Academic literature on the topic 'Zinc oxide - Defects'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Zinc oxide - Defects.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Zinc oxide - Defects"

1

Ischenko, V., S. Polarz, D. Grote, V. Stavarache, K. Fink, and M. Driess. "Zinc Oxide Nanoparticles with Defects." Advanced Functional Materials 15, no. 12 (December 2005): 1945–54. http://dx.doi.org/10.1002/adfm.200500087.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Drożdż, Monika, Bartek Wierzba, and Zbigniew Grzesik. "Concentration of Point Defects in Metal Deficient Zn1-yO." High Temperature Materials and Processes 37, no. 1 (January 26, 2018): 17–23. http://dx.doi.org/10.1515/htmp-2016-0256.

Full text
Abstract:
AbstractIn this paper the doping effect has been used to indirectly calculate point defect concentration in metal-deficient Zn1-yO zinc oxide. The proposed method consists of determining the concentration of prevailing point defects in the studied oxide from the influence of chromium addition on the point defect situation in doped zinc oxide. It has been found that chromium addition into the crystal lattice of zinc oxide changes its ionic disorder, enabling calculation of predominant point defects in Zn1-yO. The concentration of predominant point defects in Zn1-yO is the following function of oxygen pressure and temperature: $$\eqalign{\left[{\,{{\rm V''}_{\rm Zn}}\,} \right]\, &= \,{1 \over 2}\left[{\,{\rm h^ \bullet}\,} \right]\, = \,0.63 \cdot \,\rm p_{{O_2}}^{1/6}\, \cdot {K^{1/3}}\,_{}^{}\, \cr& = \,\,5.6 \cdot {10^{- 3}} \cdot \,\rm p_{{O_2}}^{1/6}\, \cdot \exp \left({- {{27\,kJ/mol} \over {RT}}} \right)\cdot}$$
APA, Harvard, Vancouver, ISO, and other styles
3

Santos, J. D., E. Longo, E. R. Leite, and J. A. Varela. "Model for zinc oxide varistor." Journal of Materials Research 13, no. 5 (May 1998): 1152–57. http://dx.doi.org/10.1557/jmr.1998.0164.

Full text
Abstract:
Zinc oxide varistors are very complex systems, and the dominant mechanism of voltage barrier formation in these systems has not been well established. Yet the MNDO quantum mechanical theoretical calculation was used in this work to determine the most probable defect type at the surface of a ZnO cluster. The proposed model represents well the semiconducting nature as well as the defects at the ZnO bulk and surface. The model also shows that the main adsorption species that provide stability at the ZnO surface are O-, O2-, and O2.
APA, Harvard, Vancouver, ISO, and other styles
4

WANG, YANG, CHENGBIAO WANG, ZHIJIAN PENG, QI WANG, and XIULI FU. "MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING." Surface Review and Letters 24, Supp01 (October 31, 2017): 1850006. http://dx.doi.org/10.1142/s0218625x18500063.

Full text
Abstract:
Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.
APA, Harvard, Vancouver, ISO, and other styles
5

Sengupta, G., N. K. Mandal, M. L. Kundu, R. M. Sanyal, and S. Dutta. "Morphology and surface defects of zinc oxide." Journal of Colloid and Interface Science 117, no. 2 (June 1987): 301–9. http://dx.doi.org/10.1016/0021-9797(87)90388-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Mikhailov, M. M. "Photoannealing of defects in irradiated zinc oxide." Soviet Physics Journal 28, no. 9 (September 1985): 693–97. http://dx.doi.org/10.1007/bf00895515.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Liu, M., A. H. Kitai, and P. Mascher. "Point defects and luminescence centres in zinc oxide and zinc oxide doped with manganese." Journal of Luminescence 54, no. 1 (August 1992): 35–42. http://dx.doi.org/10.1016/0022-2313(92)90047-d.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Laxman, Karthik, Tanujjal Bora, Salim H. Al-Harthi, and Joydeep Dutta. "Improved Sensitization of Zinc Oxide Nanorods by Cadmium Telluride Quantum Dots through Charge Induced Hydrophilic Surface Generation." Journal of Nanomaterials 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/919163.

Full text
Abstract:
This paper reports on UV-mediated enhancement in the sensitization of semiconductor quantum dots (QDs) on zinc oxide (ZnO) nanorods, improving the charge transfer efficiency across the QD-ZnO interface. The improvement was primarily due to the reduction in the interfacial resistance achieved via the incorporation of UV light induced surface defects on zinc oxide nanorods. The photoinduced defects were characterized by XPS, FTIR, and water contact angle measurements, which demonstrated an increase in the surface defects (oxygen vacancies) in the ZnO crystal, leading to an increase in the active sites available for the QD attachment. As a proof of concept, a model cadmium telluride (CdTe) QD solar cell was fabricated using the defect engineered ZnO photoelectrodes, which showed ∼10% increase in photovoltage and ∼66% improvement in the photocurrent compared to the defect-free photoelectrodes. The improvement in the photocurrent was mainly attributed to the enhancement in the charge transfer efficiency across the defect rich QD-ZnO interface, which was indicated by the higher quenching of the CdTe QD photoluminescence upon sensitization.
APA, Harvard, Vancouver, ISO, and other styles
9

Nikolić, Marija, Jelena Popović, Jovanka Gašić, and Radomir Barac. "The effect of zinc oxide based sealer on bone defects healing." Stomatoloski glasnik Srbije 63, no. 4 (December 1, 2016): 159–66. http://dx.doi.org/10.1515/sdj-2016-0016.

Full text
Abstract:
Summary Introduction Obturation as the final phase of endodontic treatment aims to provide complete hermetic filling along the entire length of the canal system from the coronal opening to the apical end. The aim of this study was to evaluate histological response of bone tissue on the implantaton of zinc oxide based material in artificially prepared defect in the mandible of rats. Material and method For the experiment, sixteen male Wistar rats were used. Using sterile steel burs a defect was made in mandible, between the midline and mental foramen. Zinc oxide based sealer was implanted in the defects of experimental group while the defects of control group healed spontaneously. One half of animals in both groups were sacrificed after thirty days, and the second half after ninety days. Microscopic preparations consisted of the defect with surrounding bone and after processing were analysed using light microscopy. Results The thirtieth day after implantation of the material, fibrovascular connective tissue was noted, with scant chronic inflammatory cell infiltrate. Away from the experimentally made defect, in the depth of the bone, lamellar bone with well-formed larger osteons was noted as well as enlarged Volkmann and Haversian canals. Ninety days after implantation of the material, there was no restitutio ad integrum, but intense focal remodelling of bone tissue was noted. Conclusion Endomethasone N slowed down bone tissue healing process by showing the signs of prolonged inflammation in bone tissue in which it has been implanted. Extension of the healing process is reflected in the slow replacement of fibrovascular connective tissue with newly formed bone tissue.
APA, Harvard, Vancouver, ISO, and other styles
10

Mikhailov, M. M. "Thermal annealing of defects in irradiated zinc oxide." Soviet Physics Journal 28, no. 9 (September 1985): 742–45. http://dx.doi.org/10.1007/bf00895527.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Zinc oxide - Defects"

1

Chen, Thomas D. (Thomas Duhwa). "Electrically active defects in zinc oxide." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/10997.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Adhikari, Naresh. "Defects and Optoelectronic properties of Zinc oxide." Bowling Green State University / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1562770832047501.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Jokela, Slade Joseph. "Stability and structure of hydrogen defects in zinc oxide." Online access for everyone, 2006. http://www.dissertations.wsu.edu/Dissertations/Fall2006/s_jokela_122106.pdf.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Thapa, Sunil. "Defects and Ferromagnetism in Transition Metal Doped Zinc Oxide." Bowling Green State University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1467319340.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Wang, Zilan, and 王子蘭. "Defect emission of ZnO and its related origins." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/211111.

Full text
Abstract:
Zinc oxide (ZnO) is a promising material for ultra-violet optoelectronics applications due to its direct band gap and large exciton binding energy. Defect in semiconductor plays an important role in determining the optical and electrical properties. It is thus crucial to understand the defects‟ performance for realizing the device fabrication. Green luminescence (GL) having the peak at 2.4-2.5 eV is a defect related emission band commonly found in the luminescence spectra of many of the ZnO materials. Despite of the effort devoted for several decades, its origin and emission mechanism remain controversial. In this thesis, the origin of the GL emitted from the ZnO films grown by pulsed laser deposition (PLD) is studied using a comprehensive spectroscopic approach, including the Hall effect measurement, photoluminescence (PL), Raman spectroscopy, positron annihilation spectroscopy (PAS), and secondary ion mass spectroscopy (SIMS). ZnO thin films are grown by PLD method with the growth parameters (namely the substrate temperature and oxygen pressure during the growth) systemically varied. Annealing studies in argon atmosphere reveal the correlation between the free electron concentration and the hydrogen concentration in the samples. Two oxygen deficient defect related Raman modes are also identified and they anneal out after annealing at high temperature. We have investigated the introduction the GL systematically grown by different growth parameters, undergone different post-growth annealing treatment, and different methods of growth. Two kinds of GL’s are identified. The first kind of GLs has peak at 2.47 eV without the fine structure, and the other has the peak at 2.45 eV having the fine structure of separation of 0.07 eV. The GL with the fine structure is originated from the surficial region of the ZnO film. The GL without the fine structure is introduced after the annealing 900℃ irrespective of the initial growth conditions. PAS results show a strong correlation between the thermal introductions of a kind of Zn-vacancy and the GL without the fine structure. Moreover, a donor-acceptor-pair (DAP) emission is induced in the low temperature PL spectrum after the same annealing temperature of 900℃. The GL and the DAP emissions are thus associated with the involvement of the VZn. Furthermore by comparing the photon energies of the GL and DAP with the previous first principle calculated results, the GL is ascribed to the conduction band to the (-/2-) acceptor level of VZn, and the DAP involves the (0/-) acceptor level of VZn The presence of the conduction band to the (0/-) level transition is compatible with the results of the photoluminescence excitation (PLE) study.
published_or_final_version
Physics
Doctoral
Doctor of Philosophy
APA, Harvard, Vancouver, ISO, and other styles
6

Spina, Carla. "Zinc oxide semiconducting nanocrystals : scaffolds for intrinsic and extrinsic defects." Thesis, McGill University, 2009. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=115869.

Full text
Abstract:
As a material whose applications are many and growing, zinc oxide still remains a complex system whose photoluminescent (PL), structural, electrical, and photocatalytic properties have not been fundamentally understood. The luminescent properties of zinc oxide (ZnO) nanocrystals (NCs) are very sensitive to crystal structure, and defect states in zinc oxide, which in turn is very sensitive to preparation methods, post-synthesis workup, and thermal treatments. Understanding and managing this rich defect chemistry is critical to controlling ZnO properties. As the surface-to-volume ratio of ZnO increases as materials enter the quantum regime, the surface defects play a stronger role. The exact role of the defect states and their contribution to the physical and chemical properties of ZnO has been studies in great lengths yet still remains controversial.
APA, Harvard, Vancouver, ISO, and other styles
7

Dai, Xuemin, and 戴學敏. "Experimental and theoretical studies of defects related emissions in ZnO crystals." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B4163388X.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Dai, Xuemin. "Experimental and theoretical studies of defects related emissions in ZnO crystals." Click to view the E-thesis via HKUTO, 2009. http://sunzi.lib.hku.hk/hkuto/record/B4163388X.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Sun, Wei. "Defect Behaviors in Zinc Oxide and Zinc Titanates Ceramics from First Principles Computer Simulations." Thesis, University of North Texas, 2016. https://digital.library.unt.edu/ark:/67531/metadc955093/.

Full text
Abstract:
ZnO and ZnO-TiO2 ceramics have intriguing electronic and mechanical properties and find applications in many fields. Many of these properties and applications rely on the understanding of defects and defect processes in these oxides as these defects control the electronic, catalytic and mechanical behaviors. The goal of this dissertation is to systematically study the defects and defects behaviors in Wurtzite ZnO and Ilmenite ZnTiO3 by using first principles calculations and classical simulations employing empirical potentials. Firstly, the behavior of intrinsic and extrinsic point defects in ZnO and ZnTiO3 ceramics were investigated. Secondly, the effect of different surface absorbents and surface defects on the workfunction of ZnO were studied using DFT calculations. The results show that increasing the surface coverage of hydrocarbons decreased the workfunction. Lastly, the stacking fault behaviors on ilmenite ZnTiO3 were investigated by calculating the Generalized Stacking Fault (GSF) energies using density functional theory based first principles calculations and classical calculations employing effective partial charge inter-atomic potentials. The gamma-surfaces of two low energy surfaces, (110) and (104), of ZnTiO3 were fully mapped and, together with other analysis such as ideal shear stress calculations.
APA, Harvard, Vancouver, ISO, and other styles
10

