Log in

Relevant bibliographies by topics / Wet chemical etching / Journal articles

To see the other types of publications on this topic, follow the link: Wet chemical etching.

Journal articles on the topic 'Wet chemical etching'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Wet chemical etching.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Mileham, J. R., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, and S. P. Kilcoyne. "Wet chemical etching of AlN." Applied Physics Letters 67, no. 8 (August 21, 1995): 1119–21. http://dx.doi.org/10.1063/1.114980.

Full text

APA, Harvard, Vancouver, ISO, and other styles

2

Rath, P., J. C. Chai, Y. C. Lam, V. M. Murukeshan, and H. Zheng. "A Total Concentration Fixed-Grid Method for Two-Dimensional Wet Chemical Etching." Journal of Heat Transfer 129, no. 4 (October 21, 2006): 509–16. http://dx.doi.org/10.1115/1.2709654.

Full text

Abstract:

A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely—the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation with prescribed initial and boundary conditions. The effects of reaction rate at the etchant–substrate interface are examined. The results obtained using the total concentration method, are compared with available results from the literature.

APA, Harvard, Vancouver, ISO, and other styles

3

Philipsen, Harold, Sander Teck, Nils Mouwen, Wouter Monnens, and Quoc Toan Le. "Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution." Solid State Phenomena 282 (August 2018): 284–87. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.284.

Full text

Abstract:

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.

APA, Harvard, Vancouver, ISO, and other styles

4

Lee, J. W., S. J. Pearton, C. R. Abernathy, W. S. Hobson, F. Ren, and C. S. Wu. "Wet Chemical Etching of Al0.5In0.5 P." Journal of The Electrochemical Society 142, no. 6 (June 1, 1995): L100—L102. http://dx.doi.org/10.1149/1.2044249.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Stocker, D. A., E. F. Schubert, and J. M. Redwing. "Crystallographic wet chemical etching of GaN." Applied Physics Letters 73, no. 18 (November 2, 1998): 2654–56. http://dx.doi.org/10.1063/1.122543.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Hirano, Tomoki, Kenya Nishio, Takashi Fukatani, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Characterization of Wet Chemical Atomic Layer Etching of InGaAs." Solid State Phenomena 314 (February 2021): 95–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.95.

Full text

Abstract:

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, nanoscale etching of InGaAs with no impact on the surface condition is possible with this method.

APA, Harvard, Vancouver, ISO, and other styles

7

Edwards, Stephanie, Ryan Persons, Steve Feltham, Jeff Howerton, Geoffrey Lott, and Daniel Macko. "Laser Etching of Gold Conductors for RF Applications." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000373–80. http://dx.doi.org/10.4071/2380-4505-2019.1.000373.

Full text

Abstract:

Abstract Thick film customers who require fine line resolution for their circuitry typically utilize wet chemical etching as a means to reduce conductor's lines and spaces when fine line definition cannot be reliably attained with screen printing alone. Wet chemical etching typically has the means to reduce conductor line widths from a printed definition of 3 mil (75 μm) to as low as 1 mil (25 μm) lines and spaces. The process of performing this chemical etching is time consuming and costly when factoring in the necessary process limitations. With the issues presented by wet chemical etching, thick film customers are presented with a high process cost, yield loss due to the imaging process, and costly wastewater/environmental treatment regulations. Therefore, laser etching will be presented as an alternative method to wet chemical etching for various thick film conductor products. For many years, specialized gold formulations have been etched using typical wet chemical etching processes. Standard and less costly conductor alloys that typically would not be suitable for wet chemical etching will be explored, possibly opening the doors for a wide variety of different applications which would benefit from utilizing this laser etching method. By being able to utilize different conductor alloys (Ag, Cu, etc.), laser etching offers alternative solutions for some of these applications with the added benefit of improved cost and increased throughput. As an example, wet chemical processing of silver conductors has proven to be very challenging in some cases due to the metal form-factor and specialized glasses required. By having the option of laser ablating the silver, a potentially advantageous and cost-effective option would now be possible. Taking into account that laser etching of thick film conductors on ceramic is a relatively new method, this paper will concentrate on some of the opportunities/advantages it can offer. It will illustrate the boundaries of laser etching and how it compares to wet chemical etching while determining/comparing the impact on several properties including adhesion, signal propagation, line definition, and other important defining characteristics of the fired film in the final application.

