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Relevant bibliographies by topics / Wet chemical semiconductor etching processes

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Journal articles

Academic literature on the topic 'Wet chemical semiconductor etching processes'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Wet chemical semiconductor etching processes"

1

VOSHCHENKOV, ALEXANDER M. "FUNDAMENTALS OF PLASMA ETCHING FOR SILICON TECHNOLOGY (PART 1)." International Journal of High Speed Electronics and Systems 01, no. 03n04 (1990): 303–45. http://dx.doi.org/10.1142/s0129156490000149.

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Over the past decade, as the rapid evolution of semiconductor technology has progressed towards submicron design rules, plasma (dry) etching has supplanted simple wet etching processes for the transfer of patterns. To understand the underlying need for development of plasma etching, a brief background of integrated semiconductor technology is presented. Along with a historical perspective of the evolution of plasma etching, the relationship of plasma etching to lithography needs, its basic characteristics and advantages over wet chemical processing are discussed. Following this, relevant conce

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2

Saito, Suguru, Yoshiya Hagimoto, Hayato Iwamoto, and Yusuke Muraki. "Mechanism of Plasma-Less Gaseous Etching Process for Damaged Oxides from the Ion Implantation Process." Solid State Phenomena 145-146 (January 2009): 227–30. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.227.

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Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on the etching properties of theses processes for various kinds of oxides and revealed that they reduce the etch rate of the chemical-vapor-deposited (CVD) oxides more than the conventional wet etching process does [1]. Our results also revealed that depressions called divots in the CVD oxide of the shallow trench isolation (STI) became smaller in size by substituting a plasma-less gaseous etching process for the conventional wet etching process. In semicon

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3

Patzig, Sebastian, Gerhard Roewer, Edwin Kroke, and Ingo över. "NOHSO4/HF – A Novel Etching System for Crystalline Silicon." Zeitschrift für Naturforschung B 62, no. 11 (2007): 1411–21. http://dx.doi.org/10.1515/znb-2007-1110.

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Solutions consisting of HF - NOHSO4 - H2SO4 exhibit a strong reactivity towards crystalline silicon which is controlled by the concentrations of the reactive species HF and NO+. Selective isotropic and anisotropic wet chemical etching with these solutions allows to generate a wide range of silicon surface morphology patterns. Traces of Ag+ ions stimulate the reactivity and lead to the formation of planarized (polished) silicon surfaces. Analyses of the silicon surface, the etching solution and the gas phase were performed with scanning electron microscopy (SEM), DR/FT-IR (diffusive reflection

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4

Dolah, Asban, Muhammad Azmi Abd Hamid, Mohamad Deraman, Ashaari Yusof, Nor Azhadi Ngah, and Norman Fadhil Idham Muhammad. "Ohmic Contact in P-HEMT Wafer Using Metallization with Ge/Au/Ni/Au." Advanced Materials Research 896 (February 2014): 351–53. http://dx.doi.org/10.4028/www.scientific.net/amr.896.351.

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In this study, Ohmic contact were fabricated on AlGaAs HEMTs structure. A good metal-semiconductor interface are essentially for achieving lower specific contact resistance. An AlGaAs epi wafer was supply by the vendor. AlGaAs substrate was cleaned using wet chemical etching. Electrodes were fabricated through a sequenced of lithography, cleaning, sputtering and lift-off processes. The electrodes were made with metal layers of Ge, Au and Ni. Parameters such as metal thickness, annealing temperatures (from 300°C to 400°C) and annealing time were varies during fabrication process. Electrical cha

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5

PEARTON, S. J. "HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART II–III–V COMPOUNDS." International Journal of Modern Physics B 08, no. 10 (1994): 1247–342. http://dx.doi.org/10.1142/s0217979294000592.

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The properties of hydrogen in III–V semiconductors are reviewed. Atomic hydrogen is found to passivate the electrical activity of shallow donor and acceptor dopants in virtually all III–V materials, including GaAs, Alx Ga1−x As, InP, InGaAs, GaP, InAs, GaSb, InGaP, AlInAs and AlGaAsSb. The passivation is due to the formation of neutral dopant-hydrogen complexes, with hydrogen occupying a bond-centered position in p-type semiconductors and an anti-bonding site in n-type materials. The dopants are reactivated by annealing at ≤400° C. The neutral hydrogen-dopant complexes have characteristic vibr

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6

Zhang, Zhi Yu, Xu Yang, and Li Gong Zheng. "Fabrication of Computer Generated Hologram for Aspheric Surface Measurement." Advanced Materials Research 1136 (January 2016): 620–23. http://dx.doi.org/10.4028/www.scientific.net/amr.1136.620.

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High-precision aspheric surfaces are generally measured using interferometer with a computer-generated holograms (CGH), which has a wavy line pattern fabricated onto a glass substrate. CGH patterns are generally made using lithographic techniques that was developed for semiconductor industry. Patterns can be subsequently etched into glass substrate using reactive ion or chemical etching. The accuracy of the drawn pattern on a CGH decides the accuracy of the measurement. Draw pattern error mainly includes the line-width deviation and its position error. In this paper, the influences of defocus

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7

Choi, Geun Min. "Necessity of Cleaning and its Application in Future Memory Devices." Solid State Phenomena 219 (September 2014): 3–10. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.3.

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Concerning the processes of the semiconductor industry, device integration is increasing and cell structure is becoming more complicated, which brings many new kinds of challenges. The basic requirements for a future integration device are minimum feature size reduction with device integration and high-speed operation with sufficient cell capacitance. Many kinds of conventional films including electrode and dielectric materials should be altered to meet device requirements. Moreover, as the allowance level for contaminants on substrate surfaces becomes more stringent, the importance of removin

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8

Collins, George, and Donald J. Rej. "Plasma Processing of Advanced Materials." MRS Bulletin 21, no. 8 (1996): 26–31. http://dx.doi.org/10.1557/s0883769400035673.

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A plasma, commonly referred to as the “fourth state of matter,” is an ensemble of randomly moving charged particles with a sufficient particle density to remain, on average, electrically neutral. While their scientific study dates from the 19th century, plasmas are ubiquitous, comprising more than 99% of the known material universe. The term “plasma” was first coined in the 1920s by Irving Langmuir at the General Electric Company after the vague resemblance of a filamented glow discharge to a biological plasma.Plasmas are studied for many reasons. Physicists analyze the collective dynamics of

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9

Causier, Alexandre, Isabelle Gérard, Muriel Bouttemy, Pierre Tran-Van, and Arnaud Etcheberry. "Fundamentals of III-V Semiconductor Electrochemistry and Wet Etching Processes: Br2 Etching Properties onto InP." ECS Transactions 35, no. 8 (2019): 61–66. http://dx.doi.org/10.1149/1.3567737.

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10

Ikossi‐Anastasiou, K., S. C. Binari, G. Kelner, et al. "Wet Chemical Etching with Lactic Acid Solutions for InP ‐ based Semiconductor Devices." Journal of The Electrochemical Society 142, no. 10 (1995): 3558–64. http://dx.doi.org/10.1149/1.2050022.

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