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Journal articles on the topic 'Wide gap semiconductor'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Kato, Masashi. "Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials." Japanese Journal of Applied Physics 64, no. 6 (2025): 060101. https://doi.org/10.35848/1347-4065/adda80.

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Abstract Carrier recombination is important in the field of semiconductors because it contributes to the performance of bipolar devices and solar cells. However, as the semiconductor field expands from conventional materials to wide band gap semiconductors: SiC and related wide band gap semiconductor materials, concerns have emerged regarding the detailed analysis and accurate estimation of carrier recombination lifetime. Therefore, this review discusses bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials, both in theoretical and experimental vie

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2

Keßler, P., K. Lorenz, and R. Vianden. "Implanted Impurities in Wide Band Gap Semiconductors." Defect and Diffusion Forum 311 (March 2011): 167–79. http://dx.doi.org/10.4028/www.scientific.net/ddf.311.167.

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Wide band gap semiconductors, mainly GaN, have experienced much attention due to their application in photonic devices and high-power or high-temperature electronic devices. Especially the synthesis of InxGa1-xN alloys has been studied extensively because of their use in LEDs and laser diodes. Here, In is added during the growth process and devices are already very successful on a commercial scale. Indium in nitride ternary and quaternary alloys plays a special role; however, the mechanisms leading to more efficient light emission in In-containing nitrides are still under debate. Therefore, th

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3

Buniatyan, V. V., and V. M. Aroutiounian. "Wide gap semiconductor microwave devices." Journal of Physics D: Applied Physics 40, no. 20 (2007): 6355–85. http://dx.doi.org/10.1088/0022-3727/40/20/s18.

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4

Yasaki, Yoichi, Noriyuki Sonoyama, and Tadayoshi Sakata. "Semiconductor sensitization of colloidal In2S3 on wide gap semiconductors." Journal of Electroanalytical Chemistry 469, no. 2 (1999): 116–22. http://dx.doi.org/10.1016/s0022-0728(99)00184-9.

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5

TREW, R. J., and M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power ampl

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6

Millán, J. "Wide band-gap power semiconductor devices." IET Circuits, Devices & Systems 1, no. 5 (2007): 372. http://dx.doi.org/10.1049/iet-cds:20070005.

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7

Klimm, Detlef. "Electronic materials with a wide band gap: recent developments." IUCrJ 1, no. 5 (2014): 281–90. http://dx.doi.org/10.1107/s2052252514017229.

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The development of semiconductor electronics is reviewed briefly, beginning with the development of germanium devices (band gapEg= 0.66 eV) after World War II. A tendency towards alternative materials with wider band gaps quickly became apparent, starting with silicon (Eg= 1.12 eV). This improved the signal-to-noise ratio for classical electronic applications. Both semiconductors have a tetrahedral coordination, and by isoelectronic alternative replacement of Ge or Si with carbon or various anions and cations, other semiconductors with widerEgwere obtained. These are transparent to visible lig

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8

Yasaki, Yoichi, Noriyuki Sonoyama, and Tadayoshi Sakata. "ChemInform Abstract: Semiconductor Sensitization of Colloidal In2S3 on Wide Gap Semiconductors." ChemInform 30, no. 44 (2010): no. http://dx.doi.org/10.1002/chin.199944013.

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9

Petoral, R. M., G. R. Yazdi, A. Lloyd Spetz, R. Yakimova, and K. Uvdal. "Organosilane-functionalized wide band gap semiconductor surfaces." Applied Physics Letters 90, no. 22 (2007): 223904. http://dx.doi.org/10.1063/1.2745641.

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10

Suski, T., P. Perlin, A. Pietraszko, et al. "(GaMg)N — New Wide Band Gap Semiconductor." physica status solidi (a) 176, no. 1 (1999): 343–46. http://dx.doi.org/10.1002/(sici)1521-396x(199911)176:1<343::aid-pssa343>3.0.co;2-u.

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11

Lu, Shengbo. "A systematic analysis of wide band gap semiconductor used in power electronics." Applied and Computational Engineering 65, no. 1 (2024): 161–66. http://dx.doi.org/10.54254/2755-2721/65/20240487.

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In recent years, the field of power electronics has witnessed a significant shift towards the adoption of wide bandgap (WBG) materials, marking a pivotal change in the design and efficiency of electronic devices. This paper presents a comprehensive systematic analysis of wide bandgap materials and their semiconductor applications in power electronics. Initially, the paper provides essential background information, elucidating the emerging importance of WBG materials in modern electronics. It then delves into various types of wide bandgap semiconductors, examining their fundamental operating pr

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12

Tang, Minghao. "Characteristics, application and development trend of the third-generation semiconductor." Applied and Computational Engineering 7, no. 1 (2023): 41–46. http://dx.doi.org/10.54254/2755-2721/7/20230337.

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Various devices made of the third-generation semiconductor have been gradually applied to various fields with the rapid development of the third-generation semiconductor materials equipment, manufacturing technology, and device physics represented by SiC and GaN. Firstly, the characteristics of the third-generation semiconductors is analyzed in this paper. Compared with the first-generation and second-generation semiconductors, the third-generation semiconductor has a wider band gap width, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate and more ex

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13

Liang, Xin Xiang, Zhi Qun Cheng, and Min Shi Jia. "Ballistic Effect and Application in Circuit Design of Wide Band-Gap Semiconductor." Applied Mechanics and Materials 644-650 (September 2014): 3597–600. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3597.

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With manufacturing technology innovation and progress of electronic devices of semiconductors, dimensions of electronic devices get smaller nowadays. There has been processing of 90nm and 20nm in production. With in-depth research, scientists are more and more interested in molecular devices. Since the size of molecular devices is small, electrons transfer by ballistic transport. In semiconductor devices, when the transport distance is at micrometer or smaller sizes, the ballistic transport phenomena of electrons and holes of carriers occur. This transfer form is not affected by lattice defect

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14

Funaki, Tsuyoshi, Kazuya Kodama, Hitoshi Umezawa, and Shinichi Shikata. "Characterization of Fast Switching Capability for Diamond Schottky Barrier Diode." Materials Science Forum 679-680 (March 2011): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.820.

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Wide band gap semiconductors have been attracted as the material for fabricating power switching devices to obtain lower power conversion loss in high voltage circuit, and to operate harsh environment of high temperature. This paper focuses on diamond as the wide band gap semiconductor material and elucidates the dynamic characteristics in switching operation. To this end, Schottky barrier diode (SBD) is fabricated with p type diamond semiconductor and static I-V characteristics is evaluated. Then, the switching operation of diamond SBD is demonstrated, and forward current dependency of the re

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15

Mufti, Hareem, Fatima Manzoor, Nisar Ahmad, Surraya Mukhtar, Mujahid Niaz Akhtar, and Ghauri Sabir. "Structural, Electronic, Magnetic and Optical properties of Sm doped ZnS: A First Principle Study." Journal of Materials and Physical Sciences 4, no. 2 (2023): 73–83. http://dx.doi.org/10.52131/jmps.2023.0402.0037.

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Wide band gap semiconductors have many applications in photo luminescence devices and optoelectronic devices. We have investigated the structural, magnetic and optical properties of pure ZnS and Sm doped ZnS using density functional theory and implemented first principle linearized augmented plane wave (LAPW) method. For exchange correlation potential energy, generalized gradient approximation (GGA), GGA+U (where U is Hubbard potential) and Trans and Blaha modiefied Becke-Johnson (TB-mBJ) approximations are used. ZnS is a wide band gap semiconductor material having experimental band gap ~ 3.54

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16

Agarwal, Anant, Woong Je Sung, Laura Marlino, et al. "Wide Band Gap Semiconductor Technology for Energy Efficiency." Materials Science Forum 858 (May 2016): 797–802. http://dx.doi.org/10.4028/www.scientific.net/msf.858.797.

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The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain industry acceptance. However, hurdles still exist in achieving widespread market acceptance, on a par with traditional silicon power devices. Primary challenges include reducing device costs and the expansion of a workforce trained in their use. The Department of Energy (DOE) is actively fostering development activities to expand application spaces, achieve acceptable cost reduction targets and grow the acceptance of WBG devices to realiz

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17

Millán, José, Philippe Godignon, and Amador Pérez-Tomás. "Wide Band Gap Semiconductor Devices for Power Electronics." Automatika 53, no. 2 (2012): 107–16. http://dx.doi.org/10.7305/automatika.53-2.177.

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18

SUGANUMA, Katsuaki. "Die-Attach Technology for Wide Band Gap Semiconductor." Journal of The Surface Finishing Society of Japan 69, no. 3 (2018): 94–101. http://dx.doi.org/10.4139/sfj.69.94.

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19

Hwang, C. S., and E. S. Nam. "(Plenary) Wide Band Gap Semiconductor Transistors for FPD." ECS Transactions 67, no. 1 (2015): 159–65. http://dx.doi.org/10.1149/06701.0159ecst.

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20

SHIOMI, Shoma, Kei ARIMA, Miho KAWAI, et al. "Optical Properties of Wide Band-Gap Semiconductor ZnMgSTe." Journal of the Society of Materials Science, Japan 73, no. 10 (2024): 774–77. http://dx.doi.org/10.2472/jsms.73.774.

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21

Han, Fei, Di Wang, Christos D. Malliakas, et al. "(CaO)(FeSe): A Layered Wide-Gap Oxychalcogenide Semiconductor." Chemistry of Materials 27, no. 16 (2015): 5695–701. http://dx.doi.org/10.1021/acs.chemmater.5b02164.

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22

Lu, Meihua, H. Gong, T. Song, Jian-Ping Wang, Hong-Wei Zhang, and T. J. Zhou. "Nanoparticle composites: FePt with wide-band-gap semiconductor." Journal of Magnetism and Magnetic Materials 303, no. 2 (2006): 323–28. http://dx.doi.org/10.1016/j.jmmm.2006.01.246.

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23

Lischka, K., A. Waag, H. Mariette, and J. Neugebauer. "Wide band gap semiconductor nanostructures for optoelectronic applications." Microelectronics Journal 40, no. 2 (2009): 203. http://dx.doi.org/10.1016/j.mejo.2008.07.009.

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24

Delage, S. L., and C. Dua. "Wide band gap semiconductor reliability : Status and trends." Microelectronics Reliability 43, no. 9-11 (2003): 1705–12. http://dx.doi.org/10.1016/s0026-2714(03)00338-x.

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25

Oshima, Takayoshi. "Optical applications of wide-band-gap gallium oxide." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C1411. http://dx.doi.org/10.1107/s205327331408588x.

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Ga2O3 have been attracting much attention as a wide-band-gap semiconductor owing to a large band-gap of 4.8 eV and the availability of high-quality and large-sized single crystals, which are advantageous over conventional wide-band-gap semiconductors. This presentation focuses on optical applications using Ga2O3 single crystals: photodetectors and photoelectrodes, both of which show interesting and promising properties[1,2]. As for photodetectors, a PEDOT-PSS Schottky and In ohmic contacts were prepared on front and back surfaces of a n-type Ga2O3 single crystal plate, respectively, to fabrica

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26

Averin, S. V., P. I. Kuznetsov, V. A. Zhitov, et al. "Metal-semiconductor-metal photodiodes based on ZnCdS/GaP wide-gap heterostructures." Technical Physics 57, no. 11 (2012): 1514–18. http://dx.doi.org/10.1134/s1063784212110047.

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27

MUÑOZ, ELIAS. "SEMICONDUCTOR UV SOURCES AND DETECTORS: SOME NON-CONSUMER APPLICATIONS." International Journal of High Speed Electronics and Systems 12, no. 02 (2002): 421–28. http://dx.doi.org/10.1142/s0129156402001344.

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UV emitters and photodetectors based on wide band-gap semiconductors are being investigated and may soon become commercially available. Solid state lighting and information storage are two main applications in the consumer area for these new semiconductor devices. Presently, III-nitrides seem to be the most promising materials for such near UV semiconductor devices. In this work some non-consumer applications are indicated. Biophotonics appears to be a very promising area for such devices.

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28

FUJITA, Shizuo. "Evolution of Wide Band Gap Semiconductor Light Emitting Devices." TRENDS IN THE SCIENCES 20, no. 2 (2015): 2_25–2_28. http://dx.doi.org/10.5363/tits.20.2_25.

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29

Martin, Aude, Sylvain Combrié, and Alfredo De Rossi. "Photonic crystal waveguides based on wide-gap semiconductor alloys." Journal of Optics 19, no. 3 (2017): 033002. http://dx.doi.org/10.1088/2040-8986/aa5498.

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30

Chen, L. C., C. K. Chen, S. L. Wei, et al. "Crystalline silicon carbon nitride: A wide band gap semiconductor." Applied Physics Letters 72, no. 19 (1998): 2463–65. http://dx.doi.org/10.1063/1.121383.

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31

AHLAWAT, DHARAMVIR SINGH. "LASER ENHANCED MOBILITY IN WIDE BAND GAP SEMICONDUCTOR CRYSTALS." Modern Physics Letters B 26, no. 29 (2012): 1250194. http://dx.doi.org/10.1142/s0217984912501941.

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Laser enhanced mobility in the case of PbI 2 single crystal has been investigated on the basis of the experimental results of photoconductivity measurements using high power Nd : YAG laser. Its dependence on energy area density/photon density and charge carrier concentration has been studied. The obtained results of PbI 2 have been compared with that of CdI 2 and ZnS crystals studied under similar experimental conditions. The laser enhanced mobility has also been compared with the theoretical study in the case of GaAs crystal using CO 2 laser.

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32

Shur, Michael. "Wide band gap semiconductor technology: State-of-the-art." Solid-State Electronics 155 (May 2019): 65–75. http://dx.doi.org/10.1016/j.sse.2019.03.020.

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33

Hiramatsu, Hidenori, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, and Hideo Hosono. "Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe." Thin Solid Films 445, no. 2 (2003): 304–8. http://dx.doi.org/10.1016/s0040-6090(03)01173-8.

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34

Kardashev, B. K. "Amplitude dependent damping in HgI2 wide band gap semiconductor." Journal of Alloys and Compounds 310, no. 1-2 (2000): 153–59. http://dx.doi.org/10.1016/s0925-8388(00)00937-3.

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35

Matsuoka, T., N. Yoshimoto, T. Sasaki, and A. Katsui. "Wide-gap semiconductor InGaN and InGaAln grown by MOVPE." Journal of Electronic Materials 21, no. 2 (1992): 157–63. http://dx.doi.org/10.1007/bf02655831.

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36

Kasherininov, P. G., A. N. Lodygin, S. S. Martynov, and V. S. Khrunov. "Nonpolarizing radiation detectors based on wide-gap semiconductor crystals." Semiconductors 33, no. 12 (1999): 1328–30. http://dx.doi.org/10.1134/1.1187919.

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37

Zaletin, V. M. "Development of semiconductor detectors based on wide-gap materials." Atomic Energy 97, no. 5 (2004): 773–80. http://dx.doi.org/10.1007/s10512-005-0061-5.

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38

Pécz, B. "Transmission electron microscopy of wide band-gap semiconductor layers." physica status solidi (a) 195, no. 1 (2003): 214–21. http://dx.doi.org/10.1002/pssa.200306292.

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39

Li, Jiawei. "Recent Progress of β-Ga2O3 and Transition Metal doped β- Ga2O3 Structure and Properties". Highlights in Science, Engineering and Technology 99 (18 червня 2024): 247–52. http://dx.doi.org/10.54097/er1nze77.

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Oxide semiconductor material formed from oxygen and a metal is a compound semiconductor material. Important oxide semiconductor materials include Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, Ga2O3 and others. Oxide semiconductors have been receiving strong attention and are widely used in different fields such as solar cells and photovoltaic technology. Due to the development of technology, the high-performance techniques demand more from the parts. Semiconductor is an intensively researched substance that can be used in a wide range of technologies. β-Ga2O3 is a metal oxide that has good pro

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40

Suresha, Kasala. "Temperature and Electron concentration dependent Thermoelectric Power in Wide Band Gap semiconductor GaN Nanowire." International Journal for Research in Applied Science and Engineering Technology 10, no. 4 (2022): 1409–12. http://dx.doi.org/10.22214/ijraset.2022.41540.

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Abstract: Nanostructures have a significant promise as potential building blocks for the next generation thermoelectric devices. While the thermal transport properties of bulk materials have been intensely studied, the understanding of nanostructure thermoelectric properties and their interrelation is still incomplete. In the calculated temperature range, the thermoelectric power (TEP) was found to be linearly dependent on temperature, suggesting the degenerate nature of the GaN semiconductor nanowire similar to that of ZnO semiconductor nanowire. Observed negative values of TEP indicating tha

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41

Daliev, Kh S., M. K. Onarkulov, and S. M. Otajonov. "DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS." SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS 3, no. 1 (2021): 31–35. http://dx.doi.org/10.37681/2181-1652-019-x-2021-1-5.

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A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it

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42

Aggarwal, Rekha, and Deepak Kumar Kaushik. "Structural and Optical Studies on Sol-Gel Driven Spin-Coated CdS Thin Films." Journal of Physics: Conference Series 2267, no. 1 (2022): 012012. http://dx.doi.org/10.1088/1742-6596/2267/1/012012.

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Abstract Inorganic wide band gap semiconductors are considered as best for optoelectronic devices such as photovoltaic cells, photodetectors, thin film transistors etc. CdS is a more promising semiconductor due to its direct wide band-gap ∼ 2.42 eV and size dependent optical properties. In the present article, structural and optical properties of spin coated CdS thin films are investigated. CdS thin films are annealed at 400 °C for 60 minutes to improve crystalline quality. X-RAY diffraction pattern reveals (002) diffraction plane of wurtzite CdS. The optical properties are analyzed by UV-Visi

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43

Kempf, P., M. von Ortenberg, R. Bicknell-Tassius, and A. Waag. "Far-infrared magnetospectroscopy on epitaxial zero-gap and wide-gap semiconductor layer systems." International Journal of Infrared and Millimeter Waves 13, no. 2 (1992): 207–13. http://dx.doi.org/10.1007/bf01010654.

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44

LURYI, SERGE. "IMPREGNATED SEMICONDUCTOR SCINTILLATOR." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 973–82. http://dx.doi.org/10.1142/s0129156408005928.

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A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes will recombine inside the impregnations and produce scintillating radiation to which the wide-gap body is essentially transparent. In this way it is possible to implement a semiconductor scintillator of l

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45

Gunshor, Robert L., and Arto V. Nurmikko. "II-VI Blue-Green Laser Diodes: A Frontier of Materials Research." MRS Bulletin 20, no. 7 (1995): 15–19. http://dx.doi.org/10.1557/s088376940003712x.

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The current interest in the wide bandgap II-VI semiconductor compounds can be traced back to the initial developments in semiconductor optoelectronic device physics that occurred in the early 1960s. The II-VI semiconductors were the object of intense research in both industrial and university laboratories for many years. The motivation for their exploration was the expectation that, possessing direct bandgaps from infrared to ultraviolet, the wide bandgap II-VI compound semiconductors could be the basis for a variety of efficient light-emitting devices spanning the entire range of the visible

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46

Xu, Jixian, Caleb C. Boyd, Zhengshan J. Yu, et al. "Triple-halide wide–band gap perovskites with suppressed phase segregation for efficient tandems." Science 367, no. 6482 (2020): 1097–104. http://dx.doi.org/10.1126/science.aaz5074.

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Wide–band gap metal halide perovskites are promising semiconductors to pair with silicon in tandem solar cells to pursue the goal of achieving power conversion efficiency (PCE) greater than 30% at low cost. However, wide–band gap perovskite solar cells have been fundamentally limited by photoinduced phase segregation and low open-circuit voltage. We report efficient 1.67–electron volt wide–band gap perovskite top cells using triple-halide alloys (chlorine, bromine, iodine) to tailor the band gap and stabilize the semiconductor under illumination. We show a factor of 2 increase in photocarrier

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47

Song, J. G., Lin Hua, Qiang Shen, Fang Wang, and Lian Meng Zhang. "Synthesis and Characterization of SnO₂ Nano-Cystalline for Dye Sensitized Solar Cells." Key Engineering Materials 602-603 (March 2014): 876–79. http://dx.doi.org/10.4028/www.scientific.net/kem.602-603.876.

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The study of dye-sensitized solar cells (DSCs) based on nanocrystalline films of high band gap semiconductors is a progressive field of research that is being carried out by scientists in a wide range of laboratories. Of the many semiconductor materials utilized for conversion of solar energy into electricity, SnO2 is a high band gap semiconductor that has been used extensively. However, its efficiency is at a relatively lower level when compared to other semiconductor materials such as TiO2 working under similar circumstances. To improve the conversion efficiency of the DSCs, the SnO2 nanorot

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48

Ichinose, Hideki, Eriko Takuma, and Hidetaka Sawada. "Atomic and Electronic Structure of Wide Gap Semiconductor Grain Boundaries." Materia Japan 43, no. 12 (2004): 984. http://dx.doi.org/10.2320/materia.43.984.

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49

Hiramatsu, Hidenori, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, and Hideo Hosono. "Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS." Applied Physics Letters 81, no. 4 (2002): 598–600. http://dx.doi.org/10.1063/1.1494853.

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50

Ueda, K., S. Inoue, H. Hosono, N. Sarukura, and M. Hirano. "Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS." Applied Physics Letters 78, no. 16 (2001): 2333–35. http://dx.doi.org/10.1063/1.1364656.

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