Relevant bibliographies by topics / Wide-bandgap devices

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'Wide-bandgap devices'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "Wide-bandgap devices"

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Sugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.

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In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size
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Bader, Samuel James, Hyunjea Lee, Reet Chaudhuri, et al. "Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices." IEEE Transactions on Electron Devices 67, no. 10 (2020): 4010–20. http://dx.doi.org/10.1109/ted.2020.3010471.

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Lee, Kuan-Wei, Chuan-Hsi Liu, and Durga Misra. "Wide Bandgap Materials for Semiconductor Devices." Microelectronics Reliability 91 (December 2018): 306. http://dx.doi.org/10.1016/j.microrel.2018.10.010.

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Yoder, M. N. "Wide bandgap semiconductor materials and devices." IEEE Transactions on Electron Devices 43, no. 10 (1996): 1633–36. http://dx.doi.org/10.1109/16.536807.

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Bindra, Ashok. "Wide-Bandgap Power Devices: Adoption Gathers Momentum." IEEE Power Electronics Magazine 5, no. 1 (2018): 22–27. http://dx.doi.org/10.1109/mpel.2017.2782404.

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Simin, Grigory. "Wide Bandgap Devices with Non-Ohmic Contacts." ECS Transactions 3, no. 5 (2019): 381–87. http://dx.doi.org/10.1149/1.2357228.

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Simin, G., and Z. J. Yang. "RF-Enhanced Contacts to Wide-Bandgap Devices." IEEE Electron Device Letters 28, no. 1 (2007): 2–4. http://dx.doi.org/10.1109/led.2006.887627.

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Mills, Alan. "Progress in wide-bandgap devices and materials." III-Vs Review 14, no. 7 (2001): 38–43. http://dx.doi.org/10.1016/s0961-1290(01)80515-9.

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Zolper, J. C., and B. V. Shanabrook. "Special issue on wide bandgap semiconductor devices." Proceedings of the IEEE 90, no. 6 (2002): 939–41. http://dx.doi.org/10.1109/jproc.2002.1021559.

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Östling, Mikael. "High power devices in wide bandgap semiconductors." Science China Information Sciences 54, no. 5 (2011): 1087–93. http://dx.doi.org/10.1007/s11432-011-4232-9.

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Dissertations / Theses on the topic "Wide-bandgap devices"

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Elf, Patric. "Radiation effects on wide bandgap semiconductor devices." Thesis, KTH, Tillämpad fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-283320.

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Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs are especially useful in harsh operation environments e.g. in the combustion engine, exhaust, space, and medical instruments where the reliability and resilience are highly demanded. In this thesis the e ect of proton irradiation on the GaN HEMTs as well as the possible incorporation of them in bio
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Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.

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Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that mus
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Buzzo, Marco. "Dopant imaging and profiling of wide bandgap semiconductor devices /." Konstanz : Hartung-Gorre, 2007. http://www.loc.gov/catdir/toc/fy0715/2007427206.html.

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Kozak, Joseph Peter. "Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/104874.

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As power conversion technology is being integrated further into high-reliability environments such as aerospace and electric vehicle applications, a full analysis and understanding of the system's robustness under operating conditions inside and outside the safe-operating-area is necessary. The robustness of power semiconductor devices, a primary component of power converters, has been traditionally evaluated through qualification tests that were developed for legacy silicon (Si) technologies. However, new devices have been commercialized using wide bandgap (WBG) semiconductors including silic
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Dhakal, Shankar. "Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1532703747534188.

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Alexakis, Petros. "Reliability of wide bandgap semiconductor devices under unconventional mode conduction." Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/105611/.

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The use of power electronics is increasing in an exponential form. The need of power devices to be faster, block higher voltages and reduce their losses is leading to a fundamental change in the device architecture and choice of material. Gallium nitride and Silicon carbide are the materials of choice and commercial devices are available. Diamond and gallium oxide are materials that are considered for the future and they will push the boundaries of power electronics even further. There are well developed tools that can simulate the behavior of a power device is a very accurate way and they can
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Wei, Yu. "A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/83238.

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In the application of power inverters, power density has become a key design specification where it has stringent requirements on system size and weight. Achieving high power density need to combine lasted wide bandgap (WBG) device technology and high switching frequency to reduce passive filter size thus further shrink overall space. While still maintaining decent power conversion efficiency and low electromagnetic interference (EMI) with higher switching frequency, soft-switching needs to be implemented. A novel auxiliary resonant snubber is introduced. The design and operation are carried o
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Rashid, Suhail Jeremy. "High voltage packaging technology for wide bandgap power semiconductor devices." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/252098.

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Ghin, Raymond. "Avalanche multiplication and breakdown in wide bandgap semiconductors." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301673.

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Lades, Martin. "Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC /." [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=962057827.

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Books on the topic "Wide-bandgap devices"

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Buzzo, Marco. Dopant imaging and profiling of wide bandgap semiconductor devices. Hartung-Gorre, 2007.

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Szweda, Roy. Gallium nitride & related wide bandgap materials & devices: A market & technology overview 1996-2001. Elsevier Advanced Technology, 1997.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Electrochemical Society, 2007.

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State-of-the-Art, Program on Compound Semiconductors (47th 2007 Washington DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Electrochemical Society, 2007.

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State-of-the-Art Program on Compound Semiconductors (47th 2007 Washington, DC). State-of-the-Art Program on Compound Semiconductorss 47 (SOTAPOCS 47) and Wide Bandgap Semiconductor Materials and Devices 8. Edited by Wang J, Electrochemical Society Meeting, Electrochemical Society. Electronics and Photonics Division., Electrochemical Society. Luminescence and Display Materials Division., Electrochemical Society Sensor Division, and Symposium on Wide Bandgap Semiconductor Materials and Devices (8th : 2007 : Washington, DC). Electrochemical Society, 2007.

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7

Ferro, Gabriel. 2010 wide bandgap cubic semiconductors: From growth to devices : proceedings of the E-MRS Symposium F, Strasbourg, France, 8-10 June 2010. Edited by European Materials Research Society. Meeting, American Institute of Physics, and European Science Foundation. American Institute of Physics, 2010.

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Symposium on Wide Bandgap Semiconductors and Devices (1995 Chicago, Ill.). Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII). Electrochemical Society, 1995.

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Philadelphia, Pa ). State-of-the-Art Program on Compound Semiconductors (36th 2002. State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II: Proceedings of the international symposia. Electrochemical Society, 2002.

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State-of-the-Art Program on Compound Semiconductors (45rd 2006 Cancun, Mex.). State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) and Wide Bandgap Semiconductor Materials and Devices 7 / editors, F. Ren ... [et al.]. Electrochemical Society, 2006.

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Book chapters on the topic "Wide-bandgap devices"

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Kawakami, Yoichi, Satoshi Kamiyama, Gen-Ichi Hatakoshi, et al. "Photonic Devices." In Wide Bandgap Semiconductors. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_3.

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Miyamoto, Hironobu, Manabu Arai, Hiroshi Kawarada, et al. "Electronic Devices." In Wide Bandgap Semiconductors. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_4.

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Kumano, Hidekazu, Ikuo Suemune, Katsumi Kishino, et al. "Novel Nano-Heterostructure Materials and Related Devices." In Wide Bandgap Semiconductors. Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-47235-3_5.

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Lutz, Josef, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker. "MOS Transistors and Field Controlled Wide Bandgap Devices." In Semiconductor Power Devices. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-70917-8_9.

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Cavenett, B. C., K. A. Prior, S. Y. Wang, and J. Simpson. "Wide Bandgap II–VI Light Emitting Devices." In Optical Information Technology. Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-78140-7_12.

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Singh, Rajan, T. R. Lenka, D. Panda, et al. "RF Performance of Ultra-wide Bandgap HEMTs." In Emerging Trends in Terahertz Solid-State Physics and Devices. Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3235-1_4.

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Shimada, Ryoko, Ümit Özgür, and Hadis Morkoç. "Polariton Devices Based on Wide Bandgap Semiconductor Microcavities." In Nanoscale Photonics and Optoelectronics. Springer New York, 2010. http://dx.doi.org/10.1007/978-1-4419-7587-4_3.

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Mazumder, S. K., A. Mojab, and H. Riazmontazer. "Optically-Switched Wide-Bandgap Power Semiconductor Devices and Device-Transition Control." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_14.

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Gupta, K. M., and Nishu Gupta. "Overview of Crystals, Bonding, Imperfections, Atomic Models, Narrow and Wide Bandgap Semiconductors and, Semiconductor Devices." In Advanced Semiconducting Materials and Devices. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_2.

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Hamada, Kimimori. "Present Status and Future Prospects for Electronics in Electric Vehicles/Hybrid Electric Vehicles and Expectations for Wide-Bandgap Semiconductor Devices." In Silicon Carbide. Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch1.

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Conference papers on the topic "Wide-bandgap devices"

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"Wide bandgap devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354926.

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"Wide Bandgap Devices." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373634.

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"Wide bandgap devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548291.

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"Wide bandgap devices." In 2010 68th Annual Device Research Conference (DRC). IEEE, 2010. http://dx.doi.org/10.1109/drc.2010.5551903.

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"Wide-bandgap power devices." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548465.

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"Emerging wide-bandgap devices." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175547.

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Palmour, John. "Energy Efficient Wide Bandgap Devices." In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319904.

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Chan, Ian, C. T. Yen, C. C. Hung, and C. Y. Lee. "Wide Bandgap SiC power devices." In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021228.

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"Wide bandgap/high speed devices." In 2012 70th Annual Device Research Conference (DRC). IEEE, 2012. http://dx.doi.org/10.1109/drc.2012.6257057.

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Bellotti, Enrico. "Computational electronics of wide-bandgap semiconductors." In Integrated Optoelectronics Devices, edited by Marek Osinski, Hiroshi Amano, and Peter Blood. SPIE, 2003. http://dx.doi.org/10.1117/12.483606.

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Reports on the topic "Wide-bandgap devices"

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Crawford, M. H., W. W. Chow, A. F. Wright, et al. Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/5901.

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Elhadj, S. Laser-Based Defect Reduction in Wide Bandgap Semiconductors Used in Radiation-Voltaics Devices: Radiation Hardening and Annealing. Office of Scientific and Technical Information (OSTI), 2019. http://dx.doi.org/10.2172/1571731.

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