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Dissertations / Theses on the topic 'Wide gap semiconductor'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Buzzo, Marco. "Dopant imaging and profiling of wide bandgap semiconductor devices /." Konstanz : Hartung-Gorre, 2007. http://www.loc.gov/catdir/toc/fy0715/2007427206.html.

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2

Farahmand, Maziar. "Advanced simulation of wide band gap semiconductor devices." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/14777.

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3

Schwarz, Casey Minna. "Radiation Effects on Wide Band Gap Semiconductor Transport Properties." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5488.

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In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minori

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4

Fay, Michael W. "Advanced electron microscopy of wide band-gap semiconductor materials." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340213.

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5

Martin, Aude. "Nonlinear Photonic Nanostructures based on Wide Gap Semiconductor Compounds." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS526/document.

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La consommation d’énergie liée aux technologies de l’information augmente trèsrapidement et dans la mesure où la société a besoin d’être toujours plus connectée tout ens’appuyant sur des solutions durables, les technologies actuelles ne suffisent plus. La photoniqueintégrée s’impose dès lors comme une alternative à l’électronique pour réaliser du traitementdu signal économe en énergie. Au cours de cette thèse, j’ai étudié des structures sub-longueurd’onde en semiconducteur, les cristaux photoniques, qui présentent des propriétés non linéairesimpressionnantes. Plus précisément, le confinement f

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6

Bellotti, E. (Enrico). "Advanced modeling of wide band gap semiconductor materials and devices." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/15354.

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7

Orange, Catherine Louise. "Spin-flip Raman scattering of wide band gap semiconductor heterostructures." Thesis, University of East Anglia, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.267773.

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8

Sodipe, Olukayode O. "Wide-band Gap Devices for DC Breaker Applications." DigitalCommons@CalPoly, 2016. https://digitalcommons.calpoly.edu/theses/1529.

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With the increasing interest in wide-band gap devices, their potential benefits in power applications have been studied and explored with numerous studies conducted for both SiC and GaN devices. This thesis investigates the use of wide-band gap devices as the switching element in a semiconductor DC breaker. It involves the design of an efficient semiconductor DC breaker, its simulation in SPICE, construction of a hardware prototype and the comparative study of SiC and Si versions of the aforementioned breaker. The results obtained from the experiments conducted in the process of concluding thi

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9

Lajn, Alexander. "Transparent rectifying contacts on wide-band gap oxide semiconductors." Doctoral thesis, Universitätsbibliothek Leipzig, 2013. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-102799.

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Die vorliegenden Arbeit befasst sich mit der Herstellung und Charakterisierung von transparenten Metall-Halbleiter- Feldeffekttransistoren. Dazu werden im ersten Kapitel transparente gleichrichtende Kontakte, basierend auf dem Konzept von Metalloxidkontakten, hergestellt und im Hinblick auf chemische Zusammensetzung des Kontaktmaterials, Barriereninhomogenität und Kompatibilität mit amorphen Halbleitern untersucht. Außerdem wird die Anwendbarkeit der Kontakte als UV-Sensor studiert. Im zweiten Kapitel werden transparente leitfähige Oxide vorgestellt und insbesondere deren optische und

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10

Mayrock, Oliver. "Localization, disorder, and polarization fields in wide-gap semiconductor quantum wells." Doctoral thesis, [S.l. : s.n.], 2001. http://deposit.ddb.de/cgi-bin/dokserv?idn=96140437X.

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11

Garner, D. M. "Silicon heterojunction bipolar transistors with wide band-gap amorphous semiconductor emitters." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.599324.

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Firstly, the motivation behind the silicon HBT is discussed, followed by an investigation of tetrahedral amorphous carbon (ta-C) as a possible heteroemitter material. Silicon HBTs with n-type ta-C as a heteroemitter in npn transistors were studied first. Transistor action occurred, but the current gain was only 10<SUP>-6</SUP>. This was found to be due to the low electron affinity of ta-C creating a barrier to electron injection into the base, opposite to how an HBT should behave. The low electron affinity of ta-C motivated the fabrication of pnp transistors with p-type ta-C as the heteroemitt

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12

Ni, Ze. "Wide Band-Gap Semiconductor Based Power Converter Reliability and Topology Investigation." Diss., North Dakota State University, 2020. https://hdl.handle.net/10365/31935.

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Wide band-gap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have been widely investigated these years for their preferred operation at higher switching frequency, higher blocking voltage, higher temperature, with a compacter volume, in comparison with the traditional silicon (Si) devices. SiC MOSFETs have been utilized in photovoltaic systems, wind turbine converters, electric vehicles, solid-state transformers, more electric ships, and airplanes. GaN based transistors have also been adopted in the DC-to-DC converters in data centers, personal computers, AC-to

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13

Brown, Graeme. "Time-resolved ultrafast spectroscopy of wide-gap II-VI semiconductor quantum wells." Thesis, Heriot-Watt University, 2001. http://hdl.handle.net/10399/502.

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14

Ouyang, Qiqing Christine. "Physical model enhancement and exploration of bandgap engineering in novel sub-100nm pMOSFETs /." Digital version:, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p9992880.

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15

Vandersand, James Dennis. "Growth of 6H-SiC homoepitaxy on substrates off-cut between the [01-10] planes." Master's thesis, Mississippi State : Mississippi State University, 2002. http://library.msstate.edu/etd/show.asp?etd=etd-11072002-095154.

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16

Barnett, Anna Megan. "Wide band gap compound semiconductor detectors for x-ray spectroscopy in harsh environments." Thesis, University of Leicester, 2012. http://hdl.handle.net/2381/10375.

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Novel photon counting Alo.8Gao.2As, GaAs and SiC X-ray photodiodes were investigated through experiments and Monte Carlo computer simulations for their suitability as spectroscopic soft (:S 25 keY) X-ray detectors in high temperature (up to 90 QC) environments. Photon counting Alo.8Gao.2As and GaAs non-avalanche p+-i-n+ mesa X-ray photodiodes were shown to operate at temperatures as high as 90 QC. The temperature dependences of their spectral resolutions (FWHM at 5.9 keY) are reported. Analyses of the noise sources contributing to the devices' measured performances are presented which suggest

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17

Klar, Peter Jens. "Magneto-optical studies of wide-gap dilute magnetic semiconductor heterostructures and quantum dots." Thesis, University of East Anglia, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338223.

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18

Zhang, Zhichun. "Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides." The Ohio State University, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=osu1366107518.

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19

Piquette, Eric C. McGill T. C. "Molecular beam heteroepitaxial growth and characterization of wide band gap semiconductor films and devices /." Diss., Pasadena, Calif. : California Institute of Technology, 1999. http://resolver.caltech.edu/CaltechETD:etd-11292006-152956.

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20

Jadwisieńczak, Wojciech M. "The luminescence properties of the wide bandgap nitrides doped with rare earth ions and gallium nitride doped with conventional isoelectronic impurities." Ohio : Ohio University, 2001. http://www.ohiolink.edu/etd/view.cgi?ohiou1179158888.

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21

Johnson, Jared M. "Atomic Scale Characterization of Point Defects in the Ultra-Wide Band Gap Semiconductor β-Ga2O3". The Ohio State University, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1577916628182296.

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22

Bakarezos, Efthimios. "Ultrafast nonlinear optics of wide-gap II-VI quantum wells and polymeric materials." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/519.

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23

Yao, Chengcheng Yao. "Semiconductor Galvanic Isolation Based Onboard Vehicle Battery Chargers." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1513586255613963.

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24

Armstrong, Andrew M. "Investigation of deep level defects in GaN:C, GaN:Mg and pseudomorphic AlGaN/GaN films." Columbus, Ohio : Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1164038818.

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25

Flitcroft, Richard M. "Wide bandgap collector III-V double heterojunction bipolar transistors." Thesis, University of Sheffield, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341875.

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26

Hiramatsu, Hidenori, Kazushige Ueda, Hiromichi Ohta, et al. "Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass." American Institite of Physics, 2007. http://hdl.handle.net/2237/11981.

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27

Amor, Sarrah. "Étude des défauts dans les alliages de semi-conducteurs à grand gap B(AlGa)N et de leur rôle dans les propriétés de transport : application aux photo-détecteurs U." Thesis, Université de Lorraine, 2017. http://www.theses.fr/2017LORR0286/document.

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Le nitrure de gallium (GaN) et ses alliages ternaires et quaternaires suscitent de plus en plus d’intérêt dans les communautés scientifiques et industrielles pour leur potentiel d’utilisation dans des dispositifs électroniques haute fréquence, dans les transistors à forte mobilité électroniques, dans la photo-détection UV et les cellules solaires de nouvelles générations. L’aboutissement de ces nouveaux composants reste entravé à l’heure actuelle, entre autre, par la non maîtrise des techniques d’établissement de contacts électriques. C’est dans ce cadre général que s’inscrivent les travaux de

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28

Filsecker, Felipe. "Characterization and evaluation of a 6.5-kV silicon carbide bipolar diode module." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-217848.

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This work presents a 6.5-kV 1-kA SiC bipolar diode module for megawatt-range medium voltage converters. The study comprises a review of SiC devices and bipolar diodes, a description of the die and module technology, device characterization and modelling and benchmark of the device at converter level. The effects of current change rate, temperature variation, and different insulated-gate bipolar transistor (IGBT) modules for the switching cell, as well as parasitic oscillations are discussed. A comparison of the results with a commercial Si diode (6.5 kV and 1.2 kA) is included. The benchmark c

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29

Ovramenko, Tamara. "STM studies of single organic molecules on silicon carbide." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112315.

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L’interaction de molécules organiques avec les surfaces semiconductrices permet de contrôler les propriétés physiques de ces dernières et ce, soit à travers une modification locale en utilisant des molécules individuelles, soit par la passivation de la surface par une mono-couche complète. Aussi, le contrôle de l’interaction moléculaire nous permet de modifier les propriétés intrinsèques des molécules à travers un découplage électronique partiel ou complet entre les orbitales moléculaires et la surface. Pour atteindre ces objectifs, cette thèse présente l’étude expérimentale de l’adsorption de

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30

Maertens, Alban. "Etude de la réalisation d'une structure transistor (FET) pour l'observation de l'exciton du ZnO sous champ électrique." Thesis, CentraleSupélec, 2016. http://www.theses.fr/2016SUPL0009/document.

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Ce manuscrit porte sur la conception d’un transistor à effet de champ destiné à l’observation de la photoluminescence de l’exciton et des complexes excitoniques chargés du ZnO sous l’influence d’un champ électrique. Pour cela, des simulations ont permis de définir un cahier des charges de la structure du transistor afin de bloquer la conductivité dans le canal de ZnO et d’appliquer un champ électrique intense. La seconde partie concerne le choix du matériau de grille et de l’électrode transparente de surface pour l’observation de la photoluminescence dans le canal. L’oxyde de gallium (-Ga2O3)

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31

Chan, Yung. "Optical functions of wide band gap semiconductors /." View the Table of Contents & Abstract, 2004. http://sunzi.lib.hku.hk/hkuto/record/B32021264.

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32

Tirino, Louis. "Transport Properties of Wide Band Gap Semiconductors." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5210.

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Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semicla

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33

Cheekoori, Reddiprasad. "Electron transport in wide energy gap semiconductors." Thesis, University of British Columbia, 2012. http://hdl.handle.net/2429/40421.

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The dependence of the low-field electron drift mobility on the crystal temperature is determined for a number of wide energy gap semiconductors of interest. The materials considered include gallium nitride, aluminium nitride, indium nitride, and zinc oxide; while indium nitride is not a wide energy gap semiconductor in of itself, alloys of indium nitride with gallium nitride are. For the bulk results, it is found that indium nitride exhibits the highest low-field electron drift mobility while aluminium nitride exhibits the lowest low-field electron drift mobility. This is related to the sma

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34

Chan, Yung, and 陳勇. "Optical functions of wide band gap semiconductors." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B45015338.

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35

Saadatkia, Pooneh. "Optoelectronic Properties of Wide Band Gap Semiconductors." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562379152593304.

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36

Kusch, Gunnar. "Characterization of low conductivity wide band gap semiconductors." Thesis, University of Strathclyde, 2016. http://digitool.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=27392.

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This thesis covers research on low electric conductivity wide band gap semiconductors of the group-III nitride material system. The work presented focussed on using multi-mode scanning electron microscope (SEM) techniques to investigate the luminescence properties and their correlation with surface effects, doping concentration and structure of semiconductor structures. The measurement techniques combined cathodoluminescence (CL) for the characterization of luminescence properties, secondary electron (SE) imaging for imaging of the morphology and wavelength dispersive X-ray (WDX) spectroscopy

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37

Mickevičius, Jūras. "Carrier recombination in wide-band-gap nitride semiconductors." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2009. http://vddb.library.lt/obj/LT-eLABa-0001:E.02~2009~D_20091121_102304-00016.

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The thesis is dedicated to carrier recombination investigations in wide-band-gap semiconductors and their structures. The complex experimental studies were performed by combining several different techniques. Carrier dynamics in GaN epilayers were investigated under extremely low and high excitation conditions. A new method for interpreting photoluminescence decay kinetics was suggested by interrelating luminescence and light-induced grating decay transients. The new approach for studies of yellow band in GaN was shown by linking the carrier lifetime with yellow band intensity. Two AlGaN epila

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38

Bump, Buddy J. "Synthesis and Characterization of CdSe/ZnS Core/Shell Quantum Dot Sensitized PCPDTBT-P3HT:PCBM Organic Photovoltaics." DigitalCommons@CalPoly, 2014. https://digitalcommons.calpoly.edu/theses/1309.

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Durable, cheap, and lightweight polymer based solar cells are needed, if simply to meet the demand for decentralized electrical power production in traditionally “off-grid” areas. Using a blend of Poly(3-hexylthiophene-2,5-diyl) (P3HT), Phenyl-C61-butyric acid methyl ester (PCBM), and the low band-gap polymer Poly[2,6-(4,4-bis-(2- ethylhexyl)-4H-cyclopenta [2,1-b;3,4-b′]dithiophene)-alt-4,7(2,1,3-benzothiadiazole)] (PCPDTBT), we have fabricated devices with a wide spectral response and 3% power conversion efficiency in AM 1.5 conditions; however, this thin film system exhibits only 0.43 optica

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39

Zhang, Shaolin. "Wide band gap nanomaterials and their applications." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B41758225.

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40

Bolger, Jeremy Adam. "Picosecond nonlinear optical processes in wide-gap semiconductors andpolydiacetylene." Thesis, Heriot-Watt University, 1992. http://hdl.handle.net/10399/1500.

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41

Harrison, Daniel. "Impact ionisation rate calculations in wide band gap semiconductors." Thesis, Durham University, 1998. http://etheses.dur.ac.uk/4651/.

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Calculations of band-to-band impact ionisation rates performed in the semi-classical Fermi’s Golden Rule approximation are presented here for the semiconductors GaAs, In(_0.53)Ga(_0.47)As and Si(_0.5)Ge(_0.5) at 300K. The crystal band structure is calculated using the empirical pseudopotential method. To increase the speed with which band structure data at arbitrary k-vectors can be obtained, an interpolation scheme has been developed. Energies are quadratically interpolated on adapted meshes designed to ensure accuracy is uniform throughout the Brillouin zone, and pseudowavefunctions are quad

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42

Zhang, Shaolin, and 張少林. "Wide band gap nanomaterials and their applications." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B41758225.

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43

Chen, Xinyi, and 陈辛夷. "Wide band-gap nanostructure based devices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B49799290.

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Wide band gap based nanostructures have being attracting much research interest because of their promise for application in optoelectronic devices. Among those wide band gap semiconductors, gallium nitride (GaN) and zinc oxide (ZnO) are the most commonly studied and optoelectronic devices based on GaN and ZnO have been widely investigated. This thesis concentrates on the growth, optical and electrical properties of GaN and ZnO nanostructures, plus their application in solar cells and light emitting diodes (LEDs). GaN-nanowire based dye sensitized solar cells were studied. Different post-grow

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44

Perrier, Coralie. "Impact des défauts profonds sur les propriétés électriques de diodes Schottky en β-Ga2O3". Electronic Thesis or Diss., Université Grenoble Alpes, 2025. http://www.theses.fr/2025GRALY002.

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Avec l’accélération de la transition énergétique, le développement de l’électrification dans le monde et l’apparition de nouveaux usages, il devient nécessaire de modifier en profondeur la gestion du réseau électrique pour une meilleure flexibilité. Cela conduit à une introduction croissante des dispositifs d’électronique de puissance dans différentes parties du système électrique : production, transmission, consommation et stockage d’énergie. La domination du silicium sur le marché de l’électronique de puissance arrive aujourd’hui à sa limite au profit des matériaux à large bande interdite (S

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45

Blewett, Ian James. "Ultrafast nonlinear optical processes in wide-gap II-VI semiconductors." Thesis, Heriot-Watt University, 1996. http://hdl.handle.net/10399/754.

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46

Kahn, Kevin. "Two-dimensional wide band gap semiconductors for deep UV photonics." Thesis, Imperial College London, 2016. http://hdl.handle.net/10044/1/48013.

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Light emitters and detectors in the deep ultraviolet range (DUV) are of great current interest, with applications in water purification, solar-blind photodetectors and communication, biohazard detection, and phosphor-assisted white light emitters. However, DUV optoelectronics based on solid-state heterostructures suffer from low internal and external quantum efficiencies, due to issues relating to their fundamental material properties. These limitations motivate the exploration of new classes of materials for these applications. The recent emergence of two-dimensional (2D) materials has opened

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47

Hamad, Hassan. "Détermination des coefficients d'ionisation de matériaux à grand gap par génération multi-photonique." Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0017/document.

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L’utilisation des semi-conducteurs à large bande interdite (wide bandgap ou WBG) tels que le carbure de silicium SiC, le nitrure de gallium GaN, le diamant, etc… s’est répandue dans le domaine de l’électronique de puissance ces dernières décennies. Leurs caractéristiques électroniques et mécaniques font des WBGs des solutions alternatives pour remplacer le traditionnel silicium. Cependant, des études supplémentaires sont indispensables pour améliorer la tenue en tension, les pertes statiques et dynamiques et les performances en fonctionnement à haute température des composants WBGs. Dans ce ca

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48

Yellai, Kashyap Williams John R. "Post ion-implantation surface planarization process for 4H-SiC wafers using carbon encapsulation technique." Auburn, Ala., 2006. http://repo.lib.auburn.edu/2006%20Fall/Theses/YELLAI_KASHYAP_13.pdf.

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49

Robutel, Rémi. "Etude des composants passifs pour l'électronique de puissance à "haute température" : application au filtre CEM d'entrée." Phd thesis, INSA de Lyon, 2011. http://tel.archives-ouvertes.fr/tel-00665819.

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Les travaux présentés dans ce manuscrit sont dédiés à l'étude des composants passifs pour l'électronique de puissance à haute température. Des condensateurs et des matériaux magnétiques sont sélectionnés et caractérisés jusqu'à environ 250°C. Les caractéristiques électriques et électromagnétiques montrent, pour certains de ces composants et matériaux, des dépendances significatives en fonction de la température, mais également des non-linéarités et des phénomènes d'hystérésis. Les caractérisations sont ensuite exploitées pour la conception d'un filtre CEM d'entrée d'un onduleur de tension de 2

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50

Chen, Jian. "Calculation of linear and nonlinear optical susceptibilities in wide gap semiconductors /." The Ohio State University, 1996. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487941504293146.

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