Log in

Relevant bibliographies by topics / Wet etching / Journal articles

To see the other types of publications on this topic, follow the link: Wet etching.

Journal articles on the topic 'Wet etching'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Wet etching.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Li, Hao, Yong You Geng, and Yi Qun Wu. "Selective Wet Etching Characteristics of Aginsbte Phase Change Film with Ammonium Sulfide Solution." Advanced Materials Research 529 (June 2012): 388–93. http://dx.doi.org/10.4028/www.scientific.net/amr.529.388.

Full text

Abstract:

The selective wet etching characteristics of AgInSbTe film as a new thermal lithography material were studied with ammonium sulfide solution as etchant. Influences of vacuum-annealing temperature, etchant concentration and wet etching time on selective wet etching characteristics of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicated that the etching rate of AgInSbTe film increased with the enhancement of crystallization extent, and the etching rate of crystalline state AgInSbTe film annealed at 300°C was 35nm/min in 17wt% ammonium sulfide solution, a

APA, Harvard, Vancouver, ISO, and other styles

2

KATO, Kazunori. "Application of Wet Etching. Wet Etching-Theory and Application." Journal of the Surface Finishing Society of Japan 49, no. 10 (1998): 1031–37. http://dx.doi.org/10.4139/sfj.49.1031.

Full text

APA, Harvard, Vancouver, ISO, and other styles

3

Lee, Changjin, Ji-Eun Lee, Eun-Woo Jang, Ji-Hoon Kim, Jinsub Park, and Jea-Gun Park. "Effect of Polymer Type Additives in Selective Wet Etching of Si_1-XGe_x- to Si-Film to Enhance Etch Rate Selectivity." ECS Meeting Abstracts MA2024-02, no. 32 (2024): 2303. https://doi.org/10.1149/ma2024-02322303mtgabs.

Full text

Abstract:

To extend the scalability of the logic transistor beyond the 3-nm process, the architecture of the metal-oxide-semiconductor field-effect transistor (MOSFET) has changed from FinFET to gate-all-around FET (GAAFET). In addition, to continue the scaling of MOSFET further, various concepts of nanosheet architecture devices, including GAAFET, Forksheet FET, and Complementary FET, have been vigorously researched. To fabricate nanosheet devices, releasing Si channels via selective etching of Si1-xGex- to Si-layer is a key process. However, during the selective etching of Si1-xGex- to Si-layer, simul

APA, Harvard, Vancouver, ISO, and other styles

4

Yusoh, Siti Noorhaniah, and Khatijah Aisha Yaacob. "Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography." Beilstein Journal of Nanotechnology 7 (October 17, 2016): 1461–70. http://dx.doi.org/10.3762/bjnano.7.138.

Full text

Abstract:

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained r

APA, Harvard, Vancouver, ISO, and other styles

5

Kikkawa, Yuki, Yuzan Suzuki, Kohei Saito, et al. "Alkali Wet Chemicals for Ru with Advanced Semiconductor Technology Nodes." Solid State Phenomena 346 (August 14, 2023): 325–30. http://dx.doi.org/10.4028/p-08chsp.

Full text

Abstract:

Wet chemicals for ruthenium (Ru) etching are required for the formation of reliable Ru interconnects in advanced semiconductor technology nodes. In the present study, a novel alkali wet etchant, referred to as TK-1, has been developed in order to overcome issues with conventional Ru etchants, such as a low etch rate and the formation of toxic RuO4 gas. Regardless of the Ru deposition process, TK-1 exhibits a high Ru etching selectivity of greater than 100 relative to dielectric and liner materials. It also suppresses the production of RuO4 during the etching process. TK-1 has potential applica

APA, Harvard, Vancouver, ISO, and other styles

6

Ding, Jingxiu, Ruipeng Zhang, Yuchun Li, David Wei Zhang, and Hongliang Lu. "Investigation of a Macromolecular Additive on the Decrease of the Aluminum Horizontal Etching Rate in the Wet Etching Process." Metals 12, no. 5 (2022): 813. http://dx.doi.org/10.3390/met12050813.

Full text

Abstract:

The effect of a macromolecular additive on the etching rate of aluminum (Al) horizontal etching in the wet process was investigated in this work. The horizontal etching in the Al wet etching process became more evident as the film Al becomes thicker. The proposed macromolecule additive, including polyethylene-polypropylene glycol, was added into the Al etchant solution to reduce the Al horizontal etching rate (ER). The undercut problem during metal patterning can then be improved. By using this method, the Al horizontal ER was reduced from 2.0 to 0.9 μm per minute and the selection ratio betwe

APA, Harvard, Vancouver, ISO, and other styles

7

Ueda, Dai, Yousuke Hanawa, Hiroaki Kitagawa, et al. "Effect of Hydrophobicity and Surface Potential of Silicon on SiO₂ Etching in Nanometer-Sized Narrow Spaces." Solid State Phenomena 314 (February 2021): 155–60. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.155.

Full text

Abstract:

Wet etching in nanometer-sized three-dimensional spaces creates new challengesbecause of the scaling of semiconductor devices with complex 3D architecture. Wet etching withinspaces is affected by the mass transport of the etchant ions that are impacted by the hydrophobicityand surface potential of surface. However, the kinetics of chemical reactions within the spaces is stillunclear.In this paper, we studied the effect of hydrophobicity and surface potential of silicon surface on SiO2etching in nanometer-sized narrow spaces by adding various additive components to etching solutions.We found th

APA, Harvard, Vancouver, ISO, and other styles

8

Rahim, Rosminazuin A., Badariah Bais, and Majlis Burhanuddin Yeop. "Simple Microcantilever Release Process of Silicon Piezoresistive Microcantilever Sensor Using Wet Etching." Applied Mechanics and Materials 660 (October 2014): 894–98. http://dx.doi.org/10.4028/www.scientific.net/amm.660.894.

Full text

Abstract:

In this paper, a simple microcantilever release process using anisotropic wet etching is presented. The microcantilever release is conducted at the final stage of the fabrication of piezoresistive microcantilever sensor. Issues related to microcantilever release such as microscopic roughness and macroscopic roughness has been resolved using simple technique. By utilizing silicon oxide (SiO2) as the etch stop for the wet etching process, issues related to microscopic roughness can be eliminated. On the other hand, proper etching procedure with constant stirring of the etchant solution of KOH an

APA, Harvard, Vancouver, ISO, and other styles

9

Çakır, Orhan. "Review of Etchants for Copper and its Alloys in Wet Etching Processes." Key Engineering Materials 364-366 (December 2007): 460–65. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.460.

Full text

Abstract:

Wet etching processes have been widely used for producing micro-components for various applications. These processes are simple and easy to implement. The selection of suitable chemical solution which is called etchant is the most important factor in the wet etching processes. It affects etch rate and surface finish quality. Copper and its alloys are important commercial materials in various industries, especially in electronics industry. Their wide applications are due to their excellent electrical and thermal conductivity, ease of fabrication, good strength and fatigue properties. The presen

APA, Harvard, Vancouver, ISO, and other styles

10

Rath, P., J. C. Chai, Y. C. Lam, V. M. Murukeshan, and H. Zheng. "A Total Concentration Fixed-Grid Method for Two-Dimensional Wet Chemical Etching." Journal of Heat Transfer 129, no. 4 (2006): 509–16. http://dx.doi.org/10.1115/1.2709654.

Full text

Abstract:

A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely—the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation wi

APA, Harvard, Vancouver, ISO, and other styles

11

Philipsen, Harold, Sander Teck, Nils Mouwen, Wouter Monnens, and Quoc Toan Le. "Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution." Solid State Phenomena 282 (August 2018): 284–87. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.284.

Full text

Abstract:

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.

APA, Harvard, Vancouver, ISO, and other styles

12

Chen, Sicong, Christopher Lim, and Vincent Chai. "HF Compatibility Study on KrF and I-Line System Resist." Key Engineering Materials 965 (November 28, 2023): 99–104. http://dx.doi.org/10.4028/p-ph0pys.

Full text

Abstract:

Advance nanoscale patterning technology requires high resolution lithography, from ultraviolet (UV, i-line system) to deep ultraviolet (DUV, KrF system) until extreme ultraviolet (EUV), but the compatibility study of new resist types and wet etchant is lacking. The compatibility is defined as the duration of a photoresist being able to withstand in wet oxide etchant. Poor compatibility has potential resist lifting and/or penetration during wet etch process, which causes electronic device performance drifting. Currently, wet oxide etching is widely used in the gate oxide wet etch using patterne

APA, Harvard, Vancouver, ISO, and other styles

13

Liu, Dan, Guoliang Chen, Zhonghao Huang, et al. "P‐7.11: Effect of etching conditions, MoNb thickness on gate profile and CD Bias of ADS Pro TFT." SID Symposium Digest of Technical Papers 55, S1 (2024): 1083–86. http://dx.doi.org/10.1002/sdtp.17284.

Full text

Abstract:

The etched MoNb/Cu stack film is widely used as gate electrodes for ADS Pro TFTs. The CD Bias and profile angle(PA) are two important performance parameters for wet etching. The product‐specific bottom MoNb thickness and the fluctuation of wet etching conditions(time, temperature, and Cu ion concentration) make it difficult to precisely control the etching quality, thus it is of great significance to identify the influence of the above two factors on CD Bias and PAs. In this paper, the wet etching time, temperature and Cu ion concentration are taken as independent variables, and 11 different e

APA, Harvard, Vancouver, ISO, and other styles

14

Shen, Bowen, Di Hu, Cuihua Dai, et al. "Advanced Etching Techniques of LiNbO3 Nanodevices." Nanomaterials 13, no. 20 (2023): 2789. http://dx.doi.org/10.3390/nano13202789.

Full text

Abstract:

Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant polarizations. However, challenges remain regarding their nanofabrication that hinder their applications. The prevailing etching techniques for LNO encompass dry etching, wet etching, and focused-ion-beam etching, each having distinct merits and demerits. Achieving higher etching rates and improved sidewall angles presents a challenge in LNO nanofabric

APA, Harvard, Vancouver, ISO, and other styles

15

Hao, Yuhua, and Xia Wang. "Effects of the Photoelectrochemical Etching in Hydrogen Fluride (HF) on the Optoelectrical Properties of Ga₂O₃." Journal of Physics: Conference Series 2112, no. 1 (2021): 012006. http://dx.doi.org/10.1088/1742-6596/2112/1/012006.

Full text

Abstract:

Abstract Photoelectrochemical (PEC) etching is preferred to produce micro-and nano-structures for constructing Ga2O3-based electronics and optoelectronics, owing to its numerous controllable parameters. During the devices fabrications, beyond the wet chemical and dry (plasma) etching produces, PEC etching also leads to device degradations inordinately. In this work, the Ga2O3 thin film was PEC etched by hydrogen fluride (HF) etchant, and its opto-electric deep-ultraviolet sensing performances, including photo-to-dark current ratio, responsivity, and response speed, before and after PEC etching

APA, Harvard, Vancouver, ISO, and other styles

16

Xi Lan, Chen, Chao Jin, Yu Bing Gong, Hong Li Wang, and Li Ping Fan. "Process optimization of wet etching for split gate trench MOSFET." Journal of Physics: Conference Series 2859, no. 1 (2024): 012003. http://dx.doi.org/10.1088/1742-6596/2859/1/012003.

Full text

Abstract:

Abstract In this paper, the influence of etching technology on the performance of Split Gate Trench (SGT) MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) is studied, and the significance and contribution of these improvements in the fields of mechatronics, robotics and control systems are discussed. Etching can be categorized into wet etching and dry etching, with wet etching being widely used for etching the gates of SGT MOSFETs. Due to the isotropic nature of wet etching, issues such as undercutting, trenching, and insufficient link-up region length can arise, leading to short ci

APA, Harvard, Vancouver, ISO, and other styles

17

Shimozono, Naoki, Mikinori Nagano, Takaaki Tabata, and Kazuya Yamamura. "Study on In Situ Etching Rate Monitoring in Numerically Controlled Local Wet Etching." Key Engineering Materials 523-524 (November 2012): 34–39. http://dx.doi.org/10.4028/www.scientific.net/kem.523-524.34.

Full text

Abstract:

Numerically controlled local wet etching (NC-LWE) is very promising technique for deterministic figuring of ultraprecision optical devices, such as aspherical lens, photo mask substrate and X-ray or neutron focusing mirror. NC-LWE technique is non-contact removal process using chemical reaction between etchant and surface of workpiece, so this technique enables us to figure the objective shape without introduction both substrate deformation and sub-surface damage. It is essential to measure temperature and concentration of the etchant to maintain the material removal rate constant over a proce

APA, Harvard, Vancouver, ISO, and other styles

18

Che, Woo Seong, Chang Gil Suk, Tae Gyu Park, Jun Tae Kim, and Jun Hyub Park. "The Improvement of Wet Anisotropic Etching with Megasonic Wave." Key Engineering Materials 297-300 (November 2005): 557–61. http://dx.doi.org/10.4028/www.scientific.net/kem.297-300.557.

Full text

Abstract:

A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as the etch rate, etch uniformity, surface roughness. The etching uniformity was less than ±1% on the whole wafer. The initial root-mean-squre roughness(Rrms) of single crystal silicon is 0.23nm [1]. It has been reported that the r

APA, Harvard, Vancouver, ISO, and other styles

19

Radjenovic, Branislav, and Marija Radmilovic-Radjenovic. "Level set simulations of the anisotropic wet etching process for device fabrication in nanotechnologies." Chemical Industry 64, no. 2 (2010): 93–97. http://dx.doi.org/10.2298/hemind100205008r.

Full text

Abstract:

Chemical etching is employed as micromachining manufacturing process to produce micron-size components. As a semiconductor wafer is extremely expensive due to many processing steps involved in the making thereof, the need to critically control the etching end point in an etching process is highly desirable. It was found that not only the etchant and temperature determine the exact anisotropy of etched silicon. The angle between the silicon surface and the mask was also shown to play an important role. In this paper, angular dependence of the etching rate is calculated on the base of the silico

APA, Harvard, Vancouver, ISO, and other styles

20

Brokmann, Ulrike, Christoph Weigel, Luisa-Marie Altendorf, Steffen Strehle, and Edda Rädlein. "Wet Chemical and Plasma Etching of Photosensitive Glass." Solids 4, no. 3 (2023): 213–34. http://dx.doi.org/10.3390/solids4030014.

Full text

Abstract:

Photosensitive glasses for radiation-induced 3D microstructuring, due to their optical transparency and thermal, mechanical, and chemical resistance, enable the use of new strategies for numerous microscale applications, ranging from optics to biomedical systems. In this context, we investigated the plasma etching of photosensitive glasses after their exposure and compared it to the established wet chemical etching method, which offers new degrees of freedom in microstructuring control and microsystem fabrication. A CF4/H2 etching gas mixture with a constant volumetric flow of 30 sccm and a va

APA, Harvard, Vancouver, ISO, and other styles

21

Shang, Ying-Qi, Hong Qi, Yun-Long Ma, Ya-Lin Wu, Yan Zhang, and Jing Chen. "Study on sapphire microstructure processing technology based on wet etching." International Journal of Modern Physics B 31, no. 07 (2017): 1741004. http://dx.doi.org/10.1142/s0217979217410041.

Full text

Abstract:

Aiming at the problem that sapphire surface roughness is quite large after wet etching in sapphire microstructure processing technology, we optimize the wet etching process parameters, study on the influences of concentration and temperature of etching solution and etching time on the sapphire surface roughness and etching rate, choose different process parameters for the experiment and test and analyze the sapphire results after wet etching. Aiming at test results, we also optimize the process parameters and do experiment. Experimental results show that, after optimizing the parameters of etc

APA, Harvard, Vancouver, ISO, and other styles

22

Kashkoush, Ismail, Jennifer Rieker, Gim Chen, and Dennis Nemeth. "Process Control Challenges of Wet Etching Large MEMS Si Cavities." Solid State Phenomena 219 (September 2014): 73–77. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.73.

Full text

Abstract:

Anisotropic etching of silicon refers to the directional-dependent etching, usually by alkaline etchants like aqueous KOH, TMAH and other hydroxides like NaOH. With the strong dependence of the etch rate on crystal orientation and on etchant concentration and temperature, a large variety of silicon structures can be fabricated in a highly controllable and reproducible manner. Hence, anisotropic etching of <100> silicon has been a key process in common MEMS based technologies for realizing 3-D structures [1-4]. These structures include V-grooves for transistors, small holes for ink jets a

APA, Harvard, Vancouver, ISO, and other styles

23

Popov, Alexei Borisovich, and Elena Mihajlovna Grazhevskaya. "Color etching (wet printing) technique execution exemplified by copying a fresco painting." Secreta Artis 5, no. 3 (2023): 86–95. http://dx.doi.org/10.51236/2618-7140-2022-5-3-86-95.

Full text

Abstract:

The present scientific paper is first to describe the core elements of the methodology developed by the Merited Artist of the Russian Federation, Associate Member of the Russian Academy of Arts, A. B. Popov as part of his class on color etching technique (wet printing) at the Academy of Watercolor and Fine Arts of Sergey Andriaka. The authorial technique in question is elaborated and explained through an exemplary task: a step-by-step reproduction of a temple fresco painting with the usage of color etching (i. e. three plate printing with blue, red, yellow paints). The article touches upon a w

APA, Harvard, Vancouver, ISO, and other styles

24

Venkatramana, Reddy. "Role of etching processes in MEMS fabrication." i-manager's Journal on Communication Engineering and Systems 14, no. 1 (2025): 34. https://doi.org/10.26634/jcs.14.1.21952.

Full text

Abstract:

This research examines key techniques for both wet and dry etching to fabricate highly accurate microstructures in microelectromechanical systems (MEMS) devices. The sentence discusses the employment of advanced techniques such as DRIE and plasma etching for precise control over feature geometry. Other techniques, such as metal-assisted etching and wet etching, are also being studied. The paper focuses on the difficulties of achieving consistent etch rates and highlights the importance of process control through parameter adjustment. Sophisticated etching techniques are essential for modern ME

APA, Harvard, Vancouver, ISO, and other styles

25

Edwards, Stephanie, Ryan Persons, Steve Feltham, Jeff Howerton, Geoffrey Lott, and Daniel Macko. "Laser Etching of Gold Conductors for RF Applications." International Symposium on Microelectronics 2019, no. 1 (2019): 000373–80. http://dx.doi.org/10.4071/2380-4505-2019.1.000373.

Full text

Abstract:

Abstract Thick film customers who require fine line resolution for their circuitry typically utilize wet chemical etching as a means to reduce conductor's lines and spaces when fine line definition cannot be reliably attained with screen printing alone. Wet chemical etching typically has the means to reduce conductor line widths from a printed definition of 3 mil (75 μm) to as low as 1 mil (25 μm) lines and spaces. The process of performing this chemical etching is time consuming and costly when factoring in the necessary process limitations. With the issues presented by wet chemical etching,

APA, Harvard, Vancouver, ISO, and other styles

26

Su, Xiang Yong, Zhi Sheng Jing, Zhi Yong Cheng, Ze Long Zhou, and Bing Jie Zhu. "A Novel Method for Silicon-Beam Fabrication in Wet Etching." Applied Mechanics and Materials 536-537 (April 2014): 1407–10. http://dx.doi.org/10.4028/www.scientific.net/amm.536-537.1407.

Full text

Abstract:

Fabricating silicon-beam through the wet etching has been developed for many years, there are a lot of advantages during the wet etching, low cost, easy to obtain and so on. However the design and fabrication of silicon-beam with polygon section has been confined during the process of wet etching; In order to fabricate more kinds of silicon-beam with the advantages of the wet etching, a novel method to fabricate silicon-beam with polygon section is proposed. The fabricating process has been designed by taking advantage of the protection effect of the SiO2 layer.

APA, Harvard, Vancouver, ISO, and other styles

27

Kayede, Emmanuel, Emre Akso, Brian Romanczyk, et al. "Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N." Crystals 14, no. 6 (2024): 485. http://dx.doi.org/10.3390/cryst14060485.

Full text

Abstract:

A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant primarily targets N-polar unintentionally doped (UID) GaN, indicating its potential as a suitable replacement for selective dry etches in the fabrication of GaN high-electron-mobility transistors (HEMTs). The efficacy and selectivity of this etchant were confirmed through its application to a gate recess module of a deep-recess HEMT, where, despite a

APA, Harvard, Vancouver, ISO, and other styles

28

Stocker, D. A., E. F. Schubert, K. S. Boutros, and J. M. Redwing. "Fabrication of Smooth GaN-Based Laser Facets." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 799–804. http://dx.doi.org/10.1557/s1092578300003446.

Full text

Abstract:

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10}, {10}, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for

APA, Harvard, Vancouver, ISO, and other styles

29

Kim, Dong Gyu, Guy Vereecke, Pallavi Puttarame Gowda, et al. "Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing." Solid State Phenomena 346 (August 14, 2023): 34–39. http://dx.doi.org/10.4028/p-irgat2.

Full text

Abstract:

The use of SiGe substrate as a semiconductor material is increasing because of its unique properties. In order to manufacture high-performance devices, it is necessary to develop SiGe selective etching technology. In this study, SiGe epi and oxide substrates with varying germanium percentages (15, 25, and 40 %) were used for the investigation of the selective etching process. As the etchant, APM (1:4:20) solutions were used, and added HF and HCl to confirm the pH effect. The evaluation was conducted while adjusting the pH level. In the case of the SiGe epi substrate, the etching rate was very

APA, Harvard, Vancouver, ISO, and other styles

30

Mileham, J. R., S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. J. Shul, and S. P. Kilcoyne. "Wet chemical etching of AlN." Applied Physics Letters 67, no. 8 (1995): 1119–21. http://dx.doi.org/10.1063/1.114980.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Oshima, Takayoshi, Takeya Okuno, Naoki Arai, Yasushi Kobayashi та Shizuo Fujita. "Wet Etching of β-Ga2O3Substrates". Japanese Journal of Applied Physics 48, № 4 (2009): 040208. http://dx.doi.org/10.1143/jjap.48.040208.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Jin, Zhu, Yingying Liu, Ning Xia та ін. "Wet etching in β-Ga₂O₃ bulk single crystals". CrystEngComm 24, № 6 (2022): 1127–44. http://dx.doi.org/10.1039/d1ce01499d.

Full text

Abstract:

Wet etching is a simple and effective method to identify defects, fabricate patterns, and polish wafers of semiconductors. We highlight recent progress in wet etching of β-Ga2O3 substrates with an aim to comprehensively understand the etching behavior and mechanism.

APA, Harvard, Vancouver, ISO, and other styles

33

Hei, Zehuan, Yang Liu, Ganlin Song, et al. "Selective polycrystalline silicon removal combining dry etching and wet etching process for 3D multilayer device fabrication." Journal of Physics: Conference Series 2956, no. 1 (2025): 012024. https://doi.org/10.1088/1742-6596/2956/1/012024.

Full text

Abstract:

Abstract Polycrystalline silicon (polysilicon) is generally regarded as structure material and dummy material in 3D multilayer structure semiconductor manufacturing. The selective removal of polysilicon is therefore an essential process for 3D memory device fabrication, which requires the combination of patterning and deep hole etching. In this work, we developed a polysilicon removal method combining dry etching and wet etching steps for hole structure with aspect ratio 10:1 in multilayer device application. Dry etching process opening hard mask layers was found to form block layer against we

APA, Harvard, Vancouver, ISO, and other styles

34

SATO, Kazuya. "Application of Wet Etching. Etching Technology for Various Plastics." Journal of the Surface Finishing Society of Japan 49, no. 10 (1998): 1044–51. http://dx.doi.org/10.4139/sfj.49.1044.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Yao, Yong Zhao, Yukari Ishikawa, Yoshihiro Sugawara, et al. "Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na₂O₂ Additive." Materials Science Forum 679-680 (March 2011): 290–93. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.290.

Full text

Abstract:

We have proposed a new wet etching recipe using molten KOH and Na2O2 as the etchant (“KN etching”) for dislocation revelation in highly doped n-type 4H-SiC (n+-4H-SiC). Threading screw dislocations (TSDs) and threading edge dislocations (TEDs) have been clearly revealed as hexagonal etch pits differing in pit sizes, and basal plane dislocations (BPDs) as seashell-shaped pits. This new etching recipe has provided a solution to the problem that conventional KOH etching is not effective for dislocation identification in 4H-SiC if the electron concentration is high (>mid-1018 cm-3). We have inv

APA, Harvard, Vancouver, ISO, and other styles

36

Du, Jia Qiang, Huan Liu, and Wei Guo Liu. "Wet Etching of Aluminum Periodic Patterns in Micrometer-Scale." Advanced Materials Research 662 (February 2013): 117–21. http://dx.doi.org/10.4028/www.scientific.net/amr.662.117.

Full text

Abstract:

In the process of deep etching of silicon, the metal film or the oxide film served as silicon protective layer needed to be etched before using plasma etching technology. In order to solve the etch rates variance of different aperture sizes and different pitchs periodic patterns, by controlling the water bath temperature and etching time, the etch rates of different aperture sizes and different pitchs periodic patterns at 50 degree centigrade had been developed. Also we contrasted the etching results at different bath temperatures and got the controllable and suitable wet etching bath temperat

APA, Harvard, Vancouver, ISO, and other styles

37

Nie, Lei, Jun Xing Yu, and Kun Zhang. "Multilayer Masking Technique for Deep Isotropic Silicon Wet Etching." Applied Mechanics and Materials 229-231 (November 2012): 2444–47. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.2444.

Full text

Abstract:

A multilayer masking technique was presented aiming at the requirements of deep isotropic silicon wet etching. Because the processing time of deep etching is relatively long and etching rate is high, it is very hard to achieve satisfying etching result by using conventional photoresist or metal single layer mask. Thus multilayer mask consisting of photoresist and metal layers is fabricated to exert respective advantages and avoid disadvantages. Based on its excellent chemical and thermal stabilities and high viscosity, Su-8 was selected as the material of photoresist layer. The metal layer was

APA, Harvard, Vancouver, ISO, and other styles

38

Chen, Hui, Chenyu Bian, Cheng Zhang, Shaojun Wang, and Bingchang Zhang. "Cone Angle Modulation of Silicon Nanocones through Double Etching Processes in Metal-Assisted Chemical Etching." Journal of Physics: Conference Series 2463, no. 1 (2023): 012004. http://dx.doi.org/10.1088/1742-6596/2463/1/012004.

Full text

Abstract:

Abstract All-wet metal-assisted chemical etching (MACE) has been demonstrated as a simple and effective method to fabricate silicon nanocones (SiNCs). The properties of SiNCs strongly depend on their structure parameters such as the cone angle and can be optimized through modulating the cone angle. However, cone angle modulation of SiNCs in all-wet MACE processes has not been achieved. Here, we report the fabrication of SiNCs with different cone angles through double etching processes in all-wet MACE. Large-size silver nanoparticles (AgNPs) were first obtained by solution deposition. After a c

APA, Harvard, Vancouver, ISO, and other styles

39

Shiman, O., V. Gerbreders, E. Sledevskis, and A. Bulanovs. "Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films." Latvian Journal of Physics and Technical Sciences 49, no. 2 (2012): 45–50. http://dx.doi.org/10.2478/v10047-012-0010-8.

Full text

Abstract:

Selective Wet-Etching of Amorphous/Crystallized Sb-Se Thin Films The paper is focused on the development of an in situ real-time method for studying the process of wet chemical etching of thin films. The results of studies demonstrate the adequate etching selectivity for all thin film SbxSe100-x (x = 0, 20, 40, 50, 100) compositions under consideration. Different etching rates for the as-deposited and laser exposed areas were found to depend on the sample composition. The highest achieved etching rate was 1.8 nm/s for Sb40Se60 samples.

APA, Harvard, Vancouver, ISO, and other styles

40

Ko, Ki Hyung, Myung Geun Song, Byung Kwon Cho, Bo Un Yoon, Yu Jin Cho, and Tae Sung Kim. "Retardation Phenomenon of Oxide Removal during the Formation of Dual Gate Oxide via PR-Mask Wet Etching." Solid State Phenomena 219 (September 2014): 24–27. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.24.

Full text

Abstract:

PR-mask oxide wet etching process is generally applied for the formation of dual gate oxide (Gox) transistor (TR) with different thickness of gate oxide. Oxide residues, which could not be removed properly with conventional wet etching process by dHF was observed when PR rework process by strip with SPM and SC1 was preceded before oxide wet etching. The root cause on this oxide removal retardation issue was studied by XPS for the analysis of surface element, SEM for the observation of surface morphology and optical spectroscopy for the measurement of thickness of oxide. It was found that PR re

APA, Harvard, Vancouver, ISO, and other styles

41

Matocha, Kevin, Chris S. Cowen, Richard Beaupre, and Jesse B. Tucker. "Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC." Materials Science Forum 527-529 (October 2006): 983–86. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.983.

Full text

Abstract:

4H-SiC MOS capacitors were used to characterize the effect of reactive-ion etching of the SiC surface on the electrical properties of N2O-grown thermal oxides. The oxide breakdown field reduces from 9.5 MV/cm with wet etching to saturate at 9.0 MV/cm with 30% reactive-ion over-etching. Additionally, the conduction-band offset barrier height, φB, progressively decreases from 2.51 eV with wet etching to 2.46 eV with 45% reactive-ion over-etching.

APA, Harvard, Vancouver, ISO, and other styles

42

Song, Ding, and Wenge Wu. "Study on Electrical and Mechanical Properties of Double-End Supported Elastic Substrate Prepared by Wet Etching Process." Micromachines 15, no. 7 (2024): 929. http://dx.doi.org/10.3390/mi15070929.

Full text

Abstract:

Preparing elastic substrates as a carrier for dual-end supported nickel chromium thin film strain sensors is crucial. Wet etching is a vital microfabrication process widely used in producing microelectronic components for various applications. This article combines lithography and wet etching methods to microprocess the external dimensions and rectangular grooves of 304 stainless steel substrates. The single-factor variable method was used to explore the influence mechanism of FeCl3, HCl, HNO3, and temperature on the etching rate, etching factor, and etching surface roughness. The optimal etch

APA, Harvard, Vancouver, ISO, and other styles

43

Leblois, Therese G., and C. R. Tellier. "Wet Etching of Si Micro-Arrays: Experimental and Theoretical Shapes." Advances in Science and Technology 54 (September 2008): 445–50. http://dx.doi.org/10.4028/www.scientific.net/ast.54.445.

Full text

Abstract:

In this paper emphasis is placed on the wet micromachining of silicon micro-arrays constituted by very small holes. Microfabrication of various Silicon plates is performed in a KOH etchant maintained at constant temperature. Limitations due to the process are given. A self elaborated simulator is used to predict etching shapes of several micro holes. A comparison between experiments and simulation is presented.

APA, Harvard, Vancouver, ISO, and other styles

44

Chen, Long Long, Xi Feng Li, Ji Feng Shi, Hao Zhang, Chun Ya Li, and Jian Hua Zhang. "Analysis of Wet Etching Characteristics of a-IGZO Thin Film." Advanced Materials Research 476-478 (February 2012): 2339–43. http://dx.doi.org/10.4028/www.scientific.net/amr.476-478.2339.

Full text

Abstract:

Amorphous InGaZnO (a-IGZO) films are deposited on the glass substrate by RF sputtering and the influence of wet etching of a-IGZO films, etching rate, over etching features and TFT structure chose are investigated. The results show that Oxalic acid is best chose for IGZO film etching for side etching is about 0.1um , etching rate is 7.42 A/s which is easy to control and taper angle is acute. The traditional G-I-D type structure has been confirmed is not fit for the condition where the IGZO based TFT manufacture. G-D-I structure is tested and can be used in the TFT array manufacture.

APA, Harvard, Vancouver, ISO, and other styles

45

Lamichhane, Shobha Kanta. "Experimental investigation on anisotropic surface properties of crystalline silicon." BIBECHANA 8 (January 15, 2012): 59–66. http://dx.doi.org/10.3126/bibechana.v8i0.4828.

Full text

Abstract:

Anisotropic etching of silicon has been studied by wet potassium hydroxide (KOH) etchant with its variation of temperature and concentration. Results presented here are temperature dependent etch rate along the crystallographic orientations. The etching rate of the (111) surface family is of prime importance for microfabrication. However, the experimental values of the corresponding etch rate are often scattered and the etching mechanism of (111) remains unclear. Etching and activation energy are found to be consistently favorable with the thermal agitation for a given crystal plane. Study dem

APA, Harvard, Vancouver, ISO, and other styles

46

Hirano, Tomoki, Kenya Nishio, Takashi Fukatani, Suguru Saito, Yoshiya Hagimoto, and Hayato Iwamoto. "Characterization of Wet Chemical Atomic Layer Etching of InGaAs." Solid State Phenomena 314 (February 2021): 95–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.95.

Full text

Abstract:

In this work, we characterized the wet chemical atomic layer etching of an InGaAs surface by using various surface analysis methods. For this etching process, H2O2 was used to create a self-limiting oxide layer. Oxide removal was studied for both HCl and NH4OH solutions. Less In oxide tended to remain after the HCl treatment than after the NH4OH treatment, so the combination of H2O2 and HCl is suitable for wet chemical atomic layer etching. In addition, we found that repetition of this etching process does not impact on the oxide amount, surface roughness, and interface state density. Thus, na

APA, Harvard, Vancouver, ISO, and other styles

47

Le, Quoc Toan, Esen Gül Arslan, Kevin Fundu, Jean Philippe Soulie, and Efrain Altamirano-Sanchez. "Wet Cleaning/Etching of NiAl Thin Film." Solid State Phenomena 346 (August 14, 2023): 341–45. http://dx.doi.org/10.4028/p-zaw7hr.

Full text

Abstract:

The effect of various chemical solutions and mixtures on the etch characteristics, roughness change, and surface composition of NiAl, Al, and Ni films were investigated. Both HCl solution (1.82%) and NH4OH (0.6 and 1.45%) solutions were found to have a detrimental effect on NiAl film in terms of material etching (4-point probe results) and surface roughness change (AFM). Within the concentration range applied, adding H2O2 into the HCl or NH4OH solutions resulted in a significant increase of the etching of the NiAl film. A correlation was observed between the magnitude of etching and increase i

APA, Harvard, Vancouver, ISO, and other styles

48

Kamaljeet Singh and S. V. Sharma. "Thin Film Based Micro-Machined Sensor Development and Mitigation of Process Challenges." Nano- i Mikrosistemnaya Tehnika 23, no. 1 (2021): 44–46. http://dx.doi.org/10.17587/nmst.23.44-46.

Full text

Abstract:

Realization of thin film based sensor employing bulk micro-machined process using wet chemistry is challenging due to lateral etching phenomena. This phenomenon of convex corner undercutting is associated with wet micromachining process where differential etching is required. The challenge of having differential etching to achieve varied depth in close vicinity imposes extra constraint on the process. The present requirement simultaneously etching of closely spaced tunnel and cavity from back side having varied depth keeping intact front side layers is the main bottleneck which was circumvente

APA, Harvard, Vancouver, ISO, and other styles

49

Liu, Ze Wen, Tian Ruo Zhang, Li Tian Liu, and Zhi Jian Li. "Realization of Silicon Nitride Template for Nanoimprint: A First Result." Solid State Phenomena 121-123 (March 2007): 669–72. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.669.

Full text

Abstract:

A first result of realization of silicon nitride templates on 100mm silicon wafer as nanoinprint mold using simple wet etching method is reported in this paper. The process is based on traditional photolithograph and following buffer HF wet etching, which started from a p-type wafer with 400nm thermal silicon oxide, 200nm PECVD silicon nitride and 400nm PECVD silicon oxide sandwich layer. After patterning with lithography, the patterned resist is used as mask for the isotropic underlayer wet etching of silicon dioxide with buffer HF solution. Using the obtained nanosacle silicon dioxide lines

APA, Harvard, Vancouver, ISO, and other styles

50

Capecchi, Simone, Tanya Atanasova, Reiner Willeke, Michael Parthenopoulos, Christian Pizzetti, and Jerome Daviot. "Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process." Solid State Phenomena 255 (September 2016): 291–96. http://dx.doi.org/10.4028/www.scientific.net/ssp.255.291.

Full text

Abstract:

This paper demonstrates how a low undercut Ti etchant developed by Technic France can be successfully introduced in a high volume manufacturing Fab for etching the under bump metallization (UBM). The Ti etchant has been tested on 300mm wafer production equipment in GLOBALFOUNDRIES. The Ti etchant evaluation has been carried out in collaboration with the Fraunhofer IZM-ASSID institute.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!