APA, Harvard, Vancouver, ISO, and other styles

8

Ueda, Dai, Yousuke Hanawa, Hiroaki Kitagawa, Naozumi Fujiwara, Masayuki Otsuji, Hiroaki Takahashi, and Kazuhiro Fukami. "Effect of Hydrophobicity and Surface Potential of Silicon on SiO₂ Etching in Nanometer-Sized Narrow Spaces." Solid State Phenomena 314 (February 2021): 155–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.155.

Full text

Abstract:

Wet etching in nanometer-sized three-dimensional spaces creates new challengesbecause of the scaling of semiconductor devices with complex 3D architecture. Wet etching withinspaces is affected by the mass transport of the etchant ions that are impacted by the hydrophobicityand surface potential of surface. However, the kinetics of chemical reactions within the spaces is stillunclear.In this paper, we studied the effect of hydrophobicity and surface potential of silicon surface on SiO2etching in nanometer-sized narrow spaces by adding various additive components to etching solutions.We found that the transport of etchant ions into narrow spaces is governed by controlling thehydrophobicity and surface potential of the confined system walls.

APA, Harvard, Vancouver, ISO, and other styles

9

Ko, C. H., Y. K. Su, S. J. Chang, W. H. Lan, Jim Webb, M. C. Tu, and Y. T. Cherng. "Photo-enhanced chemical wet etching of GaN." Materials Science and Engineering: B 96, no. 1 (October 2002): 43–47. http://dx.doi.org/10.1016/s0921-5107(02)00323-9.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Vartuli, C. B., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, F. Ren, J. C. Zolper, and R. J. Shul. "Wet chemical etching survey of III-nitrides." Solid-State Electronics 41, no. 12 (December 1997): 1947–51. http://dx.doi.org/10.1016/s0038-1101(97)00173-1.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Mayer, Steven T. "High Rate Copper Isotropic Wet Chemical Etching." ECS Transactions 35, no. 2 (December 16, 2019): 133–43. http://dx.doi.org/10.1149/1.3568855.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Mani, Arzhang, Mohammad Nikfalazar, Falk Muench, Aldin Radetinac, Yuliang Zheng, Alex Wiens, Sergiy Melnyk, et al. "Wet-chemical etching of SrMoO3 thin films." Materials Letters 184 (December 2016): 173–76. http://dx.doi.org/10.1016/j.matlet.2016.08.038.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Waclavek, Ján, Gabriel Krausko, and Jaroslava Škriniarová. "Opticalin situ monitoring of wet chemical etching." Surface and Interface Analysis 26, no. 1 (January 1998): 56–61. http://dx.doi.org/10.1002/(sici)1096-9918(199801)26:1<56::aid-sia348>3.0.co;2-j.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Sukhoroslova, Yu V., D. S. Veselov, and Yu A. Voronov. "Automated unit of the chemical wet etching." IOP Conference Series: Materials Science and Engineering 475 (February 18, 2019): 012005. http://dx.doi.org/10.1088/1757-899x/475/1/012005.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Lothian, J. R., J. M. Kuo, F. Ren, and S. J. Pearton. "Plasma and wet chemical etching of In0.5Ga0.5P." Journal of Electronic Materials 21, no. 4 (April 1992): 441–45. http://dx.doi.org/10.1007/bf02660409.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Çakır, Orhan. "Review of Etchants for Copper and its Alloys in Wet Etching Processes." Key Engineering Materials 364-366 (December 2007): 460–65. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.460.

Full text

Abstract:

Wet etching processes have been widely used for producing micro-components for various applications. These processes are simple and easy to implement. The selection of suitable chemical solution which is called etchant is the most important factor in the wet etching processes. It affects etch rate and surface finish quality. Copper and its alloys are important commercial materials in various industries, especially in electronics industry. Their wide applications are due to their excellent electrical and thermal conductivity, ease of fabrication, good strength and fatigue properties. The present study examines the possible etchants for copper and its alloys and reviews studies in detail to find out optimum etchant and its application parameters. The study is also aimed to provide information about safety, health and environmental issues caused by using various etchants in wet etching processes of copper and copper alloys.

APA, Harvard, Vancouver, ISO, and other styles

17

Kil, Yeon-Ho, Jong-Han Yang, Sukil Kang, Tae Soo Jeong, Taek Sung Kim, and Kyu-Hwan Shim. "Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer." JSTS:Journal of Semiconductor Technology and Science 13, no. 6 (December 31, 2013): 668–75. http://dx.doi.org/10.5573/jsts.2013.13.6.668.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Škriniarová, J., A. van der Hart, H. P. Bochem, A. Fox, and P. Kordoš. "Photoenhanced wet chemical etching of n+-doped GaN." Materials Science and Engineering: B 91-92 (April 2002): 298–302. http://dx.doi.org/10.1016/s0921-5107(01)01040-6.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Weber, J., S. Knack, O. V. Feklisova, N. A. Yarykin, and E. B. Yakimov. "Hydrogen penetration into silicon during wet-chemical etching." Microelectronic Engineering 66, no. 1-4 (April 2003): 320–26. http://dx.doi.org/10.1016/s0167-9317(02)00926-7.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Hao, Hong-Yue, Wei Xiang, Guo-Wei Wang, Ying-Qiang Xu, Zheng-Wei Ren, Xi Han, Zhen-Hong He, Yong-Ping Liao, Si-Hang Wei, and Zhi-Chuan Niu. "Wet Chemical Etching of Antimonide-Based Infrared Materials." Chinese Physics Letters 32, no. 10 (October 2015): 107302. http://dx.doi.org/10.1088/0256-307x/32/10/107302.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Ohira, Shigeo, and Naoki Arai. "Wet chemical etching behavior of β-Ga2O3single crystal." physica status solidi (c) 5, no. 9 (July 2008): 3116–18. http://dx.doi.org/10.1002/pssc.200779223.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Cuypers, D., S. De Gendt, S. Arnauts, K. Paulussen, and D. H. van Dorp. "Wet Chemical Etching of InP for Cleaning Applications." ECS Journal of Solid State Science and Technology 2, no. 4 (2013): P185—P189. http://dx.doi.org/10.1149/2.020304jss.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

van Dorp, D. H., D. Cuypers, S. Arnauts, A. Moussa, L. Rodriguez, and S. De Gendt. "Wet Chemical Etching of InP for Cleaning Applications." ECS Journal of Solid State Science and Technology 2, no. 4 (2013): P190—P194. http://dx.doi.org/10.1149/2.025304jss.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Stocker, D. A., I. D. Goepfert, E. F. Schubert, K. S. Boutros, and J. M. Redwing. "Crystallographic Wet Chemical Etching of p-Type GaN." Journal of The Electrochemical Society 147, no. 2 (2000): 763. http://dx.doi.org/10.1149/1.1393267.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Cimalla, I., Ch Foerster, V. Cimalla, V. Lebedev, D. Cengher, and O. Ambacher. "Wet chemical etching of AlN in KOH solution." physica status solidi (c) 3, no. 6 (June 2006): 1767–70. http://dx.doi.org/10.1002/pssc.200565206.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Shimozono, Naoki, Mikinori Nagano, Takaaki Tabata, and Kazuya Yamamura. "Study on In Situ Etching Rate Monitoring in Numerically Controlled Local Wet Etching." Key Engineering Materials 523-524 (November 2012): 34–39. http://dx.doi.org/10.4028/www.scientific.net/kem.523-524.34.

Full text

Abstract:

Numerically controlled local wet etching (NC-LWE) is very promising technique for deterministic figuring of ultraprecision optical devices, such as aspherical lens, photo mask substrate and X-ray or neutron focusing mirror. NC-LWE technique is non-contact removal process using chemical reaction between etchant and surface of workpiece, so this technique enables us to figure the objective shape without introduction both substrate deformation and sub-surface damage. It is essential to measure temperature and concentration of the etchant to maintain the material removal rate constant over a processing time, since the etching rate of NC-LWE strongly depends on these parameters. Hydrofluoric (HF) acid solution is used as an etchant for synthesized quartz glass. We aim to develop an in situ monitoring system of etchant concentration using Raman spectroscopy and electric conductivity measurement. Raman spectroscopy measurement result indicates that there is a good linear relationship between HF concentration and intensity ratio of two specific Raman bands.

APA, Harvard, Vancouver, ISO, and other styles

27

Kang, Min, Eun Duck Park, and Jae Eui Yie. "The Improvement of Chemical and Mechanical Properties of Al/Cu-Coated SiC Composites." Solid State Phenomena 124-126 (June 2007): 1145–48. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1145.

Full text

Abstract:

The effect of a microwave-enhanced wet chemical etching process of SiC particles on the electroless copper plating and on the Al/Cu-coated SiC composites was investigated. The microwave-enhanced wet etching process increased the concentration of surface oxides on SiC. The BET surface area of SiC increased, reached its maximum value at 30 s, and then decreased during an etching process. The enhanced chemical adhesion strength between the coated copper and SiC was observed after an etching process. Furthermore, the sintering density and transverse rupture strength (TRS) of Al/Cu-coated SiC composites were improved when SiC particles were etched. This result indicated that the microwave-enhanced etching of SiC particles also improved chemical and mechanical adhesion of Al/Cu-coated SiC composites.

APA, Harvard, Vancouver, ISO, and other styles

28

Liu, Wen Dar, Yi Chia Lee, Ryo Sekiguchi, Yukifumi Yoshida, Kana Komori, Kurt Wostyn, Farid Sebaai, and Frank Holsteyns. "Selective Wet Etching in Fabricating SiGe and Ge Nanowires for Gate-all-Around MOSFETs." Solid State Phenomena 282 (August 2018): 101–6. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.101.

Full text

Abstract:

A selective wet etching process for fabricating SiGe and Ge nanowires for gate all around transistors is introduced in this paper. Two formulated proprietary chemical mixtures with highly selective etching properties (Si vs. SiGe and SiGe vs. Ge) can effectively dissolve the sacrificial layers with minimal damage to the interstitial nanowire materials. The Auger Electron Spectroscopy (AES) surface characterization indicates that no chemical contamination is left after the wet etching process.

APA, Harvard, Vancouver, ISO, and other styles

29

Radjenovic, Branislav, and Marija Radmilovic-Radjenovic. "Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies." Chemical Industry 64, no. 2 (2010): 93–97. http://dx.doi.org/10.2298/hemind100205008r.

Full text

Abstract:

Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal <100>, <110>, <111> directions in KOH solutions. The calculations are performed using an extension of the sparse field method for solving three dimensional (3D) level set equations that describe the morphological surface evolution during etching process. The analysis of the obtained results confirm that regardless of the initial shape the profile evolution ends with the crystal form composed of the fastest etching planes, {110} in our model.

APA, Harvard, Vancouver, ISO, and other styles

30

Tang, Chao Wei, Li Chang Chuang, Hong Tsu Young, Mike Yang, and Hsueh Chuan Liao. "Robust Process Design towards through-Silicon via Quality Improvement Based on Grey-Taguchi Method." Applied Mechanics and Materials 217-219 (November 2012): 2183–86. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.2183.

Full text

Abstract:

The robust design of chemical etching parameters is dealing with the optimization of the through-silicon via (TSV) roundness error and TSV lateral etching depth in the etching of silicon for laser drilled TSVs. The considered wet chemical etching parameters comprise the HNO3 molarity, HF molarity, and etching time. Grey-Taguchi method is combining the orthogonal array design of experiments with Grey relational analysis (GRA), which enables the determination of the optimal combination of wet chemical etching parameters for multiple process responses. The concept of Grey relational analysis is to find a Grey relational grade, which can be used for the optimization conversion from a multiple objective case to a single objective case. Also, GRG is used to investigate the parameter effects to the overall quality targets.

APA, Harvard, Vancouver, ISO, and other styles

31

Kashkoush, Ismail, Jennifer Rieker, Gim Chen, and Dennis Nemeth. "Process Control Challenges of Wet Etching Large MEMS Si Cavities." Solid State Phenomena 219 (September 2014): 73–77. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.73.

Full text

Abstract:

Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentration and temperature, a large variety of silicon structures can be fabricated in a highly controllable and reproducible manner. Hence, anisotropic etching of <100> silicon has been a key process in common MEMS based technologies for realizing 3-D structures [1-4]. These structures include V-grooves for transistors, small holes for ink jets and diaphragms for MEMS pressure sensors as shown in Figure 1 [1]. The actual reaction mechanism has not been well understood and comprehensive physical and chemical models for the process have not yet been developed. With increasing numbers of MEMS applications, interest has grown in recent years for process modelling, simulation and software tools useful for the prediction of etched surface profiles [4-6].

APA, Harvard, Vancouver, ISO, and other styles

32

Stocker, D. A., E. F. Schubert, K. S. Boutros, and J. M. Redwing. "Fabrication of Smooth GaN-Based Laser Facets." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 799–804. http://dx.doi.org/10.1557/s1092578300003446.

Full text

Abstract:

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10}, {10}, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

APA, Harvard, Vancouver, ISO, and other styles

33

Shiman, O., V. Gerbreders, E. Sledevskis, and A. Bulanovs. "Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films." Latvian Journal of Physics and Technical Sciences 49, no. 2 (January 1, 2012): 45–50. http://dx.doi.org/10.2478/v10047-012-0010-8.

Full text

Abstract:

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.

APA, Harvard, Vancouver, ISO, and other styles

34

Stanton, N. M., A. J. Kent, P. Hawker, T. S. Cheng, C. T. Foxon, D. Korakakis, R. P. Campion, C. R. Staddon, and J. R. Middleton. "Photoenhanced wet chemical etching of MBE grown gallium nitride." Materials Science and Engineering: B 68, no. 1 (December 1999): 52–55. http://dx.doi.org/10.1016/s0921-5107(99)00416-x.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

DeSalvo, Gregory C., Christopher A. Bozada, John L. Ebel, David C. Look, John P. Barrette, Charles L. A. Cerny, Ross W. Dettmer, et al. "Wet Chemical Digital Etching of GaAs at Room Temperature." Journal of The Electrochemical Society 143, no. 11 (November 1, 1996): 3652–56. http://dx.doi.org/10.1149/1.1837266.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Wang, J., D. A. Thompson, and J. G. Simmons. "Wet Chemical Etching for V‐grooves into InP Substrates." Journal of The Electrochemical Society 145, no. 8 (August 1, 1998): 2931–37. http://dx.doi.org/10.1149/1.1838739.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Peng, L. H., C. W. Chuang, J. K. Ho, C. N. Huang, and C. Y. Chen. "Deep ultraviolet enhanced wet chemical etching of gallium nitride." Applied Physics Letters 72, no. 8 (February 23, 1998): 939–41. http://dx.doi.org/10.1063/1.120879.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Dorp, D. H. v., S. Arnauts, D. Cuypers, J. Rip, F. Holsteyns, and S. De Gendt. "Wet-Chemical Etching of InGaAs for Advanced CMOS Processing." ECS Transactions 58, no. 6 (August 31, 2013): 281–87. http://dx.doi.org/10.1149/05806.0281ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Young, Tao, Huaxiang Yin, Qiuxia Xu, Chao Zhao, Jun Feng Li, and Dapeng Chen. "Dummy Poly Silicon Gate Removal by Wet Chemical Etching." ECS Transactions 34, no. 1 (December 16, 2019): 361–64. http://dx.doi.org/10.1149/1.3567604.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Bock, K., A. Grüb, and H. L. Hartnagel. "Improved Thinning of GaAs Substrates by Wet Chemical Etching." Journal of The Electrochemical Society 137, no. 10 (October 1, 1990): 3301–2. http://dx.doi.org/10.1149/1.2086203.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Wochnowski, C., Y. Hanada, Y. Cheng, S. Metev, F. Vollertsen, K. Sugioka, and K. Midorikawa. "Femtosecond-laser-assisted wet chemical etching of polymer materials." Journal of Applied Polymer Science 100, no. 2 (2006): 1229–38. http://dx.doi.org/10.1002/app.23492.

Full text

APA, Harvard, Vancouver, ISO, and other styles

42

Malag, Andrzej, Jacek Ratajczak, and Jerzy Gazecki. "AlxGa−xAs/GaAs heterostructure characterization by wet chemical etching." Materials Science and Engineering: B 20, no. 3 (July 1993): 332–38. http://dx.doi.org/10.1016/0921-5107(93)90250-q.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Kolasinski, Kurt W., David Mills, and Mona Nahidi. "Laser assisted and wet chemical etching of silicon nanostructures." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24, no. 4 (July 2006): 1474–79. http://dx.doi.org/10.1116/1.2188414.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Ohashi, Naoki, Kenji Takahashi, Shunichi Hishita, Isao Sakaguchi, Hiroshi Funakubo, and Hajime Haneda. "Fabrication of ZnO Microstructures by Anisotropic Wet-Chemical Etching." Journal of The Electrochemical Society 154, no. 2 (2007): D82. http://dx.doi.org/10.1149/1.2402991.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

KAWASEGI, Noritaka, Noboru MORITA, Shigeru YAMADA, Noboru TAKANO, Tatsuo OYAMA, and Kiwamu ASHIDA. "Micro Fabrication by Tribo-Nanolithography and Wet Chemical Etching." Proceedings of The Manufacturing & Machine Tool Conference 2004.5 (2004): 139–40. http://dx.doi.org/10.1299/jsmemmt.2004.5.139.

Full text

APA, Harvard, Vancouver, ISO, and other styles

46

Hong, J., S. J. Pearton, W. S. Hobson, and H. Han. "Selective and non-selective wet chemical etching of GaAs0.93P0.07." Solid-State Electronics 39, no. 11 (November 1996): 1675–77. http://dx.doi.org/10.1016/0038-1101(96)00075-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Shikida, Mitsuhiro, Tatsuya Hasegawa, Kayo Hamaguchi, and Kazuo Sato. "Mechanical strengthening of Si cantilevers by chemical wet etching." Microsystem Technologies 19, no. 4 (August 12, 2012): 547–53. http://dx.doi.org/10.1007/s00542-012-1651-5.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Kashkoush, Ismail, Rich Novak, and Eric Brause. "In-Situ Chemical Concentration Control for Wafer Wet Cleaning." Journal of the IEST 41, no. 3 (May 14, 1998): 24–30. http://dx.doi.org/10.17764/jiet.41.3.f573u112344t8pr5.

Full text

Abstract:

This paper demonstrates the use of conductivity sensors to monitor and control the concentration of RCA cleaning and hydrofluoric acid (HF) etching solutions. Commercially available electrodeless conductivity sensors were used to monitor and control the concentration of these process solutions. A linear relationship between the conductivity of the solution and the chemical concentration was obtained within the range studied. A chemical injection scheme was developed to maintain the chemical concentration within specified limits. Different concentrations of RCA-based cleaning solutions and HF solutions were investigated. Results show that these techniques are suitable for monitoring and controlling the concentration of chemicals in the process tanks for better process control. These techniques provide low cost of ownership of the process by using dilute chemicals and longer bath life (i.e., a more environmentally sound process).

APA, Harvard, Vancouver, ISO, and other styles

49

Nie, Lei, Jun Xing Yu, and Kun Zhang. "Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching." Applied Mechanics and Materials 229-231 (November 2012): 2444–47. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.2444.

Full text

Abstract:

A multilayer masking technique was presented aiming at the requirements of deep isotropic silicon wet etching. Because the processing time of deep etching is relatively long and etching rate is high, it is very hard to achieve satisfying etching result by using conventional photoresist or metal single layer mask. Thus multilayer mask consisting of photoresist and metal layers is fabricated to exert respective advantages and avoid disadvantages. Based on its excellent chemical and thermal stabilities and high viscosity, Su-8 was selected as the material of photoresist layer. The metal layer was fabricated by chromium because it could alleviate the undercut problem in great extent. Results of etching experiment indicated that no obvious defect of pinhole or crack was found on this multilayer mask after etching to the depth of about 300μm. Thus it is undoubted this masking technology is capable for deep silicon wet etching.

APA, Harvard, Vancouver, ISO, and other styles

50

Li, Xiaochan, Wenliang Wang, Yulin Zheng, Yuan Li, Liegen Huang, Zhiting Lin, Yuefeng Yu, and Guoqiang Li. "Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films." CrystEngComm 20, no. 9 (2018): 1198–204. http://dx.doi.org/10.1039/c7ce02121f.

Full text

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!