Relevant bibliographies by topics / Wet chemical etching

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers
  5. Reports

Academic literature on the topic 'Wet chemical etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 2 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Wet chemical etching.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Wet chemical etching"

1

Mileham, J. R., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, and S. P. Kilcoyne. "Wet chemical etching of AlN." Applied Physics Letters 67, no. 8 (August 21, 1995): 1119–21. http://dx.doi.org/10.1063/1.114980.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Rath, P., J. C. Chai, Y. C. Lam, V. M. Murukeshan, and H. Zheng. "A Total Concentration Fixed-Grid Method for Two-Dimensional Wet Chemical Etching." Journal of Heat Transfer 129, no. 4 (October 21, 2006): 509–16. http://dx.doi.org/10.1115/1.2709654.

Full text
Abstract:
A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely—the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation with prescribed initial and boundary conditions. The effects of reaction rate at the etchant–substrate interface are examined. The results obtained using the total concentration method, are compared with available results from the literature.
APA, Harvard, Vancouver, ISO, and other styles
3

Philipsen, Harold, Sander Teck, Nils Mouwen, Wouter Monnens, and Quoc Toan Le. "Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution." Solid State Phenomena 282 (August 2018): 284–87. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.284.

Full text
Abstract:
The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.
APA, Harvard, Vancouver, ISO, and other styles
4

Lee, J. W., S. J. Pearton, C. R. Abernathy, W. S. Hobson, F. Ren, and C. S. Wu. "Wet Chemical Etching of Al0.5In0.5 P." Journal of The Electrochemical Society 142, no. 6 (June 1, 1995): L100—L102. http://dx.doi.org/10.1149/1.2044249.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Stocker, D. A., E. F. Schubert, and J. M. Redwing. "Crystallographic wet chemical etching of GaN." Applied Physics Letters 73, no. 18 (November 2, 1998): 2654–56. http://dx.doi.org/10.1063/1.122543.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Hirano, Tomoki, Kenya Nishio, Takashi Fukatani, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Characterization of Wet Chemical Atomic Layer Etching of InGaAs." Solid State Phenomena 314 (February 2021): 95–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.95.

Full text
Abstract:
In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.
APA, Harvard, Vancouver, ISO, and other styles
7

Edwards, Stephanie, Ryan Persons, Steve Feltham, Jeff Howerton, Geoffrey Lott, and Daniel Macko. "Laser Etching of Gold Conductors for RF Applications." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000373–80. http://dx.doi.org/10.4071/2380-4505-2019.1.000373.

Full text
Abstract:
Abstract Thick film customers who require fine line resolution for their circuitry typically utilize wet chemical etching as a means to reduce conductor's lines and spaces when fine line definition cannot be reliably attained with screen printing alone. Wet chemical etching typically has the means to reduce conductor line widths from a printed definition of 3 mil (75 μm) to as low as 1 mil (25 μm) lines and spaces. The process of performing this chemical etching is time consuming and costly when factoring in the necessary process limitations. With the issues presented by wet chemical etching, thick film customers are presented with a high process cost, yield loss due to the imaging process, and costly wastewater/environmental treatment regulations. Therefore, laser etching will be presented as an alternative method to wet chemical etching for various thick film conductor products. For many years, specialized gold formulations have been etched using typical wet chemical etching processes. Standard and less costly conductor alloys that typically would not be suitable for wet chemical etching will be explored, possibly opening the doors for a wide variety of different applications which would benefit from utilizing this laser etching method. By being able to utilize different conductor alloys (Ag, Cu, etc.), laser etching offers alternative solutions for some of these applications with the added benefit of improved cost and increased throughput. As an example, wet chemical processing of silver conductors has proven to be very challenging in some cases due to the metal form-factor and specialized glasses required. By having the option of laser ablating the silver, a potentially advantageous and cost-effective option would now be possible. Taking into account that laser etching of thick film conductors on ceramic is a relatively new method, this paper will concentrate on some of the opportunities/advantages it can offer. It will illustrate the boundaries of laser etching and how it compares to wet chemical etching while determining/comparing the impact on several properties including adhesion, signal propagation, line definition, and other important defining characteristics of the fired film in the final application.
APA, Harvard, Vancouver, ISO, and other styles
8

Ueda, Dai, Yousuke Hanawa, Hiroaki Kitagawa, Naozumi Fujiwara, Masayuki Otsuji, Hiroaki Takahashi, and Kazuhiro Fukami. "Effect of Hydrophobicity and Surface Potential of Silicon on SiO2 Etching in Nanometer-Sized Narrow Spaces." Solid State Phenomena 314 (February 2021): 155–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.155.

Full text
Abstract:
Wet etching in nanometer-sized three-dimensional spaces creates new challengesbecause of the scaling of semiconductor devices with complex 3D architecture. Wet etching withinspaces is affected by the mass transport of the etchant ions that are impacted by the hydrophobicityand surface potential of surface. However, the kinetics of chemical reactions within the spaces is stillunclear.In this paper, we studied the effect of hydrophobicity and surface potential of silicon surface on SiO2etching in nanometer-sized narrow spaces by adding various additive components to etching solutions.We found that the transport of etchant ions into narrow spaces is governed by controlling thehydrophobicity and surface potential of the confined system walls.
APA, Harvard, Vancouver, ISO, and other styles
9

Ko, C. H., Y. K. Su, S. J. Chang, W. H. Lan, Jim Webb, M. C. Tu, and Y. T. Cherng. "Photo-enhanced chemical wet etching of GaN." Materials Science and Engineering: B 96, no. 1 (October 2002): 43–47. http://dx.doi.org/10.1016/s0921-5107(02)00323-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Vartuli, C. B., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, F. Ren, J. C. Zolper, and R. J. Shul. "Wet chemical etching survey of III-nitrides." Solid-State Electronics 41, no. 12 (December 1997): 1947–51. http://dx.doi.org/10.1016/s0038-1101(97)00173-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Wet chemical etching"

1

Chaudhury, Rabib. "Selective wet chemical etching of erosion resistant coatings from titanium alloy substrates: mechanism and optimization." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=117073.

Full text
Abstract:
Titanium aluminum nitride (TiAlN) is a type of erosion resistant ceramic coating that is applied to metal parts subject to high wear environments. Adding this coating helps protect the underlying substrate from these adverse conditions. Sometimes the coating layer must be removed and a new layer re-applied. The overarching goal of this project is to successfully remove the TiAlN coating from titanium alloy substrates through wet chemical etching. In meeting this goal, the following objectives must be met: the process must be fast, selective (i.e. does not adversely affect the underlying substrate), operate isothermally, and make use of chemicals that are environmentally friendly. A combination of hydrogen peroxide, potassium oxalate, and ethylenediaaminetetracetic acid (EDTA) was found to accomplish the stated objectives. Hydrogen peroxide and potassium oxalate are responsible for removing the coating and producing titanium metal ions in solution. The role of EDTA is to form coordination complexes with these metal ions so as to reduce their reactivity with hydrogen peroxide in solution. The etching process was optimized for selectivity. A kinetic model was built using a modified differential technique and Arrhenius plots. It was determined that selectivity increases with increasing temperature and potassium oxalate concentration while it decreases with increasing hydrogen peroxide concentration. Sensitivity analysis shows that selectivity is much more prone to change with changing hydrogen peroxide concentration. Surrogate modeling using a Least Squares-Support Vector Machine model confirms the trends predicted by the kinetic model except that selectivity seems to peak when varying potassium oxalate concentration.
Titanium aluminum nitride (TiAlN) est un type de revêtement céramique résistant à l'érosion qui est appliqué à des pièces métalliques soumises à des environnements à forte usure. L'ajout de ce revêtement permet de protéger le substrat de ces conditions défavorables. Parfois, la couche de revêtement doit être retiré et une nouvelle couche réappliqué. L'objectif principal de ce projet est de réussir à enlever le revêtement TiAlN à partir de substrats en alliage de titane par 'wet chemical etching'. Pour atteindre cet objectif, les objectifs suivants doivent être atteints: le processus doit être rapide, sélective (c'est à dire ne pas nuire au substrat titanium), de s'opérer dans une manière isotherme, et faire usage de produits chimiques qui sont respectueux de l'environnement. Une combinaison de hydrogen peroxide, potassium oxalate et de l'acide ethylenediaaminetetracetic (EDTA) a été trouvé pour atteindre les objectifs. Hydrogen peroxide et de potassium oxalate sont responsables de l'élimination du revêtement et produire des ions métalliques de titane en solution. Le rôle de l'EDTA est de former des complexes de coordination avec ces ions métalliques de manière à réduire leur réactivité avec le hydrogen peroxide en solution. Le processus a été optimisé pour la sélectivité. Un modèle cinétique a été construit en utilisant une méthode différentielle modifiée et des parcelles d'Arrhenius. Il a été déterminé que la sélectivité augmente avec la température et la concentration de potassium oxalate alors qu'il diminue quand la concentration de hydrogen peroxide augmente. L'analyse de sensibilité montre que la sélectivité est beaucoup plus enclin à changer avec la concentration de hydrogen peroxide. Modélisation de substitution (Surrogate Modeling) en utilisant un modèle Least Squares-Support Vector Machine confirme les tendances prédites par le modèle cinétique, sauf que la sélectivité semble culminer en variant la concentration d'oxalate de potassium.
APA, Harvard, Vancouver, ISO, and other styles
2

Sudirham, Janivita Joto. "Space-time discontinuous Galerkin methods for convection-diffusion problems application to wet-chemical etching /." Enschede : University of Twente [Host], 2005. http://doc.utwente.nl/50890.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Zheng, Wen Ph D. Massachusetts Institute of Technology. "Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104114.

Full text
Abstract:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2016.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 170-177).
Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates. Use of high surface-to-volume ratio structures has been demonstrated as an effective way to increase the electrode area, and therefore to improve the capacitance density, while still keeping the footprint area low. The goal of this thesis was to first develop an understanding of the mechanisms of metal assisted wet chemical etching for fabrication of arrays of silicon nanowires, and then use this understanding to build nanowire array on-chip capacitors in silicon substrates, in order to eliminate additional packaging and enable local and efficient energy delivery. Two types of capacitors were investigated: electrostatic metal-oxide-semiconductor (MOS) capacitors for power management, and supercapacitors for energy storage purposes. For both types of devices, enlarged surface area per footprint was achieved by utilizing the arrays of silicon nanowires. Fundamental studies of the roles of metals in metal-assisted chemical etching (MACE) of silicon were conducted. Lithography techniques were used to generate patterns in metal films which when subjected to MACE resulted in formation of ordered arrays of silicon nanowires. Investigation of various metal catalysts showed that Pt is a more active catalyst than Au, while Cu is not stable in the etchant. Tapered silicon nanowires can be generated by adding a layer of Cu between two Au layers, and etching occurs much faster than when a pure Au catalyst is used. While carrying out research on the mechanisms of MACE, we developed a new electrochemical method for formation of arrays of silicon nanowires, metal-assisted anodic etching (MAAE). In this process, the etchant consists of HF alone, and does not include an oxidant. In both processes, HF is used as an etchant. However, in MACE, electronic holes are supplied through reduction of an oxidant (e.g. H₂O₂), while in MAAE, electronic holes are supplied through an external circuit, with anodic contact to either the metal or the silicon. In both contact cases for MAAE, the metal catalyzes the etching process and leads to controlled formation of silicon nanowires, without the need for an oxidant. This discovery, and its analysis, provided new insights into the mechanisms of both MAAE and MACE, and also opened the possibility for use of metal catalyzed electrochemical etching of other materials that cannot survive the HF/oxidant mixture. Processes for fabrication of on-chip capacitors based on silicon nanowires were next developed. We first fabricated on-chip MOS capacitors with nanowire arrays etched using MACE with both single crystal silicon substrates and polycrystalline silicon films. For wires made in both cases, the capacitance density followed a same scaling trend related to their geometries. Epitaxial wafers were used with a post-etch doping process to reduce the series resistance in the devices in order to obtain a better frequency response, as desired for high frequency circuits. To achieve higher capacitance densities for energy storage purposes, we also designed a solid state supercapacitor device based on nanowires etched using MAAE with heavily doped n-type silicon substrates. The silicon nanowires were coated with RuO₂ using atomic layer deposition (ALD) to achieve a high capacitance. In this case, charge is stored through the formation of an electrical double layer and through reversible redox reactions. We showed that the capacitance density of these devices roughly scaled with the increased surface area of silicon nanowire arrays. The solid state supercapacitor achieved a capacitance density of 6.5mF/cm², which is comparable to the best results achieved with other types of on-chip supercapacitors. In contrast with other processes for forming on-chip supercapacitors, the supercapacitors we demonstrated were fabricated using a fully complementary metal-oxide-semiconductor (CMOS) technology compatible process. Moreover, the Si nanowire-based device achieved this high capacitance density without sacrificing power performance compared to the planar device.
by Wen Zheng.
Ph. D.
APA, Harvard, Vancouver, ISO, and other styles
4

Jain, Rahul. "Formation of Aminosilane and Thiol Monolayers on Semiconductor Surfaces and Bulk Wet Etching of III--V Semiconductors." Diss., The University of Arizona, 2012. http://hdl.handle.net/10150/255196.

Full text
Abstract:
Continuous scaling down of the dimensions of electronic devices has made present day computers more powerful. In the front end of line, the minimum lateral dimensions in a transistor have shrunk from 45 nm in 2007 to 22 nm currently, and the gate oxide film thickness is two to three monolayers. This reduction in dimensions makes surface preparation an increasingly important part of the device fabrication process. The atoms or molecules that terminate surfaces function as passivation layers, diffusion barriers, and nucleation layers. In the back end of line, metal layers are deposited to connect transistors. We demonstrate a reproducible process that deposits a monolayer of aminopropyltrimethoxysilane molecules less than one nanometer thick on a silicon dioxide surface. The monolayer contains a high density of amine groups that can be used to deposit Pd and Ni and subsequently Co and Cu to serve as the nucleation layer in an electroless metal deposition process. Because of the shrinking device dimensions, there is a need to find new transistor channel materials that have high electron mobilities along with narrow band gaps to reduce power consumption. Compound III--V channel materials are candidates to enable increased performance and reduced power consumption at the current scaled geometries. But many challenges remain for such high mobility materials to be realized in high volume manufacturing. For instance, low defect density (1E7 /cm²) III--V and Ge on Si is the most fundamental issue to overcome before high mobility materials become practical. Unlike Si, dry etching of III-V semiconductor surfaces is believed to be difficult and uncontrollable. Therefore, new wet etching chemistries are needed. Si has been known to passivate by etching in hydrofluoric acid, but similar treatments on III--Vs are known to temporarily hydrogen passivate the surfaces. However, any subsequent exposure to the ambient reoxidizes the surface, resulting in a chemically unstable and high defect density interface. This work compares old and new wet etching chemistries and investigates new methods of passivating the III--V semiconductors.
APA, Harvard, Vancouver, ISO, and other styles
5

Fraser, Michael John. "Optical Fiber Microstructures for Self-Contained Whispering Gallery Mode Excitation." Diss., Virginia Tech, 2016. http://hdl.handle.net/10919/73659.

Full text
Abstract:
Optical resonators, which confine light by resonant recirculation, serve as the basis for a wide variety of optical components. Though they appear in many geometric forms, the most effective of optical resonators show axial symmetry in at least one dimension. A popular variation that finds broad application is the dielectric sphere. Acclaimed for their high quality (Q) factor and small modal volume, spheres owe credit of these attractive features to their support of whispering gallery mode (WGM) resonances. The sensitivity of a resonance's frequency and Q to strain, temperature, and other parameters of the surrounding medium can be the basis for ultracompact modulators and sensors. Physically, WGMs are special optical modes which can be understood as light rays that orbit the equator of the sphere guided by total internal reflection. Like a smooth stone can be skipped along the surface of a pond, light can be confined to the inside of a sphere by successive reflections. To best excite WGMs, the source light should initially trace a line tangent to the sphere's circumference. But incorporating a tiny sphere with such nanometric tolerances into a practical sensor structure has its challenges and the prospects for microsphere applications have suffered because of the plight of this problem. The work in this dissertation details the fabrication and function of three new "press fit" spherical resonators. These etched fiber micro-devices were developed to meet the demand for a robust, self-integrated means of coupling light between an optical fiber and WGMs in a microsphere resonator. The etching processes have been tuned to enable secure storage of a microsphere while also providing efficient excitation and interrogation of WGMs. Furthermore, the methods have been designed to be staightforward, quick, and repeatable. Using standard etchants on common polarization-maintaining fiber with readily purchased microspheres, the press fit resonators demonstrated here can be batch-fabricated and assembled. The press fit spherical resonator offers an alignment-free and conveniently pigtailed WGM coupler that has great potential for bio-science sensing applications and studies of resonant bispheres.
Ph. D.
APA, Harvard, Vancouver, ISO, and other styles
6

Patzig-Klein, Sebastian. "Untersuchungen zum Reaktionsverhalten kristalliner Siliziumoberflächen in HF-basierten Ätzlösungen." Doctoral thesis, TU Bergakademie Freiberg, 2009. https://tubaf.qucosa.de/id/qucosa%3A22706.

Full text
Abstract:
Die vorliegende Arbeit befasst sich mit der grundlegenden Untersuchung von Reaktionsmustern kristalliner Si-Oberflächen in HF-basierten Lösungen. Ausgehend von den industriell genutzten HF-HNO3-H2O-Gemischen wurden wisher wenig untersuchte HF/HNO3-Konzentrationsverhältnisse, die durch gelöste Stickoxide bedingten Folgereaktionen sowie der PH-Wert als Steuerparameter zur Aufarbeitung feinkörniger Si-Rohstoffe (Korngröße ≤ 0,5 mm) identifiziert. Die in diesem Kontext zentrale Rolle der NO+-Ionen wurde durch Untersuchung der spezifischen Reaktionsmuster an kristallinen as-cut und hydrophobierten Si-Oberflächen sowie bei Umsetzungen mit Oligosilanen als Modellverbindungen bestätigt. Die aus den umfassenden analytischen Daten (FT-IR-, Raman-, NMR-Spektroskopie, IC, REM-EDX, AFM) gewonnenen Erkenntnisse liefern einen wichtigen Beitrag zum Verständnis nasschemischer Halbleiterätzprozesse und erschließen neue Anwendungsfelder.
APA, Harvard, Vancouver, ISO, and other styles
7

Patzig-Klein, Sebastian. "Untersuchungen zum Reaktionsverhalten kristalliner Siliziumoberflächen in HF-basierten Ätzlösungen." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola&quot, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-27118.

Full text
Abstract:
Die vorliegende Arbeit befasst sich mit der grundlegenden Untersuchung von Reaktionsmustern kristalliner Si-Oberflächen in HF-basierten Lösungen. Ausgehend von den industriell genutzten HF-HNO3-H2O-Gemischen wurden wisher wenig untersuchte HF/HNO3-Konzentrationsverhältnisse, die durch gelöste Stickoxide bedingten Folgereaktionen sowie der PH-Wert als Steuerparameter zur Aufarbeitung feinkörniger Si-Rohstoffe (Korngröße ≤ 0,5 mm) identifiziert. Die in diesem Kontext zentrale Rolle der NO+-Ionen wurde durch Untersuchung der spezifischen Reaktionsmuster an kristallinen as-cut und hydrophobierten Si-Oberflächen sowie bei Umsetzungen mit Oligosilanen als Modellverbindungen bestätigt. Die aus den umfassenden analytischen Daten (FT-IR-, Raman-, NMR-Spektroskopie, IC, REM-EDX, AFM) gewonnenen Erkenntnisse liefern einen wichtigen Beitrag zum Verständnis nasschemischer Halbleiterätzprozesse und erschließen neue Anwendungsfelder.
APA, Harvard, Vancouver, ISO, and other styles
8

Lippold, Marcus. "Beiträge zum Verständnis des sauren nasschemischen Ätzens von Silicium." Doctoral thesis, Technische Universitaet Bergakademie Freiberg Universitaetsbibliothek "Georgius Agricola", 2014. http://nbn-resolving.de/urn:nbn:de:bsz:105-qucosa-145077.

Full text
Abstract:
Der Siliciumauflöseprozess in HF-HNO3-H2SO4/H2O-Lösungen unterscheidet sich vom Ätzprozess in HF-HNO3-H2O-Standardmischungen in Bezug auf die Reaktivität gegenüber Silicium, erzielte Oberflächenmorpholgien sowie die beim Ätzen entstehenden gelösten und gasförmigen Produkte. Durch die Behandlung in H2SO4-reichen HF-HNO3-H2SO4/H2O-Lösungen werden auf Siliciumwafern Texturen mit hoher Rauigkeit und geringer Reflexion erzeugt. mc-Si-Solarzellen texturiert durch eine H2SO4-reiche Ätzlösung weisen vergleichend zu Solarzellen mit Standardtexturen höhere Wirkungsgrade auf. In HF-HNO3-H2SO4/H2O-Lösungen mit hohen Schwefelsäurekonzentrationen (c(H2SO4) > c(H2O)) wirkt sowohl das Salpetersäuremolekül HNO3 als auch das Nitrylion NO2+ als Oxidationsmittel. Trifluorsilan HSiF3 und Hexafluordisiloxan F3SiOSiF3 wurden erstmalig als gasförmige Produkte des sauren nasschemischen Ätzens identifiziert. Anhand von Modellreaktionen zur Reaktivität von Nitrylionen wurde deren Reduktionssequenz im Siliciumätzprozess aufgeklärt.
APA, Harvard, Vancouver, ISO, and other styles
9

Röper, Stephanie. "Strukturuntersuchungen an biologischen Materialien mit Hilfe rasterkraftmikroskopiebasierender Nanotomographie." Doctoral thesis, Universitätsbibliothek Chemnitz, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-68803.

Full text
Abstract:
Ziel ist die räumliche Abbildung biologischer Materialien (Knochen, Kollagenfibrillen und Zähne) hinsichtlich deren Struktur auf der Nanometerskala mit Hilfe der Nanotomographie. Die Nanotomographie ist eine moderne dreidimensionale Volumenabbildungsmethode auf der Nanometerskala basierend auf der Rasterkraftmikroskopie. Für die Nanotomographie wurden Ätzprotokolle an Zähnen, Kollagenfibrillen und Knochen entwickelt, die einen gleichmäßigen Abtrag bewirken. Lineare Verschiebungen der aufgenommenen Schichten werden mit Hilfe der manuellen Registrierung korrigiert und zu einem Volumenbild rekonstruiert. Ein zentrales Ergebnis sind dabei erste hochaufgelöste Volumenbilder einzelner Kollagenfibrillen im nativen Knochen. Neben der konventionellen Nanotomographie wird ein Ansatz zur automatisierten Nanotomographie mit einer Auflösung von 10 nm am Beispiel des menschlichen Knochens und Zahnes demonstriert. Mit Hilfe von mikroskopischen und elektronenmikroskopischen Techniken wurden die verschiedenen Strukturebenen des humanen Zahn und Knochens abgebildet und die räumlichen Strukturen der TM-AFM-Bilder auf der Mikro- und Nanometerskala eingeordnet. Darüber hinaus konnte mit Hilfe analytischer Messmethoden die chemische Zusammensetzung des kortikalen nativen Knochens erfasst werden und Änderungen durch das Ätzen detektiert werden.
APA, Harvard, Vancouver, ISO, and other styles
10

Lai, Yung-Yu, and 賴永裕. "The Study of Chemical Wet Etching on GaN Epi-layer." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/86721184869275920065.

Full text
Abstract:
碩士
淡江大學
化學工程與材料工程學系碩士班
101
This study use the different etchants to do wet-etching process on the un-doped GaN epi-layer on sapphire substrate. We investigate in detail about the depth and morphology by different etching conditions. In this experiment, metal-organic chemical vapor deposition (MOCVD) was used to regrow un-doped GaN on sapphire substrate. And then, c-plane GaN epi-layer was used to the basic substrate for etching study. The different polarities face have respective phenomenon in etching process. Therefore, this study will discuss the different etching behaviors of GaN epi-layer. Finally, we found that molten KOH will etch the plane of (101 ¯2) and (101 ¯1 ¯ ) at 180°C. The etching will get more energy to do shrinkage, when we enhance the temperature to 260°C, and then the plane will change to (11 ¯00) and (101 ¯1 ¯ ). The H3PO4 will etch the plane of (11 ¯00) and (101 ¯1 ¯ ) at 180°C and 260°C. And then, the H3PO4+H2SO4 will etch the plane (101 ¯1 ¯ ) only at 180°C and 260°C.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Wet chemical etching"

1

Sarangan, Andrew. "Wet Chemical and Plasma Etching." In Nanofabrication, 209–40. Boca Raton : CRC Press, Taylor & Francis Group, 2017. | Series: Optical sciences and applications of light: CRC Press, 2016. http://dx.doi.org/10.1201/9781315370514-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Ombaba, Mathew, Salman B. Inayat, and M. Saif Islam. "Wet Chemical and Electrochemical Etching Processes." In Encyclopedia of Nanotechnology, 1–9. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-6178-0_431-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Ombaba, Mathew, Salman B. Inayat, and M. Saif Islam. "Wet Chemical and Electrochemical Etching Processes." In Encyclopedia of Nanotechnology, 4373–80. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_431.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Horn, A., and G. Wachutka. "Three-Dimensional Simulation of Orientation-Dependent Wet Chemical Etching." In Simulation of Semiconductor Processes and Devices 2004, 133–36. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_32.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Ward, Jonathan. "Asymptotic Analysis of a Multi-Component Wet Chemical Etching Model." In Mathematics in Industry, 327–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-25100-9_38.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Day, R. J., M. S. Waters, and J. Rasile. "Incorporation of Chromium in Sputtered Copper Films and Its Removal During Wet Chemical Etching." In Springer Series in Chemical Physics, 403–4. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82724-2_108.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Ils, P., M. Michel, A. Forchel, I. Gyuro, P. Speier, and E. Zielinski. "Fabrication of Ultrasmall InGaAs/InP Nanostructures by High Voltage Electron Beam Lithography and Wet Chemical Etching." In NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies, 77–80. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-015-8261-2_8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Ishikawa, Eiichi, Susumu Fukatsu, Kentaro Onabe, Yasuhiro Shiraki, and Ryoichi Ito. "Ultrafine AlGaAs/GaAs Quantum-Well Wire Fabrication by Combining Electron Beam Lithography and Two-Step Wet Chemical Etching." In Science and Technology of Mesoscopic Structures, 373–78. Tokyo: Springer Japan, 1992. http://dx.doi.org/10.1007/978-4-431-66922-7_39.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

"Wet Chemical Etching and Wet Bulk Micromachining—Pools as Tools." In Manufacturing Techniques for Microfabrication and Nanotechnology, 229–332. CRC Press, 2011. http://dx.doi.org/10.1201/9781439895306-8.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

"Wet Chemical Etching and Wet Bulk Micromachining—Pools as Tools." In Fundamentals of Microfabrication and Nanotechnology, Three-Volume Set, 875–978. CRC Press, 2018. http://dx.doi.org/10.1201/9781315274164-21.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Wet chemical etching"

1

Kaneko, Kimihisa, Tomoyoshi Noda, Masayoshi Sakata, and Tomomi Uchiyama. "Observation and Numerical Simulation for Wet Chemical Etching Process of Semiconductor." In ASME/JSME 2003 4th Joint Fluids Summer Engineering Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/fedsm2003-45707.

Full text
Abstract:
This paper concerns with the basic investigations on the wet chemical etching of semiconductors. First, a method to observe the etched cross-section of aluminum layer is developed. It is applied to the observation for the cross-section of a test piece etched in a quiescent etchant. The observation successfully makes clear the time variation for the geometry of the etched cross-section, and elucidates the effects of the resist width on the geometry. Secondly, the numerical simulation for the etching process is performed. The simulated geometry of the etched cross-section is confirmed to agree with the observed result, indicating that the present numerical simulation is effectively used to predict the geometry of the etched cross-section.
APA, Harvard, Vancouver, ISO, and other styles
2

Rath, P., J. C. Chai, H. Y. Zheng, Y. C. Lam, and V. M. Murukeshan. "A Total-Concentration Fixed-Grid Method for Two-Dimensional Diffusion-Controlled Wet Chemical Etching." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72186.

Full text
Abstract:
This article presents a total concentration method for two-dimensional wet chemical etching. The proposed procedure is a fixed-grid approach. It is analogous to the enthalpy method used for modeling melting/solidification problems. The governing equation is formulated using the total concentration of the etchant. It includes the reacted and the unreacted concentrations of the etchant. The proposed governing equation includes the interface condition. The reacted concentration is used to capture the etchant-substrate interface implicitly. Since the grids are fixed, a diffusion problem remains a diffusion problem unlike the moving grid approach where the diffusion problem becomes the convection-diffusion problem due to the mesh velocity. For demonstration purposes, the finite volume method is used to solve for the transient concentration distribution of etchant. In this article, two-dimensional diffusion-controlled wet chemical etching processes are modeled. The results obtained from the proposed total concentration method are compared with available “analytic” solutions and solutions from moving-grid approach.
APA, Harvard, Vancouver, ISO, and other styles
3

Ansorge, E., S. Schimpf, S. Hirsch, B. Schmidt, J. Sauerwald, and H. Fritze. "Gas detecting langasite membranes by wet chemical etching." In 2005 IEEE Sensors. IEEE, 2005. http://dx.doi.org/10.1109/icsens.2005.1597679.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Kazanowska, Barbara A., Keshab R. Sapkota, Brendan P. Gunning, Kevin S. Jones, and George T. Wang. "Exploring AlGaN nanostructures fabricated via chemical wet etching." In Gallium Nitride Materials and Devices XVI, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2021. http://dx.doi.org/10.1117/12.2582551.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Pan, Yuzhai, Yongqiang Ning, Li Qin, Hui Suo, Yun Liu, and Lijun Wang. "Fabrication of InGaAs/InGaAsP microcylinder by wet chemical etching." In International Symposium on Optoelectonics and Microelectronics, edited by Norman C. Tien and Qing-An Huang. SPIE, 2001. http://dx.doi.org/10.1117/12.444735.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Mohr, Lena, Tobias Krick, Martin Zimmer, Andreas Fischer, and Anamaria Moldovan. "Numerical simulation of an ozone-based wet-chemical etching." In 15th International Conference on Concentrator Photovoltaic Systems (CPV-15). AIP Publishing, 2019. http://dx.doi.org/10.1063/1.5123856.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Nowak, Rainer, Simeon Metev, and Gerd Sepold. "Laser-assisted wet chemical etching of metals for microfabrication." In Europto High Power Lasers and Laser Applications V, edited by Eckhard Beyer, Maichi Cantello, Aldo V. La Rocca, Lucien D. Laude, Flemming O. Olsen, and Gerd Sepold. SPIE, 1994. http://dx.doi.org/10.1117/12.184772.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Fruehauf, Joachim, and Birgit Hannemann. "Micro-optical silicon elements fabricated by wet chemical etching." In Optical Systems Design and Production, edited by Roland Geyl and Jonathan Maxwell. SPIE, 1999. http://dx.doi.org/10.1117/12.360147.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

van Suchtelen, J., K. Sato, E. van Veenendaal, A. J. Nijdam, J. G. E. Gardeniers, W. J. P. van Enckevort, and M. Elwenspoek. "Simulation of anisotropic wet-chemical etching using a physical model." In Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291). IEEE, 1999. http://dx.doi.org/10.1109/memsys.1999.746850.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Feit, M. D., T. I. Suratwala, L. L. Wong, W. A. Steele, P. E. Miller, and J. D. Bude. "Modeling wet chemical etching of surface flaws on fused silica." In Laser Damage Symposium XLI: Annual Symposium on Optical Materials for High Power Lasers, edited by Gregory J. Exarhos, Vitaly E. Gruzdev, Detlev Ristau, M. J. Soileau, and Christopher J. Stolz. SPIE, 2009. http://dx.doi.org/10.1117/12.836912.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Wet chemical etching"

1

Hunt, C., and J. Trujillo. Silicon field emission points for vacuum IC's by wet chemical etching. Office of Scientific and Technical Information (OSTI), March 1990. http://dx.doi.org/10.2172/7032264.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Snyder, Paul G. Real Time Optical Monitoring of III-V Semiconductor Wet Chemical Etching. Fort Belvoir, VA: Defense Technical Information Center, December 2000. http://dx.doi.org/10.21236/ada387435.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Hui, Wing C. Technique for protecting chip corners in wet chemical etching of silicon wafers. Office of Scientific and Technical Information (OSTI), February 1991. http://dx.doi.org/10.2172/10169930.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Wet chemical etching' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography