Relevant bibliographies by topics / Wet etching

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Wet etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 9 June 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Wet etching.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Wet etching"

1

Li, Hao, Yong You Geng, and Yi Qun Wu. "Selective Wet Etching Characteristics of Aginsbte Phase Change Film with Ammonium Sulfide Solution." Advanced Materials Research 529 (June 2012): 388–93. http://dx.doi.org/10.4028/www.scientific.net/amr.529.388.

Full text
Abstract:
The selective wet etching characteristics of AgInSbTe film as a new thermal lithography material were studied with ammonium sulfide solution as etchant. Influences of vacuum-annealing temperature, etchant concentration and wet etching time on selective wet etching characteristics of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicated that the etching rate of AgInSbTe film increased with the enhancement of crystallization extent, and the etching rate of crystalline state AgInSbTe film annealed at 300°C was 35nm/min in 17wt% ammonium sulfide solution, about 17.5 times as high as that of the amorphous state. Moreover, a good surface morphology of AgInSbTe film with roughness of less than 3 nm was attained in the area of 10×10 μm2 after wet-etching. The wet etching selectivity of the AgInSbTe film was strongly influenced by the annealing temperature and the etchant concentration.
APA, Harvard, Vancouver, ISO, and other styles
2

KATO, Kazunori. "Application of Wet Etching. Wet Etching-Theory and Application." Journal of the Surface Finishing Society of Japan 49, no. 10 (1998): 1031–37. http://dx.doi.org/10.4139/sfj.49.1031.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Lee, Changjin, Ji-Eun Lee, Eun-Woo Jang, Ji-Hoon Kim, Jinsub Park, and Jea-Gun Park. "Effect of Polymer Type Additives in Selective Wet Etching of Si1-XGex- to Si-Film to Enhance Etch Rate Selectivity." ECS Meeting Abstracts MA2024-02, no. 32 (November 22, 2024): 2303. https://doi.org/10.1149/ma2024-02322303mtgabs.

Full text
Abstract:
To extend the scalability of the logic transistor beyond the 3-nm process, the architecture of the metal-oxide-semiconductor field-effect transistor (MOSFET) has changed from FinFET to gate-all-around FET (GAAFET). In addition, to continue the scaling of MOSFET further, various concepts of nanosheet architecture devices, including GAAFET, Forksheet FET, and Complementary FET, have been vigorously researched. To fabricate nanosheet devices, releasing Si channels via selective etching of Si1-xGex- to Si-layer is a key process. However, during the selective etching of Si1-xGex- to Si-layer, simultaneous etching of Si- with Si1-xGex-layer is inevitable. Therefore, protecting the Si-layer while selective etching of the Si1-xGex-layer is a major challenge to acquire uniform channel layers (i.e., Si-layers). In this study, to protect the Si-layer during the selective wet etching of Si1-xGex- to Si-film, we came up with an idea based on the concept of selective chemisorption of polymers on Si- rather on Si1-xGex-film. Functional groups of polymers can chemisorb onto the Si surface, followed by building the hindrance layer that prohibits the etching of Si-film. Thus, we tested the effect of polymer type additives in selective wet etching of Si1-xGex- to Si-film depending on the functional groups (carboxylic group, amine group, alcohol group, etc.) and the molecular weight. To characterize the etching amount of the Si-film during the selective wet etching of Si1-xGex- to Si-film, the wet etching of epitaxially grown 3-periods of Si1-xGex/Si multilayer on Si substrate was performed followed by high-resolution transmission electron microscopy (HR-TEM) analysis. When using a specific type of polymer additive during wet etching, the etching amount of Si-film was >0.5 nm within 2 minutes, while that using without any additive was ~0.8 nm within 2 minutes, indicating that polymer type additive can produce the hindrance layer successfully onto Si-film preventing the etching of Si-film. The HR-TEM images depending on polymer types and mechanism of protecting Si-film during the selective wet etching of Si1-xGex- to Si-film will be presented in detail. Acknowledgement This work was supported by the Technology Innovation Program (20022475, Development of wet Etchant capable of high selection etching in microprocesses below 10 nm) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) References [1] Lee, Seung-Jae, et al. "Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm." Chemical Engineering Journal 475 (2023): 146257.
APA, Harvard, Vancouver, ISO, and other styles
4

Yusoh, Siti Noorhaniah, and Khatijah Aisha Yaacob. "Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography." Beilstein Journal of Nanotechnology 7 (October 17, 2016): 1461–70. http://dx.doi.org/10.3762/bjnano.7.138.

Full text
Abstract:
The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications.
APA, Harvard, Vancouver, ISO, and other styles
5

Kikkawa, Yuki, Yuzan Suzuki, Kohei Saito, Hiroto Yarimizu, Satoko Kanamori, Tomoaki Sato, and Toru Nagashima. "Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes." Solid State Phenomena 346 (August 14, 2023): 325–30. http://dx.doi.org/10.4028/p-08chsp.

Full text
Abstract:
Wet chemicals for ruthenium (Ru) etching are required for the formation of reliable Ru interconnects in advanced semiconductor technology nodes. In the present study, a novel alkali wet etchant, referred to as TK-1, has been developed in order to overcome issues with conventional Ru etchants, such as a low etch rate and the formation of toxic RuO4 gas. Regardless of the Ru deposition process, TK-1 exhibits a high Ru etching selectivity of greater than 100 relative to dielectric and liner materials. It also suppresses the production of RuO4 during the etching process. TK-1 has potential applications for Ru recess etching during fully self-aligned via fabrication.
APA, Harvard, Vancouver, ISO, and other styles
6

Ding, Jingxiu, Ruipeng Zhang, Yuchun Li, David Wei Zhang, and Hongliang Lu. "Investigation of a Macromolecular Additive on the Decrease of the Aluminum Horizontal Etching Rate in the Wet Etching Process." Metals 12, no. 5 (May 8, 2022): 813. http://dx.doi.org/10.3390/met12050813.

Full text
Abstract:
The effect of a macromolecular additive on the etching rate of aluminum (Al) horizontal etching in the wet process was investigated in this work. The horizontal etching in the Al wet etching process became more evident as the film Al becomes thicker. The proposed macromolecule additive, including polyethylene-polypropylene glycol, was added into the Al etchant solution to reduce the Al horizontal etching rate (ER). The undercut problem during metal patterning can then be improved. By using this method, the Al horizontal ER was reduced from 2.0 to 0.9 μm per minute and the selection ratio between the horizontal and vertical ER was effectively improved from 3 to 1.3 times. As well, a hypothesis of physical mechanism for the improvement was proposed. The dispersed particles from the additive emulsion inhibited the transport and exchange of liquid in a horizontal direction. This work provides an alternative reference to improve the selection ratio performance in the metal wet etching process compared with that when using traditional method.
APA, Harvard, Vancouver, ISO, and other styles
7

Ueda, Dai, Yousuke Hanawa, Hiroaki Kitagawa, Naozumi Fujiwara, Masayuki Otsuji, Hiroaki Takahashi, and Kazuhiro Fukami. "Effect of Hydrophobicity and Surface Potential of Silicon on SiO2 Etching in Nanometer-Sized Narrow Spaces." Solid State Phenomena 314 (February 2021): 155–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.155.

Full text
Abstract:
Wet etching in nanometer-sized three-dimensional spaces creates new challengesbecause of the scaling of semiconductor devices with complex 3D architecture. Wet etching withinspaces is affected by the mass transport of the etchant ions that are impacted by the hydrophobicityand surface potential of surface. However, the kinetics of chemical reactions within the spaces is stillunclear.In this paper, we studied the effect of hydrophobicity and surface potential of silicon surface on SiO2etching in nanometer-sized narrow spaces by adding various additive components to etching solutions.We found that the transport of etchant ions into narrow spaces is governed by controlling thehydrophobicity and surface potential of the confined system walls.
APA, Harvard, Vancouver, ISO, and other styles
8

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

Full text
Abstract:
In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH anisotropic etching significantly reduces the notching effect contributed by the macroscopic roughness. Upon the completion of microcantilever release, suspended microcantilever of 2μm thick is realized with the removal of SiO2layer using Buffered Oxide Etching (BOE).
APA, Harvard, Vancouver, ISO, and other styles
9

Çakır, Orhan. "Review of Etchants for Copper and its Alloys in Wet Etching Processes." Key Engineering Materials 364-366 (December 2007): 460–65. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.460.

Full text
Abstract:
Wet etching processes have been widely used for producing micro-components for various applications. These processes are simple and easy to implement. The selection of suitable chemical solution which is called etchant is the most important factor in the wet etching processes. It affects etch rate and surface finish quality. Copper and its alloys are important commercial materials in various industries, especially in electronics industry. Their wide applications are due to their excellent electrical and thermal conductivity, ease of fabrication, good strength and fatigue properties. The present study examines the possible etchants for copper and its alloys and reviews studies in detail to find out optimum etchant and its application parameters. The study is also aimed to provide information about safety, health and environmental issues caused by using various etchants in wet etching processes of copper and copper alloys.
APA, Harvard, Vancouver, ISO, and other styles
10

Rath, P., J. C. Chai, Y. C. Lam, V. M. Murukeshan, and H. Zheng. "A Total Concentration Fixed-Grid Method for Two-Dimensional Wet Chemical Etching." Journal of Heat Transfer 129, no. 4 (October 21, 2006): 509–16. http://dx.doi.org/10.1115/1.2709654.

Full text
Abstract:
A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely—the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation with prescribed initial and boundary conditions. The effects of reaction rate at the etchant–substrate interface are examined. The results obtained using the total concentration method, are compared with available results from the literature.
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Wet etching"

1

Edström, Curt. "Wet etching of optical thin films." Thesis, Tekniska Högskolan, Högskolan i Jönköping, JTH, Kemiteknik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hj:diva-13988.

Full text
Abstract:
Evaluation of the wet etching properties of several different thin film oxidesgrown by physical vapour deposition was performed in this work. MgO, Al2O3,SiO2, TiO2, HfO2 ZrO2 and Y2O3 were coated on two types of substrates; Si andborosilicate glass and etching tests were performed in different etchingsolutions. MgF2 thin films have also been evaluated. Important aspects of the choice of the thin films was taken into account in orderto match to good optical properties such as refractive index (n), extinction coefficient (k) and optical thickness (TP) as well as good chemical properties in the wet etching process. A description is made of the physics of optical filters and how a combination of different oxides stacked onto each other can create interference filters. A description of the manufacturing process of the thin films where physical vapour deposition (PVD) was used is presented. Thermal shift of the optical spectra caused by porous coatings was investigated and analyses of the thin films by ellipsometry, surface profilometry and transmission spectrophotometry have been performed. The wet etching properties were evaluated by monitoring the transmission insituon transparent borosilicate glass substrates. A method of how to measure the wet etching rate for different thin films is described. A computer software was used to calculate the Pourbaix diagrams in order to understand the chemical behaviour of the etching solutions. The pH can have a significant impact on the etching behaviour. In case of TiO2, it can be dissolved in an alkaline solution of H2O2. The catalytically process behind this is evaluated. Etching rate for both Y2O3 andSiO2 were matched by adjusting the etchant concentration as a case example. The group IVB oxides are difficult to etch. The catalytic etching of TiO2 with peroxide is slow but detectable. Al2O3, Y2O3 and MgO are reasonably easy to etch but have too low refractive indices to be useful in multilayer optical filters. The In-situ etching instrument was found to be very useful for measuring etching rates.<br>Utvärdering av våtkemiska egenskaper för flera olika oxidtunnfilmer utfördes idetta arbete på tunnfilmer av MgO, Al2O3, SiO2, TiO2, HfO2 ZrO2 and Y2O3 vakuumdeponerade på både kiselwafers och borosilikatglas. Etstester gjordes med ett flertal etslösningar. Även MgF2-tunnfilmer utvärderades. Både optiska och kemiska egenskaper togs i beaktande vid utvärderingen av tunnfilmerna. De optiska lagar som gäller för tunnfilmer redovisas, bl a hur kombinationer av olika oxider kan skapa interferrensfilter. En beskrivning av tillverkningsprocessen varvid PVD användes presenteras. Termiskt skift av det optiska transmissionsspektrat orsakat av porositet undersöktes. Analyser av tunnfilmerna med ellipsometri, profilometri och transmissions spektroskopi utfördes. Våtetsningsegenskaperna utvärderades genom att mäta in-situ vid etsprocessen på transparenta borosilikatglassubstrat. Metoden för att mäta etshastigheten för olika oxider är beskriven. Datorberäkningar av pourbaixdiagram användes för att skapa en förståelse av de kemiska egenskaperna för etslösningarna. Etsegenskaperna påverkas till stordel av lösningens pH. TiO2 kan etsas i basisk lösning av peroxid. Denna process utvärderades, likaså utvärderades etshasigheten för Y2O3 och SiO2 för att erhålla matchande par avoxider som en fallstudie. Grupp IVB oxiderna är mycket svåra att etsa. Katalytisk etsning av TiO2 med peroxid är detekterbar men långsam. Al2O3, Y2O3 och MgO är förhållandevis enkla att etsa men har för låga brytningsindex för att var praktiskt använbara i optiska multilagerfilter. In-situ etsinstrumentet befanns vara ett utmärkt verktyg för att mäta etshastigheten för tunnfilmer.
APA, Harvard, Vancouver, ISO, and other styles
2

