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Journal articles on the topic 'Wide-bandgap devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Sugimoto, M., H. Ueda, T. Uesugi, and T. kachi. "WIDE-BANDGAP SEMICONDUCTOR DEVICES FOR AUTOMOTIVE APPLICATIONS." International Journal of High Speed Electronics and Systems 17, no. 01 (2007): 3–9. http://dx.doi.org/10.1142/s012915640700414x.

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In this paper, we discuss requirements of power devices for automotive applications, especially hybrid vehicles and the development of GaN power devices at Toyota. We fabricated AlGaN/GaN HEMTs and measured their characteristics. The maximum breakdown voltage was over 600V. The drain current with a gate width of 31mm was over 8A. A thermograph image of the HEMT under high current operation shows the AlGaN/GaN HEMT operated at more than 300°C. And we confirmed the operation of a vertical GaN device. All the results of the GaN HEMTs are really promising to realize high performance and small size

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2

Bader, Samuel James, Hyunjea Lee, Reet Chaudhuri, et al. "Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices." IEEE Transactions on Electron Devices 67, no. 10 (2020): 4010–20. http://dx.doi.org/10.1109/ted.2020.3010471.

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3

Lee, Kuan-Wei, Chuan-Hsi Liu, and Durga Misra. "Wide Bandgap Materials for Semiconductor Devices." Microelectronics Reliability 91 (December 2018): 306. http://dx.doi.org/10.1016/j.microrel.2018.10.010.

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4

Yoder, M. N. "Wide bandgap semiconductor materials and devices." IEEE Transactions on Electron Devices 43, no. 10 (1996): 1633–36. http://dx.doi.org/10.1109/16.536807.

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5

Bindra, Ashok. "Wide-Bandgap Power Devices: Adoption Gathers Momentum." IEEE Power Electronics Magazine 5, no. 1 (2018): 22–27. http://dx.doi.org/10.1109/mpel.2017.2782404.

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6

Simin, Grigory. "Wide Bandgap Devices with Non-Ohmic Contacts." ECS Transactions 3, no. 5 (2019): 381–87. http://dx.doi.org/10.1149/1.2357228.

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7

Simin, G., and Z. J. Yang. "RF-Enhanced Contacts to Wide-Bandgap Devices." IEEE Electron Device Letters 28, no. 1 (2007): 2–4. http://dx.doi.org/10.1109/led.2006.887627.

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8

Mills, Alan. "Progress in wide-bandgap devices and materials." III-Vs Review 14, no. 7 (2001): 38–43. http://dx.doi.org/10.1016/s0961-1290(01)80515-9.

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9

Zolper, J. C., and B. V. Shanabrook. "Special issue on wide bandgap semiconductor devices." Proceedings of the IEEE 90, no. 6 (2002): 939–41. http://dx.doi.org/10.1109/jproc.2002.1021559.

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10

Östling, Mikael. "High power devices in wide bandgap semiconductors." Science China Information Sciences 54, no. 5 (2011): 1087–93. http://dx.doi.org/10.1007/s11432-011-4232-9.

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11

Razzak, Towhidur, Siddharth Rajan, and Andrew Armstrong. "Ultra-Wide Bandgap AlxGa1-xN Channel Transistors." International Journal of High Speed Electronics and Systems 28, no. 01n02 (2019): 1940009. http://dx.doi.org/10.1142/s0129156419400093.

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High Al-composition AlxGa1-xN, an emerging class of materials, is gaining significant traction due to its high critical breakdown electric field exceeding that of GaN and high electron saturation velocity that is comparable to GaN. High Al-composition AlxGa1-xN holds promise for applications such as highly scaled next generation RF devices and power devices. However, significant strides remain to be made before AlxGa1-xN can take a share of the limelight. Encouraging progress has been made in recent years, including multiple reports of RF operation of AlxGa1-xN channel transistors with reporte

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12

Bar-Cohen, Avram, Joseph J. Maurer, and Abirami Sivananthan. "Near-Junction Microfluidic Cooling for Wide Bandgap Devices." MRS Advances 1, no. 2 (2016): 181–95. http://dx.doi.org/10.1557/adv.2016.120.

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ABSTRACTGaN has emerged as the material of choice for advanced power amplifier devices for both industrial and defense applications but near-junction thermal barriers severely limit the inherent capability of high-quality GaN materials. Recent “embedded cooling” efforts, funded by Defense Advanced Research Projects Agency Microsystems Technology Office (DARPA-MTO), have focused on reduction of this near-junction thermal resistance, through the use of diamond substrates and efficient removal of the dissipated power with convective and evaporative microfluidics. An overview of the accomplishment

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13

Kaplar, R. J., A. A. Allerman, A. M. Armstrong, et al. "Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices." ECS Journal of Solid State Science and Technology 6, no. 2 (2016): Q3061—Q3066. http://dx.doi.org/10.1149/2.0111702jss.

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14

Ramelan, A. H., S. Wahyuningsih, H. Munawaroh, and R. Narayan. "ZnO wide bandgap semiconductors preparation for optoelectronic devices." IOP Conference Series: Materials Science and Engineering 176 (February 2017): 012008. http://dx.doi.org/10.1088/1757-899x/176/1/012008.

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15

Sheng, K., and Q. Guo. "Recent Advances in Wide Bandgap Power Switching Devices." ECS Transactions 50, no. 3 (2013): 179–88. http://dx.doi.org/10.1149/05003.0179ecst.

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16

Millan, Jose, Philippe Godignon, Xavier Perpina, Amador Perez-Tomas, and Jose Rebollo. "A Survey of Wide Bandgap Power Semiconductor Devices." IEEE Transactions on Power Electronics 29, no. 5 (2014): 2155–63. http://dx.doi.org/10.1109/tpel.2013.2268900.

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17

OZPINECI, BURAK, MADHU SUDHAN CHINTHAVALI, and LEON M. TOLBERT. "ENHANCING POWER ELECTRONIC DEVICES WITH WIDE BANDGAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 16, no. 02 (2006): 545–56. http://dx.doi.org/10.1142/s0129156406003837.

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Silicon carbide ( SiC ) unipolar devices have much higher breakdown voltages than silicon ( Si ) unipolar devices because of the ten times greater electric field strength of SiC compared with Si . 4H - SiC unipolar devices have higher switching speeds due to the higher bulk mobility of 4H - SiC compared to other polytypes. In this paper, four commercially available SiC Schottky diodes with different voltage and current ratings, VJFET, and MOSFET samples have been tested to characterize their performance at different temperatures ranging from -50°C to 175°C. Their forward characteristics and sw

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18

Liyanage, Geethika K., Adam B. Phillips, Fadhil K. Alfadhili, and Michael J. Heben. "Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices." MRS Advances 3, no. 52 (2018): 3121–28. http://dx.doi.org/10.1557/adv.2018.501.

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AbstractWide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of ho

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19

Kim, Dong-Sik, Dong-Myoung Joo, Byoung-Kuk Lee, and Jong-Soo Kim. "Design and Implementation of an Optimal Hardware for a Stable Operating of Wide Bandgap Devices." Transactions of The Korean Institute of Electrical Engineers 65, no. 1 (2016): 88–96. http://dx.doi.org/10.5370/kiee.2016.65.1.88.

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20

Alexandrov, Petre, Anup Bhalla, Zhong Da Li, Xue Qing Li, John Bendel, and Jonathan Dodge. "650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches." Materials Science Forum 897 (May 2017): 673–76. http://dx.doi.org/10.4028/www.scientific.net/msf.897.673.

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We present a SiC Trench JFET technology that achieves a record setting specific on-resistance (RDSA) of 0.75mohm.cm2. These SiC devices are combined with optimized low voltage MOSFETs to form co-packaged cascode transistors, which provide unprecedented performance benefits, with a clear path to direct cost parity with silicon superjunction devices. These devices are shown to be useful for all circuit topologies..

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21

Saadeh, Osama, Ahmad Al-Hmoud, and Zakariya Dalala. "Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing." Electronics 9, no. 5 (2020): 703. http://dx.doi.org/10.3390/electronics9050703.

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The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and increase efficiency. Due to the complexity of modern circuits and systems, any circuit’s design should start with proper simulation and device selection, to reduce overall cost and time of prototyping, both of which require accurate and thorough device characterization. Wide bandgap (WBG) power semiconductor devices offer superior characteristics ove

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22

Ericsen, T. "Future navy application of wide bandgap power semiconductor devices." Proceedings of the IEEE 90, no. 6 (2002): 1077–82. http://dx.doi.org/10.1109/jproc.2002.1021572.

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23

Nurmikko, Arto V. "Excitons, microcavity physics and devices in wide bandgap semiconductors." Journal of Crystal Growth 214-215 (June 2000): 993–1001. http://dx.doi.org/10.1016/s0022-0248(00)00237-2.

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24

Lutz, Josef, and Jörg Franke. "Reliability and reliability investigation of wide-bandgap power devices." Microelectronics Reliability 88-90 (September 2018): 550–56. http://dx.doi.org/10.1016/j.microrel.2018.07.001.

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25

Burk, A. A., M. J. O'Loughlin, R. R. Siergiej, et al. "SiC and GaN wide bandgap semiconductor materials and devices." Solid-State Electronics 43, no. 8 (1999): 1459–64. http://dx.doi.org/10.1016/s0038-1101(99)00089-1.

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26

Mantooth, Homer Alan, Kang Peng, Enrico Santi, and Jerry L. Hudgins. "Modeling of Wide Bandgap Power Semiconductor Devices—Part I." IEEE Transactions on Electron Devices 62, no. 2 (2015): 423–33. http://dx.doi.org/10.1109/ted.2014.2368274.

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27

Santi, Enrico, Kang Peng, Homer Alan Mantooth, and Jerry L. Hudgins. "Modeling of Wide-Bandgap Power Semiconductor Devices—Part II." IEEE Transactions on Electron Devices 62, no. 2 (2015): 434–42. http://dx.doi.org/10.1109/ted.2014.2373373.

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28

Hudgins, J. L., G. S. Simin, E. Santi, and M. A. Khan. "An assessment of wide bandgap semiconductors for power devices." IEEE Transactions on Power Electronics 18, no. 3 (2003): 907–14. http://dx.doi.org/10.1109/tpel.2003.810840.

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29

Neumark, G. F. "Wide bandgap light-emitting devices materials and doping problems." Materials Letters 30, no. 2-3 (1997): 131–35. http://dx.doi.org/10.1016/s0167-577x(96)00194-2.

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30

Lucia, Oscar, Xu She, and Alex Q. Huang. "Wide Bandgap Devices and Power Conversion Systems—Part I." IEEE Transactions on Industrial Electronics 64, no. 10 (2017): 8190–92. http://dx.doi.org/10.1109/tie.2017.2738718.

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31

Lucia, Oscar, X. SHE, and A. Q. HUANG. "Wide Bandgap Devices and Power Conversion Systems—Part II." IEEE Transactions on Industrial Electronics 64, no. 11 (2017): 8959–61. http://dx.doi.org/10.1109/tie.2017.2744398.

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32

Kemerley, R. T., H. B. Wallace, and M. N. Yoder. "Impact of wide bandgap microwave devices on DoD systems." Proceedings of the IEEE 90, no. 6 (2002): 1059–64. http://dx.doi.org/10.1109/jproc.2002.1021570.

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33

Weitzel, C. E., and K. E. Moore. "Performance comparison of wide bandgap semiconductor rf power devices." Journal of Electronic Materials 27, no. 4 (1998): 365–69. http://dx.doi.org/10.1007/s11664-998-0416-5.

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34

Khramtsov, Igor A., and Dmitry Yu Fedyanin. "Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors." Materials 12, no. 12 (2019): 1972. http://dx.doi.org/10.3390/ma12121972.

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Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance solid-state lighting by delivering novel light sources. However, electrical pumping of these devices is still a challenging problem. Many wide-bandgap semiconductor materials, such as SiC, GaN, AlN, ZnS, and Ga2O3, can be easily n-type doped, but their efficient p-type doping is extremely difficult. The lack of holes due to the high activation energy of accept

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35

Carlson, Eric P., Daniel W. Cunningham, Yan Zhi Xu, and Isik C. Kizilyalli. "Power Electronic Devices and Systems Based on Bulk GaN Substrates." Materials Science Forum 924 (June 2018): 799–804. http://dx.doi.org/10.4028/www.scientific.net/msf.924.799.

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Wide-bandgap power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon-based semiconductors are fast approaching their performance limits for high power requirements, wide-bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages wide-bandgap semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature o

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36

Kim, Jihyun, Stephen J. Pearton, Chaker Fares, et al. "Radiation damage effects in Ga2O3 materials and devices." Journal of Materials Chemistry C 7, no. 1 (2019): 10–24. http://dx.doi.org/10.1039/c8tc04193h.

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37

Ahn, Byung Tae, Liudmila Larina, Ki Hwan Kim, and Soong Ji Ahn. "Development of new buffer layers for Cu(In,Ga)Se2 solar cells." Pure and Applied Chemistry 80, no. 10 (2008): 2091–102. http://dx.doi.org/10.1351/pac200880102091.

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Recent progress in the field of Cu(In,Ga)Se2 (CIGS) thin film solar cell technology is briefly reviewed. New wide-bandgap Inx(OOH,S)y and ZnSx(OH)yOz buffers for CIGS solar cells have been developed. Advances have been made in the film deposition by the growth process optimization that allows the control of film properties at the micro- and nanolevels. To improve the CIGS cell junction characteristics, we have provided the integration of the developed Cd-free films with a very thin CdS film. Transmittances of the developed buffers were greatly increased compared to the standard CdS. Inx(OOH,S)

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38

Wang, Xiang Guo, and Masayuki Yamamoto. "A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode." Materials Science Forum 963 (July 2019): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.963.823.

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The Super Cascode is a series connected structure with a normally-off low voltage Si-MOSFET and multiple normally-on wide bandgap semiconductors. It has low switching losses compared with silicon based bipolar devices, and low on-resistance and low cost compared with other single high voltage normally-off wide bandgap semiconductor devices. In practice, however, there are inevitable parasitic inductances, which result in the increase of switching losses. The method is proposed to eliminate the common-source inductances (CSIs), such as using stack-die configuration with each device and adding a

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39

Bindra, Ashok. "Joint Electronic Device Engineering Council JC-70 for Wide-Bandgap Devices [Society News]." IEEE Power Electronics Magazine 4, no. 4 (2017): 77. http://dx.doi.org/10.1109/mpel.2017.2762429.

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40

TERASHIMA, Tomohide. "Improvement and Problems of Power Devices Using Wide-Bandgap Semiconductors." Journal of the Society of Materials Science, Japan 64, no. 9 (2015): 701–6. http://dx.doi.org/10.2472/jsms.64.701.

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41

Gunshor, Robert L., and Arto V. Nurmikko. "Wide bandgap semiconductors and their application to light emitting devices." Current Opinion in Solid State and Materials Science 1, no. 1 (1996): 4–10. http://dx.doi.org/10.1016/s1359-0286(96)80002-7.

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42

Montag, Benjamin W., Neil Platt, Neil M. Boag, Jennifer I. Brand, and Kyle A. Nelson. "Doped Wide Bandgap Materials and Devices from Semiconducting Boron Carbide." ECS Transactions 3, no. 5 (2019): 429–35. http://dx.doi.org/10.1149/1.2357234.

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43

Bindra, Ashok. "Wide-Bandgap-Based Power Devices: Reshaping the power electronics landscape." IEEE Power Electronics Magazine 2, no. 1 (2015): 42–47. http://dx.doi.org/10.1109/mpel.2014.2382195.

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44

SUDA, Jun, Hiroki MIYAKE, and Tsunenobu KIMOTO. "Wide-bandgap Semiconductor Devices using Group-III Nitride/SiC Heterointerface." Hyomen Kagaku 31, no. 12 (2010): 651–56. http://dx.doi.org/10.1380/jsssj.31.651.

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45

Morya, Ajay Kumar, Matthew C. Gardner, Bahareh Anvari, et al. "Wide Bandgap Devices in AC Electric Drives: Opportunities and Challenges." IEEE Transactions on Transportation Electrification 5, no. 1 (2019): 3–20. http://dx.doi.org/10.1109/tte.2019.2892807.

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46

Park, S. H., C. Zhang, G. Yuan, D. Chen, and J. Han. "(Invited) Applications of Electrochemistry for Novel Wide Bandgap GaN Devices." ECS Transactions 66, no. 1 (2015): 143–49. http://dx.doi.org/10.1149/06601.0143ecst.

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47

Chen, Jian, Xiong Du, Quanming Luo, Xinyue Zhang, Pengju Sun, and Lin Zhou. "A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices." IEEE Transactions on Power Electronics 35, no. 12 (2020): 13182–99. http://dx.doi.org/10.1109/tpel.2020.2995778.

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48

Dutta, Atanu, and Simon S. Ang. "Design of a Low Inductance Power Module Based on Low Temperature Co-fired Ceramic." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, CICMT (2016): 000032–38. http://dx.doi.org/10.4071/2016cicmt-tp2a1.

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Abstract Efficient, compact, and reliable power electronic modules are building blocks of modern day power electronic systems. In recent times, wide bandgap semiconductor devices, such as, silicon carbide (SiC) and gallium nitride (GaN), are widely investigated and used in the power electronic modules to realize power dense, highly efficient, and fast switching modules for various applications. For high power applications is it required to parallel and series several devices to achieve high current and high voltage specifications, which results in larger current conducting traces. One of the m

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49

Nakajima, Akira, Mitsuaki Shimizu, and Hiromichi Ohashi. "Power Loss Limit in Unipolar Switching Devices: Comparison Between Si Superjunction Devices and Wide-Bandgap Devices." IEEE Transactions on Electron Devices 56, no. 11 (2009): 2652–56. http://dx.doi.org/10.1109/ted.2009.2031020.

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50

Zhang, Jing. "Novel Thermal-Electrical-Mechanical Model for Simulating Coupled Phenomena in High-Frequency Electronic Devices." Key Engineering Materials 538 (January 2013): 173–76. http://dx.doi.org/10.4028/www.scientific.net/kem.538.173.

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We present a fully coupled thermal-electrical-mechanical finite element based model to study material degradation behaviors of high-frequency electronic devices. The mechanisms of degradation and ultimately failure in wide bandgap (WBG) devices are very complex. Under operating conditions, the devices are usually subject to high electric fields, high stress/strain fields, high current densities, high temperatures and high thermal gradients. Moreover, these phenomena are coupled together. The presented finite element model is capable of computing stress, temperature, and electric fields based o

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