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Dissertations / Theses on the topic 'Wet etching'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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1

Edström, Curt. "Wet etching of optical thin films." Thesis, Tekniska Högskolan, Högskolan i Jönköping, JTH, Kemiteknik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hj:diva-13988.

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Evaluation of the wet etching properties of several different thin film oxidesgrown by physical vapour deposition was performed in this work. MgO, Al2O3,SiO2, TiO2, HfO2 ZrO2 and Y2O3 were coated on two types of substrates; Si andborosilicate glass and etching tests were performed in different etchingsolutions. MgF2 thin films have also been evaluated. Important aspects of the choice of the thin films was taken into account in orderto match to good optical properties such as refractive index (n), extinction coefficient (k) and optical thickness (TP) as well as good chemical properties in the w
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2

Duan, Xuefeng 1981. "Microfabrication : using bulk wet etching with TMAH." Thesis, McGill University, 2005. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=97942.

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In November 2002 a Microfabrication Lab was established in the physics department of McGill University to support research in nanoscience and technology. At the same time, I arrived at McGill to begin my graduate study. So I was assigned to do research on microfabrication, especially bulk wet etching of silicon using TetraMethyl Ammonium Hydroxide (TMAH).<br>The content of microfabrication is quite broad, and also very useful in both industry and academic. Since our fab is a newly built one and I had no experience in this area before, this thesis mainly included some basic processes in microfa
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3

Pal, P., K. Sato, M. A. Gosalvez, M. Shikida, and 一雄 佐藤. "An improved anisotropic wet etching process for the fabrication of silicon MEMS structures using a single etching mask." IEEE, 2008. http://hdl.handle.net/2237/11137.

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4

Cui, Ziruo. "Wet Etching Optical Fibers to Sub-micron Diameters for Sensing Application." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1397801129.

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5

Dave, Neha H. (Neha Hemang). "Removal of metal oxide defects through improved semi-anisotropic wet etching process." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/78167.

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Thesis (M. Eng. in Manufacturing)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2012.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references (p. 52).<br>Data recently collected from an industrial thin film manufacturer indicate that almost 8% of devices are rejected due to excess metal, or unwanted metal on the device surface. Experimentation and analysis suggest that almost half of these defects are caused by incomplete removal of nickel oxides that form on top of the conductive nickel surface throughout the heated environment of the upstrea
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6

Lopes, Silvia Elisabeth Sauaia. "Sistema de controle microprocessado para tanques para Wet-etching/cleaning em microeletronica." [s.n.], 1996. http://repositorio.unicamp.br/jspui/handle/REPOSIP/259325.

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Orientador: Jose Antonio Siqueira Dias<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica<br>Made available in DSpace on 2018-07-21T10:43:13Z (GMT). No. of bitstreams: 1 Lopes_SilviaElisabethSauaia_M.pdf: 6529088 bytes, checksum: 94361c93b2fa30ab34622f13f5d2b5f3 (MD5) Previous issue date: 1996<br>Resumo: Tanques para banho à temperatura constante necessitam de um sistema de controle para monitoração e controle de sua temperatura de operação e demais funções. O controle da temperatura deve ser rígido e preciso; condições de alarme e desligamento au
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7

Zhang, Nikai. "Planar Waveguide Solar Concentrator with Couplers Fabricated by Laser-Induced Backside Wet Etching." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1384365115.

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8

Ghalichechian, Nima. "Integration of benzocyclobutene polymers and silicon micromachined structures fabricated with anisotropic wet etching." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/2361.

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Thesis (M.S.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Dept. of Electrical and Computer Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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9

Zhuang, Dejin. "Wet etching studies of ALN bulk crystals and their sublimation growth by microwaves /." Search for this dissertation online, 2004. http://wwwlib.umi.com/cr/ksu/main.

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10

Sudirham, Janivita Joto. "Space-time discontinuous Galerkin methods for convection-diffusion problems application to wet-chemical etching /." Enschede : University of Twente [Host], 2005. http://doc.utwente.nl/50890.

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11

Mistkawi, Nabil George. "Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices." PDXScholar, 2010. https://pdxscholar.library.pdx.edu/open_access_etds/6.

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As multistep, multilayer processing in semiconductor industry becomes more complex, the role of cleaning solutions and etching chemistries are becoming important in enhancing yield and in reducing defects. This thesis demonstrates successful formulations that exhibit copper and tungsten compatibility, and are capable of Inter Layer Dielectric (ILD) cleaning and selective Ti etching. The corrosion behavior of electrochemically deposited copper thin films in deareated and non-dearated cleaning solution containing hydrofluoric acid (HF) has been investigated. Potentiodynamic polarization experime
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12

Montoliu, Álvaro Carles. "Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes." Doctoral thesis, Universitat Politècnica de València, 2015. http://hdl.handle.net/10251/58609.

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[EN] The main topic of the present thesis is the improvement of fabrication processes simulation by means of the Level Set (LS) method. The LS is a mathematical approach used for evolving fronts according to a motion defined by certain laws. The main advantage of this method is that the front is embedded inside a higher dimensional function such that updating this function instead of directly the front itself enables a trivial handling of complex situations like the splitting or coalescing of multiple fronts. In particular, this document is focused on wet and dry etching processes, which are w
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13

Pal, Prem, Kazuo Sato, Miguel A. Gosalvez, and Mitsuhiro Shikida. "Novel Wet Anisotropic Etching Process for the Realization of New Shapes of Silicon MEMS Structures." IEEE, 2007. http://hdl.handle.net/2237/9437.

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14

Chaudhury, Rabib. "Selective wet chemical etching of erosion resistant coatings from titanium alloy substrates: mechanism and optimization." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=117073.

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Titanium aluminum nitride (TiAlN) is a type of erosion resistant ceramic coating that is applied to metal parts subject to high wear environments. Adding this coating helps protect the underlying substrate from these adverse conditions. Sometimes the coating layer must be removed and a new layer re-applied. The overarching goal of this project is to successfully remove the TiAlN coating from titanium alloy substrates through wet chemical etching. In meeting this goal, the following objectives must be met: the process must be fast, selective (i.e. does not adversely affect the underlying substr
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15

Zheng, Wen Ph D. Massachusetts Institute of Technology. "Fabrication of capacitors based on silicon nanowire arrays generated by metal-assisted wet chemical etching." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/104114.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 2016.<br>This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.<br>Cataloged from student-submitted PDF version of thesis.<br>Includes bibliographical references (pages 170-177).<br>Capacitors with high capacitance density (capacitance per footprint area) have potential applications in autonomous microsystems that harvest energy from the environment, as they can store and release energy at high rates.
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16

Dhru, Shailini Rajiv. "Process Development For The Fabrication Of Mesoscale Electrostatic Valve Assembly." Master's thesis, University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4244.

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This study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 &#956;m. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 &#956;m thick resist pattern on silicon wafer. This photo layer acts as a mask for deep reactive ion etching. Wet chemical etching process is developed to etch kapton po
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17

Yildirim, Alper. "Development Of A Micro-fabrication Process Simulator For Micro-electro-mechanical-systems(mems)." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/12606850/index.pdf.

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ABSTRACT DEVELOPMENT OF A MICRO-FABRICATION PROCESS SIMULATOR FOR MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) Yildirim, Alper M.S, Department of Mechanical Engineering Supervisor: Asst. Prof. Dr. Melik D&ouml<br>len December 2005, 140 pages The aim of this study is to devise a computer simulation tool, which will speed-up the design of Micro-Electro-Mechanical Systems by providing the results of the micro-fabrication processes in advance. Anisotropic etching along with isotropic etching of silicon wafers are to be simulated in this environment. Similarly, additive processes like do
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18

Powell, Olly, and n/a. "Fabrication of Micro-Mirrors in Silicon Optical Waveguides." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20040719.115224.

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The conventional large radii bends used in large cross section silicon-on-insulator waveguides were replaced with novel wet etched corner mirrors, potentially allowing much smaller devices, therefore lower costs. If such corners had been based on reactive ion etch techniques they would have had the disadvantage of rougher surfaces and poor alignment in the vertical direction. Wet etching overcomes these two problems by providing smooth corner facets aligned precisely to the vertical {100} silicon crystallographic planes. The waveguides obtained had angled walls, and so numerical analysis was u
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19

Powell, Olly. "Fabrication of Micro-Mirrors in Silicon Optical Waveguides." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/365595.

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The conventional large radii bends used in large cross section silicon-on-insulator waveguides were replaced with novel wet etched corner mirrors, potentially allowing much smaller devices, therefore lower costs. If such corners had been based on reactive ion etch techniques they would have had the disadvantage of rougher surfaces and poor alignment in the vertical direction. Wet etching overcomes these two problems by providing smooth corner facets aligned precisely to the vertical {100} silicon crystallographic planes. The waveguides obtained had angled walls, and so numerical analysis was u
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20

Wu, Chih-Ling, and 吳志凌. "Wet etching of patterned sapphire substrates." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/99842258278648630725.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>95<br>For last few years, there have been lots of progresses on InGaN/GaN-based light-emitting diodes (LEDs). Many new applications based on these LEDs including traffic light, backlight of TFT-LCD and some lighting applications, have been developed owing to the merits of LEDs, such as high-brightness, long-lifetime and high stability. However, for future illumination applications, it is very important to further enhance the external quantum efficiency of LED. In this research, patterned sapphire substrates were fabricated with wet chemical etching technology. A 3H2
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21

Shih, Jian-An, and 施建安. "Polyimide substrate micromachining by wet-etching technology." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/bnruyk.

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博士<br>國立中央大學<br>機械工程學系<br>107<br>This work presents the effects of swinging times, surfactant immersion time, corrosion solution immersion time and the pressure of water jet cutting on the PI film in order to fabricate a through hole with a diameter small to 30μm via wet-etching technology. The results are described as follows. First, the depth of etching pore becomes deeper with the increase of swinging times of water jet cutting, meanwhile the diameter of etching pore becomes broaden. Second, surfactant increases the surface energy and hydrophilicity of PI substrates, immersing the pores int
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22

Tsai, Wei Lun, and 蔡維倫. "Wet etching process investigation of patterned sapphire substrate." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/pu68b2.

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碩士<br>長庚大學<br>電子工程學研究所<br>96<br>In this research, we tried to use H2SO4 and H3PO4 mixed solution with different ratios to etch sapphire substrate at high temperature. With our experiment results, we found that the H2SO4 and H3PO4 solution with the ratio of 3:1 is the best solution for etching sapphire wafer. While etching with the stripe pattern, we got trenches along the <-1010> direction with symmetric sidewalls, and trenches along the <-2110> direction with asymmetric sidewalls on sapphire surface. Since the wafer we used for etching were very small (about 1/16 of 2” sapphire wafer), there
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23

Hsieh, Chia-Ming, and 謝嘉銘. "Study and Application of TMAH Anisotropic Wet Etching." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/81718552117093274366.

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碩士<br>國立臺灣大學<br>機械工程學研究所<br>88<br>Anisotropic wet etching is one of the key technologies for the microstructure fabrication in Micro Electro Mechanical Systems (MEMS). The most commonly used etchants are potassium hydroxide water solution (KOH), ethylenediamine-pyrocatechol-water (EDP), and hydrazine-water solution. EDP and hydrazine-water solution handling are dangerous because of the high toxicity and instability. Aqueous KOH solutions are the most widely used due to low toxicity and good surface roughness, but the compatibility with the CMOS processes is not good enough due to the mobile po
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24

Weng, Tsu-Hsien, and 翁祖賢. "Laser-induced backside wet cleaning and etching techniques." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/61761482493374135204.

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博士<br>華梵大學<br>機電工程學系<br>102<br>The aimed of this paper is to propose the alternative techniques of laser cleaning and etching for glass substrates. Two kinds of laser cleaning techniques are proposed in this study. The first involves applying an Nd:YAG laser to the backside of the substrate which is submerged in water. A metal plate is placed below the glass substrate. Most of the laser energy will be absorbed by the metal plate. The metal then vaporizes the water and generates a turbulent bubble flow. The bubble flow removes the alumina particles from the surface of the glass substrate. The s
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Yi, Eun-Hyeong. "Photo-assisted wet (PAW) etching for laser fabrication." 2009. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051427.

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26

Huang, Chih-wei, and 黃志偉. "Fabrication of quartz micro-pillars using wet etching." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/20997152202725482986.

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碩士<br>國立中央大學<br>機械工程研究所<br>100<br>Abstract Quartz has many remarkable characteristics such as piezoelectricity nature, high frequency, and thermal stability. It has been widely used as the main materials for oscillators, resonators, and surface acoustic wave filters. In recent years, quartz has been used in micro-sensors and MEMS applications, such as quartz SAW micro-sensors for biological analysis, and quartz microbalance for gas detection. To make quartz micro-sensors, it usually requires etching processes. Comparing dry and wet etching techniques of quartz, the cost of dry etching has more
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27

Cho, Wen-June, and 邱文俊. "The Research of the KOH/Alcohol Etchant System in Wet Etching of Monocrystal Silicon." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/6qun6c.

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博士<br>國立清華大學<br>化學工程學系<br>92<br>Abstract The study is mainly to discuss the influence of alcohol moderator on the different silicon crystalline plane, when the alcohol moderator was added into the KOH solution. Two types of alcohols were added into the KOH solution, one OH group alcohol and multi OH group alcohol. The etching rates of silicon (100) plane and (110) plane depended on the conditions of temperature, KOH concentration and alcohol concentration. At the condition of the highest etching rate, it discussed the development of circular concave of (100) silicon and (110) silicon. At the s
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28

Ning, Rong-Chun, and 甯榮椿. "Etching of SixNy and TiN Usning Inductively-Coupled Plasma Reactive Ion Etching: Study of Selectivity and Etching Rate of TiN with SC1 Wet Etching." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/06657099658319035261.

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碩士<br>國立清華大學<br>材料科學工程學系<br>98<br>In order to make the lightly doped drain region structure Ⅲ-Ⅴ MOSFET self-aligned process well-controlled, information about dry etching and wet etching must be investigated. In this thesis, the dry etching of PECVD-SixNy and sputtered TiN was performed with inductively-coupled plasma reactive ion etching system to ascertain the etching rates and selectivity of SixNy to TiN. Wet etching rates of sputtered TiN, in-situ ALD-Al2O3, PECVD-SixNy with SC1 solution were also demonstrated. With the etching chemistry CHF3/O2 whose flow rate was 20/10 SCCM, the highest
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Dai, Chung-Han, and 戴君涵. "Study of Buried-Contact Solar Cell by Wet Etching." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/33393830312355787336.

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30

Tsai, Hsin-Jung, and 蔡欣蓉. "Feasibility Study on Wet Etching for Wafer Sawing Technology." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/55765310936430933691.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>103<br>In this work, the feasibility to combine multi-wire sawing and metal-assisted chemical etching (MaCE) processes for silicon wafer cutting technology is studied. First, layers of Pt metal were deposited on stainless steel substrate via electroless plating method and the prepared material was used for the surface modification of silicon wafer by MaCE. Next, a mixture design method was adopt in order to facilitate the process of finding the best ratio among etchant chemicals. Finally, the effects caused by different etching conditions were evaluated by SEM and su
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31

Jiang, Ren-Hao, and 江仁豪. "Wet oxidation and etching processes applied on GaN optoelectronic devices." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/72ye59.

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博士<br>國立中興大學<br>材料科學與工程學系所<br>101<br>The major topics in this thesis were focused the characteristic of the fabrication and analysis about GaN-based optoelectronic devices through wet oxidation and etching process. In first part, a photoelectrichemical (PEC) wet mesa etching process was used to fabricate InGaN-based light-emitting diodes as a substitute for the conventional plasema mesa dry etching process. The etching process were consisted of photoelectrochemical wet oxidation and oxide-removed processes occurred on p-type GaN:Mg layer, InGaN active layer, and n-type GaN:Si layer to define m
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Lee, Dan-Long, and 李典融. "Fabrication of InGaAsP/InGaAsP Electro-absorption Modulator by Wet Etching." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/11840264193728556880.

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碩士<br>國立中山大學<br>光電工程研究所<br>92<br>Abstract The high-speed performance of the lump-type electroabsorption modulator (EAM) is mainly limited by RC-effect. By taking advantage of the distributive effects, the traveling-wave structure can overcome the RC-lump effect. However, in order to enhance the limitation imposed by the conventional slow-waveguide type of traveling-wave structure, the speed of the device is still mainly restricted by the distributed capacitance of the waveguide. In this work, a novel type of traveling-wave-electroabsorption-modulator based on the undercut-etching the a
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Tai, Chih-Yu, and 戴志宇. "New-Geometrical-Structure Traveling-Wave Electroabsorption Modulator by Wet Etching." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/07277851943296391340.

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碩士<br>國立中山大學<br>光電工程研究所<br>93<br>Abstract In this thesis, we propose a new geometrical structure of waveguide for the application of traveling-wave electroabsorption modulator (TWEAM). As approaching to high-speed performance in TWEAM, low parasitic capacitance in the waveguide is necessary to get good microwave propagation properties. In this work, a novel processing called two-step undercut-etching the active region (UEAR) is developed to reduce the parasitic capacitance. First of all, Beam Propagation Method (BPM) is used to calculate this 2-D structure optical modes ensuring the guiding
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Lai, Yu-Ting, and 賴郁廷. "Flow Rate Analysis of Wet Etching Machine Using Neural Network." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/92933407233608864327.

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碩士<br>國立彰化師範大學<br>電機工程學系<br>99<br>In recently years, the government has promoted the semiconductor development with great encouragement, therefore the industry has grown rapidly. Also, the semiconductor equipments have developed at the same time. So far, most the equipment that monitor the flow rate make use of the wet etching for the single wafer spin processor only set up unusual flow rate for Max. and Min. data .In order to monitor the unusual flow rate for troubleshooting and analyzing as soon as possible. In this research, neural network with back-propagation will be used because of its
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Chiou, Ya-Lan, and 邱雅蘭. "Gate recessing of AlGaN/GaN HEMT using PEC wet etching." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/42280938214346084466.

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碩士<br>國立成功大學<br>光電科學與工程研究所<br>96<br>In the thesis, a photoelectrochemical (PEC) method is proposed and applied in fabricating gate-recessed AlGaN/GaN MOS-HEMTs. We used the PEC wet etching method to replace a generally dry etching method for reducing fewer ion-induced damages on the etched surface. Gate-recess process can change the position of oxide/semiconductor interface to modify the threshold voltage and enhance the gate controllability. After gate-recess process, the PEC oxidation method was used to oxidize AlGaN semiconductor directly as gate dielectric layer of AlGaN/GaN MOS-HEMTs. It
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Chen, Rui Xin, and 陳瑞鑫. "Lithium niobate ridge optical waveguide devices fabricated by wet etching." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/44682522421908336275.

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37

Lin, Chun-Hung, and 林俊宏. "Wet chemical etching study of galliun nitride by acid solution." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/84eb34.

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碩士<br>中正理工學院<br>應用化學研究所<br>88<br>Since GaN has the wide band gap of 3.5eV (wurtzite phase), it is suitable for the light-emitted diodes, laser diodes, and the other photoelectric components, which emits the blue-green lights. Etching method and optimum are two important procedures to prepare the photoelectric components of the GaN device. The energetic ion etching and wet etching the are primary etching methods at the present time. Techniques like plasma of active gas or energetic ion etching can etch a smooth bottom and a vertical sidewall. However, the surface damage caused by ion bombardm
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Li, Jian-Yi, and 李建宜. "MEMS Fabrication Using Wet Etching for Millimeter-Wave Filter Applications." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/45019450771308936968.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>Membrane-based circuits are typically long because the effective dielectric constant is close to 1.0 by using microelectromechanical system (MEMS) technology. In addition, removal of silicon substrate eliminates any loss associated directly with the dielectric and any dispersion related to the dielectric / air interface, and allows a single mode TEM propagation over a very broad bandwidth. The dielectric membrane and the surrounding cavities are built using wet etching in silicon wafers. With low-cost IC fabrication techniques, a two-layer structure of Si
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Lin, Yu-Yuan, and 林毓源. "Wet etching process and properties of single-crystalline silicon nanowires." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/03790517969831107366.

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碩士<br>國立中央大學<br>化學工程與材料工程研究所<br>100<br>In the present study, we have demonstrated that large-area, length-tunable arrays of vertically aligned Si nanowire were successfully produced on (001)Si and (111)Si substrates by using the PS nanosphere lithography combined with the Au-assisted selective chemical etching process. The diameter of the Si nanowire produced was very uniform and observed to be approximately 120 nm. Based on the analyses of the TEM image and the corresponding SAED patterns, it can be concluded that the Si nanowires produced have single-crystalline nature and form along the [00
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Lai, Yung-Yu, and 賴永裕. "The Study of Chemical Wet Etching on GaN Epi-layer." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/86721184869275920065.

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碩士<br>淡江大學<br>化學工程與材料工程學系碩士班<br>101<br>This study use the different etchants to do wet-etching process on the un-doped GaN epi-layer on sapphire substrate. We investigate in detail about the depth and morphology by different etching conditions. In this experiment, metal-organic chemical vapor deposition (MOCVD) was used to regrow un-doped GaN on sapphire substrate. And then, c-plane GaN epi-layer was used to the basic substrate for etching study. The different polarities face have respective phenomenon in etching process. Therefore, this study will discuss the different etching behaviors o
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Li, Shao-Huang, and 李劭皇. "Study on Selective Wet-chemical Etching for GaSb and InAsPSb." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/30247397869814890676.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>101<br>In this thesis, a series of InAsPSb with different composition was grown on (100) n-type GaSb substrate by a GSMBE system. In order to find a selective wet-chemical etchant, we study the characteristics of hydrochloric acid-based and hydrofluoric acid-based solutions etchant for InAsPSb and GaSb. For hydrochloric acid-based solution, the influence of oxidizing agent on etch rate was studied. We found that etching rate of GaSb with hydrochloric acid-based solution is a linear function of the volume H2O2. Besides, we investigate the dependence between the e
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Lin, Hong-yu, and 林鴻宇. "The etchant screen effect of sapphire surface atoms on wet etching pattern formation behavior and application." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/pnp7g3.

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博士<br>國立中央大學<br>化學工程與材料工程學系<br>102<br>This thesis is about sapphire pattern formation behavior and application of natural patterned sapphire substrate (n-PSS). In the 1st part, we pre-dissolving Al3+ into etching solution to produce PSS, and this process is named as novel n-PSS fabrication process. After MOCVD epitaxy on these sapphire substrates, we use XRD and Raman to analysis GaN thin film quality. We find out that GaN on patterned sapphire substrate (PSS) has lower dislocation density. The bare chip output power increases with pattern coverage. After white light package, LED chips ha
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Stateikina, Irina. "Mechanism of wet anisotropic etching of silicon for nano-scale applications." Thesis, 2007. http://spectrum.library.concordia.ca/975298/1/NR30139.pdf.

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The fabrication processes of recent MEMS devices require the use of anisotropic etching and variety of concave structures. Analysis of these structures uncovered phenomenon in the etch rates of surfaces exposed by anisotropic etchant. This phenomenon could not be explained without consideration of the composition of these surfaces on atomic level. My study raised the step-based modeling of these planes, their relative interactions, and dependence on the etching environment. Control of this environment and better understanding of the different factors that influence the etch rates of these su
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Lu, Chun-Nan, and 盧俊男. "A Study of Fabrication for Micro Structures by Anisotropic Wet Etching." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/55800428844537172408.

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碩士<br>國立交通大學<br>電子工程系<br>88<br>In order to implement the MEMS devices on the silicon wafers, it's necessary to fabricate various microstructures. In this thesis, we employed the anisotropic wet-etching process to develop the crystallographic- orientation alignment technology, the etch-stop technology, and the corner compensation technology. We used photolithography and etch processes to transfer the various designed photomask patterns onto {100} silicon wafers, which would be etched in the aqueous KOH until the desired microstructures have been achieved. In this experiment, we achieved the fol
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Hsu, Chew-Wei, and 許晁瑋. "InGaN based MSM Photodetectors Fabricated by Photoenhanced Chemical Wet Etching Technique." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/34099709980978028301.

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碩士<br>國立成功大學<br>奈米科技暨微系統工程研究所<br>96<br>Wild band gap material such as III-V compound are attracted in well electronic property of high chemical stability, high mobility, high thermal stability, and high breakdown voltage. The structure of InGaN based MSM photodetectors are epitaxied on sapphire substrate by MOCVD system. As result of the high lattice mismatch between InGaN and sapphire, the epitaxal quality is poor. Thus, the objective of this research is to design the appropriate device structure for InGaN based MSM, MOS, and heterojunction PDs to improve the device performance. On the other
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Huang, Ter-Chang, and 黃德昌. "Miniaturization of Micro Pressure Sensor by Combining Dry and Wet Etching." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/55916068201536691115.

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碩士<br>國立交通大學<br>工學院碩士在職專班精密與自動化工程學程<br>93<br>In this research, silicon piezo-resistive pressure sensor were fabricated by the combining dry and wet silicon etching method. The combining etching method can reduce the pressure sensor chip size fifty-seven percent. That is to say, the combining silicon etching wafers can yield approximately two times the number of chips than typically silicon wet etched wafers. The combining silicon etching have two major process. First step, to use the inductively coupled plasma etching equipment etch about eighty percent depth of the wafer thickness. Second
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Li, Chi-Hua, and 李其樺. "The modification of electric properties of buckypaper by wet etching process." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/56230448073850402682.

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碩士<br>東海大學<br>電機工程學系<br>102<br>Since their discovery, carbon nanotubes (CNTs) have attracted the attention of many scientists around the world. This extraordinary interest stems from their outstanding structural, mechanical, and electronic properties. Recent advances in the development of reliable methods for the chemical functionalization of the nanotubes provide an additional impetus towards extending the scope of their application spectrum. This study deals with the multiwalled CNTs (MWCNTs) suspension solution, to achieve its excellent electrical properties of carbon nanotubes in the macro
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MIAO, JIN-RU, and 苗金儒. "Computer simulation of morphological formation and evolution during wet chemical etching." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/13124553219793787290.

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碩士<br>國立臺南大學<br>材料科學系碩士班<br>105<br>The technique of wet chemical etching has been applied in many fields, especially in semiconductor industry, due to its low cost, convenience, and controllability. With the decrease in the size of the electronic devises, the precise fabrication of complicated patterns and morphologies on a smaller chip has become an important issue. In order to manufacture a specific morphology suitable for the functional devices, all the processing parameters, such as the species, concentration and temperature of the etchant, need to be well controlled. In this study, a chem
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Li, Heng-Hsu, and 李恒旭. "Characterization of Textured Aluminum Doped Zinc Oxide Films by Wet Etching." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/05431031761136699475.

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碩士<br>崑山科技大學<br>電機工程研究所<br>97<br>This project provides an overview of surface texturing of aluminum doped zinc oxide (AZO) films by wet etching. For thin films solar cell application, the light passed through solar cells reduced reflectance to permeate into absorb layer of solar cells improve the conversion efficiencies when using solar cells as transparent electrode. In this work, acidic (HCI) and alkaline solutions (KOH) were used as etching solutions from the etching behavior. Four sample AZO films (A50、A150、AH50、AH150) were produced from four different recipe with in-line sputtering. Four
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Böhme, Rico [Verfasser]. "Laser induced backside wet etching of glasses and crystals / von Rico Böhme." 2007. http://d-nb.info/985935650/34.

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