS SILICON THIN FILMS USING DIFFUSED AND SPECULAR REFLECTANCE MEASUREMENT." Surface Review and Letters 09, no. 05n06 (October 2002): 1821–25. http://dx.doi.org/10.1142/s0218625x02004475.

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In this work a method is proposed to calculate the optical constants of porous silicon (PS) thin films. The method is based on the theoretical simulation of the experimental reflectance spectra. In the optical system of this method the PS is considered a homogeneous, absorbing thin film, deposited on a silicon substrate of semi-infinite dimension. The theoretical form of the systems reflectance is calculated using the summation method proposed by Airy. Light scattering is included in the model by introducing the Davies–Bennett relation. The refraction index of the material is fit with the simple harmonic oscillator, proposed by Wemple–DiDomenico. The model was tested on two samples fabricated with anodization times of 25 and 35 min; the values for the refraction indexes, absorption coefficients, thickness and roughness were calculated for both samples. The PS samples were fabricated by electrochemical anodization of single crystal p-type silicon substrates in HF (25%) + isopropyl alcohol solution.
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Aghkonbad, Ehsan Motallebi, Maryam Motallebi Aghgonbad, and Hassan Sedghi. "A Study on Effect of Sol Aging Time on Optical Properties of ZnO Thin Films: Spectroscopic Ellipsometry Method." Micro and Nanosystems 11, no. 2 (August 20, 2019): 100–108. http://dx.doi.org/10.2174/1876402911666190313155304.

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Background: Due to wide band gap and large excitonic binding energy, being inexpensive, abundance in nature and easy synthesis ZnO is a promising candidate in many applications such as solar cells. Experimental: In the current work a series of ZnO thin films were deposited on glass substrates using sol-gel method to investigate the change in optical behavior of the film with sol aging time (asprepared, 8, 16, 24 and 32 hours) and the annealing temperature (300ᵒC and 500ᵒC). The optical properties of thin films were explored using spectroscopic ellipsometry method including the real and imaginary part of refractive index, real and imaginary part of dielectric function and band gap energy of the layers in the 300-900 nanometer wavelength range. Results: It can be deduced from the results that sol aging time and annealing temperature, affect the optical properties of the samples. Using single oscillator energy model of Wemple and Di Domenico parameters such as free charge carrier concentration ratio to effective mass, and plasma frequency, were calculated. Conclusion: The films prepared using 24 h aged solution, had the highest transmittance and the largest band gap energy.
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Dissertations / Theses on the topic "Wempe (Firm)"

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Moser, Kilian [Verfasser], Isabell M. [Akademischer Betreuer] Welpe, Isabell M. [Gutachter] Welpe, and Reiner [Gutachter] Braun. "Finding the keys to recruiting talent: The role of employer image in new ventures and large firms / Kilian Moser ; Gutachter: Isabell M. Welpe, Reiner Braun ; Akademischer Betreuer: Isabell M. Welpe." München : Universitätsbibliothek der Technischen Universität München, 2018. http://d-nb.info/1210715279/34.

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Rupprecht, Maximilian Fred [Verfasser], Alwine [Akademischer Betreuer] [Gutachter] Mohnen, and Isabell M. [Gutachter] Welpe. "Family Businesses: Understanding non-family managers’ discretion, goal diversity, and intra-firm heterogeneity / Maximilian Fred Rupprecht ; Gutachter: Alwine Mohnen, Isabell M. Welpe ; Betreuer: Alwine Mohnen." München : Universitätsbibliothek der TU München, 2016. http://d-nb.info/1137010428/34.

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Stiegler, Annika [Verfasser], Joachim [Akademischer Betreuer] Henkel, Isabell M. [Akademischer Betreuer] Welpe, and Nicola [Akademischer Betreuer] Breugst. "User-Manufacturer Integration – How User-Innovator Firms Exploit Their Innovativeness by Vertical Diversification / Annika Stiegler (geb. Bock). Gutachter: Isabell M. Welpe ; Nicola Breugst. Betreuer: Joachim Henkel." München : Universitätsbibliothek der TU München, 2012. http://d-nb.info/1029818835/34.

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