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Relevant bibliographies by topics / Widebandgaps

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Academic literature on the topic 'Widebandgaps'

Author: Grafiati

Published: 4 June 2025

Last updated: 1 August 2025

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Journal articles on the topic "Widebandgaps"

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Oriato, D., Alison B. Walker, and W. N. Wang. "Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes." VLSI Design 13, no. 1-4 (2001): 295–99. http://dx.doi.org/10.1155/2001/14941.

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Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode. A self-consistent solution of Poisson and Schrödinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

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Shenai, Krishna. "Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices." IEEE Transactions on Electron Devices 62, no. 2 (2015): 248–57. http://dx.doi.org/10.1109/ted.2014.2360641.

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Mecke, R. "High energy-efficient electrical drive with multilevel inverter and widebandgap power semiconductors." Renewable Energy and Power Quality Journal 19 (September 2021): 91–96. http://dx.doi.org/10.24084/repqj19.223.

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Multilevel inverters are an alternative for electrical drives with DC link voltage between 560 and 750 V. In this voltage range new wide-bandgap power switches (SiC MOSFET, GaN FET) are available. The paper analyses three-, four-, five- and seven-level inverters. A simulation model of the drive system, including the 11 kW induction motor and motor filter is developed. By replacing IGBTs with SiC FETs, the twolevel inverter achieved a loss reduction of 59 % at 25 °C and 150 °C at nominal motor operation point. By using the five-level inverter with GaN FETs, a further loss reduction of 9 % only

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Ghosh, Krishnendu, та Uttam Singisetti. "Theory of High Field Transport in β-Ga2O3". International Journal of High Speed Electronics and Systems 28, № 01n02 (2019): 1940008. http://dx.doi.org/10.1142/s0129156419400081.

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We present a comprehensive review of high-field transport properties in an emerging and trending ultra-widebandgap semiconductor β-Ga2O3. The focus is on the theoretical understanding of the microscopic mechanisms that control the dynamics of farfrom-equilibrium electrons. A manifold of density functional calculations and Boltzmann theory based transport formalism unravels the behavior of the electron distribution under a varied range of external electric fields. The key high-field transport properties that govern electronic device performance, like velocity and ionization co-efficients, are e

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Raghavan, Parthasarathy S., Roman Drachev, Bala Bathey, and Henry Chou. "A Comparative Study of the Crystal Growth Techniques of Silicon Carbide, Technology Adaption and the Road to Low Cost Silicon Carbide Materials." Materials Science Forum 963 (July 2019): 51–55. http://dx.doi.org/10.4028/www.scientific.net/msf.963.51.

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The growing demand for power electronic device for automotive, photovoltaic, transportation, motor drives creates an enormous demand for widebandgap semiconducting materials such as silicon carbide (SiC) and gallium nitride (GaN). While GaN based devices can be used for low voltages, SiC is the workhorse for voltages >600. Progress in the availability of larger diameter SiC wafers has driven the final cost of device assembly down. In this paper we compare different growth techniques for growing high quality SiC crystals, technology adaption and road to low cost SiC materials. GT Advanced Te

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Протасов, Д. Ю., Д. В. Гуляев, А. К. Бакаров, А. И. Торопов, Е. В. Ерофеев та К. С. Журавлев. "Увеличение насыщенной скорости дрейфа электронов в pHEMT-гетероструктурах с донорно-акцепторным легированием". Письма в журнал технической физики 44, № 6 (2018): 77. http://dx.doi.org/10.21883/pjtf.2018.06.45770.17098.

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AbstractField dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination

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Singisetti, Uttam. "(Invited) Advanced Gallium Oxide Electronic Devices." ECS Meeting Abstracts MA2025-01, no. 35 (2025): 1698. https://doi.org/10.1149/ma2025-01351698mtgabs.

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The monoclinic beta-gallium oxide (Ga2O3) (bandgap 4.8 eV) is an emerging ultra-widebandgap semiconductors (UWBGs) that has garnered a lot of interest for power, RF and high speed switching applications. This talk will present the most recent advances in gallium oxide devices from our group. We will present the lateral MOSFETs with improved field plate design and beyond-kV breakdown. We will also present on-wafer individual device level switching characteristics. We will discuss the in-situ Mg doped MOCVD films that can work as efficiently as current blocking layer. The impact of the phonon li

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Singisetti, Uttam. "(Invited) Gallium Oxides Devices for Grid-Scale Power Electronics and High Power Switched Mode RF Amplifiers." ECS Meeting Abstracts MA2023-01, no. 32 (2023): 1835. http://dx.doi.org/10.1149/ma2023-01321835mtgabs.

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Within a decade of the first demonstration of a MESFET device, monoclinic β-Ga2O3 (Ga2O3) devices have made incredible progress in breakdown voltages, power device figure of merit and high-speed performance. It has emerged as a promising ultra-widebandgap semiconductor for next generation power, GHz switching and RF applications. In this talk, we will present an overview of our studies on fundamental transport properties, kilovolt class power MOSFETs and aggressively scaled RF devices. The large bandgap of Ga2O3 leads to a high critical field strength. This high field strength in combination w

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Lopez-Garcia, Alex J., Andreas Bauer, Rubio Robert Fonoll, et al. "UV-Selective Optically Transparent Zn(O,S)-Based Solar Cells." September 8, 2020. https://doi.org/10.1002/solr.202000470.

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This work reports experimental evidence of a photovoltaic effect in transparent UV-selective Zn(O,S)-based heterojunctions. Zn(O,S) has a strong interest for the development of UV-selective solar cells with high transparency in the visible region, required for the development of nonintrusive building-integrated photovoltaic (BIPV) elements as transparent solar windows and glass-based solar façades. By anion alloying, Zn(O,S) mixed crystal absorbers can be fabricated with different sulfur content across the whole compositional range. This allows adjustment of the band

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Yan, Sihan, Zeng Liu, Shan Li та ін. "Layer-number parity-dependent oscillatory spin transport in β -Ga2O3 magnetic tunnel junctions". Applied Physics Letters 124, № 15 (2024). http://dx.doi.org/10.1063/5.0189510.

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Spintronics devices have been a research hotspot due to their rich theoretical and application value. The widebandgap semiconductor β-Ga2O3 has excellent application potential in spintronics due to the controllability of its electron behavior via ultraviolet light. This paper employs first-principles calculations and the Wenzel–Kramers–Brillouin (WKB) approximation to comprehensively investigate spin transport based on magnetic tunnel junctions (MTJs) comprising β-Ga2O3 nanosheets. The magnetic moment of the ferromagnetic layer in β-Ga2O3 MTJs is found to be positively correlated with tunnel m

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Dissertations / Theses on the topic "Widebandgaps"

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Vijayakumar, Arun. "INVESTIGATION OF REACTIVELY SPUTTERED SILICON CARBON BORON NITRIDE (SiCBN) THIN FILMS FOR HIGH TEMPERATURE APPLICATIONS." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2143.

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The increasing demand for efficient energy systems in the last decade has brought about the development of advanced sensor systems that utilize advance detection methods to help in preventive maintenance of these essential systems. These usually are needed in hard to access environments where conditions are extreme and unfit for human interaction. Thin film based sensors deposited directly on the surfaces exposed to harsh environments can serve as ideal means of measuring the temperature of the component during operation. They provide the basic advantage of proximity to the surface and hence a

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Book chapters on the topic "Widebandgaps"

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Reshchikov, Michael A. "Luminescence from point defects in widebandgap, direct-gap semiconductors." In Characterisation and Control of Defects in Semiconductors. Institution of Engineering and Technology, 2019. http://dx.doi.org/10.1049/pbcs045e_ch2.

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"Status of Silicon Carbide (SiC) as a WideBandgap Semiconductor for HighTemperature Applications: A Review." In High-Temperature Electronics. IEEE, 2009. http://dx.doi.org/10.1109/9780470544884.ch69.

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Conference papers on the topic "Widebandgaps"

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Trew, R. J., W. Kuang, Y. Liu, and G. L. Bilbro. "Widebandgap Semiconductor HFET Models for Microwave CAD." In 2008 European Microwave Integrated Circuit Conference (EuMIC). IEEE, 2008. http://dx.doi.org/10.1109/emicc.2008.4772285.

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Boeuf, F., R. Andre, D. Heger, R. Romestain, and Le Si Dang. "Stimulation of Polariton in Widebandgap Semiconductor Microcavities." In 1998 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1998. http://dx.doi.org/10.7567/ssdm.1998.c-7-2.

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