Duan, Xuefeng 1981. "Microfabrication : using bulk wet etching with TMAH." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97942.

Full text
Abstract:
In November 2002 a Microfabrication Lab was established in the physics department of McGill University to support research in nanoscience and technology. At the same time, I arrived at McGill to begin my graduate study. So I was assigned to do research on microfabrication, especially bulk wet etching of silicon using TetraMethyl Ammonium Hydroxide (TMAH).<br>The content of microfabrication is quite broad, and also very useful in both industry and academic. Since our fab is a newly built one and I had no experience in this area before, this thesis mainly included some basic processes in microfabrication, such as the photolithography, wet etching, reactive ion etching, and soon. Also it compared the wet etching with dry etching. Some results of TMAH wet etching were showed in the thesis, which agreed well with that of the other groups. A simulation program was developed to predict the etching result of TMAH and it appeared to work well. Finally, based on the knowledge and experience acquired, processes in making cantilever and tip structures, which are critical in the scanning probe microscopes, were developed. Silicon oxide cantilevers with length of 100-200 mum, width of 30-50 mum, and thickness of 1 mum were obtained. Pyramid like silicon tips were also fabricated using the wet etching.
APA, Harvard, Vancouver, ISO, and other styles
3

Pal, P., K. Sato, M. A. Gosalvez, M. Shikida, and 一雄 佐藤. "An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask." IEEE, 2008. http://hdl.handle.net/2237/11137.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Cui, Ziruo. "Wet Etching Optical Fibers to Sub-micron Diameters for Sensing Application." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1397801129.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Dave, Neha H. (Neha Hemang). "Removal of metal oxide defects through improved semi-anisotropic wet etching process." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/78167.

Full text
Abstract:
Thesis (M. Eng. in Manufacturing)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 52).<br>Data recently collected from an industrial thin film manufacturer indicate that almost 8% of devices are rejected due to excess metal, or unwanted metal on the device surface. Experimentation and analysis suggest that almost half of these defects are caused by incomplete removal of nickel oxides that form on top of the conductive nickel surface throughout the heated environment of the upstream process. This study classified and identified the composition of these excess metal defects, evaluated recommended wet etch methods to remove nickel oxide, and finally proposes a wet etch process that will rapidly remove defects while continuing to maintain the desired semi-anisotropic etch profile, uncharacteristic of most wet immersion etch processes. Results attested that rapid exposure to dilute (40%) nitric acid followed by immediate immersion into a cleaning agent, proprietary nickel etchant, and titanium tungsten etchant removed all nickel oxide defects. Upon implementation, this method has the potential to reduce scrap due to excess metal by 3% and reduce overall etch process time by 25%. In addition, a process was developed to completely etch patterned substrates with high defect density mid process and rework them from raw substrates.<br>by Neha H. Dave.<br>M.Eng.in Manufacturing
APA, Harvard, Vancouver, ISO, and other styles
6

Lopes, Silvia Elisabeth Sauaia. "Sistema de controle microprocessado para tanques para Wet-etching/cleaning em microeletronica." [s.n.], 1996. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259325.