蘇振強 and Chun-keung So. "Defect study of zinc oxide bulk materials by positron lifetime spectroscopy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2008. http://hub.hku.hk/bib/B39558691.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Zinc oxide - Defects"

1

Andriotis, A. N., R. M. Sheetz, E. Richter, and M. Menon. Structural, electronic, magnetic, and transport properties of carbon-fullerene-based polymers. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.21.

Full text
Abstract:
This article discusses the structural, electronic, magnetic, and transport properties of carbon-fullerene-based polymers. In particular, it examines the defect-induced ferromagnetism of the C60-based polymers and its analog in the case of non-traditional inorganic materials. It first reviews the computational methods currently used in the literature, highlighting the pros and cons of each one of them. It then considers the defects associated with the ferromagnetism of the C60-based polymers, namely carbon vacancies, the 2 + 2 cycloaddition bonds and impurity atoms, and their effect on the electronic structure. It also evaluates the effect of codoping and goes on to describe the electronic, magnetic and transport properties of the rhombohedral C60-polymer. Finally, it looks at the origin of magnetic coupling among the magnetic moments in the rhombohedral C60-polymer and provides further evidence for the analogy between the magnetism of the rhombohedral C60-polymer and zinc oxide.
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Zinc oxide - Defects"

1

Janotti, Anderson, and Chris G. Van de Walle. "Native Point Defects and Doping in ZnO." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 113–34. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Meyer, B. K., D. M. Hofmann, J. Stehr, and A. Hoffmann. "Spectral Identification of Impurities and Native Defects in ZnO." In Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, 135–70. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9781119991038.ch6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Zhao, Jian Ling, Xiao Min Li, Ji Ming Bian, Wei Dong Yu, and C. Y. Zhang. "Zinc Oxide Thin Films with Reduced Native Compensative Defects Grown by Ultrasonic Spray Pyrolysis at Atmosphere." In Key Engineering Materials, 589–92. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.589.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Kushwaha, Ajay, and M. Aslam. "Zinc Oxide Nanowire Films: Solution Growth, Defect States and Electrical Conductivity." In Advanced Materials for Agriculture, Food, and Environmental Safety, 453–91. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118773857.ch16.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Stokłosa, Andrzej, and Stefan S. Kurek. "Magnetite Doped with Zinc and Manganese – (Zn, Mn, Fe)3±δO4." In Structure and Concentration of Point Defects in Selected Spinels and Simple Oxides, 151–71. First edition. | Boca Raton : CRC Press, 2021.: CRC Press, 2021. http://dx.doi.org/10.1201/9781003106166-11.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Look, David C. "Doping and Defects in ZnO." In Zinc Oxide Bulk, Thin Films and Nanostructures, 21–42. Elsevier, 2006. http://dx.doi.org/10.1016/b978-008044722-3/50002-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

"- ZnO Nanostructures and Thin Films Grown in Aqueous Solution: Growth, Defects, and Doping." In Handbook of Zinc Oxide and Related Materials, 124–57. CRC Press, 2012. http://dx.doi.org/10.1201/b13068-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Chua, S. J., C. B. Tay, and J. Tang. "ZnO Nanostructures and Thin Films Grown in Aqueous Solution: Growth, Defects, and Doping." In Handbook of Zinc Oxide and Related Materials, 107–39. CRC Press, 2012. http://dx.doi.org/10.1201/b13072-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Karim, ANM, S. Begum, and MSJ Hashmi. "Processing of zinc oxide varistors: sources of defects and possible measures for their elimination." In Advanced Methods in Materials Processing Defects, 143–53. Elsevier, 1997. http://dx.doi.org/10.1016/s0922-5382(97)80016-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Bunker, Bruce C., and William H. Casey. "Oxide Films in Metal Corrosion: Oxide Defect Chemistry." In The Aqueous Chemistry of Oxides. Oxford University Press, 2016. http://dx.doi.org/10.1093/oso/9780199384259.003.0019.

Full text
Abstract:
Most metals used by our society corrode, from the mild tarnish on silver to the green patina that coats our copper statues and electrical wiring to the red rust on our cars and iron bridges (Fig. 12.1, Plate 17). Metal corrosion often involves the conversion of metals into either oxides or their soluble hydrolysis products. The metals we use in our structures, as well as in electronic and magnetic devices, are destroyed as a result of this conversion. It has been estimated that the annual cost of metallic corrosion to the U.S. economy is hundreds of billions of dollars (5% of the gross national product). Therefore, enormous efforts have been made to understand why metals corrode, and what can be done to inhibit corrosion processes. Stainless steel is just one example of humankind’s attempts to limit corrosion processes. Other examples include the use of inert paints on ships to prevent saline corrosion, coating iron with zinc to galvanize it, and exploiting electrochemical strategies, such as using sacrificial anodes that corrode instead of iron, as a means of protecting more important materials’ components. The number of comprehensive texts and reviews regarding metal corrosion scales with its economic impact, with more than 1000 articles being published on the topic per year. Those of you interested in more comprehensive discussions regarding how specific metals corrode in specific environments such as seawater and acid rain should see other works. Our focus in this chapter is to highlight how metal corrosion is mediated by the presence of oxides, with an emphasis on reactions that occur in water. This overview highlights the basic properties of oxide films that give rise to a wide range of complicated metal corrosion phenomena. The discussion draws on many concepts highlighted in other chapters of this book: surface chemistry (Chapter 6), electrochemistry (Chapter 11), and oxide dissolution (Chapter 16). Metal corrosion often involves electrochemical reactions in which the metal is oxidized by either water or O2.
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Zinc oxide - Defects"

1

Sahai, Anshuman, and Navendu Goswami. "Structural and optical investigations of oxygen defects in zinc oxide nanoparticles." In NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4917664.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Zhang, Martin Y., Qiong Nian, and Gary J. Cheng. "Deposition of Al-Doped Zinc Oxide by Direct Pulsed Laser Recrystallization at Room Temperature on Various Substrates for Solar Cell Applications." In ASME 2012 International Manufacturing Science and Engineering Conference collocated with the 40th North American Manufacturing Research Conference and in participation with the International Conference on Tribology Materials and Processing. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/msec2012-7381.

Full text
Abstract:
In this study, a method combining room temperature pulsed laser deposition (PLD) and direct pulsed laser recrystallization (DPLR) are introduced to deposit superior transparent conductive oxide (TCO) layer on low melting point flexible substrates. As an indispensable component of thin film solar cell, TCO layer with a higher quality will improve the overall performance of solar cells. Alumina-doped zinc oxide (AZO), as one of the most promising TCO candidates, has now been widely used in solar cells. However, to achieve optimal electrical and optical properties of AZO on low melting point flexible substrate is challenging. Recently developed direct pulsed laser recrystallization (DPLR) technique is a scalable, economic and fast process for point defects elimination and recrystallization at room temperature. It features selective processing by only heating up the TCO thin film and preserve the underlying substrate at low temperature. In this study, 250 nm AZO thin film is pre-deposited by pulsed laser deposition (PLD) on flexible and rigid substrates. Then DPLR is introduced to achieve a uniform TCO layer on low melting point flexible substrates, i.e. commercialized Kapton polyimide film and micron-thick Al-foil. Both finite element analysis (FEA) simulation and designed experiments are carried out to demonstrate that DPLR is promising in manufacturing high quality AZO layers without any damage to the underlying flexible substrates. Under appropriate experiment conditions, such as 248 nm in laser wavelength, 25 ns in laser pulse duration, 15 laser pulses at laser fluence of 25 mJ/cm2, desired temperature would result in the AZO thin film and activate the grain growth and recrystallization. Besides laser conditions, the thermal conductivity and crystallinity of the substrate serve as additional factors in the DPLR process. It is found that the substrate’s thermal conductivity correlates positively with the AZO crystal size; the substrate’s crystallinity correlates positively with the AZO film’s crystallinity. The thermal expansion of substrate would also contribute to the film tensile stress after processed by DPLR technique. The overall results indicate that DPLR technique is useful and scalable for flexible solar cell manufacturing.
APA, Harvard, Vancouver, ISO, and other styles
3

Rakhesh, V., and Balakrishnan Shankar. "Intrinsic defect oriented visible region absorption in zinc oxide films." In 2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2017). Author(s), 2018. http://dx.doi.org/10.1063/1.5033016.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Jo, Jungyol, Ogweon Seo, Hyoshik Choi, and Byeonggon Lee. "Defect Passivation by Hydrogen in Zinc Oxide Films Grown by MOCVD." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.f-2-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Sharma, Vikas, Parmod Kumar, Geeta Rana, Rishi Vyas, K. Sachdev, Hitendra K. Malik, and K. Asokan. "Enhanced UV and suppressed defect related emission in yttrium doped zinc oxide." In SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4873006.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Singh, Kamaljit, Sudhanshu Sharma, and J. P. Sharma. "Antifriction Bearing Sleeves for Diagnostics and Energy Harvesting." In STLE/ASME 2010 International Joint Tribology Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ijtc2010-41152.

Full text
Abstract:
Roller ball bearings are the most common and one of the most important components in rotating machinery. Bearings, in general produce vibrations which can be harvested to produce energy and analysis of these vibrations can also be used to determine the condition of ball bearing. In this paper we discuss how to use the bearings for energy harvesting and conditioning monitoring in machines. A sleeve, padded with piezoelectric material, is designed to solve the dual purpose. Piezo electric materials have the ability to generate an electric field or electric potential in response to applied mechanical strain. Tests are conducted on the good and defective bearings to study the effectiveness of the sleeve. Phase fluctuation based processors are found to be effective in ball bearing condition monitoring. For condition monitoring the signature responses for a given time period are studied. At a constant speed of increase in load leads to an increase in voltage generated. For a single non-coated piezo film, voltage varies from 383 mV at 80 lbf to 683 mV at 320 lbf at 40Hz. With the increased stacking of non-coated piezo films at 320 lbf, voltage generated shows an increase of 23 %. Nano-coating mixture (Ferrofluid and Zinc oxide nanoparticles) causes an additional piezoelectric effect on the surface of piezo film as ZnO acts as an additional source of electrons, due to its ability to emit charges at room temperature. The single piezo film configuration at 320 lbf generates a voltage of 663 mV while the voltage increases 2.1 times for a single nano-coated piezo film. Introduction of defects causes increases in the contact stress at the asperities leading to an increase in the vibrations and forces. Also, an increase in vibration and force, leads to an increase in the voltage generated. For a single piezo film configuration, in a normal bearing, the voltage generated is 663 mV while a defective bearing gives a voltage of 698 mV.
APA, Harvard, Vancouver, ISO, and other styles
7

Awitan, Fritz Christian, Camille Joyce Garcia, Dirk Andrew Doyle, and Lawrence Benedict. "A Study on a Low Cost Thin Film Antireflection Coating Solution for Failure Analysis Applications." In ISTFA 2016. ASM International, 2016. http://dx.doi.org/10.31399/asm.cp.istfa2016p0045.

Full text
Abstract:
Abstract An ARC solution that can be used to improve backside imaging for backside photoemission microscopy applications is presented in this paper. Zinc Oxide (ZnO) -based thin films used as ARCs are deposited at the backside of the failing units through a simple and low cost spray pyrolysis technique. An improvised set-up, composed of an atomizer and a hot plate, is used in the experiment. The paper provides evidence of acceptable process repeatability and demonstrates that the technique and the material have important applications in the field of failure analysis. Furthermore, it shows that the application of ARC resulted in better defect localization. The location of the defect is easily been determined upon doing frontside inspection - to - backside image comparison on the deposited unit. By using high kV ion beam passive voltage contrast (PVC) and angled cut focused ion beam (FIB) cross section, we are able to isolate further and show the nature of the defect at the failing block.
APA, Harvard, Vancouver, ISO, and other styles
8

Kunj, Saurabh, and K. Sreenivas. "Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering." In DAE SOLID STATE PHYSICS SYMPOSIUM 2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4947926.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Khoo, W. H., and S. M. Sultan. "A study of 3-D Zinc Oxide nanowire field effect transistor with defect and interface charge density." In 2015 IEEE Student Conference on Research and Development (SCOReD). IEEE, 2015. http://dx.doi.org/10.1109/scored.2015.7449373.

Full text
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography