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Dissertations / Theses on the topic 'Wide-bandgap devices'

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Published: 4 June 2021

Last updated: 1 February 2022

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1

Elf, Patric. "Radiation effects on wide bandgap semiconductor devices." Thesis, KTH, Tillämpad fysik, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-283320.

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Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs are especially useful in harsh operation environments e.g. in the combustion engine, exhaust, space, and medical instruments where the reliability and resilience are highly demanded. In this thesis the e ect of proton irradiation on the GaN HEMTs as well as the possible incorporation of them in bio

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2

Grummel, Brian. "HIGH TEMPERATURE PACKAGING FOR WIDE BANDGAP SEMICONDUCTOR DEVICES." Master's thesis, University of Central Florida, 2008. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3200.

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Currently, wide bandgap semiconductor devices feature increased efficiency, higher current handling capabilities, and higher reverse blocking voltages than silicon devices while recent fabrication advances have them drawing near to the marketplace. However these new semiconductors are in need of new packaging that will allow for their application in several important uses including hybrid electrical vehicles, new and existing energy sources, and increased efficiency in multiple new and existing technologies. Also, current power module designs for silicon devices are rife with problems that mus

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3

Buzzo, Marco. "Dopant imaging and profiling of wide bandgap semiconductor devices /." Konstanz : Hartung-Gorre, 2007. http://www.loc.gov/catdir/toc/fy0715/2007427206.html.

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4

Kozak, Joseph Peter. "Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices." Diss., Virginia Tech, 2021. http://hdl.handle.net/10919/104874.

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As power conversion technology is being integrated further into high-reliability environments such as aerospace and electric vehicle applications, a full analysis and understanding of the system's robustness under operating conditions inside and outside the safe-operating-area is necessary. The robustness of power semiconductor devices, a primary component of power converters, has been traditionally evaluated through qualification tests that were developed for legacy silicon (Si) technologies. However, new devices have been commercialized using wide bandgap (WBG) semiconductors including silic

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5

Dhakal, Shankar. "Circuit Level Reliability Considerations in Wide Bandgap Semiconductor Devices." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1532703747534188.

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6

Alexakis, Petros. "Reliability of wide bandgap semiconductor devices under unconventional mode conduction." Thesis, University of Warwick, 2017. http://wrap.warwick.ac.uk/105611/.

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The use of power electronics is increasing in an exponential form. The need of power devices to be faster, block higher voltages and reduce their losses is leading to a fundamental change in the device architecture and choice of material. Gallium nitride and Silicon carbide are the materials of choice and commercial devices are available. Diamond and gallium oxide are materials that are considered for the future and they will push the boundaries of power electronics even further. There are well developed tools that can simulate the behavior of a power device is a very accurate way and they can

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7

Wei, Yu. "A Novel Auxiliary Resonant Snubber Inverter Using Wide Bandgap Devices." Thesis, Virginia Tech, 2018. http://hdl.handle.net/10919/83238.

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In the application of power inverters, power density has become a key design specification where it has stringent requirements on system size and weight. Achieving high power density need to combine lasted wide bandgap (WBG) device technology and high switching frequency to reduce passive filter size thus further shrink overall space. While still maintaining decent power conversion efficiency and low electromagnetic interference (EMI) with higher switching frequency, soft-switching needs to be implemented. A novel auxiliary resonant snubber is introduced. The design and operation are carried o

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8

Rashid, Suhail Jeremy. "High voltage packaging technology for wide bandgap power semiconductor devices." Thesis, University of Cambridge, 2008. https://www.repository.cam.ac.uk/handle/1810/252098.

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9

Ghin, Raymond. "Avalanche multiplication and breakdown in wide bandgap semiconductors." Thesis, University of Sheffield, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.301673.

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10

Lades, Martin. "Modeling and simulation of wide bandgap semiconductor devices 4H/6H-SiC /." [S.l. : s.n.], 2000. http://deposit.ddb.de/cgi-bin/dokserv?idn=962057827.

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11

Koganti, Naga Babu. "Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices." University of Toledo / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=toledo153311831687909.

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12

Razzak, Towhidur. "Design and Fabrication of High Performance Ultra-Wide Bandgap AlGaN Devices." The Ohio State University, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu1619031091410235.

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13

Grummel, Brian. "Design and Characterization of High Temperature Packaging for Wide-Bandgap Semiconductor Devices." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5231.

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Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) d

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14

Montañez, Huamán Liz Margarita. "Synthesis and characterization of wide bandgap semiconductors doped with terbium for electroluminescent devices." Master's thesis, Pontificia Universidad Católica del Perú, 2016. http://tesis.pucp.edu.pe/repositorio/handle/123456789/6999.

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In this work, stoichiometric, structural and light emission properties of amorphous wide bandgap semiconductor materials doped with terbium are presented. The amorphous nature of the thin films was confirmed by X-ray diffraction under grazing incidence. Fourier transform infrared spectroscopy spectra exhibit the formation of oxygen bonded elements and X-ray photoelectron spectroscopy reveals the formation of aluminum oxynitride and silicon oxycarbide as host matrices. The thin films were annealed at temperatures ranging from 300 °C to 1000 °C using a rapid thermal processing furnace. The

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15

Sathyanarayanan, Arvind Shanmuganaathan. "Analysis of Reflected Wave Phenomenon on Wide Bandgap Device Switching Performance." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu149273424426787.

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16

Hontz, Michael Robert. "Next Generation Integrated Behavioral and Physics-based Modeling of Wide Bandgap Semiconductor Devices for Power Electronics." University of Toledo / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1556718365514067.

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17

Li, Ke. "Wide bandgap (SiC/GaN) power devices characterization and modeling : application to HF power converters." Thesis, Lille 1, 2014. http://www.theses.fr/2014LIL10080/document.

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Les matériaux semi-conducteurs à grand gap tels que le carbure de silicium (SiC) et le nitrure de gallium (GaN) sont utilisés pour fabriquer des composants semi-conducteurs de puissance, qui vont jouer un rôle très important dans le développement des futurs systèmes de conversion d'énergie. L'objectif est de réaliser des convertisseurs avec de meilleurs rendements énergétiques et fonctionnant à haute température. Pour atteindre cet objectif, il est donc nécessaire de bien connaître les caractéristiques de ces nouveaux composants afin de développer des modèles qui seront utilisés lors de la con

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18

Devarapally, Rahul Reddy. "Survey of applications of WBG devices in power electronics." Kansas State University, 2016. http://hdl.handle.net/2097/32665.

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Master of Science<br>Department of Electrical and Computer Engineering<br>Behrooz Mirafzal<br>Wide bandgap devices have gained increasing attention in the market of power electronics for their ability to perform even in harsh environments. The high voltage blocking and high temperature withstanding capabilities make them outperform existing Silicon devices. They are expected to find places in future traction systems, electric vehicles, LED lightning and renewable energy engineering systems. In spite of several other advantages later mentioned in this paper, WBG devices also face a few challeng

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19

Lyu, Xintong. "Power Module Design and Protection for Medium Voltage Silicon Carbide Devices." The Ohio State University, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu160856011259485.

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20

Li, Cong. "High Frequency High Boost Ratio Dc-dc Converters with Wide Bandgap Devices for PV System Applications." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1411858489.

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21

Alsolami, Mohammed Faham. "Wide Bandgap (WBG) Devices Based Switched Capacitor Multiport Multilevel SinglePhase AC/DC/AC Converter for UPS Applications." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461327268.

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22

Nakagawara, Tanner A. "Optical Spectroscopy of Wide Bandgap Semiconductor Heterostructures and Group-IV Alloy Quantum Dots." VCU Scholars Compass, 2017. https://scholarscompass.vcu.edu/etd/5195.

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Efficient and robust blue InGaN multiple quantum well (MQW) light emitters have become ubiquitous; however, they still have unattained theoretical potential. It is widely accepted that “localization” of carriers due to indium fluctuations theoretically enhance their efficiency by moderating defect-associated nonradiative recombination. To help develop a complete understanding of localization effects on carrier dynamics, this thesis explores degree of localization in InGaN MQWs and its dependence on well thickness and number of wells, through temperature and power dependent photoluminescence me

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23

Zhao, Xiaonan. "High-Efficiency and High-Power Density DC-DC Power Conversion Using Wide Bandgap Devices for Modular Photovoltaic Applications." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/89025.

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With the development of solar energy, power conversion systems responsible for energy delivering from photovoltaic (PV) modules to ac or dc grid attract wide attentions and have significantly increased installations worldwide. Modular power conversion system has the highest efficiency of maximum power point tacking (MPPT), which can transfer more solar power to electricity. However, this system suffers the drawbacks of low power conversion efficiency and high cost due to a large number of power electronics converters. High-power density can provide potentials to reduce cost through the reducti

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24

Koné, Sodjan. "Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin." Thesis, Toulouse, INPT, 2011. http://www.theses.fr/2011INPT0048/document.

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A mesure que les demandes dans le domaine de l'électronique de puissance tendent vers des conditions de plus en plus extrêmes (forte densité de puissance, haute fréquence, haute température,…), l'évolution des systèmes de traitement de l'énergie électrique se heurte aux limites physiques du silicium. Une nouvelle approche basée sur l'utilisation des matériaux semi-conducteurs grand gap permettra de lever ces limites. Parmi ces matériaux, le diamant possède les propriétés les plus intéressantes pour l'électronique de puissance: champ de rupture et conductivité thermique exceptionnels, grandes m

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25

Chmielewski, Daniel Joseph. "III-V Metamorphic Materials and Devices for Multijunction Solar Cells Grown via MBE and MOCVD." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1534707692114982.

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26

Gabrysch, Markus. "Charge Transport in Single-crystalline CVD Diamond." Doctoral thesis, Uppsala universitet, Elektricitetslära, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-122794.

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Diamond is a semiconductor with many superior material properties such as high breakdown field, high saturation velocity, high carrier mobilities and the highest thermal conductivity of all materials. These extreme properties, as compared to other (wide bandgap) semiconductors, make it desirable to develop single-crystalline epitaxial diamond films for electronic device and detector applications. Future diamond devices, such as power diodes, photoconductive switches and high-frequency field effect transistors, could in principle deliver outstanding performance due to diamond's excellent intrin

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27

Mahadik, Nadeemullah A. "Non-destructive x-ray characterization of wide-bandgap semiconductor materials and device structures." Fairfax, VA : George Mason University, 2008. http://hdl.handle.net/1920/3404.

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Thesis (Ph.D.)--George Mason University, 2008.<br>Vita: p. 104. Thesis director: Mulpuri V. Rao. Submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical and Computer Engineering. Title from PDF t.p. (viewed Mar. 17, 2009). Includes bibliographical references (p. 99-103). Also issued in print.

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28

Shao, Ye. "Study of wide bandgap semiconductor nanowire field effect transistor and resonant tunneling device." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1448230793.

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29

Paredes, Camacho Alejandro. "Active gate drivers for high-frequency application of SiC MOSFETs." Doctoral thesis, Universitat Politècnica de Catalunya, 2020. http://hdl.handle.net/10803/669291.

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The trend in the development of power converters is focused on efficient systems with high power density, reliability and low cost. The challenges to cover the new power converters requirements are mainly concentered on the use of new switching-device technologies such as silicon carbide MOSFETs (SiC). SiC MOSFETs have better characteristics than their silicon counterparts; they have low conduction resistance, can work at higher switching speeds and can operate at higher temperature and voltage levels. Despite the advantages of SiC transistors, operating at high switching frequencies, with the

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30

Deshpande, Amol Rajendrakumar. "Design of A Silicon and Wide-Bandgap Device Based Hybrid Switch for Power Electronics Converter." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1461238625.

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31

Swenberg, Johanes F. N. McGill T. C. McGill T. C. "Development of wide-bandgap II-VI semiconductor light-emitting device technology based on the graded injector design /." Diss., Pasadena, Calif. : California Institute of Technology, 1995. http://resolver.caltech.edu/CaltechETD:etd-10122007-142152.

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32

Lashway, Christopher R. "Resilient and Real-time Control for the Optimum Management of Hybrid Energy Storage Systems with Distributed Dynamic Demands." FIU Digital Commons, 2017. https://digitalcommons.fiu.edu/etd/3515.

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A continuous increase in demands from the utility grid and traction applications have steered public attention toward the integration of energy storage (ES) and hybrid ES (HESS) solutions. Modern technologies are no longer limited to batteries, but can include supercapacitors (SC) and flywheel electromechanical ES well. However, insufficient control and algorithms to monitor these devices can result in a wide range of operational issues. A modern day control platform must have a deep understanding of the source. In this dissertation, specialized modular Energy Storage Management Controllers (E

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33

Rafique, Subrina. "Growth, Characterization and Device Demonstration of Ultra-Wide Bandgap ß-Ga₂O₃ by Low Pressure Chemical Vapor Deposition." Case Western Reserve University School of Graduate Studies / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=case1512652677980762.

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34

Allen, Noah Patrick. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2004. http://hdl.handle.net/10919/102924.

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Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material defects, introduced during growth and fabrication, must be minimized. Otherwise, theoretical limits of operation cannot be achieved. In this dissertation, the non-ideal current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model

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Allen, Noah P. "Electrical Characterization of Gallium Nitride Drift Layers and Schottky Diodes." Diss., Virginia Tech, 2019. http://hdl.handle.net/10919/102924.

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Interest in wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga 2 O 3 ) and diamond has increased due to their ability to deliver high power, high switching frequency and low loss electronic devices for power conversion applications. To meet these requirements, semiconductor material defects, introduced during growth and fabrication, must be minimized. Otherwise, theoretical limits of operation cannot be achieved. In this dissertation, the non-ideal current- voltage (IV) behavior of GaN-based Schottky diodes is discussed first. Here, a new model

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36

Xia, Zhanbo. "Materials and Device Engineering for High Performance β-Ga2O3-based Electronics". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1587688595358557.

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37

Lai, Ying-Yu, and 賴映佑. "Study of wide-bandgap semiconductor planar microcavity laser devices." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/73068859300140660100.

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博士<br>國立交通大學<br>光電工程研究所<br>103<br>In planar microcavities (MCs), beside the vertical-cavity surface-emitting laser (VCSEL) action, another low threshold laser could be generated by the Bose-Einstein condensation of cavity-polaritons, named polariton laser. Wide-bandgap materials including ZnO and GaN have a high potential on making VCSELs and polariton lasers due to their high exciton binding energies. In this thesis, we report an electrically injected GaN-based VCSEL and an optically pumped ZnO polariton laser. Through simulation, we found that transparent conducting layer and lateral confine

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38

Kao, Chi-Joe, and 高治舟. "The application of surface insulating layer on wide-bandgap semiconductor devices." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/26482128824848849878.

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博士<br>國立中央大學<br>物理研究所<br>93<br>Abstracts In this dissertation, the applications of insulators/oxides on GaN-based MSM photodectors or GaN-, ZnO-based FETs are performed. Several application cases and theories of insulator on GaN- and ZnO-based devices are introduced here: GaN-based MSM UV photodetectors with a low-temperature grown GaN (LT-GaN) layer is demonstrated first. It was found that we could achieve a two-order of magnitude smaller, dark-current of GaN MSM photodetector by employing a LT-GaN surface insulating layer. This result could be attributed to the larger Schottky-barrie

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39

Bandić, Zvonimir Z. "Novel devices employing epitaxial wide bandgap semiconductors : physics, electronics and materials characterization." Thesis, 2000. https://thesis.library.caltech.edu/6096/2/Bandic_zz_2000.pdf.

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This thesis describes the developments of novel semiconductor devices based on epitaxial wide bandgap semiconductors GaN and ZnS. The number of interesting and exciting results in physics, electronics and materials science of these systems were found in studies motivated by these devices. This thesis consists of three major topics, structural characterization and kinetic growth modeling of the GaNAs/GaAs superlattices, structural and optical characterization and solid phase recrystallization of ZnS thin films grown on GaN and sapphire substrates, and design and fabrication of GaN high power de

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40

Li-ChiPeng and 彭立琪. "Wide Bandgap III-Nitride-based Optoelectronic Devices Grown by Metalorganic Vapor Phase Epitaxy." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/84978359794927842251.

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博士<br>國立成功大學<br>光電科學與工程學系<br>100<br>In this dissertation, growth and fabrication of III-nitride-based optoelectronic devices by MOVPE have been studied. Several methods used to improve output power efficiency of GaN-based blue light emitting diodes (LEDs) have been studied. GaN-based blue LEDs with textured sidewalls and micro-scale pillars around mesa region could enhance light efficiency about 26% by reducing the total internal reflection of light inside the LED structure. Furthermore, comparison of conventional LEDs, the LEDs combining with textured sidewalls, GaN micro-pillars around the m

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41

Lades, Martin [Verfasser]. "Modeling and simulation of wide bandgap semiconductor devices : 4H/6H-SiC / Martin Lades." 2000. http://d-nb.info/962057827/34.

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42

Liao, Long-De, and 廖隆德. "Design and Implementation of Digital Controlled Interleaved Power Factor Corrector with Wide Bandgap Devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6a8ms2.

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碩士<br>國立臺北科技大學<br>電機工程系電力電子產業研發碩士專班<br>105<br>The objective of this thesis is to design and implement an interleaved power factor corrector with wide bandgap devices. Compared with traditional silicon power devices, the gallium nitride power devices have the advantages of high electron mobility, high saturable velocity, high electrical field strength and low on-resistance. The switching frequency can be increased without increasing the excessive switching loss in order to reduce the magnetic components size and increase power density. The design specifications include: output power rating of 7

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Lin, Jia-Hong, and 林佳鴻. "Design and Implementation of a Semi-Bridgeless Power Factor Corrector with Wide Bandgap Devices." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/dmvb8n.

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碩士<br>國立臺北科技大學<br>電機工程系電力電子產業碩士專班<br>107<br>The main purpose of this thesis is to design and implement a semi-bridgeless power factor corrector (PFC) by using wide bandgap device. The characteristics of wide bandgap device is utilized to increase the switching frequency and the volume of the required inductor is reduced. This thesis uses the average current control method to make the source current can trace source voltage to improve the power factor and stabilize the output voltage. Compared to the traditional power factor correctors, the number of the semiconductor components in the curr

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Liao, Bo-Wei, and 廖博偉. "Design and Implementation of Digital Controlled Bridgeless Power Factor Corrector with Wide Bandgap Devices." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/dqb44m.

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碩士<br>國立臺北科技大學<br>電機工程系電力電子產業碩士專班<br>106<br>The objective of this thesis is to design and implement a bridgeless power factor corrector with wide bandgap devices. Compared with traditional silicon power devices, the gallium nitride power devices have the advantages of low on-resistance, high electron mobility, high saturable velocity and high electrical field strength. The switching frequency can be increased without increasing the excessive switching loss in order to reduce the magnetic component sizes and increase power density. The implemented bridgeless power factor corrector has specifica

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45

Lu, Kai-Yuan, and 盧楷元. "Design and Implementation of Digital Controlled Semi-Bridgeless Interleaved Power Factor Corrector with Wide Bandgap Devices." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/85f99w.

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碩士<br>國立臺北科技大學<br>電機工程系電力電子產業碩士專班<br>106<br>The objective of this thesis is to design and implement an semi-bridgeless interleaved power factor corrector with wide bandgap devices. The average current control method is used for PFC control. The two switches are controlled with 180° out of phase to provide interleaved operation. Therefore, the input current ripple can be reduced. The wide bandgap device includes GaN power device and SiC Schottky diode. The switching frequency can be increased in order to reduce the magnetic components size and increase power density. The specifications of the c

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46

Lin, Yang-Ming, and 林陽明. "Design and Implementation of Digital Controlled Interleaved Power Factor Corrector with Universal Input Voltage and Wide Bandgap Devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/b4jp57.

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碩士<br>國立臺北科技大學<br>電機工程系電力電子產業研發碩士專班<br>105<br>The objective of this thesis is to design and implement an interleaved power factor corrector with universal input voltage and wide bandgap devices. The specifications of the converter include: input voltage from 115 V/60 Hz to 230 V/60 Hz, output voltage 400 V, output power 760 W and switching frequency 200 kHz. The control software is developed and verified using a microprocessor, TMS320F28035. The wide bandgap device includes GaN power device and SiC Schottky diode. The converter volume is reduced due to higher switching frequency. The two switc

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47

Rezanezhad, Gatabi Iman. "Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications." Thesis, 2013. http://hdl.handle.net/1969.1/151047.

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GaN RF switches are widely used in today’s communication systems. With digital communications getting more and more popular nowadays, the need for improving the performance of involved RF switches is inevitable. Designing low ON-state resistance GaN switches are exceedingly important to improve the switch insertion loss, isolation and power loss. Moreover, considerations need to be taken into account to improve the switching speed of the involved GaN HEMTs. In this dissertation, a new GaN HEMT structure called “Tunnel MOS Heterostructure FET (TMOSHFET)” is introduced which has lower ON-state

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48

Shyu, Chen Hong, and 陳泓旭. "Design and Implementation of Full Bridge Resonant Converter with 500 kHz Switching Frequency Using Wide Bandgap Power Semiconductor Devices." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/7jwdp2.

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碩士<br>國立臺北科技大學<br>電機工程系電力電子產業研發碩士專班<br>105<br>GaN HEMTs are already devoloped in recent years, stability of GaN HEMTs has grow year by year, it has more suitable choosing for any specifications. The characteristic of GaN HEMTs is better than Si MOSFET in every way. Used GaN HEMTs component can let converter operate in higher frequency. The objective of this thesis is to design and implement a digital-controllor full bridge resonant converter. Because of parasitic inductance let MOSFET effect large voltage stress when MOSFET operate the high frequency. Therefore, the thesis used advantage of pl

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Rigutti, Lorenzo. "Study of transformation of defect states in GaN- and SiC-based materials and devices." Phd thesis, 2006. http://tel.archives-ouvertes.fr/tel-00443587.

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The present thesis is a study of the evolution of defect states in devices based on wide bandgap semiconductors. The attention has been focused on light-emitting diodes based on GaN and Schottky diodes based on SiC, these latter a basic structure for the fabrication of high-power rectifiers and ionising particle detectors. In both cases, we studied the defects and their electronic properties by means of the following experimental techniques: current-voltage (I-V) measurements, in order to investigate the effect of imperfections on the transport properties of the material/device; capacitance-vo

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"Robust Control of Wide Bandgap Power Electronics Device Enabled Smart Grid." Doctoral diss., 2017. http://hdl.handle.net/2286/R.I.46215.

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abstract: In recent years, wide bandgap (WBG) devices enable power converters with higher power density and higher efficiency. On the other hand, smart grid technologies are getting mature due to new battery technology and computer technology. In the near future, the two technologies will form the next generation of smart grid enabled by WBG devices. This dissertation deals with two applications: silicon carbide (SiC) device used for medium voltage level interface (7.2 kV to 240 V) and gallium nitride (GaN) device used for low voltage level interface (240 V/120 V). A 20 kW solid state transfor

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