Full text
Abstract:
Orientador: Jose Antonio Siqueira Dias<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica<br>Made available in DSpace on 2018-07-21T10:43:13Z (GMT). No. of bitstreams: 1 Lopes_SilviaElisabethSauaia_M.pdf: 6529088 bytes, checksum: 94361c93b2fa30ab34622f13f5d2b5f3 (MD5) Previous issue date: 1996<br>Resumo: Tanques para banho à temperatura constante necessitam de um sistema de controle para monitoração e controle de sua temperatura de operação e demais funções. O controle da temperatura deve ser rígido e preciso; condições de alarme e desligamento automático devem ser previstos. O presente trabalho pretende estudar, implementar e testar um protótipo de um sistema de controle microprocessado para tais tanques. Este trabalho apresenta um controlador digital do tipo PID, baseado na arquitetura do microcontrolador 8051 da Intel, com aIto desempenho, robusto, eficiente e simples, características estas comprovadas através de testes práticos realizados no final do projeto<br>Abstract: Tanks for constant temperature bath need a temperature and related functions moni toring and control system. Temperature control must be constant and precise; alarm and automatic switching off conditions must be provided. This work is to study, implement and test a microprocessor controller's prototype for such tanks. This work presents a digital controller with a PID control scheme, based in the architecture of the Intel' s 8051 microcontroller, with high performance, strong, efficient and simple, characteristics verified through practical tests made at the end of the project<br>Mestrado<br>Mestre em Engenharia Elétrica
APA, Harvard, Vancouver, ISO, and other styles
7

Zhang, Nikai. "Planar Waveguide Solar Concentrator with Couplers Fabricated by Laser-Induced Backside Wet Etching." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1384365115.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Ghalichechian, Nima. "Integration of benzocyclobutene polymers and silicon micromachined structures fabricated with anisotropic wet etching." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2361.

Full text
Abstract:
Thesis (M.S.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
APA, Harvard, Vancouver, ISO, and other styles
9

Zhuang, Dejin. "Wet etching studies of ALN bulk crystals and their sublimation growth by microwaves /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Sudirham, Janivita Joto. "Space-time discontinuous Galerkin methods for convection-diffusion problems application to wet-chemical etching /." Enschede : University of Twente [Host], 2005. http://doc.utwente.nl/50890.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Wet etching"

1

Flora, Paul. Auf und davon: Radierungen. Hohenems: Bucher, 2009.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
2

Horst, Janssen. Horst Janssen: Drawings and etchings, April 3 to May 12, 1990. New York: Claude Bernard Gallery, 1990.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
3

Pissarro, Camille. Camille Pissarro: Ferrara, Palazzo dei diamanti, 15 febbraio-10 maggio 1998. Ferrara: Ferrara arte, 1998.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Pissarro, Camille. Camille Pissarro: Obras de Venezuela y Francia en blanco y negro. Caracas: Museo de Bellas Artes, Banco Cenral de Venezuela, 1997.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

Pissarro, Camille. Camille Pissarro: Impressionist innovator. Jerusalem: The Israel Museum, 1994.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

Degenhardt, Gertrude. Gertrude Degenhardt, farewell to Connaught: 65 Kaltnadel-Radierungen von der irischen Westküste = 65 drypoint etchings of the Irish West Coast. Mainz: Edition GD, 1989.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

1929-, Schack Gerhard, and Germanisches Nationalmuseum Nürnberg, eds. Horst Janssen: The portrait, a selection from 1945 to 1994 : woodcuts, etchings, lithography, drawings, watercolours. [S.l.]: Verlag St. Gertrude, 1998.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Cowern, R. T. A retrospective exhibition of etchings and water colours by R.T. Cowern R.A., R.E., RWA, 18 January-20 February 1988, Royal West of England Academy, Queen's Road, Clifton, Bristol. Bristol: Royal West of England Academy, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

Mukherjee, Sayan D. Wet and Dry Etching Technology for Devices and Integrated Circuits (Iee Materials and Devices Series). Inspec/Iee, 1995.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Dittrich, Joshua. Geosonics. Bloomsbury Publishing Inc, 2024. http://dx.doi.org/10.5040/9798765104606.

Full text
Abstract:
How do we listen to the earth? That is the central question posed inGeosonics: Listening Through Earth's Soundscapes. Working across sound studies, media theory, and environmental media studies, Joshua Dittrich explores the material and metaphorical geology of the sonic environment. In an epoch of climate crisis, environment is no longer a neutral background, site, or simple “surrounding”: environment is immanently implicated in the chains of mediation that make up the material and imaginative infrastructure of our lives. The analytical task ofGeosonicsis to tune into that infrastructure through sound. Drawing on influential work in sound studies around the concept of transduction, this book explores how listening does not take place in a pre-existing soundscape, but rather makes place by etching out a mediated, mutually constitutive set of relations between listeners, media, and environments.
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Wet etching"

1

Cheng, Hua-Chi. "Wet Etching." In Handbook of Visual Display Technology, 1331–41. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_59.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Cheng, Hua-Chi. "Wet Etching." In Handbook of Visual Display Technology, 1–9. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-35947-7_59-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Cheng, Hua-Chi. "Wet Etching." In Handbook of Visual Display Technology, 861–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-540-79567-4_59.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Mann, Richard P., Avinash P. Nayak, M. Saif Islam, V. J. Logeeswaran, Edward Bormashenko, Kerry Allan Wilson, and Frank Vollmer. "Wet Etching." In Encyclopedia of Nanotechnology, 2829–30. Dordrecht: Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-90-481-9751-4_431.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Longoni, Gianluca, Davide Assanelli, and Cinzia De Marco. "Wet Etching and Cleaning." In Silicon Sensors and Actuators, 259–92. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Jodai, Kazuo. "Wet Etching Processes and Equipment." In Flat Panel Display Manufacturing, 311–18. Chichester, UK: John Wiley & Sons Ltd, 2018. http://dx.doi.org/10.1002/9781119161387.ch14_01.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Sarangan, Andrew. "Wet Chemical and Plasma Etching." In Nanofabrication, 209–40. Boca Raton : CRC Press, Taylor & Francis Group, 2017. | Series: Optical sciences and applications of light: CRC Press, 2016. http://dx.doi.org/10.1201/9781315370514-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Knotter, D. Martin. "The Chemistry of Wet Etching." In Handbook of Cleaning in Semiconductor Manufacturing, 95–141. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118071748.ch3.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Ombaba, Mathew, Salman B. Inayat, and M. Saif Islam. "Wet Chemical and Electrochemical Etching Processes." In Encyclopedia of Nanotechnology, 1–9. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-6178-0_431-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Ombaba, Mathew, Salman B. Inayat, and M. Saif Islam. "Wet Chemical and Electrochemical Etching Processes." In Encyclopedia of Nanotechnology, 4373–80. Dordrecht: Springer Netherlands, 2016. http://dx.doi.org/10.1007/978-94-017-9780-1_431.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Wet etching"

1

Lin, Hong-Lin, Pragati Aashna, Yu Cao, and Aaron Danner. "Single-mode waveguides in barium titanate-on-insulator platform fabricated by wet etching." In CLEO: Science and Innovations, SW4R.6. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sw4r.6.

Full text
Abstract:
We present, for the first time, single-mode single-crystal barium titanate waveguides on insulator, achieved through a wet-etching method. This etching approach opens new possibilities for the development of barium-titanate-based integrated optical devices.
APA, Harvard, Vancouver, ISO, and other styles
2

Zhang, Yuqian, Changzheng Sun, Bing Xiong, Lai Wang, Zhibiao Hao, Jian Wang, Yanjun Han, Hongtao Li, Lin Gan, and Yi Luo. "High Q Suspended AlGaAs Microresonators for Kerr Comb Generation." In CLEO: Science and Innovations, SM1M.3. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sm1m.3.

Full text
Abstract:
Suspended AlGaAs microring resonators are formed by combined plasma dry etching and chemical wet etching, exhibiting an intrinsic Q factor exceeding 1 million. Kerr comb generation with milliwatt level pump power is recorded.
APA, Harvard, Vancouver, ISO, and other styles
3

Bidney, Grant W., Joshua M. Duran, Gamini Ariyawansa, Igor Anisimov, and Vasily N. Astratov. "The World of Microphotonic Arrays Enabled by Anisotropic Wet Etching of Silicon." In CLEO: Applications and Technology, ATh1J.6. Washington, D.C.: Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_at.2024.ath1j.6.

Full text
Abstract:
It is shown that microphotonic arrays fabricated by anisotropic wet etching of silicon have properties which make them uniquely suitable for enhancing photodetector, emitter, or resonator arrays in different silicon photonics applications.
APA, Harvard, Vancouver, ISO, and other styles
4

Hasan, Md Mahmudul, and Faiz Rahman. "Aqueous Wet Etching of Silicon With Alkali Metal Hydroxides." In ASME 2024 19th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2024. http://dx.doi.org/10.1115/msec2024-131691.

Full text
Abstract:
Abstract Silicon etching is a process that is regularly employed in the semiconductor industry for many applications ranging from micromachining on the sub-millimeter scale to intricate pattern formation in tens of nanometer regime. Wet etching is used for bulk silicon removal. Such etching processes, generally, involve multiple chemical reactions where a liquid solution of etching agents removes surface atoms of silicon through chemical or electrochemical redox reactions at the substrate-etchant interface. Many wet etching processes are anisotropic, and thus the wet etching of silicon with hydroxide solutions tends to be direction or crystalline plane specific, allowing for directional control and reduced undercutting of any etch mask. An additional advantage of metal hydroxide etchants rise from their selective nature of extremely poor etch rate towards the basic oxide of silicon. This makes growing the hard mask of SiO2 a very cost effect step in the wet etching process. NaOH and KOH solutions are well known wet etching agents that offer inexpensive alternatives to anisotropic dry etching but are often either difficult to control (etch rate-wise) or result in rough etched surfaces. Only through better understanding of the chemical reaction mechanisms, i.e. the role of alkali metal cations and water molecules during the wet etching process more controllability and desired etch surface profiles can be achieved. This study summarizes the results from a series of wet etch processes with all the five different group 1 alkali metal oxides and discusses in detail how different types of group 1 metal ions impact the dynamics of the chemical reactions in the aqueous medium. Wet etching assisted by smaller cations like Li+ tend to be more controllable while larger cations like Cs+ result in much faster etch rates. Surfactants added to fast etching metal hydroxides result in finer sidewalls and smoothened etched surface on silicon. Later in the paper, the effect of microwave irradiation on the surface tension, structural arrangement of water molecules and its application in anisotropic etching are highlighted. Step by step details of the experiments are provided in the materials and methods section making the study easy to understand. Line profile plots, optical images, SEM micrographs and XRD intensity plots are presented throughout the report to support the given explanations. Research findings from the study experimentally establish a trend for anisotropic etch rates of silicon substrate with aqueous solutions of all the group 1 alkali metal hydroxides. Silicon etch rate increases down the group.
APA, Harvard, Vancouver, ISO, and other styles
5

Shayan, Mohsen, Behrooz Arezoo, and Ali Amani. "Optimization of Concentration and Temperature of KOH Etchant on Micromachining Process." In ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2010. http://dx.doi.org/10.1115/esda2010-25226.

Full text
Abstract:
Due to vast application of silicon wet etching in Micromachining and MEMS structure, investigation about parameters that have more influence on wet etch rate is indispensable. Wet etch rate is dependent to several factor such as temperature, etchant concentration and crystal orientation. Because of temperature and concentration are more controllable therefore the etch rates R{hkl} depend mainly on concentration and temperature of the etchant. Understanding the relation between this parameters and wet etch rate can assist us in order to control and optimization of micromachining process. This paper present a relation between etchant concentration and temperature and wet etch rate on (100) plane, and then identify the etchant concentration in a certain range of temperature as the wet etch rate be in optimal amount. With optimization the etch rate of wafer (100), necessary time for etching process reduces and this reduction of time can lead to reduction of undercutting at convex and concave corners.
APA, Harvard, Vancouver, ISO, and other styles
6

Parish, Giacinta, Paul A. Scali, Sue M. Spaargaren, and Brett D. Nener. "Simple wet etching of GaN." In International Symposium on Microelectronics and MEMS, edited by Jung-Chih Chiao, Lorenzo Faraone, H. Barry Harrison, and Andrei M. Shkel. SPIE, 2001. http://dx.doi.org/10.1117/12.448955.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Lee, Suk Ho, Chan Hee Park, Seung Joon Cha, Eun Cheol Lee, and Kyu Shik Hong. "Simple and Effective Technique of Backside Deprocessing of Thin Flip Chip Package." In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0501.

Full text
Abstract:
Abstract This paper introduces a simple and effective technique of backside de-processing procedure. This technique reduces time and steps by simple wet etching. The front-side deprocessing requires many steps, such as wet and dry etching and parallel lapping, and also backside de-processing requires mechanical grinding to thin down the silicon thickness before wet etching. This paper introduces an effective way by skipping mechanical grinding and by etching at high temperature in case of thin flip chip. The backside silicon images are presented and compared after de-processing with TMAH and KOH which commonly have been used for bulk silicon etchant. The results show uniform backside images without any damage or residue. This backside de-processing technique was applied in two case studies to facilitate failure analysis.
APA, Harvard, Vancouver, ISO, and other styles
8

Rath, P., J. C. Chai, H. Y. Zheng, Y. C. Lam, and V. M. Murukeshan. "A Total-Concentration Fixed-Grid Method for Two-Dimensional Diffusion-Controlled Wet Chemical Etching." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72186.

Full text
Abstract:
This article presents a total concentration method for two-dimensional wet chemical etching. The proposed procedure is a fixed-grid approach. It is analogous to the enthalpy method used for modeling melting/solidification problems. The governing equation is formulated using the total concentration of the etchant. It includes the reacted and the unreacted concentrations of the etchant. The proposed governing equation includes the interface condition. The reacted concentration is used to capture the etchant-substrate interface implicitly. Since the grids are fixed, a diffusion problem remains a diffusion problem unlike the moving grid approach where the diffusion problem becomes the convection-diffusion problem due to the mesh velocity. For demonstration purposes, the finite volume method is used to solve for the transient concentration distribution of etchant. In this article, two-dimensional diffusion-controlled wet chemical etching processes are modeled. The results obtained from the proposed total concentration method are compared with available “analytic” solutions and solutions from moving-grid approach.
APA, Harvard, Vancouver, ISO, and other styles
9

Kaneko, Kimihisa, Tomoyoshi Noda, Masayoshi Sakata, and Tomomi Uchiyama. "Observation and Numerical Simulation for Wet Chemical Etching Process of Semiconductor." In ASME/JSME 2003 4th Joint Fluids Summer Engineering Conference. ASMEDC, 2003. http://dx.doi.org/10.1115/fedsm2003-45707.

Full text
Abstract:
This paper concerns with the basic investigations on the wet chemical etching of semiconductors. First, a method to observe the etched cross-section of aluminum layer is developed. It is applied to the observation for the cross-section of a test piece etched in a quiescent etchant. The observation successfully makes clear the time variation for the geometry of the etched cross-section, and elucidates the effects of the resist width on the geometry. Secondly, the numerical simulation for the etching process is performed. The simulated geometry of the etched cross-section is confirmed to agree with the observed result, indicating that the present numerical simulation is effectively used to predict the geometry of the etched cross-section.
APA, Harvard, Vancouver, ISO, and other styles
10

Mao, Wenbo, Di Jia, Kashif M. Awan, Fu Li, and Lan Yang. "Integrated Lithium-Niobate Nonlinear Photonics Enabled by Wet-Etching Technology." In Frontiers in Optics. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/fio.2023.jm4a.56.

Full text
Abstract:
We demonstrated various chip-scale lithium-niobate nonlinear-optical devices using wet etching fabrication techniques. The low-cost wet etching process achieves device performance comparable to widely used dry processes.
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Wet etching"

1

Rushford, M., S. Dixit, R. Hyde, J. Britten, J. Nissen, M. Aasen, J. Toeppen, et al. Development of Wet-Etching Tools for Precision Optical Figuring. Office of Scientific and Technical Information (OSTI), January 2004. http://dx.doi.org/10.2172/15007304.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Riley, Brian J., S. K. Sundaram, Bradley R. Johnson, and Laxmikant V. Saraf. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography. Office of Scientific and Technical Information (OSTI), December 2006. http://dx.doi.org/10.2172/1031443.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Hunt, C., and J. Trujillo. Silicon field emission points for vacuum IC's by wet chemical etching. Office of Scientific and Technical Information (OSTI), March 1990. http://dx.doi.org/10.2172/7032264.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Snyder, Paul G. Real Time Optical Monitoring of III-V Semiconductor Wet Chemical Etching. Fort Belvoir, VA: Defense Technical Information Center, December 2000. http://dx.doi.org/10.21236/ada387435.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Hui, Wing C. Technique for protecting chip corners in wet chemical etching of silicon wafers. Office of Scientific and Technical Information (OSTI), February 1991. http://dx.doi.org/10.2172/10169930.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Mistkawi, Nabil. Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Britten, J. Wet-Etch Figuring Optical Figuring by Controlled Application of Liquid Etchant. Office of Scientific and Technical Information (OSTI), February 2001. http://dx.doi.org/10.2172/15013516.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Keller, Jonathan. WhiteWind: White Etching Crack (WEC) Bearing Failures in Wind Turbine: Cooperative Research and Development Final Report, CRADA Number CRD-18-00758. Office of Scientific and Technical Information (OSTI), October 2021. http://dx.doi.org/10.2172/1826533.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Wet etching' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography